43 results about "Plasma deposition" patented technology

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

A plasma source (100) includes a plasma deposition head (110) having an aperture (111) for delivering an atmospheric pressure plasma to a substrate (50). An electrode plate (120) is mounted in a slot cavity (112) of the deposition head. A gas supply system (130) is arranged for supplying a gas mass flow toward the substrate through a gap (G) between the electrode plate and the deposition head. A removable insert (140) is removably mounted in the gap, the removable insert being arranged for patterning an atmospheric pressure plasma flow towards the substrate by locally blocking a section of the slot cavity thereby forming a patterning channel between the gas supply system and the aperture.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The application provides a composite film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) performing first plasma deposition treatment by using a composite tin target material to obtain a first tin oxide layer; (2) performing second plasma deposition treatment on the surface of the first tin oxide layer by using the composite tin target material to form a second tin oxide layer, thereby obtaining the composite film; wherein the composite tin target material comprises stannous oxide and tin oxide; the oxygen partial pressure of the first plasma deposition treatment is less than the oxygen partial pressure of the second plasma deposition treatment. The application adopts plasma deposition to prepare an electron transport layer, introduces trace oxygen vacancies by controlling the oxygen content in the target material and the oxygen partial pressure in the deposition process, activates interface carriers, promotes electron extraction, and improves the photoelectric performance and stability of the composite electron transport layer.

The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, which comprises the following steps: 1) particle grading; 2) preliminary coating; 3) thermal spray coating; 4) plasma deposition; and 5) hot isostatic pressing of the rough blank, and finally aluminum silicon carbide is obtained. The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, and aluminum silicon carbide material with high silicon carbide volume fraction, low porosity, high thermal conductivity and adjustable thermal expansion coefficient is obtained.

The invention discloses plasma deposition-based TOPCon half cell edge passivation equipment, which comprises a machine body, a first workbench, a second workbench, a pair of first brackets and a plasma pretreatment mechanism, and is characterized in that the machine body is internally provided with a passivation mechanism on the second workbench; a cleaning mechanism is arranged on the first working table, the first supports are rotationally connected to the first working table, a graphite boat is connected to the first supports in a sliding mode, a plurality of containing grooves used for fixing TOPCon half batteries are formed in the graphite boat, and the ultrasonic cleaning groove is located between the pair of first supports; and the plasma pretreatment mechanism is used for bombarding the cutting edge of the TOPCon half cell. Compared with the prior art, the TOPCon half-piece battery edge passivation equipment based on plasma deposition can remove an oxide layer and metal impurities on the edge of a TOPCon half-piece battery, enhance chemical anchoring on the cutting surface of the TOPCon half-piece battery, and guarantee direct bonding of the cutting edge of the TOPCon battery piece and a passivation film.

The invention discloses an ALD deposition method and an ALD deposition system for a passive film, and the ALD deposition method for the passive film comprises the following steps: S1, chip loading and transmission, S2, preheating, S3, TMA pulse, S4, O3 pulse, S5, loop iteration and film thickness control, and S6, chip taking. S7, raw material gas protection: when a gas pipeline and a gas supply port of the plasma deposition furnace are tightened, sealing is performed through a leakage-proof system, leaked gas is adsorbed into a waste gas recovery box to be stored, and raw material supply is stopped during leakage; and S8, purging maintenance is carried out. The anti-leakage system is arranged to seal the gas pipeline and the gas supply port of the plasma deposition furnace, and meanwhile, leaked gas is recycled, so that the harm of leakage is eliminated, and the safety is improved.

The application provides a preparation method of a vertical carbon nanotube array / diamond-like carbon film composite adhesive material, and the preparation method comprises the following steps: uniformly covering a transfer medium on a target flexible substrate and heating to form a semi-cured state; turning over a vertical carbon nanotube array on a silicon substrate and applying pressure to make the vertical carbon nanotube array adhere to the surface of the semi-cured transfer medium, and fully combining the transfer medium and the vertical carbon nanotube array by heating and solidification; peeling the vertical carbon nanotube array from the silicon substrate to obtain a vertical carbon nanotube array with a transferred top end; and depositing a diamond-like carbon film on the surface of the vertical carbon nanotube array by using a radio frequency plasma deposition technology, so as to obtain the vertical carbon nanotube array / diamond-like carbon film composite adhesive material. The vertical carbon nanotube array is improved in adhesive characteristics by using the excellent mechanical properties of the diamond-like carbon, the contact area of the top end of the vertical carbon nanotube array and the surface to be adhered can be increased, and the method has the advantages of simplicity and easy operation.

