18 results about "Charge-coupled device" patented technology

A 3D CCD based imager, comprising: a photosensitive layer, comprising a plurality of pixels to perform photoelectric conversion; a CCD gate stack, configured to store and transfer charge; and a readout layer, configured to read out a signal representative of the charge stored in the CCD gate stack. The CCD gate stack comprises: a plurality of gate layers and a plurality of spacer layers, which are alternatingly arranged one on the other along a first direction; a plurality of channels extending in the CCD gate stack along the first direction, for forming a plurality of strings of charge storage capacitors; and a plurality of dielectric layers extending in the CCD gate stack along the first direction, configured to isolate the plurality of channels from the plurality of gate layers.

This invention provides a dynamic beam quality measurement device based on a fast deflecting mirror and a microlens group, comprising a first fast deflecting mirror, a second fast deflecting mirror, a microlens group, a focusing lens, and a charge-coupled device (CCD) camera arranged sequentially along the optical path. The first fast deflecting mirror reflects the laser beam to be measured onto the second fast deflecting mirror, and the second fast deflecting mirror reflects the laser beam modulated by the first fast deflecting mirror to the centers of different microlenses within the microlens group. The microlens group consists of multiple microlenses. The focusing lens is arranged in the transmission optical path of the microlens group, and the CCD camera is arranged at the focal point of the focusing lens in the transmission optical path of the focusing lens. In this invention, a single image acquired by the CCD camera can capture the distribution of four laser beam spots focused by lenses with different focal lengths. Combined with the high-speed deflection of the two fast reflecting mirrors, dynamic measurement of laser beam quality can be achieved while ensuring measurement accuracy.

A charge transfer element (10) according to the present invention includes a substrate (101), a lower insulating film (102), a semiconductor channel (12), and an upper insulating film (103) in this order in the direction perpendicular to the surface of the substrate, and also includes a first gate (14) and a second gate (15), which are disposed in the lower insulating film or the upper insulating film, a source region (11) electrically connected to one end of the semiconductor channel, and a drain region (13) electrically connected to the other end of the semiconductor channel. The first gate and the second gate are disposed above the semiconductor channel to be in parallel in the direction in which the semiconductor channel extends, the source region includes a p-type semiconductor or a n-type semiconductor, and the drain region includes a semiconductor of a conductivity type opposite to the conductivity type of the source region.　Thus, the present invention can provide a charge transfer element enabling the selection between electrons and holes and capable of transferring a single charge by a single element.

The invention relates to a charge-coupled device (CCD) memory. Specifically, the present disclosure provides a design and contact scheme for a three-dimensional (3D) integrated CCD memory, which may be a multi-phase CCD memory. The 3D CCD memory includes a stack including a plurality of gate layers and spacer layers alternately arranged one above the other along a first direction; a plurality of semiconductor-based channels extending in the stack. The channel is combined with the gate layer and one or more gate dielectric layers to form a plurality of charge storage capacitor strings operable as a plurality of CCD registers. A plurality of contact vias extend in the stack. Each contact via is associated with one of a plurality of groups of non-intersecting gate layers, and is electrically connected to all of the gate layers of the group associated therewith, where at least one group includes two or more gate layers.

A CCD comprises: a primary device configured to capture visible light and comprising: a first layer comprising a first semiconductor material; and a second layer comprising a second semiconductor material; and a secondary device configured to capture near-IR light and comprising: a third layer comprising a third semiconductor material and positioned such that the second layer is between the first layer and the third layer; and a fourth layer comprising a fourth semiconductor material and positioned such that the third layer is between the second layer and the fourth layer.

The present invention relates to a method for preparing and applying copper-iodine cluster-based microcube scintillator and thin film, which is a microcube scintillator capable of generating ionizing radiation excitation emission. The microcube scintillator comprises a copper-iodine cluster-based microcube scintillator doped in a substrate layer. The chemical formula of the copper-iodine cluster-based microcube scintillator is C 18 H 38 Cu4I6N4. The substrate layer is a polymer with high light transmittance, excellent chemical stability and good mechanical properties. Another aspect of the present invention is an ionizing radiation imaging system, in which the microcube scintillator is placed behind the digital camera of the substrate layer doped with the microcube scintillator. The photodetector can be any of the following. Typically, the photodetector is a photomultiplier tube (PMT) detector, a thin film transistor (TFT) photodiode sensor, a charge-coupled device (CCD) sensor, a complementary metal-oxide-semiconductor (CMOS) sensor or an indium gallium zinc oxide (IGZO) TFT sensor.

