24 results about "Thz radiation" patented technology

The invention provides a ferromagnetic artificial neuron film and application thereof. The ferromagnetic artificial neuron film comprises a transparent substrate and a ferromagnetic heterojunction constructed on the transparent substrate, the ferromagnetic heterojunction comprises a ferromagnetic alloy layer, a heavy metal layer and an anti-oxidation layer. Nonlinear spin oscillation of the ferromagnetic artificial neuron film is excited through femtosecond laser, terahertz radiation with intensity nonlinear response is directly generated, and the ferromagnetic artificial neuron film serves as an artificial neuron of a space optical neural network. The activation function response meeting the performance requirement of the artificial neuron can be effectively generated without introducing the regulation and control of an external magnetic field, and a better artificial neuron function facing the optical space neural network is realized.

A method for determining the thickness of a plurality of coating layers. The method comprises the steps of performing a calibration analysis on calibration data to determine initial values and search limits of optical parameters of the plurality of coating layers, irradiating the plurality of layers with a pulse of THz radiation in the range from 0.01 THz to 10 THz, detecting the reflected radiation to produce a sample response derived from the reflected radiation, producing a synthesized waveform using the optical parameters and predetermined initial thicknesses of the layers, varying the thicknesses and the optical parameters within the search limits to minimize the error measured between the sample response and the synthesized waveform, and outputting the thicknesses of the layers.

The invention relates to a THz sensor (2) for measuring an object to be measured (6), in particular, a pipe, the THz sensor (2) comprising:a THz transceiver (10) for emitting and receiving THz radiation,a lens (14) for bundling the THz radiation emitted by the THz transceiver (10) and emitting a THz transmission beam (8) along the optical axis (A) and for receiving a THz reflection beam (15),a support device (11), on which the lens (14) and / or the THz transceiver (10) is accommodated or fastened.Hereby, it is provided thata THz radiation-influencing compensation formation for modifying and / or reducing incident THz radiation is provided in a compensation area between the lens and the support device (11).

A physiological implement includes a terahertz material, a material that emits terahertz radiation in the frequency range of about 0.1-10 THz. The physiological implement may be a massage device and the massage device may be configured to vibrate, or a compression sleeve configured to extend around a limb of a person, a therapeutic composition for application to the skin of a person, a lens that is configured to extend over a light emitting device or laser, an air moving device, such as a hair dryer, a patch for application to a person's body, a sexual implement, an electronic device cover, a sleeping fabric or bag, a garment and the like.

Provided is a terahertz radiation detection device capable of efficiently detecting radiation in a long-wavelength region from far-infrared light to at or above the terahertz range. The terahertz radiation detection device includes an imaging lens, a detection element, and a filter unit. The imaging lens faces a subject. The detection element detects terahertz radiation generated from the subject among light incident through the imaging lens. The filter unit includes: a silicon substrate that is disposed closer to the subject than the detection element and absorbs visible light and near-infrared light; and a plurality of structures periodically arranged on the silicon substrate. The filter unit transmits THz radiation incident on the structures. The structures prevent the reflection of light from far-infrared light wavelengths to predetermined wavelengths including THz radiation wavelengths.

The present invention discloses a terahertz (THz) near-field fluorescence signal analysis system based on a scanning tunneling microscope (STM). The system comprises a THz radiation system, a THz transmission-characterization-modulation system, a THz coupling and fluorescence collection system, and a THz fluorescence data analysis system, all connected in sequence. The present invention enhances the ability to control THz characteristics such as polarity, carrier phase, polarization direction, intensity, and operating mode, and performs autocorrelation splitting and combining of THz beams, as well as measurement of far-field THz time-domain waveforms. By adopting a structure of a symmetrical plane mirror and an off-axis parabolic mirror that moves with the needle tip, THz can be conveniently coupled to the vicinity of the STM needle tip, and the THz incident direction can be planned in a two-dimensional plane, avoiding complex analysis in three-dimensional space. The fluorescence collection efficiency is significantly increased by designing an independent fluorescence collection structure. LABVIEW software is used to achieve synchronous analysis of THz near-field fluorescence signal measurement and STM operating system, expanding the research capabilities of THz near-field fluorescence phenomena.

