207 results about "Photonics" patented technology

The invention discloses a method for realizing a multi-polarization high-numerical aperture Laplace differentiator based on a metasurface, and belongs to the technical field of micro-nano photonics, optical simulation calculation and light field regulation and control. The single-layer metasurface is composed of a cylindrical array which is made of an amorphous silicon material and has a hexagonal lattice period. Geometric parameters of a silicon cylinder are designed and selected, so that the metasurface excites resonance spectrums with large-angle dispersion capability under illumination of p polarized light and s polarized light in the same working wavelength range, and an optical transfer function required by optical Laplacian differential operation with broadband and high numerical aperture is realized in a real airspace; and Laplacian operation can be executed under non-polarized light and non-coherent light conditions. And generating a processing file of the corresponding metasurface according to the determined geometric dimension of the silicon cylinder unit. And processing the dielectric metasurface by adopting a micro-nano processing technology of electron beam etching. In a working wave band, the metasurface can directly obtain two-dimensional second-order edge contour information of a target image under various illumination conditions.

An optical demultiplexer circuit is configured to demultiplex a plurality of polarized optical signals using the same set of photonics components. A multiplexed optical signal may be split into two or more polarized optical signals, each carrying a plurality of data streams that are multiplexed onto different wavelength components. An optical resonator structure, an optical waveguide structure, and a photodetector structure of the optical demultiplexer circuit are configured to demultiplex a wavelength component from the two or more polarized optical signals, as opposed to having separate optical resonator structures for each of the two or more polarized optical signals. The two or more polarized optical signals may propagate along an optical waveguide loop in opposite directions toward the optical resonator structure and may optically couple to the waveguide structure through the optical resonator structure.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

A photonics device is described. The photonics devices include at least one electrode and a waveguide. The waveguide includes electro-optic material(s), a ridge, and a slab. A first portion of the waveguide is proximate to the electrode(s), while a second portion of the waveguide includes a bend. The ridge includes a first side and a second side opposite to the first side. Portions of the slab are proximate to the first side and the second side of the ridge in the first portion of the waveguide. A portion of the slab is omitted in the second portion of the waveguide.

A photonics device is described. The photonics device includes a device region and a coupling region. The device region has a first portion of a waveguide therein. The coupling region includes a second portion of the waveguide, at least one additional structure, and a cladding separating the additional structure(s) from the second portion of the waveguide. The cladding has a cladding index of refraction. The additional structure(s) has index(es) of refraction greater than the cladding index of refraction. The waveguide includes at least one thin film lithium-containing (TFLC) electro-optic material.

The invention relates to the field of microcavity photonics and the technical field of control, and provides a temperature locking method and device based on an optical microcavity absorption peak position, and the method comprises the steps: employing a tunable laser to output continuous light, and obtaining a transmission spectrum power curve; manually adjusting the output wavelength of the tunable laser, and recording the wavelength interval as a rough absorption peak position when a wave band with significantly reduced transmission spectrum power is detected; automatically adjusting the output wavelength of the tunable laser, and continuously scanning in the rough wavelength interval of the absorption peak position to obtain the absorption peak position; the offset between the position of the absorption peak and the position of a target absorption peak of the optical microcavity in a natural room temperature state is calculated, and the detected position of the absorption peak is stably maintained at the position of the target absorption peak by automatically heating or refrigerating the optical microcavity. Through the method, the problems of heat conduction path delay and thermal field gradient between the microcavity and the sensor are avoided, and the response speed and precision of wavelength drift compensation are improved.

The photon simulation iterative computing device comprises the following steps: outputting a first optical signal; dividing the first optical signal into a second optical signal, a third optical signal, a fourth optical signal and a fifth optical signal; modulating the power of the second optical signal according to the first modulation voltage corresponding to the original value to generate a sixth optical signal; equally dividing the sixth optical signal into a seventh optical signal and an eighth optical signal; performing photon multiplication and addition calculation on the seventh optical signal by using a second modulation voltage corresponding to the solution matrix to generate a ninth optical signal; a tenth optical signal corresponding to a proportional term is generated by using the eighth optical signal, an eleventh optical signal corresponding to an original value term is generated by using the fourth optical signal and the first modulation voltage, and a first output current is generated by performing photoelectric conversion on optical domain accumulated values of the ninth, tenth and eleventh optical signals by using the fifth optical signal; a second output current corresponding to the differential term is generated using the third optical signal and the first modulated voltage, and an output voltage corresponding to the new value is generated using the first output current and the second output current.