The application provides a laser vibration measuring device suitable for 0.1mHz-10kHz, which comprises a laser light source, a first polarization beam splitter prism, a second polarization beam splitter prism, a quarter-wave plate, a beam splitter, a first mirror, a second mirror, a frequency modulation device, a charge coupled device camera and a photoelectric detector arranged along an optical path in sequence. The laser vibration measuring device suitable for 0.1mHz-10kHz of the application uses a high-precision charge coupled device camera to measure the vibration parameters of a low-frequency vibrating object by measuring the interference fringes of light and dark, uses a photoelectric detector to measure the Doppler frequency shift to obtain the vibration parameters of a high-frequency vibrating object, and no matter whether the obtained vibration parameters are displacement or velocity, the vibration frequency can be converted through a mathematical relationship to realize vibration measurement, can be applied to the vibration measurement of most vibrating objects under the premise of ensuring good measurement accuracy, and thus the range of vibration measurement is greatly improved.

The present disclosure relates to a three-dimensional (3D) integrated charge-coupled device (CCD) block addressable storage class memory (SCM). The 3D CCD memory includes a layer stack including a plurality of gate layers and spacer layers alternately arranged one above the other along a first direction. The memory also includes a plurality of semiconductor-based channels extending in the stack, where the channels in combination with the gate layer and the one or more dielectric layers form a plurality of charge storage capacitor strings operable as a plurality of CCD registers. The memory includes a plurality of blocks, where each block includes a plurality of sub-blocks, and where each sub-block includes a set of CCD registers. Each block and each sub-block of the block are individually selectable in order to write information into at least one CCD register of the sub-block of the block.

A kind of calibration wafer and method for determining metrology positioning deviation, comprising: providing calibration wafer, which is provided with metrology monitor pad capable of being used for optical ellipsometric measurement, the film layer thickness of metrology monitor pad linearly changes in at least one preset direction;Calibration wafer is loaded to wafer bearing component, and linear scanning is carried out to target metrology monitor pad along preset direction using optical ellipsometric measurement equipment, to obtain the fitting regression line of film thickness with the change of scanning position, the theoretical center coordinates of target metrology monitor pad are obtained by fitting regression line;Charge-coupled device camera field of view center is positioned to theoretical center coordinates, and the actual thickness of film at theoretical center coordinates of target metrology monitor pad is obtained, the actual center coordinates corresponding to actual thickness of film are obtained by substituting actual thickness of film into fitting regression line, and the actual center coordinates are obtained based on actual center coordinates and theoretical center coordinates to obtain metrology positioning deviation.The method can significantly improve the calibration accuracy and reliability of optical ellipsometric measurement system.

This invention relates to a pulse-broadened transient Raman detection system for studying electrocatalytic processes at electrodes, belonging to the field of Raman spectroscopy technology. It includes a resistor, digital oscilloscope, computer, electrochemical workstation, signal generator, femtosecond laser, silver mirror one, silver mirror two, crystal, dichroic mirror, pulse broadener, aperture, narrowband filter, silver mirror six, Raman filter one, reflection to aperture, objective lens, pulse delayer, silver mirror seven, Raman filter two, cemented doublet lens, electrolytic cell, and charge-coupled device. Its advantages lie in using transient Raman spectroscopy with a pulse broadener, combined with electrical excitation and time-resolved measurement methods during the electrochemical reaction process, to detect reaction intermediates on and around the electrode surface with high temporal and spatial resolution. It can detect Raman signals of reaction intermediates on the electrode surface on a femtosecond timescale, thus providing a new approach to understanding the mechanism of electrocatalytic reactions.

The invention relates to the technical field of wafer processing, and discloses a coaxial automatic focusing method, which comprises the following steps: forming a damage point on the surface of a wafer by using a laser focus; the focusing F axis is moved upwards in the Z direction, a target adjusting module is adjusted, observation is performed through a coaxial charge-coupled device until the target is imaged clearly, and the difference value between the coordinate of the focusing F axis and the coordinate of the focusing F axis of a damage point formed by focusing of a laser focus on the surface of the wafer when the cross-shaped target forms a clear image in air above the surface of the wafer is recorded; in the wafer machining process, the focusing F axis is driven to move in the Z direction, image matching is carried out through the coaxial charge-coupled device so as to identify the coordinate position f2'of the focusing F axis of clear imaging of the target, and an actual wafer machining point is obtained based on interpolation. According to the invention, switching between confocal and non-confocal of the laser focus and the cross-shaped target focus can be realized, and the problem that the brightness of the front electrode of the ultrathin wafer interferes with automatic focusing pattern recognition in a visual confocal scheme can be solved.

