482results about How to "Reduced life-time" patented technology

A method of forming an interconnect for a semiconductor device using triple hard layers, comprises: forming a first hard layer serving as an etch stop layer on a metal interconnect-formed dielectric layer; forming a second hard layer on the first hard layer; forming a dielectric layer on the second hard layer; forming a third hard layer on the dielectric layer; forming a hole through the third and second hard layers, the dielectric layer, and the first hard layer; and filling the hole with metal to establish an interconnect. The second and third hard layers are each made of carbon-doped silicon oxide formed from a source gas and a redox gas, while controlling the carbon content in the second hard layer as a function of a flow rate of the redox gas.

A plurality of organic EL elements which are arranged on a display panel lowers the brightness along with a lapse of light emitting time and hence, the power consumption is increased to maintain the brightness. However, the increase of the power consumption shortens a lifetime of the organic EL elements. To overcome this drawback, a power supply circuit which drives the display panel has a function of controlling an electric power supplied to the display panel to a fixed value or less in response to a detection signal from a detection part which detects a cathode current of the organic EL elements.

It is an object of the present invention to provide a silicon solar cell with n⁺pp⁺ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate. The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.

An apparatus for forming at least one three-dimensional article by fusing parts of a powder bed layer-wise. The apparatus comprising a powder distributor and an energy beam for fusing the powder layer. Said powder distributor comprises a first part being an elongated rod provided movable at a predetermined distance above the powder bed and with its central axis in parallel with a top surface of said work table and second part being a metal foil having at least a first and a second opposite edge portions. Said metal foil is provided between said elongated rod and said work table, said first and second opposite edge portions are attached to said elongated rod so that a distance between said first and second edge portions is smaller than the distance between said first and second edge portions of said metal foil when said metal foil is in a flat position.

For the high spatial resolution imaging of a structure of interest in a specimen, a substance is selected from a group of substances which have a fluorescent first state and a nonfluorescent second state; which can be converted fractionally from their first state into their second state by light which excites them into fluorescence, and which return from their second state into their first state; the specimen's structure of interest is imaged onto a sensor array, a spatial resolution limit of the imaging being greater (i.e. worse) than an average spacing between closest neighboring molecules of the substance in the specimen; the specimen is exposed to light in a region which has dimensions larger than the spatial resolution limit, fractions of the substance alternately being excited by the light to emit fluorescent light and converted into their second state, and at least 10% of the molecules of the substance that are respectively in the first state lying at a distance from their closest neighboring molecules in the first state which is greater than the spatial resolution limit; and the fluorescent light, which is spontaneously emitted by the substance from the region, is registered in a plurality of images recorded by the sensor array during continued exposure of the specimen to the light.

A series of Pt(II) complexes having the following formula are disclosed:

• • X₁ and X₂ independently are C or N, X₁ can also locate at another position of the hexagonal ring, when X₁ is N;
  • R₁ is H, C1–C8 alkyl, or C1–C4 perfluoroalkyl, R₂ is H, R₁ and R₂ together are C4–C8 alkylene, or R₁ and R₂ together are bridged carbocyclic C4–C12 alkylene, when X₂ is C;
  • R₁ is H, C1–C8 alkyl, or C1–C4 perfluoroalkyl, and R₂ is omitted, when X₂ is N;
  • R₇ is H or methyl, and R₈ is omitted, when X₁ is N;
  • R₇ is H or methyl, R₈ is H or methyl, or R₇ and R₈ together are

when X₁ is C.

The present invention discloses an amorphous material comprising nickel oxide doped with tantalum that is an anodically coloring electrochromic material. The material of the present invention is prepared in the form of an electrode (200) having a thin film (202) of an electrochromic material of the present invention residing on a transparent conductive film (203). The material of the present invention is also incorporated into an electrochromic device (100) as a thin film (102) in conjunction with a cathodically coloring prior art electrochromic material layer (104) such that the devices contain both anodically coloring (102) and cathodically coloring (104) layers. The materials of the electrochromic layers in these devices exhibit broadband optical complimentary behavior, ionic species complimentary behavior, and coloration efficiency complimentary behavior in their operation.

An illumination system includes a plurality of radiation generating sources, such as LED dies. A corresponding plurality of optical waveguides is also provided, with each waveguide having a first and a second end, with each first end being in optical communication with the corresponding LED die. An array of corresponding passive optical elements is interposed between the plurality of LED dies and the corresponding first ends of the plurality of optical waveguides. The illumination system provides for substantially high light coupling efficiency and an incoherent light output that can appear to the human observer as arising from a single point of light. In addition, the light can be output remotely at one or more locations and in one or more directions.

In a head for thermal assisted magnetic recording device, a semiconductor laser is mounted so that the total height of the head does not become larger and light power fluctuation due to wavelength fluctuation occurs less frequently. In addition, the rise in temperature of the mounted semiconductor laser is suppressed. A semiconductor laser is placed on a side surface which is different from surfaces on an inflow end side and a trailing side, of four side surfaces of a floating slider. An entrance of a waveguide is placed on the side surface of the floating slider, to thereby cause emitted light from the semiconductor laser to directly enter the waveguide. A curved line part or a reflective mirror is formed in the middle of the waveguide so that the light which has entered the waveguide travels toward an optical near-field generating element.

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

The invention provides compositions and methods for the preparation of processed adipose tissue. The invention further provides methods of use of the processed adipose tissue.

The present invention relates to a flexible electrothermal composite. In one embodiment, a flexible electorthermal composite includes a flexible polymer matrix and a number of carbon nanotubes dispersed in the matrix, the carbon nanotubes forming a plurality of conductive network in the polymer. The flexible electrothermal composite has high flexibility, resistance and intensity.

A luminescent display device includes a substrate and a thin-film transistor above the substrate. The thin-film transistor includes a semiconductor layer, a gate insulating film on the semiconductor layer, a gate electrode on the gate insulating film, a source electrode, and a drain electrode. The luminescent display device further includes an interlayer insulating film on the gate electrode, a first capacitor electrode on the interlayer insulating film in a region above the gate electrode, and a luminescent element configured to be driven by a driver to produce luminescence. The driver includes the thin-film transistor, and the first capacitor electrode and the gate electrode constitute a capacitor.

A front surface element structure is formed on the front surface side of an n⁻-type semiconductor substrate. Then defects are formed throughout an n⁻-type semiconductor substrate to adjust a carrier lifetime. Hydrogen ions are ion-implanted from a rear surface side of the n⁻-type semiconductor substrate, and a hydrogen implanted region having a hydrogen concentration higher than a hydrogen concentration of a bulk substrate is formed in the surface layer of a rear surface side of the n⁻-type semiconductor substrate.

A modular and/or segmented magnetic bar for magnetron sputtering targets is provided. A magnet bar is made up of a plurality of magnet segments aligned in a substantially linear manner. One or more magnet bars may be provided. The positions of the magnet segments may be selectively adjusted to, for example, adjust magnetic field(s), replace magnet segment(s) that have been broken or damaged, and so forth.