537 results about "Photoactive layer" patented technology

A perovskite photoactive composite layer, a preparation method thereof, and a perovskite solar cell comprising the same are provided. The perovskite photoactive composite layer can induce smooth charge transport when applied to a solar cell by means of a two-dimensional perovskite photoactive layer grown by recrystallization in the vertical direction, and can passivate surface defects in two-dimensional perovskites and prevent the release of halogen atoms through effective passivation by means of a passivation layer consisting of an organic monomolecular compound containing zwitterions, thereby improving the photostability of the solar cell.

There is provided a perovskite material A perovskite material having the formula (I): AaA′bA″cSn(y)Pb(1-y)X3 (I) wherein A consists of a monovalent cation; A′ consists of a monovalent organic cation having an ionic radius greater than 2.53 Å; A″ consists of a monovalent inorganic cation; X comprises one or more halide anions; 0<a<1; 0<b<1; 0≤c<1; a+b+c=1; and 0<y<1. Also provided is a semiconductor device having a photoactive region comprising a perovskite material as defined herein; a semiconductor device which is a photovoltaic device; and a multijunction photovoltaic device comprising two or more sub-cells, wherein the first sub cell comprises a photovoltaic device as defined herein and a further sub-cell comprising a photoactive layer having a bandgap of between 1.5 and 1.9 eV.

The invention provides a trans-perovskite solar cell containing a fluorine arene phosphoric acid function compensation layer and a preparation method thereof, and the solar cell comprises a conductive substrate, a hole transport layer, a self-assembly monomolecular layer, a function compensation layer, a light active layer, an electron transport layer, a hole blocking layer and a back electrode which are sequentially stacked from bottom to top. The material of the function compensation layer is fluorine-containing aromatic hydrocarbon phosphoric acid. The fluorine-containing aromatic phosphoric acid provided by the invention can make up the anchoring defect on the basis of a self-assembled monomolecular layer, and can effectively passivate the defect at the bottom of perovskite through a plurality of active sites at the same time; the problem of non-ideal performance and stability caused by excessive defects at the self-assembled monomolecular layer / perovskite buried bottom interface of the trans-perovskite solar cell is solved, and a valuable scheme is provided for commercialization of the trans-perovskite solar cell in the future.

The invention relates to a hole transport layer material for an inverted perovskite solar cell, the inverted perovskite solar cell and application, the hole transport layer material is a self-assembled monomolecular layer hole transport material, and the self-assembled monomolecular layer hole transport material comprises an organic compound with the following general formula: # imgabs0 #, r1 and R2 represent independently substituted C6-C15 aryl groups, and the substituent group is a methoxy group or a methylthio group; according to the inverted perovskite cell, holes of the hole transport layer can be reduced, the film forming quality can be improved, and the defects of the lower interface of the perovskite photosensitive layer can be passivated, so that the open-circuit voltage (Voc) and the fill factor (FF) of the inverted perovskite cell are effectively improved, and the photoelectric conversion efficiency of the perovskite cell is effectively improved; and the photoelectric conversion efficiency of the perovskite solar cell is optimal.

The invention discloses a perovskite solar cell with all film layers prepared based on a controllable magnetron sputtering method. A perovskite solar cell with all film layers prepared based on a controllable magnetron sputtering method comprises a transparent conductive layer, an electron transport layer, a perovskite photoactive layer, a hole transport layer and a top electrode layer, and the transparent conductive layer, the electron transport layer, the perovskite photoactive layer, the hole transport layer and the top electrode layer are prepared by adopting the magnetron sputtering method. All the film layers of the perovskite solar cell provided by the invention are prepared by the magnetron sputtering method, so that other equipment is prevented from being added, and controllable preparation of all the film layers of the perovskite solar cell by the magnetron sputtering method is realized.

