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A transducer structure (100) for an acoustic device comprising a piezoelectric layer (104), a pair of inter-digitated comb electrodes (108, 110), comprising a plurality of electrode means (112_1, 112_2, 112_3, 112_4, 114_1, 114_2, 114_3, 114_4) with a pitch p satisfying the Bragg condition given by p= lambda / 2, lambda being the operating acoustic wavelength of said transducer, characterized in that the inter-digitated comb electrodes (108, 110) are embedded in the piezoelectric layer (104) and the acoustic impedance of the electrode means is less than the acoustic impedance of the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The invention relates also to a acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating said transducer structure. The invention relates also to the use of the frequency of the bulk wave propagating in the electrode means of said transducer structure in an acoustic wave device to generate contribution at high frequency, in particular above 3GHz.