120 results about "Waveguide mode" patented technology

The invention relates to a compact polarization rotation beam splitter, which comprises an input waveguide, a mode conversion region, a mode coupling region and an output waveguide, a TM0 mode optical signal in the optical signals is converted into a TE mode high-order optical signal in the mode conversion area; the mode coupling region is used for coupling the TE mode high-order optical signal into a TE0 mode optical signal with the first adiabatic coupling waveguide; and the output waveguide is used for outputting a TE0 mode optical signal which is not subjected to mode conversion in the optical signals, and outputting a TE0 mode optical signal obtained after mode conversion of the mode conversion area and the second adiabatic coupling waveguide. According to the invention, the polarization rotation path can be shortened through high-order mode conversion in the mode conversion area, efficient beam splitting is realized by using the asymmetric adiabatic coupling waveguide in the mode coupling area, the size reduction of a redundant structure is avoided through function integration, the performance of the beam splitter is ensured, and the problems of large size and low cost of the existing polarization rotation beam splitter are solved. And the performance is not good.

The invention discloses a high-precision light column display method and system based on a liquid crystal variable refractive index, and the method comprises the steps: generating a multi-dimensional driving signal with a spatial gradient characteristic according to a preset spatial distribution parameter of a target light column, and carrying out the coupling regulation and control of the voltage amplitude and frequency of the multi-dimensional driving signal, the molecular arrangement state of the liquid crystal electro-refractive index adjusting layer is dynamically changed, and a refractive index gradient field matched with the axial phase distribution requirement of the light column is established. Through a waveguide mode-phase field discretization cooperative mapping mechanism and a double-loop dynamic anti-interference architecture, real-time generation of a high-resolution light beam and stable transmission in a complex environment are realized without a mechanical scanning part, and high precision and strong robustness are achieved.

The invention provides a single-port input / output multi-state adjustable waveguide mode converter and a preparation method thereof, and belongs to the technical field of on-chip silicon-based polymer hybrid integrated waveguide mode converters. According to the invention, a double-layer MZI parallel combination structure is adopted, independent electrodes are configured at specific positions of interference arms, and corresponding modulation signals are applied, so that accurate regulation and control of an input light field are realized. When E00-mode signal light is input, the structure can dynamically realize the conversion function of three modes of E00 / E01 / E10 on the premise of keeping single-port output, and the mode conversion efficiency reaches 95%. And the device is compatible with a standard silicon-based CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process, is beneficial to reducing the manufacturing cost and promoting large-scale integrated application, is suitable for the fields of a high-capacity mode division multiplexing system and multi-dimensional optical signal processing, and can meet the urgent requirements of modern optical communication on high-integration-level, reconfigurable operation and low-cost devices.

The invention belongs to the technical field of integrated photonic devices, and particularly relates to an electric tuning silicon nitride waveguide multimode interference coupler based on a two-dimensional material covering layer. In order to solve the problem that an existing silicon nitride photonic device lacks effective electro-optical regulation and control capacity, a two-dimensional material covering layer (such as molybdenum disulfide and tungsten disulfide) is integrated on the surface of a silicon nitride waveguide, and an up-and-down structure of a metal electrode-two-dimensional material-silicon dioxide cladding-silicon nitride waveguide is constructed. When external bias voltage is applied, the effective refractive index of the waveguide mode is changed through evanescent field coupling by means of the electrical refraction effect of the two-dimensional material, and active regulation and control of the optical path of the silicon nitride waveguide without the thermo-optic effect are achieved. Compared with a lithium niobate-silicon nitride heterogeneous integration scheme, the two-dimensional material with the atomic layer thickness is compatible with the CMOS technology, a complex heterogeneous bonding technology is not needed, and the advantage of monolithic integration is achieved. The device is particularly suitable for a reconfigurable optical signal processing device in a silicon-based photon integrated circuit.