The application provides a method for detecting the quality of a hot plate of a plasma deposition device. The hot plate is arranged in a shell, the shell is grounded, and the hot plate has a metal line arranged inside. The metal line is part of a radio frequency line of the plasma deposition device. The method comprises: constructing a first measurement loop, the first measurement loop comprising a measurement line and a first measured line, wherein the first measured line comprises the metal line and the shell, the metal line and the shell form a first plate capacitor, the measurement line is used to output voltage signals of different frequencies and feedback impedance spectra at the different frequencies; measuring a first impedance spectrum of the first plate capacitor by using the measurement line; and determining whether the metal line of the hot plate is normal according to the first impedance spectrum.

The embodiment of the utility model provides a lead frame anti-oxidation operation system, and relates to the field of semiconductors. The anti-oxidation operation system for the lead frame comprises a transmission part, a heating source, a plasma power supply, a first air inlet pipe, a heating cover and a deposition cavity, the transmission part is used for transmitting the lead frame, the heating source is connected to the heating cover, the plasma power source and the first air inlet pipe are connected to the deposition cavity, the first air inlet pipe inputs carbon source gas into the deposition cavity, the heating cover is located on the lower side of the deposition cavity, and the heating cover and the deposition cavity are used for getting close to the transmission part under the action of external force. And covering the lead frame for plasma deposition. In the working process, the heating source provides heat energy for the heating cover, and the plasma power supply is used for providing energy to enable the carbon source gas input by the first gas inlet pipe to form plasma in the deposition cavity, so that a graphene coating is conveniently deposited and formed on the lead frame, and the oxidation resistance of the lead frame is further improved; and the negative influence on the use performance is avoided.

The present invention relates to an advantageous method for processing a low-hydrophilicity plastic film, wherein the method comprises the following sequential steps performed on its surface during film movement: (a) activation by exposure to atmospheric pressure cold plasma in a first gas atmosphere A1 containing plasma gas GP1; (b) intermediate processing by exposure to atmospheric pressure cold plasma in a second gas atmosphere A2 containing plasma gas GP2 and a processing gas GT containing alkane, olefin or alkyne hydrocarbon gases; and (c) deposition of a thin layer by exposure to atmospheric pressure cold plasma in a third gas atmosphere A3 containing plasma gas GP3, at least one volatile silicon precursor and an oxidizing gas.

This application provides a method for detecting the quality of a hot plate in a plasma deposition apparatus. The hot plate is disposed within a housing, which is grounded. The hot plate contains metal wiring, which is part of the radio frequency (RF) circuitry of the plasma deposition apparatus. The method includes: constructing a first measurement circuit, which includes a measurement circuit and a first circuit under test, wherein the first circuit under test includes the metal wiring and the housing, the metal wiring and the housing forming a first parallel-plate capacitor; the measurement circuit outputs voltage signals at different frequencies and feeds back impedance spectra at the different frequencies; measuring the first impedance spectrum of the first parallel-plate capacitor using the measurement circuit; and determining whether the metal wiring of the hot plate is normal based on the first impedance spectrum.

The utility model discloses a bias voltage sample table adopting microwave plasma deposition, and belongs to the technical field of diamond preparation. Comprising a microwave plasma chemical vapor deposition equipment reaction chamber, a water-cooling deposition table, a bias electrode lifting table, a quartz cylinder and a tungsten annular bias electrode, and a bias sample table is arranged at the bottom of the microwave plasma chemical vapor deposition equipment reaction chamber; and a quartz microwave window is arranged at the top of the reaction chamber of the microwave plasma chemical vapor deposition equipment. According to the utility model, the bias electrode for directly applying bias voltage to the plasma and the water-cooling deposition table are integrated, and the high and low positions of the bias electrode and the water-cooling deposition table can be independently adjusted, so that the most suitable real-time relative positions of the electrode, the sample table and the plasma can be easily found, and the stable, uniform and efficient bias voltage enhanced nucleation process is realized; and uniform nucleation and growth of the diamond on the deposition substrate are facilitated.

A plasma deposition apparatus for applying a plasma deposition polymer coating to an article, the apparatus comprising: a plasma deposition chamber, comprising a monomer conveying system used for conveying monomers into the cavity, a plurality of electrodes arranged in the cavity and used for preparing plasmas through the monomers conveyed by the monomer conveying system, and a structure used for positioning objects between the electrodes. And a load lock chamber in communication with the plasma deposition chamber and for feeding an article into the plasma deposition chamber.

The present invention relates to a process of making a corrosion resistant, aluminium-deposited nickel-based superalloy super alloy for fission microstructures. The alloy comprises a nickel-based substrate (10) containing nickel, chromium, molybdenum, and titanium, with an aluminium layer (20) deposited on the substrate using vacuum plasma deposition. The substrate contains 80-88% nickel, 4-7% chromium, 6-9% molybdenum, and 1-3% titanium by weight. The aluminium layer have a thickness between 50-200µm, and acts as a barrier against fluoride salt attacks, reducing degradation rates and ensuring better structural integrity of the fission microstructure. The aluminium-deposited nickel-based superalloy can be used in various components of fission microstructures, including fuel cladding, heat exchangers, and reactor vessels, to improve the efficiency, longevity, and safety in nuclear environments.

