351 results about "Semiconductor electrode" patented technology

A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.

A single chamber fuel cell comprised of a cell arranged in a mixed fuel gas comprised of hydrogen or another fuel gas and oxygen, wherein the cell used is a pn junction type semiconductor having electrodes of a p-type semiconductor with carriers of holes and an n-type semiconductor with carriers of electrons connected to ends of electrical takeout wires, and each of the p-type semiconductor and n-type semiconductor is formed porous to an extent enabling the mixed fuel gas to pass.

A differential response-type light-receiving device comprising: a semiconductor electrode comprising an electrically conductive layer and a photosensitive layer containing a semiconductor sensitized by a dye; an ion-conductive electrolyte layer; and a counter electrode, the differential response-type light-receiving device making time-differential response to quantity of light to output a photoelectric current. A composite light-receiving device comprising the differential response-type light-receiving device and a stationary response-type light-receiving device, and an image sensor using the differential response-type light-receiving device or the composite light-receiving device are also provided.

In a photoelectric conversion device, in a contact between a p-type semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a conductivity type opposite to that of the p-type semiconductor is provided between the p-type semiconductor 3a and the electrode 2. The existence of the n-type semiconductor 6 allows a recombination rate of photo-generated carriers excited by incident light to be effectively reduced, and allows a dark current component to be effectively prevented from being produced. Therefore, it is possible to improve photoelectric conversion efficiency as well as to stabilize characteristics. Further, a tunnel junction is realized by increasing the concentration of a doping element in at least one or preferably both of the p-type semiconductor 3a and the n-type semiconductor 6 in a region where they are in contact with each other, thereby keeping ohmic characteristics between the semiconductor and the electrode good.

Disclosed herein is a semiconductor electrode including a layer of metal oxide particles; a dye coating a surface of the layer of metal oxide particles; and a carbon nanotube, having at least one anchoring functional group, attached to the layer of metal oxide particles through the anchoring functional group. Also disclosed are a method for preparing the semiconductor electrode and a solar cell including the semiconductor electrode.

A dye-sensitized solar cell comprising a semiconductor electrode comprising electrospun ultra-fine titanium dioxide fibers and fabrication method thereof are disclosed. The dye-sensitized solar cell comprises a semiconductor electrode comprising an electrospun ultra-fine fibrous titanium dioxide layer, a counter electrode and electrolyte interposed therebetween. A non-liquid electrolyte such as polymer gel electrolyte or the like having low fluidity, as well as the liquid electrolyte, can be easily infiltrated thereinto. In addition, electrons can be effectively transferred since titanium dioxide crystals are one-dimensionally arranged.

Disclosed herein are a solar cell-driven display device wherein a dye-sensitized solar cell, which comprises a light-absorbing layer that comprises a semiconductor electrode including a transparent electrode formed on a substrate and nanocrystals adsorbed with a photosensitive dye on the transparent electrode, and a hole transport layer and a counter electrode, is formed so as to exhibit a display device function using a quantum dot light-emitting layer, as well as a manufacturing method thereof. The solar cell-driven display device exhibits the display device function using only solar light, without needing a separate power supply device, and thus can be applied to advertising displays in isolated areas or as other outdoor advertising displays.

A dye-sensitized solar cell according to one aspect of the present invention includes: a first base member having a first substrate provided with a light-transmitting property, a light-transmitting conductive layer formed on a surface of the first substrate and a semiconductor electrode formed on a surface of the light-transmitting conductive layer and containing a sensitizing dye; a second base member having a second substrate and a catalyst layer formed on a surface of the second substrate in such a manner that the catalyst layer faces the semiconductor electrode; an electrolyte layer formed between the semiconductor electrode and the catalyst layer; and either a collector electrode containing tungsten or a pair of collector electrodes, at least one of which contains tungsten, to collect charge from the semiconductor electrode. The dye-sensitized solar cell of this aspect of the present invention not only shows a sufficient photoelectric conversion efficiency but attains excellent durability by prevention of corrector electrode corrosion.

Provided are a dye sensitized metal oxide semiconductor electrode having a metal oxide semiconductor film that can adsorb a sufficient amount of dye due to a high specific surface area and exhibits high electrical conductivity due to tight contact of metal oxide particles, and a dye sensitized solar cell that exhibits high power generation efficiency by using this dye sensitized metal oxide semiconductor electrode. The dye sensitized metal oxide semiconductor electrode is produced by forming a metal oxide semiconductor film on a transparent conductive film formed on a substrate. A stock solution containing a metal oxide precursor is jetted onto the transparent conductive film by electrospinning. A nanofiber layer containing a metal oxide precursor is deposited on the transparent conductive film, and this deposited layer is fired.

