208 results about "Photon energy" patented technology

The invention discloses an electronic device parasitic parameter network analysis method based on point cloud deep learning and a related device, and the method comprises the steps: obtaining physical characteristic data in a laser-induced quartz material process, and the physical characteristic data comprises laser wavelength, pulse width, photon energy and material characteristics; and inputting the physical characteristic data into the trained neural network model, and predicting the damage threshold of the laser-induced quartz material. According to the machine learning method fusing physical information, unification of data efficiency and physical consistency is achieved, prediction precision and model expandability are remarkably improved, and the method is used for accurately predicting the damage threshold value of the quartz material under the specific laser condition, so that the laser processing technology is optimized, and the processing precision and efficiency of the quartz material are improved.

The invention relates to the technical field of material detection, and discloses a material multi-modal X-ray foreign matter detection method, which comprises the following steps of: acquiring a transmission gray-scale time sequence array and a scattered photon energy spectrum distribution matrix output by a multi-modal X-ray acquisition system, generating a composite characteristic body through cross-modal characteristic interactive coding, constructing a material-contour associated nodal topology network, and obtaining a material-contour associated nodal topology network; simulating a foreign matter feature conduction path and outputting a correlation confidence value set, performing space-time dimension mapping transformation to generate a foreign matter-detection coupling prediction curved surface, calculating a sensitivity adjustment factor and generating a standardized coupling coefficient thermodynamic cloud chart, extracting a detection quantitative index set and dynamically matching the detection quantitative index set with a preset reference range; and when the indexes exceed the boundaries, generating a regulation and control scheme. According to the method, the accuracy, reliability and real-time performance of foreign matter detection are improved, and the detection requirements of complex scenes can be met.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

The invention discloses an organic light-emitting device and a light-emitting device, one side of the organic light-emitting device close to an anode is provided with two hole transport layers which are arranged according to a high-low refractive index relationship, the material of the first hole transport layer is as shown in a formula 1, and the material of the second hole transport layer is as shown in a formula 2. According to the organic light-emitting device and the light-emitting device, through matching optimization of device film layer materials and structural combination of film layers with different refractive indexes, the stability of the materials and transmission of current carriers are guaranteed, meanwhile, light field distribution is improved through optimization of an optical microcavity structure, the photon extraction efficiency of the device is improved, and the light-emitting efficiency of the device is improved. The ineffective loss of photon energy in the organic layer is reduced, so that the performance of the organic light-emitting device and the light-emitting device comprising the organic light-emitting device is improved in the aspects of light-emitting efficiency, starting voltage, light-emitting service life and the like. Formula 1 and Formula 2.

The utility model discloses a hollow-core optical fiber confinement gas excitation and collection device. The device comprises a laser system, an optical focusing system, an ion separation collecting electrode, a hollow-core optical fiber and a metal steam supply system, a laser system and an optical focusing system are arranged near one end of the hollow-core optical fiber, a metal steam supply system is arranged near the other end of the hollow-core optical fiber, laser emitted by the laser system is focused on a laser incidence end face through the optical focusing system, and the metal steam supply system is connected with the metal steam incidence end face and outputs metal steam into the hollow-core optical fiber. An ion separation collecting electrode is arranged near the periphery of the laser incident end surface; during collection, the laser system emits laser, the hollow-core optical fiber serves as a working cavity, the metal steam supply system conveys metal steam, the metal steam and the laser collide with each other in the working cavity, metal atoms absorb photon energy and are excited into metal ions, and the ion separation collection electrode separates and collects the metal ions.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention discloses a back contact solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of photovoltaic technology. According to the preparation method of the back contact solar cell provided by the invention, the grid line groove is formed in the first passivation layer by using the deep ultraviolet laser, and the deep ultraviolet laser has relatively high photon energy which is higher than chemical bond energy of a passivation layer material, so that chemical bonds can be broken through a photochemical effect instead of depending on a thermal effect to melt the material. The heat affected zone of deep ultraviolet laser grooving is small, generated thermal stress is small, and edge warping of the first passivation layer caused by thermal expansion difference can be restrained. The metal seed layer formed through subsequent deposition can be well attached to the inner surface of the grid line groove and the outer surface of the first passivation layer in the grid line area, the metal seed layer is good in integrity and has good adhesive force, and the manufactured back contact solar cell has good reliability and cell performance.