The application discloses a preparation method of a vacuum discharge plasma deposition active proton exchange membrane separator and application thereof. The vacuum discharge plasma deposition active proton exchange membrane prepared by the application is applied to a carbon fixation electrochemical reactor, and belongs to the technical field of cross disciplines of material science and electrochemistry. The reactor utilizes the vacuum discharge plasma deposition method to prepare the active proton exchange membrane to separate the cathode and the anode, combines the optimized design of the three-dimensional net-shaped titanium-based iridium dioxide anode and the porous copper-based catalyst coating carbon cloth cathode, and adopts the serpentine and staggered flow field layout, so that the efficient and stable operation of the carbon fixation electrochemical reactor is realized. Meanwhile, through the precise assembly connection and safety guarantee design, the reliability and durability of the reactor are improved, and the application prospect is broad.

Sleeves that can be disposed on either end of a bushing to improve the wear characteristics and usable lifetime of the bushing is disclosed. During the use of the bushing, such as when a machine including the bushing is operated, the sleeves may be in primary contact with abrasive elements (e.g., other parts of the machine, dirt, rock, etc.) and wear, while the underlying bushing is protected, at least in part, from wear and tear. The sleeves may include a bulk material, such as steel, with a hard coating thereon, such as hard chromium, tungsten carbide, or the like. The hard coating may be formed by any variety of processes, such as electroplating, plasma deposition, thermal deposition, or the like. In some cases, the sleeves, after being worn from use, may be replaced or refurbished to further extend the lifetime of the bushing.

The invention discloses a low interface defect control method utilizing plasma deposition, which comprises the following steps: selecting coating powder which is Stellite6 or Stellite12; the surface of the base material is pretreated; and forming an alloy coating on the surface of the treated base material through plasma deposition. According to the plasma cladding method, the Stellite6 powder and the Stellite12 powder are cladded on the surface of the S30815 alloy according to optimized process parameters through the plasma cladding technology, and the interface defect control problem of plasma cladding of the Stellite6 alloy powder, the Stellite12 alloy powder and the S30815 base material can be solved.

A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

Embodiments of the present disclosure provide a hydrophilic film, a method of manufacturing the same, and a product, the hydrophilic film being a plasma polymerized film formed by plasma deposition of an organic silicon monomer and a gas including an oxidizing gas on at least a part of a surface of a substrate under plasma excitation, or the hydrophilic film being a plasma polymerized hydrolyzed film formed by hydrolysis of the plasma polymerized film, the hydrophilic film having good hydrophilicity and light transmittance.

A method for selectively depositing a mask protection material using non-plasma treatments includes performing a non-plasma vapor treatment and performing a non-plasma halide treatment. During the non-plasma vapor treatment, a mask having openings exposing an underlying layer is treated with a non-plasma vapor to selectively deposit a first component of a mask protection material on the mask. During the non-plasma halide treatment, the mask and the underlying layer are treated with a non-plasma halide gas to selectively deposit a second component of the mask protection material on the mask. The non-plasma treatments are performed sequentially, but may be performed in either order. An optional pretreatment may be performed prior to the non-plasma treatments during which the mask is pretreated to form a reactive surface.

A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.

The application relates to a preparation method of a super-hydrophobic coating and a shape memory composite base cloth and an umbrella, and belongs to the technical field of coatings, and comprises the following steps: step S1, base cloth pretreatment; step S2, surface activation of the base cloth by using an atmospheric pressure plasma jet device; and step S3, evaporation at normal temperature and pressure: the base cloth is placed in a closed container and is fixed in suspension; fluorine-containing silane surface modifier FAS-17 is injected into the closed container; the closed container is isolated from the outside air at room temperature, saturated vapor pressure is achieved, a colorless, low-surface-energy super-hydrophobic coating is obtained on the surface of the base cloth, and a composite base cloth is formed. According to the scheme, a micro-nano rough groove structure is constructed through plasma deposition based on a physical-chemical synergistic mechanism, chemical hydrophobic modification is realized in combination with a fluorine-containing silane coating, the contact angle of the composite base cloth reaches 152 DEG + 2 DEG, the rolling angle is less than or equal to 2 DEG, and stable super-hydrophobicity is presented.