A method of fabricating a photonics apparatus for a composite confinement apparatus assembly is provided. The method includes segmenting a spacer substrate to form a plurality of spacer structures and bonding the plurality of spacer structures to a photonic platform substrate.

The invention discloses a two-dimensional polycrystalline selenium nanosheet and a preparation method and application thereof.The nanosheet is prepared by processing selenium nanoparticles through a hot-pressing method, the nanosheet is structurally characterized in that triangular crystal phase selenium and orthorhombic crystal phase selenium coexist, and the orthorhombic crystal phase is concentrated in the center and rich in point defects; the nanosheet can generate a plurality of ultra-narrow linewidth photoluminescence peaks from visible light to near-infrared band at room temperature, and the minimum full width at half maximum can reach 387 + / -90 [mu] eV. According to the method, local phase change is induced through thermal stress under the limitation of the substrate in the hot pressing process, and controllable construction of a polycrystalline structure is achieved. The obtained polycrystalline selenium nanosheet can be used as a high-color-purity luminescent material, is used for preparing an ultra-narrow linewidth photoelectric emitter working at room temperature, and has a wide application prospect in the fields of quantum photonics, high-resolution imaging, spectral analysis and the like.

The invention discloses a spiral structure waveguide for vortex light topological charge conversion and an implementation method thereof, and belongs to the field of optical waveguides. The circular waveguide and the spiral structure are combined, the spiral structure is used for regulating and controlling the vortex light mode according to the mode conversion matching condition, and vortex light conversion between any topological charge orders is achieved; according to the invention, complete conversion between different vortex lights is realized, two vortex light mixed beams with different proportions can be generated, and the requirements of generation and utilization of vortex lights with different orders in an integrated photonics on-chip structure are met. According to the method, the problem that topological charges cannot be freely converted among different vortex light modes in a waveguide structure is solved, the application value of the waveguide structure in the aspect of vortex light regulation and control is expanded, and the possibility is provided for an integrated photon platform to utilize vortex light topological charge degree-of-freedom coding information and process calculation tasks. According to the invention, information coding, optical communication, calculation and other applications are carried out by changing the topological charge of the vortex light.

This specification discloses an approach for tuning the local refractive index of a photonic IC system using selective waveguide ion implantation. In one approach, the method may include depositing an optical device film on a base layer, patterning the optical device film into multiple sections, and implanting ions into the first section of the multiple sections of the optical device film to tune the refractive index of the first section.

A device, method, and hybrid computing architecture for a Symbolic Photonic Logic Gate (SPLG) system that performs data processing primarily in the optical domain. The system comprises a photonic substrate, including silicon-photonics, indium phosphide, or similar optically active materials, patterned with optical waveguides and interferometric structures configured to implement logic operations through controlled optical interference, phase modulation, or non-linear optical effects. The SPLG system is configured to execute Boolean and symbolic logic functions without requiring intermediate optical-to-electrical signal conversion. In operation, information is encoded into one or more optical parameters including phase, polarization, wavelength, or amplitude, and processed within a Symbolic Optical Core optimized for linear algebraic operations such as matrix multiplication and vector transformation. The architecture further comprises an electronic control layer configured to initialize, configure, and monitor the photonic logic elements while allowing the majority of computational operations to occur within the optical domain, thereby reducing electrical interconnect congestion and resistive heating relative to fully electronic processors.

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

The invention relates to the technical field of surface plasma photonics and micro-nano optical sensing, in particular to a porous super-structure plasma sensor and a preparation method and application thereof.The porous super-structure plasma sensor comprises a substrate, and a first metal layer, a first silicon dioxide layer, a second metal layer and a second silicon dioxide layer are sequentially arranged on the substrate; a plurality of nanopore arrays are arranged on the porous superstructure plasma sensor; and the nanopore array penetrates through the first silicon dioxide layer, the second metal layer and the second silicon dioxide layer. Through the synergistic effect of a metal-medium-metal-medium (such as gold / silicon dioxide / gold / silicon dioxide) multi-layer structure and the periodic nanopore array, strong surface plasmon resonance is excited in a visible light-near infrared band, perfect combination of high absorptivity, high sensitivity and high FOM value is realized, and the sensor can be used for gas concentration change detection, and can be applied to detection of gas concentration changes. The problem that an existing plasmon sensor cannot meet the working requirement of the visible light-near infrared band is solved.

Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.

