51results about How to "Reduce recovery loss" patented technology

A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor substrate, when a region operating as an IGBT device is an IGBT region and a region operating as a diode device is a diode region, the IGBT and diode regions are arranged alternately in a repetitive manner; a damaged region is arranged on a surface portion of the diode region in the semiconductor substrate. The IGBT and diode regions are demarcated by a boundary between the collector and cathode layers; and a surface portion of the IGBT region includes: a portion having the damaged region at a boundary side with the diode region; and another portion without the damaged region arranged closer to an inner periphery side relative to the boundary side.

A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.

A diode includes: a first semiconductor layer of a first conductive type; a second semiconductor layer of a second conductive type arranged adjoining to the first semiconductor layer; a third semiconductor layer of the first conductive type arranged on a side, opposite to the second semiconductor layer, of the first semiconductor layer, and contains a dopant of the first conductive type at a higher concentration than the first semiconductor layer; a first electrode ohmically connected to the second semiconductor layer; a second electrode ohmically connected to the third semiconductor layer; and a fourth semiconductor layer arranged at a position adjoining to the third semiconductor layer between the first and third semiconductor layers, contains a dopant of a type being the same as a type of the dopant of the first conductive type contained in the third semiconductor layer, and has a carrier lifetime shorter than the third semiconductor layer.

An exhaust gas heat recovery device of the present invention recovers heat of an exhaust gas from an internal combustion engine. The exhaust gas heat recovery device includes an exhaust pipe that leads the exhaust gas from an upstream side to a downstream side, a cylindrical shell that covers an outside of the exhaust pipe, and an exhaust gas heat recovery section that is interposed between the exhaust pipe and the cylindrical shell and that performs heat exchange between the exhaust gas and a heat exchange medium. The exhaust gas heat recovery section includes a stacked body that is composed by stacking a plurality of jacket each having a heat exchange medium conduit provided thereinside. In the stacked body, the respective heat exchange medium conduits in the plurality of jacket parts are serially connected to each other.

The invention provides a method for increasing the concentration of a gas easy to adsorb by using a pressure swing adsorption method. The method comprises the following steps: (1) feeding a raw material gas into a first adsorption tower, and performing adsorption operation till an adsorbent is saturated; (2) performing pressure equalizing operation on a first adsorption tower after adsorption; (3)introducing a product gas into an unadsorbed gas for exchange, and blowing an exchanged gas into other adsorption towers; (4) performing pressure equalizing operation on the first adsorption tower after exchange for a second time; (5) performing vacuum desorption on the first adsorption tower so as to obtain a product gas; (6) pressurizing the first adsorption tower after desorption. Through theprocedures, multiple adsorption towers cooperate to achieve concentration increase of the gas easy to adsorb, particularly the product gas is adopted as an exchange gas, the exchanged gas is fed intoother adsorption towers, and pressure equalizing operation is implemented after exchange, so that not only is the exchange effect improved, but also the concentration and the recycling rate of a component easy to adsorb can be increased.

An inverter device for a solar module. The inverter device comprises a slave circuit device that includes an input comprising a DC input from a solar cell group and a preliminary boost circuit. A DC boost circuit is coupled to the preliminary boost circuit and configured to boost the intermediary voltage to an AC RMS peak voltage. A rectifier circuit is coupled to the DC boost circuit. An energy recovery circuit comprises a storage device coupled to the rectifier output. The energy recovery circuit is configured to temporarily store a reverse recovery charge and transfers the reverse recovery charge to an output of a DC bus structure to reduce a diode recovery loss in the rectifier circuit.

A controller CT1 switches on a first switch SW1, and the direct-current voltage given from a power source BAT flowing through a first inductor L1 is smoothed by a capacitor C1 and is output from an output terminal OUT1. After a specified period of time has elapsed since the first switch SW1 was turned off by the controller CT1, the second switch SW2 and the third switch SW3 are turned on approximately at the same time. The electric current which was flowing through the first inductor L1 is branched into the second switch SW2 and the third switch SW3, and the electric current flowing through the parasitic diode Dp1 of the second switch SW2 is reduced. As a result, when the second switch SW2 is turned off, the recovery current flowing through the parasitic diode Dp1 is reduced.

In plan view of an RC-IGBT, a boundary region has an occupancy rate of an n⁺-type source layer per unit area, the occupancy rate being smaller than an occupancy rate of the n⁺-type source layer per unit area in an IGBT region, and the boundary region has an occupancy rate of a p⁺-type contact layer per unit area, the occupancy rate being smaller than an occupancy rate of the p⁺-type contact layer per unit area in an IGBT region.

A method for treating a lithium ion battery waste according to the present invention is a method for treating a lithium ion battery waste using a converter furnace in a copper smelting process, wherein, prior to a treatment for charging a copper mat produced in a flash smelter in a copper smelting process into a converter furnace and blowing oxygen into the converter furnace to produce crude copper, the lithium ion battery waste is introduced into the converter furnace or a ladle that is used for the charging of the copper mat into the converter furnace and then the lithium ion battery waste is burned with residual heat in the converter furnace or the ladle.

A semiconductor device includes an IGBT as a switching element, and a diode. The IGBT includes: a p type channel doped layer formed in a surface layer part on a front side of a semiconductor substrate; a p⁺ type diffusion layer and an n⁺ type source layer individually selectively formed in a surface layer part of the p type channel doped layer; and an emitter electrode connected to the n⁺ type source layer and the p⁺ type diffusion layer. A part of the p type channel doped layer reaches a front-side surface of the semiconductor substrate and is connected to the emitter electrode. On the front-side surface of the semiconductor substrate, the p⁺ type diffusion layer is interposed between the p type channel doped layer and an n⁺ type source layer, and the p type channel doped layer and the n⁺ type source layer are not adjacent to each other.