528 results about "Diffusion barrier" patented technology

The invention relates to a diffusion-resistant layer enhanced high-temperature oxidation-resistant composite ceramic coating for a niobium surface and a preparation process thereof. The coating system is composed of a diffusion layer, an anti-diffusion layer and a composite ceramic coating in sequence. In the preparation process, the Al2O3 diffusion-resistant layer is accurately constructed by adopting a slurry spin-coating method, and the method can realize accurate regulation and control of the thickness of the diffusion-resistant layer, so that uniform distribution of the Al2O3 layer is ensured. The introduction of the diffusion-resistant layer significantly improves the high-temperature stability and oxidation resistance of the coating, effectively delays the oxidation process of the material under an extreme high-temperature condition, and greatly prolongs the service life of the material.

A method for fabricating a thin film transistor comprises disposing a semiconductor layer including a channel area, and a first and second electrode areas, disposing a gate insulating layer covering the semiconductor layer, disposing a diffusion barrier layer covering the gate insulating layer, disposing first and second electrode holes corresponding to the first and second electrode areas, and disposing a gate electrode overlapping the channel area, first and second electrodes electrically connected to the first and second electrode areas through the first and second electrode holes. The disposing of the first electrode hole, and the second electrode hole includes patterning the diffusion layer with a patterning mask disposed on the diffusion barrier layer. The disposing of the gate electrode and the first and second electrodes may include disposing a conductive material layer covering the diffusion barrier layer, and patterning the conductive material layer.

A semiconductor IC structure includes a stacked transistor that has a top transistor stacked upon a bottom transistor. The bottom transistor includes at least a bottom source / drain region. The semiconductor IC structure further includes a replacement bottom source / drain region contact that includes a deep via region through at least the top semiconductor IC device and a monolithic region within the bottom semiconductor IC device directly coupled against a top surface of the bottom source / drain region. There is no interfacial impedance between the deep via region and the monolithic region. For example, there is no liner (e.g., such as a diffusion barrier, adhesion liner, or the like) between the deep via region and the monolithic region.

A hybrid bonding structure, a manufacturing method thereof, and a semiconductor device. The hybrid bonding structure includes a dielectric layer, including a first dielectric layer and a second dielectric layer which are bonded; a bonding interface layer between the first dielectric layer and the second dielectric layer; a metal structure in the dielectric layer; and a diffusion barrier layer in the dielectric layer, the diffusion barrier layer isolating the bonding interface layer. The hybrid bonding structure can improve device performance.

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method comprises forming a diffusion barrier comprising TiSiN having a modulus exceeding 290 GPa and a Si content exceeding 2.7 atomic % by exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor, followed by a silicon (Si) precursor, followed by the N precursor.

Various embodiments of the present disclosure are directed towards an integrated chip having an interconnect structure overlying a substrate. The interconnect structure includes a conductive wire disposed in a dielectric structure. The conductive wire comprises a body structure. A passivation structure overlies the interconnect structure. A bond pad overlies the passivation structure. The bond pad comprises an upper pad structure on the passivation structure and a plurality of lower bond structures extending through the passivation structure to the conductive wire. The lower bond structures respectively comprise a vertical bond structure and a diffusion barrier layer disposed along a lower surface and opposing sidewalls of the vertical bond structure. The upper pad structure comprises a first conductive layer vertically stacked with a second conductive layer

A ferroelectric field effect transistor includes a channel layer, a gate electrode facing the channel layer, a ferroelectric layer provided between the channel layer and the gate electrode, an oxygen-deficient layer provided between the channel layer and the ferroelectric layer, a diffusion barrier layer provided between the channel layer and the oxygen-deficient layer and configured to reduce or prevent oxygen exchange between the channel layer and the oxygen-deficient layer, and a source electrode and a drain electrode, electrically connected to the channel layer, wherein the channel layer and the oxygen-deficient layer include an oxide semiconductor material, and a concentration of oxygen vacancies in the oxygen-deficient layer may be greater than a concentration of oxygen vacancies in the channel layer.