The invention discloses an anti-aging PE-based pressure-sensitive adhesive protective film and a preparation method thereof.The anti-aging PE-based pressure-sensitive adhesive protective film is prepared by coating one side of a PE base film with an acrylate pressure-sensitive adhesive and drying the acrylate pressure-sensitive adhesive, a PE base film molecular chain on the surface of the anti-aging PE-based pressure-sensitive adhesive protective film contains a fluorine-containing polysiloxane structure, fluorine atoms can form a protective layer on the surface, and therefore the anti-aging PE-based pressure-sensitive adhesive protective film has good anti-aging performance. The bond energy of a C-F bond is higher than the photon energy in ultraviolet rays, so that the ultraviolet rays cannot break the C-F bond, the ultraviolet ray resistant effect of the PE base film is further improved, the interpenetration of a polysiloxane chain segment can improve the thermo-oxidative aging resistant effect of the PE base film, and the polysiloxane chain segment is matched with an internal hindered phenol structure, so that the aging resistant effect of the PE base film is further improved, and the service life of the PE base film is prolonged. Meanwhile, due to the addition of the modified filler, an inorganic protective layer can be formed in the PE base film, so that ultraviolet light is prevented from entering the material, the acrylate pressure-sensitive adhesive cannot be interfered by the ultraviolet light, and the service life is prolonged.

The invention provides a mine sample analysis method and system based on spectrum correction, and relates to the technical field of mine component analysis. The method comprises the following steps: firstly, preprocessing a first mine sample, respectively obtaining an XRF energy spectrum and a gamma energy spectrum, then, carrying out fusion processing on the two energy spectrums to obtain a first spectrum fusion feature vector, carrying out analysis based on a machine learning model to obtain mineral combination analysis information of the first mine sample, and finally, obtaining a second spectrum fusion feature vector of the first mine sample. At least one mine sample with the similarity meeting a preset requirement is found out from historical mine sample data according to the mineral combination analysis information, the determined collection parameters of the target mine sample serve as an optimal photon energy-time parameter set, analysis processing of the first mine sample is completed, and an analysis report is formed. According to the technical scheme, the optimal analysis parameter is determined through two steps of artificial intelligence and big data screening, so that the mine analysis result is more accurate.

The invention discloses a terahertz technology detection and identification system and method, and relates to the technical field of terahertz technology material detection.The system comprises a femtosecond laser amplifier, a strong field terahertz radiation generation assembly, an electro-optical sampling assembly and a computer, and the femtosecond laser amplifier is used for emitting femtosecond laser pulses; the strong-field terahertz radiation generation assembly is used for generating a strong-field terahertz radiation beam and combining the strong-field terahertz radiation beam with the detection laser after the strong-field terahertz radiation beam penetrates through the to-be-detected sample; the electro-optical sampling assembly is used for electro-optical sampling; and the computer judges whether the to-be-detected sample is a natural material or an artificial material. According to the invention, the self-developed strong-field terahertz time-domain spectroscopy technology is used for detection, and compared with a traditional radioactive ray detection method and weak-field terahertz radiation, the strong-field terahertz radiation has the advantages of high power, high penetrability, high signal-to-noise ratio and the like in addition to low photon energy and no damage characteristics; the subtle differences of different materials of the same material can be identified more accurately, and the accuracy of detecting and identifying the types of the materials is effectively improved.

