This invention discloses a method for fabricating a
memristor based on a bile functional layer, belonging to the field of bioelectronic device fabrication and
in vitro diagnostics of
biliary tract diseases. The method sequentially completes FTO substrate pretreatment, bile functional layer preparation, Ag-on-
electrode deposition, and
memristor detection array fabrication. First, the FTO substrate is physically cleaned and
plasma-activated. Then, a 240-260 nm bile functional layer is prepared. Subsequently, an Ag-on-
electrode is deposited, and a 5-15 nm Ag atom embedding transition region is constructed. Finally, a 2×2 array is arranged and passivated for isolation. The process parameters of each step are synergistically matched to optimize the interface between the substrate, functional layer, and
electrode, fully preserving bile
pathological information. The resulting Ag / Bile / FTO structure
memristor exhibits high
electrical stability and shows significant differences in electrical response to bile samples from normal, gallstone, and
gallbladder cancer patients. It enables accurate and rapid
in vitro identification of
biliary tract diseases, and the process is simple, low-cost, and suitable for clinical application and large-scale production.