The invention discloses a strong-combination wide-temperature-range wear-resistant composite coating, and relates to the technical field of solid lubricating materials, the composite coating comprises a transition layer, a functional inner layer, a diffusion barrier layer and a functional outer layer which are sequentially formed on the surface of a matrix, the transition layer is a Mo layer and a Mo2N layer, the functional inner layer is a MoAgN layer, the diffusion barrier layer is a Mo2N layer, the functional outer layer is a MoAgN layer, and the functional inner layer is a MoAgN layer. The functional outer layer is a MoAgN layer, and the MoAgN layer comprises a Mo2N phase and an Ag phase. The invention further discloses a preparation method of the composite coating and application of the composite coating in the field of solid lubrication protection. The composite coating is good in film-substrate binding force and low in friction coefficient and wear rate in a wide temperature range, damage to key mechanical parts in the air foil bearing caused by high-temperature lubrication failure can be avoided, and the tribological performance of the bearing parts under the working condition of the wide temperature range is improved.

The invention belongs to the technical field of stainless steel composite plates, and particularly relates to an iron-nickel stainless steel composite plate production process which comprises the following steps: performing plasma sputtering cleaning on a carbon steel base layer; the iron-nickel-stainless steel composite layer is subjected to laser micro-cladding treatment to form a micro-groove array, and a nano nickel-titanium alloy transition layer is preset in the micro-groove array; explosive cladding is carried out in a helium and argon mixed gas environment with the oxygen content smaller than or equal to 10 ppm, so that the carbon steel base layer and the iron-nickel-stainless steel cladding layer are subjected to interface metallurgical bonding to form a composite plate blank; the composite plate blank is hot-rolled and water-cooled to 500 DEG C or below after being heated and subjected to heat preservation; and the rolled composite plate blank is placed in mixed gas of nitrogen and hydrogen for isolation annealing, the bonding strength and the shearing strength are improved through an interface gradient diffusion layer composite structure constructed through the nanoscale, and interface oxidation and stress concentration in the rolling process are inhibited through asymmetrical rolling and a nanometer heat insulation coating; and multi-stage controlled cooling and diffusion barrier annealing are cooperatively regulated and controlled, so that the pitting corrosion resistance potential of the iron-nickel stainless steel clad layer is improved.

A pellicle including a pellicle membrane with improved stability to hydrogen plasma is provided. The pellicle membrane includes a plurality of carbon nanotubes (CNTs), where at least one carbon nanotube (CNT) of the plurality of CNTs is coated by a protection coating. The protection coating includes a plurality of nanostructures that includes a transition metal or an oxide, nitride, silicide or carbide thereof on a surface of the at least one CNT of the plurality of CNTs, a carbon-based diffusion barrier layer over at least the plurality of nanostructures, and a capping layer over at least the carbon-based diffusion barrier layer. The pellicle further includes a pellicle border attached to the pellicle membrane along a peripheral region of the pellicle membrane and a pellicle frame attached to the pellicle border.

The invention provides a preparation method of an F-doped carbon-coated MOF-derived lithium iron phosphate material. The preparation method comprises the following steps: uniformly mixing and dispersing a trivalent iron salt, a fluorine-containing ligand, a surfactant and a solvent, and carrying out solvothermal reaction to obtain fluorine-containing Fe-MOF; the preparation method comprises the following steps: uniformly mixing fluorine-containing Fe-MOF with a phosphorus source and a lithium source, grinding, and carrying out solid-phase sintering to obtain the F-doped carbon-coated MOF-derived lithium iron phosphate material (LFP (at) FC). The F-doped functional porous carbon has relatively high adsorption capacity, meanwhile, the Li < + > diffusion barrier is reduced, additional active sites are further endowed, the electronic conductivity of the material is improved, and a diffusion channel is accelerated. The LFP (at) FC positive electrode shows excellent rate capability and long cycle stability.

