17 results about "Photon beam" patented technology

The invention relates to the technical field of optical transmission communication, and particularly discloses a GHZ state analyzer for time window coding photon bits, which comprises an input port, cascaded time window photon beam splitters and the like, the first time window photon beam splitter is connected with two input ports, the other time window photon beam splitters are respectively connected with one input port, the (N-1) th time window photon beam splitter is connected with two time window photon bit X basis vector measuring devices, and the other time window photon beam splitters are respectively connected with one time window photon bit X basis vector measuring device; and determining a projection result of an input quantum state on a complete orthogonal basis vector formed by the generalized GHZ states according to a measurement result of the N time window photon bit X basis vector measurement device. According to the invention, projection measurement of the input time coding photon bit quantum state on two base vectors in the generalized GHZ state orthogonal complete base vectors is realized, and partial base GHZ state projection measurement is realized.

The invention discloses a multi-wavelength light-induced photoelectron charge compensation device and method for SIMS analysis, and the device comprises an adjustable wavelength light source which is used for generating light of which the wavelength is adjustable in a range from ultraviolet to visible light; the optical system is used for guiding the light generated by the adjustable wavelength light source to the surface of a sample bombarded by an SIMS primary ion beam, and ensuring that a photon beam spot is accurately overlapped with an ion beam bombarded area; and the control unit is used for dynamically adjusting the wavelength and the light intensity of the adjustable wavelength light source according to the stability of the SIMS secondary ion signal so as to optimize photoelectron emission and realize charge neutralization. The invention has the following beneficial effects: the technical scheme avoids physical damage of the electron gun to the sample and damage to the vacuum environment; the wavelength can be adjusted to cover ultraviolet light to visible light, and the device is suitable for various materials.

The invention belongs to the technical field of laser, and discloses a coherence and spectrum composite synthesis device of a two-dimensional structure, which comprises a laser sub-beam group (1), a coherence synthesis element (2), an optical conversion device (3) and a dielectric film grating (4) which are sequentially arranged along a light path direction, the laser sub-beam group (1) emits m rows * n columns of laser sub-beams to the coherent combination element (2), the laser sub-beams are combined into one row * n columns of output light beams, the output light beams are further converged to the dielectric film grating (4) through the optical conversion device (3), and finally a beam of combined light is output. According to the invention, the laser sub-beams are expanded to the arrangement of a two-dimensional structure, and a mode of coherent spectrum composite synthesis is adopted, so that compared with an existing spectrum synthesis device and method, the number of the laser sub-beams is increased, and the light beam synthesis with higher power and the miniaturization design of the synthesis device can be realized.

A manufacturing method of a large-scale integrated laser ignition nuclear fusion device is characterized in that a recording machine technology is used for manufacturing equipment capable of rapidly punching holes with different angles in a large scale, the equipment is used for punching a large number of holes capable of pointing photon beams emitted by placed lasers to the same point, and the number of the holes is determined according to ignition nuclear fusion reaction requirements; the hole diameter is determined by equipment precision and ignition nuclear fusion needs.

There is provided a lighting system for producing an output light beam irradiating plants or crops disposed in a plant growing area. The lighting system including: a circuit board having a relatively flat surface, the relatively flat surface extending along a plane, and including a first region and a second region. Solid-state light emitters are mounted in the first region and emitter drivers are mounted in the second region. The emitter drivers are substantially coplanar with the solid-state light emitters. The lighting system also includes a combining component configured to combine light sub-beams emitted by the solid-state light emitters into the output light beam, the output light beam having a combined spectral profile produced by a combination of individual spectra of the solid-state emitters.

The device includes a first X-ray source, configured to illuminating a measurement cell with a first beam of X photons; a first detector, placed opposite the first X-ray source along a first illumination axis; a second X-ray source, configured to illuminating the measurement cell with a second beam of X photons simultaneously with the first X-ray source; a second detector, placed opposite the second X-ray source along a second illumination axis; and a tray carrying the first X-ray source, the first detector, the second X-ray source, and the second detector, the tray being rotatable around the cell axis.

The present application belongs to the field of tumor treatment, and particularly relates to a multi-target ion and photon synchronous radiotherapy system, which comprises a rotating seat for driving the human body to rotate, an ion therapy module and a photon therapy module being arranged around the rotating seat; a release end of the ion therapy module is arranged towards the rotating seat, and the ion therapy module is used for outputting an ion beam to a drug-resistant tumor target area; meanwhile, a release end of the photon therapy module is arranged towards the rotating seat, and the photon therapy module is used for outputting a photon beam to a sensitive tumor target area; the rotating seat, the photon therapy module and the ion therapy module are respectively signal connected to a controller, and a treatment scheme planning module is signal connected to the controller. The present application provides a multi-target ion and photon synchronous radiotherapy system, and aims to solve the problem that the drug-resistant tumor area and the sensitive tumor area cannot be treated by the conventional means.

A microwave photon beam forming network architecture based on switch switching type optical adjustable true delay line and its phased array radar system. The architecture realizes delay difference adjustment of multiple optical signals by modulating microwave signals in the optical domain and utilizing the characteristics of multiple adjustable delay paths in a single channel switch switching type delay line, thereby supporting high precision, wideband beam forming without beam oblique view while greatly reducing the number of delay lines and delay units; through two or more levels of delay configuration, the network can flexibly meet the wideband delay compensation requirements of different array antenna units, has relatively low complexity and strong dynamic reconfigurable ability, is suitable for implementation of large-scale photon integrated chips, the number of delay lines of the application is reduced by about 50%, and no frequency dispersion is generated, which can significantly reduce the system complexity, cost and power consumption, and is especially suitable for wideband phased array systems such as millimeter wave, satellite communication and radar detection.

