281results about How to "Improve light absorption" patented technology

The invention relates to an intelligent plant supplementary lighting method. The method comprises the following steps: setting a red light threshold and a blue light threshold according to the demand of a plant on red light and blue light in each growth stage; detecting the intensities of the red light and the blue light in the growing environment of the plant; comparing the intensities with the corresponding red light threshold and blue light threshold to judge whether supplementary lighting is required and determine the accurate volume of the supplementary lighting; if the supplementary lighting is required, calculating the input current of a corresponding supplementary lighting set according to the volume of the supplementary lighting, so as to accurately control the intensity of the supplementary lighting set and realize intelligent and accurate supplementary lighting on demand, and if the supplementary lighting is not required, turning off the supplementary lighting set. The invention also provides a device realizing the method. By utilizing the supplementary lighting method and device in the invention, quantitative demand supplementary lighting by wavelength can be carried out on the plant according to the characteristics in different growth stage of the plant.

The invention discloses a method for preparing a TiO2 / g-C3N4 composite visible light catalyst. The method comprises the following steps: firstly, uniformly dispersing a titanium source and a nitrogen source in ethanol, and subsequently dropping water into ethanol so as to obtain a mixed material; evaporating to dry the mixed material in a stirring state so as to obtain a precursor; transferring the prepared precursor to a muffle furnace, and calcining for 0.5-12 hours at 300-800 DEG C in the muffle furnace, thereby obtaining the TiO2 / g-C3N4 composite visible light catalyst. The TiO2 / g-C3N4 composite visible light catalyst can be prepared while TiO2 and g-C3N4 are prepared, and the synthesis of the two compounds TiO2 and g-C3N4 and the preparation of the composite visible light catalyst are achieved at one step; the process is simple, and industrialization production is easy to achieve. The composite visible light catalyst disclosed by the invention is rich in photocatalytic activity center, relatively high in both light absorption rate and photocatalytic activity, and relatively high in photocatalytic degradation rate of organisms.

The present invention relates to a touch panel comprising a structure body comprising: a substrate; a conducting pattern that is provided on at least one surface of the substrate; and a light absorption pattern provided on at least one surface of the conducting pattern and provided on at least a portion of regions corresponding to the conducting pattern, and a method for manufacturing the same.

The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein for instance wherein the luminescent nano particles comprise CdSe, wherein the luminescent nano particles comprise a coating of CdS and wherein the matrix comprises a coating comprising ZnS. The luminescent material according may have a quantum efficiency of at least 80% at 25° C., and having a quench of quantum efficiency of at maximum 20% at 100° C. compared to the quantum efficiency at 25° C.

The invention discloses a back-illuminated Si-PIN photoelectric detector taking a black silicon material as a photosensitive layer and a manufacturing method thereof, belonging to the technical field of photoelectric detection. The photoelectric detector comprises a silicon intrinsic substrate, a P-type area located in the centre of the front surface of the silicon intrinsic substrate, an annularP+ area located around the front surface of the silicon intrinsic substrate, an N-type black silicon layer located on the back surface of the silicon intrinsic substrate, upper electrodes located on the upper surface of the P-type area and the P+ area, and lower electrodes located on the two sides of the lower surface of the N-type black silicon layer. According to the invention, the black silicon material is used as the photosensitive layer, and an annular P+ area 3 is increased around the P-type area 2 so that the back-illuminated Si-PIN photoelectric detector disclosed by the invention canabsorb light waves of near-infrared band and has higher light absorptivity and wider response band than a traditional Si photoelectric detector; the manufacturing process is relatively simple and hasthe characteristics of low cost, fast response speed, high responsiveness and wide response band, is easy to realize integration, and has obvious advantages in large-scale marketization.

The invention discloses metal graphene of a composite structure and a preparing method thereof. The metal graphene is composed of nano-porous gold of double-connection split-phase structure and a graphene film. The graphene film covers the nano-porous gold. The nano-porous gold structure can greatly enhance a surface electric field, so that interaction efficiency of the electric field and the graphene is improved, the composite structure can effectively improve light absorptivity of the graphene in a visible waveband, and therefore the metal graphene is widely applied to the field of photoelectric detectors based on graphene.

