96 results about "Photon energy" patented technology

The invention discloses an organic light-emitting device and a light-emitting device, one side of the organic light-emitting device close to an anode is provided with two hole transport layers which are arranged according to a high-low refractive index relationship, the material of the first hole transport layer is as shown in a formula 1, and the material of the second hole transport layer is as shown in a formula 2. According to the organic light-emitting device and the light-emitting device, through matching optimization of device film layer materials and structural combination of film layers with different refractive indexes, the stability of the materials and transmission of current carriers are guaranteed, meanwhile, light field distribution is improved through optimization of an optical microcavity structure, the photon extraction efficiency of the device is improved, and the light-emitting efficiency of the device is improved. The ineffective loss of photon energy in the organic layer is reduced, so that the performance of the organic light-emitting device and the light-emitting device comprising the organic light-emitting device is improved in the aspects of light-emitting efficiency, starting voltage, light-emitting service life and the like. Formula 1 and Formula 2.

The utility model discloses a hollow-core optical fiber confinement gas excitation and collection device. The device comprises a laser system, an optical focusing system, an ion separation collecting electrode, a hollow-core optical fiber and a metal steam supply system, a laser system and an optical focusing system are arranged near one end of the hollow-core optical fiber, a metal steam supply system is arranged near the other end of the hollow-core optical fiber, laser emitted by the laser system is focused on a laser incidence end face through the optical focusing system, and the metal steam supply system is connected with the metal steam incidence end face and outputs metal steam into the hollow-core optical fiber. An ion separation collecting electrode is arranged near the periphery of the laser incident end surface; during collection, the laser system emits laser, the hollow-core optical fiber serves as a working cavity, the metal steam supply system conveys metal steam, the metal steam and the laser collide with each other in the working cavity, metal atoms absorb photon energy and are excited into metal ions, and the ion separation collection electrode separates and collects the metal ions.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention discloses a back contact solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. According to the preparation method of the back contact solar cell provided by the invention, the grid line groove is formed in the first passivation layer by using the deep ultraviolet laser, and the deep ultraviolet laser has relatively high photon energy which is higher than chemical bond energy of a passivation layer material, so that chemical bonds can be broken through a photochemical effect instead of depending on a thermal effect to melt the material. The heat affected zone of deep ultraviolet laser grooving is small, generated thermal stress is small, and edge warping of the first passivation layer caused by thermal expansion difference can be restrained. The metal seed layer formed through subsequent deposition can be well attached to the inner surface of the grid line groove and the outer surface of the first passivation layer in the grid line area, the metal seed layer is good in integrity and has good adhesive force, and the manufactured back contact solar cell has good reliability and cell performance.

The invention provides a mine sample analysis method and system based on spectrum correction, and relates to the technical field of mine component analysis. The method comprises the following steps: firstly, preprocessing a first mine sample, respectively obtaining an XRF energy spectrum and a gamma energy spectrum, then, carrying out fusion processing on the two energy spectrums to obtain a first spectrum fusion feature vector, carrying out analysis based on a machine learning model to obtain mineral combination analysis information of the first mine sample, and finally, obtaining a second spectrum fusion feature vector of the first mine sample. At least one mine sample with the similarity meeting a preset requirement is found out from historical mine sample data according to the mineral combination analysis information, the determined collection parameters of the target mine sample serve as an optimal photon energy-time parameter set, analysis processing of the first mine sample is completed, and an analysis report is formed. According to the technical scheme, the optimal analysis parameter is determined through two steps of artificial intelligence and big data screening, so that the mine analysis result is more accurate.