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

The present invention provides a semiconductor electrode of organic dye-sensitized metal oxide having a semiconductor layer of metal oxide that can be easily prepared, and an organic dye-sensitized solar cell. The semiconductor electrode of organic dye-sensitized metal oxide comprises a substrate having a transparent electrode thereon, a semiconductor layer of metal oxide provided on the electrode and an organic dye absorbed on a surface of the semiconductor layer, the semiconductor layer being formed by a vapor deposition process.

Disclosed herein are a metal oxide paste composition comprising a carboxylic ester dispersant and / or a phosphate dispersant, and a method for manufacturing a semiconductor electrode for solar cells using the same. The disclosed metal oxide paste composition improves the dispersibility of metal oxide nanoparticles. Thus, if it is used to manufacture a semiconductor electrode for solar cells, it will allow the increased adsorption of a dye, thus improving the photoelectric efficiency of the resulting solar cell.

Disclosed herein is a transparent electrode for solar cells, comprising a transparent electrode, a photocatalytic layer formed on the transparent electrode and comprising a photocatalytic compound, a metal mesh layer formed on the photocatalytic layer, and an electrically conductive layer formed of an electrically conductive material coated on the metal mesh layer. Disclosed herein too is a manufacturing method thereof and a semiconductor electrode comprising the same. The disclosed transparent electrode includes a metal mesh layer formed in an existing transparent electrode for solar cells, and thus has low resistance without a reduction in transmittance. Accordingly, a solar cell that utilizes the disclosed transparent electrode has high-efficiency characteristics.

With respect to a photoelectric conversion device comprising a semiconductor electrode composed of semiconductor fine particles and a metal film to be an opposite electrode, a polyethylene dioxythiophene (PEDOT) / polystyrenesulfonic acid (PSS) film is formed by spin coating on a transparent electrode of a metal oxide such as ITO to remarkably improve the adhesion property of the metal film to the metal oxide film and the pollution by the different type metal of the metal film to be the opposite electrode can be prevented in the photoelectric conversion device. Further, a semiconductor electrode composed of semiconductor fine particles can be formed well on the metal oxide film by low temperature process while elution of the metal oxide film is prevented to obtain the photoelectric conversion device.

A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.

In a photoelectric transfer device having a semiconductor electrode composed of semiconductor nanoparticles and an electrolyte layer between a pair of transparent conductive substrates, a transparent conductive substrate at the light-receiving side is made by stacking a transparent substrate, conductive wiring layer and a metal oxide layer in order from the light-receiving side and having sheet resistance equal to or lower than 10 Ω / □. The metal oxide layer is made of an In—Sn composite oxide, SnO2, TiO2, ZnO, or the like.

In a photoelectric conversion device using a semiconductor electrode composed of semiconductor nanoparticles, the semiconductor electrode is made by coating and drying a paste containing a binder and semiconductor nanoparticles dispersed therein on a transparent conductive substrate, and pressing the paste to bond the semiconductor nanoparticles onto the transparent conductive substrate while heating it to a temperature in the range from 30° C. to the softening temperature of the transparent conductive substrate, or, if the semiconductor nanoparticles retain a sensitizing dye, to a temperature in the range from 30° C. to lower one of the softening temperature of the transparent conductive substrate and the deactivation temperature of the sensitizing dye.

A tandem photovoltaic device and a method for fabricating the photovoltaic device is disclosed. The tandem photovoltaic device comprises two or more photovoltaic layers laminated to each other, each of which including a semiconductor electrode, an electrolyte layer and a counter electrode. A counter electrode of the upper photovoltaic layer is patterned in a grid shape so as to include a plurality of light-transmitting portions, which permit transmission of light to the lower photovoltaic layer. The tandem photovoltaic device has the advantages of high power conversion efficiency and degree of integration. Advantageously, the tandem photovoltaic device can reduce electric power generation costs.

The present invention provides a semiconductor electrode of organic dye-sensitized metal oxide having a semiconductor layer of metal oxide that can be easily prepared, and an organic dye-sensitized solar cell. The semiconductor electrode of organic dye-sensitized metal oxide comprises a substrate having a transparent electrode thereon, a semiconductor layer of metal oxide provided on the electrode and an organic dye absorbed on a surface of the semiconductor layer, the semiconductor layer being formed by a vapor deposition process.

