521 results about "Photonics" patented technology

Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and / or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g., a reflection loss, an absorption loss, a scattering loss, and / or a mode mismatch loss) relative to another transmissive region that is adjacent to the photodiode structure.

One embodiment provides a compressive hyperspectral imaging system. The compressive hyperspectral imaging system can include a coded aperture configured to spatially encode an optical signal associated with a scene, an integrated photonic device configured to disperse the spatially encoded optical signal, and an array of photo detectors configured to detect the dispersed and spatially encoded optical signal. The output of the array of photo detectors is used for reconstruction of a hyperspectral image corresponding to the scene.

The invention relates to an asymmetric transmission optical device, a test method and an electronic device, and belongs to the technical field of nano optics and photonics. Comprising a dielectric nano-particle array which comprises a plurality of dielectric nano-particles, and the dielectric nano-particles are periodically arranged according to a preset interval; wherein the height of the dielectric nano particles is 60 nm to 150 nm; and the dielectric substrate is arranged below the dielectric nanoparticle array. The test method comprises the following steps: establishing a periodic array model according to the optical device, and setting structural parameters of the model to obtain an optimal periodic array model; performing asymmetric transmission mechanism analysis and structural parameter analysis by using the optimal periodic array model; and according to an analysis result, obtaining an optimal structure parameter of asymmetric transmission. The problems of high loss, narrow bandwidth and polarization sensitivity are avoided, and the defects of high preparation difficulty, high cost and poor compatibility caused by a complex geometric structure or a specific material are overcome.

The invention discloses a full-automatic intelligent multifunctional high-order nonlinear fluorescence dynamics testing method and device, and relates to the field of nonlinear optics and nano photonics. An optical testing device composed of an exciting light generation module, an automatic power regulation module, an exciting light modulation module, a sample scanning module, a data acquisition and analysis module and an intelligent control module is established, and under the excitation of incident laser, based on the overall coordination of the intelligent control module, the optical testing device is established. Other modules are driven to complete the dynamic response test of a nonlinear fluorescence sample, and full-automatic intelligent, multifunctional, high-precision, simple, efficient, low-cost and universal fluorescence dynamic test analysis is realized. The problems that traditional manual operation wastes time and labor and the testing precision is low are solved. In addition, the multifunctional integration of the fluorescence response curve, the fluorescence rise time, the fluorescence lifetime and the fluorescence imaging effectively improves the test efficiency and the application scene, and greatly reduces the system cost.

The invention provides a photon parallel matrix convolution operation chip which can be applied to the technical field of integrated photonics and optical calculation. The chip is integrated by a 1 * N array waveguide grating, a 1 * 2 beam splitter array, an input matrix modulator array, two N * 1 array waveguide gratings, two 1 * N beam splitters, a weight matrix modulator array, an M * M array waveguide grating detector array and a detector array. Main functional devices are integrated in a monolithic mode, the system is compact, the complexity and power consumption of the system can be effectively reduced, and the calculation efficiency is improved.

The invention relates to an erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal as well as a preparation method and application thereof, and belongs to the field of nonlinear optical crystals. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal provided by the invention is prepared from Li2CO3, Nb2O5 and Er2O3 and / or Yb2O3 with the purity of 99.99%; wherein the atomic molar ratio of Li to Nb is 0.80-0.92, and the doping molar fraction of Er2O3, the doping molar fraction of Yb2O3 and the total doping molar fraction of Er2O3 and Yb2O3 are respectively 0.75%-1.25%. The erbium-doped, ytterbium-doped or erbium-ytterbium co-doped lithium niobate crystal prepared by the invention is high in crystallization quality, large in doping concentration, uniform and transparent as a whole and free from obvious macroscopic defects, and can be used for preparing a high-quality lithium niobate bulk material and a submicron lithium niobate film so as to further prepare high-efficiency photoelectric functional devices such as a laser, an amplifier and a detector; and a foundation is laid for development of the fields of integrated photonics and the like.

A light detection and ranging (LIDAR) system for a vehicle can include: a light source configured to output a transmit beam at a first orientation; a reflective surface configured to redirect the transmit beam from the first orientation to a second orientation; and a lens interface configured to receive the transmit beam at the first orientation and focus the transmit beam onto the reflective surface; wherein the LIDAR system emits the transmit beam at the second orientation into an environment of the LIDAR system.

A method of forming an optical device is provided that can include forming a backside reflector layer, and forming a cladding layer on the backside reflector layer. The method can further include forming a grating layer on the cladding layer, and forming a receiving reflector layer on the cladding layer. The receiving reflector layer can include an opening for receiving optical signal to at least the grating layer.

