17 results about "Semiconductor electrode" patented technology

The present disclosure relates to the technical field of display chips. Disclosed are a full-color MicroLED and a manufacturing method therefor. The full-color MicroLED comprises a driving substrate, a first light-emitting layer, a first connecting layer, a second light-emitting layer, and a second connecting layer; the driving substrate comprises a first P-type semiconductor electrode transition layer; the first light-emitting layer comprises first light-emitting units and a second P-type semiconductor electrode transition layer; the first connecting layer comprises a first N-type semiconductor electrode transition layer, first N-electrode grids, and a third P-type semiconductor electrode transition layer; the second light-emitting layer comprises second light-emitting units and a fourth P-type semiconductor electrode transition layer; the second connecting layer comprises a second N-type semiconductor electrode transition layer and second N-electrode grids; a color conversion layer is provided at the position of the second connecting layer corresponding to some of the second light-emitting units. In the present disclosure, the driving substrate drives the light-emitting units on the first light-emitting layer and the second light-emitting layer to respectively emit green light and blue light, and then part of the blue light of the second light-emitting units is converted into red light by means of the color conversion layer, thereby achieving full-color light emission.

The invention discloses a memristor based on a covalent organic framework and a preparation method and application thereof.The memristor comprises a substrate, a semiconductor electrode, a covalent organic framework film and a metal electrode which are sequentially arranged in a stacked mode, and the covalent organic framework film is composed of 1, 3, 4, 5, 6, 7, 8, 8, 9, 10, 11, 12, 13, 14, 16, 17, 17, 17, 17, 17, 17, 17, 17, the catalyst is prepared by condensing 1, 3, 5-tri (4-aminophenyl) benzene and terephthalaldehyde or terephthalaldehyde with an alkyl or alkoxy side chain. The covalent organic framework film has a highly ordered structure and an adjustable porous structure, the preparation process is simple, the film thickness is uniform, the flatness and the crystallinity are high, and the dielectric property is adjusted, so that the switching voltage and the cycling stability of the memristor are adjusted, and the memristor has stable and repeatable switching performance; the COFs-based memristor has high on / off ratio, low device variability and high flexibility, can be used for preparing the COFs-based memristor, can provide technical support for neuromorphic devices with high efficiency, adjustability, structure adjustability and rich functions, and can be applied to the field of intelligent sensing and autonomous system control such as an auxiliary driving system.

To provide an oxide semiconductor paste for a solar cell capable of suppressing the reduction of surface smoothness and the generation of pinholes on a porous semiconductor layer and allowing the solar cell to exert high photoelectric conversion efficiency.SOLUTION: The oxide semiconductor paste for a solar cell includes oxide semiconductor particles, water, a water-soluble solvent, and a leveling agent. The content ratio of the oxide semiconductor particles is 44 mass% or more and 57 mass% or less. The content ratio of water is 36 mass% or more and 48 mass% or less. The content ratio of the leveling agent is 0.01 mass% or more and 0.25 mass% or less.SELECTED DRAWING: None

This invention belongs to the field of gas enrichment technology and provides a gas enrichment device and method based on a semiconductor cooling chip. The device includes a heat-insulating shell, inside which a cooling chip, a first heat sink, and a second heat sink are installed. A first adsorption tube and a second adsorption tube are respectively installed on both sides of the cooling chip. A sample source, a carrier gas source, and an analysis system are also provided. During operation, the cooling chip enriches the gas on its cooled side, while the heated side performs desorption. Then, the semiconductor electrodes are reversed, and the cooling and heating areas are interchanged. This design fully utilizes the effects of both sides of the cooling chip, avoiding energy waste. Furthermore, the first and second adsorption tubes operate independently without interference, ensuring a continuous and uninterrupted gas enrichment and desorption process. This significantly improves detection efficiency and reduces the overall process time.

The invention provides a semiconductor electrode cleaning device which comprises an electrode, a cleaning assembly and a power unit. Wherein the cleaning assembly comprises a spray head, a connecting pipe and a liquid storage unit, the connecting pipe is connected with the liquid storage unit and the spray head, the spray head is arranged on the periphery of the electrode and exposes the electrode, and cleaning liquid for cleaning the electrode is provided for the spray head through the liquid storage unit; the power unit is connected with the cleaning assembly, and cleaning power is provided for the cleaning liquid through the power unit. According to the semiconductor electrode cleaning device, the cleanliness of the electrode can be remarkably improved, and the service life of the electrode is prolonged.

