29results about How to "Lower the barrier" patented technology

The invention discloses a bimetallic Ag and Pd loaded WO3 material and a preparation method thereof, and relates to the technical field of sensor material preparation, and the preparation method comprises the following steps: 1, dissolving a tungsten source in an ethanol solution, mixing, hydrolyzing, aging, precipitating, washing, drying, calcining and cooling; 2, adding deionized water, adding a silver source solution and a palladium source, adding ascorbic acid, and stirring; 3, centrifuging, washing with ethanol and deionized water, and drying; 4, selecting a gold interdigital electrode with aluminum oxide ceramic as a substrate as a base electrode material, dipping the WO3 nano-particle dispersion liquid by using a line drawing pen, and uniformly coating the WO3 nano-particle dispersion liquid on the surface of the interdigital electrode; and 5, electrode drying and heat treatment. The efficient gas sensing material is prepared through the preparation method which is easy to operate, environmentally friendly and economical, and the gas sensing material has the advantages of being high in sensitivity, rapid in response, good in selectivity and the like at the low working temperature.

The invention relates to a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) device with fast recovery and low power consumption characteristics, and belongs to the technical field of semiconductors. The device includes: a drain metal contact; the substrate is formed on the contact surface of the drain electrode metal; the drift region is formed on the surface of the substrate; the NCSL is formed on the surface of the drift region; the first Pbase is formed on the surface of the NCSL; the first source region is formed on the surface of the first Pbase; the second Pwell is formed on the surface of the drift region; the second P + region is formed on the surface of the second Pwell; the first P-well is formed on the surface of the drift region; the first P + region is formed on the surface of the first Pwell; the MOS channel diode is formed on the surface of the second P-well; the L-shaped split gate is formed on the surfaces of the MOS channel diode and the NCSL; and a source metal contact formed on the top of the device.

The invention provides an interface modification method of zinc oxide and a perovskite photoelectric device preparation method using the same, and belongs to the field of perovskite materials. According to the invention, the surface of the zinc oxide (ZnO) layer is spin-coated with an alcohol polymer, a polyvinylpyrrolidone solution or a polyvinyl carbazole solution, and annealing is carried out to form an ultrathin modification layer, so that interface modification of the ZnO transmission layer is realized; the interface modification layer used in the invention can reduce the potential barrier between the electron transport layer and the perovskite layer, and helps perovskite to form a light-emitting layer film with low defect density and good surface appearance; in addition, the operation stability of a perovskite light-emitting diode device can be remarkably improved through the perovskite thin film modified by the ZnO interface of the light-emitting layer of the perovskite photoelectric device.

This invention provides a method for preparing a foamed copper-based composite organic compound layer catalytic material, comprising the following steps: forming 8-hydroxyquinoline molybdenum (Mo(C)) on the surface of a foamed copper matrix. 9 H 6 NO) 4 Organic compound layer; 8-hydroxyquinoline molybdenum (Mo(C)) 9 H 6 NO) 4 The organic compound layer is converted into phthalimide 8-hydroxyquinoline molybdenum (C). 8 H 4 NO 2 ) 2 (C 9 H 6 NO) 2 ; Phthalimide 8-hydroxyquinoline molybdenum Mo(C) 8 H 4 NO 2 ) 2 (C 9 H 6 NO) 2 Conversion to copper phthalimide / 8-hydroxyquinoline molybdenum Cu(C) 8 H 4 NO 2 ) 2 / Mo(C 9 H 6 NO) 2 The foamed copper-based composite organic compound layer catalytic material is finally obtained. The catalytic material prepared by the method of this invention can effectively improve the Faradaic efficiency, ammonia selectivity, production rate, and nitrate removal rate of the electrochemical reduction of nitrate to ammonia technology.

The invention provides an organic compound, a preparation method thereof and an organic electroluminescent device, and belongs to the technical field of luminescent materials, and the organic compound has a structure as shown in a general formula I. The organic compound is used as a luminescent auxiliary material, can effectively improve the luminescent efficiency and stability of the organic electroluminescent device, and has good application prospects. The service life is prolonged, the driving voltage is reduced, and the device is endowed with more excellent comprehensive performance.

