225 results about "Photoactive layer" patented technology

The invention provides a heterojunction-based multi-mode photoelectric synapse device and a preparation method thereof. The heterojunction-based multi-mode photoelectric synapse device comprises a bottom electrode, a memristive functional layer, a photosensitive layer and a top electrode which are stacked in sequence, the memristive functional layer comprises metal oxide rich in oxygen vacancies and is provided with a micro-nano structure surface; the photosensitive layer covers the surface of the micro-nano structure of the memristive function layer, and forms a heterojunction interface with the memristive function layer; the oxygen vacancies and the heterojunction interface act synergistically, so that the device can respond to changes of optical signals, ambient temperature and ambient oxygen partial pressure at the same time, and the optical pulse intensity and the optical response current generated by the device have a non-linear relationship. Through cooperative regulation and control of an oxygen vacancy and a heterojunction interface, the device can respond to changes of an optical signal, environment temperature and environment oxygen partial pressure at the same time, a non-linear relation exists between optical pulse intensity and optical response current generated by the device, and then the function of integrating multi-mode sensing and sensing storage calculation is achieved.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention relates to a photoelectric detector and a preparation method and application thereof. The photoelectric detector comprises a substrate, a heat insulation layer and a photosensitive layer which are stacked from bottom to top, and further comprises a first electrode and a second electrode, and the first electrode and the second electrode are connected through the photosensitive layer. According to the photoelectric detector, the two-dimensional transition metal chalcogenide is used as the photosensitive layer, the amorphous gallium oxide is introduced as the heat insulation layer, and the specific heat insulation layer not only can improve the photoelectric property of the photoelectric detector at room temperature, but also can improve the photoelectric property of the photoelectric detector at high temperature (100-250 DEG C).

The invention relates to a perovskite solar cell (100) comprising a layer system (10) and a coating (20), wherein the layer system (10) has a front electrode (11) on a front side, a rear electrode (13) on a back side, and at least one photoactive layer (12) with a perovskite material arranged between the front electrode (11) and the rear electrode (13), wherein the coating (20) on the front side of the layer system (10) has at least one front protective layer (21, 23) and at least one front adhesive layer (22, 24) arranged between the layer system (10) and the front protective layer (21, 23) with an adhesive material, and / or on the back side of the layer system (10) has at least one rear protective layer (26, 28) and at least one rear adhesive layer (27, 29) arranged between the layer system (10) and the rear protective layer (26, 28) with an adhesive material.wherein at least one front adhesive layer (22, 24) and / or at least one rear adhesive layer (27, 29) comprises at least one lead catcher additive, wherein the at least one lead catcher additive is mixed into the adhesive material of the at least one front adhesive layer (22, 24) and / or the at least one rear adhesive layer (27, 29).

The invention relates to the technical field of PbS quantum dot solar cells, and provides an infrared quantum dot solar cell based on double hole transport layers and a preparation method of the infrared quantum dot solar cell. The infrared quantum dot solar cell comprises a substrate, a bottom electrode, an electron transport layer, a quantum dot photosensitive layer, a hole transport layer and a top electrode which are sequentially stacked, and the hole transport layer comprises a PbS-PbO-EDT hole collection layer and a PbS-PbCl2-EDT hole collection layer which are arranged on the quantum dot photosensitive layer in sequence. The hole transport layer of a double-layer structure is adopted, Cl ligands are introduced, stress caused by volume shrinkage during ligand exchange is reduced, open-circuit voltage and short-circuit current losses caused by cracks on the surface of the film are reduced, meanwhile, the energy band level of the composite film is almost kept unchanged, and voltage losses are avoided.

The present disclosure relates to a photosensitive laminate and a method of manufacturing the photosensitive laminate, the photosensitive laminate including: a support substrate; and a photosensitive resin layer formed on the support substrate, wherein 5 / mm 2 The following bubbles have a diameter of less than 1 pm.

The application relates to a hole transport layer solution with light active layer passivation and a preparation method and application thereof, and the preparation method comprises the following steps: mixing a dopant with a hole transport layer base solution, so that the hole transport layer solution with high performance and light active layer passivation is obtained. Compared with the prior art, the application can realize p-type doping of the hole transport layer in an oxygen-free environment. More importantly, the reaction product generated in the doping process can be used as a passivation agent, spontaneously enters the perovskite layer from the hole transport layer, and passivates defects of the perovskite body and defects of upper and lower interfaces. The method further improves the photoelectric conversion efficiency of the perovskite solar cell, and improves the stability and repeatability of the device.

