209 results about "Plasma heating" patented technology

Off-gas from a carbon black furnace is employed as a combustion gas feed stream to the burner or combustion zone of the same or a different carbon black furnace in accordance with certain embodiments, suitable conduit and valving is provided to pass off-gas, from which carbon black has been substantially removed, from any and all of multiple different carbon black furnaces to the burner. The off-gas is heated, preferably by plasma heating, and dewatered. Carbon dioxide stripping or rather stripping of gas components from the dewatered heated off-gas is found to be unnecessary to achieve economically favorable use of off-gas recirculation.

Off-gas from a carbon black furnace is employed as a combustion gas feed stream to the burner or combustion zone of the same or a different carbon black furnace in accordance with certain embodiments, suitable conduit and valving is provided to pass off-gas, from which carbon black has been substantially removed, from any and all of multiple different carbon black furnaces to the burner. The off-gas is heated, preferably by plasma heating, and dewatered. Carbon dioxide stripping or rather stripping of gas components from the dewatered heated off-gas is found to be unnecessary to achieve economically favorable use of off-gas recirculation.

The present invention provides a system for converting the residue of a carbonaceous feedstock gasification or incineration process into an inert slag and a gas having a heating value. The residue is converted by plasma heating in a refractory-lined residue conditioning chamber. The gas produced is optionally passed through a gas conditioning system for cooling and cleaning to provide a product gas that is suitable for use in downstream applications. The system also comprises a control subsystem for optimizing the conversion reaction

Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

The invention discloses novel technology for continuously producing nano powder by using ultra-high temperature plasma and a preparation process thereof. The technology is implemented by a device consisting of an electrical control system, a vacuum pumping and measuring system, an gas charging system, an ultra-high temperature plasma heating, evaporating and pulverizing system, a high air-flow cooling and circulating system, a water cooling and circulating system, a nano powder supplementing and collecting system, a powder cleaning system and a vacuum packaging and storing system. High vacuum is adopted in the embodiment of the invention and the method comprises the following steps of: directly heating metal powder by using the ultra-high temperature plasma to form metal vapor quickly; and colliding the metal vapor quickly with high air-flow gas molecules to make the metal vapor loose energy and form clusters by using the high air-flow cooling and circulating system and water cooling circulation, and condensing the clusters into the nano metal powder. Metal hydride nano powder, metal nitride nano powder, metal oxide nano powder and pure metal nano powder can be produced by using different protective gases. Compared with the prior art, the nano metal powder produced by the method has the advantages of difficult agglomeration, simple process, high purity, convenient operation and maintenance, low production cost, easy realization of large-scale industrial production and wide popularization.

The invention relates to an ellipsoidal high-power microwave plasma diamond film deposition device which is composed of a staisecase annular microwave coupled system, an annular quartz microwave window arranged at the staircase of an annular antenna, an ellipsoidal microwave resonant cavity, an adjustable deposition table, a conical upper reflecting body, an adjustable cylindrical lower reflecting body, an inlet and outlet, a temperature measurement hole, a view window and the like. By utilizing the design of the ellipsoidal upper and lower focal points, the conical upper microwave reflecting body is positioned on the upper focal point, the deposition table is positioned on the lower focal point, and the electric field is distributed centrally, so the excited plasma has high position stability and high density; the hidden microwave window can be protected from plasma heating, pollution and etching; the adjustable microwave lower reflecting body and the deposition table optimize the plasma distribution in real time; the inner wall of the ellipsoidal resonant cavity is far from the high-temperature plasma region, so that the heat radiation of the plasma to the inner wall of the cavity is reduced, thereby avoiding depositing foreign matters; and all the components of the device are cooled with water. The device can implement high-efficiency deposition of a large-area high-quality diamond film under the condition of high power.

The invention relates to a plasma heating device, in particular to a plasma heating decomposer. The plasma heating decomposer is composed of an anode sleeve, an anode, a cathode substrate, a cathode and an insulating frame, wherein the anode is of a horn-shaped revolution solid structure, a diffusion cavity is formed in a horn-shaped inner space, a compression pore channel is formed by a throat at the rear end of the diffusion cavity, the anode is embedded into the anode sleeve, and a water jacket b is formed by the space between the outer wall of the anode and the anode sleeve; the cathode substrate is of a revolution solid structure with the center shaft protruding forwards, the cathode is embedded into the inner space of the center shaft of the cathode substrate, and a water jacket a is formed by space between the outer wall of a rod body of the cathode and the inner wall of the center shaft of the cathode substrate; the insulating frame is a connecting component between the anode sleeve and the cathode substrate, the anode sleeve is installed at the front end of the insulating frame, the cathode substrate is installed at the rear end of the insulating frame, a shrinking cavity is formed by the space between the front end of the center shaft of the cathode substrate and the compression pore channel at the rear end of the anode, and the head end of the cathode is arranged in the shrinking cavity. The plasma heating decomposer is suitable for production lines for hydrogen production through water pyrolysis or for treatment of hazardous substance and protects the ecological environment.

A high frequency induction plasma heating wind tunnel is used for a nonequilibrium thermal environment and deep space exploration research. The heating wind tunnel comprises a plasma generator, a jet pipe, a test segment, a diffusion segment, a cooler, a vacuum set and an assisting system. Working gas is heated by the plasma generator, acts on a model of the test segment under the effect of the jet pipe, and is discharged outside via the vacuum set by being pressurized by the diffusion segment and cooled by the cooling segment. The high frequency induction plasma heating wind tunnel is a ground simulation apparatus that can provide a chemically pure, high temperature and high speed air flow environment, and can meet requirements of gas components for deep space exploration research.

The problems of the prior art are overcome by the apparatus and method disclosed herein. The reactor vessel of a plasma gasifier is operated at high pressure. To compensate for the negative effects of high pressure, various modifications to the plasma gasifier are disclosed. For example, by moving the slag, more material is exposed to the plasma, allowing better and more complete processing thereof. In some embodiments, magnetic fields are used to cause movement of the slag and molten metal within the vessel. An additional embodiment is to add microwave heating of the slag and / or the incoming material. Microwave heating can also be used as an alternative to plasma heating in a high pressure gasification system.