263 results about "Photon energy" patented technology

The invention discloses an electronic device parasitic parameter network analysis method based on point cloud deep learning and a related device, and the method comprises the steps: obtaining physical characteristic data in a laser-induced quartz material process, and the physical characteristic data comprises laser wavelength, pulse width, photon energy and material characteristics; and inputting the physical characteristic data into the trained neural network model, and predicting the damage threshold of the laser-induced quartz material. According to the machine learning method fusing physical information, unification of data efficiency and physical consistency is achieved, prediction precision and model expandability are remarkably improved, and the method is used for accurately predicting the damage threshold value of the quartz material under the specific laser condition, so that the laser processing technology is optimized, and the processing precision and efficiency of the quartz material are improved.

The invention relates to the technical field of material detection, and discloses a material multi-modal X-ray foreign matter detection method, which comprises the following steps of: acquiring a transmission gray-scale time sequence array and a scattered photon energy spectrum distribution matrix output by a multi-modal X-ray acquisition system, generating a composite characteristic body through cross-modal characteristic interactive coding, constructing a material-contour associated nodal topology network, and obtaining a material-contour associated nodal topology network; simulating a foreign matter feature conduction path and outputting a correlation confidence value set, performing space-time dimension mapping transformation to generate a foreign matter-detection coupling prediction curved surface, calculating a sensitivity adjustment factor and generating a standardized coupling coefficient thermodynamic cloud chart, extracting a detection quantitative index set and dynamically matching the detection quantitative index set with a preset reference range; and when the indexes exceed the boundaries, generating a regulation and control scheme. According to the method, the accuracy, reliability and real-time performance of foreign matter detection are improved, and the detection requirements of complex scenes can be met.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

The invention discloses a photovoltaic-photothermal-thermoelectric coupling system capable of efficiently utilizing sunlight. The system comprises a photovoltaic power generation module, a photo-thermal module and a thermoelectric power generation module, the photovoltaic power generation module is located on the upper layer of the whole system and is composed of a light condensation layer and a photoelectric conversion layer, and the photoelectric conversion layer converts photons in solar energy into electric energy through a photovoltaic cell; the photo-thermal module captures low-energy photons in sunlight through a heat absorption material, converts photon energy which cannot be utilized by a photovoltaic cell into heat energy through infrared radiation, and provides heat energy for the thermoelectric power generation module through heat conduction; and the thermoelectric power generation module is closely connected with the photo-thermal module, absorbs heat generated by the photovoltaic power generation module and the photo-thermal module and converts the heat into electric energy, and the thermoelectric material of the thermoelectric power generation module is a magnesium-based thermoelectric material. The problems of low energy conversion efficiency and high cost in the existing photovoltaic technology can be effectively solved, the utilization rate of solar energy is improved, and the method has remarkable application value in the field of renewable energy utilization.

The invention discloses a beta < + >-gamma-gamma coincidence positron annihilation lifetime-momentum correlation spectrometer, and belongs to the technical field of nuclear detection. The spectrometer comprises a positron annihilation life detection module, a positron annihilation gamma photon energy detection module, a signal acquisition module and a control and analysis module, and the positron annihilation life detection module is used for acquiring a life part in an AMOC spectrum; the positron annihilation gamma photon energy detection module is used for acquiring a momentum part in an AMOC spectrum by detecting gamma photons generated by positron annihilation; the signal acquisition module is used for acquiring signals generated by the positron annihilation life detection module and the positron annihilation gamma photon energy detection module; the control and analysis module is used for controlling the signal acquisition module and obtaining an AMOC spectrum based on signals acquired by the signal acquisition module. According to the method, the coincidence counting rate can be effectively improved, good coincidence time resolution and extremely low source components are achieved, and the construction cost of a spectrometer can be reduced.

The invention discloses an organic light-emitting device and a light-emitting device, one side of the organic light-emitting device close to an anode is provided with two hole transport layers which are arranged according to a high-low refractive index relationship, the material of the first hole transport layer is as shown in a formula 1, and the material of the second hole transport layer is as shown in a formula 2. According to the organic light-emitting device and the light-emitting device, through matching optimization of device film layer materials and structural combination of film layers with different refractive indexes, the stability of the materials and transmission of current carriers are guaranteed, meanwhile, light field distribution is improved through optimization of an optical microcavity structure, the photon extraction efficiency of the device is improved, and the light-emitting efficiency of the device is improved. The ineffective loss of photon energy in the organic layer is reduced, so that the performance of the organic light-emitting device and the light-emitting device comprising the organic light-emitting device is improved in the aspects of light-emitting efficiency, starting voltage, light-emitting service life and the like. Formula 1 and Formula 2.