The invention discloses a trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer and a back electrode layer which are arranged in sequence, the hole transport layer is made of nickel oxide; the passivation layer is made of cerium oxide, and the thickness of the passivation layer is 2-5nm; the light incidence direction of the solar cell is from one side of the conductive substrate to one side of the back electrode layer. Ce < 3 + > in cerium oxide is preferentially combined with dangling bonds on the surface of NiOx to form Ce-O-Ni bonds, so that interface defects are eliminated; the cerium oxide energy level is located between the perovskite and the hole transport layer, so that an energy level buffering effect is achieved, and the photoelectric conversion efficiency is improved; the Ce < 3 + > / Ce < 4 + > valence state conversion characteristic of cerium oxide can efficiently absorb and convert ultraviolet photons and prevent the ultraviolet photons from damaging a perovskite lattice structure; the fluorite structure of CeO gamma forms an ion diffusion barrier to block Ni < 2 + > from migrating to a perovskite layer and protect the perovskite structure.

The invention relates to a method for forming a semiconductor structure. According to the forming method, after a diffusion barrier layer and a metal adhesion layer are formed in a through hole, reverse sputtering is firstly carried out to transfer part of the metal adhesion layer formed on the bottom wall of the through hole to the side wall of the through hole, the thickness of the metal adhesion layer located on the side wall of the through hole can be increased, flash deposition is then carried out, the thickness of the metal adhesion layer on the inner wall of the through hole is more uniform, and the thickness of the metal adhesion layer is improved. Therefore, the total thickness of the diffusion barrier layer and the metal adhesion layer located on the side wall of the through hole can be increased and is more uniform, the adhesiveness of the metal adhesion layer and the side wall of the through hole is enhanced, when the seed crystal layer grows on the basis of the metal adhesion layer, the crystallization direction of the seed crystal layer on the side wall of the through hole is relatively consistent, and the yield is improved. And then, when a metal material such as copper is grown on the basis of the seed crystal layer, the crystal phase arrangement of the metal material is more uniform, and the filling is more compact, so that the via hole has better supporting performance and reliability, and the test yield is favorably improved.

The invention provides a vertical cavity surface emitting laser and an epitaxial growth method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser comprises a substrate, an N-DBR, an active region growth layer, an oxidation limiting layer, a tunnel junction, a P-DBR and a surface ohmic contact layer which are stacked in sequence. The tunnel junction comprises a p + + layer, a first diffusion barrier layer, an n + + layer and a second diffusion barrier layer which are stacked in sequence. The p + + layer and the n + + layer are obtained through pulse doping growth, and P-DBR growth is carried out after stepped heating is carried out on the tunnel junction. The invention provides a comprehensive process based on pulse doping, an in-situ protection layer and stepped heating control, pulse doping is adopted when the n + + / p + + layer of the tunnel junction grows, the first diffusion barrier layer, the second diffusion barrier layer and the stepped heating process in subsequent growth are combined, and doping diffusion is remarkably inhibited while high conductivity of the tunnel junction is maintained.

The invention discloses a metalized diamond particle, a diamond / gallium-based liquid metal composite material and a preparation method thereof, and belongs to the field of composite thermal interface materials. The metallized diamond particle comprises a diamond particle, the surface of the diamond particle is coated with an immiscible alloy layer, the immiscible alloy layer contains a diffusion barrier component and a reaction wetting component, and the content of the diffusion barrier component in the immiscible alloy layer is not higher than 15 at% of the total content of the diffusion barrier component and the reaction wetting component; wherein the diffusion barrier component is one or more of tungsten, molybdenum and tantalum, and the reaction wetting component is one or more of silver and copper. The metallized diamond particles and the gallium-based liquid metal are combined to form the composite material, so that the diamond / gallium-based liquid metal composite material has more excellent thermal conductivity.

The utility model relates to a reflecting film and a backlight source module. The reflecting film comprises a transparent base material layer, a silver layer, a diffusion barrier layer and an aluminum layer which are sequentially stacked. The diffusion barrier layer comprises at least one of an aluminum oxide layer, a silicon dioxide layer, a titanium dioxide layer, an aluminum nitride layer, a silicon nitride layer, an ITO layer, an AZO layer, a GZO layer, an IZO layer, a ZTO layer and a graphene layer. According to the reflecting film, the silver layer is arranged on the transparent base material layer and has high reflectivity, and the aluminum layer is arranged on the back surface of the silver layer to serve as the brightness compensation layer, so that the silver layer can be thinned under the condition that the high reflectivity is kept, and the cost is reduced. Moreover, the diffusion barrier layer is arranged between the silver layer and the aluminum layer, so that aluminum atoms can be prevented from diffusing to the silver layer, and the reduction of the reflection efficiency is avoided.

