157 results about "Plasma deposition" patented technology

The invention discloses a photoresist micro-lens array preparation method and system, and relates to the field of micro-nano optical device manufacturing. The preparation method of the photoresist micro-lens array comprises the following steps: carrying out chemical mechanical polishing treatment on a silicon wafer, spin-coating photoresist on a substrate to form a cylindrical array, and eliminating solvent gradient through pre-drying; forming a fluorocarbon nano film on the surface of the photoresist through plasma deposition so as to reduce the surface energy of the photoresist; realizing hot reflux of the photoresist based on gradient annealing, wherein the gradient annealing comprises a preheating section, a main reflux section and a stable section; on the basis of the preheating section, glass transition stress is avoided, fluorine-containing gas and inert gas are synchronously introduced into the main backflow section to act on a plasma sheath layer, so that the flowing direction of photoresist is regulated and controlled, and the edge coffee ring effect is inhibited; the stable section synchronously performs plasma assistance to lock the shape; and the precision and the consistency of the micro-lens array are improved through segmented temperature regulation and control and a plasma auxiliary technology.

The invention relates to a mixed cathode for ion plasma deposition systems and methods. A cathode (200) for use in an ion deposition process includes a body (202) defining a working surface (204) of the cathode; and at least one insert (218) coupled to the body. The body comprises a first deposited material, and the at least one insert comprises a second deposited material that is incompatible with the first deposited material. The at least one insert is at least partially exposed at the working cathode surface. The first deposition material and the second deposition material are capable of evaporating in response to an arc generated at the working cathode surface for depositing a coating comprising the first deposition material and the second deposition material on a substrate.

To provide a method for performing gap filling of a feature on a substrate, and a gas supply system for supplying a process gas to a process chamber for an ALD process and plasma processing.SOLUTION: A method for performing gap fill of a feature on a substrate includes the following operations: (a) moving the substrate into a process chamber; (b) performing a plurality of cycles of an ALD process; (c) purging process gases from the ALD process from the process chamber; (d) performing a plasma treatment on the substrate by introducing a fluorine- containing gas into the process chamber and applying RF power to the fluorine-containing gas to generate a fluorine plasma in the process chamber; (e) purging process gases from the plasma treatment from the process chamber; (f) repeating the operations (b) through (e) until a predefined number of cycles are performed.SELECTED DRAWING: Figure 4

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Methods and apparatuses for depositing silicon nitride using a plasma over low-k dielectric material while protecting the low-k dielectric material are provided. The methods comprise providing a substrate having a dielectric material deposited thereon, depositing a protective layer on the dielectric material in a plasma-free environment, and after depositing the protective layer, exposing the substrate to a first plasma to deposit a first silicon nitride while converting at least a portion of the protective layer to second silicon nitride.

The invention relates to multi-process coating equipment. The multi-process coating equipment comprises a feeding cavity; an inlet of the heating cavity is operably communicated with an outlet of the feeding cavity; the plurality of process cavities are connected in series and are operably communicated, and the inlet of the first process cavity is operably communicated with the outlet of the heating cavity; an inlet of the discharging cavity is operably communicated with an outlet of the last process cavity; and the vacuum system is in operable communication with the feeding cavity, the heating cavity, the plurality of process cavities and the discharging cavity. In addition, the invention further relates to a film coating method adopting the multi-process film coating equipment. The device can support more than three coating processes for one-time deposition, has the characteristics of convenience in feeding and discharging, high coating speed, high coating quality and the like, does not generate plasmas in the coating process, is high in deposited film quality, and does not generate harmful gases at the same time.

The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.

One example provides a fabrication tool comprising a chamber, a pedestal electrode and a showerhead electrode arranged in the chamber, one or more gas inlets into the chamber, a vacuum pump system, a radiofrequency (RF) power source configured to form an RF plasma between the pedestal electrode and the showerhead electrode, and a controller comprising a processor and memory. The memory comprises instructions executable by the processor to operate the flow control hardware to introduce a hydrogen-containing reducing agent and a hydrocarbon gas into the chamber, and to operate the RF power source to form a plasma between the pedestal electrode and the showerhead electrode to fully deposit a carbon plug in a recess of a workpiece positioned on a pedestal within the chamber in a single plasma deposition cycle with no intermediate carbon removal process.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

The invention discloses a manufacturing method of a TCO thin film and a manufacturing method of a heterojunction cell, and relates to the technical field of photovoltaics. The manufacturing method of the TCO film comprises the following steps: manufacturing the first transparent conductive layer on the substrate by adopting an atomic layer deposition process, and depositing the second transparent conductive layer on the first transparent conductive layer by adopting a physical vapor deposition process or a rapid plasma deposition process. The atomic layer deposition process is low in reaction temperature and has no damage to the base material. The physical vapor deposition process or the rapid plasma deposition process is carried out on the first transparent conductive layer, even if the process temperature is relatively high and the energy is relatively large, the process cannot directly act on the base material under the isolation action of the first transparent conductive layer, so that the base material is not easy to damage, and the battery performance is ensured. The manufacturing method of the heterojunction battery provided by the embodiment of the invention comprises the step of manufacturing the TCO thin film on the silicon wafer by adopting the manufacturing method of the TCO thin film.