The invention belongs to the technical field of laser imaging and stress detection, and particularly relates to a stress non-uniformity characterization method based on photocarrier radiation measurement. According to the method, a material to be measured is excited by modulation laser with photon energy larger than the forbidden bandwidth of the material to generate photocarriers, carrier radiation signals are collected through an off-axis parabolic mirror, an amplitude-frequency and / or phase-frequency curve corresponding to a single point of the material is constructed through frequency scanning, the curve difference is represented through curve integral operation, and corresponding gray-scale values are correspondingly formed. Then photocarrier radiation signals at different positions of the material are detected, gray-scale values at different positions are obtained, a complete gray-scale image is drawn, the stress distribution characteristics of the sample to be detected can be mapped through the gray-scale image, and imaging characterization of the stress distribution non-uniformity of the sample is completed.

This invention provides a long-afterglow compound, system, preparation method, and application based on covalent bond coupling. The long-afterglow compound absorbs photons and transfers the absorbed photon energy within the molecule, undergoing a photochemical reaction that releases the energy as light, thus achieving afterglow luminescence. The structure of the long-afterglow compound is shown in Formula I, where X is selected from O or S; R is selected from a photosensitizer; and n is 1–15. The long-afterglow system includes a carrier medium and a long-afterglow compound, wherein the carrier medium is used to dissolve, disperse, or adsorb the long-afterglow compound. This invention can achieve near-infrared luminescence at 660 nm and 718 nm, and can be applied in fields such as bioimaging, immune detection, cell tracking, biosensing, and information encryption.

The invention relates to an EDXRF spectrum intelligent analysis method, system and device and a medium. The method comprises the following steps: acquiring a digital pulse waveform, performing multi-dimensional feature extraction on the digital pulse waveform, and generating a standardized multi-dimensional feature vector; inputting the vector into a pre-trained gradient boosting decision tree model to obtain an event classification result of the current pulse event, taking the event classification result as an event classification judgment result of a preset decision object, and associating the digital pulse waveform to obtain a structured decision object; according to an event classification judgment result in the structured decision object, performing differentiation processing to obtain an effective X-ray photon energy value; and mapping the energy value to a corresponding energy spectrum channel according to an energy-channel mapping relation, and carrying out counting accumulation to generate a high-fidelity energy spectrum. According to the method, through multi-dimensional feature extraction and pre-training model reasoning, the accuracy of pulse signal processing and the fidelity of the energy spectrum are improved, and the precision and stability of EDXRF spectrum analysis in a complex detection scene are enhanced.

Methods and systems for layer transfer preparation of a semiconductor article by laser-induced defect generation are described herein. One illustrative method is performed by positioning a laser to operate from a growth side of a semiconductor article that includes a starting substrate, a growth substrate layer deposited on the starting substrate, and an epitaxial layer deposited on the growth substrate layer, the growth side corresponding to the epitaxial layer; configuring the laser to emit light to a focal point within the growth substrate layer, the light having a photon energy less than a bandgap associated with the epitaxial layer; and operating the laser to generate a defect at the focal point within the growth substrate layer. This defect can be included in a pattern of defects induced by the laser. Corresponding methods and systems for completing the layer transfer after preparation of the semiconductor article are also disclosed.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

Disclosed is a low-dose radiation treatment system for dementia or chronic inflammation treatment based on a photon energy beam emission form, the low-dose radiation treatment system including: a low-dose radiation therapy device wherein a treatment bed where a patient receives treatment while lying down is formed on a device body and a plurality of carbon nanotube sources are installed around an inner periphery of a ring-shaped gate of the device body to form a radiation gantry so that therapeutic radiation is irradiated toward the patient's body; and a controller configured to check a patient's condition using entered patient information and to set a treatment direction, and then to perform radiation therapy by controlling an operation of the low-dose radiation therapy device, wherein pulsed beam-type carbon nanotube sources are installed around the inner periphery of the radiation gantry, and the controller controls a radiation beam irradiation time (beam on-off time) of the carbon nanotube sources and a radiation beam irradiation interval between the carbon nanotube sources to control the radiation beam irradiation interval to a cell damage repair time (DNA repair time) of being capable of repairing DNA damage in normal cells.