The utility model belongs to the technical field of plasma deposition, and discloses an auxiliary device utilizing a microwave deposition plasma source, which comprises a vacuum furnace body and an auxiliary plasma source, the inner cavity of the vacuum furnace body is cylindrical, a rotating stand for placing a workpiece is arranged in the vacuum furnace body, the auxiliary plasma source is connected with the vacuum furnace body, and the rotating stand is connected with the vacuum furnace body. The auxiliary plasma source comprises a waveguide tube, energy of the waveguide tube is injected from the left side, the right side of the waveguide tube is connected with the reflection matching network, quartz glass for isolating the normal-pressure waveguide and the vacuum cavity is arranged above the waveguide tube, and perturbators for adjusting the size of the microwave waveguide are arranged on the inner side of the waveguide tube and the position of a quartz glass window. By arranging the auxiliary plasma source and the perturbator, the scattering proportion and the scattering direction of waveguide energy to the vacuum cavity can be increased, and the uniformity of the whole coating can be ensured by matching with the rotating stand in the vacuum furnace body.

A method for depositing a metal film into a feature on a substrate is disclosed. Specifically, the method may include a low-temperature plasma deposition step, a thermal etching step, and a selective filling step. This method allows for the deposition of a metal film with low contact resistance at the interface, resulting in better electrical performance of the semiconductor device.

This invention discloses a method for controlling plasma deposition parameters based on virtual simulation, relating to the field of soldering process, including the following steps: Step 1: Receive the performance requirements and constraints of the soldering coating, and set initial process parameters to generate an initial parameter setting scheme; Step 2: Construct a three-dimensional deposition motion model based on the initial parameter setting scheme, and define the variable process parameters in the model and their preset variation ranges; Step 3: Evaluate the completion rate of the actual parameters of each variable item in the current cycle, and dynamically compensate and adjust the initial parameter setting scheme; Step 4: Based on the compensated parameters, divide the current and voltage into several level intervals according to preset rules; calculate the optimal powder injection point in real time based on the thermal gradient distribution, improve the coating density and bonding strength, form a precise layered control method for process parameters, improve the stability and reliability of the deposition process, and significantly reduce the cost of experimental parameter adjustment.

A method of forming source / drain features in a FinFET device includes providing a fin formed over a substrate and a gate structure formed over a fin, forming a recess in the fin adjacent to the gate structure, forming a first epitaxial layer in the recess, forming a second epitaxial layer over the first epitaxial layer, and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, while one or both of the first and the third epitaxial layer includes a second element different from the first element. One or both of the first and the third epitaxial layer may be formed by a plasma deposition process.

The application discloses a kind of microwave plasma additive manufacturing equipment, belongs to metal additive manufacturing technical field, including motion platform, microwave plasma deposition module, coaxial wire feeding mechanism and substrate are installed on motion platform, microwave plasma deposition module includes microwave generator, rectangular waveguide and plasma reaction cavity, microwave generator is connected with rectangular waveguide, plasma reaction cavity gas inlet is communicated with gas delivery system, coaxial wire feeding mechanism transports metal wire through rectangular waveguide, inert gas in plasma reaction cavity is ionized to form high-temperature plasma jet by microwave energy, and the end of metal wire is melted into metal droplet and deposited on the surface of substrate.The application has the advantages of improving energy utilization, reducing equipment cost and effectively controlling heat input, and the system complexity is lower.

This utility model relates to an antenna ring for a microwave plasma deposition apparatus, comprising a ring body located between a resonant waveguide cavity and a reaction chamber, and an annular mounting bracket and a pressure ring that mate with an aluminum ring. The ring body is a conductive and corrosion-resistant metal structure, with its circumferentially continuous mesh satisfying the following: mesh diameter 0.5–6 mm (preferably 1–5 mm), aperture ratio 40%–80%, wire diameter 0.05–1.0 mm (preferably 0.1–0.8 mm), and mesh shape circular or polygonal. The ring body is held between the annular mounting bracket and the aluminum ring by the pressure ring and electrically connected to the cavity; a solid metal reflective strip (a hole-free area, 3–20 mm wide) is provided on the outer edge of the ring to enhance microwave reflection and field shaping; the axial distance between the ring and the quartz isolation plate is 2–20 mm. This structure achieves multi-point microwave radiation, uniform reflection, and Faraday shielding, and is easy to disassemble, maintain, and reliably grounded, making it suitable for large-area thin-film deposition equipment with substrates ≥8 inches.

Methods of forming non-conformal silicon nitride structures including overlying features are disclosed. An exemplary method includes depositing silicon nitride onto the top, bottom, and sidewalls of the feature, and optionally treating the deposited silicon nitride, using a plasma deposition process. The deposition process and / or the treatment process may affect the deposited silicon nitride such that after the etching process, the silicon nitride is preferentially removed from the bottom of the feature such that the structure includes silicon nitride on the top and sidewalls of the feature and does not include silicon nitride or includes relatively little silicon nitride at the bottom of the feature.