According to an aspect of the present invention, there is provided a dye-sensitized solar cell including a first base member having a first light-transmitting substrate, a light-transmitting conductive layer formed on a surface of the first substrate, a first semiconductor electrode containing a sensitizing dye and arranged on a surface of the conductive layer, a second semiconductor electrode containing a sensitizing dye and arranged with a first surface thereof facing the first semiconductor electrode, a first collector electrode formed on a second surface of the second semiconductor electrode and an electrolyte layer arranged between the first and second semiconductor electrodes, a porous insulating layer arranged in contact with the second semiconductor electrode and the first collector electrode or with the first collector electrode, and a second base member having a second substrate and a catalyst layer formed on a surface of the second substrate and facing the porous insulating layer. With such two semiconductor electrodes provided in the dye-sensitized solar cell, it is possible to allow highly efficient utilization of irradiation light and thereby obtain improved photoelectric conversion efficiency.

The invention relates to a metal-semiconductor electrode structure which comprises a semiconductor layer and a metal electrode, and a graphene layer is further arranged between the semiconductor layer and the metal electrode to reduce the contact resistance between the metal electrode and the semiconductor layer. The metal-semiconductor electrode structure provided by the invention has the advantages of improving the energy band state of metal-semiconductor contact by inserting the graphene layer between the metal and the semiconductor layer, being widely applicable to metals with different work functions and semiconductors with different doping types and doping concentrations, and reducing the contact potential barrier, thereby playing the function of reducing the contact resistance. The metal-semiconductor electrode structure provided by the invention has simple preparation method, stable performance, good repeatability and low cost and plays an important role in realizing micro nano semiconductor electronic devices with high performance and low cost.

A highly durable photoelectric converter with excellent photoelectric conversion efficiency is prevented from resistance loss or lowering of photoelectric conversion efficiency and free from problems of corrosion and reverse electron transfer reaction. Specifically disclosed is a photoelectric converter (1) comprising a semiconductor electrode (11), a counter electrode (12), and an electrolyte layer (5) arranged between the electrodes. The semiconductor electrode (11) includes a transparent conductive substrate (10) including a transparent base (2), a conductive interconnection layer (3), and a metal oxide layer (30), and a semiconductor particle layer (4) arranged on the transparent conductive substrate (10). The transparent base (2) of the transparent conductive substrate (10) has a trench (3h) on one surface, and the conductive interconnection layer (3) is embedded in this trench (3h).

Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coated on the substrate, and a metal oxide layer formed on the transparent electrode wherein the metal oxide layer contains a phosphate.Further disclosed is a solar cell employing the semiconductor electrode.

A method for producing an encapsulation module and / or for encapsulating a micromechanical arrangement, wherein electronic connection provisions are formed from a blank of electrically conductive semiconductor material, by one or more structuring processes and / or etching processes, wherein, in the course of forming the electronic connection provisions, a pedestal of the semiconductor material arises, on which the electronic connection provisions are arranged, wherein the latter are subsequently embedded with an embedding material and the embedding material and / or the semiconductor pedestal are removed after the embedding to an extent such that a defined number of the electronic connection provisions have electrical contacts on at least one of the outer surfaces of the encapsulation module thus produced, whereinupon forming the electronic connection provisions, on the pedestal of the semiconductor material, an insular material hump is formed, on which a plated-through hole is arranged in each case, and which embodies a semiconductor electrode.

Disclosed herein is a photoelectric converter which has an improved photoelectric conversion efficiency and an improved current density owing to the increased amount of sensitizing dye supported on the semiconductor electrode. The photoelectric converter (1) is comprised of a semiconductor electrode (11), a counter electrode (12), and an electrolyte layer (5) held between them. The semiconductor electrode (11) is comprised of a transparent substrate (2) and a layer of fine semiconductor fine particles (4). The photoelectric converter (1) is characterized in that the layer of fine semiconductor fine particles (4) undergoes hydrothermal treatment so that the semiconductor fine particles have an increased specific surface area and hence an increased amount of sensitizing dye supported thereon.

Disclosed are an organic dye having a specific structure, a photoelectric conversion material containing the dye, a semiconductor electrode formed of a substrate having an electrically conductive surface, a semiconductor layer coated on the electrically conductive surface and the above dye adsorbed on the surface, and a photoelectric conversion device to which the above dye is applied. The present invention uses the above dye and can therefore provide a photoelectric conversion device excellent in photoelectric conversion efficiency, and the photoelectric conversion device is suitable for use in a solar cell or the like.

A photosensitized solar cell includes a transparent substrate, a groove formed in a surface of the transparent substrate, and having a wall surface and a bottom surface, at least a part of the wall surface being parallel to or inclined to the surface of the transparent substrate, a current collector wiring made of metal, provided on the bottom surface and wall surface of the groove, a transparent electrode layer provided in a non-groove region on the surface of the transparent substrate, a counter substrate, a conductive layer provided on the counter substrate, a semiconductor electrode provided between the conductive layer and the transparent electrode layer, and carrying a dye, and an electrolyte layer provided between the semiconductor electrode and the conductive layer.

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.