108 results about "Plasma deposition" patented technology

The invention discloses a photoresist micro-lens array preparation method and system, and relates to the field of micro-nano optical device manufacturing. The preparation method of the photoresist micro-lens array comprises the following steps: carrying out chemical mechanical polishing treatment on a silicon wafer, spin-coating photoresist on a substrate to form a cylindrical array, and eliminating solvent gradient through pre-drying; forming a fluorocarbon nano film on the surface of the photoresist through plasma deposition so as to reduce the surface energy of the photoresist; realizing hot reflux of the photoresist based on gradient annealing, wherein the gradient annealing comprises a preheating section, a main reflux section and a stable section; on the basis of the preheating section, glass transition stress is avoided, fluorine-containing gas and inert gas are synchronously introduced into the main backflow section to act on a plasma sheath layer, so that the flowing direction of photoresist is regulated and controlled, and the edge coffee ring effect is inhibited; the stable section synchronously performs plasma assistance to lock the shape; and the precision and the consistency of the micro-lens array are improved through segmented temperature regulation and control and a plasma auxiliary technology.

The invention relates to a mixed cathode for ion plasma deposition systems and methods. A cathode (200) for use in an ion deposition process includes a body (202) defining a working surface (204) of the cathode; and at least one insert (218) coupled to the body. The body comprises a first deposited material, and the at least one insert comprises a second deposited material that is incompatible with the first deposited material. The at least one insert is at least partially exposed at the working cathode surface. The first deposition material and the second deposition material are capable of evaporating in response to an arc generated at the working cathode surface for depositing a coating comprising the first deposition material and the second deposition material on a substrate.

To provide a method for performing gap filling of a feature on a substrate, and a gas supply system for supplying a process gas to a process chamber for an ALD process and plasma processing.SOLUTION: A method for performing gap fill of a feature on a substrate includes the following operations: (a) moving the substrate into a process chamber; (b) performing a plurality of cycles of an ALD process; (c) purging process gases from the ALD process from the process chamber; (d) performing a plasma treatment on the substrate by introducing a fluorine- containing gas into the process chamber and applying RF power to the fluorine-containing gas to generate a fluorine plasma in the process chamber; (e) purging process gases from the plasma treatment from the process chamber; (f) repeating the operations (b) through (e) until a predefined number of cycles are performed.SELECTED DRAWING: Figure 4

Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

Methods and apparatuses for depositing silicon nitride using a plasma over low-k dielectric material while protecting the low-k dielectric material are provided. The methods comprise providing a substrate having a dielectric material deposited thereon, depositing a protective layer on the dielectric material in a plasma-free environment, and after depositing the protective layer, exposing the substrate to a first plasma to deposit a first silicon nitride while converting at least a portion of the protective layer to second silicon nitride.

The present invention relates to an assembly for chemical plasma deposition under low pressure conditions, more specifically plasma enhanced chemical vapor deposition, comprising a support component that integrates both a waveguide and a support component in one piece, where the waveguide is incorporated within the support component.

A method for controlling particle growth in a processing chamber is disclosed herein. The method includes performing at least one plasma deposition process in a chamber using a precursor to form a layer on a substrate. The method also includes providing power to the chamber during the at least one plasma deposition process, and monitoring at least one criterion to determine when at least one plasma purge is to be performed. The method further includes performing at least one plasma purge by applying a gas into the chamber in response to at least one criterion indicating that the at least one plasma purge is to be performed.

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber and flowing the plasma through an ion suppressor to produce an activated fluid containing reactive species and neutral species. The activated fluid either contains no ions or contains a lower concentration of ions than the plasma. The method further includes flowing the activated fluid into a first inlet of a dual channel showerhead within the process chamber and flowing a silicon precursor into a second inlet of the dual channel showerhead. Thereafter, the method includes flowing a mixture of the activated fluid and the silicon precursor out of the dual channel showerhead and forming an amorphous silicon layer on a substrate disposed in the process chamber.

