929results about "Analysis by material excitation" patented technology

The invention relates to the technical field of structure health monitoring, and discloses an underground pipe gallery structure corrosion monitoring and evaluation method based on optical fiber sensing, which comprises the following steps: constructing a composite optical fiber sensing structure which comprises a Fe-C alloy coated optical fiber and a long-period grating, synchronously monitoring the chemical component change and the structural mechanical state of the corrosion product through the photoluminescence spectrum characteristic peak displacement and the strain distribution cloud picture; measuring deviation caused by coating layer loss is dynamically corrected in combination with the change rate of the environment refractive index; a reference grating is embedded to eliminate temperature drift interference, and iron ion in-situ deposition is triggered to realize sensing interface self-repairing. According to the invention, through a multi-physical-quantity cooperative sensing and self-adaptive compensation mechanism, the problems of signal interruption and the like caused by difficult decoupling of chemical-mechanical parameters and film coating failure in traditional monitoring are avoided, the long-term stable monitoring capability of a corrosion process in a complex environment is remarkably improved, and high-precision data support is provided for safety assessment of an underground pipe gallery structure.

The present invention relates to the technical field of molecular interaction analysis, and specifically provides a method for analyzing intermolecular interactions. The method comprises the following steps: using a rare earth material with a ligand molecule modified on its surface as an upconversion material, contacting the upconversion material with a target molecule in a solution system, irradiating the solution system with excitation light that matches the rare earth material, and continuously changing the intensity of the excitation light actually received by the upconversion material as the target molecule continuously binds and dissociates with the ligand molecule of the upconversion material in a dynamic process, thereby changing the intensity of the emitted light. By recording the curve of the emission light intensity changing with time, the molecular interaction kinetic constants, such as the binding rate constant (K on ), dissociation rate constant (K off ) and affinity (K D ), etc., which solves the technical problems of low accuracy of existing BLI technology and high cost of SPR technology. Based on the above principles, the present invention has also developed a series of experimental consumables, kits, sensors and analytical devices for molecular interaction analysis.

Prediction of water quality parameters via monitoring, reporting, and verification sensor-geospatial fusion networks may be provided by a system comprising a plurality of separate water fixtures, wherein each of the plurality of separate water fixtures includes: an optical sensor, and a data transmission system configured to transmit sensor data from each of the plurality of separate water fixtures; and a contamination detection system configured to: receive sensor data from each of the plurality of separate water fixtures and remote sensing data; calculate changepoints within the sensor data; split the data into intervals at the changepoints; classify the intervals using a machine learning model; and identify a predicted contamination of a water source based on the classified intervals using the sensor data from a subset of the plurality of separate water fixtures and the remote sensing data to yield a near-time estimation of water quality parameters.

The invention discloses a winter wheat LAI and SPAD estimation method based on a lightweight semi-supervised model, and relates to the technical field of agricultural remote sensing monitoring, and the method comprises the steps: obtaining multispectral image data of a winter wheat key growth period, and carrying out the preprocessing of the multispectral image data to generate a standardized multichannel vegetation index image; the method comprises the following steps: constructing a lightweight semi-supervised model MCVI-SANet, and carrying out self-supervised training on the MCVI-SANet by adopting a semi-supervised training strategy driven by VICReg; and inputting the multi-channel vegetation index image into the trained MCVI-SANet, and outputting quantitative estimation results of the LAI and SPAD of the winter wheat. Through combination of a saturation perception mechanism and semi-supervised learning, estimation deviation caused by dense canopy vegetation index saturation and data noise is effectively eliminated, and the estimation precision and generalization ability in a complex agricultural scene are improved while the lightweight deployment characteristic of the model is ensured.

The invention provides a wafer defect detection system and method. The detection system comprises a first light source channel, a second light source channel, a reflection detection channel, a vertical detection channel, a scattering detection channel and a motion platform. According to the wafer defect detection system provided by the invention, large-size surface topography is measured through the reflection detection channel, and small height difference and small-diameter defects can be measured through bright field detection of the vertical detection channel; the five scattering measurement channels can simultaneously detect near-infrared, visible light, inclined incident light source, near-ultraviolet and vertical incident light source wave band energy of the wafer, and can accurately detect various defects of the wafer. Defects are identified and accurately classified, sources and evolution processes of the defects are traced, and corresponding data support is provided for improvement of a wafer manufacturing process.

