15 results about "Thz radiation" patented technology

The invention relates to a THz sensor (2) for measuring an object to be measured (6), in particular, a pipe, the THz sensor (2) comprising:a THz transceiver (10) for emitting and receiving THz radiation,a lens (14) for bundling the THz radiation emitted by the THz transceiver (10) and emitting a THz transmission beam (8) along the optical axis (A) and for receiving a THz reflection beam (15),a support device (11), on which the lens (14) and / or the THz transceiver (10) is accommodated or fastened.Hereby, it is provided thata THz radiation-influencing compensation formation for modifying and / or reducing incident THz radiation is provided in a compensation area between the lens and the support device (11).

A physiological implement includes a terahertz material, a material that emits terahertz radiation in the frequency range of about 0.1-10 THz. The physiological implement may be a massage device and the massage device may be configured to vibrate, or a compression sleeve configured to extend around a limb of a person, a therapeutic composition for application to the skin of a person, a lens that is configured to extend over a light emitting device or laser, an air moving device, such as a hair dryer, a patch for application to a person's body, a sexual implement, an electronic device cover, a sleeping fabric or bag, a garment and the like.

Provided is a terahertz radiation detection device capable of efficiently detecting radiation in a long-wavelength region from far-infrared light to at or above the terahertz range. The terahertz radiation detection device includes an imaging lens, a detection element, and a filter unit. The imaging lens faces a subject. The detection element detects terahertz radiation generated from the subject among light incident through the imaging lens. The filter unit includes: a silicon substrate that is disposed closer to the subject than the detection element and absorbs visible light and near-infrared light; and a plurality of structures periodically arranged on the silicon substrate. The filter unit transmits THz radiation incident on the structures. The structures prevent the reflection of light from far-infrared light wavelengths to predetermined wavelengths including THz radiation wavelengths.

A physiological implement includes a terahertz material, a material that emits terahertz radiation in the frequency range of about 0.1-10 THz. The physiological implement may be a massage device and the massage device may be configured to vibrate, or a compression sleeve configured to extend around a limb of a person, a therapeutic composition for application to the skin of a person, a lens that is configured to extend over a light emitting device or laser, an air moving device, such as a hair dryer, a patch for application to a person's body, a sexual implement, an electronic device cover, a sleeping fabric or bag, a garment and the like.

The present invention relates to a method and a system for manufacturing an electrically conductive layer having functionality, in particular electrical conductivity, which is as homogeneous as possible, specified, or locally different in a defined way. In the method, layer material is applied to a surface and is converted, by the action of preferably at least one energetic beam, into a preliminary electrically conductive layer having higher electrical conductivity. The preliminary electrically conductive layer is then scanned with at least one THz beam of continuous THz radiation, with spatial resolution. From a measurement of the reflectivity of the preliminary electrically conductive layer with respect to the THz beam, spatially resolved electrical conductivity of said layer is determined. If points in the preliminary electrically conductive layer which have too low or too high an electrical conductivity are detected, said points are then locally post-treated with the energetic beam in order to modify the electrical conductivity in order to obtain the electrically conductive layer having functionality which is as homogeneous as possible, specified, or locally different in a defined way. The method allows high-quality electrically conductive layers to be produced on an industrial scale.

An antenna comprising: input and output coaxial horn antennas coupled with a self-assembled helical slow-wave structure cradled in a groove in a silicon-on-insulator wafer.

The invention provides a terahertz radiation source based on an AZO (aluminum-doped zinc oxide) material and a testing method of the terahertz radiation source, and the terahertz radiation source comprises an AZO thin film and a pump light source. The material is characterized in that the material is composed of a substrate, an aluminum oxide (Al2O3) layer and an AZO layer. A test material needs to be excited by using a femtosecond laser with specific parameters under an oblique incidence condition, and wide-spectrum terahertz radiation with relatively high power can be generated. The invention can be used for an efficient and transparent thin film wide-spectrum terahertz source, and can be widely used for terahertz devices and related instruments and equipment.

The present invention relates to a method and a system for producing an electrically conductive layer with as homogeneous, predetermined, or defined locally different functionality as possible, in particular electrical conductivity. In the method, layer material is applied to a surface and converted into a preliminary electrically conductive layer with higher electrical conductivity by exposure, preferably to at least one energetic beam. The preliminary electrically conductive layer is then spatially resolved with at least one THz beam of continuous THz radiation. A spatially resolved electrical conductivity of this layer is determined from a reflectivity measurement of the THz beam at the preliminary electrically conductive layer.If areas in the preliminary electrically conductive layer are identified that exhibit either too low or too high electrical conductivity, these areas are then locally treated with the energetic beam to modify the electrical conductivity in order to achieve the most homogeneous, predefined, or locally variable functionality possible in the electrically conductive layer. This process enables the production of high-quality electrically conductive layers on an industrial scale.