A method for forming a solar cell having a plasmonic back reflector is disclosed. The method includes the formation of a nanoimprinted surface on which a metal electrode is conformally disposed. The surface structure of the nanoimprinted surface gives rise to a two-dimensional pattern of nanometer-scale features in the metal electrode enabling these features to collectively form the plasmonic back reflector.

The invention discloses a silicon-avalanche photodetector (Si-APD) with black silicon as a photosensitive layer and a preparation method of the Si-APD with the black silicon as the photosensitive layer, and belongs to the field of photoelectric detection technology. The Si-APD comprises a silicon intrinsic substrate 1, an N<+> region 2, a P type region 3, an annular N type region 4, an N<+> region black silicon layer 5, a P<+> region 6, an upper electrode 7 and a lower electrode 8, wherein the N<+> region 2 is located in the middle of the upper surface of the silicon intrinsic substrate 1, the P type region 3 is located below the N<+> region, the annular N type region 4 is located on the periphery of the upper surface of the silicon intrinsic substrate, the N<+> region black silicon layer 5 is located on the upper surface of the N<+> region, the P<+> region 6 is located on the lower surface of the silicon intrinsic substrate, the upper electrode 7 is located on the upper surfaces of the N<+> region black silicon layer and the annular N type region, and the lower electrode 8 is located on the lower surface of the P<+> region. According to the Si-PAD, the black silicon material serves as the photosensitive layer, and meanwhile the annular N type region is additionally arranged on the peripheries of the N<+> region and the P type region. Thus, the Si-APD with the black silicon as the photosensitive layer can absorb light waves of a near-infrared band and have higher light absorptivity and a wider response wave band, the preparation technique is simple, the cost is low, and the Si-PAD has the advantages of being easy to integrate, quick in response speed, high in responsivity and wide in response wave band.

The invention provides a flexible thin-film solar photoelectric cell and a large-scale continuous automatic production method thereof. The solar photoelectric cell comprises an antireflection layer, a transparent upper electrode layer, an isolating layer, a window layer, a protective layer, an absorbing layer, a reflecting layer, a metal back electrode layer, an insulating layer, a substrate layer and a solder flux layer in sequence. The material of the antireflection layer is magnesium fluoride, the material of the transparent upper electrode layer is aluminum zinc oxide, the material of the isolating layer is intrinsic zinc oxide, the material of the window layer is zinc sulfide, the material of the protective layer is sulfur or zinc, the material of the absorbing layer is CIGS (copper indium gallium diselenide) or CIAS (copper indium aluminum diselenide), the material of the reflecting layer is aluminum, the material of the metal back electrode layer is copper-molybdenum-sodium alloy, the material of the insulating layer is titanium oxide, and the material of the substrate layer is stainless steel, copper, aluminum foil or polyimide film. The production method of the flexible thin-film solar photoelectric cell comprises sputtering layer by layer in a closed environment on a continuous automatic production line through a plurality of sputtering methods to form a multilayer structure. The large-scale continuous automatic production method provided by the invention has the advantages of high efficiency, high quality, and low cost.

The invention discloses a thermoelectric generator capable of effectively absorbing solar energy. A semiconductor thermoelectric power generation sheet assembly comprises an upper insulation heat-conduction plate I, a semiconductor thermoelectric device and a lower insulation heat-conduction plate II; the three are sequentially arranged from top to bottom; a carbon nano-particle film is attached to the upper surface of the upper insulation heat-conduction plate I; a cooling system is attached to the lower surface of the lower insulation heat-conduction plate II; and an insulation layer is arranged around the semiconductor thermoelectric power generation sheet assembly. The device is simple in structure and small in volume; when the sun as a heat source irradiates the carbon nano-particle film, due to the rough micro-surface and carbon nano-particles of different particle diameters, sunlight is nearly absorbed by the carbon nano-particle film completely; a radiator rapidly dissipates heat on the lower surface of the semiconductor thermoelectric power generation sheet assembly, so that a cold end is formed; after the cold and hot ends of the semiconductor thermoelectric power generation sheet based on the seebeck effect form a temperature difference, thermoelectromotive force is generated; electric energy is stably output; furthermore, the investment cost is low; the service lifeis long; and electricity generation is steady.

The invention provides a composite material device. The device comprises a base body which is provided with a plurality of holes. A plurality of metal particles are attached to the inner walls of the holes. The particle diameters of the metal particles are 1-200 nanometers. The multiple metal particles have at least x different particle diameters d, and the x is greater than or equal to two. The composite material device has the high light absorption rate and the large light absorption bandwidth.