The objective is to provide a flange, a photoreceptor drum, and an image forming apparatus that prevent contact between the flange and the substrate contact surface of the flange, which occurs when the flange is removed from the photoreceptor drum body and the photoreceptor drum is reused. [Solution] The flange 60 has an earth plate 61, an earth plate holding portion 62 that holds the earth plate 61, and a fitting portion 64 that fixes the earth plate holding portion 62 in the axial direction and fits into the inner surface of the base material 52. The earth plate 61 has a projection 61b that protrudes so as to contact the inner surface of the base material 52 so as to be electrically connected to a photoreceptor drum body 56 on which a photosensitive layer 54 is formed on the surface of the cylindrical base material 52. The flange 60 has a relationship between the distance X from the end of the projection 61b to the contact surface of the earth plate 61 with the earth plate holding portion 62, the distance Y from the end of the contact surface of the earth plate holding portion 62 with the earth plate 61 to the end of the base material contact surface 65, and the distance Z from the end of the base material contact surface 65 to the contact surface of the fitting portion 64 with the earth plate holding portion 62, where YX > 0 and Z > 300 μm.

To form more devices.SOLUTION: A method for processing a semiconductor wafer includes a wafer preparation step 101 for preparing a semiconductor wafer having no notch part and a circular horizontal cross-sectional shape, a photosensitive agent layer formation step 102 for coating a photosensitive agent onto the semiconductor wafer, and forming a photosensitive agent layer, an exposure step 105 for irradiating the photosensitive agent layer with light through a mask and a light modulator, and transferring a pattern onto the photosensitive agent layer, and a crystal orientation detection step 103 for detecting a crystal orientation of the semiconductor wafer, before the exposure step 105 is performed, wherein the exposure step 105 positions the semiconductor wafer to the pattern in a predetermined direction on the basis of the crystal orientation of the semiconductor wafer.SELECTED DRAWING: Figure 3

The application discloses a multi-band infrared polarization selection photoelectric detection array and a preparation method thereof in the field of photoelectric devices, and the photoelectric detection array comprises a transparent insulating substrate, and array-distributed internal unit pixel detectors are arranged above the transparent insulating substrate, wherein the internal unit pixel detectors comprise a gate electrode, an insulating layer, an active layer, a source-drain electrode and a photosensitive layer, the gate electrode is arranged above the transparent insulating substrate, the gate electrode is covered with the insulating layer, the active layer is arranged above the insulating layer, and the photosensitive layer and the source-drain electrode are arranged above the active layer. The photoelectric detection array can be combined with a polarimetry instrument and a chemical analysis platform device in aspects such as component identification and concentration detection of a liquid solution; the design and preparation of the field effect transistor photoelectric polarization selection device can simultaneously cancel a polaroid, realize integration of polarization angle detection and wavelength absorption detection, and can monitor the component and the concentration of the solution in a characteristic waveband of the solution.

This invention provides a microgap suspension device and a microgap inverted suspension heat treatment process, comprising the following steps: adding p-aminobenzenesulfonic acid to a solvent, mixing thoroughly, and then adding carbon nanotubes to obtain a carbon nanotube dispersion; stirring the carbon nanotube dispersion under heating conditions to obtain a p-aminobenzenesulfonic acid-modified carbon nanotube dispersion; coating a substrate surface with a lead bromide solution, then coating the lead bromide surface with a cesium bromide solution, then coating the cesium bromide surface with the p-aminobenzenesulfonic acid-modified carbon nanotube dispersion; and finally performing heat treatment through a microgap suspension device to form a photoactive layer film. The microgap inverted suspension heat treatment process of this invention, through controllable height suspension heat treatment, ensures that the film is almost unconstrained by the rigidity of the substrate during thermal expansion and cooling contraction, thus making it suitable for flexible substrates as well. It also avoids direct contact damage to flexible substrates during high-temperature heat treatment.

The invention discloses a perovskite photovoltaic cell with an adjacent interface of a Cu (TSPPa) 2 multifunctional passivation photosensitive layer and a preparation method of the perovskite photovoltaic cell, and belongs to the technical field of solar cells. The perovskite photovoltaic cell comprises a transparent conductive substrate, an electron transport layer, a perovskite photosensitive active layer, a hole transport layer and a metal electrode, and further comprises an interface passivation layer, and the interface passivation layer is located between the electron transport layer and the perovskite photosensitive active layer or located between the perovskite photosensitive active layer and the hole transport layer; the interface passivation layer is prepared from a Cu (TSPPa) 2 solution in an inert atmosphere through a spin-coating method or an anti-solvent method. Through modification of Cu (TSPPa) 2, the stability of the perovskite solar cell is improved, migration and extraction of holes are improved, non-radiative recombination of an interface is reduced, and a corresponding photovoltaic device has the advantages of being high in efficiency, long in service life, low in cost, high in stability and the like.