Some implementations herein provide an optical signal redirection structure. The optical signal redirection structure includes a planar silicon surface having a <110> crystal grain orientation. The optical signal redirection structure includes a dielectric region over the planar silicon surface. The optical signal redirection structure includes a mirror structure suspended in the dielectric region, where the mirror structure is approximately parallel to the planar silicon surface.

Various embodiments of the present disclosure are directed towards an integrated circuit. The integrated circuit includes a substrate having an upper face and a lower face. The upper face includes a central region and an outer sidewall that laterally surrounds the central region and that extends from the upper face to the lower face. An optical edge coupler is disposed over the upper face of the substrate and extends in a first direction from the central region toward the outer sidewall. An outer sidewall of the optical edge coupler corresponds to the outer sidewall of the substrate and has a concave surface or a convex surface.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

The invention provides a photonics beam domain receiving large-bandwidth blind source separation device and method for main lobe interference, and belongs to the technical field of wireless communication. The device comprises an optical domain multi-beam receiving module, an optical domain convolution mixing-instantaneous mixing conversion module and an optical domain instantaneous mixing blind source separation module. The optical domain multi-beam receiving module estimates an arrival angle of an antenna array element receiving signal, and the optical delay network constructs a plurality of receiving beams according to the arrival angle to realize synchronous receiving of a mixed signal; the variable optical delay array realizes delay synchronization of different receiving beams and completes conversion from optical domain convolution mixing to instantaneous mixing; and the optical domain instantaneous mixed blind source separation module completes extraction of a target signal through optical domain amplitude weighted iterative optimization. The photonics beam domain reception large-bandwidth blind source separation device and method have the advantages of being wide in working frequency band range, large in bandwidth and low in energy consumption, interference in a beam main lobe is effectively restrained, and the anti-interference capacity of a phased-array antenna is improved.

Heterogeneous photonic circuits comprise a gain section optically coupled to a photonics section. The gain section can include at least one gain waveguide which can be formed from a III-V semiconductor material to provide optical gain. The gain waveguide can be coupled to optical components in the photonics section to form an integrated pump module. The photonics section can include a light-generating photonic circuit, which can comprise at least one waveguide doped with a rare-earth ion or transition-metal ion. Output from the integrated pump module and / or the light-generating photonic circuit can be tunable. Tuning can be implemented with feedback control.

The invention discloses an 8 * 8 lithium niobate array optical switch, and belongs to the technical field of integrated photon and optical communication. Comprising twenty switch units of Mach-Zehnder interferometer structures, and each switch unit is provided with a modulation arm composed of an upper bent waveguide and a lower bent waveguide and is provided with a push-pull type loading electrode. The switch units are combined in a multi-stage array mode and are connected through crossed waveguides, and the 8 * 8 array non-blocking optical switch is formed by using twenty switch units. According to the invention, the 2 * 2 optical switch units with small size and high modulation efficiency are designed, the transverse size of a modulation arm is shortened by adopting upper and lower bent waveguides, the driving voltage is reduced by combining a push-pull electrode loading technology, and finally the high-density 8 * 8 array optical switch is constructed by twenty units. By utilizing the electro-optical effect of lithium niobate, through the optimization of a bent waveguide structure and the driving of a push-pull electrode, low-power-consumption and high-speed optical path switching is realized, and a high-integration-level routing solution is provided for a high-speed optical communication system.

A dielectric waveguide structure of a semiconductor photonics device is formed prior to formation of the semiconductor photonics components of the semiconductor photonics device. This enables high-temperature processing techniques to be used to form the dielectric waveguide structure without concern for potential damage that might otherwise be caused to the semiconductor photonics components if the dielectric waveguide were to be formed above the semiconductor photonics components. The use of the high-temperature processing techniques may enable low optical loss to be achieved for the dielectric waveguide structure in that the high-temperature processing techniques may be used to achieve a low hydrogen concentration in the dielectric waveguide structure. The low hydrogen concentration in the dielectric waveguide structure enables higher performance to be achieved for the dielectric waveguide structure, including greater operating efficiency and increased communication bandwidth.

