418 results about "Photonics" patented technology

Some implementations described herein provide techniques and apparatuses provide a semiconductor device including a photonics device having a backside transmissive region and methods of manufacturing. The semiconductor device includes a first semiconductor device stacked over a second semiconductor device, where the first semiconductor device includes a photodiode structure and the second semiconductor device includes the backside transmissive region. The backside transmissive region, which is below the photodiode structure of the first semiconductor device, includes a trench structure having highly reflective structures and / or properties to maintain an optical power of light waves propagating through the backside transmissive region. An absence of structures within the trench structure lessens a likelihood of interferences which may cause a transmission loss (e.g., a reflection loss, an absorption loss, a scattering loss, and / or a mode mismatch loss) relative to another transmissive region that is adjacent to the photodiode structure.

The invention relates to an asymmetric transmission optical device, a test method and an electronic device, and belongs to the technical field of nano optics and photonics. Comprising a dielectric nano-particle array which comprises a plurality of dielectric nano-particles, and the dielectric nano-particles are periodically arranged according to a preset interval; wherein the height of the dielectric nano particles is 60 nm to 150 nm; and the dielectric substrate is arranged below the dielectric nanoparticle array. The test method comprises the following steps: establishing a periodic array model according to the optical device, and setting structural parameters of the model to obtain an optimal periodic array model; performing asymmetric transmission mechanism analysis and structural parameter analysis by using the optimal periodic array model; and according to an analysis result, obtaining an optimal structure parameter of asymmetric transmission. The problems of high loss, narrow bandwidth and polarization sensitivity are avoided, and the defects of high preparation difficulty, high cost and poor compatibility caused by a complex geometric structure or a specific material are overcome.

The invention provides a photon parallel matrix convolution operation chip which can be applied to the technical field of integrated photonics and optical calculation. The chip is integrated by a 1 * N array waveguide grating, a 1 * 2 beam splitter array, an input matrix modulator array, two N * 1 array waveguide gratings, two 1 * N beam splitters, a weight matrix modulator array, an M * M array waveguide grating detector array and a detector array. Main functional devices are integrated in a monolithic mode, the system is compact, the complexity and power consumption of the system can be effectively reduced, and the calculation efficiency is improved.

A light detection and ranging (LIDAR) system for a vehicle can include: a light source configured to output a transmit beam at a first orientation; a reflective surface configured to redirect the transmit beam from the first orientation to a second orientation; and a lens interface configured to receive the transmit beam at the first orientation and focus the transmit beam onto the reflective surface; wherein the LIDAR system emits the transmit beam at the second orientation into an environment of the LIDAR system.

Some implementations herein provide an optical signal redirection structure. The optical signal redirection structure includes a planar silicon surface having a <110> crystal grain orientation. The optical signal redirection structure includes a dielectric region over the planar silicon surface. The optical signal redirection structure includes a mirror structure suspended in the dielectric region, where the mirror structure is approximately parallel to the planar silicon surface.

Various embodiments of the present disclosure are directed towards an integrated circuit. The integrated circuit includes a substrate having an upper face and a lower face. The upper face includes a central region and an outer sidewall that laterally surrounds the central region and that extends from the upper face to the lower face. An optical edge coupler is disposed over the upper face of the substrate and extends in a first direction from the central region toward the outer sidewall. An outer sidewall of the optical edge coupler corresponds to the outer sidewall of the substrate and has a concave surface or a convex surface.

The disclosed embodiments relate to an integrated circuit structure and methods of forming them in which photonic devices are formed on the back end of fabricating a CMOS semiconductor structure containing electronic devices. Doped regions associated with the photonic devices are formed using microwave annealing for dopant activation.

Heterogeneous photonic circuits comprise a gain section optically coupled to a photonics section. The gain section can include at least one gain waveguide which can be formed from a III-V semiconductor material to provide optical gain. The gain waveguide can be coupled to optical components in the photonics section to form an integrated pump module. The photonics section can include a light-generating photonic circuit, which can comprise at least one waveguide doped with a rare-earth ion or transition-metal ion. Output from the integrated pump module and / or the light-generating photonic circuit can be tunable. Tuning can be implemented with feedback control.

The invention discloses an 8 * 8 lithium niobate array optical switch, and belongs to the technical field of integrated photon and optical communication. Comprising twenty switch units of Mach-Zehnder interferometer structures, and each switch unit is provided with a modulation arm composed of an upper bent waveguide and a lower bent waveguide and is provided with a push-pull type loading electrode. The switch units are combined in a multi-stage array mode and are connected through crossed waveguides, and the 8 * 8 array non-blocking optical switch is formed by using twenty switch units. According to the invention, the 2 * 2 optical switch units with small size and high modulation efficiency are designed, the transverse size of a modulation arm is shortened by adopting upper and lower bent waveguides, the driving voltage is reduced by combining a push-pull electrode loading technology, and finally the high-density 8 * 8 array optical switch is constructed by twenty units. By utilizing the electro-optical effect of lithium niobate, through the optimization of a bent waveguide structure and the driving of a push-pull electrode, low-power-consumption and high-speed optical path switching is realized, and a high-integration-level routing solution is provided for a high-speed optical communication system.