A plasma source (100) includes a plasma deposition head (110) having an aperture (111) for delivering an atmospheric pressure plasma to a substrate (50). An electrode plate (120) is mounted in a slot cavity (112) of the deposition head. A gas supply system (130) is arranged for supplying a gas mass flow toward the substrate through a gap (G) between the electrode plate and the deposition head. A removable insert (140) is removably mounted in the gap, the removable insert being arranged for patterning an atmospheric pressure plasma flow towards the substrate by locally blocking a section of the slot cavity thereby forming a patterning channel between the gas supply system and the aperture.

Embodiments of the present invention disclose forming an epitaxial structure in a fin field-effect transistor. In one embodiment, a method of forming source / drain members in a FinFET device includes: providing a fin formed over a substrate and a gate structure formed over the fin; forming a groove adjacent to the gate structure in the fin; forming a first epitaxial layer in the groove; forming a second epitaxial layer over the first epitaxial layer; and forming a third epitaxial layer over the second epitaxial layer. The second epitaxial layer may be doped with a first element, and one or both of the first epitaxial layer and the third epitaxial layer contain a second element different from the first element. One or both of the first epitaxial layer and the third epitaxial layer may be formed by a plasma deposition process.

Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedance at a substrate support in a plasma processing chamber during substrate processing. The substrate support includes a plurality of substrate support pins, in which a radio frequency voltage, a current, and a phase of each of the plurality of substrate support pins are measured, and an impedance of the support pins is adjusted in real time. Each of the substrate support pins is coupled to an associated, remotely controllable, adjustable impedance circuit. In one embodiment, a variable capacitor is used to adjust the impedance of an impedance circuit coupled to an associated substrate support pin, and may be remotely adjusted with a stepping motor. In another embodiment, a microcontroller may control impedance adjustment of all of the plurality of substrate support pins, and may be used to track the impedances to each other and track the impedances with a body impedance of the plasma processing chamber.

Method for depositing amorphous silicon materials are provide and include generating a plasma within a plasma unit in fluid communication with a process chamber, where the plasma unit contains a capacitively coupled plasma (CCP) unit and flowing the plasma through an ion suppressor to produce an activated fluid comprising reactive species and neutral species. The activated fluid has an ion concentration of about 70% to about 99% less than an ion concentration of the plasma. The method also includes flowing a mixture of the activated fluid and a silicon precursor to a substrate disposed in the process chamber and forming an amorphous silicon layer on the substrate.

The invention discloses a preparation method of a low-temperature plasma plating and permeating modified layer on the surface of a metal mold. The preparation method comprises the following steps: S1, precise pretreatment of a base body: sequentially carrying out mechanical grinding and polishing and ultrasonic cleaning on the base body, and then drying and putting the base body in a vacuum chamber; s2, plasma activation: after vacuumizing, introducing mixed gas of argon and hydrogen, generating glow discharge under the action of a pulse power supply, and performing sputtering activation on the surface of the substrate; s3, gradient transition layer plasma deposition is conducted, specifically, a pulse direct-current plasma source is adopted, a Ti target and a Cr target serve as sputtering sources, and a transition layer with components changing in a gradient mode is prepared; s4, plating and permeating a multi-element synergistic functional layer: preparing the functional layer by adopting a radio frequency-pulse direct-current composite plasma source, namely a Ti target, a Cr target, a Si-Al alloy target and a rare earth element target through synergistic sputtering; and S5, post-treatment optimization: performing vacuum cooling to room temperature after low-temperature annealing treatment to obtain a final modified layer. The permeation modified layer prepared by the method has high binding force, high hardness, high wear resistance and salt spray corrosion resistance.

The application provides a composite film and a preparation method and application thereof, and the preparation method comprises the following steps: (1) performing first plasma deposition treatment by using a composite tin target material to obtain a first tin oxide layer; (2) performing second plasma deposition treatment on the surface of the first tin oxide layer by using the composite tin target material to form a second tin oxide layer, thereby obtaining the composite film; wherein the composite tin target material comprises stannous oxide and tin oxide; the oxygen partial pressure of the first plasma deposition treatment is less than the oxygen partial pressure of the second plasma deposition treatment. The application adopts plasma deposition to prepare an electron transport layer, introduces trace oxygen vacancies by controlling the oxygen content in the target material and the oxygen partial pressure in the deposition process, activates interface carriers, promotes electron extraction, and improves the photoelectric performance and stability of the composite electron transport layer.