The utility model relates to the field of keyboard backlight modules, in particular to a uniform light-emitting keyboard backlight module. The keyboard backlight module comprises a circuit board, a light-emitting chip, a packaging layer, a light guide piece and a shading piece, the light guide piece is fixed between the circuit board and the shading piece, the light-emitting chip is connected to the circuit board and wrapped in the packaging layer, a lamp groove is formed in the light guide piece, the light-emitting chip is arranged in the lamp groove, and the edges of the circuit board and the shading piece are fixedly connected together; a P-type semiconductor electrode and an N-type semiconductor electrode are arranged on the light-emitting chip, a bonding pad is arranged on the circuit board, and the electrode face of the light-emitting chip faces the circuit board below. According to the utility model, the N-type semiconductor and the P-type semiconductor of the light-emitting chip are directly welded on the bonding pad of the circuit board, and the light-emitting chip is fully wrapped by the packaging layer to realize packaging. Therefore, the structure is simplified, and the manufacturing cost is reduced. The anti-dazzling screen prevents halo or stray light from being generated in the area, which does not need to emit light, of the keyboard.

The utility model provides a kind of volatile organic compound recovery device based on electrode cryogenic, including the cryogenic zone for condensing volatile organic compound, the heat dissipation zone located the two sides of cryogenic zone, it is connected between the cryogenic zone with the heat dissipation zone by semiconductor component piece area;The semiconductor component piece area includes cold end heat pipe plate, hot end heat pipe plate and multiple semiconductor electrode groups installed between the two;The hot end heat pipe plate is connected with the heat dissipation zone, and the cold end heat pipe plate is connected with cryogenic zone;The semiconductor component piece area is electrically connected with the gas detection equipment of waste gas pipeline, the signal output of the gas detection equipment to the semiconductor component piece area, the semiconductor component piece area receives the signal and controls the number of energized group of semiconductor electrode group according to the signal.

The present application relates to the technical field of photoelectrochemical performance analysis, and discloses a method for quantitatively analyzing photoelectrochemical performance based on polarization potential calibration, which comprises the following steps: (1) in a three-electrode system, photo-induced OCP of a semiconductor electrode with a photoelectric functional coating is tested under solution environment and light, and a photo-induced polarization curve of the semiconductor electrode is obtained; (2) in a three-electrode system, dark-state OCP of the semiconductor electrode is tested under solution environment and closed light, and a dark-state polarization curve of the semiconductor electrode is obtained; (3) according to the photo-induced polarization curve and the dark-state polarization curve, a semi-logarithmic polarization curve, a current density-potential curve, a ΔE-i curve and a ΔE-Δi curve are obtained; and (4) photoelectrochemical performance of the semiconductor electrode is analyzed according to the curves. The method can directly characterize actual photo-induced current density of the photoelectric functional coating and quantitatively analyze electrochemical performance thereof.

The application discloses an integrated filtering and ozone disinfection double-mode water tank water outlet device, which comprises a base, a inner sleeve fixed in the base, an ozone generator fixed in the inner sleeve, a shell fixedly connected to the top of the inner sleeve, a filter element arranged in the shell, a cover covering the shell, a threaded sleeve extending upwards and downwards and fixed to the lower end of the base, and a water inlet pipe and a water outlet pipe both extending upwards and downwards and penetrating through the threaded sleeve. The water tank water outlet device can be directly installed in the original washing liquid hole of the water tank, realizes the integration of filtering and ozone disinfection double functions without changing the original cold and hot water faucet layout, the metal-based BDD electrode has extremely small resistance, which is beneficial to reducing the overall electrode impedance, the metal-based BDD electrode has a stable passivation layer and can keep low background current for a long time, and the metal-based BDD electrode has a wide current use range and can perform long-term and high-efficiency electro-oxidation reaction.