The nitride semiconductor blue laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top, and a topological photon electronic composite flat band layer is arranged between the lower limiting layer and the lower waveguide layer. The topological photon electron composite flat band layer has a refractive index coefficient distribution characteristic and a forbidden band width distribution characteristic. According to the invention, an electron energy band and a photon energy band form high-dimensional line degeneracy in a momentum space, the interaction intensity of free electrons and photons is enhanced, the phase mismatch of the free electrons and the photons is overcome, the radiation intensity of the free electrons is excited, the free electron coupling light quantum efficiency is improved, and full energy-momentum matched flat band resonance is realized. Laser far-field radiation is enhanced, and laser mode gain and optical power are improved.

The utility model discloses a hollow-core optical fiber confinement gas excitation and collection device. The device comprises a laser system, an optical focusing system, an ion separation collecting electrode, a hollow-core optical fiber and a metal steam supply system, a laser system and an optical focusing system are arranged near one end of the hollow-core optical fiber, a metal steam supply system is arranged near the other end of the hollow-core optical fiber, laser emitted by the laser system is focused on a laser incidence end face through the optical focusing system, and the metal steam supply system is connected with the metal steam incidence end face and outputs metal steam into the hollow-core optical fiber. An ion separation collecting electrode is arranged near the periphery of the laser incident end surface; during collection, the laser system emits laser, the hollow-core optical fiber serves as a working cavity, the metal steam supply system conveys metal steam, the metal steam and the laser collide with each other in the working cavity, metal atoms absorb photon energy and are excited into metal ions, and the ion separation collection electrode separates and collects the metal ions.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention discloses a back contact solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. According to the preparation method of the back contact solar cell provided by the invention, the grid line groove is formed in the first passivation layer by using the deep ultraviolet laser, and the deep ultraviolet laser has relatively high photon energy which is higher than chemical bond energy of a passivation layer material, so that chemical bonds can be broken through a photochemical effect instead of depending on a thermal effect to melt the material. The heat affected zone of deep ultraviolet laser grooving is small, generated thermal stress is small, and edge warping of the first passivation layer caused by thermal expansion difference can be restrained. The metal seed layer formed through subsequent deposition can be well attached to the inner surface of the grid line groove and the outer surface of the first passivation layer in the grid line area, the metal seed layer is good in integrity and has good adhesive force, and the manufactured back contact solar cell has good reliability and cell performance.

The invention discloses an anti-aging PE-based pressure-sensitive adhesive protective film and a preparation method thereof.The anti-aging PE-based pressure-sensitive adhesive protective film is prepared by coating one side of a PE base film with an acrylate pressure-sensitive adhesive and drying the acrylate pressure-sensitive adhesive, a PE base film molecular chain on the surface of the anti-aging PE-based pressure-sensitive adhesive protective film contains a fluorine-containing polysiloxane structure, fluorine atoms can form a protective layer on the surface, and therefore the anti-aging PE-based pressure-sensitive adhesive protective film has good anti-aging performance. The bond energy of a C-F bond is higher than the photon energy in ultraviolet rays, so that the ultraviolet rays cannot break the C-F bond, the ultraviolet ray resistant effect of the PE base film is further improved, the interpenetration of a polysiloxane chain segment can improve the thermo-oxidative aging resistant effect of the PE base film, and the polysiloxane chain segment is matched with an internal hindered phenol structure, so that the aging resistant effect of the PE base film is further improved, and the service life of the PE base film is prolonged. Meanwhile, due to the addition of the modified filler, an inorganic protective layer can be formed in the PE base film, so that ultraviolet light is prevented from entering the material, the acrylate pressure-sensitive adhesive cannot be interfered by the ultraviolet light, and the service life is prolonged.