A method for producing an electrochemical lithium-ion cell component, comprising: Advancing a substrate for a lithium-ion cell between opposing first and second calender rolls (6, 8, 106, 108, 206, 208, 306, 308, 406, 408, 506, 508); depositing particles of electrode material (16, 116, 302) comprising an active electrode material and a metal into a gap (18, 410, 510) between a first side of the substrate (20, 120, 228, 310, 413, 513) and the first calender roll (6, 106, 206, 306, 406, 506) by atmospheric plasma deposition, wherein the metal is surface-activated by the atmospheric plasma; and Pressing the deposited particles of the active electrode material and the metal particles between the first and second calender rolls (6, 8, 106, 108, 206, 208, 306, 308, 406, 408, 506, 508) to form an electrode layer (2) on the first side of the substrate.

A method and apparatus for densifying a silicon carbide film using remote plasma treatment is provided. The operations of remote plasma deposition and remote plasma treatment of the silicon carbide film are alternated to control the film density. A silicon carbide film of a first thickness is deposited, followed by remote plasma treatment, and then a silicon carbide film of a second thickness is deposited, followed by another remote plasma treatment. The remote plasma treatment can cause radicals of a source gas in a substantially low energy state (e.g., hydrogen radicals in a ground state) to flow toward the silicon carbide film deposited on a substrate. The radicals of the source gas in a substantially low energy state promote crosslinking and film densification in the silicon carbide film.

The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, which comprises the following steps: 1) particle grading; 2) preliminary coating; 3) thermal spray coating; 4) plasma deposition; and 5) hot isostatic pressing of the rough blank, and finally aluminum silicon carbide is obtained. The application discloses a preparation method of aluminum silicon carbide material based on plasma deposition, and aluminum silicon carbide material with high silicon carbide volume fraction, low porosity, high thermal conductivity and adjustable thermal expansion coefficient is obtained.

The invention discloses plasma deposition-based TOPCon half cell edge passivation equipment, which comprises a machine body, a first workbench, a second workbench, a pair of first brackets and a plasma pretreatment mechanism, and is characterized in that the machine body is internally provided with a passivation mechanism on the second workbench; a cleaning mechanism is arranged on the first working table, the first supports are rotationally connected to the first working table, a graphite boat is connected to the first supports in a sliding mode, a plurality of containing grooves used for fixing TOPCon half batteries are formed in the graphite boat, and the ultrasonic cleaning groove is located between the pair of first supports; and the plasma pretreatment mechanism is used for bombarding the cutting edge of the TOPCon half cell. Compared with the prior art, the TOPCon half-piece battery edge passivation equipment based on plasma deposition can remove an oxide layer and metal impurities on the edge of a TOPCon half-piece battery, enhance chemical anchoring on the cutting surface of the TOPCon half-piece battery, and guarantee direct bonding of the cutting edge of the TOPCon battery piece and a passivation film.

The invention discloses an ALD deposition method and an ALD deposition system for a passive film, and the ALD deposition method for the passive film comprises the following steps: S1, chip loading and transmission, S2, preheating, S3, TMA pulse, S4, O3 pulse, S5, loop iteration and film thickness control, and S6, chip taking. S7, raw material gas protection: when a gas pipeline and a gas supply port of the plasma deposition furnace are tightened, sealing is performed through a leakage-proof system, leaked gas is adsorbed into a waste gas recovery box to be stored, and raw material supply is stopped during leakage; and S8, purging maintenance is carried out. The anti-leakage system is arranged to seal the gas pipeline and the gas supply port of the plasma deposition furnace, and meanwhile, leaked gas is recycled, so that the harm of leakage is eliminated, and the safety is improved.

The application provides a preparation method of a vertical carbon nanotube array / diamond-like carbon film composite adhesive material, and the preparation method comprises the following steps: uniformly covering a transfer medium on a target flexible substrate and heating to form a semi-cured state; turning over a vertical carbon nanotube array on a silicon substrate and applying pressure to make the vertical carbon nanotube array adhere to the surface of the semi-cured transfer medium, and fully combining the transfer medium and the vertical carbon nanotube array by heating and solidification; peeling the vertical carbon nanotube array from the silicon substrate to obtain a vertical carbon nanotube array with a transferred top end; and depositing a diamond-like carbon film on the surface of the vertical carbon nanotube array by using a radio frequency plasma deposition technology, so as to obtain the vertical carbon nanotube array / diamond-like carbon film composite adhesive material. The vertical carbon nanotube array is improved in adhesive characteristics by using the excellent mechanical properties of the diamond-like carbon, the contact area of the top end of the vertical carbon nanotube array and the surface to be adhered can be increased, and the method has the advantages of simplicity and easy operation.