A radiographic imaging apparatus and a radiation detector are provided, which are capable of sufficiently reducing the sensitivity difference between pixels even if the incident photon rate is high. A radiographic imaging apparatus includes: a radiation source for irradiating an object with radiation; a plurality of detection element modules each having a semiconductor layer that generates electrical charges depending on photon energy of the radiation, and a photon counting circuit for counting the electrical charges for each pixel; and a collimator that is disposed between the radiation source and the semiconductor layer, and has a plurality of walls forming a plurality of passage holes through which the radiation passes. A plurality of subpixels is formed on the semiconductor layer, and when one or more subpixels defined by the walls of the collimator are grouped as a macro pixel, a plurality of macro pixels arranged from each end of each of the detection element modules is smaller in size than a macro pixel other than the plurality of macro pixels arranged from the end of the detection element module.

An X-ray inspection apparatus includes: a transport unit configured to transport an article; an X-ray source configured to irradiate the article with X-rays; an X-ray detection unit configured to detect the X-rays using a photon counting method and to classify photon energy of the detected X-rays into two or more energy regions on the basis of a threshold value; a threshold value setting unit configured to set the threshold value; an X-ray image generation unit configured to generate two or more X-ray transmission images corresponding to the two or more energy regions on the basis of a detection result of the X-rays; and an inspection unit configured to inspect the article on the basis of the X-rays. The threshold value setting unit is configured to set the threshold value on the basis of gradations of the two or more X-ray transmission images.

The disclosed embodiments provide a method for fabricating a semiconductor device using gallium nitride as an epitaxial layer, comprising: depositing a laser absorption layer on a deposition surface of a substrate; patterning the laser absorption layer to form a patterned structure, and depositing a gallium nitride epitaxial layer on the patterned structure; and irradiating the laser absorption layer from the bottom surface of the substrate with a lift-off laser, such that the upper surface temperature of the irradiated area adjacent to the gallium nitride epitaxial layer is higher than the thermal decomposition temperature of gallium nitride. The laser absorption layer serves as a functional layer for absorbing the lift-off laser. Thermal decomposition of the adjacent gallium nitride epitaxial layer is achieved by heating the laser absorption layer to the thermal decomposition temperature of gallium nitride. Furthermore, the photon energy of the lift-off laser is less than the bandgap of gallium nitride. Therefore, no matter how the lift-off laser is focused, it will not be absorbed by the gallium nitride epitaxial layer, and the corresponding epitaxial layer will not generate heat.

The invention belongs to the technical field of laser imaging and stress detection, and particularly relates to a stress non-uniformity characterization method based on photocarrier radiation measurement. According to the method, a material to be measured is excited by modulation laser with photon energy larger than the forbidden bandwidth of the material to generate photocarriers, carrier radiation signals are collected through an off-axis parabolic mirror, an amplitude-frequency and / or phase-frequency curve corresponding to a single point of the material is constructed through frequency scanning, the curve difference is represented through curve integral operation, and corresponding gray-scale values are correspondingly formed. Then photocarrier radiation signals at different positions of the material are detected, gray-scale values at different positions are obtained, a complete gray-scale image is drawn, the stress distribution characteristics of the sample to be detected can be mapped through the gray-scale image, and imaging characterization of the stress distribution non-uniformity of the sample is completed.

The application provides a data correction model training and correction method for photon counting spectral CT, comprising the following steps: training a first neural network model based on a plurality of first multi-channel distorted data and a plurality of corresponding first single-channel reference data under a single set of physical parameter conditions, so that the model is trained as a first photon energy data correction model for outputting first single-channel corrected data corresponding to the first multi-channel distorted data and the corresponding first single-channel reference data; training a second neural network model based on a plurality of second multi-channel distorted data and a plurality of corresponding second single-channel reference data under a plurality of sets of physical parameter conditions and a plurality of sets of physical parameters, so that the model is trained as a second photon energy data correction model for outputting second single-channel corrected data corresponding to the second multi-channel distorted data and the corresponding second single-channel reference data and the physical parameters, and the second neural network model is formed by adding a parameter fusion network to the first neural network model in advance.