The invention provides a heterojunction-based multi-mode photoelectric synapse device and a preparation method thereof. The heterojunction-based multi-mode photoelectric synapse device comprises a bottom electrode, a memristive functional layer, a photosensitive layer and a top electrode which are stacked in sequence, the memristive functional layer comprises metal oxide rich in oxygen vacancies and is provided with a micro-nano structure surface; the photosensitive layer covers the surface of the micro-nano structure of the memristive function layer, and forms a heterojunction interface with the memristive function layer; the oxygen vacancies and the heterojunction interface act synergistically, so that the device can respond to changes of optical signals, ambient temperature and ambient oxygen partial pressure at the same time, and the optical pulse intensity and the optical response current generated by the device have a non-linear relationship. Through cooperative regulation and control of an oxygen vacancy and a heterojunction interface, the device can respond to changes of an optical signal, environment temperature and environment oxygen partial pressure at the same time, a non-linear relation exists between optical pulse intensity and optical response current generated by the device, and then the function of integrating multi-mode sensing and sensing storage calculation is achieved.

The invention provides a plasma resonance enhanced microstructure of an infrared photoelectric detector and a preparation method, and belongs to the technical field of medium-wave infrared photoelectric detectors, and the method comprises the steps: enabling incident light to irradiate downwards from the upper part of a top resonance layer when the medium-wave infrared photoelectric detector is used, and enabling the incident light to irradiate downwards from the lower part of the top resonance layer; the bottom resonance layer, the dielectric blocks and the top resonance layer form an array-arranged microstructure which can excite a plasmon mode, a surface plasmon resonance effect is triggered near the surface of the photosensitive layer through the combined action of the top resonance layer and the bottom resonance layer, the dielectric blocks are embedded in the bottom resonance layer, and the surface plasmon resonance effect is achieved. Incident light is localized in a shallower depth in a photosensitive surface, the intensity of a local electric field is enhanced, the reflection phenomenon of the photosensitive surface is reduced, the light absorption rate of the detector is improved, and the quantum efficiency of the medium-wave infrared photoelectric detector is further improved.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention discloses a perovskite light-emitting diode based on a double-layer micro-nano grating structure and a preparation method of the perovskite light-emitting diode. The preparation method comprises the following steps: firstly, carrying out ultrasonic cleaning and drying on a substrate; then, annealing is performed after a hole transport layer is spin-coated on the substrate; spin-coating photoresist on the hole transport layer, annealing, and carrying out exposure, development, etching and photoresist removal treatment to obtain the hole transport layer with a micro-nano grating structure; then, annealing is carried out after a perovskite light active layer is spin-coated on the hole transport layer; then, the perovskite optical active layer is spin-coated with an electron transport layer and then annealed; spin-coating photoresist on the electron transport layer, annealing, and carrying out exposure, development, etching and photoresist removal treatment to obtain the electron transport layer with a micro-nano grating structure; secondly, thermally spraying silver nanowires on the electron transport layer to form a cathode; and finally, packaging the device. A double-layer micro-nano grating structure is introduced, and the size of the double-layer micro-nano grating structure is adjusted, so that the light transmission direction is changed, and the light emitting efficiency of the perovskite light emitting diode is improved.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

An intelligent vision system, including a training array of photonic-organic electrochemical transistor (POECT) devices, each including a substrate, three terminals including a gate, a drain, and a source disposed over the substrate, wherein space between the drain and the source forms a channel, an electrolyte in fluid and electrical communication with the gate and the channel, wherein the channel is formed of a photoactive layer composed of donor-acceptor bulkheterojunction interfaces, each POECT device of the training array provides a memory feature when exposed to light, wherein an image to be recognized is imprinted on the training array by exposing the training array with light corresponding with the image to be recognized, and a discriminator configured to compare the training array with a test model associated with an image to be tested against the image to be recognized, wherein the discriminator signals a match or a mismatch based on a comparison.