The invention relates to a low-voltage-gradient zinc oxide voltage-sensitive ceramic and a preparation method and application thereof.According to the low-voltage-gradient zinc oxide voltage-sensitive ceramic and the preparation method and application thereof, the voltage-sensitive voltage of non-doped and doped voltage-sensitive ceramics can be effectively regulated and controlled by adjusting sintering pressure and the content of a second phase, and the low-voltage-gradient zinc oxide voltage-sensitive ceramic is obtained; the problem that the existing zinc oxide voltage-sensitive ceramic cannot realize the low-voltage gradient characteristic is solved.

The invention discloses a preparation method of N-acetyl blue and application of the prepared N-acetyl blue in fabric dyeing, and relates to the technical field of compound synthesis. According to the preparation method of the N-acetyl blue, H2SO4 and aluminum chloride are adopted as a composite catalyst to catalyze N, N-dimethyl formamide; according to the present invention, the N, N '-diacetyl blue hydrolysis reaction is performed, such that the potential barrier of the N, N'-diacetyl blue hydrolysis reaction can be reduced so as to directionally remove one acetyl in the molecule to generate the N-acetyl blue, the product with the yield of more than 53% and the purity of more than 78% can be obtained by using the preparation method, and the purity and the reaction yield are excellent.

The invention belongs to the technical field of hard carbon materials, and particularly relates to a preparation method and application of a polyurethane-based hard carbon material. The preparation method comprises the following steps: carrying out roasting carbonization and post-treatment on a solid polyurethane material at 900-1400 DEG C to obtain a powdery polyurethane-based hard carbon material; the solid polyurethane material is a polyurethane product prepared from reaction raw materials including isocyanate, non-phosphorus-containing polyol and phosphorus-containing polyol through a reaction. According to the invention, the polyurethane material is prepared by adding the phosphorus-containing polyol, and the polyurethane material is applied to the field of batteries as a negative electrode raw material, so that high carbonization yield can be maintained, and excellent performances such as initial coulombic efficiency, energy density, cycle capacity retention rate and the like of the battery can be realized.

The present application proposes a process method and a laser chip for reducing ohmic contact resistance, the method comprising: growing a diffusion barrier layer on the surface of a wafer and performing an annealing treatment to form Ga vacancies in the wafer; performing photolithography on the diffusion barrier layer to form a diffusion window, and performing conductive medium diffusion to fill the Ga vacancies with the conductive medium. The process method proposed in the present application can reduce ohmic contact resistance, thereby improving product reliability and product yield.

The invention discloses a preparation method of a photoelectric device, the photoelectric device and a display device. According to the preparation method of the photoelectric device, when the electron transport layer is prepared, the photo-induced acid generator is added, then the acid is generated through illumination, and the generated acid and the inorganic semiconductor particles are subjected to ligand exchange, so that the inorganic semiconductor particles with polarity are obtained; when the functional layer is prepared from the non-polar functional layer material dispersion liquid on the electron transport layer, the electron transport layer cannot be dissolved by the non-polar solvent, so that the solubility resistance of the electron transport layer is improved, namely the solution scouring resistance of the electron transport layer is improved.

The invention discloses a segmented polycrystalline silicon deep groove silicon carbide MOSFET, and belongs to the technical field of semiconductor power devices. According to the device, a P + polycrystalline silicon section connected with a source electrode, a lightly doped Npolycrystalline silicon section and an N + polycrystalline silicon section connected with a grid electrode are sequentially arranged in a deep groove in the depth direction, and the P + polycrystalline silicon section, the lightly doped Npolycrystalline silicon section and the N + polycrystalline silicon section jointly form a polycrystalline silicon diode structure similar to a PIN. The P + polycrystalline silicon section at the bottom of the groove is used for shielding an electric field, the gate-drain coupling capacitance (Cgd) is effectively reduced, and the switching characteristic of the device is improved; meanwhile, by utilizing the characteristic that the reverse leakage current of the PIN structure is obviously increased under the short-circuit temperature rise, the self-adaptive reduction of the gate-source voltage (Vgs) is realized through gate loop resistance voltage division, so that the short-circuit current is inhibited. While voltage resistance and conduction performance of the device are ensured, short-circuit endurance capability and safe turn-off reliability of the device are remarkably improved.