The optical touch module comprises the following components: a light source, a first grating, a second grating, an optical waveguide layer, a photoelectric detector array and a signal processing module, a first grating and a second grating with different vector directions are arranged on the optical waveguide layer; the light source emits incident light with a specific wavelength, and the diffraction angle of diffraction light of the incident light in the first grating and the second grating in the air is larger than 90 degrees. The light source is incident on the optical waveguide layer to form a light spot, and the light spot covers the first grating and the second grating; diffracted light is coupled into the optical waveguide layer by the first grating and the second grating to form two waveguide modes in different directions, and the diffracted light is transmitted to the side edge of the optical waveguide layer to form at least four light current points which are received by the photoelectric detector array arranged on the side edge; the signal processing module calculates the position of an incidence point of the light source on the optical waveguide layer according to the position of an electric signal of the photoelectric detector array, and finally completes optical interaction with incident laser as a signal. The design that the vector directions of the first grating and the second grating point to the long side of the optical waveguide layer enables light to be propagated at a certain angle in the short side direction of the optical waveguide layer, propagation paths can be reduced, optical waveguide transmission loss can be reduced, the electric signal strength is improved, and therefore the touch size is increased under the conditions of the same laser signal strength and the same detector.

The invention discloses a photoelectric co-packaging adapter plate and a photoelectric co-packaging device. A photoelectric co-packaging adapter plate comprises a first coating layer and a second coating layer which are formed on a substrate, and an optical waveguide arranged between the first coating layer and the second coating layer, and the refractive index of the optical waveguide is larger than the refractive index of the first coating layer and the refractive index of the second coating layer; a light emitting window is formed in the second coating layer, an aspherical lens is arranged on the light emitting window, a first reflecting part is arranged at the first end part of the optical waveguide, and the first reflecting part is used for forming a light path between the optical waveguide and the aspherical lens. According to the technical scheme provided by the invention, loss caused by mismatching of a micro-nano optical chip mode field and a silicon optical waveguide mode field is reduced, and alignment precision requirements between different modules are reduced.

The present invention discloses a broadband, high-efficiency circular waveguide TE31 mode exciter, belonging to the field of microwave and millimeter wave technology. The exciter comprises a standard TE10 mode rectangular waveguide section, a TE10 mode-TE30 mode conversion section, a standard TE30 mode rectangular waveguide section, a TE30 mode-TE31 mode conversion section, and a TE31 mode circular waveguide section, all connected in sequence. The excitation process of the TE31 mode exciter is divided into two steps: first, converting the TE10 mode to the TE30 mode, and then converting it to the TE31 mode. With the cooperation of a power divider, a torsion waveguide, and a gradient waveguide, the conversion from the rectangular waveguide TE10 mode to the circular waveguide TE31 mode is achieved, reducing losses during the conversion process and ensuring conversion efficiency.

The application discloses a waveguide mode priority control system based on a coating technology and relates to the field of waveguide gas lasers.The system comprises a boundary construction unit, a radial discharge unit, a mirror cooling unit and a basic mode optimization unit.The boundary construction unit is sequentially distributed with a central clearance mode surface, a peripheral closed traction ring and an outer return discharge belt from inside to outside on the inner surface of an electrode plate.The radial discharge unit is provided with a radial discharge bridge between the traction ring and the discharge belt, and a gradient conductive layer with continuously decreasing resistivity is laid on the surface of the bridge.The mirror cooling unit is provided with a mirror cooling flow channel and a cooperative heat dissipation structure at the position corresponding to the traction ring and the discharge bridge inside the electrode plate.The basic mode optimization unit is connected with a dynamic impedance matching compensation network.Through deep cooperation of space geometry traction, gradient impedance outer guide and isomorphic thermodynamics locking, the application intercepts and directionally discharges micro-discrete charges, avoids the invasion of charge boundaries into the core clearance area, effectively dissipates the energy of high-order mode flanks, and thus stabilizes the output of high-purity basic mode priority laser beams.