The application discloses a kind of alkali metal atom polarization systems based on holographic light field regulation, which can realize the modulation of amplitude, phase and polarization of polarized light field simultaneously, increase the light field regulation capacity, and provide the basis for the development of high-precision atomic spin magnetic field measurement device, characterized by, including the holographic signal light path and the holographic reference light path arranged on the pumping light incident side of alkali metal cell, the first charge-coupled device and the second charge-coupled device arranged on the pumping light exit side of alkali metal cell, the holographic signal light is incident to the first charge-coupled device after passing through the alkali metal cell, the holographic reference light is emitted to the second charge-coupled device after crossing with the holographic signal light in the alkali metal cell, and the first charge-coupled device and the second charge-coupled device are respectively connected to the data acquisition and processing system.

The utility model provides an optical fiber liquid fluorescence concentration measuring device. The optical fiber liquid fluorescence concentration measuring device comprises a cassette, an amplifying circuit, a pull-out switch, an exciting light path, a clustered optical fiber probe, a collecting light path and a cuvette, the excitation light path comprises a semiconductor laser, a narrow-band filter and an excitation optical fiber, and the collection light path comprises a collection optical fiber, a lens support group, two lenses, a dichroscope, a light trap and a silicon photodiode. According to the utility model, the forked optical fiber structure is adopted to form a non-confocal optical path structure, and the photomultiplier replaces a charge-coupled device to serve as a detector, so that compared with the prior art, various inconveniences brought by a large-scale optical instrument in the use process are avoided. In the device provided by the utility model, the optical fiber with the forked structure is adopted, and the excitation end and the collection end are separated, so that the problem of steric hindrance is solved, and the influence of excitation light on collected signals is reduced. The device is small in size, easy to move, low in cost and more suitable for actual use.

Three-dimensional stacked image sensors and method for making three-dimensional stacked image sensors are provided. A method includes attaching a first CCD side of a charge-coupled device (CCD) pixel array wafer to a first carrier side of a first carrier wafer and performing a first thinning procedure on a second CCD side of the CCD pixel array wafer while the CCD pixel array wafer is attached to the first carrier wafer. The method includes forming a passivation layer on the thinned surface of the CCD pixel array wafer and temporarily bonding a second carrier wafer to the passivation layer. The method includes performing a second thinning procedure on the second carrier side of the first carrier wafer while the second carrier wafer is bonded to the passivation layer. After performing the second thinning procedure, through-silicon vias (TSVs) are formed through the first carrier wafer.

This application relates to the field of biomimetic neurotechnology and proposes a pluggable biomimetic optical neural network system with adaptive sensing capabilities. The system includes a laser source, a pinhole amplifier, a digital micromirror device, a beam splitter prism unit, a photodetector, a pluggable metasurface structure, a spatial light modulator (SLM), a mirror, and a digital camera with a charge-coupled device (CCD) image sensor. This application can adjust the state of the pluggable metasurface structure according to the contrast of the input image light, and adaptively extract high-frequency information of the object based on the contrast of the surrounding environment, thereby improving the accuracy of target recognition tasks. Furthermore, the activation level of neurons in the diffraction layer can be updated in real time based on the initial classification result of the input image light, improving the dynamic adaptive adjustment capability of visual attention, and thus achieving adaptive adjustment to the perceived target.

The application provides a partial-coherence vortex beam topological charge measuring device and method based on light intensity analysis, which comprises the following steps: a solid laser emits laser light; a linear polarizer selects horizontal direction polarized light; a first lens focuses the polarized light; a frosted glass scatters the focused light to obtain incoherent light; a second lens collimates the partial-coherent light; a Gaussian filter shapes the collimated light to obtain a Gaussian Schell mode beam; a spatial light modulator modulates the Gaussian Schell mode beam to obtain a first Gaussian Schell mode vortex beam; a screening unit screens the first Gaussian Schell mode vortex beam to obtain a second Gaussian Schell mode vortex beam; a fifth lens focuses the second Gaussian Schell mode vortex beam to obtain a third Gaussian Schell mode vortex beam; and a charge-coupled device collects the light intensity diagram of the third Gaussian Schell mode vortex beam, and the size and sign of the topological charge are obtained according to the light intensity diagram. The size and sign of the topological charge of the Gaussian Schell mode vortex beam are analyzed through the light intensity diagram.

The present disclosure relates to a 3D integrated CCD memory, such as a storage class memory. The CCD memory includes a stack of layers including a plurality of gate layers and spacer layers alternately arranged one above the other. The CCD memory also includes a plurality of semiconductor-based channels extending in the stack, where the channels in combination with the gate layer and the one or more gate dielectric layers form a plurality of strings of charge storage capacitors operable as a plurality of CCD registers. One end of each CCD register is connected to the floating diffusion region. The CCD memory also includes a plurality of charge sensing circuits. Each charge sensing circuit is connected to the floating diffusion region of the at least one CCD register and is configured to convert charge in the floating diffusion region of the at least one CCD register into a voltage on the associated column line.