A dielectric waveguide structure of a semiconductor photonics device is formed prior to formation of the semiconductor photonics components of the semiconductor photonics device. This enables high-temperature processing techniques to be used to form the dielectric waveguide structure without concern for potential damage that might otherwise be caused to the semiconductor photonics components if the dielectric waveguide were to be formed above the semiconductor photonics components. The use of the high-temperature processing techniques may enable low optical loss to be achieved for the dielectric waveguide structure in that the high-temperature processing techniques may be used to achieve a low hydrogen concentration in the dielectric waveguide structure. The low hydrogen concentration in the dielectric waveguide structure enables higher performance to be achieved for the dielectric waveguide structure, including greater operating efficiency and increased communication bandwidth.

The invention relates to a self-adaptive on-chip optical coherence beam combiner and a method thereof, and belongs to the technical field of integrated photonics and optical coherence combination. Aiming at the problems of difficult phase matching, high system complexity, insufficient stability and the like in the prior art, the invention provides an efficient solution based on an intelligent optimization algorithm and a closed-loop feedback mechanism. The optimal voltage setting is quickly found through an intelligent optimization algorithm, and accurate phase and amplitude adjustment of the multi-path input light field is realized; based on a closed-loop feedback mechanism, the phase and amplitude of the beam combining unit are monitored in real time and dynamically adjusted, and the stability and reliability of the system are ensured. The high-integration-level on-chip optical system is realized, the complexity and the operation difficulty of the system are remarkably reduced, and meanwhile, the performance of each beam combining unit is ensured to be optimal through step-by-step optimization, so that the output power of a beam combining port is maximized. The method can be applied to the fields of optical communication, optical sensing and the like, and a new solution is provided for development of the optical coherent combination technology.

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

Embodiments disclosed herein include photonics packages. In an embodiment, the photonics package comprises a substrate. In an embodiment, a first interposer is over the substrate, and a first die is on the first interposer. In an embodiment, a second interposer is over the substrate, and a second die is on the second interposer. In an embodiment, an optical bridge is between the first interposer and the second interposer.

The invention belongs to the field of integrated photonics, and discloses a dynamic configuration device and method of an integrated optical processor chip. The configuration device comprises a signal acquisition module and a feedback configuration module, and the signal acquisition module detects an output signal of the integrated optical processor chip, processes the output signal into an electric signal and transmits the electric signal to the feedback configuration module; and the feedback configuration module processes and analyzes the electric signal based on a hybrid cooperation algorithm to generate a feedback control signal, and the feedback control signal is applied to a regulator of the integrated optical processor chip to influence the state of the regulator so as to realize dynamic configuration of the integrated optical processor chip. Compared with existing manual configuration, offline design and other methods, the method realizes real-time state mapping and dynamic configuration of the integrated optical processor chip, is a key technology for promoting practical application of the integrated optical processor chip, and is worthy of popularization and application.

An integrated photonics millimeter wave (MMW) radar communication system based on analog phase modulation scheme includes an integrated photonics MMW radar communication signal transmitter, a radar receiver, and a communication receiver. The transmitter includes a radar communication signal analog phase modulation module, an optical frequency comb (OFC) module, an electro-optic modulator (EOM), an optical shaping filter, an optical power divider, a photoelectric detector, an electric power amplifier, and a transmitting antenna that are cascaded sequentially. The radar receiver includes a radar receiving antenna, an electric low-noise amplifier (LNA), an optical phase modulator, an optical bandpass filter (BPF), a low-speed photoelectric detector, an electric low-pass filter, and a low-speed oscilloscope that are cascaded sequentially. In the communication receiver, a communication receiving antenna is sequentially cascaded with an electric LNA, a frequency mixer, and an oscilloscope, and a voltage-controlled oscillator is cascaded with a frequency multiplier and then connected to the frequency mixer.

Improvements in and relating to Photonics An optical switch for receiving an optical signal from an optical signal source and for outputting the optical signal comprises an optical router configured for routing the optical signal conditional on the detection of a single photon. The optical router comprises and optical resonator, a first optical pathway part comprising the optical resonator, and a second optical pathway part. An optical input coupling part receives the optical signal for coupling the received optical signal into the first optical pathway part and into the second optical pathway part. An optical modulator coupled to a single-photon detector unit outputs a detection signal in response to the detection of a single photon. The optical modulator is configured, in response to the detection signal, to modulate the refractive index of the optical resonator to change an optical phase shift incurred by the optical signal upon passage through the optical resonator such that an optical interference results in a routing of the output optical signal to one of the first and second optical pathway parts selected conditional on the detection of a single photon.

