The invention discloses an environment-triggered
memristor with a nonvolatile storage function and a preparation method thereof, and the method comprises the steps: 1, adding
polymer matrix
powder with a hydrophilic group into an
acetic acid solution, stirring to obtain a
polymer matrix solution, taking inorganic salt with a
moisture absorption characteristic, adding the inorganic salt into the
polymer matrix solution, carrying out ultrasonic treatment, and filtering to obtain a polymer
matrix solution; a precursor solution is obtained; 2, cleaning and blow-
drying the flexible PI film with the ITO conductive layer to obtain a clean substrate; 3, spin-
coating the precursor solution on the surface of an ITO conducting layer of a clean substrate, airing and
drying to form a high-salt doped polymer matrix layer on the surface of the ITO conducting layer; and 4, sequentially
sputtering active
metal and protective
metal on the surface of the high-salt doped polymer matrix layer to respectively form an active
metal layer and a metal protective layer, thereby obtaining the environment-triggered
memristor with the nonvolatile storage function. According to the invention, the
coupling of environment threshold sensing and nonvolatile storage is realized, and the environment adaptability and safety of the
memristor are improved.