When a wavelength of a first laser beam with which a first recording medium including a first recording layer is recorded and reproduced is indicated as λ1 (nm), a wavelength of a second laser beam with which a second recording medium including a second recording layer is recorded and reproduced as λ2 (nm), the relationship between the wavelength λ1 and the wavelength λ2 is set to be expressed by 10≦|λ1−λ2|≦120. The first recording layer has a light absorptance ratio of at least 1.0 with respect to the wavelength λ1. The light transmittance of the first recording medium with respect to the wavelength λ2 is set to be at least 30 in both the cases where the recording layer is in a crystal state and in an amorphous state. In order to record and reproduce the optical multilayer disk with the above-mentioned characteristics, a multiwavelength light source with the following configuration is used. Wavelengths of fundamental waves with different wavelengths from injection parts formed at one end of a plurality of optical waveguides, which satisfy phase matching conditions different from one another and are formed in the vicinity of the surface of a substrate, are converted simultaneously, and the first and second laser beams are emitted from emission parts formed at substantially the same position at the other end of the optical waveguides. This enables an optimum optical system for high density recording and reproduction to be obtained.

The invention relates to a solar battery assembly of a copper-indium-gallium-selenium thin film, which comprises a substrate, a back electrode layer, a light absorption layer, a buffer layer, a window layer, a transparent electrode layer and a metal grid electrode layer which are overlapped in sequence, wherein a forbidden bandwidth of the light absorption layer is distributed in a trapezoid shape which is flat at the middle part and gradually-heightened at both sides in a thickness direction. With the adoption of the trapezoid structure of the forbidden band, sunlight can be absorbed within a wider spectral region to ensure the sunlight to be sufficiently absorbed by the light absorption layer, so that the light absorption rate can be improved; and meanwhile, a potential difference whichis changed to both sides of the light absorption layer is generated through the trapezoid structure of the forbidden band, and therefore the solar battery assembly of the copper-indium-gallium-selenium thin film has the advantages of higher light absorption rate and good electric properties by ensuring a short-circuit current and effectively improving an open-circuit voltage. In addition, the invention provides two preparation methods of the light absorption layer of the copper-indium-gallium-selenium thin film solar battery assembly.

The invention discloses a processing method of silicon surface. The method makes roughening treatment on the surface of silicon with new compound liquid to lower the surface reflection rate and remove the cutting damage layer formed when the silicon is cut from silicon ingot, thus greatly improving the conversion efficiency of silicon solar energy battery and effectively solving problems of uneven corrosion, poor repetition, and environmental pollution in the current roughening treatment on the surface of silicon. In addition, the invention also has the advantages of simple technique and low cost.

This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D90 value of 60 nm or less in a particle size distribution. This method for producing an indium tin oxide powder includes, in series: a step (A) of coprecipitating an indium tin hydroxide by using a tin (Sn2+) compound under conditions where a pH is in a range of 4.0 to 9.3 and a liquid temperature is in a range of 5° C. or higher, wherein the indium tin hydroxide has a color tone ranging from bright yellow to color of persimmon in a dried powder state; a step (B) of drying and calcining the indium tin hydroxide, and thereby, obtaining indium tin oxide; and a step (C) of dry pulverizing the obtained indium tin oxide in a nitrogen atmosphere.

Systems and methods for plasmonic heating by combined use of thin plasmonic film-based 2D and 3D structures and a light-emitting diode (LED) for nucleic acids amplification through fast thermal cycling of polymerase chain reaction (PCR) are described.

The invention discloses a hydrogel evaporation film, a preparation method and applications thereof. The hydrogel evaporation film comprises a hydrogel film matrix and carbon light absorption materials, wherein the carbon light absorption materials are uniformly distributed in the hydrogel film matrix, the light-absorbing carbon particles are uniformly dispersed in the hydrogel, and have a light absorptivity of more than 90% in the range from visible light to infrared light, the hydrogel has naturally formed multi-stage micro-nano holes, water is wrapped in the hydrogel to form pore channels communicated with one another, and the water can be conveyed from the bottom of the film to the evaporation side receiving sunlight.