An LIBS-based bauxite component quantitative detection method and a related apparatus. The method comprises: controlling an LIBS system to collect actual spectral data of bauxite under test; preprocessing the actual spectral data to obtain preprocessed actual spectral data; on the basis of the preprocessed actual spectral data, extracting corresponding feature elements to be detected, said feature elements comprising one or more of information about feature wavelengths to be detected, information about element wavelengths to be detected, and information about remaining wavelengths to be detected; and, on the basis of said feature elements and a quantitative detection model, determining component information of said bauxite.

A short-wave infrared photothermal (SWIP) microscopy system and method for vibrational imaging of a sample generates shortwave infrared excitation light probe light. The excitation light and the probe light are combined to generate a combined beam, which is focused to generate a focused combined beam, which is directed onto the sample to obtain a SWIP signal generated by absorption-induced thermo-optic selective heating of the sample. The SWIP signal is collected through an aperture in a condenser and detected.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and / or magnetic field biases can be applied to the sample to provide additional information.

Semiconductor metrology systems based on directing radiation on a wafer, detecting second harmonic generated (SHG) radiation from the wafer and correlating the second harmonic generated (SHG) signal to one or more electrical properties of the wafer are disclosed. The disclosure also includes parsing the SHG signal to remove contribution to the SHG signal from one or more material properties of the sample such as thickness. Systems and methods described herein include machine learning methodologies to automatically classify obtained SHG signal

The invention discloses wafer mass detection equipment and method.The wafer mass detection equipment comprises an equipment front-end module, a detection platform, a photoluminescence detection module and a control module, and a plurality of wafer carrier boxes of different sizes are arranged in a stepped mode in the equipment front-end module and used for containing wafers of different sizes; the test positions of different sizes in the detection platform are used for placing wafers on the wafer carrier box, the first detection module is used for detecting the placement positions of the wafers at the test positions, and the control module controls the equipment front-end module to place the wafers at the corresponding test positions according to the sizes of the wafers by obtaining the wafers of different sizes in the wafer carrier box. According to the invention, the detection platform is provided with the photoluminescence detection module, the placement position of the wafer at the test position is obtained, the wafer on the detection platform is controlled to focus with the photoluminescence detection module, and the photoluminescence detection module is controlled to detect the wafer based on the preset imaging detection parameters of the wafer, so that the detection requirements of LED wafers of different specifications are met, and the LED wafer detection efficiency is improved.

A system and methods for characterizing a semiconductor sample by terahertz (THz) time-domain spectroscopy (TDS), the system configured to implement methods including: directing an optical pump pulse, having one or more optical pump parameters, onto a region of the sample, thereby inducing a transient change within the region; directing a terahertz (THz) probe pulse to the region of the sample at a controlled time delay relative to the optical pump pulse; detecting the THz response signal from the transmission or reflection of the THz probe pulse from the region of the sample; and determining from the THz response signal at least one characteristic of the sample indicated by the transient change induced by the optical pump pulse..

The invention provides imaging equipment based on multi-photon depth imaging and an imaging probe thereof, and a miniaturized imaging probe is realized by adopting a split type structure. In the imaging process, the imaging probe can be fixedly connected with an imaging object, the multi-photon effect is excited in the imaging object through the exciting light, so that optical signals in the imaging object are collected, and the internal situation in the imaging object is detected. Particularly, a plurality of input optical fibers are arranged in the imaging probe, laser of multiple wavelengths is provided at the same time in the multi-photon imaging process, optical signals can comprise optical signal components responding to exciting light of different wavelengths at the same time, and different internal structures are excited and detected at the same time. Besides, in the probe, the laser of each wavelength is subjected to beam combination treatment through the coupling module to form composite laser, so that the subsequent treatment of the composite laser is similar to that of exciting light, and the internal structure of the imaging probe is further simplified.

The invention discloses an aptamer sensor based on a bimetallic organic framework nano-enzyme as well as a preparation method and application of the aptamer sensor. According to the aptamer sensor, the catalytic activity of the bimetallic organic framework nano-enzyme is simply and conveniently regulated through an aptamer, so that colorimetric and photo-thermal dual-mode detection on kanamycin is realized; the aptamer can regulate and control the activity of the bimetal organic framework nano-enzyme through co-incubation without immobilization, the aptamer falls off from the surface of the nano-enzyme to generate signal response by utilizing the high selective affinity of kanamycin to the aptamer, and a temperature signal is generated by further utilizing the photothermal effect of an oxidation product. Therefore, the comparison of color and photo-thermal double-signal detection results is realized, and the credibility of the detection results is improved.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and / or magnetic field biases can be applied to the sample to provide additional information.