This invention proposes a velocity-controlled graphene non-reciprocal near-field thermal radiation measurement device and method, belonging to the fields of nanoscale thermal management and photonics technology. A first graphene plate and a second graphene plate are placed parallel to each other in a high-vacuum cavity, with a nanoscale vacuum gap between them. A macroscopic displacement platform is connected to the first graphene plate to control its macroscopic movement velocity along the interface direction. A precision DC power supply is connected to the second graphene plate to inject current to induce microscopic drift velocity of its internal charge carriers. A high-precision temperature sensor is in contact with both graphene plates to monitor their temperature. A near-field heat flux meter is located on the back side of the second graphene plate to measure the radiative heat flux passing through the gap. A calculation and control unit is connected to the macroscopic displacement platform, the precision DC power supply, the high-precision temperature sensor, and the near-field heat flux meter to coordinate and control the velocity parameters and collect and process heat flux data.

The invention relates to the technical field of micro-nano photonics, and discloses a PIT effect regulation and control method for a boron-ene nanobelt, and the method comprises the steps: arranging a boron-ene nanobelt module on a target substrate; wherein the boron-alkene belt module comprises a first boron-alkene nanobelt with a first length and a second boron-alkene nanobelt with a second length; the distance between the first boron alkene nanobelt and the second boron alkene nanobelt is a first distance; based on the regulation and control demand, determining a regulation and control strategy; on the basis of the regulation and control strategy, regulating and controlling target parameters of the boron-alkene belt module to obtain an adjusted boron-alkene belt module; wherein the target parameter at least comprises the distance between the first boron alkene nanobelt and the second boron alkene nanobelt; the first PIT effect parameter corresponding to the boron-ene band module is different from the second PIT effect parameter corresponding to the adjusted boron-ene band module. According to the scheme, the application scene of the boron-ene belt module can be expanded.

The invention relates to the technical field of automobile part production, and particularly discloses an intelligent active anti-fog automobile lamp system based on a nano-silver composite coating, which comprises a lamp shell, a mask, a lamp panel, an infrared LED lamp, an intelligent control unit, a temperature and humidity sensor, a nano-silver coating and a surface-mounted NTC thermistor sensor, the invention further discloses a manufacturing method of the intelligent active anti-fog vehicle lamp system based on the nano-silver composite coating, and the intelligent active anti-fog vehicle lamp system based on the nano-silver composite coating comprises three functional modules, namely a photo-thermal conversion nano-silver coating material, a light source excitation module, an infrared LED lamp and an intelligent control unit. According to the core principle, nanometer photonics, thermodynamics and an automatic control technology are deeply fused, three functional modules including a nanometer silver photothermal conversion coating material, a light source excitation module, an infrared LED lamp and an intelligent control unit are integrated inside, the manufacturing process is reasonable, the function is safe and reliable, intelligent active anti-fog of the automobile lamp is achieved, manual intervention is not needed, and durability is achieved.

An optical assembly includes a number of laser integrated circuits operative for outputting a like number of optical or laser signals. A lightwave circuit is positioned to receive the optical or laser signals and is operative to phase shift the optical or laser signals, combine the phase shifted optical or laser signals, and output the phase shifted and combined optical or laser signals. A lens is positioned to receive, focus and output the phase shifted and combined optical or laser signals output by the lightwave circuit to a core of a fiber-optic cable.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

The application discloses a kind of laser-induced covalent organic framework crystal in-situ synthesis method and application.The method is prepared by aldehyde monomer, amine monomer, organic solvent and auxiliary agent composition precursor solution, using continuous wave laser focusing on solid-liquid interface to form localized photo-thermal microreactor, using local hotspot to drive precursor dynamic co-condensation, realize the in-situ nucleation and growth of COF crystal, and obtain purified product after treatment.The application can accurately control the nucleation site, morphology, size and patterned structure of COF crystal by adjusting laser power, exposure time and scanning rate and other parameters, and the prepared COF crystal has high crystallinity and uniform element distribution, and can realize sub-micron scale patterned integration.The method does not require high temperature and high pressure and catalyst, and the reaction time is shortened to seconds, solving the defects of poor controllability, slow reaction and difficulty in micro-nano preparation of traditional synthesis method, and the product can be widely used in integrated photonics devices, micro-nano electronic devices and other fields.

