13results about How to "Lower the barrier" patented technology

This invention provides a method for preparing a foamed copper-based composite organic compound layer catalytic material, comprising the following steps: forming 8-hydroxyquinoline molybdenum (Mo(C)) on the surface of a foamed copper matrix. 9 H 6 NO) 4 Organic compound layer; 8-hydroxyquinoline molybdenum (Mo(C)) 9 H 6 NO) 4 The organic compound layer is converted into phthalimide 8-hydroxyquinoline molybdenum (C). 8 H 4 NO 2 ) 2 (C 9 H 6 NO) 2 ; Phthalimide 8-hydroxyquinoline molybdenum Mo(C) 8 H 4 NO 2 ) 2 (C 9 H 6 NO) 2 Conversion to copper phthalimide / 8-hydroxyquinoline molybdenum Cu(C) 8 H 4 NO 2 ) 2 / Mo(C 9 H 6 NO) 2 The foamed copper-based composite organic compound layer catalytic material is finally obtained. The catalytic material prepared by the method of this invention can effectively improve the Faradaic efficiency, ammonia selectivity, production rate, and nitrate removal rate of the electrochemical reduction of nitrate to ammonia technology.

The invention provides an organic compound, a preparation method thereof and an organic electroluminescent device, and belongs to the technical field of luminescent materials, and the organic compound has a structure as shown in a general formula I. The organic compound is used as a luminescent auxiliary material, can effectively improve the luminescent efficiency and stability of the organic electroluminescent device, and has good application prospects. The service life is prolonged, the driving voltage is reduced, and the device is endowed with more excellent comprehensive performance.

The invention discloses a preparation method of N-acetyl blue and application of the prepared N-acetyl blue in fabric dyeing, and relates to the technical field of compound synthesis. According to the preparation method of the N-acetyl blue, H2SO4 and aluminum chloride are adopted as a composite catalyst to catalyze N, N-dimethyl formamide; according to the present invention, the N, N '-diacetyl blue hydrolysis reaction is performed, such that the potential barrier of the N, N'-diacetyl blue hydrolysis reaction can be reduced so as to directionally remove one acetyl in the molecule to generate the N-acetyl blue, the product with the yield of more than 53% and the purity of more than 78% can be obtained by using the preparation method, and the purity and the reaction yield are excellent.

The invention belongs to the technical field of hard carbon materials, and particularly relates to a preparation method and application of a polyurethane-based hard carbon material. The preparation method comprises the following steps: carrying out roasting carbonization and post-treatment on a solid polyurethane material at 900-1400 DEG C to obtain a powdery polyurethane-based hard carbon material; the solid polyurethane material is a polyurethane product prepared from reaction raw materials including isocyanate, non-phosphorus-containing polyol and phosphorus-containing polyol through a reaction. According to the invention, the polyurethane material is prepared by adding the phosphorus-containing polyol, and the polyurethane material is applied to the field of batteries as a negative electrode raw material, so that high carbonization yield can be maintained, and excellent performances such as initial coulombic efficiency, energy density, cycle capacity retention rate and the like of the battery can be realized.

The invention discloses a segmented polycrystalline silicon deep groove silicon carbide MOSFET, and belongs to the technical field of semiconductor power devices. According to the device, a P + polycrystalline silicon section connected with a source electrode, a lightly doped Npolycrystalline silicon section and an N + polycrystalline silicon section connected with a grid electrode are sequentially arranged in a deep groove in the depth direction, and the P + polycrystalline silicon section, the lightly doped Npolycrystalline silicon section and the N + polycrystalline silicon section jointly form a polycrystalline silicon diode structure similar to a PIN. The P + polycrystalline silicon section at the bottom of the groove is used for shielding an electric field, the gate-drain coupling capacitance (Cgd) is effectively reduced, and the switching characteristic of the device is improved; meanwhile, by utilizing the characteristic that the reverse leakage current of the PIN structure is obviously increased under the short-circuit temperature rise, the self-adaptive reduction of the gate-source voltage (Vgs) is realized through gate loop resistance voltage division, so that the short-circuit current is inhibited. While voltage resistance and conduction performance of the device are ensured, short-circuit endurance capability and safe turn-off reliability of the device are remarkably improved.

This invention discloses an organic compound, its preparation method, and an organic electroluminescent device, relating to the field of luminescent materials technology. The chemical formulas I-1 and I-2 provided by this invention are fluorene compounds with a unique fluorene structure. As a light-emitting auxiliary layer in a red organic electroluminescent device, this type of compound can reduce the potential barrier between the hole transport layer and the light-emitting layer, lower the driving voltage of the organic electroluminescent device, further improve the hole transport rate and electron blocking ability, and increase the charge balance between holes and electrons within the light-emitting layer. This allows light to be formed effectively within the light-emitting layer, rather than on the surface of the hole transport layer, thereby greatly improving the device's lifetime and luminous efficiency.

This invention discloses a monolithically integrated complementary inverter for GaN HEMT and its fabrication method, relating to the field of semiconductor technology. The inverter includes an n-channel and a p-channel enhancement-mode GaN HEMT, both laterally distributed on a common epitaxial layer of the same substrate. A two-dimensional dielectric layer, a graphene layer, and an isolation dielectric layer are sequentially disposed above the epitaxial layer. The source and drain electrodes of the p-channel device are located in grooves after etching the isolation dielectric layer and the graphene layer, with the gate groove etched into the P-GaN layer. The source and drain electrodes of the n-channel device are located in grooves etched from the epitaxial layer to the bottom of the barrier layer, with the gate electrode located above the unetched P-GaN layer. Isolation between devices is achieved through isolation trenches extending into the buffer layer. By introducing a two-dimensional dielectric layer and a graphene layer, this invention induces a two-dimensional hole gas at the P-GaN interface, significantly increasing the hole carrier concentration, solving the performance bottleneck of p-channel devices, and realizing high-speed, low-power monolithically integrated complementary logic.