The application provides a method for detecting the quality of a hot plate of a plasma deposition device. The hot plate is arranged in a shell, the shell is grounded, and the hot plate has a metal line arranged inside. The metal line is part of a radio frequency line of the plasma deposition device. The method comprises: constructing a first measurement loop, the first measurement loop comprising a measurement line and a first measured line, wherein the first measured line comprises the metal line and the shell, the metal line and the shell form a first plate capacitor, the measurement line is used to output voltage signals of different frequencies and feedback impedance spectra at the different frequencies; measuring a first impedance spectrum of the first plate capacitor by using the measurement line; and determining whether the metal line of the hot plate is normal according to the first impedance spectrum.

The embodiment of the utility model provides a lead frame anti-oxidation operation system, and relates to the field of semiconductors. The anti-oxidation operation system for the lead frame comprises a transmission part, a heating source, a plasma power supply, a first air inlet pipe, a heating cover and a deposition cavity, the transmission part is used for transmitting the lead frame, the heating source is connected to the heating cover, the plasma power source and the first air inlet pipe are connected to the deposition cavity, the first air inlet pipe inputs carbon source gas into the deposition cavity, the heating cover is located on the lower side of the deposition cavity, and the heating cover and the deposition cavity are used for getting close to the transmission part under the action of external force. And covering the lead frame for plasma deposition. In the working process, the heating source provides heat energy for the heating cover, and the plasma power supply is used for providing energy to enable the carbon source gas input by the first gas inlet pipe to form plasma in the deposition cavity, so that a graphene coating is conveniently deposited and formed on the lead frame, and the oxidation resistance of the lead frame is further improved; and the negative influence on the use performance is avoided.

Examples are disclosed that relate to depositing carbon films using a pulsed plasma. One example provides a processing tool, comprising a processing chamber, a substrate holder, a showerhead, flow control hardware configured to connect one or more processing gas sources with the showerhead, a radiofrequency (RF) power supply configured to provide RF power to form a plasma between the substrate holder and the showerhead, and a controller configured to control the flow control hardware to introduce a flow of a carbon-containing precursor and an etchant into the processing chamber through the showerhead during a deposition process, and to control the RF power supply to pulse the plasma during the deposition process.

The invention relates to a plasma external deposition device and method.The device comprises a rack, a microwave generator and a waveguide, the microwave generator and the waveguide are arranged on the rack, one end of the waveguide is connected with the output end of the microwave generator, and the plasma external deposition device is characterized in that a microwave end is arranged at the other end of the waveguide, and a vertically-perpendicular quartz glass tube is arranged on the near end face of the microwave end; the lower end of the quartz glass tube is communicated with a fuel gas source, a raw material spray pipe facing an opening is correspondingly arranged at the opening in the upper end of the quartz glass tube, a preform rotating chuck device is arranged on the rack corresponding to the opening in the upper end of the quartz glass tube, and the preform rotating chuck device or the microwave generator is connected with a reciprocating mechanism. By adopting the microwave plasma heating system with higher frequency, the energy coupling efficiency is improved, and the miniaturization of equipment is also realized. The material is fed from the outside of the plasma torch, and the silicon-fluorine raw material directly acts on the preform for radio-frequency plasma deposition, so that the utilization rate of the raw material and the deposition rate are improved. The device is reasonable in arrangement and compact in structure, the refractive index of the deposition layer can be accurately controlled, and the uniformity of the deposition layer is improved.

