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161results about How to "Increase potential difference" patented technology

Gallium nitride-based hetero-junction field effect transistor with back electrode structure

The invention discloses a gallium nitride-based hetero-junction field effect transistor with a back electrode structure. The gallium nitride-based hetero-junction field effect transistor mainly consists of a substrate, an aluminum nitride nucleating layer, a P-type aluminum-indium-gallium-nitrogen buffering layer, a gallium nitride channel layer, an aluminum nitride inserting layer and an aluminum-indium-gallium-nitrogen barrier layer in sequence from bottom to top; a source electrode, a drain electrode and a gate electrode are formed on the barrier layer; the source electrode and the drain electrode form ohmic contact with the barrier layer; the gate electrode and the barrier layer are in Schottky contact; and the gallium nitride-based hetero-junction field effect transistor further comprises the back electrode in contact with the substrate. The back electrode in the gallium nitride-based hetero-junction field effect transistor provided by the invention modulates potential distribution of a device buffering layer, so as to increase potential difference between the two-dimensional electron gas channel and the P-type aluminum-indium-gallium-nitrogen buffering layer. Therefore, two-dimensional electron gas in the channel and the P-type impurities in the buffering layer are entirely consumed, so that the electric field distribution of the device channel is more uniform, and the breakdown voltage of the device is improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Device and method for processing semiconductor material through backward multifocal lasers and electrochemistry in combined manner

The invention provides a device and method for processing a semiconductor material through backward multifocal lasers and electrochemistry in a combined manner. The energy, frequency and wavelength of the lasers are regulated, and a multifocal laser beam acts on the back face of a semiconductor sample; on one hand, when the lasers radiate the back face of the semiconductor sample, a large amount of light can be stimulated in the semiconductor sample to generate holes, the holes move to the position of the surface of the polished semiconductor sample to participate in the electrochemistry reaction, and material corrosion removal is achieved; and on the other hand, on the back face of the semiconductor sample, the multifocal lasers gradually conduct processing inwards. A work electrode is a cathode, the semiconductor sample is used as an anode, and when the potential between the two electrodes is high, spark discharge processing is conducted; and when the potential is low, electrochemistry erosion removal is conducted. The multifocal lasers and electrochemistry act on the semiconductor sample in the combined manner, the corrosion efficiency is improved, and the surface quality of through holes is improved. When the high-precision micro-through-holes are processed in the semiconductor material, the combination effect is good in action effect, and the device and the method are suitable for precise processing.
Owner:JIANGSU UNIV

Test structure and test method

The invention provides a test structure. The test structure comprises a substrate layer and a plurality of discrete first inter-layer metal layers, wherein the first inter-layer metal layers are in electrical connection with a plurality of first contact plugs; and the test structure further comprises a continuously distributed second inter-layer metal layer, wherein the second inter-layer metal layer is in electrical connection with the first inter-layer metal layers through a plurality of second contact plugs. According to the invention, the first inter-layer metal layers are connected to a big second inter-layer metal layer through the second contact plugs, thus, the effect of grounding is realized, and potential difference of the surface of the first contact plugs after the metal is in broken line connection is enhanced; and based on the principle of voltage contrast of a scanning electron microscope, light and shade degree of the first contact plugs can be observed from the back of a wafer so as to reflect whether the first contact plugs are contacted well with the first inter-layer metal layers, thus, locations of defect can be found quickly, process defects can be reflected, and the aim of early defect monitoring is realized.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Preparation method of nanometer iron-copper-carbon micro electrolysis material for organic waste water treatment

The present invention discloses a preparation method of a nanometer iron-copper-carbon micro electrolysis material for organic waste water treatment. The preparation method comprises: mixing acrylic acid and water; adding copper-iron hydrotalcite particles to the acrylic acid solution, wherein per g of the copper-iron hydrotalcite particles is corresponding to 3-5 mmol of the acrylic acid, and the copper-iron hydrotalcite particles are screened through a 20-50 mesh sieve; adding ammonium persulfate, heating, washing with deionized water, drying, grinding, and screening through a 20-40 mesh sieve to obtain powder; heating the obtained powder under a vacuum condition to 600-700 DEG C, and carrying out calcination for 2-4 h; adding 2-4 g of the resulting product into a flask, adding 20 ml of deionized water, introducing N2 to carry out protection, stirring, then adding a KBH4 solution, and carrying out continuous stirring; and carrying out centrifugation separation, and carrying out constant temperature drying for 5-6 h at a temperature of 60-70 DEG C under N2 protection to obtain the nanometer iron-copper-carbon micro electrolysis material for organic waste water treatment, wherein an activated surface area can be increased, pollutants can be absorbed, a nanometer effect of the nano-scale iron-copper-carbon can be provided, and oxidation efficiency can be improved.
Owner:HUAWEI TEHCHNOLOGIES CO LTD

Display panel, driving method thereof and display device

The embodiment of the invention discloses a display panel, a driving method thereof and a display device. The display panel comprises a pixel circuit and a light-emitting element, the pixel circuit comprises a light-emitting control module, a driving module and a compensation module. The light-emitting control module comprises a first light-emitting control module, and the first light-emitting control module is used for selectively providing a first power supply signal for the driving module; the driving module is used for providing driving current for the light-emitting element and comprisesa driving transistor; the compensation module is used for compensating the threshold voltage of the driving transistor; the working process of the pixel circuit comprises a light-emitting stage and abias stage; and in the bias stage, the first light-emitting control module and the driving module are turned on, the compensation module is turned off, the driving transistor and the light-emitting element are disconnected, and a first power signal is written into the drain of the driving transistor from the source of the driving transistor and used for adjusting the bias state of the driving transistor. The embodiment of the invention weakens the threshold voltage drift of the driving transistor.
Owner:XIAMEN TIANMA MICRO ELECTRONICS
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