The present invention discloses an application of an X-ray photon selector, wherein the X-ray photon selector of the present invention is used as an energy spectrometer or a monochromator; wherein the X-ray photon selector comprises a substrate, and a selection reflector located on the substrate, and the selection reflector comprises a series of alternating light-transmitting elliptical wave bands and light-impermeable elliptical wave bands; wherein the light-impermeable elliptical wave bands are regions on the substrate where quantum dot reflectors are photoetched, and the quantum dot reflectors are arranged according to a sine function or a cosine function and arranged quasi-randomly. Firstly, the present invention proposes for the first time to use the selector as an energy spectrometer or a monochromator, thereby reducing the optical elements in the spectrometer and the monochromator, promoting the lightweight of the spectrometer and the monochromator, and at the same time reducing the preparation cost of the spectrometer to a certain extent. Secondly, the selector of the present invention avoids the problems of high-order diffraction interference of traditional spectrometers and the high-order harmonic pollution of traditional monochromators; in addition, the X-ray photon selection in the present invention is also applicable to multiple photon energy regions.

The invention provides a mine sample analysis method and system based on spectrum correction, and relates to the technical field of mine component analysis. The method comprises the following steps: firstly, preprocessing a first mine sample, respectively obtaining an XRF energy spectrum and a gamma energy spectrum, then, carrying out fusion processing on the two energy spectrums to obtain a first spectrum fusion feature vector, carrying out analysis based on a machine learning model to obtain mineral combination analysis information of the first mine sample, and finally, obtaining a second spectrum fusion feature vector of the first mine sample. At least one mine sample with the similarity meeting a preset requirement is found out from historical mine sample data according to the mineral combination analysis information, the determined collection parameters of the target mine sample serve as an optimal photon energy-time parameter set, analysis processing of the first mine sample is completed, and an analysis report is formed. According to the technical scheme, the optimal analysis parameter is determined through two steps of artificial intelligence and big data screening, so that the mine analysis result is more accurate.

All X-ray computerized tomography systems that are available or proposed base their reconstructions on measurements that integrate over energy. X-ray tubes produce a broad spectrum of photon energies and a great deal of information can be derived by measuring changes in the transmitted spectrum. We show that for any material, complete energy spectral information may be summarized by a few constants which are independent of energy. A technique is presented which uses simple, low-resolution, energy spectrum measurements and conventional computerized tomography techniques to calculate these constants at every point within a cross-section of an object. For comparable accuracy, patient dose is shown to be approximately the same as that produced by conventional systems. Possible uses of energy spectral information for diagnosis are presented.

The invention relates to the field of photocatalytic organic reactions, in particular to a transition metal-based composite material for photocatalytic organic reactions and a preparation method of the transition metal-based composite material, and aims to solve the problems that an existing composite material based on transition metal functional groups is poor in light absorption effect and low in catalytic activity, and photocatalytic efficiency and photocatalytic stability are affected. And the wide application is limited. According to the preparation method, metalloporphyrin molecules with a high crosslinking degree are grafted on the surfaces of the carbon nanotubes, the number of active sites participating in a photocatalytic reaction is effectively increased, so that the photocatalytic activity is remarkably enhanced, and metalloporphyrin and the carbon nanotubes can exert unique advantages respectively and are matched with each other, so that the photocatalytic activity is improved. Through the synergistic effect of the two, photon energy can be more effectively absorbed, and generation and separation of photon-generated carriers are accelerated, so that the photocatalytic activity of the composite material is greatly improved, the efficiency and stability of a photocatalytic organic reaction can be remarkably improved, and the whole composite material is extremely excellent in the photocatalytic reaction.

The invention discloses a terahertz technology detection and identification system and method, and relates to the technical field of terahertz technology material detection.The system comprises a femtosecond laser amplifier, a strong field terahertz radiation generation assembly, an electro-optical sampling assembly and a computer, and the femtosecond laser amplifier is used for emitting femtosecond laser pulses; the strong-field terahertz radiation generation assembly is used for generating a strong-field terahertz radiation beam and combining the strong-field terahertz radiation beam with the detection laser after the strong-field terahertz radiation beam penetrates through the to-be-detected sample; the electro-optical sampling assembly is used for electro-optical sampling; and the computer judges whether the to-be-detected sample is a natural material or an artificial material. According to the invention, the self-developed strong-field terahertz time-domain spectroscopy technology is used for detection, and compared with a traditional radioactive ray detection method and weak-field terahertz radiation, the strong-field terahertz radiation has the advantages of high power, high penetrability, high signal-to-noise ratio and the like in addition to low photon energy and no damage characteristics; the subtle differences of different materials of the same material can be identified more accurately, and the accuracy of detecting and identifying the types of the materials is effectively improved.

