51results about How to "Reduce recovery loss" patented technology

A semiconductor device includes: a substrate having a first side and a second side; an IGBT; and a diode. The substrate includes a first layer, a second layer on the first layer, a first side N region on the second layer, second side N and P regions on the second side of the first layer, a first electrode in a first trench for a gate electrode, a second electrode on the first side N region and in a second trench for an emitter electrode and an anode electrode, and a third electrode on the second side N and P regions for a collector electrode and a cathode. The first trench penetrates the first side N region and the second layer, and reaches the first layer. The second trench penetrates the first side N region, and reaches the second layer.

A semiconductor device in which both an IGBT element region and a diode element region exist in the same semiconductor substrate includes a low lifetime region, which is formed in at least a part of a drift layer within the diode element region and shortens the lifetime of holes. A mean value of the lifetime of holes in the drift layer that includes the low lifetime region is shorter within the IGBT element region than within the diode element region.

A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on / off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources.

The invention provides a diode that can reduce recovery loss in a simple way without accompanied voltage withstand decreases and additional procedures. The diode includes: a first semiconductor layer (101) of a first conductive type; a second semiconductor layer (102) of a second conductive type arranged adjoining to the first semiconductor layer (101); a third semiconductor layer (104) of the first conductive type which is arranged on a side, opposite to the second semiconductor layer (12), of the first semiconductor layer (101), and contains a dopant of the first conductive type at a higher concentration than the first semiconductor layer (101); a first electrode (107) ohmically connected to the second semiconductor layer (102); a second electrode (108) ohmically connected to the third semiconductor layer (104); and a fourth semiconductor layer (106) which is arranged at a position adjoining to the third semiconductor layer (104) between the first and third semiconductor layers (101, 104), contains a dopant of a type which is the same as a type of the dopant of the first conductive type contained in the third semiconductor layer (104), and has a carrier lifetime shorter than the third semiconductor layer (104).

An inverter device for a solar module. The inverter device comprises a slave circuit device that includes an input comprising a DC input from a solar cell group and a preliminary boost circuit. A DC boost circuit is coupled to the preliminary boost circuit and configured to boost the intermediary voltage to an AC RMS peak voltage. A rectifier circuit is coupled to the DC boost circuit. An energy recovery circuit comprises a storage device coupled to the rectifier output. The energy recovery circuit is configured to temporarily store a reverse recovery charge and transfers the reverse recovery charge to an output of a DC bus structure to reduce a diode recovery loss in the rectifier circuit.