The invention provides a method for measuring magneton dispersion of an antiferromagnetic thin film material based on a terahertz spectrum. According to the method, a ferromagnetic metal layer sample, an antiferromagnetic layer sample, a heavy metal layer sample and a three-layer film structure sample are prepared, laser pulses are used for inducing the samples to emit terahertz spectra, an electro-optical sampling technology is combined for measurement, and contribution of magneton transmission to the terahertz spectra is separated through data processing. The invention aims to solve the problem that the magneton dispersion property of an antiferromagnetic thin film material cannot be measured in real time at low cost in the prior art. Compared with a traditional method, the method has the advantages of being wide in frequency spectrum range, high in wave number resolution ratio, free of contact and low in cost, and is suitable for different types of antiferromagnetic materials. The method provides a theoretical basis and an experimental basis for researching the spin dynamic characteristics of an antiferromagnetic material and developing a high-frequency spintronics device. The method effectively fills the technical blank in the field of magneton measurement of the antiferromagnetic material.

A method for indicating a sanitation status of a surface may comprise contacting a coating on a surface with a cleaning composition, wherein the coating comprises a chromic material and exhibits a baseline optical state under illumination with light having a first wavelength prior to contact with the cleaning composition and an altered optical state under illumination with light having a second wavelength after contact with the cleaning composition, the cleaning composition configured to induce a switch from the baseline optical state to the altered optical state; and illuminating the coating with the first wavelength of light, the second wavelength of light, or both, to reveal a sanitation status of the surface. Systems for indicating a sanitation status of a surface are also provided.

The invention discloses a method for measuring the intrinsic carrier mobility of a semiconductor material, and relates to the technical field of semiconductor material performance measurement. The method comprises the following steps: establishing a measurement system for the intrinsic carrier mobility of the semiconductor material; using an optical delay line to continuously change the relative time delay between the probe light and the pump light, obtaining the light intensity of the probe light under the action of the pump light and without the action of the pump light, testing to obtain a transient reflection dynamic spectrum of the semiconductor material, and extracting to obtain a Brillouin oscillation signal; calculating an electron deformation potential, a hole deformation potential and a semiconductor material elastic modulus based on the Brillouin oscillation signal; and calculating the intrinsic carrier (electron and hole) mobility of the semiconductor material based on the electron deformation potential, the hole deformation potential and the elastic modulus of the semiconductor material. Aiming at the lack of a method for experimentally measuring the intrinsic carrier mobility of a material at present, the measurement method disclosed by the invention fills the blank in the field.

Systems and methods are provided for analyzing a biomechanical property of a medium using stimulated Brillouin scattering microscopy. The method can include a first step of applying a probe beam and pulsed pump beam to a target section of the medium, wherein the pump beam interacts with the probe beam to generate at least one acoustic wave in the medium and at least one Brillouin signal is produced as a result of the generated acoustic wave. The method can also include a second step of receiving the produced Brillouin signal and a third step of determining, using a processor and the Brillouin signal, information associated with at least one biomechanical property of the target section.

The invention relates to the field of laser detection, in particular to a sample mechanism for marine corrosion primary process detection, which comprises a sample box, a sample loading device for placing a sample plate is arranged in the sample box, and one side of the sample box is provided with an excitation interface and a detection interface. The upper portion of the communication port is connected with a three-way connector, the other two connectors of the three-way connector are used for air exhaust and water dripping respectively, the connector for air exhaust is connected with a vacuumizing pump, and the connector for water dripping is matched with a plugging cover. And the water dripping joint is connected with a water dripping pipe matched with a sample plate on the sample loading device. The communicating port is matched with the three-way joint, so that the vacuumizing operation can be completed through the communicating port, and meanwhile, the dripping operation can also be completed, so that the sample plate simulates a sample environment in which seawater is immersed, and a more accurate detection effect can be obtained.

The invention discloses a multicolor pathology detection system, a detection analysis method and a controller. The multicolor pathology detection system comprises a control module, and a light source module, a light splitting module, a microscopic module, a detection module and an imaging module which are electrically connected with the control module respectively. The light source module emits at least two kinds of exciting light with different wavelengths, the light splitting module guides the exciting light with the target wavelength to the microscopic module, light signals of various markers can be detected at the same time, and the detection efficiency is high. A to-be-processed electric signal is obtained after feedback light signals with different wavelengths are detected through the detection module, imaging is carried out through the imaging module, fluorescence signals of multiple different fluorescence markers and / or corresponding bright field signals can be detected at the same time, and therefore multi-dimensional detection is carried out, the application range is wide, complex molecular characteristics of a to-be-detected sample can be captured, and the detection accuracy is high. The invention can be widely applied to the optical technical field.