The invention discloses a transistor, a preparation method thereof, a semiconductor device and electronic equipment. The transistor includes a channel, a gate structure, a first pole assembly, and a second pole assembly. The gate structure includes a gate electrode. The first pole assembly and the second pole assembly are located on the two sides of the gate structure in the first direction respectively and connected with the channel. The orthographic projection of at least one of the first pole assembly and the second pole assembly on the substrate is overlapped with the orthographic projection of the channel on the first plane; or, the orthographic projection of the first pole assembly and the orthographic projection of the second pole assembly on the first plane are not overlapped with the orthographic projection of the channel on the first plane, and the two ends of the gate structure in the first direction are correspondingly flush with the two ends of the channel in the first direction. According to the transistor and the preparation method thereof, the semiconductor device and the electronic equipment, the distance between the gate electrode and the source / drain electrode can be reduced, and the electrical property of the transistor can be improved.

The invention discloses a lithium ion battery high-entropy alloy modified silicon-oxygen-carbon composite material as well as a preparation method and application thereof. The innermost layer of the composite material is a multiphase inorganic-organic SiOC material, the middle layer of the composite material is SiOC loaded with a high-entropy alloy, the composite material has a micro-mesoporous structure from inside to outside, and the outermost layer of the composite material is a high-conductivity carbon tube. The composite material prepared by the invention takes an interface as a starting point and takes layer-by-layer superposition as a path to finally generate a shell with a complete structure. By forming a high-entropy alloy modified coating layer which is internally and externally communicated on the surface of SiOC, the ion and electron conductivity can be remarkably improved, more lithium storage active points are provided, heteroatom-doped high-conductivity carbon tubes grow on the catalytic surface, the impedance of the material in the charge-discharge process is reduced, and the cycle rate performance of the material is improved.

The present application relates to the technical field of carbon black production, in particular to a kind of carbon black and its production process.The present application solves the problems of large viscosity of ethylene tar, incomplete cracking, poor dispersibility and surface inertness of carbon black.First, the raw oil is treated by decalin / NMP complex solvent and ultrasonic wave, then a ferrocene / potassium borate composite catalyst is added, and the double-stage atomization technology is combined with gradient temperature field for combustion cracking;In the reaction quenching section, the modified quenching liquid containing KH-550 and urea is sprayed in the specific temperature zone for in-situ grafting, and finally the finished product is obtained by alternating speed granulation and microwave fluidized drying;The prepared carbon black has the characteristics of high structure, high yield, low impurity and high surface activity, and has high application value in the field of rubber reinforcement and high-performance composite materials.

The invention provides a perovskite solar cell, and relates to the technical field of solar cells. The transparent conducting layer is arranged on the glass substrate in the first direction; the hole transport material layer is arranged on the side, away from the glass substrate, of the transparent conducting layer in the first direction, the molecular structure of the hole transport material layer comprises a triarylamine core, each aryl group is 3, 4, 5-trimethoxyphenyl, and nitrogen atoms are substituted by-(CH2) 4-PO (OH) 2 groups; the perovskite layer is arranged on the side, away from the glass substrate, of the hole transport material layer in the first direction; the electron transport layer is arranged on one side, far away from the glass substrate, of the perovskite layer along the first direction; the buffer layer is arranged on the side, away from the glass substrate, of the electron transfer layer in the first direction; the metal electrode is arranged on the side, away from the glass substrate, of the buffer layer in the first direction; the antireflection layer is arranged on the side, away from the glass substrate, of the metal electrode in the first direction. The invention also provides a preparation method of the perovskite solar cell.

The application relates to low-voltage gradient zinc oxide pressure-sensitive ceramic and a preparation method and application thereof. By adjusting sintering pressure and content of a second phase, the pressure-sensitive voltage of undoped and doped pressure-sensitive ceramic can be effectively controlled, low-voltage gradient ZnO pressure-sensitive ceramic is obtained, and the problem that the existing zinc oxide pressure-sensitive ceramic cannot realize the low-voltage gradient characteristic is solved.

The invention belongs to the technical field of semiconductor material preparation and new energy, and particularly discloses flexible water photovoltaic fabric based on MXene and Al2O3 and a preparation method of the flexible water photovoltaic fabric. The flexible water photovoltaic fabric based on MXene and Al2O3 comprises a flexible cotton cloth substrate, a flexible water photovoltaic fabric layer and a flexible water photovoltaic fabric layer, the functional coating is loaded on the surface of the cotton cloth fiber and in interwoven pores; the functional coating is of a graded composite structure containing Al2O3 nano particles and MXene nano sheets; wherein the Al2O3 nanoparticles are used as a water evaporation induced charge generation source; the MXene nanosheets are mutually lapped to form a three-dimensional conductive network, and the three-dimensional conductive network is used for rapidly extracting and conducting charges generated at the interface of the Al2O3 nanoparticles. The flexible water photovoltaic fabric prepared by the invention has excellent flexibility and better current output performance.