The invention discloses a preparation method of an aluminum alloy surface composite coating layer, and belongs to the laser processing technical field. An NiCrAl / TiC nano coating layer is prepared on the surface of an aluminum alloy through melting covering by using a CO2 high-power laser device; a nano powder has small particle size and large specific surface area, and surface atoms are in an unstable state, so that a melting point is relatively low, the absorption rate on CO2 laser is relatively large, the laser energy density required in the melting covering process is also relatively small, and thus the dilution rate of the coating layer on a substrate can be guaranteed to be relatively small. The interior of the melting-covered layer prepared by the method is free of cracks, pores and other defects; and the prepared laser melting-covered coating layer is suitable for the remanufacturing technical fields such as surface modification and repairing of aluminum alloy engines and other structural parts, can greatly improve the usability of the aluminum alloy structural parts, prolongs the service life, and achieves great economic benefits.

The invention discloses a method for preparing a large-area polycrystalline film, which comprises the following steps of: (1) depositing a layer of amorphous silicon film on a glass substrate; (2) exposing a strip window on the amorphous silicon film by adopting a photo-etching process; (3) sputtering a layer of metal on the amorphous silicon film in the window by adopting a magnetron sputtering method; (4) irradiating the window by adopting a laser device to prepare the polycrystalline film; and (5) removing the residual nickel metal by using acid. The invention provides the new method for preparing the polycrystalline film by combining a conventional metal-induced solid phase crystallization method and a laser crystallization technique; the prepared polycrystalline film has the effects on preferred orientation of the metal-induced solid phase crystallization method and high mobility and few defects of the laser crystallization method; and meanwhile, the method can prepare the large-area polycrystalline film by combining the photo-etching technology and the metal-induced transverse crystallization property, and provides convenience for industrialization.

The invention discloses a process for preparing a high-light-absorption-rate black ceramic film layer through micro-arc oxidation of the surface of a magnesium alloy. In an electrolyte solution with silicate or phosphate as a main salt, the magnesium alloy is subjected to micro-arc oxidation treatment by an alternating-current bipolar pulse power source. The electrolyte solution for preparing the high-light-absorption-rate black ceramic film layer through micro-arc oxidation of the surface of the magnesium alloy is simple in composition and easy to operate, and has less pollution to the environment; the prepared black ceramic film layer not only has the performance of good corrosion resistance and high light absorption rate, but also has good apparent decoration, and can satisfy practical application requirements.

The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

The invention provides a laser machining method and device for a wafer. The method comprises that at least two laser beams having different energy distribution respectively execute a hacking process and a grooving process on a predetermined cutting path on the upper surface of the wafer in sequence and are used for forming a groove in the predetermined cutting path on the upper surface of the wafer. The predetermined cutting path on the upper surface of the wafer can be hacked by the laser beams with lower energy, the surface of the predetermined cutting path is roughened to improve a light absorptivity, which is convenient for preparation for a subsequent machining process, and the wafer is prevented from being damaged by stripping of a Low-K material caused by a fact that a Low-K layer on the surface of the wafer is machined by adopting the laser beams with over high energy; and meanwhile, the control precision on the energy of the laser beams in a subsequent machining process is higher, and further a laser machining effect of the upper surface of the wafer is improved.

The invention discloses a photoelectric detector, and the photoelectric detector comprises an absorption layer, a metal layer, a dielectric film and reflective metal, which are sequentially arranged from a bottom layer to a top layer. The absorption layer is used for absorbing target detection light. The metal layer comprises a strip-shaped grating and an upper contact electrode, and one side of the strip-shaped grating is located on the absorption layer, and the strip-shaped grating is used for gathering target detection light, and the upper contact electrode is electrically connected with alower contact electrode through a voltage. One side of the dielectric film is located above the other side of the strip-shaped grating, and the other side of the dielectric film is located below the reflective metal. The dielectric film is used for providing a cavity of the resonant cavity, and the reflective metal is used for reflecting target detection light. The invention also provides a preparation method of the photoelectric detector. According to the invention, a transverse resonant cavity effect and a longitudinal resonant cavity effect can be formed at the same time through the strip-shaped grating and the reflecting metal, and the higher light absorption rate is obtained in a thin absorption region. Moreover, the structure of the detector is simpler than the structure of a resonant cavity resonance detector, and the manufacturing cost is reduced.