The invention belongs to the technical field of microbiological detection, and discloses a composite probe for detecting salmonella enteritidis and a preparation method. The composite probe for detecting the salmonella enteritidis comprises magnetic nanoparticles FeO, wherein the surface of the magnetic nanoparticles FeO is modified with an aptamer apt which is specifically combined with the salmonella enteritidis; the surface of the long afterglow nano particle PLNPs is modified with a DNA (Deoxyribose Nucleic Acid) sequence cDNA (Complementary Deoxyribonucleic Acid) complementary with the aptamer; the aptamer apt and the complementary DNA sequence cDNA are subjected to hybridization to form a composite probe structure FeO-SEapt (at) PLNPs-cDNA (complementary deoxyribonucleic acid). The long afterglow luminescence characteristic of PLNPs (ZnGaO: Cr) is utilized, and an excitation light source is stopped before detection, so that signal acquisition completely avoids autofluorescence of a sample matrix, background fluorescence interference is thoroughly eliminated, and the signal-to-noise ratio is remarkably improved.

A squeezed light generator may include a triply-coupled optical resonator having a triplet resonance with a split-resonant frequency spacing Ω, where the triplet resonance receives light at frequencies associated with at least one split-resonant frequency in the triplet resonance and generates squeezed light with at least another split-resonant frequency in the triplet resonance.

The invention discloses a preparation method of a standard quartz sample for calibration of a luminescence dating instrument, and relates to the technical field of luminescence dating, and the preparation method comprises the following steps: preparing a quartz glass front wall, a quartz glass rear wall and an annular pad; placing an annular pad between the quartz glass front wall and the quartz glass rear wall, and placing a quartz sample in a central hole of the annular pad to obtain a loading appliance which completes loading; wrapping the loading device with an aluminum foil, placing the loading device on a special support, and placing the loading device at the measurement point of the reference radiation field; measuring the air kerma at the measuring point; calculating a conversion coefficient from air kerma energy to quartz absorbed dose; calculating the absorbed dose of the quartz sample; evaluating the uniformity of the quartz sample by using a luminescence dating instrument and adopting a single-factor variance analysis method; and evaluating the stability of the quartz absorbed dose by adopting a mode of taking out at different times after irradiation and respectively measuring and reading. According to the invention, the loading of the standard quartz sample is more convenient, and the obtained dosage is more accurate.

The invention relates to a method for detecting a marine corrosion primary process, which comprises the following steps of: constructing three vacuum chambers and connecting the three vacuum chambers by using vacuum pipelines to form a detection system; ultrafast femtosecond laser with the repetition frequency being 1 kHz, the single pulse energy being 6 mJ, the pulse width being 35 fs and the central wavelength being 800 nm is generated through a pulse amplifier; one beam of 2mJ enters a vacuum chamber pipeline to be transmitted as a pulse light beam for detection in the original process of ocean corrosion, the other beam of 4mJ is transmitted outside the vacuum chamber to be used as a pump pulse light beam, and 400 nm pump pulse laser is generated through frequency doubling of a BBO crystal; the pump light beam and the detection light beam are incident on a sample of a sample mechanism in the third vacuum chamber, then the pump light beam is blocked, and only the detection light beam is incident on the sample; xUV light beams reflected from the sample are subjected to spectral dispersion and then enter a CCD detector, and the dynamic response of the sample after being excited by the pump light is monitored by measuring the transmissivity, reflectivity or absorption change of the surface of the sample.

The invention relates to the technical field of semiconductors, in particular to a photoluminescence detection method for dislocation density in silicon, which comprises the following steps: preparing a plurality of silicon samples with known dislocation density, and acquiring photoluminescence spectrums of the silicon samples under standardized photoluminescence test parameters; a dislocation eigenpeak in a photoluminescence spectrum is identified; calculating the ratio of the intensity of the dislocation eigenpeak to the intensity of the silicon eigenfree exciton peak, and carrying out weighted summation on each ratio to obtain a comprehensive signal value; establishing a function relationship between the dislocation density and the comprehensive signal value; obtaining a photoluminescence spectrum of the silicon sample under the standard photoluminescence test parameters; identifying a dislocation eigenpeak and a free exciton peak of the silicon sample, and calculating an actual ratio of the two intensities; calculating an actual comprehensive signal value according to the actual ratio, and calling the function relation to obtain dislocation density; based on the PL technology, high-precision, lossless and rapid quantitative detection of the dislocation density in silicon can be realized, and the method has important industrial application value.