An ion implantation system includes a spectroscopy-based safety system for nuclear reaction detection. A spectra analysis and safety system are disclosed herein. Associated methodology for use with the system includes processing data received from photon energy resolving spectrometers in order to identify detected photon energy, and alert the operator to the same and / or shutdown the system.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

This application discloses a semiconductor defect detection device and method, relating to the field of semiconductor defect detection technology. When detecting defects in a semiconductor sample, a first light source component emits a pulsed laser with photon energy greater than the bandgap of the semiconductor sample, exciting a first photoluminescence signal. Then, while maintaining the first light source component's pulsed laser emission, a second light source component emits a continuous laser with photon energy equal to the energy interval between the energy level and valence band of the target deep-level defect within the semiconductor sample, exciting a second photoluminescence signal. Based on these two photoluminescence signals, defect information of the semiconductor sample can be obtained. A synchronous optical path calibration module is used to detect the focused spot positions of the pulsed laser and the continuous laser on the surface of the semiconductor sample in real time, ensuring that the offset between the two focused spots is less than a preset threshold. This effectively reduces detection errors caused by spot offset and improves detection accuracy.

The invention belongs to the technical field of laser, and particularly discloses a high-efficiency laser chip of a direct pumping light-emitting layer and a laser, and the laser chip comprises a substrate layer, an integrated broadband reflector, an integrated active region, a window layer and a protection layer which are sequentially arranged. The integrated broadband integrated active area comprises a plurality of active groups, each active group comprises spacing layers and light-emitting layers, and the spacing layers and the light-emitting layers are alternately arranged; after the light-emitting layer absorbs photon energy of pump light, a carrier at the top of a material valence band of the light-emitting layer is excited to a material sub-energy level of the light-emitting layer and then relaxed to the bottom of a material conduction band of the light-emitting layer, and stimulated radiative transition is generated in the light-emitting layer. According to the invention, the light-emitting layer of the active area can be directly pumped, so that the wavelength of the pumping light source required by the laser chip is close to the laser wavelength, thereby greatly improving the light-light conversion efficiency of the chip, reducing the quantum loss in the laser generation process, reducing the waste heat in the laser chip, relieving the heat effect of the laser, and improving the production efficiency of the laser chip. The output power of the laser is improved.

1. Name of the product in this design: Battery (long-lasting photon energy). 2. Intended use of this design: as a battery. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: a 3D model.

The invention belongs to the technical field of laser, and particularly discloses a low-quantum-loss laser chip and laser, and the laser chip comprises a substrate, a dual-wavelength high-reflectivity mirror, a gain region, an anti-diffusion layer and a cap layer which are sequentially arranged. The dual-wavelength high-reflectivity mirror comprises a plurality of reflection groups which are arranged in sequence, each reflection group comprises a high-refractive-index layer and a low-refractive-index layer, and the high-refractive-index layers and the low-refractive-index layers are arranged alternately; the optical thickness d light of the high refractive index layer and the low refractive index layer is equal to (lambda pump + lambda laser) / 8; the gain region comprises a plurality of gain groups which are sequentially arranged, each gain group comprises a high barrier layer and a low barrier layer, and the high barrier layers and the low barrier layers are alternately arranged. The low-potential barrier layer is directly pumped, and the required pumping photon energy is close to the laser photon energy, so that the quantum loss in the laser generation process is small, the waste heat in the chip is less, the heat effect of the laser is greatly reduced, the light-light conversion efficiency is high, and the overall output power of the laser is also greatly improved.

A power-over-fiber (PoF) system comprises a proximal laser module, a distal power module, and an optical fiber bundle. The proximal module converts electrical energy into photon energy and transmits this photon energy through the fiber bundle. The distal module converts the photon energy back into electrical energy and provides galvanically isolated power to a load. The distal module includes an energy storage device that enables the provision of high peak currents. Sensor data transmitted via communication fibers allows the proximal module to regulate the laser power and implement safety mechanisms. The system provides galvanically isolated, dynamically regulated power suitable for high-voltage applications.

