The application discloses a photovoltaic device and a preparation method thereof, and belongs to the technical field of photovoltaic devices. The photovoltaic device comprises, from bottom to top, a substrate, an
electron transport layer, a YbBr3 spin-coated modified PbS-PbX2
quantum dot layer, a PbS-EDT layer and a
metal layer. In the photovoltaic device, YbBr3 is spin-coated on the surface of a PbS-PbX2
quantum dot layer after
halogen ligand exchange is completed, so that Yb 3+ / Br ‑ forms an ionic coordination bond on the surface of PbS; first, by utilizing the
quantum confinement characteristics of Yb 3+ , two 980 nm near-
infrared photons are emitted after visible light with higher energy is absorbed, and then the photons are absorbed by adjacent PbS quantum dots again, so that the
utilization rate of the photons is improved, and the short-circuit current and overall power conversion efficiency are significantly improved; second, Yb 3+ / Br ‑ passivates the surface vacancy defects, reduces the
surface trap density, prolongs the
carrier lifetime, improves the open-circuit
voltage and the
fill factor.