The present invention relates to an advantageous method for processing a low-hydrophilicity plastic film, wherein the method comprises the following sequential steps performed on its surface during film movement: (a) activation by exposure to atmospheric pressure cold plasma in a first gas atmosphere A1 containing plasma gas GP1; (b) intermediate processing by exposure to atmospheric pressure cold plasma in a second gas atmosphere A2 containing plasma gas GP2 and a processing gas GT containing alkane, olefin or alkyne hydrocarbon gases; and (c) deposition of a thin layer by exposure to atmospheric pressure cold plasma in a third gas atmosphere A3 containing plasma gas GP3, at least one volatile silicon precursor and an oxidizing gas.

This application provides a method for detecting the quality of a hot plate in a plasma deposition apparatus. The hot plate is disposed within a housing, which is grounded. The hot plate contains metal wiring, which is part of the radio frequency (RF) circuitry of the plasma deposition apparatus. The method includes: constructing a first measurement circuit, which includes a measurement circuit and a first circuit under test, wherein the first circuit under test includes the metal wiring and the housing, the metal wiring and the housing forming a first parallel-plate capacitor; the measurement circuit outputs voltage signals at different frequencies and feeds back impedance spectra at the different frequencies; measuring the first impedance spectrum of the first parallel-plate capacitor using the measurement circuit; and determining whether the metal wiring of the hot plate is normal based on the first impedance spectrum.

An amorphous carbon hard mask is formed having low hydrogen content and low sp3 carbon bonding but high modulus and hardness. The amorphous carbon hard mask is formed by depositing an amorphous carbon layer at a low temperature in a plasma deposition chamber and treating the amorphous carbon layer to a dual plasma-thermal treatment. The dual plasma-thermal treatment includes exposing the amorphous carbon layer to inert gas plasma for implanting an inert gas species in the amorphous carbon layer and exposing the amorphous carbon layer to a high temperature. The amorphous carbon hard mask has high etch selectivity relative to underlying materials.

The invention discloses a method for depositing a porous carbon film through laser-induced plasma and application, and relates to the technical field of femtosecond laser micro-nano machining. A carrier, a polyimide film and a substrate are overlapped from bottom to top to form a sandwich structure; a gap is formed between the polyimide film and the substrate, and the width of the gap is 25 microns; the parameters of the femtosecond laser are debugged as follows: the wavelength is 1028 nm, the pulse width is 190 fs, the repetition frequency is 200 kHz, the power is 500-700 mW, and the objective multiple of the focused femtosecond laser is 5; designing a pattern of the carbon electrode in advance, fixing the sandwich structure on an objective table, performing femtosecond laser scanning according to the pattern of the carbon electrode, and depositing a porous carbon film on the lower surface of the substrate; the scanning speed is 5 mm / s, the scanning interval is 10 [mu] m, and the pattern of the porous carbon film corresponds to the shape of the carbon electrode. The porous carbon film has low surface roughness and abundant internal microporous structures, and also has the characteristics of good hydrophilicity and conductivity, excellent adhesion and the like.

The present invention provides a method for manufacturing a semiconductor device, comprising: providing a substrate on which a gate structure is formed, and source regions and drain regions are formed in the substrate on both sides of the gate structure; forming a first dielectric layer on the substrate, the first dielectric layer covering the substrate and the gate structure; forming a top metal layer on the first dielectric layer, and the top metal layer being electrically connected to the gate structure, the source regions, and the drain regions; conformally forming a second dielectric layer on the first dielectric layer and the top metal layer; etching a partial thickness of the second dielectric layer above the top metal layer, and performing a planarization process on the second dielectric layer to uniform the shape of the second dielectric layer through an etching process, thereby controlling the polishing rate of the second dielectric layer, and avoiding plasma damage and leakage problems caused by the top metal layer collecting free charges generated during the plasma deposition process.

A method for selectively depositing a mask protection material using non-plasma treatments includes performing a non-plasma vapor treatment and performing a non-plasma halide treatment. During the non-plasma vapor treatment, a mask having openings exposing an underlying layer is treated with a non-plasma vapor to selectively deposit a first component of a mask protection material on the mask. During the non-plasma halide treatment, the mask and the underlying layer are treated with a non-plasma halide gas to selectively deposit a second component of the mask protection material on the mask. The non-plasma treatments are performed sequentially, but may be performed in either order. An optional pretreatment may be performed prior to the non-plasma treatments during which the mask is pretreated to form a reactive surface.