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

A plasma source (100) includes a plasma deposition head (110) having an aperture (111) for delivering an atmospheric pressure plasma to a substrate (50). An electrode plate (120) is mounted in a slot cavity (112) of the deposition head. A gas supply system (130) is arranged for supplying a gas mass flow toward the substrate through a gap (G) between the electrode plate and the deposition head. A removable insert (140) is removably mounted in the gap, the removable insert being arranged for patterning an atmospheric pressure plasma flow towards the substrate by locally blocking a section of the slot cavity thereby forming a patterning channel between the gas supply system and the aperture.

Embodiments of the present invention disclose forming an epitaxial structure in a fin field-effect transistor. In one embodiment, a method of forming source / drain members in a FinFET device includes: providing a fin formed over a substrate and a gate structure formed over the fin; forming a groove adjacent to the gate structure in the fin; forming a first epitaxial layer in the groove; forming a second epitaxial layer over the first epitaxial layer; and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, and one or both of the first epitaxial layer and the third epitaxial layer contain a second element different from the first element. One or both of the first epitaxial layer and the third epitaxial layer may be formed by a plasma deposition process.

Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedance at a substrate support in a plasma processing chamber during substrate processing. The substrate support includes a plurality of substrate support pins, in which a radio frequency voltage, a current, and a phase of each of the plurality of substrate support pins are measured, and an impedance of the support pins is adjusted in real time. Each of the substrate support pins is coupled to an associated, remotely controllable, adjustable impedance circuit. In one embodiment, a variable capacitor is used to adjust the impedance of an impedance circuit coupled to an associated substrate support pin, and may be remotely adjusted with a stepping motor. In another embodiment, a microcontroller may control impedance adjustment of all of the plurality of substrate support pins, and may be used to track the impedances to each other and track the impedances with a body impedance of the plasma processing chamber.

The invention discloses a plasma deposition and laser remelting composite additive manufacturing method, and belongs to the technical field of additive manufacturing. The manufacturing method comprises the processes of plasma deposition, laser densification treatment, laser cutting and the like. Firstly, ceramic, metal or a mixed raw material of ceramic and metal is heated to a molten or semi-molten state through plasma deposition, the molten or semi-molten state is deposited on a substrate through plasma airflow, a forming layer is formed, and in the step, the uniformity and adhesive force of the forming layer are ensured through efficient heat energy transfer and material conveying capacity of the plasma deposition technology. And densifying the forming layer by adopting a selective laser melting mode, and cutting the contour of the forming piece by utilizing a laser cutting process. According to the method, the plasma deposition technology and the laser direct additive manufacturing technology are fused, the method has the advantages of multi-material implementation of the deposition technology and high-precision forming of the laser sintering technology, the material utilization rate and the component performance are improved, and the component manufacturing period is shortened.

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber, where the plasma unit contains a capacitively coupled plasma (CCP) unit and flowing the plasma through an ion suppressor to produce an activated fluid comprising reactive species and neutral species. The activated fluid has an ion concentration of about 70% to about 99% less than an ion concentration of the plasma. The method also includes flowing a mixture of the activated fluid and a silicon precursor to a substrate disposed in the process chamber and forming an amorphous silicon layer on the substrate.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The application provides a composite film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) performing first plasma deposition treatment by using a composite tin target material to obtain a first tin oxide layer; (2) performing second plasma deposition treatment on the surface of the first tin oxide layer by using the composite tin target material to form a second tin oxide layer, thereby obtaining the composite film; wherein the composite tin target material comprises stannous oxide and tin oxide; the oxygen partial pressure of the first plasma deposition treatment is less than the oxygen partial pressure of the second plasma deposition treatment. The application adopts plasma deposition to prepare an electron transport layer, introduces trace oxygen vacancies by controlling the oxygen content in the target material and the oxygen partial pressure in the deposition process, activates interface carriers, promotes electron extraction, and improves the photoelectric performance and stability of the composite electron transport layer.