The invention provides a preparation method of an X-ray shielding coating, and belongs to the technical field of shielding coatings. The preparation method comprises the following steps: dissolving a high polymer A in an organic solvent B to obtain a solution I; dissolving the Bi-based perovskite material C in an organic solvent D to obtain a solution II; and sequentially depositing the solution I and the solution II on a substrate, annealing, and repeating the deposition steps to obtain the X-ray shielding coating. According to the prepared X-ray shielding coating, when the X-ray photon energy is 100 keV or below, the shielding efficiency (the thickness is smaller than 100 microns) can reach 20% or above, the back scattering generation ratio is reduced by 50% or above compared with Pb, and particularly, the back scattering generation ratio can reach 80% or above when the angle ranges from 60 degrees to 90 degrees.

A calibration phantom is configured to be difficult to deform and easy to handle. The calibration phantom can be used in a case of acquiring calibration data of a photon-counting type detector that outputs an electrical signal corresponding to photon energy of an incident X-ray. The calibration phantom includes first base substances and a second base substance which are known substances, the second base substance having an atomic number larger than an atomic number of the first base substances and being sandwiched between the first base substances.

A power-over-fiber system includes a proximal laser module, a distal power module, and a fiber-optic cable bundle. The proximal module converts electrical energy into photon energy and transmits the photon energy through the fiber bundle. The distal module converts the photon energy into electrical energy and supplies isolated power to a load. The distal module includes a bulk energy storage device enabling delivery of high-peak currents. Sensor data transmitted through communication fibers allows the proximal module to regulate laser output and implement safety mechanisms. The system provides isolated, dynamically regulated power suitable for high-voltage applications.

According to at least one exemplary embodiment an empyreal reaper may be provided. The empyreal reaper may include a packaging, one or more mirrors contained within the packaging which concentrate photonic energy from a photonic light source into focused light, one or more gain mediums which receive, on one or more absorption faces, the photonic energy concentrated by the one or more mirrors, and / or a photoelectric material which receives photonic energy from the one or more gain mediums and converts the photonic energy into electrical energy.

To provide a new light-emitting element. To provide a light-emitting element having high luminous efficiency. To provide a light-emitting element having a high blue index (BI). To provide a light-emitting element with low power consumption.SOLUTION: A light-emitting element comprising: a first electrode; a second electrode; and an EL layer between the first electrode and the second electrode, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a transflective electrode, in the light-emitting element, the EL layer contains an emission center substance, and when the EL layer contains only one kind of emission center substance, photon energy of a peak wavelength of light emitted from the light-emitting element is designed based on an average value of photon energy of light emitted from the emission center substance in a solution state and emission edge energy on a short wavelength side of an emission spectrum of the emission center substance in the solution state.SELECTED DRAWING: Figure 1

A method for direct measurement and profiling of electromagnetic energy from a star at a known distance from the observer entails collecting photons from the star with a camera through a telescope or lens of a given aperture area up to the known full well depth of the camera's image sensor, determining the time needed to reach the sensor's full well depth, using that collection time and the sensor's bandgap and sensitivity characteristics at full well depth to calculate the energy received per second through the aperture area, determining the number of aperture areas needed to cover the surface area of a sphere with a radius equal to the star's distance, and determining the total energy output of the star by multiplying the determined electromagnetic energy received through the aperture area by the number of apertures needed.

A system for photonic sintering of a metal electrode is provided. The system includes a display. The display includes a substrate including a first side and a second side, and the display includes the metal electrode extending from the first side to the second side. The system also includes a photonic device for sintering the metal electrode. The photonic device includes a lamp configured to generate photonic energy, and the photonic device includes a mask positioned between the metal electrode and the lamp. The mask defines a slit therein, and the mask is configured to allow a portion of the photon energy from the lamp to pass through the slit toward the metal electrode.