The invention relates to an optoelectronic component (100) comprising a first electrode (2), a second electrode (9) and a stack (20) arranged between the first electrode (2) and the second electrode (9), the stack (20) comprising at least a first light-sensitive layer (4) and a second light-sensitive layer (7), the first light-sensitive layer (4) comprising at least one perovskite absorber material having a wide band gap, and the second light-sensitive layer (7) comprising at least one perovskite absorber material having a wide band gap. And the second light-sensitive layer (7) is an organic light-sensitive layer having a narrow band gap comprising at least one donor and at least one acceptor as an organic absorbent material forming a donor / acceptor heterojunction, where the at least one donor of the second light-sensitive layer is an A-D-A compound and / or a BODIPY compound.

The application discloses a preparation method of a wide-bandgap perovskite photoactive layer, and comprises the following steps: S1, lead iodide powder, cesium iodide powder and ytterbium bromide powder are proportioned according to a proportioning molar ratio, and an inorganic target material is prepared by using a hot-press sintering process; S2, formamidinium hydriodide powder and methylammonium bromide powder are proportioned according to a proportioning molar ratio, and an organic target material is prepared by using a normal-temperature preparation process; S3, a pretreated substrate is placed on a magnetron sputtering sample table, the target materials prepared in steps S1 and S2 are respectively installed on corresponding radio frequency sputtering targets, and the background of a magnetron sputtering system is vacuumized; S4, high-purity argon gas is used as a sputtering gas, and a wide-bandgap perovskite thin film is prepared by using a magnetron co-sputtering method; the sputtering power of the inorganic target material prepared in step S1 is controlled, the sputtering power of the organic target material prepared in step S2 is controlled, and the thickness of the thin film is controlled, so that the high-quality thin film is prepared by using the differential target material preparation process.

The invention provides a monolithic three-dimensional integrated photoelectric detector and a preparation method thereof. The preparation method comprises the following steps: forming an isolation passivation layer on a readout integrated circuit serving as a substrate of the photoelectric detector; forming a source conductive through hole, a drain conductive through hole and a bottom gate contact hole in the isolation passivation layer; a conductive material is deposited and planarized, the source electrode conductive through hole, the drain electrode conductive through hole and the bottom gate contact hole are filled with the conductive material, the conductive material in the source electrode conductive through hole forms a source electrode conductive channel, the conductive material in the drain electrode conductive through hole forms a drain electrode conductive channel, and the conductive material in the bottom gate contact hole forms a bottom gate electrode layer; forming a bottom gate dielectric layer on the planarized surface, and forming a channel layer on the bottom gate dielectric layer; forming a source electrode and a drain electrode, wherein the source electrode and the drain electrode are electrically connected with the connecting port of the read-out integrated circuit through a source electrode conductive channel and a drain electrode conductive channel respectively; and forming a top gate structure which comprises a top gate dielectric layer and a photosensitive layer.

The invention relates to the field of P / N interactive batteries, in particular to a P / N interactive structure thin film solar cell module embedded packaging structure and method, and a conductive substrate and a thin film device stack arranged on the surface of the conductive substrate form a battery module. The thin film device stack comprises a conductive layer partition, a cathode modification layer, an optical active layer, an anode modification layer and a metal back electrode which are sequentially stacked on the surface of the conductive substrate from bottom to top; a packaging film corresponding to the conductive substrate in size covers the optical activity area of the thin-film device stack in a hot-pressing manner, and a notch corresponding to a tab fixing area on an upper electrode of the battery assembly is formed in the packaging film so as to fix a tab; the battery assembly is embedded into the packaging cover plate to enable the illumination surface to face the outside of the packaging cover plate, and the packaging cover plate is provided with a tab leading-out port for leading out the tab outwards; and a gap between the packaging cover plate and the battery assembly is filled with light-cured packaging glue. Through two-stage packaging, the P / N interactive structure thin film solar cell is prevented from being influenced by external factors, and meanwhile, the long-term environmental stability of the cell is improved.

A photonic-organic electrochemical transistor (POECT), including a substrate, three terminals including a gate, a drain, and a source disposed over the substrate, wherein the space between the drain and the source forms a channel, and an electrolyte in fluid and electrical communication with the gate and the channel, wherein the channel is formed of a photoactive layer composed of donor-acceptor bulk-heterojunction interfaces.