A physiological implement includes a terahertz material, a material that emits terahertz radiation in the frequency range of about 0.1-10 THz. The physiological implement may be a massage device and the massage device may be configured to vibrate, or a compression sleeve configured to extend around a limb of a person, a therapeutic composition for application to the skin of a person, a lens that is configured to extend over a light emitting device or laser, an air moving device, such as a hair dryer, a patch for application to a person's body, a sexual implement, an electronic device cover, a sleeping fabric or bag, a garment and the like.

The present invention relates to a method and a system for manufacturing an electrically conductive layer having functionality, in particular electrical conductivity, which is as homogeneous as possible, specified, or locally different in a defined way. In the method, layer material is applied to a surface and is converted, by the action of preferably at least one energetic beam, into a preliminary electrically conductive layer having higher electrical conductivity. The preliminary electrically conductive layer is then scanned with at least one THz beam of continuous THz radiation, with spatial resolution. From a measurement of the reflectivity of the preliminary electrically conductive layer with respect to the THz beam, spatially resolved electrical conductivity of said layer is determined. If points in the preliminary electrically conductive layer which have too low or too high an electrical conductivity are detected, said points are then locally post-treated with the energetic beam in order to modify the electrical conductivity in order to obtain the electrically conductive layer having functionality which is as homogeneous as possible, specified, or locally different in a defined way. The method allows high-quality electrically conductive layers to be produced on an industrial scale.

An antenna comprising: input and output coaxial horn antennas coupled with a self-assembled helical slow-wave structure cradled in a groove in a silicon-on-insulator wafer.

The invention provides a terahertz radiation source based on an AZO (aluminum-doped zinc oxide) material and a testing method of the terahertz radiation source, and the terahertz radiation source comprises an AZO thin film and a pump light source. The material is characterized in that the material is composed of a substrate, an aluminum oxide (Al2O3) layer and an AZO layer. A test material needs to be excited by using a femtosecond laser with specific parameters under an oblique incidence condition, and wide-spectrum terahertz radiation with relatively high power can be generated. The invention can be used for an efficient and transparent thin film wide-spectrum terahertz source, and can be widely used for terahertz devices and related instruments and equipment.

The present invention relates to a method and a system for producing an electrically conductive layer with as homogeneous, predetermined, or defined locally different functionality as possible, in particular electrical conductivity. In the method, layer material is applied to a surface and converted into a preliminary electrically conductive layer with higher electrical conductivity by exposure, preferably to at least one energetic beam. The preliminary electrically conductive layer is then spatially resolved with at least one THz beam of continuous THz radiation. A spatially resolved electrical conductivity of this layer is determined from a reflectivity measurement of the THz beam at the preliminary electrically conductive layer.If areas in the preliminary electrically conductive layer are identified that exhibit either too low or too high electrical conductivity, these areas are then locally treated with the energetic beam to modify the electrical conductivity in order to achieve the most homogeneous, predefined, or locally variable functionality possible in the electrically conductive layer. This process enables the production of high-quality electrically conductive layers on an industrial scale.

This invention relates to a terahertz-X-ray generation device based on a free-electron laser, comprising an ultrafast laser system and, in sequence, an injector, a laser electron beam modulation system, a linear acceleration section, an X-ray radiation section, a terahertz radiation section, and an X-ray delay system. The ultrafast laser system includes an ultrafast laser, a pulse broadening and beam splitting system, a first beam splitter, and a first mirror. The ultrafast laser is configured to generate ultrafast laser pulses. The first beam splitter divides the ultrafast laser pulses into a first ultrafast laser path and a second ultrafast laser path. The first ultrafast laser path is transmitted to the injector, and the second ultrafast laser path is transmitted to the pulse broadening and beam splitting system. Upon receiving the first ultrafast laser path, the injector generates an electron beam. The pulse broadening and beam splitting system generates a double-pulse laser based on the second ultrafast laser path and transmits the double-pulse laser to the laser electron beam modulation system. The terahertz-X-rays generated by this invention exhibit high pulse energy, narrow spectral bandwidth, and good tunability.

The invention relates to a method for assembling an optical device compatible with terahertz radiation, comprising the following steps: providing first and second silicon elements each having a planar face; depositing on the planar face of the first element an adhesive having the following characteristics: a) epoxy resin curable by heat, b) Brookfield viscosity CP51, 25° C., speed 5 rpm: 50000 mPa·s±20%, and c) absence of fillers to make the adhesive electrically or thermally conductive; and applying the planar face of the second element to the adhesive deposited on the planar face of the first element.