The invention provides a method for introducing an AAO template as a nanometer grating to a solar cell structure, and discloses a thin film silicon solar cell double-trapping-light structure with AAO nanometer gratings on the surface and the bottom. A surface decreasing structure of the double-trapping-light structure is composed of AAO and ITO, and a back reflection structure is composed of AAO, ITO and Ag. FDTD solution software is utilized for optimizing structural parameters of the AAO. According to the double-trapping-light structure, surface reflection losses of a solar cell can be effectively reduced, the light path of photons with the long wavelength in an absorbed layer can be improved, and therefore light absorption of the thin film silicon solar cell within the range of 280 nm to 1100 nm is increased, and the absorption can be relatively increased to reach 74.44 percent. Due to the fact that the AAO is easy and convenient to manufacture, low in cost and suitable for mass production, it is predicated that in the near future, the AAO will certainly play a bigger role in application of the thin film silicon solar cell.

The invention discloses a preparation method of a ceramic. The preparation method of the ceramic comprises the following steps: mixing a ceramic substrate, a sintering aid and a monomer carbon to obtain a mixture; shaping, deguming and sintering, wherein based on the total weight of the mixture, the monomer carbon accounts for 0.001-1wt%. Furthermore, the invention provides the ceramic prepared by the method, a method for surface selective metalization of the ceramic and a prepared ceramic composite material. The carbon element in the ceramic material provided by the invention can improve the light absorption of the general white ceramic material on the energy beam of a low-power laser device, so that the ceramic material can be directly graphically etched and activated by the low-power laser, then the material is coated in a chemical plating solution, and the coating layer metal is firmly combined with the ceramic material; and the method is simple and easy to control.

The invention provides a photocatalytic treatment device for chlorinated aromatic organic matter polluted soil remediation leacheate. The photocatalytic treatment device comprises a to-be-treated leacheate feeding inlet, a phtocatalytic main body reaction tank, a graphene-titanium dioxide nanotube photocatalytic composite board and a reused leacheate outlet. The graphene-titanium dioxide nanotube photocatalytic composite board is prepared through a sol-gel method, a surface catalyst is uniform in load property, high in light absorption rate, the catalyst is not prone to disengagement, efficient adsorption, capture, degradation and mineralization can be conducted on target pollutants in a leacheate system under the light condition, the pollutants are removed first and then controlled, and rapid treatment of the leacheate is promoted. Due to the fact that the leacheate can be reused in the sol leaching step after being rapidly and efficiently treated through the phtocatalytic reaction tank, the total dosage of the leacheate is decreased, and pollution of the leacheate to the environment is reduced.

The present specification provides a photoactive layer including an electron accepting material and an electron donating material, an organic photovoltaic cell including the same, and a method of manufacturing the organic photovoltaic cell, which includes treating the electron accepting material and the electron donating material by a non-solvent.

The invention provides a femtosecond laser ablation-based infrared-enhanced Si-PIN detector and a preparation method thereof. The detector comprises an intrinsic silicon substrate, a femtosecond laser ablation microstructure layer, an infrared-enhanced amorphous silicon-ruthenium alloy film, a lower electrode, a P-type region, an annular P+ type region and an upper electrode, wherein the femtosecond laser ablation microstructure layer is a micron sharp cone array. The unabsorbed light which transmits through a space charge region is reflected for multiple times; a light propagation path and the photo capture ratio are increased; absorption and utilization of the light are improved; more photo-induced carriers are excited; the responsivity of the detector is improved; a relatively narrow optical band gap is obtained through controlling the ruthenium content; and the band gap of a silicon material is narrowed, so that near-infrared light with lower energy and a larger wavelength is captured; absorption of the near-infrared light can be additionally increased; and the detection spectrum range of a photoelectric detector is expanded.

The invention discloses a gold nanoparticle / graphene nano composite material which is prepared by a chemical assembly method for gold nanoparticles and graphene, and a directional freeze-drying methodis used for preparing the gold nanoparticle / graphene nano composite material into a gold nanoparticle / graphene three-dimensional light-heat (steam) conversion material. The material can efficiently convert light energy into heat energy, so that water can be quickly heated into water vapor to finally achieve the water purifying purpose, and therefore, various functions such as seawater desalting,fractionation, sterilization and sewage treatment are realized.