To provide an electrophotographic photoreceptor that is excellent in wear resistance and reduces occurrence of charging unevenness.SOLUTION: An electrophotographic photoreceptor comprises a conductive substrate, and a photosensitive layer having a charge generating layer and a charge transport layer. An average thickness of the charge transport layer is 30 μm or more. The charge transport layer contains a polyarylate resin. An absorption spectrum measured by peeling off the photosensitive layer and dissolving the same in tetrahydrofuran satisfies a formula (1) and a formula (2). Formula (1): Iu≤0.95×Im. Formula (2): 1.05×Im≤Il. When a total length in an axial direction of the electrophotographic photoreceptor is defined as L, Im is absorbance at a wavelength of 678 nn related to the photosensitive layer peeled off from a center in the axial direction of the electrophotographic photoreceptor, Iu is absorbance at a wavelength of 678 nn related to the photosensitive layer peeled off from a position of 0.40 L toward one end from the center in the axial direction of the electrophotographic photoreceptor, and Il is absorbance at a wavelength of 678 nn related to the photosensitive layer peeled off from a position of 0.40 L toward the other end from the center in the axial direction of the electrophotographic photoreceptor.SELECTED DRAWING: None

The present invention discloses an organic narrow-band photodetector and a preparation method thereof, wherein the organic narrow-band photodetector comprises a resonant cavity layer, a base layer, a positive electrode layer, a hole transport layer, a photoactive layer, an electron transport layer and a negative electrode layer stacked sequentially from bottom to top; the resonant cavity layer comprises a first reflective layer, a cavity adjustment layer and a second reflective layer stacked sequentially in a direction away from the base layer, and the extinction coefficient of the cavity adjustment layer in the wavelength range of 400nm to 1600nm is less than 0.01, and the refractive index is 1.6 to 1.8. The organic narrow-band photodetector can realize a highly selective narrow-band organic photodetector by arranging a resonant cavity layer outside the device and controlling the cavity adjustment layer in the resonant cavity layer to have substantially no absorption in the visible to near-infrared band and a continuous and stable refractive index, and has strong light detection performance in the visible to near-infrared band and high selectivity.

The present invention provides a transferable photovoltaic device arrangement for transferring a thin film photovoltaic device to a bottom photovoltaic sub-cell to produce a series photovoltaic cell, the transferable photovoltaic device arrangement comprising: a flexible release substrate; and a thin film photovoltaic device comprising (i) a first transparent conductive layer over the flexible release substrate and (ii) a photoactive layer over the first transparent conductive layer, where the first transparent conductive layer is a solution treated layer, comprising at least one selected from the group consisting of conductive polymers or polymer composites, activatable binders and organic binders, and wherein the flexible release substrate is separable from the thin film photovoltaic device after adhesion of the thin film photovoltaic device to the bottom photovoltaic sub-cell with the transparent conductive adhesive, thereby exposing the first transparent conductive layer at the outer conductive surface of the thin film photovoltaic device.

The invention discloses a multiplication type organic photoelectric detector based on a hole barrier layer. The detector comprises a cathode, an anode, a photosensitive layer arranged between the cathode and the anode, the hole barrier layer arranged between the anode and the photosensitive layer, and an electron transport layer arranged between the cathode and the photosensitive layer. Wherein the photosensitive layer comprises at least one donor material; the donor material with the lowest HOMO energy level in the photosensitive layer and the hole blocking layer meet the following relation: Hmin-HP is greater than or equal to 0.5 eV; the donor material with the highest HOMO energy level in the photosensitive layer and the hole blocking layer meet the following relation: LP-Hmax is greater than or equal to 2.0 eV; wherein Hmin represents the HOMO energy level of the donor material with the lowest HOMO energy level in the photosensitive layer, HP represents the HOMO energy level of the hole blocking layer, Hmax represents the HOMO energy level of the donor material with the highest HOMO energy level in the photosensitive layer, and LP represents the LUMO energy level of the hole blocking layer.

An optoelectronic device includes a first electrode, a second electrode on the first electrode, a photoactive layer between the first electrode and the second electrode, and a first compound represented by the following chemical structure:wherein constituents of the chemical structure are defined in this disclosure.