This invention relates to a terahertz-X-ray generation device based on a free-electron laser, comprising an ultrafast laser system and, in sequence, an injector, a laser electron beam modulation system, a linear acceleration section, an X-ray radiation section, a terahertz radiation section, and an X-ray delay system. The ultrafast laser system includes an ultrafast laser, a pulse broadening and beam splitting system, a first beam splitter, and a first mirror. The ultrafast laser is configured to generate ultrafast laser pulses. The first beam splitter divides the ultrafast laser pulses into a first ultrafast laser path and a second ultrafast laser path. The first ultrafast laser path is transmitted to the injector, and the second ultrafast laser path is transmitted to the pulse broadening and beam splitting system. Upon receiving the first ultrafast laser path, the injector generates an electron beam. The pulse broadening and beam splitting system generates a double-pulse laser based on the second ultrafast laser path and transmits the double-pulse laser to the laser electron beam modulation system. The terahertz-X-rays generated by this invention exhibit high pulse energy, narrow spectral bandwidth, and good tunability.

The invention relates to a method for assembling an optical device compatible with terahertz radiation, comprising the following steps: providing first and second silicon elements each having a planar face; depositing on the planar face of the first element an adhesive having the following characteristics: a) epoxy resin curable by heat, b) Brookfield viscosity CP51, 25° C., speed 5 rpm: 50000 mPa·s±20%, and c) absence of fillers to make the adhesive electrically or thermally conductive; and applying the planar face of the second element to the adhesive deposited on the planar face of the first element.

The invention relates to a method for processing data associated with a model, the model characterising a propagation of THz radiation, for example in the region of at least one Terahertz device and / o

This invention relates to a method for generating terahertz radiation and a terahertz radiation source. In the method according to the invention, a pump beam (14) emitted from a pump beam source is incident on a block of a semiconductor nonlinear optical medium (10) having a planar parallel front boundary surface and a rear boundary surface (11, 12), wherein the pump beam (14) is decomposed into a set of sub-pump beams upon refraction on a periodic structure (13) formed by pairs of planar surfaces in the front boundary surface of the block. The sub-pump beams travel in angular directions required to satisfy velocity matching conditions. The envelope of the pump pulse leading edge segment propagating in the sub-pump beam segment propagates in a direction perpendicular to the rear boundary surface (12) (i.e., the exit surface of the optical medium (10)) at the propagation speed of terahertz radiation, and generates terahertz radiation in the semiconductor optical medium (10) by means of optical rectification to satisfy the velocity matching condition; here, is the group velocity of the pump beam (14), is the phase velocity of the generated terahertz radiation, and y is the angle between the envelope of the pulse leading edge of the pump beam (14) and the phase leading edge.

The application discloses a GaAs-based photoconductive terahertz detector and a preparation method thereof. The GaAs-based photoconductive terahertz detector comprises a negative electrode contact layer formed by ion implantation of S at the bottom of a S-doped GaAs substrate; after photoetching, plasma stripping and reactive ion etching to form photoetching alignment marks on the surface, a silicon nitride ion implantation protective layer is grown by PECVD; then, photoetching, plasma stripping and ion implantation of S are performed to form a positive electrode contact layer; after rapid thermal annealing and wet etching, a silicon nitride passivation layer is deposited on the positive electrode contact layer, and then photoetching, plasma stripping, reactive ion etching, wet etching, evaporation, electrode stripping and annealing are performed to form a positive electrode. The GaAs substrate doped with S is directly used as an absorption layer of terahertz radiation, and compared with an epitaxially grown GaAs substrate doped with S and a GaAs substrate doped with S formed by ion implantation, the GaAs substrate doped with S has the advantages of high lattice quality, large thickness, small defect density and the like, and can completely absorb terahertz radiation.

The invention relates to an emitter macro-pixel (1) for a transmission unit (2) of an imaging device (3), comprising a plurality of emitter sub-pixels (4) designed to emit electromagnetic terahertz radiation, the emitter sub-pixels (4) being arranged on a wall (6) of the emitter macro-pixel (1) in such a way that the terahertz radiation can be emitted along the surface normal of the wall (6), and the terahertz radiation emitted by the emitter sub-pixels (4) being modulated in such a way that the emitter sub-pixels (4) each emit terahertz radiation which is incoherent in relation to that emitted by the other sub-pixels. In this way, an improved resolution in terahertz imaging is provided.

The invention discloses a compact terahertz generation and detection device which comprises a pumping source, an optical wedge, a terahertz radiation generation module and an electro-optical sampling module. The pumping source generates high-power femtosecond laser; the optical wedge is arranged on an optical path of the femtosecond laser to reflect the femtosecond laser into sampling laser and transmit the femtosecond laser into pumping laser; the terahertz radiation generation module comprises a chopper, a first focus lens, a terahertz crystal, an off-axis parabolic mirror pair and a light collector which are sequentially arranged along the light path output direction of the pumping laser; the electro-optical sampling module comprises a delay line, an electro-optical crystal, a second focus lens and a self-balancing detector which are sequentially arranged in the light path output direction of the sampling laser. Femtosecond laser is reflected into laser through the optical wedge and is transmitted into pumping laser through the optical wedge, a light path of the pumping laser is used for generating terahertz radiation, and a light path of the sampling laser can collect time domain waveforms of the terahertz radiation.