A method of plasma etching or plasma deposition of a target layer of material in or onto a sample comprising a further layer of material, the method comprising: during a process of plasma etching or plasma deposition of the target layer of material: directing light of a first wavelength at the sample; measuring the intensity of light of the first wavelength reflected by the sample; directing light of a second wavelength at the sample; and measuring the intensity of light of the second wavelength reflected by the sample; determining, based on the intensities of light reflected by the sample, an endpoint of the process of plasma etching or plasma deposition of the target layer of material; and ending the process of plasma etching or plasma deposition of the target layer of material based on the determined endpoint.

A method for producing an electrochemical lithium-ion cell component, comprising: Advancing a substrate for a lithium-ion cell between opposing first and second calender rolls (6, 8, 106, 108, 206, 208, 306, 308, 406, 408, 506, 508); depositing particles of electrode material (16, 116, 302) comprising an active electrode material and a metal into a gap (18, 410, 510) between a first side of the substrate (20, 120, 228, 310, 413, 513) and the first calender roll (6, 106, 206, 306, 406, 506) by atmospheric plasma deposition, wherein the metal is surface-activated by the atmospheric plasma; and Pressing the deposited particles of the active electrode material and the metal particles between the first and second calender rolls (6, 8, 106, 108, 206, 208, 306, 308, 406, 408, 506, 508) to form an electrode layer (2) on the first side of the substrate.

A method and apparatus for densifying a silicon carbide film using remote plasma treatment is provided. The operations of remote plasma deposition and remote plasma treatment of the silicon carbide film are alternated to control the film density. A silicon carbide film of a first thickness is deposited, followed by remote plasma treatment, and then a silicon carbide film of a second thickness is deposited, followed by another remote plasma treatment. The remote plasma treatment can cause radicals of a source gas in a substantially low energy state (e.g., hydrogen radicals in a ground state) to flow toward the silicon carbide film deposited on a substrate. The radicals of the source gas in a substantially low energy state promote crosslinking and film densification in the silicon carbide film.

The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, which comprises the following steps: 1) particle grading; 2) preliminary coating; 3) thermal spray coating; 4) plasma deposition; and 5) hot isostatic pressing of the rough blank, and finally aluminum silicon carbide is obtained. The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, and aluminum silicon carbide material with high silicon carbide volume fraction, low porosity, high thermal conductivity and adjustable thermal expansion coefficient is obtained.

The invention relates to a preparation method of a surface-modified sodium ferric sulfate positive electrode material with good processability and hydrophobicity. The preparation method comprises the following steps: (1) providing a carbon-compounded sodium ferric sulfate precursor; and (2) depositing hydrophobic groups on the surface of the material by using a low-temperature plasma deposition technology to obtain the sodium ferric sulfate positive electrode material with the core-shell structure. A hydrophobic thin shell layer is constructed on the surface of a sodium ferric sulfate precursor material through a low-temperature plasma deposition technology, the air stability, the processing performance and the thermal stability of the material are greatly improved, meanwhile, the stability of a positive electrode structure is enhanced, pulverization of positive electrode material particles in the circulation process is prevented, meanwhile, an inner core is of a carbon composite conductive active network structure, and the performance of the positive electrode material is improved. The transmission of sodium ions is facilitated.

The invention discloses plasma deposition-based TOPCon half cell edge passivation equipment, which comprises a machine body, a first workbench, a second workbench, a pair of first brackets and a plasma pretreatment mechanism, and is characterized in that the machine body is internally provided with a passivation mechanism on the second workbench; a cleaning mechanism is arranged on the first working table, the first supports are rotationally connected to the first working table, a graphite boat is connected to the first supports in a sliding mode, a plurality of containing grooves used for fixing TOPCon half batteries are formed in the graphite boat, and the ultrasonic cleaning groove is located between the pair of first supports; and the plasma pretreatment mechanism is used for bombarding the cutting edge of the TOPCon half cell. Compared with the prior art, the TOPCon half-piece battery edge passivation equipment based on plasma deposition can remove an oxide layer and metal impurities on the edge of a TOPCon half-piece battery, enhance chemical anchoring on the cutting surface of the TOPCon half-piece battery, and guarantee direct bonding of the cutting edge of the TOPCon battery piece and a passivation film.

The invention discloses an ALD deposition method and an ALD deposition system for a passive film, and the ALD deposition method for the passive film comprises the following steps: S1, chip loading and transmission, S2, preheating, S3, TMA pulse, S4, O3 pulse, S5, loop iteration and film thickness control, and S6, chip taking. S7, raw material gas protection: when a gas pipeline and a gas supply port of the plasma deposition furnace are tightened, sealing is performed through a leakage-proof system, leaked gas is adsorbed into a waste gas recovery box to be stored, and raw material supply is stopped during leakage; and S8, purging maintenance is carried out. The anti-leakage system is arranged to seal the gas pipeline and the gas supply port of the plasma deposition furnace, and meanwhile, leaked gas is recycled, so that the harm of leakage is eliminated, and the safety is improved.