The application relates to the technical field of semiconductor device special equipment manufacturing, and discloses a micro-order regulation method and system based on a metastable energy window. The method emits a pulse photon beam with a specific frequency to the surface of a semiconductor target material, so that lattice atoms enter a metastable energy window; the reflection spectrum of the semiconductor target material is collected in real time during the pulse intermittent period, and lattice vibration mode features are extracted; the lattice vibration mode features are compared with preset metastable energy window boundary threshold values, the photon density and the duration of the next pulse photon beam are dynamically adjusted according to the comparison result, and lattice atoms are repaired by short-range atomic rearrangement in the metastable energy window. The scheme limits energy injection to the metastable interval, and blocks the long-range diffusion path of doped atoms.

Systems and methods for measuring an energy barrier of a transistor during fabrication of the transistor, including: determining a photocurrent of the transistor for each of a plurality of photon energies; determining an energy barrier based on a photocurrent of each of a plurality of landing energies of the charged particle beam; and determining an energy barrier of the transistor, wherein the energy barrier is a zero voltage energy barrier or a substantially near zero voltage energy barrier. The method includes irradiating the gate with a charged particle beam; irradiating the lower part of the grid electrode by using a photon beam; determining a secondary electron (SE) yield at each of the plurality of photon energies; and determining an energy barrier of the transistor.

This invention provides an optical quantum key distribution system, including a receiver. The receiver comprises a focusing secondary mirror, a deflector, a beam splitter, a single-receiver quantum key distribution device, and a Hartmann wavefront sensor. The focusing secondary mirror receives a single-photon beam carrying key information. The beam then passes sequentially through the deflector and beam splitter. The deflector adjusts the beam direction, and the beam splitter divides the beam into two paths: one path enters the single-receiver quantum key distribution device, and the other path enters the Hartmann wavefront sensor. The Hartmann wavefront sensor provides feedback on the beam spot information, which is used to adjust the focal length of the focusing secondary mirror and the position of the deflector to correct for the effects of atmospheric turbulence. The single-receiver quantum key distribution device randomly selects a pair of basis vectors to interact with the transmitter, completing the optical quantum key distribution. This system effectively receives single photons from the transmitter, improving the success rate of signal optical quantum key distribution and enhancing communication quality.

Disclosed are systems and methods for measuring vibrational spectra of living cells and conducting comparative precision noise reduction (CPNR). A system according to some embodiments can include at least one photon source configured to generate a first photon beam that passes through living objects in medium and a second photon beam that passes through a reference medium. Detectors can be configured to produce first and second analog signals representative of the vibrational spectra of the objects and the noise spectra of the reference medium. At least one analog-to-digital converter can be configured to convert the first and second analog signals into first and second digital representations. At least one processor can be configured to define one or more reference events from the second digital representation, identify one or more very similar matching events from the first digital representation, and remove matching events from the first digital representation data.

An assembly for scanning a core or rock sample is disclosed. The assembly includes a first high energy photon emitter that is configured to emit a first beam of photons at a first location on the core or rock sample and a first detector that is configured to receive photons excited by the first high energy photon emitter from the first location on the core or rock sample along a first detection axis. A first collimator surrounds the first detection axis. The first collimator is removably coupled to the assembly.

The invention relates to a device for focusing a photon beam into a material. The device comprises: means for splitting the photon beam into a plurality of component beams; means for focusing the component beams at a predetermined focal depth within the material; and means for adapting the wavefronts of the component beams based at least in part on the focal depth.

The application discloses a kind of magnetic field in photon beam reference dose magnetic field correction factor measuring device and measuring method. Wherein, the measuring device includes first electromagnet;Second electromagnet, the central axis of first electromagnet and second electromagnet coincides and exists gap between the two;Water tank, water tank is placed in gap;Ionization chamber, ionization chamber is inserted into water tank, and the central axis of ionization chamber and the central axis of first electromagnet form plane A;Photon source, photon source is located outside plane A, and photon beam formed by photon source is perpendicular to plane A.The measuring device provided by the application can realize the accurate measurement of the magnetic field correction factor of photon beam reference dose in strong external magnetic field.The application also provides a kind of measuring method of magnetic field in photon beam reference dose magnetic field correction factor.

Some embodiments of the invention provide methods that can create large area complex patterns for nanoimprint molds without or with very litter of the use of the charged beam or photon beam direct-writing of nanostructures. Some embodiments of the invention use (i) Fourier nanoimprint patterning (FNP), (ii) edge-guided nanopatterning (EGN), and (iii) nanostructure self-perfection, and their combinations.

An optical modulation electron source modulates the emission current of an electron beam emitted from a silicon-based field emitter using a photon beam source. The cathode of the field emitter includes a protrusion fabricated on a silicon substrate and having an emission tip covered by a coating. An extractor generates an electric field that attracts free electrons toward the emission tip for emission as part of the electron beam. The photon beam source generates a photon beam including photons having an energy greater than the energy band gap of silicon and includes optics that direct the photon beam onto the emission tip, where each absorbed photon generates a photoelectron that combines with the free electrons to enhance the emission current of the electron beam. A controller modulates the emission current by controlling the intensity of the photon beam applied to the emission tip. A monitor measures the electron beam and provides feedback to the controller.