7 results about "Semiconductor electrode" patented technology

This invention belongs to the field of gas enrichment technology and provides a gas enrichment device and method based on a semiconductor cooling chip. The device includes a heat-insulating shell, inside which a cooling chip, a first heat sink, and a second heat sink are installed. A first adsorption tube and a second adsorption tube are respectively installed on both sides of the cooling chip. A sample source, a carrier gas source, and an analysis system are also provided. During operation, the cooling chip enriches the gas on its cooled side, while the heated side performs desorption. Then, the semiconductor electrodes are reversed, and the cooling and heating areas are interchanged. This design fully utilizes the effects of both sides of the cooling chip, avoiding energy waste. Furthermore, the first and second adsorption tubes operate independently without interference, ensuring a continuous and uninterrupted gas enrichment and desorption process. This significantly improves detection efficiency and reduces the overall process time.

The utility model relates to the field of keyboard backlight modules, in particular to a uniform light-emitting keyboard backlight module. The keyboard backlight module comprises a circuit board, a light-emitting chip, a packaging layer, a light guide piece and a shading piece, the light guide piece is fixed between the circuit board and the shading piece, the light-emitting chip is connected to the circuit board and wrapped in the packaging layer, a lamp groove is formed in the light guide piece, the light-emitting chip is arranged in the lamp groove, and the edges of the circuit board and the shading piece are fixedly connected together; a P-type semiconductor electrode and an N-type semiconductor electrode are arranged on the light-emitting chip, a bonding pad is arranged on the circuit board, and the electrode face of the light-emitting chip faces the circuit board below. According to the utility model, the N-type semiconductor and the P-type semiconductor of the light-emitting chip are directly welded on the bonding pad of the circuit board, and the light-emitting chip is fully wrapped by the packaging layer to realize packaging. Therefore, the structure is simplified, and the manufacturing cost is reduced. The anti-dazzling screen prevents halo or stray light from being generated in the area, which does not need to emit light, of the keyboard.

The utility model provides a kind of volatile organic compound recovery device based on electrode cryogenic, including the cryogenic zone for condensing volatile organic compound, the heat dissipation zone located the two sides of cryogenic zone, it is connected between the cryogenic zone with the heat dissipation zone by semiconductor component piece area;The semiconductor component piece area includes cold end heat pipe plate, hot end heat pipe plate and multiple semiconductor electrode groups installed between the two;The hot end heat pipe plate is connected with the heat dissipation zone, and the cold end heat pipe plate is connected with cryogenic zone;The semiconductor component piece area is electrically connected with the gas detection equipment of waste gas pipeline, the signal output of the gas detection equipment to the semiconductor component piece area, the semiconductor component piece area receives the signal and controls the number of energized group of semiconductor electrode group according to the signal.

The present application relates to the technical field of photoelectrochemical performance analysis, and discloses a method for quantitatively analyzing photoelectrochemical performance based on polarization potential calibration, which comprises the following steps: (1) in a three-electrode system, photo-induced OCP of a semiconductor electrode with a photoelectric functional coating is tested under solution environment and light, and a photo-induced polarization curve of the semiconductor electrode is obtained; (2) in a three-electrode system, dark-state OCP of the semiconductor electrode is tested under solution environment and closed light, and a dark-state polarization curve of the semiconductor electrode is obtained; (3) according to the photo-induced polarization curve and the dark-state polarization curve, a semi-logarithmic polarization curve, a current density-potential curve, a ΔE-i curve and a ΔE-Δi curve are obtained; and (4) photoelectrochemical performance of the semiconductor electrode is analyzed according to the curves. The method can directly characterize actual photo-induced current density of the photoelectric functional coating and quantitatively analyze electrochemical performance thereof.

The application discloses an integrated filtering and ozone disinfection double-mode water tank water outlet device, which comprises a base, a inner sleeve fixed in the base, an ozone generator fixed in the inner sleeve, a shell fixedly connected to the top of the inner sleeve, a filter element arranged in the shell, a cover covering the shell, a threaded sleeve extending upwards and downwards and fixed to the lower end of the base, and a water inlet pipe and a water outlet pipe both extending upwards and downwards and penetrating through the threaded sleeve. The water tank water outlet device can be directly installed in the original washing liquid hole of the water tank, realizes the integration of filtering and ozone disinfection double functions without changing the original cold and hot water faucet layout, the metal-based BDD electrode has extremely small resistance, which is beneficial to reducing the overall electrode impedance, the metal-based BDD electrode has a stable passivation layer and can keep low background current for a long time, and the metal-based BDD electrode has a wide current use range and can perform long-term and high-efficiency electro-oxidation reaction.

The invention provides a semiconductor material surface work function measurement system, method and device and a medium, and relates to the technical field of work function measurement, and the system comprises a driving assembly, a detection assembly and a processing assembly; the driving assembly is used for driving the semiconductor electrode and the metal electrode to periodically contact and separate; the detection assembly is used for applying bias voltage to the metal-semiconductor electrode pair when the semiconductor electrode is in contact with the metal electrode, and detecting pulse current generated by an external circuit when the semiconductor electrode is separated from the metal electrode; and the processing assembly is used for determining the Schottky barrier height of the metal-semiconductor electrode pair according to the multiple groups of different bias data and current data, and determining the work function of the semiconductor electrode according to the work function of the metal electrode and the Schottky barrier height of the metal-semiconductor electrode pair. The measurement of the work function of the semiconductor electrode is realized through the semiconductor material surface work function measurement system.

A semiconductor 3D capacitor includes a semiconductor electrode disposed in a semiconductor substrate, a metal electrode over the semiconductor electrode, and an isolation structure between the semiconductor electrode and the metal electrode. The isolation structure includes a dielectric feature between the semiconductor electrode and the metal electrode, and a dielectric layer between the dielectric feature and the metal electrode. A bottom surface of the metal electrode is between a topmost surface of the dielectric feature and a bottom surface of the dielectric feature in a direction perpendicular to a surface of the semiconductor substrate.