The invention discloses a stretchable broadband light self-adaption-synaptic transistor based on a quasi-continuous hybrid photosensitive layer and a preparation method of the stretchable broadband light self-adaption-synaptic transistor. The full-stretchable quantum dot / elastomer hybrid light-sensitive sensor is constructed by a full-stretchable transistor with a bottom gate top contact structure and a stretchable quantum dot / elastomer hybrid light-sensitive layer. The stretchable quantum dot / elastomer hybrid photosensitive layer is prepared by regulating and controlling the blending proportion of photosensitive quantum dots and elastomer polymers, the pre-aggregation form and the self-assembly quasi-continuous-microsphere morphology. The intrinsic stretchable broadband light adaptive-synaptic transistor prepared by the invention has excellent field effect characteristics, excellent photoelectric response performance and high tensile strain capacity; meanwhile, the quantum dot has an excellent synaptic behavior simulation function, a broadband bionic visual self-adaption function and an imaging effect, the application prospect of the quantum dot in stretchable device construction is widened, and a feasible strategy is provided for the fields of wearable photoelectric devices, electronic skin, brain-like nerve calculation, bionic visual networks and the like in the future.

The utility model provides an infrared detector based on a mixed structure. The infrared detector comprises a substrate, a first electrode, a first photosensitive layer, a mask layer, a second photosensitive layer and a second electrode which are stacked in sequence, the first electrode is a vertical structure device, and the second electrode is a horizontal structure device; the first electrode is provided with a reflecting surface, and the first photosensitive layer is in a strip shape with a recess; the utilization of the surface plasmon enhancement effect of the first electrode and the second electrode is facilitated; the first electrode is used as a reflecting surface, so that the absorption efficiency of incident light is improved; the long-strip-shaped first photosensitive layer with the concave part is beneficial to multiple times of reflection and absorption of incident light, and the sensitivity and the accuracy of the infrared detector are improved.

The present invention relates to the field of anti-counterfeiting technology, and in particular to a method for preparing an invisible anti-counterfeiting film specially used for screen recognition of electronic devices. The preparation method comprises the following steps: preparing an invisible anti-counterfeiting film layer structure, and the process of preparing the invisible anti-counterfeiting film layer structure comprises imprinting a microstructure grating, and the process of imprinting the microstructure grating comprises the following steps: determining an imprinting space; dividing the imprinting space into a plurality of imprinting subspaces according to the distribution of anti-counterfeiting patterns in the overlapping area of ​​a photosensitive layer and a light-transmitting layer; correspondingly setting a plurality of grating imprinting molds based on the distribution of the plurality of imprinting subspaces; obtaining a temperature control center of the imprinting subspace according to the distribution of anti-counterfeiting patterns in the imprinting subspace; setting a temperature control device on the corresponding grating imprinting mold based on the temperature control center of the imprinting subspace; and controlling the temperature in the imprinting subspace by using the temperature control device on the grating imprinting mold. The present invention can solve the problem of uneven temperature control of the microstructure grating during the imprinting process.

The invention relates to a perovskite solar cell (100) comprising a layer system (10) and a coating (20), wherein the layer system (10) has a front electrode (11) on a front side, a rear electrode (13) on a back side, and at least one photoactive layer (12) with a perovskite material arranged between the front electrode (11) and the rear electrode (13), wherein the coating (20) on the front side of the layer system (10) has at least one front protective layer (21, 23) and at least one front adhesive layer (22, 24) arranged between the layer system (10) and the front protective layer (21, 23) with an adhesive material, and / or on the back side of the layer system (10) has at least one rear protective layer (26, 28) and at least one rear adhesive layer (27, 29) arranged between the layer system (10) and the rear protective layer (26, 28) with an adhesive material.wherein at least one front adhesive layer (22, 24) and / or at least one rear adhesive layer (27, 29) comprises at least one lead catcher additive, wherein the at least one lead catcher additive is mixed into the adhesive material of the at least one front adhesive layer (22, 24) and / or the at least one rear adhesive layer (27, 29).