A radiographic imaging apparatus and a radiation detector are provided, which are capable of sufficiently reducing the sensitivity difference between pixels even if the incident photon rate is high. A radiographic imaging apparatus includes: a radiation source for irradiating an object with radiation; a plurality of detection element modules each having a semiconductor layer that generates electrical charges depending on photon energy of the radiation, and a photon counting circuit for counting the electrical charges for each pixel; and a collimator that is disposed between the radiation source and the semiconductor layer, and has a plurality of walls forming a plurality of passage holes through which the radiation passes. A plurality of subpixels is formed on the semiconductor layer, and when one or more subpixels defined by the walls of the collimator are grouped as a macro pixel, a plurality of macro pixels arranged from each end of each of the detection element modules is smaller in size than a macro pixel other than the plurality of macro pixels arranged from the end of the detection element module.

An X-ray inspection apparatus includes: a transport unit configured to transport an article; an X-ray source configured to irradiate the article with X-rays; an X-ray detection unit configured to detect the X-rays using a photon counting method and to classify photon energy of the detected X-rays into two or more energy regions on the basis of a threshold value; a threshold value setting unit configured to set the threshold value; an X-ray image generation unit configured to generate two or more X-ray transmission images corresponding to the two or more energy regions on the basis of a detection result of the X-rays; and an inspection unit configured to inspect the article on the basis of the X-rays. The threshold value setting unit is configured to set the threshold value on the basis of gradations of the two or more X-ray transmission images.

The invention relates to the technical field of laser processing, and discloses a metal polymer composite material cutting process which comprises the following steps: placing a to-be-cut piece on a cutting platform; the to-be-cut piece comprises a metal layer and a polymer layer which are stacked; adjusting parameters of an output laser beam of the laser; the output wavelength lambda of the laser is controlled, so that the laser generates green laser, and the polymer layer is subjected to cold cutting; the value of the output power P and the value of the output pulse frequency f of the laser are controlled, so that the green laser is emitted in a pulse mode, and laser energy is concentrated and acts on the metal layer at intervals; according to the cutting process of the metal polymer composite material, the two-photon energy of the green laser is sufficient to reach the fracture energy of molecular bonds of the polymer layer, the polymer layer can be directly cut without reaching the melting point of the polymer layer, the energy of the pulse laser is concentrated and spaced, and the heat influence caused by cutting the metal layer is discontinuously generated; therefore, the influence on the interface of the metal layer and the polymer layer is reduced, and the cutting quality is improved.

The disclosed embodiments provide a method for fabricating a semiconductor device using gallium nitride as an epitaxial layer, comprising: depositing a laser absorption layer on a deposition surface of a substrate; patterning the laser absorption layer to form a patterned structure, and depositing a gallium nitride epitaxial layer on the patterned structure; and irradiating the laser absorption layer from the bottom surface of the substrate with a lift-off laser, such that the upper surface temperature of the irradiated area adjacent to the gallium nitride epitaxial layer is higher than the thermal decomposition temperature of gallium nitride. The laser absorption layer serves as a functional layer for absorbing the lift-off laser. Thermal decomposition of the adjacent gallium nitride epitaxial layer is achieved by heating the laser absorption layer to the thermal decomposition temperature of gallium nitride. Furthermore, the photon energy of the lift-off laser is less than the bandgap of gallium nitride. Therefore, no matter how the lift-off laser is focused, it will not be absorbed by the gallium nitride epitaxial layer, and the corresponding epitaxial layer will not generate heat.