A method of processing a substrate includes providing a substrate including a pattern of lines extending in a first direction, and reducing stitching defects by removing material from the pattern of lines using a gas cluster beam. The pattern of lines includes a first subset of lines stitched to a second subset of lines in a stitching region that includes the stitching defects. The gas cluster beam includes an azimuthal component substantially parallel to the first direction. The stitching defects may be further reduced using an additional gas cluster beam in the opposite and substantially parallel to the first direction. The method may further include exposing a first region and a second region of a photosensitive layer of the substrate to different structured actinic radiation, and forming the pattern of lines on the substrate by developing the first region and the second region.

The present invention efficiently replicates a hologram having interference fringes similar to those of a plurality of master holograms. An apparatus for replicating interference fringes of master holograms 31 arranged in multiple rows and multiple columns to a photosensitive layer 11 includes: an exposure part C having a master layer 3 with the master holograms 31; a conveyance part B for placing the photosensitive layer 11 on a first surface side of the master layer 3; and a light source D for irradiating the master holograms 31 with coherent light L1. The conveyance part B places an elongated belt-shaped photosensitive layer 11 on the first surface side of the master layer 3, and then stops conveyance of the photosensitive layer 11. The light source D has a position changing mechanism part 63 for changing the irradiation position of the light L1 with respect to the master holograms 31, and the position changing mechanism part 63 changes the irradiation position to a first position for irradiating the plurality of master holograms 31 in one row with the light L1 and a second position for irradiating the plurality of master holograms 31 in another row with the light L1.

An electrophotographic photoreceptor includes: a conductive base, a photosensitive layer provided on the conductive base, and a protective layer provided on the photosensitive layer. The protective layer is a cured body of a photocurable composition that includes a photocurable compound and a photopolymerization initiator. The photopolymerization initiator includes a first compound having an acylphosphine oxide structure and a second compound having an α-aminoacetophenone structure and an absorption coefficient at a wavelength 365 nm smaller than that of the first compound. A total content of the first compound and the second compound with respect to 100 parts by mass of the photocurable compound is 5 parts by mass or more and 20 parts by mass or less.

The invention relates to an organic compound and application thereof in an organic electronic device, and belongs to the technical field of organic solar cells. When the organic compound provided by the invention is applied to an organic solar cell device as a non-fullerene acceptor material, dissociation, diffusion and charge transfer of excitons in a photoactive layer can be promoted, and the photoelectric property of the device is improved.

Disclosed is an apparatus for exposing a relief precursor (P) comprising a substrate layer and at least one photosensitive layer, said apparatus comprising: a first light source (1) comprising an array of LEDs configured to illuminate a first side of said relief precursor; a second light source (2) configured to illuminate a second side of the relief precursor opposite the first side; wherein the first light source comprises a support having a light absorbing surface facing the second light source, such that light reflected or transmitted in the direction of the first light source is at least partially absorbed by the light absorbing surface of the support.

The invention discloses a perovskite solar cell based on a multi-site chelate ligand and a preparation method thereof. The cell comprises an ITO conductive glass layer, a hole transport layer, a perovskite photoactive layer, a passivation layer, an electron transport layer and a metal electrode from bottom to top. The method is characterized in that a polydentate chelating ligand N, N '-ethylenediamine disuccinic acid (EDDS) is doped in a perovskite photoactive layer, and the ligand and uncoordinated Pb and Idefects on the surface of perovskite form stable coordinate bonds simultaneously through a plurality of carboxyl groups in molecules of the ligand, so that multi-site synergistic passivation is realized, and non-radiative recombination is effectively inhibited. The process is simple and is compatible with the existing spin coating process. The maximum power conversion efficiency of the obtained device can reach 24.57%, the initial efficiency of 90.2% can still be kept after continuous illumination for 3000 hours, and the device has high efficiency and high stability and is wide in application prospect.

The invention relates to the technical field of light guide plate manufacturing, and discloses a composite light guide plate, a preparation method thereof and a backlight module. The method comprises the following steps: providing a light guide plate mold with a variable-diameter micropore array, carrying out variable-pressure molding on a preset formula mixture to obtain a porous gradient matrix, imprinting the porous gradient matrix coated with the light curing agent based on a flexible prism array mold; a nested grating structure with direction selectivity is further formed through laser and plasma synergistic etching, an optical active layer and magnetron sputtering are sequentially formed on a nested grating base body, an optical active layer with the light-emitting regulation and wavelength conversion capacity is constructed, and through plasma activation and hot pressing, the light-emitting wavelength conversion structure with the light-emitting regulation and wavelength conversion capacity is obtained. The fluorinated polyimide film is combined with the tuning substrate, so that the overall structural strength of the composite light guide plate is enhanced, the multifunctional composite light guide plate with high interface bonding strength is formed, and the problems of interface delamination and stress concentration easily occurring in a multi-layer light guide structure are effectively solved.