The utility model relates to the technical field of semiconductor lead wires, and discloses a device for pulling a semiconductor electrode lead wire, which comprises a working frame, a semiconductor placing area is arranged on the surface of the working frame, a moving mechanism body is arranged on the surface of the working frame, and a wire pulling gun body for pulling a wire is arranged on the surface of the moving mechanism body. The other end of the wire drawing gun body communicates with a feeding pipe, a workbench is fixed to one side of the surface of the working frame, a through groove is formed in the surface of the workbench, and a cutting mechanism is arranged in an inner cavity of the workbench. According to the wire drawing gun, after the wire drawing gun body finishes working, a worker can use the cutting mechanism to cut redundant materials of the wire drawing gun body, the situation that the next wire drawing work is affected due to the fact that the materials are exposed for a long time is avoided, in addition, the wire drawing gun body can be dredged under the action of the dredging mechanism, and the working efficiency is improved. And the raw materials are prevented from being cooled in the gun head to influence normal work of the wire drawing gun body.

PROTECTION DEVICE FOR ELECTRONIC COMPONENT, PROTECTION SYSTEM AND ASSOCIATED ELECTRONIC CIRCUIT. One aspect of the invention relates to a protection system (30) for an electronic component (C1) comprising a plurality of protection devices (3) distributed so as to form a plurality of distinct protection chains (31), each protection device (3) comprising: two doped semiconductor electrodes (4, 6); an insulating layer (8) separating the semiconductor electrodes (4, 6), an opening (9) being provided in the insulating layer (8) to bring the first and second semiconductor layers (4, 6) into contact, a distance (h8) separating the two semiconductor electrodes (4, 6) being less than 5 µm. Figure to be published with the abstract: Figure 19

An MEMS has a movable element and a drive device having a first doped semiconductor electrode of the movable element and a second doped semiconductor electrode which is arranged opposite to the first semiconductor electrode and configured to generate while generating a first change zone of charge carriers in the first semiconductor electrode and a second change zone of charge carriers in the second semiconductor electrode.

A MEMS comprising a movable element and a drive device comprising a first doped semiconductor electrode and a second doped semiconductor electrode of the movable element, the second doped semiconductor electrode is arranged opposite the first semiconductor electrode and is configured to generate an electrostatic force between the first semiconductor electrode and the second semiconductor electrode while generating a first carrier change region in the first semiconductor electrode and a second carrier change region in the second semiconductor electrode.

The invention provides a semiconductor material surface work function measurement system, method and device and a medium, and relates to the technical field of work function measurement, and the system comprises a driving assembly, a detection assembly and a processing assembly; the driving assembly is used for driving the semiconductor electrode and the metal electrode to periodically contact and separate; the detection assembly is used for applying bias voltage to the metal-semiconductor electrode pair when the semiconductor electrode is in contact with the metal electrode, and detecting pulse current generated by an external circuit when the semiconductor electrode is separated from the metal electrode; and the processing assembly is used for determining the Schottky barrier height of the metal-semiconductor electrode pair according to the multiple groups of different bias data and current data, and determining the work function of the semiconductor electrode according to the work function of the metal electrode and the Schottky barrier height of the metal-semiconductor electrode pair. The measurement of the work function of the semiconductor electrode is realized through the semiconductor material surface work function measurement system.

A MEMS comprises a moving element and a drive unit comprising a first doped semiconductor electrode of the moving element and a second doped semiconductor electrode arranged opposite the first semiconductor electrode and configured to generate a first change zone of charge carriers in the first semiconductor electrode and a second change zone of charge carriers in the second semiconductor electrode.

Forming an electrode structure includes forming a first cavity and a second cavity in a first hard mask layer, filling the first cavity and the second cavity with an electrically conductive material to form a first electrically conductive pillar and a second electrically conductive pillar; and planarizing exposed surfaces of the first and second electrically conductive pillars. Thereafter, a second hard mask layer is disposed on the first hard mask layer, a third cavity is formed passing through the second hard mask layer, and a second electroplating and planarization process fills the third cavity with the electrically conductive material to form a third electrically conductive pillar contacting the second electrically conductive pillar. A first electrode comprises the first electrically conductive pillar, and a second electrode comprises a combination of the second and third electrically conductive pillars.

A semiconductor 3D capacitor includes a semiconductor electrode disposed in a semiconductor substrate, a metal electrode over the semiconductor electrode, and an isolation structure between the semiconductor electrode and the metal electrode. The isolation structure includes a dielectric feature between the semiconductor electrode and the metal electrode, and a dielectric layer between the dielectric feature and the metal electrode. A bottom surface of the metal electrode is between a topmost surface of the dielectric feature and a bottom surface of the dielectric feature in a direction perpendicular to a surface of the semiconductor substrate.