To provide a small, easy-to-handle portable biological information observation device. [Solution] A portable bio-information observation device according to one embodiment of the present invention is a portable bio-information observation system comprising at least an irradiation device for irradiating the lymphatic system and / or blood vessels as the part to be observed with photon energy, an imaging device for imaging the visualized part to be observed, a display device, and an operation unit, wherein the system comprises a main body having the irradiation device, the imaging device, and the display device, the main body having a photon energy emission unit and an imaging unit on one side of its opposing surface, a display unit on the other side of the opposing surface, and an illumination control unit for controlling the visualization light of the illumination device, the illumination control unit controlling the irradiation device for irradiating the photon energy to have a wavelength, brightness, and brightness distribution set according to the visualization conditions of the part to be observed, based on a command from the operation unit.

The present invention relates to the field of energy and chemical engineering, and provides an anthracene-based compound, a preparation method therefor, and a use thereof as a solar thermal fuel. The anthracene-based compound of the present invention can be converted into a dimer and store light energy as chemical energy under irradiation with 365 nm ultraviolet light, and under irradiation with 254 nm ultraviolet light, undergoes a photodepolymerization reaction and releases heat, that is, an anthracene-based solar thermal fuel can store or release photothermal energy by means of a reversible photodimerization / depolymerization reaction. In addition, the anthracene-based compound also has the unique advantage of light-controlled reversible solid-liquid phase change and can realize the simultaneous storage of photon energy and phase change energy. The anthracene-based compound has a storage energy density of about 65 kJ / mol and a storage half-life of up to 60 days. The anthracene-based compound and the preparation method therefor provided by the present invention provide a new strategy for light energy storage and utilization.

The utility model discloses a heat-insulation anti-reflection functional film which comprises a base material layer, a titanium dioxide layer, an indium tin oxide layer, a base layer and an anti-reflection layer which are sequentially stacked, the refractive index of the indium tin oxide layer ranges from 1.8 to 2.0, and the refractive index of the antireflection layer ranges from 1.40 to 1.45. On one hand, the heat insulation and anti-reflection functional film can reduce external heat entering a vehicle and reduce the use energy consumption of the vehicle in daily life, the viewing of passengers to external natural landscapes can be greatly enhanced by matching with the anti-reflection coating, and due to the fact that the forbidden band width (band gap) of the ITO thin film is usually between 3.5 eV and 4.3 eV, the heat insulation and anti-reflection functional film has a good anti-reflection effect. The energy of photons in the ultraviolet light area is larger than the forbidden band width, so that photons are absorbed and electron transition is caused, the extremely low light penetration rate is shown, and therefore the skin of a user in the vehicle can be protected from being hurt by ultraviolet rays.

The invention provides an X-ray composite radiation shielding material and a preparation method and application thereof, and belongs to the technical field of radiation protection. The photoelectric effect and the scattering effect of X-rays in the material are remarkably enhanced by using high atomic number elements contained in the metal oxide, so that the transmittance of the X-rays is effectively reduced. Meanwhile, the oxide material has good chemical stability and environmental friendliness, and the toxicity and aging problems caused by a traditional lead-based shielding material can be avoided. The prepared composite radiation shielding material has the advantages of being low in cost, light in weight, easy to process, good in flexibility, non-toxic, environmentally friendly and the like, the shielding efficiency of an X-ray shielding coating reaches up to 70% or above when the X-ray photon energy is 70 kV or below, and the generated secondary reflectance can be reduced by 35-80% compared with lead.

An alternative heat source for an engine with an elongated compartment with first and second ends, a directed energy device capable of sending a pulse of photonic energy to a focal point within the first end of the compartment, an intake allowing for the entry of a gas into the elongated compartment, an exhaust allowing for the exit of the gas from the elongated compartment, and a piston capable of moving within the elongated compartment between the first and second ends. The pulse of photonic energy at the focal point heats the gas and causes a corresponding expansion of the gas in the elongated compartment, driving the piston toward the second end of the elongated compartment, where the piston movement can be translated into motive force. The same principle can work with a rotary chamber, or a dual chambered linear system.