This invention provides a long-afterglow compound, system, preparation method, and application based on covalent bond coupling. The long-afterglow compound absorbs photons and transfers the absorbed photon energy within the molecule, undergoing a photochemical reaction that releases the energy as light, thus achieving afterglow luminescence. The structure of the long-afterglow compound is shown in Formula I, where X is selected from O or S; R is selected from a photosensitizer; and n is 1–15. The long-afterglow system includes a carrier medium and a long-afterglow compound, wherein the carrier medium is used to dissolve, disperse, or adsorb the long-afterglow compound. This invention can achieve near-infrared luminescence at 660 nm and 718 nm, and can be applied in fields such as bioimaging, immune detection, cell tracking, biosensing, and information encryption.

The invention relates to an EDXRF spectrum intelligent analysis method, system and device and a medium. The method comprises the following steps: acquiring a digital pulse waveform, performing multi-dimensional feature extraction on the digital pulse waveform, and generating a standardized multi-dimensional feature vector; inputting the vector into a pre-trained gradient boosting decision tree model to obtain an event classification result of the current pulse event, taking the event classification result as an event classification judgment result of a preset decision object, and associating the digital pulse waveform to obtain a structured decision object; according to an event classification judgment result in the structured decision object, performing differentiation processing to obtain an effective X-ray photon energy value; and mapping the energy value to a corresponding energy spectrum channel according to an energy-channel mapping relation, and carrying out counting accumulation to generate a high-fidelity energy spectrum. According to the method, through multi-dimensional feature extraction and pre-training model reasoning, the accuracy of pulse signal processing and the fidelity of the energy spectrum are improved, and the precision and stability of EDXRF spectrum analysis in a complex detection scene are enhanced.

Methods and systems for layer transfer preparation of a semiconductor article by laser-induced defect generation are described herein. One illustrative method is performed by positioning a laser to operate from a growth side of a semiconductor article that includes a starting substrate, a growth substrate layer deposited on the starting substrate, and an epitaxial layer deposited on the growth substrate layer, the growth side corresponding to the epitaxial layer; configuring the laser to emit light to a focal point within the growth substrate layer, the light having a photon energy less than a bandgap associated with the epitaxial layer; and operating the laser to generate a defect at the focal point within the growth substrate layer. This defect can be included in a pattern of defects induced by the laser. Corresponding methods and systems for completing the layer transfer after preparation of the semiconductor article are also disclosed.

The invention discloses a photon-cured conductive adhesive as well as a preparation method and application thereof, and belongs to the field of micro-nano electronic packaging and semiconductor materials. The problems that an existing conductive adhesive is high in curing temperature, long in curing time and poor in quality are solved. Silver-coated copper powder and silver nanowires are used as conductive filler, the conductive filler is mixed with epoxy acrylate resin, an active diluent, a photoinitiator, a defoaming agent and a flatting agent, and the conductive adhesive is obtained through grinding, defoaming and photon curing. According to the invention, rapid curing of the conductive adhesive is realized by using carbon-carbon double bond groups in a matrix resin macromolecular chain under the combined action of the reactive diluent and the photoinitiator and by means of photon energy, and the conductive adhesive with low resistivity and high shear strength is obtained. When the radiation energy is 3-5.5 J.cm <-2 > and the irradiation frequency is 1-10, the conductive adhesive can be cured, the volume resistance of the conductive adhesive is 40-300 mu omega.cm, and the bonding strength is 5-7 MPa.

The application provides a semiconductor laser element with a topological phonon state layer, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer. The application is characterized in that a topological phonon state layer with a multilayer structure is arranged between the lower waveguide layer and the lower limiting layer of the semiconductor laser element, and the saturation electron drift velocity distribution characteristics, the electron affinity energy distribution characteristics and the polarized optical phonon energy distribution characteristics of each layer of the topological phonon state layer are designed, so that the topological quantum state and the topological phase change of the phonon spectrum can be adjusted, the quantum state and the lattice vibration mode can be changed, the Stokes shift loss of the difference between the photon energy of the pump light and the oscillation light can be reduced, and the thermal stress and the temperature quenching problem of the laser can be inhibited.