According to the topological defect cavity based on the valley photonic crystal and the multi-channel logic device comprising the topological defect cavity, an edge mode, protected by topology, in the topological photonic crystal can resist the influence of backscattering, and a brand new thought is provided for solving the problem of high reflection loss of a defect cavity-waveguide direct coupling system under non-resonant frequency. The topological defect cavity is designed based on the valley photonic crystal, and compared with a traditional photonic crystal defect cavity, low reflection loss can be achieved when the topological defect cavity is directly coupled with the waveguide. Besides, the resonant frequency and mode symmetry of the topological defect cavity have flexible tunability, and the multi-channel logic device based on the topological defect cavity and the harpoon type energy beam splitter is provided by utilizing the characteristics of low reflection loss and tunable resonant frequency of the topological defect cavity. According to the logic device, the output result of the harpoon beam splitter can be reserved, meanwhile, more diversified output results are achieved, and the important application value of the topological defect cavity in the integrated micro-nano photonics is reflected.

Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects are provided. An example optical interconnect joins first and second optical conduits. A first direct oxide bond at room temperature joins outer claddings of the two optical conduits and a second direct bond joins the inner light-transmitting cores of the two conduits at an annealing temperature. The two low-temperature bonds allow photonics to coexist in an integrated circuit or microelectronics package without conventional high-temperatures detrimental to microelectronics. Direct-bonded square, rectangular, polygonal, and noncircular optical interfaces provide better matching with rectangular waveguides and better performance. Direct oxide-bonding processes can be applied to create running waveguides, photonic wires, and optical routing in an integrated circuit package or in chip-to-chip optical communications without need for conventional optical couplers. An example wafer-level process fabricates running waveguides, optical routing, and direct-bonded optical interconnects for silicon photonics and optoelectronics packages when two wafers are joined.

A transceiver including an electronics integrated circuit (EIC), a photonics receiver integrated circuit (photonics RIC), a photonics transmitter integrated circuit (photonics TIC), and an interposer. The photonics RIC and TIC are each electrically coupled with the EIC. The photonics TIC is separate from the photonics RIC and includes at least one optical structure having a thin film lithium-containing (TFLC) electro-optic material. The interposer is coupled with the EIC, the photonics RIC, and the photonics TIC. The interposer is configured to route at least one of electrical or optical signals between at least two of the photonics RIC, the photonics TIC, or the EIC.

The invention discloses an integrated Brillouin narrow linewidth laser and a preparation method thereof, and belongs to the field of integrated photonics. The integrated Brillouin narrow linewidth laser is composed of two layers of silicon nitride micro-rings, a silicon oxide spacing layer is arranged between the two layers of silicon nitride micro-rings, the free spectral path of the two layers of silicon nitride micro-rings is designed to be Brillouin frequency shift, and coupling waveguides are designed beside the micro-rings. The invention also provides a corresponding preparation method, which comprises the following steps of: sequentially depositing the first silicon nitride layer, the first silicon oxide layer, the second silicon nitride layer, the second silicon oxide layer and the etching pattern on the substrate, and finally depositing silicon oxide as a protective layer. The TM mode is intensively distributed in the silicon oxide between the two layers of silicon nitride through the constraint of the two layers of silicon nitride micro-rings, the defect that the Brillouin gain of a silicon nitride material is weak is overcome, the mode size is reduced, the Brillouin threshold value is reduced, and high-efficiency output of the Brillouin narrow linewidth laser is achieved.

The invention discloses a method for realizing a multi-polarization high-numerical aperture Laplace differentiator based on a metasurface, and belongs to the technical field of micro-nano photonics, optical simulation calculation and light field regulation and control. The single-layer metasurface is composed of a cylindrical array which is made of an amorphous silicon material and has a hexagonal lattice period. Geometric parameters of a silicon cylinder are designed and selected, so that the metasurface excites resonance spectrums with large-angle dispersion capability under illumination of p polarized light and s polarized light in the same working wavelength range, and an optical transfer function required by optical Laplacian differential operation with broadband and high numerical aperture is realized in a real airspace; and Laplacian operation can be executed under non-polarized light and non-coherent light conditions. And generating a processing file of the corresponding metasurface according to the determined geometric dimension of the silicon cylinder unit. And processing the dielectric metasurface by adopting a micro-nano processing technology of electron beam etching. In a working wave band, the metasurface can directly obtain two-dimensional second-order edge contour information of a target image under various illumination conditions.