The application provides a preparation method of a vertical carbon nanotube array / diamond-like carbon film composite adhesive material, and the preparation method comprises the following steps: uniformly covering a transfer medium on a target flexible substrate and heating to form a semi-cured state; turning over a vertical carbon nanotube array on a silicon substrate and applying pressure to make the vertical carbon nanotube array adhere to the surface of the semi-cured transfer medium, and fully combining the transfer medium and the vertical carbon nanotube array by heating and solidification; peeling the vertical carbon nanotube array from the silicon substrate to obtain a vertical carbon nanotube array with a transferred top end; and depositing a diamond-like carbon film on the surface of the vertical carbon nanotube array by using a radio frequency plasma deposition technology, so as to obtain the vertical carbon nanotube array / diamond-like carbon film composite adhesive material. The vertical carbon nanotube array is improved in adhesive characteristics by using the excellent mechanical properties of the diamond-like carbon, the contact area of the top end of the vertical carbon nanotube array and the surface to be adhered can be increased, and the method has the advantages of simplicity and easy operation.

The application provides a method for detecting the quality of a hot plate of a plasma deposition device. The hot plate is arranged in a shell, the shell is grounded, and the hot plate has a metal line arranged inside. The metal line is part of a radio frequency line of the plasma deposition device. The method comprises: constructing a first measurement loop, the first measurement loop comprising a measurement line and a first measured line, wherein the first measured line comprises the metal line and the shell, the metal line and the shell form a first plate capacitor, the measurement line is used to output voltage signals of different frequencies and feedback impedance spectra at the different frequencies; measuring a first impedance spectrum of the first plate capacitor by using the measurement line; and determining whether the metal line of the hot plate is normal according to the first impedance spectrum.

The embodiment of the utility model provides a lead frame anti-oxidation operation system, and relates to the field of semiconductors. The anti-oxidation operation system for the lead frame comprises a transmission part, a heating source, a plasma power supply, a first air inlet pipe, a heating cover and a deposition cavity, the transmission part is used for transmitting the lead frame, the heating source is connected to the heating cover, the plasma power source and the first air inlet pipe are connected to the deposition cavity, the first air inlet pipe inputs carbon source gas into the deposition cavity, the heating cover is located on the lower side of the deposition cavity, and the heating cover and the deposition cavity are used for getting close to the transmission part under the action of external force. And covering the lead frame for plasma deposition. In the working process, the heating source provides heat energy for the heating cover, and the plasma power supply is used for providing energy to enable the carbon source gas input by the first gas inlet pipe to form plasma in the deposition cavity, so that a graphene coating is conveniently deposited and formed on the lead frame, and the oxidation resistance of the lead frame is further improved; and the negative influence on the use performance is avoided.

Examples are disclosed that relate to depositing carbon films using a pulsed plasma. One example provides a processing tool, comprising a processing chamber, a substrate holder, a showerhead, flow control hardware configured to connect one or more processing gas sources with the showerhead, a radiofrequency (RF) power supply configured to provide RF power to form a plasma between the substrate holder and the showerhead, and a controller configured to control the flow control hardware to introduce a flow of a carbon-containing precursor and an etchant into the processing chamber through the showerhead during a deposition process, and to control the RF power supply to pulse the plasma during the deposition process.

The invention relates to a plasma external deposition device and method.The device comprises a rack, a microwave generator and a waveguide, the microwave generator and the waveguide are arranged on the rack, one end of the waveguide is connected with the output end of the microwave generator, and the plasma external deposition device is characterized in that a microwave end is arranged at the other end of the waveguide, and a vertically-perpendicular quartz glass tube is arranged on the near end face of the microwave end; the lower end of the quartz glass tube is communicated with a fuel gas source, a raw material spray pipe facing an opening is correspondingly arranged at the opening in the upper end of the quartz glass tube, a preform rotating chuck device is arranged on the rack corresponding to the opening in the upper end of the quartz glass tube, and the preform rotating chuck device or the microwave generator is connected with a reciprocating mechanism. By adopting the microwave plasma heating system with higher frequency, the energy coupling efficiency is improved, and the miniaturization of equipment is also realized. The material is fed from the outside of the plasma torch, and the silicon-fluorine raw material directly acts on the preform for radio-frequency plasma deposition, so that the utilization rate of the raw material and the deposition rate are improved. The device is reasonable in arrangement and compact in structure, the refractive index of the deposition layer can be accurately controlled, and the uniformity of the deposition layer is improved.