This invention discloses an organic compound, its preparation method, and an organic electroluminescent device, relating to the field of luminescent materials technology. The chemical formulas I-1 and I-2 provided by this invention are fluorene compounds with a unique fluorene structure. As a light-emitting auxiliary layer in a red organic electroluminescent device, this type of compound can reduce the potential barrier between the hole transport layer and the light-emitting layer, lower the driving voltage of the organic electroluminescent device, further improve the hole transport rate and electron blocking ability, and increase the charge balance between holes and electrons within the light-emitting layer. This allows light to be formed effectively within the light-emitting layer, rather than on the surface of the hole transport layer, thereby greatly improving the device's lifetime and luminous efficiency.

This invention discloses a monolithically integrated complementary inverter for GaN HEMT and its fabrication method, relating to the field of semiconductor technology. The inverter includes an n-channel and a p-channel enhancement-mode GaN HEMT, both laterally distributed on a common epitaxial layer of the same substrate. A two-dimensional dielectric layer, a graphene layer, and an isolation dielectric layer are sequentially disposed above the epitaxial layer. The source and drain electrodes of the p-channel device are located in grooves after etching the isolation dielectric layer and the graphene layer, with the gate groove etched into the P-GaN layer. The source and drain electrodes of the n-channel device are located in grooves etched from the epitaxial layer to the bottom of the barrier layer, with the gate electrode located above the unetched P-GaN layer. Isolation between devices is achieved through isolation trenches extending into the buffer layer. By introducing a two-dimensional dielectric layer and a graphene layer, this invention induces a two-dimensional hole gas at the P-GaN interface, significantly increasing the hole carrier concentration, solving the performance bottleneck of p-channel devices, and realizing high-speed, low-power monolithically integrated complementary logic.

This application provides a semiconductor device with a silicon carbide ohmic contact and a method for fabricating the same. The semiconductor device includes: a silicon carbide substrate; a single-crystal silicon carbide epitaxial layer formed on the silicon carbide substrate; a first doped region formed downwards from the upper surface of the silicon carbide epitaxial layer; a polycrystalline silicon carbide layer covering the first doped region, wherein the first doped region and the silicon carbide layer have the same doping type, and the doping concentration of the silicon carbide layer is higher than that of the silicon carbide epitaxial layer; and an alloy metal layer covering the silicon carbide layer; wherein both the polycrystalline silicon carbide layer and the single-crystal silicon carbide epitaxial layer are made of silicon carbide, and a tunnel is formed between the polycrystalline silicon carbide layer and the alloy metal layer. This application solves the technical problem of the extremely high requirements for the fabrication process of traditional ohmic contacts.

The invention provides a droplet driving structure and a preparation method thereof, and relates to the technical field of driving structures. The liquid drop driving structure comprises a series wedge-shaped groove structure; the series wedge-shaped groove structure comprises a plurality of wedge-shaped grooves which are connected in sequence; in the driving direction of liquid drops, the narrow end of one wedge-shaped groove is connected with the wide end of the other wedge-shaped groove; the contact interface of the series wedge-shaped groove structure and the liquid drop is a wettability gradient interface, and the wettability of the contact interface of each wedge-shaped groove and the liquid drop is different, so that the liquid drop is driven to move from the narrow end of one wedge-shaped groove to the wide end of the other wedge-shaped groove. According to the invention, the potential barrier at the joint of the wedge-shaped grooves can be reduced, and continuous driving force is provided for liquid drops, so that the liquid drops move from the narrow end of one wedge-shaped groove to the wide end of the other wedge-shaped groove, the liquid drops are promoted to be better continuously transported, and long-distance continuous transportation of the liquid drops is better realized.