An optical demultiplexer circuit is configured to demultiplex a plurality of polarized optical signals using the same set of photonics components. A multiplexed optical signal may be split into two or more polarized optical signals, each carrying a plurality of data streams that are multiplexed onto different wavelength components. An optical resonator structure, an optical waveguide structure, and a photodetector structure of the optical demultiplexer circuit are configured to demultiplex a wavelength component from the two or more polarized optical signals, as opposed to having separate optical resonator structures for each of the two or more polarized optical signals. The two or more polarized optical signals may propagate along an optical waveguide loop in opposite directions toward the optical resonator structure and may optically couple to the waveguide structure through the optical resonator structure.

The invention discloses a neural network accelerator based on optical computing, which relates to the technical field of artificial intelligence hardware acceleration and comprises an optical convolution module and an optical full connection module which are directly connected. The optical full connection calculation part can be started after the optical convolution calculation part is completed, photoelectric conversion between convolution and full connection is avoided, photoelectric conversion links are reduced to the maximum extent, the photoelectric conversion loss rate is reduced, and the data transmission efficiency is improved. According to the method, the high parallel characteristic of photonics and the dynamic calculation requirement of a neural network are deeply fused, high-density photon integration is achieved, convolution and full-connection operation are directly completed in an optical domain through the optical calculation technology, the calculation speed and precision are improved, meanwhile, the system energy consumption overhead is reduced, and the system performance is improved. And an efficient and low-power-consumption hardware basis is provided for training and reasoning of a super-large-scale model.

A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.

A photonics device is described. The photonics devices include at least one electrode and a waveguide. The waveguide includes electro-optic material(s), a ridge, and a slab. A first portion of the waveguide is proximate to the electrode(s), while a second portion of the waveguide includes a bend. The ridge includes a first side and a second side opposite to the first side. Portions of the slab are proximate to the first side and the second side of the ridge in the first portion of the waveguide. A portion of the slab is omitted in the second portion of the waveguide.

A device has first, second and third elements fabricated on a common substrate. The first element supports a first optical mode in an active waveguide structure characterized by a mesa. The second element supports a second optical mode in a passive waveguide structure. The third element, at least partly butt-coupled to the first element, supports an intermediate optical mode in an intermediate waveguide structure characterized by a waveguide core cross section including a shallow step. A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and the intermediate optical mode. No adiabatic transformation occurs between the intermediate optical mode and the first optical mode. Lithographic alignment marks facilitate precise alignment of the three elements during device fabrication.

A photonics device is described. The photonics device includes a device region and a coupling region. The device region has a first portion of a waveguide therein. The coupling region includes a second portion of the waveguide, at least one additional structure, and a cladding separating the additional structure(s) from the second portion of the waveguide. The cladding has a cladding index of refraction. The additional structure(s) has index(es) of refraction greater than the cladding index of refraction. The waveguide includes at least one thin film lithium-containing (TFLC) electro-optic material.

The invention belongs to the technical field of single-photon emitters, and relates to a radiation-enhanced single-photon emitter and a preparation method thereof. The radiation-enhanced single-photon emitter comprises an hBN thin layer and an emitter; the emitter is disposed over the hBN thin layer, and the emitter is located within a range of 10 nm over the surface of the hBN thin layer. By using the hyperbolic dispersion characteristic of the hBN thin layer, the enhancement of the Purcell and the enhancement of the photon coupling output power can be realized in a broadband range. The single-photon emitter solves the problems that in an existing single-photon emitter, the photon Pelsel effect is enhanced, and the photon coupling output efficiency is low. Therefore, the application range of the material in photonics and quantum optics is expanded. Compared with an existing single-photon emitter, the single-photon emitter is simple in structure, does not need a complex manufacturing process, and reduces the manufacturing cost.

The invention belongs to the technical field of nano photonic crystal micromachining, and particularly relates to a suspended photonic crystal film and a preparation method thereof. Sequentially depositing an aluminum oxide layer, a silicon dioxide layer and a silicon nitride layer on the silicon substrate, and then forming a patterned photonic crystal structure by etching the silicon nitride layer; part of the silicon substrate is removed through dry etching, the exposed aluminum oxide layer and the exposed silicon dioxide layer are sequentially removed through a wet etching or dry etching synergistic process, and the suspended photonic crystal film is obtained. Through the design of the composite sacrificial layer and the inverted etching strategy, the problems of structure collapse, etching residue and low alignment precision in the traditional process are solved, and the method is suitable for the fields of Moire photonics, integrated photonics and the like.

A photonics device is described. The photonics device includes a waveguide and an electrode. The waveguide configured to transmit an optical signal having a wavelength less than 1100 nanometers and is a single mode waveguide. The waveguide includes electro-optic material(s). The electrode is proximate to a portion of the waveguide and configured to carry an electrode signal for modulating the optical signal. The photonics device is configured to be coupled with at least one multimode fiber. The multimode fiber(s) is configured to transmit a plurality of modes.