3244 results about "Photonics" patented technology

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

A method and an apparatus are disclosed for determining the position of a stimulus in two axes on a surface. The apparatus includes: a transparent waveguide panel with parallel top and a bottom surfaces and at least one edge that is perpendicular to the top and bottom surfaces; a light source that is directed to the edge of the waveguide to produce light that is contained within the waveguide by Total Internal Reflection and a light detector for producing an electrical signal that is representative of an image of the light emitted by the waveguide. The light detector is positioned to receive light emitted by Frustrated Total Internal Reflection from the transparent wave guide when a physical stimulus is placed in contact with the top surface of the transparent waveguide.

Arrangement (10) for measuring the distance to an object, comprising: a photonic source for illuminating said object using a continuous modulated photonic wave, a solid-state image sensor, comprising an array of avalanche photodiodes and a plurality of circuits for processing signals output by said avalanche photodiodes to yield data depending on the photonic wave reflected by said object onto said photodiodes. The circuit may comprise a multiplexer at the pixel level arranged so as to accumulate the signal output by the avalanche photodiode during different sub-periods in different storage devices.

A light emitting device and method for fabricating the device utilizes a layer of photonic crystals and a region of diffusing material to enhance the light output of the device. The layer of photonic crystals is positioned over a light source, such as a light emitting diode die, and the region of diffusing material is positioned over the layer of photonic layer.

Nanostructured photonic materials, and associated components for use in devices and systems operating at ultraviolet (UV), extreme ultraviolet (EUV), and / or soft Xray wavelengths are described. Such a material may be fabricated with nanoscale features tailored for a selected wavelength range, such as at particular UV, EUV, or soft Xray wavelengths or wavelength ranges. Such a material may be used to make components such as mirrors, lenses or other optics, panels, lightsources, masks, photoresists, or other components for use in applications such as lithography, wafer patterning, astronomical and space applications, biomedical applications, biotech or other applications.

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps.

Filtering of optical fibers and other related devices. High-energy methods for depositing thin films directly onto the ends of optical fibers can be used to produce high-quality, high-performance filters in quantity at a reasonable cost. These high-quality filters provide the high performance needed for many demanding applications and often eliminate the need for filters applied to wafers or expanded-beam filtering techniques. Having high-quality filters applied directly to optical fiber and faces permits production of high-performance, micro-sized devices that incorporate optical filters. Devices in which these filters may be used include spectroscopic applications including those using fiber optic probes, wavelength division multiplexing, telecommunications, general fiber optic sensor usage, photonic computing, photonic amplifiers, pump blocking and a variety of laser devices.

On-chip multispectral imaging and data management is provided in the form of an Adaptive Focal Plane Array (AFPA) that is capable of spectral tunability at the pixel level. Layers of photonic crystals are registered with pixels of a broadband focal plane array. Spectral tuning is accomplished by switching the photonic crystal layers on / off and / or by changing their material structure to tune their photonic band gaps and provide a passband for incident photons. The photonic crystal layers are preferably segmented to independently address different regions or “cells” of pixels down to a pixel-by-pixel resolution. The AFPA may simultaneously sense different regions of a scene at different spectral wavelengths, spatial resolutions and sensitivities.

A method and system for routing high-speed data to and from SANs (Storage Area Networks and Server Area Networks) via optical burst-switched (OBS) networks. OBS network components, including edge nodes and switching nodes, are coupled between SAN islands. In one embodiment, the OBS network comprises a photonic burst-switched (PBS) network. Under one scheme, a PBS edge node and SAN gateway are co-located at the interface to the SAN, while a plurality of PBS switching nodes are deployed between the PBS edge nodes. Under another scheme, PBS switching / edge nodes are co-located at respective SANs. This scheme employs an external gateway protocol (EGP) for routing data via selected route segments. Data going to and received from a SAN is packaged as Fibre Channel Frames. Data transmitted via the PBS network is converted into PBS frames having encapsulated Fibre Channel Frames. The schemes also support interfaces with legacy networks, such as LANs and WANs.

The method of vascular treatment for restenosis or vulnerable plaque after an invasive procedure, such as for example angioplasty, stenting with or without drug coating, or drug delivery, comprises: inserting a catheter or hollow guide wire to the treatment location; delivering light through the catheter in the wavelength range of about 700–2500 nm; and moving the light to treat the affected region.