The invention belongs to the technical field of laser imaging and stress detection, and particularly relates to a stress non-uniformity characterization method based on photocarrier radiation measurement. According to the method, a material to be measured is excited by modulation laser with photon energy larger than the forbidden bandwidth of the material to generate photocarriers, carrier radiation signals are collected through an off-axis parabolic mirror, an amplitude-frequency and / or phase-frequency curve corresponding to a single point of the material is constructed through frequency scanning, the curve difference is represented through curve integral operation, and corresponding gray-scale values are correspondingly formed. Then photocarrier radiation signals at different positions of the material are detected, gray-scale values at different positions are obtained, a complete gray-scale image is drawn, the stress distribution characteristics of the sample to be detected can be mapped through the gray-scale image, and imaging characterization of the stress distribution non-uniformity of the sample is completed.

The application provides a data correction model training and correction method for photon counting spectral CT, comprising the following steps: training a first neural network model based on a plurality of first multi-channel distorted data and a plurality of corresponding first single-channel reference data under a single set of physical parameter conditions, so that the model is trained as a first photon energy data correction model for outputting first single-channel corrected data corresponding to the first multi-channel distorted data and the corresponding first single-channel reference data; training a second neural network model based on a plurality of second multi-channel distorted data and a plurality of corresponding second single-channel reference data under a plurality of sets of physical parameter conditions and a plurality of sets of physical parameters, so that the model is trained as a second photon energy data correction model for outputting second single-channel corrected data corresponding to the second multi-channel distorted data and the corresponding second single-channel reference data and the physical parameters, and the second neural network model is formed by adding a parameter fusion network to the first neural network model in advance.

This invention provides a long-afterglow compound, system, preparation method, and application based on covalent bond coupling. The long-afterglow compound absorbs photons and transfers the absorbed photon energy within the molecule, undergoing a photochemical reaction that releases the energy as light, thus achieving afterglow luminescence. The structure of the long-afterglow compound is shown in Formula I, where X is selected from O or S; R is selected from a photosensitizer; and n is 1–15. The long-afterglow system includes a carrier medium and a long-afterglow compound, wherein the carrier medium is used to dissolve, disperse, or adsorb the long-afterglow compound. This invention can achieve near-infrared luminescence at 660 nm and 718 nm, and can be applied in fields such as bioimaging, immune detection, cell tracking, biosensing, and information encryption.

The invention relates to an EDXRF spectrum intelligent analysis method, system and device and a medium. The method comprises the following steps: acquiring a digital pulse waveform, performing multi-dimensional feature extraction on the digital pulse waveform, and generating a standardized multi-dimensional feature vector; inputting the vector into a pre-trained gradient boosting decision tree model to obtain an event classification result of the current pulse event, taking the event classification result as an event classification judgment result of a preset decision object, and associating the digital pulse waveform to obtain a structured decision object; according to an event classification judgment result in the structured decision object, performing differentiation processing to obtain an effective X-ray photon energy value; and mapping the energy value to a corresponding energy spectrum channel according to an energy-channel mapping relation, and carrying out counting accumulation to generate a high-fidelity energy spectrum. According to the method, through multi-dimensional feature extraction and pre-training model reasoning, the accuracy of pulse signal processing and the fidelity of the energy spectrum are improved, and the precision and stability of EDXRF spectrum analysis in a complex detection scene are enhanced.

Methods and systems for layer transfer preparation of a semiconductor article by laser-induced defect generation are described herein. One illustrative method is performed by positioning a laser to operate from a growth side of a semiconductor article that includes a starting substrate, a growth substrate layer deposited on the starting substrate, and an epitaxial layer deposited on the growth substrate layer, the growth side corresponding to the epitaxial layer; configuring the laser to emit light to a focal point within the growth substrate layer, the light having a photon energy less than a bandgap associated with the epitaxial layer; and operating the laser to generate a defect at the focal point within the growth substrate layer. This defect can be included in a pattern of defects induced by the laser. Corresponding methods and systems for completing the layer transfer after preparation of the semiconductor article are also disclosed.