The invention discloses a transistor, a preparation method thereof, a semiconductor device and electronic equipment. The transistor includes a channel, a gate structure, a first pole assembly, and a second pole assembly. The gate structure includes a gate electrode. The first pole assembly and the second pole assembly are located on the two sides of the gate structure in the first direction respectively and connected with the channel. The orthographic projection of at least one of the first pole assembly and the second pole assembly on the substrate is overlapped with the orthographic projection of the channel on the first plane; or, the orthographic projection of the first pole assembly and the orthographic projection of the second pole assembly on the first plane are not overlapped with the orthographic projection of the channel on the first plane, and the two ends of the gate structure in the first direction are correspondingly flush with the two ends of the channel in the first direction. According to the transistor and the preparation method thereof, the semiconductor device and the electronic equipment, the distance between the gate electrode and the source / drain electrode can be reduced, and the electrical property of the transistor can be improved.

The invention discloses a lithium ion battery high-entropy alloy modified silicon-oxygen-carbon composite material as well as a preparation method and application thereof. The innermost layer of the composite material is a multiphase inorganic-organic SiOC material, the middle layer of the composite material is SiOC loaded with a high-entropy alloy, the composite material has a micro-mesoporous structure from inside to outside, and the outermost layer of the composite material is a high-conductivity carbon tube. The composite material prepared by the invention takes an interface as a starting point and takes layer-by-layer superposition as a path to finally generate a shell with a complete structure. By forming a high-entropy alloy modified coating layer which is internally and externally communicated on the surface of SiOC, the ion and electron conductivity can be remarkably improved, more lithium storage active points are provided, heteroatom-doped high-conductivity carbon tubes grow on the catalytic surface, the impedance of the material in the charge-discharge process is reduced, and the cycle rate performance of the material is improved.

The invention discloses a concrete setting and early strength agent, a preparation method and application thereof, and belongs to the technical field of concrete admixtures. The concrete setting and early strength agent comprises the following components in parts by weight: 5 to 10 parts of ultrafine mineral powder A, 0.5 to 5 parts of polyvinyl alcohol, 10 to 20 parts of modified ultrafine mineral powder B, 5 to 12 parts of modified white carbon black, and 40 to 80 parts of water; the preparation method of the modified ultrafine mineral powder B is as follows: the modifier is dissolved in water to prepare a modified liquid, and then a calcium hydroxide solution is added to adjust the pH value to greater than 12, and then the ultrafine mineral powder B is added, heated to 50 to 80°C, reacted for 1 to 3 hours, filtered, dried, and ground to obtain the modified ultrafine mineral powder B. The setting and early strength agent of the invention is based on ultrafine mineral powder A, and modified ultrafine mineral powder B, polyvinyl alcohol and modified white carbon black are added. The components work together to significantly improve the early strength of concrete, and also have a significant enhancement effect on the later strength, and can significantly shorten the demoulding time of concrete.

The present application relates to the technical field of carbon black production, in particular to a kind of carbon black and its production process.The present application solves the problems of large viscosity of ethylene tar, incomplete cracking, poor dispersibility and surface inertness of carbon black.First, the raw oil is treated by decalin / NMP complex solvent and ultrasonic wave, then a ferrocene / potassium borate composite catalyst is added, and the double-stage atomization technology is combined with gradient temperature field for combustion cracking;In the reaction quenching section, the modified quenching liquid containing KH-550 and urea is sprayed in the specific temperature zone for in-situ grafting, and finally the finished product is obtained by alternating speed granulation and microwave fluidized drying;The prepared carbon black has the characteristics of high structure, high yield, low impurity and high surface activity, and has high application value in the field of rubber reinforcement and high-performance composite materials.

