77 results about "Plasma deposition" patented technology

The invention discloses a photoresist micro-lens array preparation method and system, and relates to the field of micro-nano optical device manufacturing. The preparation method of the photoresist micro-lens array comprises the following steps: carrying out chemical mechanical polishing treatment on a silicon wafer, spin-coating photoresist on a substrate to form a cylindrical array, and eliminating solvent gradient through pre-drying; forming a fluorocarbon nano film on the surface of the photoresist through plasma deposition so as to reduce the surface energy of the photoresist; realizing hot reflux of the photoresist based on gradient annealing, wherein the gradient annealing comprises a preheating section, a main reflux section and a stable section; on the basis of the preheating section, glass transition stress is avoided, fluorine-containing gas and inert gas are synchronously introduced into the main backflow section to act on a plasma sheath layer, so that the flowing direction of photoresist is regulated and controlled, and the edge coffee ring effect is inhibited; the stable section synchronously performs plasma assistance to lock the shape; and the precision and the consistency of the micro-lens array are improved through segmented temperature regulation and control and a plasma auxiliary technology.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

A plasma source (100) includes a plasma deposition head (110) having an aperture (111) for delivering an atmospheric pressure plasma to a substrate (50). An electrode plate (120) is mounted in a slot cavity (112) of the deposition head. A gas supply system (130) is arranged for supplying a gas mass flow toward the substrate through a gap (G) between the electrode plate and the deposition head. A removable insert (140) is removably mounted in the gap, the removable insert being arranged for patterning an atmospheric pressure plasma flow towards the substrate by locally blocking a section of the slot cavity thereby forming a patterning channel between the gas supply system and the aperture.

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber, where the plasma unit contains a capacitively coupled plasma (CCP) unit and flowing the plasma through an ion suppressor to produce an activated fluid comprising reactive species and neutral species. The activated fluid has an ion concentration of about 70% to about 99% less than an ion concentration of the plasma. The method also includes flowing a mixture of the activated fluid and a silicon precursor to a substrate disposed in the process chamber and forming an amorphous silicon layer on the substrate.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The application provides a composite film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) performing first plasma deposition treatment by using a composite tin target material to obtain a first tin oxide layer; (2) performing second plasma deposition treatment on the surface of the first tin oxide layer by using the composite tin target material to form a second tin oxide layer, thereby obtaining the composite film; wherein the composite tin target material comprises stannous oxide and tin oxide; the oxygen partial pressure of the first plasma deposition treatment is less than the oxygen partial pressure of the second plasma deposition treatment. The application adopts plasma deposition to prepare an electron transport layer, introduces trace oxygen vacancies by controlling the oxygen content in the target material and the oxygen partial pressure in the deposition process, activates interface carriers, promotes electron extraction, and improves the photoelectric performance and stability of the composite electron transport layer.

The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, which comprises the following steps: 1) particle grading; 2) preliminary coating; 3) thermal spray coating; 4) plasma deposition; and 5) hot isostatic pressing of the rough blank, and finally aluminum silicon carbide is obtained. The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, and aluminum silicon carbide material with high silicon carbide volume fraction, low porosity, high thermal conductivity and adjustable thermal expansion coefficient is obtained.

The invention discloses plasma deposition-based TOPCon half cell edge passivation equipment, which comprises a machine body, a first workbench, a second workbench, a pair of first brackets and a plasma pretreatment mechanism, and is characterized in that the machine body is internally provided with a passivation mechanism on the second workbench; a cleaning mechanism is arranged on the first working table, the first supports are rotationally connected to the first working table, a graphite boat is connected to the first supports in a sliding mode, a plurality of containing grooves used for fixing TOPCon half batteries are formed in the graphite boat, and the ultrasonic cleaning groove is located between the pair of first supports; and the plasma pretreatment mechanism is used for bombarding the cutting edge of the TOPCon half cell. Compared with the prior art, the TOPCon half-piece battery edge passivation equipment based on plasma deposition can remove an oxide layer and metal impurities on the edge of a TOPCon half-piece battery, enhance chemical anchoring on the cutting surface of the TOPCon half-piece battery, and guarantee direct bonding of the cutting edge of the TOPCon battery piece and a passivation film.

The invention discloses an ALD deposition method and an ALD deposition system for a passive film, and the ALD deposition method for the passive film comprises the following steps: S1, chip loading and transmission, S2, preheating, S3, TMA pulse, S4, O3 pulse, S5, loop iteration and film thickness control, and S6, chip taking. S7, raw material gas protection: when a gas pipeline and a gas supply port of the plasma deposition furnace are tightened, sealing is performed through a leakage-proof system, leaked gas is adsorbed into a waste gas recovery box to be stored, and raw material supply is stopped during leakage; and S8, purging maintenance is carried out. The anti-leakage system is arranged to seal the gas pipeline and the gas supply port of the plasma deposition furnace, and meanwhile, leaked gas is recycled, so that the harm of leakage is eliminated, and the safety is improved.