The invention provides a metasurface-based method for performing effective phase encoding on incident light at any space angle, and belongs to the technical field of micro-nano optics and integrated photonics. According to the invention, the metasurface atomic displacement is associated with any predefined angle of the space incident light, and the gradient descent algorithm is adopted to optimize the phase matrix, so that effective phase coding in the whole angle space is realized. As a concept verification, the invention shows an omnidirectional angle multiplexing super-structure holography for any space light incidence, successfully realizes an augmented reality holographic image with as many as 22 channels, and proves that meaningful phase coding is realized by any incident angle degree of freedom, and the holographic image has the advantage of high signal-to-noise ratio. The arbitrary full-angle multiplexing holography shows good application potential in practical application aspects such as data storage, virtual / augmented reality and optical encryption.

The invention relates to a self-adaptive on-chip optical coherence beam combiner and a method thereof, and belongs to the technical field of integrated photonics and optical coherence combination. Aiming at the problems of difficult phase matching, high system complexity, insufficient stability and the like in the prior art, the invention provides an efficient solution based on an intelligent optimization algorithm and a closed-loop feedback mechanism. The optimal voltage setting is quickly found through an intelligent optimization algorithm, and accurate phase and amplitude adjustment of the multi-path input light field is realized; based on a closed-loop feedback mechanism, the phase and amplitude of the beam combining unit are monitored in real time and dynamically adjusted, and the stability and reliability of the system are ensured. The high-integration-level on-chip optical system is realized, the complexity and the operation difficulty of the system are remarkably reduced, and meanwhile, the performance of each beam combining unit is ensured to be optimal through step-by-step optimization, so that the output power of a beam combining port is maximized. The method can be applied to the fields of optical communication, optical sensing and the like, and a new solution is provided for development of the optical coherent combination technology.

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

Embodiments disclosed herein include photonics packages. In an embodiment, the photonics package comprises a substrate. In an embodiment, a first interposer is over the substrate, and a first die is on the first interposer. In an embodiment, a second interposer is over the substrate, and a second die is on the second interposer. In an embodiment, an optical bridge is between the first interposer and the second interposer.

A photonics package may include a substrate, a hanging connector, and a fast-axis collimator (“FAC”). The hanging connector is typically affixed to a side of the substrate other than the side through which a light output is emitted. The hanging connector may be L-shaped in cross-section, having a base section and an extended section projecting from the base section. The base section affixes to the substrate while the extended section affixes to the FAC, so that the FAC extends downward along the emitter surface of the substrate; a vertex of the FAC is coplanar with an emitter outputting the light output.

The invention belongs to the field of integrated photonics, and discloses a dynamic configuration device and method of an integrated optical processor chip. The configuration device comprises a signal acquisition module and a feedback configuration module, and the signal acquisition module detects an output signal of the integrated optical processor chip, processes the output signal into an electric signal and transmits the electric signal to the feedback configuration module; and the feedback configuration module processes and analyzes the electric signal based on a hybrid cooperation algorithm to generate a feedback control signal, and the feedback control signal is applied to a regulator of the integrated optical processor chip to influence the state of the regulator so as to realize dynamic configuration of the integrated optical processor chip. Compared with existing manual configuration, offline design and other methods, the method realizes real-time state mapping and dynamic configuration of the integrated optical processor chip, is a key technology for promoting practical application of the integrated optical processor chip, and is worthy of popularization and application.

An integrated photonics millimeter wave (MMW) radar communication system based on analog phase modulation scheme includes an integrated photonics MMW radar communication signal transmitter, a radar receiver, and a communication receiver. The transmitter includes a radar communication signal analog phase modulation module, an optical frequency comb (OFC) module, an electro-optic modulator (EOM), an optical shaping filter, an optical power divider, a photoelectric detector, an electric power amplifier, and a transmitting antenna that are cascaded sequentially. The radar receiver includes a radar receiving antenna, an electric low-noise amplifier (LNA), an optical phase modulator, an optical bandpass filter (BPF), a low-speed photoelectric detector, an electric low-pass filter, and a low-speed oscilloscope that are cascaded sequentially. In the communication receiver, a communication receiving antenna is sequentially cascaded with an electric LNA, a frequency mixer, and an oscilloscope, and a voltage-controlled oscillator is cascaded with a frequency multiplier and then connected to the frequency mixer.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

Improvements in and relating to Photonics An optical switch for receiving an optical signal from an optical signal source and for outputting the optical signal comprises an optical router configured for routing the optical signal conditional on the detection of a single photon. The optical router comprises and optical resonator, a first optical pathway part comprising the optical resonator, and a second optical pathway part. An optical input coupling part receives the optical signal for coupling the received optical signal into the first optical pathway part and into the second optical pathway part. An optical modulator coupled to a single-photon detector unit outputs a detection signal in response to the detection of a single photon. The optical modulator is configured, in response to the detection signal, to modulate the refractive index of the optical resonator to change an optical phase shift incurred by the optical signal upon passage through the optical resonator such that an optical interference results in a routing of the output optical signal to one of the first and second optical pathway parts selected conditional on the detection of a single photon.