The invention relates to the technical field of high-flux photonics materials, in particular to a Sb < 3 + >-doped Cs3LnCl6 zero-dimensional nanocrystal as well as a preparation method and application thereof. The chemical formula of the Sb < 3 + >-doped Cs3LnCl6 zero-dimensional nanocrystal is Cs3Ln1-xSbxCl6, x ranges from 0.005 to 0.1, Ln is selected from at least one of Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and the Sb < 3 + >-doped Cs3LnCl6 zero-dimensional nanocrystal has the chemical formula of Cs3Ln1-xSbxCl6. The material has a zero-dimensional structure of a C2 / c space group, and is composed of an isolated [BCl6] 3-octahedron and a gap Cs < + >, the zero-dimensional nanocrystal has a deep trap state of 0.6 eV to 1.2 eV. Through zero-dimensional [BCl6] 3-octahedron lattice rigidity and deep trap carrier recovery, high-temperature anti-thermal quenching can be realized without external coating, and the problem of external passivation-performance side effects of the existing material is solved.

A photonics device package is described. The photonics device package includes a thin film lithium-containing (TFLC) photonics integrated circuit (PIC) and an additional integrated circuit (IC). The TFLC PIC includes TFLC optical structures and electrodes. The TFLC structures include at least one TFLC electro-optic material. At least one of the TFLC structures includes a ridge and a slab and has a width not exceeding one micrometer. The TFLC PIC has a footprint. The TFLC structures occupy not more than fifty percent of the footprint. In addition, the TFLC structures are encapsulated in the TFLC PIC. The additional IC is mechanically coupled with the TFLC PIC after formation of the TFLC structures.

The application discloses an optical fiber device, a preparation method of the optical fiber device and a coupling device, and belongs to the technical field of micro-nano photonics. The application sequentially arranges a mode field expansion area and a phase modulation area at an exit end of an optical fiber, uses the mode field expansion area to expand a beam mode field diameter, uses a substrate film matched with the mode field expansion area in refractive index and a micro-nano unit with high refractive index to form the phase modulation area, realizes a target phase distribution based on geometric sizes and / or a rotation angle of the micro-nano unit, and then performs phase modulation and wavefront shaping on the expanded beam, so as to output a target light field such as a focused beam, a collimated beam, a Bessel beam or a Bessel beam array. The optical fiber device can realize high coupling efficiency, high alignment tolerance and multi-functional wavefront regulation at the exit end of the optical fiber, can solve the mode field mismatch problem in optical fiber-chip coupling, can reduce system complexity and realize multi-functional integration.

A method of fabricating a photonics apparatus for a composite confinement apparatus assembly is provided. The method includes segmenting a spacer substrate to form a plurality of spacer structures and bonding the plurality of spacer structures to a photonic platform substrate.

A photonics device is described. The photonics device includes a plurality of unit cells. Each of the unit cells includes a first portion of a waveguide, an electrode section proximate to the first portion of the waveguide, and an integrated circuit (IC) driver coupled to and configured to drive the electrode section. The unit cells are adjacent and distributed along a second portion of the waveguide. The waveguide includes at least one electro-optic material possessing a Pockels Effect. The waveguide is also configured to carry an optical signal. The IC driver, the electrode section, and the first portion of the waveguide for each of the unit cells are integrated into the photonics device. The unit cells are configured such that the photonics device has a 3 dB bandwidth of at least 70 GHz and the first portion of the waveguide has a length not exceeding five hundred micrometers.

A resonant photonic element includes a propagation waveguide defining a propagation direction; and a guided mode resonator comprising a periodically perturbed waveguide. The periodically perturbed waveguide is a waveguide that extends a first length in a resonator direction, the resonator direction is transverse to the propagation direction, and the periodically perturbed waveguide intersects the waveguide.

A method performed by a photonics processing system includes encoding an input vector into first optical signals; performing an optical scattering of the first optical signals to form second optical signals, the optical scattering implementing a matrix multiplication of the input vector by a quasi-random matrix; detecting at least a portion of the second optical signals representing an output vector; and encoding the second optical signals in an electrical representation of the output vector.

The application discloses a kind of high transparent rare earth nanoparticles / cage polysilsesquioxane composite photoresist and its preparation method and application, the photoresist includes the composite matrix consisting of cage polysilsesquioxane, multifunctional acrylate and photoinitiator, and the rare earth nanoparticles modified by bifunctional ligand.The bifunctional ligand anchors nanoparticles by first functional group, and forms chemical bonding with matrix by second functional group, realizes the atomic level uniform dispersion of nanoparticle.The photoresist has very high optical transparency, high-efficiency up-conversion luminescence performance and very high ultraviolet photosensitivity.Its preparation process is simple, without high-temperature expensive equipment, can be adapted to a variety of photo-curing technology realizes the integration precision forming of complex three-dimensional structure luminescence device, has wide application prospect in integrated photonics device field.