The invention relates to the technical field of electromagnetism, in particular to a multi-layer slab waveguide mode processing method, device, equipment, medium and program, and the method comprises the steps: constructing a transfer matrix model of a multi-layer slab waveguide; obtaining boundary conditions of the infinite space, and determining a corresponding real number domain characteristic equation and a complex number domain characteristic equation according to the transfer matrix model and the boundary conditions so as to determine a guided mode and a leakage mode of the multilayer slab waveguide in the infinite space; introducing a perfect matching layer to convert a radiation condition of an infinite space into an absorption boundary in a finite computational domain, constructing a finite space characteristic equation according to the thicknesses of the perfect matching layer and the absorption boundary, and positioning a plurality of correction leakage modes according to the finite space characteristic equation to generate a Bereger mode; and generating complete mode distribution according to the guided mode, the leakage mode and the Bereger mode. Therefore, the problems of relatively poor calculation precision, relatively slow calculation speed, limitation of complete mode solving in the multilayer slab waveguide and the like in related technologies are solved.

A silicon-phase change material hetero-integrated waveguide structure includes a silicon flat plate layer and a phase change material deposited on the silicon flat plate layer. A non-volatile waveguide phase shifter includes a base layer, a hetero-integrated waveguide structure and a silicon waveguide mode spot conversion structure fixed on the base layer, two ends of the hetero-integrated waveguide structure are symmetrically connected to the silicon waveguide mode spot conversion structure; the silicon waveguide mode spot conversion structure includes two silicon waveguides with narrow-to-wide and an ridge waveguide with wide-to-narrow arranged in axial symmetry; an aluminum oxide film is covered on the phase change material, a single-layer graphene is on the aluminum oxide film, and a metal layer is on the single-layer graphene, the metal layer includes two metal electrodes. The single-layer graphene forms ohmic contact with the metal electrodes, current passes through the graphene to generate heat, the heat is conducted through the aluminum oxide film below the single-layer graphene to provide heat required for phase change of the low-loss phase change material. The phase shifter has the advantages of compact structure, low insertion loss, small driving voltage, low phase change power consumption, non-volatile phase adjustment, etc. and can be used as a core optical path regulation device in an integrated optoelectronic chip.

The invention discloses a broadband circular waveguide TE01 mode exciter based on a crossed ridge waveguide, and relates to the technical field of microwaves. The exciter comprises a rectangular waveguide four-path power division feed structure for dividing the power of a TE10 mode into four paths, a crossed ridge waveguide TE22 mode forming structure for synthesizing the four paths of TE10 modes into a crossed ridge waveguide TE22 mode, and a circular waveguide TE01 mode forming structure for converting the crossed ridge waveguide TE22 mode into a circular waveguide TE01 mode. By introducing the crossed ridge waveguide structure, the directional regulation and control of waveguide dispersion are realized, and the cut-off frequency interval between a working mode and a parasitic mode is remarkably improved, so that the bandwidth is expanded. A crossed fan-shaped structure is introduced to serve as a middle structure of the crossed ridge waveguide and the circular waveguide, the cut-off phenomenon caused by sudden change of the waveguide shape is avoided, and the working bandwidth is further expanded. The high-purity and high-efficiency broadband filter has the advantages of being high in purity, high in efficiency, wide in frequency band and high in compactness, meanwhile, the structure is simple, machining and assembling are easy, and good engineering practicability is achieved.

The present invention discloses an optical gyroscope integrated chip based on a thin-film lithium niobate photonic integrated platform. The overall structure adopts a hybrid curved waveguide with multiple parts of continuously variable curvature, which reduces the insertion loss caused by the mode field mismatch between the straight waveguide and the curved waveguide at the junction, reduces the excitation of high-order modes, and helps to reduce the overall size of the chip. In addition, the curved waveguide increases the polarization extinction ratio of the chip and filters out quasi-TE 00 The present invention utilizes waveguide mode leakage to achieve single-mode, single-polarization operation of the lithium niobate waveguide. The single-TE mode lithium niobate waveguide on the entire chip, excluding the curved waveguide of the folded modulator and the coupler, forms a waveguide polarizer with a high polarization extinction ratio. This allows on-chip single-mode, single-polarization operation to be achieved without the need for an additional polarizer design, effectively reducing chip complexity, improving chip stability, and reducing chip size.