The present invention relates to a terahertz radiation system with adjustable spatial matching between laser filamentation and a liquid medium, belonging to the field of terahertz technology. The present invention includes an excitation module for providing a pulsed laser that can achieve breakdown of the liquid medium under the focusing action of a focusing device, and the pulse energy, pulse width, focusing energy, phase, and polarization are adjustable within a certain range, a medium module for providing a circulating liquid medium with adjustable shape, size, position, and flow rate, and a monitoring module for monitoring the spatial matching condition of the focusing region. Guided by the observation of the monitoring module, the present invention realizes the optimal spatial matching between the laser focusing region and the liquid medium through the collaborative work of the excitation module and the medium module, reduces the absorption of terahertz radiation by the medium on the premise of sufficient interaction between the laser and the medium, and significantly improves the terahertz excitation efficiency.

The invention relates to a method for processing data associated with a model, the model characterising a propagation of THz radiation, for example in the region of at least one Terahertz device and / o

A system for measuring the coating thickness on a target surface includes a terahertz spectroscopy device and a reference image projector. The terahertz spectroscopy device includes a radiation head operable to project a terahertz radiation beam onto the target surface and receive the reflected beam. The reference image projector includes a visible light device and is operable to project a reference image onto the target surface using the visible light device. Visual characteristics of the reference image indicate at least one of a distance, a rotational alignment, and an angular alignment of the radiation head relative to the target surface.

Terahertz (THz) radiation detectors based on the rectification of a THz signal via the non-linear Hall effect in thin films of non-centrosymmetric layered topological semimetals are provided. The THz detectors, which enable sensitive, broadband, and fast room-temperature terahertz radiation detection, can be fabricated with electrostatic gates to tune the terahertz rectification.

A photoconductive antenna (PCA) assembly (100) for generating THz radiation is disclosed, and a photoconductive antenna (PCA) assembly (100) for generating THz radiation is disclosed. The PCA assembly (100) comprises a dielectric semiconductor substrate (110) and a plurality of metal antenna elements (120a, 120b), including a first antenna element (120a) and a second antenna element (120b), the first antenna element (120a) and the second antenna element (120b) being arranged on the semiconductor substrate (110) to define a focusing portion (130) between the first antenna element (120a) and the second antenna element (120b); furthermore, the PCA assembly (100) comprises a femtosecond laser for emitting laser radiation onto the focusing portion (130a) to produce THz radiation. A focusing portion (130a) between a first antenna element (120a) and a second antenna element (120b) includes a plurality of layers arranged on a semiconductor substrate (110) between the first antenna element (120a) and the second antenna element (120b), the plurality of layers including a first epsilon-negative (epsilonnegative, ENG) metamaterial layer adjacent to the first antenna element (120a), an intermediate epsilon-near-zero (epsilonnegative, ENG) metamaterial layer adjacent to the first antenna element (120a), and an intermediate epsilon-near-zero (epsilonnegative, ENG) metamaterial layer adjacent to the intermediate epsilon-near-zero (epsilonnegative, ENG) metamaterial layer adjacent to the intermediate epsilon-near-zero (epsilonnegative, ENG) metamaterial layer, the intermediate epsilon-near-zero (epsilonnegative, ENG) metamaterial layer. And a second antenna element (120b) adjacent to the second antenna element (120b), wherein the first antenna element (120b) and the second antenna element (120b) are arranged on the first antenna element (120b).

This invention relates to a method for generating terahertz radiation and a terahertz radiation source. In the method according to the invention, a pump beam (14) emitted from a pump beam source is incident on a block of a semiconductor nonlinear optical medium (10) having a planar parallel front boundary surface and a rear boundary surface (11, 12), wherein the pump beam (14) is decomposed into a set of sub-pump beams upon refraction on a periodic structure (13) formed by pairs of planar surfaces in the front boundary surface of the block. The sub-pump beams travel in angular directions required to satisfy velocity matching conditions. The envelope of the pump pulse leading edge segment propagating in the sub-pump beam segment propagates in a direction perpendicular to the rear boundary surface (12) (i.e., the exit surface of the optical medium (10)) at the propagation speed of terahertz radiation, and generates terahertz radiation in the semiconductor optical medium (10) by means of optical rectification to satisfy the velocity matching condition; here, is the group velocity of the pump beam (14), is the phase velocity of the generated terahertz radiation, and y is the angle between the envelope of the pulse leading edge of the pump beam (14) and the phase leading edge.