The application provides a preparation method of a vertical carbon nanotube array / diamond-like carbon film composite adhesive material, and the preparation method comprises the following steps: uniformly covering a transfer medium on a target flexible substrate and heating to form a semi-cured state; turning over a vertical carbon nanotube array on a silicon substrate and applying pressure to make the vertical carbon nanotube array adhere to the surface of the semi-cured transfer medium, and fully combining the transfer medium and the vertical carbon nanotube array by heating and solidification; peeling the vertical carbon nanotube array from the silicon substrate to obtain a vertical carbon nanotube array with a transferred top end; and depositing a diamond-like carbon film on the surface of the vertical carbon nanotube array by using a radio frequency plasma deposition technology, so as to obtain the vertical carbon nanotube array / diamond-like carbon film composite adhesive material. The vertical carbon nanotube array is improved in adhesive characteristics by using the excellent mechanical properties of the diamond-like carbon, the contact area of the top end of the vertical carbon nanotube array and the surface to be adhered can be increased, and the method has the advantages of simplicity and easy operation.

The application provides a method for detecting the quality of a hot plate of a plasma deposition device. The hot plate is arranged in a shell, the shell is grounded, and the hot plate has a metal line arranged inside. The metal line is part of a radio frequency line of the plasma deposition device. The method comprises: constructing a first measurement loop, the first measurement loop comprising a measurement line and a first measured line, wherein the first measured line comprises the metal line and the shell, the metal line and the shell form a first plate capacitor, the measurement line is used to output voltage signals of different frequencies and feedback impedance spectra at the different frequencies; measuring a first impedance spectrum of the first plate capacitor by using the measurement line; and determining whether the metal line of the hot plate is normal according to the first impedance spectrum.

The embodiment of the utility model provides a lead frame anti-oxidation operation system, and relates to the field of semiconductors. The anti-oxidation operation system for the lead frame comprises a transmission part, a heating source, a plasma power supply, a first air inlet pipe, a heating cover and a deposition cavity, the transmission part is used for transmitting the lead frame, the heating source is connected to the heating cover, the plasma power source and the first air inlet pipe are connected to the deposition cavity, the first air inlet pipe inputs carbon source gas into the deposition cavity, the heating cover is located on the lower side of the deposition cavity, and the heating cover and the deposition cavity are used for getting close to the transmission part under the action of external force. And covering the lead frame for plasma deposition. In the working process, the heating source provides heat energy for the heating cover, and the plasma power supply is used for providing energy to enable the carbon source gas input by the first gas inlet pipe to form plasma in the deposition cavity, so that a graphene coating is conveniently deposited and formed on the lead frame, and the oxidation resistance of the lead frame is further improved; and the negative influence on the use performance is avoided.

Examples are disclosed that relate to depositing carbon films using a pulsed plasma. One example provides a processing tool, comprising a processing chamber, a substrate holder, a showerhead, flow control hardware configured to connect one or more processing gas sources with the showerhead, a radiofrequency (RF) power supply configured to provide RF power to form a plasma between the substrate holder and the showerhead, and a controller configured to control the flow control hardware to introduce a flow of a carbon-containing precursor and an etchant into the processing chamber through the showerhead during a deposition process, and to control the RF power supply to pulse the plasma during the deposition process.

The present invention relates to an advantageous method for processing a low-hydrophilicity plastic film, wherein the method comprises the following sequential steps performed on its surface during film movement: (a) activation by exposure to atmospheric pressure cold plasma in a first gas atmosphere A1 containing plasma gas GP1; (b) intermediate processing by exposure to atmospheric pressure cold plasma in a second gas atmosphere A2 containing plasma gas GP2 and a processing gas GT containing alkane, olefin or alkyne hydrocarbon gases; and (c) deposition of a thin layer by exposure to atmospheric pressure cold plasma in a third gas atmosphere A3 containing plasma gas GP3, at least one volatile silicon precursor and an oxidizing gas.

This application provides a method for detecting the quality of a hot plate in a plasma deposition apparatus. The hot plate is disposed within a housing, which is grounded. The hot plate contains metal wiring, which is part of the radio frequency (RF) circuitry of the plasma deposition apparatus. The method includes: constructing a first measurement circuit, which includes a measurement circuit and a first circuit under test, wherein the first circuit under test includes the metal wiring and the housing, the metal wiring and the housing forming a first parallel-plate capacitor; the measurement circuit outputs voltage signals at different frequencies and feeds back impedance spectra at the different frequencies; measuring the first impedance spectrum of the first parallel-plate capacitor using the measurement circuit; and determining whether the metal wiring of the hot plate is normal based on the first impedance spectrum.