According to the topological defect cavity based on the valley photonic crystal and the multi-channel logic device comprising the topological defect cavity, an edge mode, protected by topology, in the topological photonic crystal can resist the influence of backscattering, and a brand new thought is provided for solving the problem of high reflection loss of a defect cavity-waveguide direct coupling system under non-resonant frequency. The topological defect cavity is designed based on the valley photonic crystal, and compared with a traditional photonic crystal defect cavity, low reflection loss can be achieved when the topological defect cavity is directly coupled with the waveguide. Besides, the resonant frequency and mode symmetry of the topological defect cavity have flexible tunability, and the multi-channel logic device based on the topological defect cavity and the harpoon type energy beam splitter is provided by utilizing the characteristics of low reflection loss and tunable resonant frequency of the topological defect cavity. According to the logic device, the output result of the harpoon beam splitter can be reserved, meanwhile, more diversified output results are achieved, and the important application value of the topological defect cavity in the integrated micro-nano photonics is reflected.

The invention discloses an adjustable non-reciprocal wave absorber based on a graphene-Weel semimetal plasmon structure, and relates to the field of nano photonics, and the wave absorber comprises a graphene film with a certain thickness; the polymer dielectric layer is laid at the lower part of the graphene film; the germanium grating layer is arranged at the lower part of the polymer dielectric layer; the Weel semimetal layer is arranged at the lower part of the germanium grating layer; the zinc selenide dielectric layer is arranged at the lower part of the Weel semimetal layer; and the silver substrate is arranged at the bottom of the Weel semimetal layer. According to the adjustable non-reciprocal wave absorber, dynamic regulation and control of the non-reciprocal absorption coefficient can be improved by properly adjusting the Fermi level and the incident light angle of the graphene, then switching between the non-reciprocal state and the reciprocal state of a device is achieved, and the effect of enhancing the practicability of the non-reciprocal device is achieved.

The present disclosure relates to integration of integrated photonics-based optical gyroscopes and fiber-based optical gyroscopes into portable apparatuses that may include compass features. Novel small-footprint modularized fully integrated photonics optical gyroscopes are used for non-critical axes. However, for at least one critical axis, a fiber-optic gyroscope can be used to provide bias stability below 0.1° / Hr, which is directly correlated to predicting positional accuracy in the centimeter range. The positional accuracy results from the compassing ability of the gyroscope (referred to as gyrocompass) to calculate direction of heading using the earth's rotation.

Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers. An example wafer-level process fabricates running waveguides, optical routing, and direct-bonded optical interconnects for silicon photonics and optoelectronics packages when two wafers are joined.

A transceiver including an electronics integrated circuit (EIC), a photonics receiver integrated circuit (photonics RIC), a photonics transmitter integrated circuit (photonics TIC), and an interposer. The photonics RIC and TIC are each electrically coupled with the EIC. The photonics TIC is separate from the photonics RIC and includes at least one optical structure having a thin film lithium-containing (TFLC) electro-optic material. The interposer is coupled with the EIC, the photonics RIC, and the photonics TIC. The interposer is configured to route at least one of electrical or optical signals between at least two of the photonics RIC, the photonics TIC, or the EIC.

The invention discloses an integrated Brillouin narrow linewidth laser and a preparation method thereof, and belongs to the field of integrated photonics. The integrated Brillouin narrow linewidth laser is composed of two layers of silicon nitride micro-rings, a silicon oxide spacing layer is arranged between the two layers of silicon nitride micro-rings, the free spectral path of the two layers of silicon nitride micro-rings is designed to be Brillouin frequency shift, and coupling waveguides are designed beside the micro-rings. The invention also provides a corresponding preparation method, which comprises the following steps of: sequentially depositing the first silicon nitride layer, the first silicon oxide layer, the second silicon nitride layer, the second silicon oxide layer and the etching pattern on the substrate, and finally depositing silicon oxide as a protective layer. The TM mode is intensively distributed in the silicon oxide between the two layers of silicon nitride through the constraint of the two layers of silicon nitride micro-rings, the defect that the Brillouin gain of a silicon nitride material is weak is overcome, the mode size is reduced, the Brillouin threshold value is reduced, and high-efficiency output of the Brillouin narrow linewidth laser is achieved.