The present invention relates to the technical field of terahertz waves, and particularly relates to a THz optical comb spectroscopy detection device and method for frequency conversion and fast scanning. The device includes a signal optical comb module, a sampling optical comb module, a THz radiation generation module, a THz electro-optic sampling detection module, and a signal acquisition and processing module. The signal optical comb module and the sampling optical comb module are equipped with frequency conversion modules for frequency conversion and use the same clock signal as the signal acquisition and processing module. The THz pulse output by two 4F confocal spatial systems in the THz radiation generation module and the sampling pulse output by the second light beam focusing component are jointly input into the THz electro-optic sampling detection module for detecting the change of THz electric field. The signal acquisition and processing module is used to obtain the THz electric field change data from the THz electro-optic sampling detection module and convert it into high-resolution THz spectral information. The present invention can achieve fast frequency conversion and high-resolution THz spectral sampling.

The invention discloses a portable three-dimensional imaging security check system capable of automatic detection, belongs to security check equipment, and aims to solve the technical problems of how to realize intelligence and portability of security check, improve comprehensiveness and reliability of security check detection, reduce operation difficulty and improve security check efficiency. According to the technical scheme, the device comprises a foldable mechanical platform and an intelligent detection platform, the foldable mechanical platform comprises a conveying platform, a left supporting column and a right supporting column are arranged on the conveying platform, a supporting beam is arranged between the left supporting column and the right supporting column, and the two ends of the supporting beam are hinged to the left supporting column and the right supporting column respectively; a terahertz reflector is arranged at the end, close to the left supporting column, of the supporting beam, a terahertz radiation emission source is arranged in the middle of the right supporting column, and a terahertz linear detector is arranged at the end, close to the left supporting column, of the conveying platform.

The application discloses a GaAs-based photoconductive terahertz detector and a preparation method thereof. The GaAs-based photoconductive terahertz detector comprises a negative electrode contact layer formed by ion implantation of S at the bottom of a S-doped GaAs substrate; after photoetching, plasma stripping and reactive ion etching to form photoetching alignment marks on the surface, a silicon nitride ion implantation protective layer is grown by PECVD; then, photoetching, plasma stripping and ion implantation of S are performed to form a positive electrode contact layer; after rapid thermal annealing and wet etching, a silicon nitride passivation layer is deposited on the positive electrode contact layer, and then photoetching, plasma stripping, reactive ion etching, wet etching, evaporation, electrode stripping and annealing are performed to form a positive electrode. The GaAs substrate doped with S is directly used as an absorption layer of terahertz radiation, and compared with an epitaxially grown GaAs substrate doped with S and a GaAs substrate doped with S formed by ion implantation, the GaAs substrate doped with S has the advantages of high lattice quality, large thickness, small defect density and the like, and can completely absorb terahertz radiation.

The invention relates to an emitter macro-pixel (1) for a transmission unit (2) of an imaging device (3), comprising a plurality of emitter sub-pixels (4) designed to emit electromagnetic terahertz radiation, the emitter sub-pixels (4) being arranged on a wall (6) of the emitter macro-pixel (1) in such a way that the terahertz radiation can be emitted along the surface normal of the wall (6), and the terahertz radiation emitted by the emitter sub-pixels (4) being modulated in such a way that the emitter sub-pixels (4) each emit terahertz radiation which is incoherent in relation to that emitted by the other sub-pixels. In this way, an improved resolution in terahertz imaging is provided.

The invention discloses a compact terahertz generation and detection device which comprises a pumping source, an optical wedge, a terahertz radiation generation module and an electro-optical sampling module. The pumping source generates high-power femtosecond laser; the optical wedge is arranged on an optical path of the femtosecond laser to reflect the femtosecond laser into sampling laser and transmit the femtosecond laser into pumping laser; the terahertz radiation generation module comprises a chopper, a first focus lens, a terahertz crystal, an off-axis parabolic mirror pair and a light collector which are sequentially arranged along the light path output direction of the pumping laser; the electro-optical sampling module comprises a delay line, an electro-optical crystal, a second focus lens and a self-balancing detector which are sequentially arranged in the light path output direction of the sampling laser. Femtosecond laser is reflected into laser through the optical wedge and is transmitted into pumping laser through the optical wedge, a light path of the pumping laser is used for generating terahertz radiation, and a light path of the sampling laser can collect time domain waveforms of the terahertz radiation.