This invention discloses a broadband, low-loss TE10-TE20 mode converter, belonging to the field of millimeter-wave device technology. It includes a cuboid matching structure, a bed-of-nails structure, and an input E-plane rectangular waveguide, a tapered waveguide, and an output H-plane wide waveguide connected sequentially along a common bottom surface. The mode converter is divided into an upper cavity and a lower cavity along the upper bottom surface of the output H-plane wide waveguide. The input E-plane rectangular waveguide is divided into two halves, located in the upper and lower cavities respectively. The tapered waveguide includes a tapered height reduction waveguide and a tapered widening waveguide located in the upper and lower cavities respectively. The cuboid matching structure is located on the symmetry axis of the lower bottom surface of the tapered widening waveguide and is adjacent to the output H-plane wide waveguide. The bed-of-nails structure is located on both sides of the tapered widening waveguide and the output H-plane wide waveguide, outside the connection point between the input E-plane rectangular waveguide and the tapered widening waveguide. This invention effectively expands the operating bandwidth of the mode conversion, shortens the path length, and has the advantages of simple and compact structure, easy assembly, broadband operation, and low loss.

The application discloses a quantum controlled NOT gate, which comprises a first input transverse mode converter, a second input transverse mode converter, a first beam splitter, a second beam splitter, a third beam splitter, a fourth beam splitter, a fifth beam splitter, a first output transverse mode converter and a second output transverse mode converter. The controlled NOT gate operation is realized by arranging four transverse waveguide mode converters and five beam splitters, and the structure is simple and compact, the optical path is stable, and the entanglement efficiency between two-bit quantum inputs in the structure is high. When the controlled NOT gate operation is realized, the wavelength of incident light is not limited, the whole structure has wideband effectiveness, and the structure can also use wavelength encoding while using multiple transverse waveguide encoding, so that the waveguide mode encoding and wavelength encoding light can be multiplexed and demultiplexed in the same channel, and therefore the dimension of the controlled NOT gate calculation and communication can be expanded.

The present invention relates to the field of optical waveguide manufacturing technology, specifically disclosing an optical waveguide, a manufacturing method thereof, and an optical waveguide spot adapter. The optical waveguide is manufactured using silicon oxycarbide with a refractive index ranging from 1.457 to 2.7 (inclusive), exhibiting low transmission loss and a good thermo-optical coefficient. The optical waveguide is suitable for optical waveguide devices of various sizes and can be used for optoelectronic monolithic and hybrid integration. Furthermore, the optical waveguide can achieve single-mode transmission even with a large refractive index difference between the core and cladding, resulting in lower loss compared to standard single-mode fiber coupling. Furthermore, the provided optical waveguide manufacturing method utilizes a low process temperature during the manufacturing process, eliminating the need for high-temperature annealing and being compatible with IC manufacturing processes.

The invention discloses an input coupler of a convolution traveling wave amplifier, and belongs to the technical field of microwave devices. The coupler for converting the rectangular waveguide TE10 mode into the circular waveguide TE11 mode structurally and mainly comprises an input rectangular waveguide, an electron beam circulation end and an output circular waveguide, the rectangular waveguide is connected with the circular waveguide, and the electron beam circulation end is completely communicated with the output circular waveguide. The electron beam circulation end is composed of a plurality of cylindrical resonant cavities, and the number, the radius and the width of the cylindrical resonant cavities are matched with the working frequency of the device. Compared with a traditional input coupler, the input coupler disclosed by the invention ensures that a TE11 mode is output by the output circular waveguide in a single direction by utilizing a multi-diffraction principle of a plurality of cylindrical resonant cavities, and the transmission and purity of the output circular waveguide TE11 mode can be improved; meanwhile, the electron beam circulation end is an open end, and a large space can be provided for electron beam circulation.