A transition metal dichalcogenides device includes a substrate, at least one layer of boron nitride, a tungsten diselenide monolayer positioned such that the at least one layer of boron nitride at least partially encapsulates the tungsten diselenide monolayer, and a plurality of electrodes. Each of the plurality of electrodes includes gold and few-layer graphene, and the at least one layer of boron nitride includes hexagonal few-layer boron nitride. The tungsten diselenide monolayer is configured to reveal excitons when at least one of a K valley and a K′ valley of the tungsten diselenide monolayer is exposed to excitation photon energy and an external magnetic field. The excitons are giant valley-polarized Rydberg excitons in excited states ranging from 2 s to 11 s when the external magnetic field is in the range of about −17 T to about 17 T.

Methods for characterizing semiconductor doping in wide-bandgap semiconductor samples include: measuring an initial value V0 of the surface voltage at a region on the surface of the semiconductor sample in darkness; charging the region to deep depletion in darkness by depositing a specified corona charge at the region; measuring the surface voltage value at the region in darkness after charging; and using a specific photon flux f. eff The light irradiates the charging region, and a specific photon flux f eff A photon energy above the semiconductor bandgap is used, sufficient to generate free minority carriers in the semiconductor sample, thereby causing photoneutralization of the corona charge. The relationship between the photoneutralization-induced corona charge decay and the irradiation time t at the region is monitored using non-contact time-resolved measurements of the surface voltage V(t). The monitored time-resolved surface voltage decay data V(t) is analyzed to determine the photoneutralization time constant τ. ph ; and using a specific photon flux f eff Light neutralization time constant τ ph It serves as a semiconductor doping index, and its value characterizes the semiconductor doping concentration in that region.

Disclosed is a low-dose radiation treatment system for dementia or chronic inflammation treatment based on a photon energy beam emission form, the low-dose radiation treatment system including: a low-dose radiation therapy device wherein a treatment bed where a patient receives treatment while lying down is formed on a device body and a plurality of carbon nanotube sources are installed around an inner periphery of a ring-shaped gate of the device body to form a radiation gantry so that therapeutic radiation is irradiated toward the patient's body; and a controller configured to check a patient's condition using entered patient information and to set a treatment direction, and then to perform radiation therapy by controlling an operation of the low-dose radiation therapy device, wherein pulsed beam-type carbon nanotube sources are installed around the inner periphery of the radiation gantry, and the controller controls a radiation beam irradiation time (beam on-off time) of the carbon nanotube sources and a radiation beam irradiation interval between the carbon nanotube sources to control the radiation beam irradiation interval to a cell damage repair time (DNA repair time) of being capable of repairing DNA damage in normal cells.

The application relates to a laser-regulated power device control system and method in the technical field of semiconductor control, which comprises a power semiconductor device, a laser emission unit for emitting laser to a light-transmitting irradiation area of the power semiconductor device according to temperature data of the power semiconductor or a conduction state of the power semiconductor device, wherein the laser emitted by the laser emission unit is irradiated to a drift area of the power semiconductor device after transmitting through the light-transmitting irradiation area, and an electron-hole pair is generated; and a laser control unit for controlling start-stop of the laser emission unit and laser emission power, wherein the laser emitted by the laser emission unit has photon energy for exciting carriers in the drift area, the photon energy is higher than a material band gap of the drift area in the power semiconductor device or higher than energy for exciting a defect state of the drift area material, and the problem that the prior art cannot fundamentally alleviate increase of on-resistance with temperature rise is solved.

This invention, applicable to the field of medical contrast agents, provides a method for preparing and applying ultrasmall nano-high-entropy alloys for high-energy computed tomography (CT) imaging. Using a low-temperature oil-phase strategy, the method successfully synthesizes uniformly sized, approximately 5 nm, ultrasmall nano-high-entropy alloys (HEAs) from a mixture of cetyltrimethylammonium chloride and oleylamine, with the addition of a metal source and molybdenum hexacarbonyl, at ambient pressure and temperatures not exceeding 250°C. These ultrasmall nano-HEAs can be used in high-energy CT imaging, exhibiting excellent contrast-enhanced imaging capabilities and maintaining strong X-ray attenuation across a wide range of photon energies, particularly at high photon energies. Not only does their attenuation strength surpass that of the commercial contrast agent iohexol, but they also offer a wider energy range of application, making them valuable for the noninvasive and precise detection and diagnosis of lesions.

