382results about How to "Efficient deposition" patented technology

Disclosed are a method and apparatus that use an electric field for improved biological assays. The electric field is applied across a device having wells, which receive reactants, which carry a charge. The device thus uses a controllable voltage source between the first and second electrodes, which is controllable to provide a positive charge and a negative charge to a given electrode. By controlled use of the electric field charged species in a fluid in a fluid channel are directed into or out of the well by an electric field between the electrodes. The present method involves the transport of fluids, as in a microfluidic device, and the electric field-induced movement of reactive species according to various assay procedures, such as DNA sequencing, synthesis or the like.

An implant for bone replacement and attachment in an animal's body including, a structural portion having an outer porous surface, a ceramic material applied to the porous surface of the structural portion, characterised in that the thickness of the ceramic material as applied utilizing pulsed pressure MOCVD is such that at least some of the pores of the porous surface are not completely closed.

A nanopost glass array contains up to 1012/cm2 of magnetizable nanoposts having diameter of 10-1000 nm that are straight and parallel to each other and are typically of a uniform diameter relative to each other and along the post length. The array is made using a reference electrode and a nanochannel glass template structure connected to each other electrically through an electrical source and both disposed in a plating solution. A magnetizable material is electroplated from the plating solution into the channels of the template structure.

A technique for forming an organic polymer thin film on a surface of a substrate with high film formation efficiency and excellent reproducibility and stability is provided. When a vacuum deposition polymerization for forming an organic polymer thin film is performed on a surface of a substrate 12 repeatedly, in which a plurality of kinds of monomers evaporated in a plurality of evaporation source containers 32a, 32b in vacuum state are introduced into a deposition chamber 10 in a vacuum state and polymerized on a surface of the substrate 12 arranged in the deposition chamber 10, each of the monomers in a liquid form is present in the evaporation source containers 32a, 32b in a constant amount every time, at the beginning of the evaporation operation of monomers.

The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours.

Porous ceramic catalyst supports or filters to be provided with catalyst coatings via oxide washcoating processes are pre-coated with polymer barrier layers to prevent washcoat nanoparticle intrusion into the microcracked and/or microporous surfaces of the ceramics, the barrier coatings being formed of hydrocarbon polymers that are soluble or dispersible in polar media, capable of forming neutral or hydrophilic surfaces on porous ceramic supports, and completely vaporizable at moderate washcoat stabilization or catalyst activation temperatures.

The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates.

A system is disclosed for delivering packages by a delivery person in a location with multiple recipients comprising a plurality of lockers, each locker having an interior space and a door that when opened allows access to the interior space, a locking portion associated with each door, a central control unit comprising an identifier to allow the delivery person to specify a recipient, an input device to allow the delivery person to specify the number of packages to be delivered to the recipient, and a controller configured to deactivate the locking portions on the individual lockers, wherein upon identification of a recipient and input of the number of packages to be delivered to the recipient, the controller deactivates the number of locking portions equal to the number of packages to be delivered to the recipient, and the delivery person places a package in each locker opened and closes the door.

A molecular plasma discharge deposition method for depositing colloidal suspensions of biomaterials such as amino acids or other carbon based substances onto metal or nonmetal surfaces without loss of biological activity and/or structure is described. The method is based on generating a charged corona plasma which is then introduced into a vacuum chamber to deposit the biomaterial onto a biased substrate. The deposited biomaterials can be selected for a variety of medical uses, including coated implants for in situ release of pharmaceuticals.

Copper plating baths containing a leveling agent that is a reaction product of a certain imidazole with a certain epoxide-containing compound that deposit copper on the surface of a conductive layer are provided. Such plating baths deposit a copper layer that is substantially planar on a substrate surface across a range of electrolyte concentrations. Methods of depositing copper layers using suchcopper plating baths are also disclosed. A reaction product of one or more nitrogenous compounds and one or more epoxy compounds indicated in formula 1 or 2 is also provided, wherein Y1 and Y2 are selected from H and (C1 - C4) alkyl group. Z is Ar, R12OarOR12, (R13O)aAr (OR13)A, Cy, R12CyR12 or (R13O)aCy(OR12)A; r=1-4; Ar=(C6-C18) aryl group; Cy=(C5-C12) naphthenic group; each R12 indicates (C1-C8) alkyl group; each R13 indicates (C2-C6) alkylene oxygen group; each a=1-10; and A indicates C5-C12 naphthenic group.