This invention discloses a non-fullerene polymer solar cell with a rare-earth ion-complexed cathode interface layer and its fabrication method, relating to the field of polymer solar cells. The polymer solar cell, from bottom to top, comprises a transparent glass substrate with ITO, an anode interface layer, a photoactive layer, a cathode interface layer, and a metal electrode layer. The cathode interface layer is PDINO complexed with rare-earth ions. This invention utilizes the complexation of rare-earth ions with PDINO to effectively reduce the influence of amino groups in PDINO on the non-fullerene acceptor material, protecting the original electronic structure and intramolecular charge transfer of the acceptor material from damage by the amino groups. Simultaneously, rare-earth ions can absorb short-wavelength sunlight that the photoactive layer fails to absorb, converting this short-wavelength sunlight into wavelengths within the absorption range of the photoactive layer, thereby increasing the light absorption intensity of the photoactive layer and improving the energy conversion efficiency of the device.

The application discloses a high specific detectivity optical detection device and a preparation method thereof. The detection device is composed of a bottom substrate, a conductive cathode, an electron transport layer, an organic photoactive layer, a hole transport layer and a metal anode. The photoactive layer adopts a polymer donor PDPP3T and a fullerene acceptor PC 71 BM is blended to form a bulk heterojunction, and a solvent additive 1,8-diiodooctane is added to regulate the heterojunction morphology. The electron transport layer uses pure zinc oxide as a single interface layer or ethoxylated polyethyleneimine modified zinc oxide as a composite interface. Under the action of a reasonable additive content, the dark current of the detection device is significantly reduced, and a low dark current and high specific detectivity optical detection device is realized.

The present inventive concept relates to a polymer composite electrode with a tunable work function and high conductivity, a method for manufacturing the same, and an organic electronic device including the polymer composite electrode. According to the present inventive concept, the polymer composite electrode, prepared by adding a perfluorinated polymer compound of Formula 1 to a conductive polymer PEDOT: PSS, followed by sulfuric acid treatment, has a high transmittance of 85% or more in the visible light region and an average electrical conductivity of 2,000 S / cm or higher. Moreover, the work function of the polymer composite electrode can be matched to the highest occupied molecular orbital (HOMO) energy level of the photoactive layer by adjusting the concentration of the perfluorinated polymer compound of Formula 1. Accordingly, even when the photoactive layer is directly formed on the polymer composite electrode without a hole transport layer, efficient hole transport can still be achieved, and thus, the polymer composite electrode can be usefully employed as an anode in optoelectronic devices such as organic solar cells, serving as a viable alternative to conventional ITO.

The invention provides a battery module and a laser grooving method, and solves the problem of how to improve the reliability of a solar battery in the prior art. The battery module comprises: a substrate; the first electrode layer is positioned on one side of the substrate; the optical active layer is located on the side, away from the substrate, of the first electrode layer; the second electrode layer is located on the side, away from the substrate, of the optical active layer; wherein the battery module is provided with a first groove, the first groove penetrates through the second electrode layer and the optical active layer and exposes the first electrode layer, the first groove comprises a first sub-groove and a second sub-groove which are adjacently arranged in the direction close to the substrate, and the orthographic projection of the second sub-groove on the substrate is located in the orthographic projection range of the first sub-groove on the substrate.

The present invention relates to a hybrid solar cell and a fabrication method thereof. The hybrid solar cell according to the present invention comprises: a transparent substrate; a porous layer provided on the transparent substrate, wherein the porous layer comprises a plurality of particles; a first photoactive layer provided on the plurality. of particles; a first charge transport layer provided on the first photoactive layer; a first electrode provided on the porous layer, wherein the first electrode comprises at least one through-hole; a second charge transport layer provided on the first electrode and the first charge transport layer, wherein the second charge transport layer is in direct contact with the first charge transport layer, wherein each of the first charge transport layer and the second charge transport layer is a solid layer and transports electrons or holes; and a second electrode provided on the second charge transport layer.

A photosensitive element for a permanent resist according to the present disclosure comprises a support film and a photosensitive layer formed upon the support film, wherein: the photosensitive layer contains (A) a resin containing an acid-modified vinyl group, (B) a photopolymerizable compound, (C) a photopolymerization initiator, and (D) an inorganic filler; the (D) inorganic filler contains an inorganic filler having a refractive index of 1.500-1.700; the photosensitive layer has a thickness of 5-35 μm; and the photosensitive layer has an absorbance of 0.40-1.00 with respect to light having a wavelength of 380 nm.