The application relates to a kind of optical device parameter measurement methods based on mathematical physics combination, medium and system, to optoelectronic test technical field, it includes: the physical field simulation model of optical device is established and obtains port electromagnetic field distribution;Utilize waveguide mode orthogonality to the port electromagnetic field is carried out surface integration, obtains the frequency domain complex amplitude of each port;According to the frequency domain complex amplitude, calculate scattering matrix, extract optical device parameter.The optical device parameter measurement method provided by the application can reflect the physical characteristics of the optical device, and can be accurately fitted and optimized through mathematical algorithm, thereby improving the accuracy and efficiency of parameter extraction.

The invention provides a topological interference power divider, a power control method and related equipment. The topological interference power divider comprises a dielectric substrate; the upper copper layer and the lower copper layer are arranged on the surface of the dielectric substrate; the valley photonic crystal structure is composed of triple symmetric apertures of periodic triangular lattices etched on the upper copper layer; the structure comprises A-type unit cells and B-type unit cells which are alternately arranged, the topological waveguide channel is a domain wall formed by the interface of the A-type unit cell and the B-type unit cell, and the channel comprises a plurality of branches which are intersected in a central area to form a coherent interference area; the input port and the output port are respectively arranged at the head end and the tail end of the topological waveguide channel; a matching network is arranged between each port and the channel and is used for realizing conversion between a conventional guided wave mode and a topological edge state; the modulation of the output power distribution ratio, the central working frequency or the transmission bandwidth of the topological interference power divider can be realized by regulating and controlling the topological edge state in the coherent interference region, and the flexibility and the reconstruction capability of power distribution are improved.

A structure for emitting light is provided. The structure comprises an emissive layer (EML) positioned between electrodes. The EML is tuned such that emission of a transverse electric (TE) waveguide mode from the EML is promoted. The structure further comprises an optical component for diffracting the TE waveguide mode to emit light from the structure.

This invention provides a testing method for optical waveguides, relating to the field of optical waveguide testing. The required instruments for this testing method include a laser source, a microscope objective, a measuring instrument, a spectrometer, a coupling device, and a prism. The testing employs a prism coupling method, using a high-refractive-index prism to achieve phase matching between the incident light wave and the waveguide mode, thus realizing waveguide optical excitation. This invention improves the sensitivity and accuracy of optical waveguide testing, enabling the measurement of minute changes in optical parameters and providing accurate measurement results. It allows for rapid measurement, significantly reducing testing time and enabling testing to be completed in a short period. Furthermore, it allows for real-time monitoring and analysis of the testing process, thereby providing crucial data support for the design, manufacturing, and performance evaluation of optical waveguide devices.

This invention discloses a high-efficiency nonlinear optical frequency converter based on high-power continuous optical transmission using quartz micro / nano fiber, comprising a wavelength-tunable laser, an optical fiber amplifier, a quartz micro / nano fiber, a sealed cavity, and an optical fiber low-pass filter; the quartz micro / nano fiber includes a first untapered portion, a second untapered portion, a first tapered transition region, a second tapered transition region, and a waist region, transmitting an optical field TE. 01 The mode cutoff method precisely controls the waist diameter of micro / nano fiber and accurately tunes the input light wavelength. The nonlinear light frequency conversion process excited by high-power continuous light transmitted in quartz micro / nano fiber satisfies perfect phase matching. The fundamental mode of the input light and the higher-order mode fields of the harmonic signal light have high overlap in the waveguide mode, which can efficiently generate continuous second and third harmonic signal light. The device has high stability, high efficiency, and low cost, and can be applied in fiber lasers, all-optical signal processing, fiber optic sensing and other fields.

A multi-mode microwave waveguide blade sensing system (500) includes a transceiver, a waveguide (174b), and a probe sensor (176). The transceiver generates a microwave energy signal having a first waveguide mode and a different second waveguide mode. The waveguide (174b) includes a first end that receives the microwave energy signal. The probe sensor (176) includes a proximate end (178a) that receives the microwave energy signal from the transceiver and a distal end (178b) including an aperture that outputs the microwave energy signal. The probe sensor (176) directs the microwave energy signal at a first direction based on the first waveguide mode and a different second direction different based on the second waveguide mode. The probe sensor (176) receives different levels of reflected microwave energy based at least in part on a location at which the at least one microwave energy signal is reflected from the machine.