The present invention discloses a pixel circuit for improving the signal-to-noise ratio of a high dynamic range pixel conversion node, comprising a P-type substrate, a large photodiode, a No. 1 transmission gate, a No. 1 charge-voltage conversion node, a No. 2 transmission gate, a No. 2 charge-voltage conversion node, a No. 3 transmission gate, a No. 3 charge-voltage conversion node, a No. 4 transmission gate, and a small photodiode are arranged on the P-type substrate, a No. 4 charge-voltage conversion node is arranged on the left side of the large photodiode, a charge overflow prevention transistor is connected between the No. 4 charge-voltage conversion node and the large photodiode, the No. 4 charge-voltage conversion node is grounded via a No. 2 lateral overflow integrated capacitor, and a transmission gate of overflowed charge is connected between the No. 4 charge-voltage conversion node and the No. 2 charge-voltage conversion node. The present invention significantly improves the signal-to-noise ratio when the SP1L signal is switched to the SP2H signal while ensuring that the full well capacity of the high dynamic range pixel does not change significantly, and significantly optimizes the imaging quality of the high dynamic pixel.

The present invention provides a heteroatom-containing condensed ring amine compound with a structure of formula (I). The presence of the specific luminescent auxiliary material of the present invention enables holes transferred from the anode to move smoothly to the luminescent layer, reduces the potential barrier between the hole transport layer and the luminescent layer, and reduces the driving voltage of the device; the glass transition temperature is significantly improved; the utilization rate of holes is further increased, and the luminescent efficiency and life of the device are improved.

The embodiment of the invention relates to the field of display, in particular to a composite film and a preparation method thereof, a light-emitting device and a display device, and the composite film comprises a functional layer and an interface modification layer which are sequentially stacked; the material of the functional layer comprises a first metal oxide; and the material of the interface modification layer comprises a second metal oxide and a metal chalcogenide. According to the invention, the carrier mobility is effectively improved.

The embodiment of the present invention discloses a silicon-based organic electroluminescent microdisplay and a preparation method thereof. The silicon-based organic electroluminescent microdisplay comprises: a silicon-based circuit substrate, the silicon-based circuit substrate comprises a silicon-based substrate and a driving circuit located on the silicon-based substrate; a plurality of sub-pixels, the sub-pixels are arranged on the silicon-based circuit substrate, the sub-pixels comprise a first electrode, a buffer pattern, an organic light-emitting layer and a second electrode stacked in sequence, the first electrode being electrically connected to the driving circuit; wherein the buffer pattern is formed by patterning a buffer layer, and the buffer layer is prepared using an aqueous solution of a buffer material. The embodiment of the present invention solves the problem of lateral leakage between sub-pixels in the existing silicon-based organic electroluminescent microdisplay, can avoid cross-coloring between sub-pixels, and can improve the hole injection capacity of the sub-pixels, improve the recombination efficiency of carriers, and enhance the luminous efficiency of the sub-pixels.

The invention provides an organic electroluminescent material composition and an organic electroluminescent device comprising the same, the composition comprises a first compound shown in a chemical formula I and a second compound shown in a chemical formula II, a layer where the first compound is located is tightly attached to a layer where the second compound is located, the energy level of the composition is matched, and the energy level of the composition is matched with the energy level of the second compound. The absolute value of the energy range delta HOMO is small, and the hole mobility and the interface contact condition are good; the first compound provided by the invention is used as a hole transport layer, and the second compound is used as a light-emitting auxiliary layer to be applied to the organic electroluminescent device, so that the organic electroluminescent material composition can obviously reduce the driving voltage of the organic electroluminescent device, improve the current efficiency of the organic electroluminescent device, and improve the luminous efficiency of the organic electroluminescent device. According to the organic electroluminescent material composition provided by the invention, the service life of the organic electroluminescent device is prolonged, and the threshold voltage of the organic electroluminescent device can be improved, so that the crosstalk phenomenon is effectively avoided, and the defects in the prior art are overcome. [Chemical Formula I] # imgabs0 # [Chemical Formula II] # imgabs1 #