An amorphous carbon hard mask is formed having low hydrogen content and low sp3 carbon bonding but high modulus and hardness. The amorphous carbon hard mask is formed by depositing an amorphous carbon layer at a low temperature in a plasma deposition chamber and treating the amorphous carbon layer to a dual plasma-thermal treatment. The dual plasma-thermal treatment includes exposing the amorphous carbon layer to inert gas plasma for implanting an inert gas species in the amorphous carbon layer and exposing the amorphous carbon layer to a high temperature. The amorphous carbon hard mask has high etch selectivity relative to underlying materials.

The utility model discloses a bias voltage sample table adopting microwave plasma deposition, and belongs to the technical field of diamond preparation. Comprising a microwave plasma chemical vapor deposition equipment reaction chamber, a water-cooling deposition table, a bias electrode lifting table, a quartz cylinder and a tungsten annular bias electrode, and a bias sample table is arranged at the bottom of the microwave plasma chemical vapor deposition equipment reaction chamber; and a quartz microwave window is arranged at the top of the reaction chamber of the microwave plasma chemical vapor deposition equipment. According to the utility model, the bias electrode for directly applying bias voltage to the plasma and the water-cooling deposition table are integrated, and the high and low positions of the bias electrode and the water-cooling deposition table can be independently adjusted, so that the most suitable real-time relative positions of the electrode, the sample table and the plasma can be easily found, and the stable, uniform and efficient bias voltage enhanced nucleation process is realized; and uniform nucleation and growth of the diamond on the deposition substrate are facilitated.

A plasma deposition apparatus for applying a plasma deposition polymer coating to an article, the apparatus comprising: a plasma deposition chamber, comprising a monomer conveying system used for conveying monomers into the cavity, a plurality of electrodes arranged in the cavity and used for preparing plasmas through the monomers conveyed by the monomer conveying system, and a structure used for positioning objects between the electrodes. And a load lock chamber in communication with the plasma deposition chamber and for feeding an article into the plasma deposition chamber.

A lower plasma exclusion region ring for a substrate processing chamber includes an annular body including a radially inner surface, a radially outer surface, an upper surface, and a lower surface. Plasma exclusion region (PEZ) ring notches are disposed on an upper surface and a radially outer surface of the annular body.

Various embodiments of the present disclosure include methods and apparatus for depositing multiple layers on large-area substrates. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to a radio frequency power source and grounded, and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators are disposed within the showerhead, wherein one plasma applicator in the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Furthermore, a DC bias power supply is coupled to the substrate support assembly.

The present invention relates to a process of making a corrosion resistant, aluminium-deposited nickel-based superalloy super alloy for fission microstructures. The alloy comprises a nickel-based substrate (10) containing nickel, chromium, molybdenum, and titanium, with an aluminium layer (20) deposited on the substrate using vacuum plasma deposition. The substrate contains 80-88% nickel, 4-7% chromium, 6-9% molybdenum, and 1-3% titanium by weight. The aluminium layer have a thickness between 50-200µm, and acts as a barrier against fluoride salt attacks, reducing degradation rates and ensuring better structural integrity of the fission microstructure. The aluminium-deposited nickel-based superalloy can be used in various components of fission microstructures, including fuel cladding, heat exchangers, and reactor vessels, to improve the efficiency, longevity, and safety in nuclear environments.

The application discloses a preparation method of a vacuum discharge plasma deposition active proton exchange membrane separator and application thereof. The vacuum discharge plasma deposition active proton exchange membrane prepared by the application is applied to a carbon fixation electrochemical reactor, and belongs to the technical field of cross disciplines of material science and electrochemistry. The reactor utilizes the vacuum discharge plasma deposition method to prepare the active proton exchange membrane to separate the cathode and the anode, combines the optimized design of the three-dimensional net-shaped titanium-based iridium dioxide anode and the porous copper-based catalyst coating carbon cloth cathode, and adopts the serpentine and staggered flow field layout, so that the efficient and stable operation of the carbon fixation electrochemical reactor is realized. Meanwhile, through the precise assembly connection and safety guarantee design, the reliability and durability of the reactor are improved, and the application prospect is broad.