The application discloses a kind of based on super surface rectangular waveguide mode conversion device and method, for realizing TE 10 -TE 20 -TE 01 Metal waveguide mode conversion, rectangular waveguide mode conversion device includes first to fifth section waveguide, and first to second super surface structure, wherein: first, third, fifth section waveguide is used to transmit rectangular waveguide TE 10 Mode, rectangular waveguide TE 20 Mode and circular waveguide TE 01 Mode, second, fourth section waveguide is used to generate multimode interference;First super surface structure is used to realize TE 10 Mode to TE 20 Mode conversion, second super surface structure is used to realize TE 20 Mode to TE 01 Mode conversion;Second section waveguide, first super surface structure and third section waveguide constitute TE 10 -TE 20 Mode converter;Fourth section waveguide and second super surface structure constitute TE 20 -TE 01 Mode converter.The application utilizes the regulation and control ability of super surface to electromagnetic field, and rectangular waveguide TE 10 Mode can be converted into circular waveguide TE 01 Mode in smaller space.

The application relates to the technical field of integrated optical chip, in particular to an optical waveguide mode spot conversion device and a manufacturing method thereof. The device comprises a semiconductor substrate, a lower waveguide, a cladding layer and an upper waveguide layer. The cladding layer is arranged on the semiconductor substrate. The lower waveguide with a wedge structure is arranged in the cladding layer. The upper waveguide layer is arranged on the cladding layer and is used for coupling the lower waveguide with a small head end and an optical fiber. The first refractive index of the upper waveguide layer is smaller than the second refractive index of the lower waveguide and is larger than the third refractive index of the cladding layer. An etching stripe is arranged on the upper surface of the upper waveguide layer and is close to the small head end of the lower waveguide. The etching stripe is arranged based on the position of the small head end of the lower waveguide and extends from the end surface of the upper waveguide layer along the extension direction of the lower waveguide. The etching stripe is used for limiting the mode spot size on the end surface of the upper waveguide layer. The sensitivity of the small head end size of the wedge-shaped waveguide to the mode spot size conversion can be reduced. The optical polarization-related loss is reduced. The process difficulty is reduced, and the mismatch loss of the mode spot conversion is reduced.

The present application relates to a preparation method for a full-color Micro-LED module, and a full-color module. The preparation method comprises the following steps: preparing a blue Micro-LED chip array, and implanting boron ions into side walls of blue Micro-LED chips; flip-chip bonding the blue Micro-LED chip array to a driving substrate, and fixing the blue Micro-LED chip array and the driving substrate into a holder structure; fixing a metal-dielectric composite reflective layer on the holder structure; preparing a dielectric material framework layer on the metal-dielectric composite reflective layer, and spin-coating the dielectric material framework layer with a quantum dot layer to form a full-color Micro-LED module. According to the present application, the implantation of the boron ions can increase the resistivity of the side walls of the chips, effectively suppressing leakage and non-radiative recombination of carriers on the side walls of the chips; the metal-dielectric composite reflective layer has high transmittance for blue light and high reflectivity for green and red light, and can thus increase the light emitting intensity; and the dielectric material framework layer can enable double-excitation resonance in both transverse electric and transverse magnetic waveguide modes, thereby effectively broadening the resonance bandwidth, improving the overall color conversion efficiency.

The present invention discloses an ultra-compact and ultra-wideband waveguide mode converter based on longitudinal refractive index modulation. The waveguide mode converter includes an input waveguide and an output waveguide with different widths, and a refractive index perturbation modulation structure with a longitudinal refractive index modulation function, wherein: the input waveguide and the output waveguide are connected in a non-central axisymmetric manner; a refractive index perturbation modulation structure is introduced into the cross-section of the output waveguide, and the refractive index perturbation modulation structure is located on the splicing boundary of the input waveguide and the output waveguide and extends along the positive direction of waveguide transmission. By designing a binary refractive index modulation structure with a certain length in the longitudinal direction in the cross-section of the waveguide and reverse designing and optimizing the length and material distribution of the longitudinal refractive index region, the present invention realizes an ultra-compact and ultra-wideband mode conversion, and this method can be extended to the conversion of any order mode. The present invention provides a new method for improving the integration degree and performance of devices in an on-chip integrated system.