The invention provides a perovskite solar cell, and relates to the technical field of solar cells. The transparent conducting layer is arranged on the glass substrate in the first direction; the hole transport material layer is arranged on the side, away from the glass substrate, of the transparent conducting layer in the first direction, the molecular structure of the hole transport material layer comprises a triarylamine core, each aryl group is 3, 4, 5-trimethoxyphenyl, and nitrogen atoms are substituted by-(CH2) 4-PO (OH) 2 groups; the perovskite layer is arranged on the side, away from the glass substrate, of the hole transport material layer in the first direction; the electron transport layer is arranged on one side, far away from the glass substrate, of the perovskite layer along the first direction; the buffer layer is arranged on the side, away from the glass substrate, of the electron transfer layer in the first direction; the metal electrode is arranged on the side, away from the glass substrate, of the buffer layer in the first direction; the antireflection layer is arranged on the side, away from the glass substrate, of the metal electrode in the first direction. The invention also provides a preparation method of the perovskite solar cell.

The present invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor optoelectronic device having Sp 2 The semiconductor light emitting element with a carbon-containing p-type contact layer comprises, from bottom to top, a substrate, an n-type semiconductor, a multi-quantum well, a p-type semiconductor and a p-type contact layer, wherein the p-type contact layer has a Sp 2 The carbon content is more than 30%, forming Sp 2 Carbon content p-type contact layer; by the p-type contact layer Sp 2 Carbon content increased to more than 30%, Sp 2 Carbon can form an intermediate potential barrier between the p-type contact layer and the electrode material, causing the potential barrier to drop by more than 0.6 eV, thereby reducing the contact resistance and thereby reducing the voltage of the semiconductor light-emitting element by more than 0.05 V.

The invention discloses a light-emitting device, a preparation method of the light-emitting device and electronic equipment, and the light-emitting device comprises an anode and a cathode which are oppositely arranged, a light-emitting layer arranged between the anode and the cathode, and a hole function layer arranged between the anode and the light-emitting layer, the material of the hole function layer comprises an organic hole function material and a magnetic material comprising first to Nth magnetic nanoparticles, the average particle size of the first to Nth magnetic nanoparticles is gradually increased, and N is a positive integer greater than or equal to 2; the first magnetic nano particles to the Nth magnetic nano particles in the hole function layer are sequentially arranged in the direction from the anode to the light-emitting layer, electron-hole transmission balance of the light-emitting device is promoted, and therefore the photoelectric performance of the light-emitting device is improved, and the service life of the light-emitting device is prolonged.

The application relates to low-voltage gradient zinc oxide pressure-sensitive ceramic and a preparation method and application thereof. By adjusting sintering pressure and content of a second phase, the pressure-sensitive voltage of undoped and doped pressure-sensitive ceramic can be effectively controlled, low-voltage gradient ZnO pressure-sensitive ceramic is obtained, and the problem that the existing zinc oxide pressure-sensitive ceramic cannot realize the low-voltage gradient characteristic is solved.

The invention belongs to the technical field of semiconductor material preparation and new energy, and particularly discloses flexible water photovoltaic fabric based on MXene and Al2O3 and a preparation method of the flexible water photovoltaic fabric. The flexible water photovoltaic fabric based on MXene and Al2O3 comprises a flexible cotton cloth substrate, a flexible water photovoltaic fabric layer and a flexible water photovoltaic fabric layer, the functional coating is loaded on the surface of the cotton cloth fiber and in interwoven pores; the functional coating is of a graded composite structure containing Al2O3 nano particles and MXene nano sheets; wherein the Al2O3 nanoparticles are used as a water evaporation induced charge generation source; the MXene nanosheets are mutually lapped to form a three-dimensional conductive network, and the three-dimensional conductive network is used for rapidly extracting and conducting charges generated at the interface of the Al2O3 nanoparticles. The flexible water photovoltaic fabric prepared by the invention has excellent flexibility and better current output performance.