The invention relates to a preparation method of high-quality MoTe2 quantum dot (QDs) ink and a thin film device, in particular to the technical field of preparation of MoTe2 QDs ink and near-infrared detectors, and the preparation method comprises the following steps: weighing MoTe2 powder, adding the MoTe2 powder into a solvent filled with N-methyl-pyrrolidone, carrying out ultrasonic treatment for 30 hours, and centrifuging to reserve precipitates; performing vacuum drying to obtain a cleaned MoTe2 nanosheet; the preparation method comprises the following steps: adding N, N-dimethylformamide into cleaned MoTe2 nanosheet powder, carrying out ultrasonic treatment for 30 hours, centrifuging a mixed solution subjected to ultrasonic treatment at the speed of 1,000 r / min to obtain a supernatant, centrifuging the supernatant at the speed of 8,000 r / min to obtain a precipitate, adding an acetone solution into the MoTe2 QDs precipitate, cleaning, centrifuging, and drying the precipitate to obtain final MoTe2 QDs powder; according to the invention, in the MSM structure device, the quantum dots are used as the photosensitive layer, the gold electrodes at the two ends are responsible for transmitting electrons and holes, and the planar device structure enables the MSM structure device to absorb incident light to a greater extent, so that compared with a device with a vertical structure, the attenuation effect of a functional layer on the incident light is avoided.

The invention relates to the technical field of PbS quantum dot solar cells, and provides an infrared quantum dot solar cell based on double hole transport layers and a preparation method of the infrared quantum dot solar cell. The infrared quantum dot solar cell comprises a substrate, a bottom electrode, an electron transport layer, a quantum dot photosensitive layer, a hole transport layer and a top electrode which are sequentially stacked, and the hole transport layer comprises a PbS-PbO-EDT hole collection layer and a PbS-PbCl2-EDT hole collection layer which are arranged on the quantum dot photosensitive layer in sequence. The hole transport layer of a double-layer structure is adopted, Cl ligands are introduced, stress caused by volume shrinkage during ligand exchange is reduced, open-circuit voltage and short-circuit current losses caused by cracks on the surface of the film are reduced, meanwhile, the energy band level of the composite film is almost kept unchanged, and voltage losses are avoided.

The present disclosure relates to a photosensitive laminate and a method of manufacturing the photosensitive laminate, the photosensitive laminate including: a support substrate; and a photosensitive resin layer formed on the support substrate, wherein 5 / mm 2 The following bubbles have a diameter of less than 1 pm.

The invention provides a photoactive layer conjugated polymer donor, a preparation method and application thereof, and a semitransparent solar cell device, and belongs to the technical field of organic synthesis. The invention provides a conjugated polymer donor for a photoactive layer, which takes thiophene as a skeleton, enhances the solubility by a long alkyl chain group, belongs to a narrow-band gap donor, is large in weight-average molecular weight, is high in viscosity of the conjugated polymer donor for the photoactive layer, and can be used for preparing an active layer with the same thickness. The conjugated polymer donor of the high-molecular-weight optical active layer can use a lower-concentration solution, so that the material loss of the active layer is reduced, the difficulty and time of proportioning are reduced, the process cost is reduced, the large-scale mass production and industrialization of OPV are facilitated, and the method has huge application potential in semitransparent organic solar cell devices.

The application relates to a hole transport layer solution with light active layer passivation and a preparation method and application thereof, and the preparation method comprises the following steps: mixing a dopant with a hole transport layer base solution, so that the hole transport layer solution with high performance and light active layer passivation is obtained. Compared with the prior art, the application can realize p-type doping of the hole transport layer in an oxygen-free environment. More importantly, the reaction product generated in the doping process can be used as a passivation agent, spontaneously enters the perovskite layer from the hole transport layer, and passivates defects of the perovskite body and defects of upper and lower interfaces. The method further improves the photoelectric conversion efficiency of the perovskite solar cell, and improves the stability and repeatability of the device.

A device for manipulating microdroplets using optically-mediated electrowetting comprising: a first composite wall comprising: a first transparent substrate; a first transparent conductor layer on the substrate having a thickness of 70 to 250 nm; a photoactive layer activated by electromagnetic radiation in the wavelength range 400-1000 nm on the conductor layer having a thickness of 300-1000 nm; and a first dielectric layer on the conductor layer having a thickness of 120-160 nm; a second composite wall comprised of: a second substrate; a second conductor layer on the substrate having a thickness of 70 to 250 nm; and an A / C source to provide a voltage across the first and second composite walls connecting the first and second conductor layers; at least one source of electromagnetic radiation having an energy higher than the bandgap of the photoexcitable layer; and means for manipulating the points of impingement of the electromagnetic radiation on the photoactive layer.