The invention discloses a chirp photoluminescence-based semiconductor carrier lifetime imaging method, which comprises the following steps of: exciting a semiconductor by using laser which is subjected to light intensity chirp modulation and has photon energy greater than the forbidden band width of the semiconductor after collimation and beam expansion; time domain characteristics of photoluminescence image signals emitted by the generated unbalanced carriers through radiative recombination are associated with chirp parameters of excitation light and the service life of semiconductor carriers, and the time domain characteristics are sampled and shot by a CCD and transmitted to a computer; convolution is carried out on a laser modulation signal and response functions corresponding to different carrier lifetime to obtain a series of reference signals, cross-correlation operation is carried out on the reference signals and discrete time domain signals of all pixel points of the CCD in different frames, and the carrier lifetime corresponding to the reference signal with the highest correlation peak value is the measured value of the pixel point. The whole image is the quantitative spatial distribution of the carrier lifetime of the sample. The method can provide a non-contact, high-signal-to-noise-ratio, quantitative, rapid and online electrical quality imaging characterization method for a semiconductor wafer production line.

The present invention discloses a free electron laser device and imaging method for ultrafast dynamic imaging, belonging to the field of free electron laser technology. The device includes an undulator, a four-color magnetic compressor, an electron beam collector, a transmission grating and an X-ray CCD detector arranged along the path of the electron beam. The undulator has different dimensionless magnetic field parameters K, and a four-color magnetic compressor is arranged between each adjacent undulator. The electron beam collector is used to collect the electron beam, and the transmission grating performs wave splitting diffraction on the four beams of X-rays after passing through the sample, and then forms four diffraction images on the X-ray CCD detector. The beneficial effects of the present invention are as follows: the energy of the monoenergetic electron beam and the undulator parameters can be set to obtain the required X-ray photon energy, and the pulse energy can be controlled by the number of undulator modules in combination with the OK mechanism, so as to realize an "ultrafast dynamic movie" with a time resolution of picoseconds to femtoseconds, so as to be used to study the ultrafast dynamic process inside the material.

The invention discloses a photon-cured conductive adhesive as well as a preparation method and application thereof, and belongs to the field of micro-nano electronic packaging and semiconductor materials. The problems that an existing conductive adhesive is high in curing temperature, long in curing time and poor in quality are solved. Silver-coated copper powder and silver nanowires are used as conductive filler, the conductive filler is mixed with epoxy acrylate resin, an active diluent, a photoinitiator, a defoaming agent and a flatting agent, and the conductive adhesive is obtained through grinding, defoaming and photon curing. According to the invention, rapid curing of the conductive adhesive is realized by using carbon-carbon double bond groups in a matrix resin macromolecular chain under the combined action of the reactive diluent and the photoinitiator and by means of photon energy, and the conductive adhesive with low resistivity and high shear strength is obtained. When the radiation energy is 3-5.5 J.cm <-2 > and the irradiation frequency is 1-10, the conductive adhesive can be cured, the volume resistance of the conductive adhesive is 40-300 mu omega.cm, and the bonding strength is 5-7 MPa.

A semiconductor light emitting element (1) is provided with a substrate (10), a first cladding layer (30) of a first conductivity type disposed above the substrate (10), an active layer (40) disposed above the first cladding layer (30), a second cladding layer (50) of a second conductivity type different from the first conductivity type disposed above the active layer (40), and a light guide layer (60) disposed between the first cladding layer (30) and the second cladding layer (50). The peak photon energy of the photoluminescence of the active layer (40) is 0.050 eV or more higher than the peak photon energy of the laser light emitted from the semiconductor light-emitting element (1) into which the current has been injected.

The invention discloses a method and device for generating on-axis higher harmonics of circularly polarized radiation based on an undulator, and belongs to the field of synchrotron radiation and undulators. The method comprises the steps of 1, arranging a plurality of electromagnetic coils between a magnetic block of the circular polarization undulator and an electron beam vacuum tube, and 2, when the circular polarization undulator works, introducing currents with the same magnitude into all the electromagnetic coils, and enabling the polarities of the currents in the transversely adjacent electromagnetic coils to be different, a periodic additional magnetic field is generated on a central shaft of the circular polarization undulator through the electromagnetic effect of each electromagnetic coil, and higher harmonic radiation can be received on the shaft. According to the undulator, the flux of the obtainable circularly polarized radiation higher harmonics can be greatly enhanced on a shaft, and the higher harmonics of a certain specific order can be enhanced in a targeted manner, so that the coverage range of circularly polarized radiation photon energy of the undulator is greatly expanded under the condition that subsequent beam line transformation is not carried out, and the undulator has a wide application prospect. And the user experiment efficiency and the overall performance of the device are improved.