6 results about "Thz radiation" patented technology

The invention relates to a THz sensor (2) for measuring an object to be measured (6), in particular, a pipe, the THz sensor (2) comprising:a THz transceiver (10) for emitting and receiving THz radiation,a lens (14) for bundling the THz radiation emitted by the THz transceiver (10) and emitting a THz transmission beam (8) along the optical axis (A) and for receiving a THz reflection beam (15),a support device (11), on which the lens (14) and / or the THz transceiver (10) is accommodated or fastened.Hereby, it is provided thata THz radiation-influencing compensation formation for modifying and / or reducing incident THz radiation is provided in a compensation area between the lens and the support device (11).

The present invention relates to a method and a system for manufacturing an electrically conductive layer having functionality, in particular electrical conductivity, which is as homogeneous as possible, specified, or locally different in a defined way. In the method, layer material is applied to a surface and is converted, by the action of preferably at least one energetic beam, into a preliminary electrically conductive layer having higher electrical conductivity. The preliminary electrically conductive layer is then scanned with at least one THz beam of continuous THz radiation, with spatial resolution. From a measurement of the reflectivity of the preliminary electrically conductive layer with respect to the THz beam, spatially resolved electrical conductivity of said layer is determined. If points in the preliminary electrically conductive layer which have too low or too high an electrical conductivity are detected, said points are then locally post-treated with the energetic beam in order to modify the electrical conductivity in order to obtain the electrically conductive layer having functionality which is as homogeneous as possible, specified, or locally different in a defined way. The method allows high-quality electrically conductive layers to be produced on an industrial scale.

The invention provides a terahertz radiation source based on an AZO (aluminum-doped zinc oxide) material and a testing method of the terahertz radiation source, and the terahertz radiation source comprises an AZO thin film and a pump light source. The material is characterized in that the material is composed of a substrate, an aluminum oxide (Al2O3) layer and an AZO layer. A test material needs to be excited by using a femtosecond laser with specific parameters under an oblique incidence condition, and wide-spectrum terahertz radiation with relatively high power can be generated. The invention can be used for an efficient and transparent thin film wide-spectrum terahertz source, and can be widely used for terahertz devices and related instruments and equipment.

The invention relates to a method for assembling an optical device compatible with terahertz radiation, comprising the following steps: providing first and second silicon elements each having a planar face; depositing on the planar face of the first element an adhesive having the following characteristics: a) epoxy resin curable by heat, b) Brookfield viscosity CP51, 25° C., speed 5 rpm: 50000 mPa·s±20%, and c) absence of fillers to make the adhesive electrically or thermally conductive; and applying the planar face of the second element to the adhesive deposited on the planar face of the first element.

This invention relates to a method for generating terahertz radiation and a terahertz radiation source. In the method according to the invention, a pump beam (14) emitted from a pump beam source is incident on a block of a semiconductor nonlinear optical medium (10) having a planar parallel front boundary surface and a rear boundary surface (11, 12), wherein the pump beam (14) is decomposed into a set of sub-pump beams upon refraction on a periodic structure (13) formed by pairs of planar surfaces in the front boundary surface of the block. The sub-pump beams travel in angular directions required to satisfy velocity matching conditions. The envelope of the pump pulse leading edge segment propagating in the sub-pump beam segment propagates in a direction perpendicular to the rear boundary surface (12) (i.e., the exit surface of the optical medium (10)) at the propagation speed of terahertz radiation, and generates terahertz radiation in the semiconductor optical medium (10) by means of optical rectification to satisfy the velocity matching condition; here, is the group velocity of the pump beam (14), is the phase velocity of the generated terahertz radiation, and y is the angle between the envelope of the pulse leading edge of the pump beam (14) and the phase leading edge.

The invention discloses a compact terahertz generation and detection device which comprises a pumping source, an optical wedge, a terahertz radiation generation module and an electro-optical sampling module. The pumping source generates high-power femtosecond laser; the optical wedge is arranged on an optical path of the femtosecond laser to reflect the femtosecond laser into sampling laser and transmit the femtosecond laser into pumping laser; the terahertz radiation generation module comprises a chopper, a first focus lens, a terahertz crystal, an off-axis parabolic mirror pair and a light collector which are sequentially arranged along the light path output direction of the pumping laser; the electro-optical sampling module comprises a delay line, an electro-optical crystal, a second focus lens and a self-balancing detector which are sequentially arranged in the light path output direction of the sampling laser. Femtosecond laser is reflected into laser through the optical wedge and is transmitted into pumping laser through the optical wedge, a light path of the pumping laser is used for generating terahertz radiation, and a light path of the sampling laser can collect time domain waveforms of the terahertz radiation.