The present invention provides a system and method for generating light using light-emitting elements and detecting the intensity and spectral power distribution of light using the same light-emitting elements as spectrally sensitive photodetectors. The light-emitting elements function in two modes, an ON mode and an OFF mode, wherein in the ON mode the light-emitting elements are activated and emit light of a particular frequency or range of frequencies. When in the OFF mode, the light-emitting elements are deactivated, wherein they do not emit light but serve to detect photons incident upon them thus generating an electrical signal representative of the intensity and spectral power distribution of the incident photons. The detected signal from the deactivated light-emitting elements can be used to provide photonic feedback to a lighting system, and thereby may be used to control the brightness and color balance of the lighting system. In addition, the light-emitting elements may be arranged such that no spectrally selective filters or optics are necessary to block or focus light onto the light-emitting elements when in the detection or OFF mode.

A long range, periodically ordered array of discrete nano-features (10), such as nano-islands, nano-particles, nano-wires, non-tubes, nano-pores, nano-composition-variations, and nano-device-components, are fabricated by propagation of a self-assembling array or nucleation and growth of periodically aligned nano-features. The propagation may be induced by a laterally or circularly moving heat source, a stationary heat source arranged at an edge of the material to be patterned (12), or a series of sequentially activated heaters or electrodes. Advantageously, the long-range periodic array of nano-features (10) may be utilized as a nano-mask or nano-implant master pattern for nano-fabrication of other nano-structures. In addition, the inventive long-range, periodically ordered arrays of nano-features are useful in a variety of nanoscale applications such as addressable memories or logic devices, ultra-high-density magnetic recording media, magnetic sensors, photonic devices, quantum computing devices, quantum luminescent devices, and efficient catalytic devices.

The present invention provides a system and method for generating light using light-emitting elements and detecting the intensity and spectral power distribution of light using the same light-emitting elements as spectrally sensitive photodetectors. The light-emitting elements function in two modes, an ON mode and an OFF mode, wherein in the ON mode the light-emitting elements are activated and emit light of a particular frequency or range of frequencies. When in the OFF mode, the light-emitting elements are deactivated, wherein they do not emit light but serve to detect photons incident upon them thus generating an electrical signal representative of the intensity and spectral power distribution of the incident photons. The detected signal from the deactivated light-emitting elements can be used to provide photonic feedback to a lighting system, and thereby may be used to control the brightness and colour balance of the lighting system. In addition, the light-emitting elements may be arranged such that no spectrally selective filters or optics are necessary to block or focus light onto the light-emitting elements when in the detection or OFF mode.

Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on / off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on / off duty cycles of their respective laser diodes.

A CMOS compatible ten-gigabit-per-second region nano-waveguide included photonic communication link apparatus of low energy use per transmitted bit. An embodiment of the link includes an electrically pumped laser, an electro absorption modulator and a photodetector for the 1.5 to 2.0 micrometer infrared spectral region; omission of the separate electro absorption modulator is additionally disclosed. Each of these three nano-scale elements preferably includes active semiconductor crystal material situated in a preferably Silicon resonator within a nano-strip waveguide. The resonator is defined by dispersed resonator mirrors having tapered separation distance one dimensional photonic crystal lattice apertures of oxide holes or slots. Each of the three devices may be a semiconductor heterodiode pumped or controlled by laterally disposed wings enclosing the resonator to form a lateral PIN heterodiode for current injection or high E-field generation depending on bias and composition conditions selected.

PCT No. PCT / GB97 / 00817 Sec. 371 Date Apr. 13, 1998 Sec. 102(e) Date Apr. 13, 1998 PCT Filed Mar. 24, 1997 PCT Pub. No. WO97 / 36198 PCT Pub. Date Oct. 2, 1997An optical diffraction grating is formed from a region of photonic crystalline material Light is coupled into the photonic crystalline material, and the grazingly emergent output beam is collected. The photonic crystalline material may include an array of holes formed in a substrate of dielectric material, e.g., InP, and integrated with planar waveguide structures.

A ultra high speed photonic Analog to Digital Converted (ADC) for sampling and quantizing an electrical voltage signal, internally enabled by photonics uses coherent optical detection architectures for photonic quantization. Coherent light is phase modulated by the test signal. Using an interferometer, or an array of interferometers the phase of modulated light is compared with a reference light. Flash ADC, successive approximation ADC and delta-sigma ADC configurations are presented.