An ion implantation system includes a spectroscopy-based safety system for nuclear reaction detection. A spectra analysis and safety system are disclosed herein. Associated methodology for use with the system includes processing data received from photon energy resolving spectrometers in order to identify detected photon energy, and alert the operator to the same and / or shutdown the system.

The present invention belongs to the field of optical communications technology, specifically a high-brightness, communication-band silicon-based luminescent film doped with a high concentration of erbium and a method for preparing the same. The present invention uses HSQ as a solvent and erbium nitrate pentahydrate as a source of erbium. Ytterbium ions and independent silicon quantum dots are co-doped, stirred, spin-coated, and subjected to high-temperature annealing to obtain a high-brightness erbium-doped silicon-based luminescent film. HSQ photoresist is used as a precursor material for the preparation of silicon nanocrystal films. After being doped with erbium and subjected to high-temperature annealing, the resulting film contains a large amount of silicon nanocrystals. The silicon nanocrystals act as sensitizers in the energy transfer process, absorbing incident photon energy and then transferring and activating erbium ions to achieve photoluminescence with a central emission wavelength of 1.54 μm. The present invention avoids the numerous defects associated with ion implantation and eliminates the need for maintaining a high vacuum. The resulting erbium-doped film has a high concentration of silicon nanocrystals, which act as erbium luminescence sensitizers, and is simple to prepare and safe to operate.

This invention discloses a rare-earth ion co-doped two-dimensional semiconductor material with optimized ratio, its preparation method, and its application, belonging to the field of two-dimensional materials technology. The material is a transition metal chalcogenide WS2 doped with Er. 3+ and Yb 3+ By adjusting the mass ratio of ErCl3 to YbCl3 in the precursor, the Er:Yb doping molar ratio was optimized to 1:4 while maintaining a constant total doping concentration. This invention employs salt-assisted chemical vapor deposition to grow centimeter-scale, uniformly thick WS2 (Er-Yb) monolayer films on sapphire substrates, achieving an overall rare earth doping concentration as high as 10.7 at%. Experiments confirm that when the Er:Yb doping ratio is optimized to 1:4, the Yb... 3+ As a sensitizer, it can effectively absorb photon energy and efficiently transfer it to Er. 3+ The activator significantly enhances energy transfer efficiency and inhibits concentration quenching, enabling the material to exhibit the best photoelectric properties under 635nm illumination.

This application discloses a semiconductor defect detection device and method, relating to the field of semiconductor defect detection technology. When detecting defects in a semiconductor sample, a first light source component emits a pulsed laser with photon energy greater than the bandgap of the semiconductor sample, exciting a first photoluminescence signal. Then, while maintaining the first light source component's pulsed laser emission, a second light source component emits a continuous laser with photon energy equal to the energy interval between the energy level and valence band of the target deep-level defect within the semiconductor sample, exciting a second photoluminescence signal. Based on these two photoluminescence signals, defect information of the semiconductor sample can be obtained. A synchronous optical path calibration module is used to detect the focused spot positions of the pulsed laser and the continuous laser on the surface of the semiconductor sample in real time, ensuring that the offset between the two focused spots is less than a preset threshold. This effectively reduces detection errors caused by spot offset and improves detection accuracy.

The invention provides a calibration device, a medical imaging system and a calibration method which can easily acquire calibration data of a photon counting detector. A calibration device for acquiring calibration data for a photon counting detector that outputs an electric signal corresponding to photon energy of incident radiation, the calibration device being provided with: a holding unit that holds a first substrate material and a second substrate material having a greater attenuation coefficient with respect to the radiation than the first substrate material; and a movement mechanism that moves the first substrate material and the second substrate material between a position within the irradiation field and a position outside the irradiation field by moving the holding unit in the body axis direction of the subject irradiated with the radiation.