A developing device includes: a developer carrying member for supplying a developer to an image bearing member at an opposing region opposing to the image bearing member, the developer carrying member being arranged so as to be opposed to the image bearing member on which an electrostatic latent image is to be formed; a blade for regulating an amount of the developer carried on the developer carrying member; a casing for housing the developer carrying member and the blade, the casing including a wall portion opposed to the developer carrying member between the blade and the opposing region; a sheet member that is flexible, provided on the wall portion, has a free end, forms a part of an inner wall surface of the wall portion, and is movable in a direction perpendicular to the inner wall surface; and a moving portion provided on the wall portion, for moving the sheet member.

A device for applying a cosmetic product to the human body, constituted by at least one first column, which is arranged in an open space and is provided with a plurality of nozzles whose height can be adjusted for spraying a beneficial or cosmetic product that has been electrically precharged. The device further comprises a stand for the user, which is connected electrically to the ground at the post-positioning regions.

Provided is a sputtering target of nonmagnetic-particle-dispersed ferromagnetic material comprising a phase (A) such that nonmagnetic particles are dispersed in a ferromagnetic material formed from a Co—Cr alloy containing 5 at % or more and 20 at % or less of Cr and Co as the remainder thereof, and schistose textures (B) with a short side of 30 to 100 μm and a long side of 50 to 300 μm formed from a Co—Cr alloy phase in the phase (A); wherein each of the foregoing nonmagnetic particles has such a shape and size that the particle is smaller than all hypothetical circles with a radius of 1 μm around an arbitrary point within the nonmagnetic particle, or a shape and size with at least two contact points or intersection points between the respective hypothetical circles and the interface of the ferromagnetic material and the nonmagnetic material. Consequently, obtained is a high-density sputtering target of nonmagnetic-particle-dispersed ferromagnetic material whose crystal grains are fine, which realizes improvement of PTF (pass through flux) of the target, high-speed deposition with a magnetron DC sputtering system, reduction in the particles (dust) and nodules generated during the sputtering process, minimal variation in quality, and improvement of mass productivity.

An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure.

By forming an additional stressed dielectric material after patterning dielectric liners of different intrinsic stress, a significant increase of performance in transistors may be obtained while substantially not contributing to patterning non-uniformities during the formation of respective contact openings in highly scaled semiconductor devices. The additional dielectric layer may be provided with any type of intrinsic stress, irrespective of the previously selected patterning sequence.

The invention relates to a preparation method of a visible light catalyst with a surface plasmon effect and application thereof. The active component of the visible light catalyst is a precious metal Au, and the carrier is one of TiO2, CeO2, Nb2O5, SiO2, Ta2O5, Al2O3 and ZrO2, wherein, Au accounts for 0.2-5% in mass content, and the particle size of Au particle is 2-20nm. Preparation of the catalyst consists of two steps: the first step is to prepare a carrier; the second step is to prepare an Au/TiO2 (CeO2, SiO2, Al2O3, Nb2O5, Ta2O5, ZrO2) visible light catalyst with a plasmon effect througha sol precipitation method. Au nanoparticles prepared by the method of the invention have good dispersibility, easily controllable size, high active component utilization rate, as well as the effect of high efficiency photocatalytic degradation of organic pollutants by visible light.

In a bearing device, a double row rolling bearing for supporting a pinion gear-side portion of a pinion shaft on a case (annular wall) is formed by a tandem-type double row angular contact ball bearing. A first row of balls having a larger pitch circle diameter are disposed between inner and outer rings of the double row angular contact ball bearing at a region near to the pinion gear, and a second row of balls having a smaller pitch circle diameter are disposed between the inner and outer rings at a region remote from the pinion gear. A bearing internal space is divided into a first bearing internal space containing the first ball row and open toward the pinion gear and a second bearing internal space containing the second ball row and sealed by partition walls formed respectively by bearing seals, lubricating grease being sealed in the second bearing internal space.

Material erosion of trench isolation structures in advanced semiconductor devices may be reduced by incorporating an appropriate mask layer stack in an early manufacturing stage. For example, a silicon nitride material may be incorporated as a buried etch stop layer prior to a sequence for patterning active regions and forming a strain-inducing semiconductor alloy therein, wherein, in particular, the corresponding cleaning process prior to the selective epitaxial growth process has been identified as a major source for causing deposition-related irregularities upon depositing the interlayer dielectric material.