The invention discloses a solar single-
crystal efficient TOPCon + SE battery piece ultrahigh
sheet resistance diffusion process which mainly comprises a front
boron process, an SE process and a rear
oxidation process, and the front
boron process comprises high-temperature oxidation before
diffusion and a
diffusion process composed of three-step diffusion and heating propulsion. According to the invention, a layer of SiO2 can be coated on the surface of the
silicon wafer through high-temperature oxidation before diffusion and is used as an anti-reflection film layer; the PN junction is prepared by adopting a step-by-step diffusion method, so that the
advantage of good junction uniformity can be realized,
boron can be uniformly distributed on the surface of a
silicon wafer through a specific
boron diffusion method, and meanwhile, boron elements can be better deposited on the surface of the
silicon wafer through variable-temperature diffusion and propulsion; by adding the SE process, the square resistance can reach 700-800 ohms, the
junction depth in the grid line area is deeper, the increase of ohms becomes better, the
cell center recombination is reduced due to the lower
surface concentration, and the open-circuit
voltage of the
cell is improved; and the post-
oxidation process has an annealing effect and can repair lattice damage and the like.