The invention discloses a dark current suppression method of a gold-doped lead sulfide colloid quantum dot photoelectric detector, and relates to a quantum dot technology. According to the method, a gold electrode is grown on a quartz substrate through magnetron sputtering to serve as a bottom electrode of the device. The preparation method comprises the following steps: spin-coating an Au NP-doped lead sulfide quantum dot solution on a gold electrode, covering an EDT solution on a quantum dot film to perform ligand exchange, spin-drying the quantum dot film on a spin-coating machine after ligand exchange, and washing residual ligands for multiple times in spin-coating by adopting a methanol solution. The PbS-EDT spin-coating step is repeated to stack the lead sulfide quantum dots, so that a compact quantum dot thin film is obtained to serve as a light absorption layer, then a zinc oxide thin film is grown on the lead sulfide thin film through magnetron sputtering to serve as an electron transport layer, and then high-transmittance low-resistance ITO is continuously grown through magnetron sputtering to serve as a top electrode of the device. According to the method, low-cost solution processing of the photosensitive layer of the device is achieved, batch preparation can be achieved, and the photoelectric property is improved through doping of gold nanocrystals.

The objective is to provide a flange, a photoreceptor drum, and an image forming apparatus that prevent contact between the flange and the substrate contact surface of the flange, which occurs when the flange is removed from the photoreceptor drum body and the photoreceptor drum is reused. [Solution] The flange 60 has an earth plate 61, an earth plate holding portion 62 that holds the earth plate 61, and a fitting portion 64 that fixes the earth plate holding portion 62 in the axial direction and fits into the inner surface of the base material 52. The earth plate 61 has a projection 61b that protrudes so as to contact the inner surface of the base material 52 so as to be electrically connected to a photoreceptor drum body 56 on which a photosensitive layer 54 is formed on the surface of the cylindrical base material 52. The flange 60 has a relationship between the distance X from the end of the projection 61b to the contact surface of the earth plate 61 with the earth plate holding portion 62, the distance Y from the end of the contact surface of the earth plate holding portion 62 with the earth plate 61 to the end of the base material contact surface 65, and the distance Z from the end of the base material contact surface 65 to the contact surface of the fitting portion 64 with the earth plate holding portion 62, where YX > 0 and Z > 300 μm.

To form more devices.SOLUTION: A method for processing a semiconductor wafer includes a wafer preparation step 101 for preparing a semiconductor wafer having no notch part and a circular horizontal cross-sectional shape, a photosensitive agent layer formation step 102 for coating a photosensitive agent onto the semiconductor wafer, and forming a photosensitive agent layer, an exposure step 105 for irradiating the photosensitive agent layer with light through a mask and a light modulator, and transferring a pattern onto the photosensitive agent layer, and a crystal orientation detection step 103 for detecting a crystal orientation of the semiconductor wafer, before the exposure step 105 is performed, wherein the exposure step 105 positions the semiconductor wafer to the pattern in a predetermined direction on the basis of the crystal orientation of the semiconductor wafer.SELECTED DRAWING: Figure 3

The application discloses a multi-band infrared polarization selection photoelectric detection array and a preparation method thereof in the field of photoelectric devices, and the photoelectric detection array comprises a transparent insulating substrate, and array-distributed internal unit pixel detectors are arranged above the transparent insulating substrate, wherein the internal unit pixel detectors comprise a gate electrode, an insulating layer, an active layer, a source-drain electrode and a photosensitive layer, the gate electrode is arranged above the transparent insulating substrate, the gate electrode is covered with the insulating layer, the active layer is arranged above the insulating layer, and the photosensitive layer and the source-drain electrode are arranged above the active layer. The photoelectric detection array can be combined with a polarimetry instrument and a chemical analysis platform device in aspects such as component identification and concentration detection of a liquid solution; the design and preparation of the field effect transistor photoelectric polarization selection device can simultaneously cancel a polaroid, realize integration of polarization angle detection and wavelength absorption detection, and can monitor the component and the concentration of the solution in a characteristic waveband of the solution.