The present invention relates to methods for determining the quantity of an analyte in sample using lateral flow strips comprising highly-doped upconversion nanoparticles.

The embodiment of the invention provides a method for determining initial parameters of a transient absorption spectrum kinetics curve, and the method comprises the steps: obtaining an initial absorption point and an absorption attenuation termination point of the transient absorption spectrum kinetics curve, and determining a curve segment between the initial absorption point and the absorption attenuation termination point as a total absorption attenuation interval; carrying out weighting processing on a first-order derivative and a second-order derivative of the transient absorption spectrum dynamic curve to obtain a weighted curvature value sequence; the first N-1 weighted curvature values are selected from the weighted curvature value sequence from large to small, and the total absorption attenuation interval is divided into N absorption attenuation intervals corresponding to curve fitting orders according to sampling points corresponding to the first N-1 weighted curvature values; and determining an initial parameter based on a quantitative relationship of 1 / e of the absorption intensity attenuated to the corresponding interval starting point in each absorption attenuation interval in the exponential fitting model, wherein the quantitative relationship is that the absorption intensity at the interval starting point in each absorption attenuation interval is attenuated to the absorption intensity at the corresponding interval starting point. And the fitting efficiency and accuracy of the dynamic curve are improved.

The invention relates to a heterogeneous insulation interface parameter testing method and device based on broad-spectrum photoelectric emission, and the method comprises the steps: applying metal electrodes with different work functions to to-be-tested samples of two single-layer materials forming heterogeneous insulation, and obtaining a single-layer material photoelectric emission current spectrum; analyzing the photoelectric emission current spectrums of the single-layer materials to obtain parameters of the two single-layer materials forming heterogeneous insulation; applying metal electrodes with different work functions to a heterogeneous insulation composite sample formed by tightly attaching two single-layer materials forming heterogeneous insulation to obtain a total photoelectric emission current spectrum of the heterogeneous insulation composite sample; separating according to the total photoelectric emission current spectrum of the heterogeneous insulation composite sample to obtain an intermediate interface photoelectric emission current spectrum; and analyzing the photoelectric emission current spectrum of the intermediate interface, and calculating to obtain a real contact potential barrier between the two single-layer materials forming the heterogeneous insulation. Compared with the prior art, high-precision measurement of heterogeneous insulation interface parameters is realized.

The invention provides a single-pixel detection device with a flexible and variable measurement view field, and an optical detection system and method. The single-pixel detection device comprises a view field diaphragm, a focusing lens and a single-pixel detector, the view field diaphragm is arranged in a detection light path of the measured target, is a view field diaphragm with a flexible and variable measurement view field, can automatically adjust the shape of the measurement view field according to the shape of the measured target, obtains the measurement view field completely matched with the shape of the measured target, and outputs an output light beam with the same shape as the measured target; and the focusing lens is arranged in an output light path of the field diaphragm and is used for focusing an output light beam of the field diaphragm to the single-pixel detector, so that the single-pixel detector detects a signal of the detected target. According to the single-pixel detection device with the flexible and variable measurement view field and the optical detection system provided by the invention, the view field diaphragm is introduced into the detection light path, and the measurement view field of the view field diaphragm can be flexibly adjusted, so that flexible, simple and accurate single-pixel detection on measured targets with different shapes in optical detection is realized.

The invention discloses a photovoltaic cell panel invisible defect detection device based on multispectral imaging. The photovoltaic cell panel invisible defect detection device comprises a photovoltaic cell panel to be detected; the excitation module is configured to enable the photovoltaic cell panel to be detected to generate a short-wave infrared band under the irradiation of an excitation light source; the excitation light source comprises a near-infrared light-induced excitation light source and / or an electroluminescent driving power supply; the spectrum acquisition module comprises a multispectral imaging system composed of a variable optical filter and an area-array camera, the variable optical filter adopts a wavelength programmable narrow-band filtering assembly, and the transmission wavelength of the variable optical filter covers a 1050-1250 nm characteristic spectrum band; and the image acquisition and processing system is configured to control switching of spectrum channels of the variable optical filter, control the area-array camera to shoot multispectral images in sequence and process the images. The device overcomes the adverse effect of the sunlight environment on photoluminescence imaging or electroluminescence imaging of the photovoltaic cell panel, so that the imaging level of invisible defects of the photovoltaic cell panel is improved.