The invention discloses a composite treatment method for improving weather resistance and cold rolling stability of a steel coating, and belongs to the technical field of metal surface treatment. The method comprises the following steps: carrying out mechanical polishing and ultrasonic cleaning pretreatment on the surface of the steel; designing a Ti-Al-Cr-Si multi-element alloy target material, and preparing a multi-layer gradient composite coating by adopting a magnetron sputtering technology; carrying out magnetic filtration vacuum cathode arc plasma deposition treatment, namely adjusting the vacuum degree, applying a magnetic field and activating plasma; carrying out gas nitriding treatment, wherein the gas nitriding treatment comprises three stages of medium-temperature nitriding, high-temperature nitriding and low-temperature diffusion; and finally, detecting the performance of the coating, including hardness measurement, structure observation, binding force measurement, deformation rate evaluation and corrosion resistance test. Through the synergistic effect of the multi-layer gradient composite coating and gas nitriding, the hardness, wear resistance and corrosion resistance of the steel surface are remarkably improved, meanwhile, good cold rolling deformation stability is kept, and the method is suitable for the field of high-performance steel surface treatment.

The invention discloses a plasma deposition parameter regulation and control method based on virtual simulation, which relates to the field of drill bit welding processing, and comprises the following steps: step 1, receiving drill bit coating performance requirements and constraint indexes, setting initial process parameters, and generating an initial parameter setting scheme; step 2, constructing a three-dimensional deposition motion model based on an initial parameter setting scheme, and defining variable process parameter items in the model and a preset variation range of the variable process parameter items; 3, performing completion degree evaluation on the actual parameters of each variable item in the current period, and performing dynamic compensation adjustment on the initial parameter setting scheme; 4, based on the compensated parameters, dividing the current and the voltage into a plurality of grade intervals according to a preset rule; the optimal powder injection point is calculated in real time based on thermal field gradient distribution, the coating structure compactness and bonding strength are improved, an accurate technological parameter layered control means is formed, the stability and reliability of the deposition process are improved, and the test parameter adjustment cost is remarkably reduced.

Sleeves that can be disposed on either end of a bushing to improve the wear characteristics and usable lifetime of the bushing is disclosed. During the use of the bushing, such as when a machine including the bushing is operated, the sleeves may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing is protected, at least in part, from wear and tear. The sleeves may include a bulk material, such as steel, with a hard coating thereon, such as hard chromium, tungsten carbide, or the like. The hard coating may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves, after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing.

The invention discloses a low interface defect control method utilizing plasma deposition, which comprises the following steps: selecting coating powder which is Stellite6 or Stellite12; the surface of the base material is pretreated; and forming an alloy coating on the surface of the treated base material through plasma deposition. According to the plasma cladding method, the Stellite6 powder and the Stellite12 powder are cladded on the surface of the S30815 alloy according to optimized process parameters through the plasma cladding technology, and the interface defect control problem of plasma cladding of the Stellite6 alloy powder, the Stellite12 alloy powder and the S30815 base material can be solved.

A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

The present disclosure relates to methods of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate including providing a 4H—SiC or 6H—SiC substrate, implanting dopants into a surface region of the 4H—SiC or 6H—SiC substrate, annealing the implanted surface regions to form a 3C—SiC layer, and depositing a metal layer on the 3C—SiC layer. An implanting sequence of the implantation of dopants includes a plurality of plasma deposition acts with implantation energy levels including at least two different implantation energy levels. The implantation energy levels and one or more implantation doses of the plurality of plasma deposition acts are selected to form a 3C—SiC layer in the surface region of the 4H—SiC or 6H—SiC substrate during the annealing act. A method of manufacturing a semiconductor device having a structure including at least three layers including a 4H—SiC or 6H—SiC layer, a 3C—SiC layer, and a metal layer, by applying one or more of the techniques described herein, and semiconductor devices obtained with one or more of the techniques described herein are described.

The application provides a kind of plasma device and plasma deposition equipment.The device includes: plasma reaction cavity, including upper electrode plate and lower electrode plate, upper and lower electrode plate has voltage difference to generate plasma;And magnetic material includes: the first magnetic material is arranged on the first edge region of upper electrode plate in the length direction along the first side direction of upper electrode plate and is arranged under the first edge region of lower electrode plate in the length direction along the first side direction of lower electrode plate.The first magnetic material is thus arranged on the first edge region of upper electrode plate in the length direction along the first side direction of upper electrode plate and is arranged under the first edge region of lower electrode plate in the length direction along the first side direction of lower electrode plate, to build non-uniform magnetic field in plasma reaction cavity by magnetic material, to change the plasma density at the edge of plasma reaction cavity, so that the plasma peak that appears at the edge of plasma reaction cavity can be reduced when large-area CCP discharge, make the distribution of plasma in the whole plasma reaction cavity more uniform.

Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.