This invention discloses a thin-film lithium niobate fast adiabatic mode converter and its implementation method, belonging to the field of integrated optoelectronics technology. The converter is a lithium niobate layer, a dual waveguide system composed of waveguide a and waveguide b, including an input waveguide, a mode converter waveguide, and an output waveguide connected in sequence; the implementation method includes the following steps: Step 1. Determine the width w2 of waveguide b and the width w of waveguide a. 1max and w 1min Step 1. Waveguide spacing gap1, gap2, and gap3, and waveguide lengths L1 and L3; Step 2. Obtain the taper function y(w1) of the mode converter waveguide in waveguide a using fast adiabatic theory; Step 3. Scan the mode converter waveguide length L2 to obtain the mode conversion efficiency curve; Step 4. Select a suitable L2 according to application requirements; This invention provides a highly efficient and compact fast adiabatic mode converter implementation method, which has the advantages of large bandwidth, low insertion loss, compact structure, and large fabrication tolerance.

This invention discloses a method for operating in a circular waveguide TE 11 This invention relates to a millimeter-wave high-power rotating reflective waveguide phase shifter, belonging to the field of millimeter-wave transmission technology. It comprises a rectangular waveguide wide-side slot 3dB coupler, a rectangular-circular waveguide transition section, and a rotating circular waveguide phase shifting section, with its central plane divided into two symmetrical microwave channels. Electromagnetic waves are first injected through the first port of the rectangular waveguide wide-side slot 3dB coupler, then split into two paths entering the rectangular-circular waveguide transition section through the third and fourth ports of the coupler, and subsequently injected into the rotating circular waveguide phase shifting section. After propagating a certain distance within the two phase shifting waveguides, the waves are reflected by a rotating metal plate piston and finally output from the second port of the rectangular waveguide wide-side slot 3dB coupler. This invention modulates the phase at the output end by changing the electrical length of the electromagnetic wave propagating within the phase shifting section by rotating the position of the metal plate piston. Within the same operating frequency band, it possesses advantages such as high power capacity, compact structure, high phase shifting accuracy, and a large phase shifting range.

This invention relates to a high-efficiency and compact hollow circular waveguide mode purifier, comprising five parts: a main waveguide, an input waveguide, a spherical waveguide, a re-entry resonant cavity, and an output waveguide; this invention can maintain high TM over a wide bandwidth. 01 TM 02 - TM 01 The mode conversion efficiency is high, which can effectively adapt to application environments with various mode compositions. This invention adopts a spherical corrugated waveguide and a re-entry resonant cavity, which has a simple structure and compact axial length, providing a feasible technical route for achieving compact mode purification.

The invention discloses a TE10-TM01 waveguide mode conversion structure and a microwave device, which are applied to the technical field of radial power synthesis, and are characterized in that a central circular waveguide comprises a peripheral part arranged along the circumferential direction, and a first surface and a second surface which are oppositely arranged along the axial direction; the input waveguide and the input waveguide resonant cavity are positioned on the outer peripheral part and are communicated with the central circular waveguide; the input waveguides and the input waveguide resonant cavities are distributed at equal intervals along the circumferential direction of the central circular waveguide; the output waveguide resonant cavity is positioned on the first surface and is communicated with the central circular waveguide; and the output waveguide is positioned on the second surface and is communicated with the central circular waveguide. The input waveguides and the input waveguide resonant cavities are distributed at equal intervals in the circumferential direction of the central circular waveguide so as to realize a uniform TM resonant mode; and a TE10 mode can be converted into a circular waveguide mode by combining with the central circular waveguide, and a TE11 mode can be cut off through the output waveguide, so that the output of a TM01 mode signal is ensured.