A photonic structure for “white” light generation by phosphors under the excitation of a LED. The photonic structure mounts the LED and an optically transparent nanocomposite matrix having dispersed therein phosphors which will emit light under the excitation of the radiation of the LED. The phosphors dispersed in the matrix may be nanocrystalline, or larger sized with the addition of non light emitting, non light scattering nanoparticles dispersed within the matrix material so as to match the index of refraction of the matrix material to that of the phosphors. The nanocomposite matrix material may be readily formed by molding and formed into a variety of shapes including lenses for focusing the emitted light. A large number of the photonic structures may be arranged on a substrate to provide even illumination or other purposes.

A hybrid integrated optical device includes a substrate comprising a silicon layer and a compound semiconductor device bonded to the silicon layer. The device also includes a bonding region disposed between the silicon layer and the compound semiconductor device. The bonding region includes a metal-semiconductor bond at a first portion of the bonding region. The metal-semiconductor bond includes a first pad bonded to the silicon layer, a bonding metal bonded to the first pad, and a second pad bonded to the bonding metal and the compound semiconductor device. The bonding region also includes an interface assisted bond at a second portion of the bonding region. The interface assisted bond includes an interface layer positioned between the silicon layer and the compound semiconductor device, wherein the interface assisted bond provides an ohmic contact between the silicon layer and the compound semiconductor device.

Methods, and structures formed thereby, are disclosed for forming laterally grown structures with nanoscale dimensions from nanoscale arrays which can be patterned from nanoscale lithography. The structures and methods disclosed herein have applications with electronic, photonic, molecular electronic, spintronic, microfluidic or nano-mechanical (NEMS) technologies. The spacing between laterally grown structures can be a nanoscale measurement, for example with a spacing distance which can be approximately 1-50 nm, and more particularly can be from approximately 3-5 nm. This spacing is appropriate for integration of molecular electronic devices. The pitch between posts can be less than the average distance characteristic between dislocation defects for example in GaN (ρ=1010 / cm2→d=0.1 μm) resulting an overall reduction in defect density. Large-scale integration of nanoscale devices can be achieved using lithographic equipment that is orders of magnitude less expensive that that used for advanced lithographic techniques, such as electron beam lithography.

A method and architecture for secure transmission of data within optical-switched networks. In one embodiment, the optical switched network comprises a photonic burst-switched (PBS) network. Under various schemes, security keys including encryption and decryption keys are generated by edge nodes and the decryption keys are distributed to other edge nodes in a PBS network. In one embodiment, the security keys are dynamically generated by a trusted platform module (TPM). A source edge node uses its encryption key to encrypt selected data bursts to be sent to a destination edge node via a virtual lightpath coupling the source and destination edge nodes. Security data are embedded in a control burst header indicates to the destination node whether corresponding data bursts sent via the virtual lightpath are encrypted. The security data also includes the decryption key and may also identify an encryption / decryption algorithm to be used. In some embodiments, public key infrastructure facilities are used in conjunction with employment of private and public keys and digital certificates.

A method and system for wireless communication with a mobile device. A first wireless communication network, such as a WiMax or cellular-based network, has a first maximum wireless speed. A second wireless communication network, such as a near-photonic speed gigabit link (“GiLink”) network, has a second maximum wireless speed. The second wireless maximum speed is less than the first maximum wireless speed. The second wireless communication network provides control plane services for wireless communication between the mobile device and the first wireless communication network.

Disclosed are process enhancements to fully integrate the processing of a photonics device into a CMOS manufacturing process flow. A CMOS wafer may be divided into different portions. One of the portions is for the CMOS devices and one or more other portions are for the photonics devices. The photonics devices include a ridged waveguide and a germanium photodetector. The germanium photodetector may utilize a seeded crystallization from melt process so there is more flexibility in the processing of the germanium photodetector.

A light emitting structure includes a semiconductor light emitting device capable of emitting first light having a first peak wavelength, a luminescent material capable of emitting second light having a second peak wavelength disposed over the semiconductor light emitting device, and a photonic band gap material disposed between the light emitting device and the luminescent material. The photonic band gap material is capable of transmitting the first light and reflecting the second light, regardless of the angle of incidence of the first and second light.