Multiple threshold voltage (Multi-Vt) integration schemes for semiconductor devices are described. The methods include the use of diffusion barrier layers configured to provide multi-Vt through controlled dopant diffusion.

A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a diffusion barrier comprising TiSiN comprises exposing a semiconductor substrate to one or more first deposition phases alternating with one or more second deposition phases. Exposing the semiconductor substrate to the one or more first deposition phases comprises alternatingly exposing the semiconductor substrate to a titanium (Ti) precursor and a nitrogen (N) precursor. Exposing the semiconductor substrate to the one or more second deposition phases comprises sequentially exposing the semiconductor substrate to the Ti precursor and a silicon (Si) precursor without an intervening exposure to the N precursor therebetween, followed by exposing the semiconductor substrate to the N precursor.

Embodiments of the present application relate to the field of semiconductor, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises: a substrate comprising spaced-apart bit lines and semiconductor channels, the bit lines extending along a first direction, the semiconductor channels being located on part of top surfaces of the bit lines, and in a direction perpendicular to the top surfaces of the bit lines, the semiconductor channels comprising a first region, a second region and a third region arranged in sequence; a dielectric layer located between adjacent bit lines and on sidewalls of the semiconductor channels; a gate electrode surrounding the dielectric layer of the second region and extending along a second direction, the first direction being different from the second direction; a metal-semiconductor compound layer located on top surfaces of the semiconductor channels; a diffusion barrier layer at least surrounding sidewalls of the metal-semiconductor compound layer; and an insulating layer located between adjacent semiconductor channels on the same bit line and separating the gate electrode and the diffusion barrier layer located on adjacent dielectric layers. The embodiments of the present application can at least improve the electrical performance of the semiconductor structure.

The invention belongs to the field of new material preparation and electrochemical energy storage, and particularly relates to a micron silicon composite material for an all-solid-state battery and a preparation method and application of the micron silicon composite material. The electronic conductor and the micron silicon are calcined to form a conductive framework, then the conductive framework is compounded with the ionic conductor, the electronic / ionic conductivity is synergistically improved, specifically, the electronic conductivity is improved by doping the electronic conductor, and an effective buffer layer is provided for volume expansion of the micron silicon material; the doped ion conductor effectively reduces the diffusion barrier of lithium ions, promotes the rapid transmission of the lithium ions, improves the interface contact between the silicon negative electrode and the electrolyte, reduces the interface resistance, enables the lithium ions to be uniformly embedded, and obtains a stable SEI layer. The fast ion-electron conductor doping method balances the electron conductivity and ion transmission, when the obtained composite material is used as a negative electrode, the discharge capacity of an all-solid-state battery under 10C multiplying power reaches 97.9 mAh / g, the 200-time cycle capacity retention rate is 82.5%, the composite material is obviously superior to a traditional silicon-based negative electrode, and the composite material has a wide application prospect.

The invention belongs to the technical field of surface engineering, and relates to a preparation method of a protective coating for a metal connector of a solid oxide battery. A compact transition metal oxide inner layer is deposited on a metal substrate in a reactive sputtering mode, then a transition metal alloy outer layer is deposited in a metal sputtering mode, a transition metal oxide / transition metal alloy composite coating is formed, and a spinel protective layer is formed after annealing treatment. According to the method, a transition metal oxide inner layer is used as a diffusion barrier layer, diffusion of elements such as Cr from a substrate to a coating and diffusion of oxygen to the substrate in the high-temperature annealing and long-term service process are effectively inhibited, and therefore the thickness of a reaction layer and the thickness of a thermal growth oxide layer are remarkably reduced. The composite coating is compact in structure, stable in component, good in matching with the thermal expansion coefficient of the substrate, excellent in oxidation resistance and low in surface specific resistance, and capable of effectively improving the long-term operation stability and prolonging the service life of the SOC connector.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

The invention belongs to the technical field of hydrogen-resistant coatings, and particularly relates to a hydrogen-resistant coating as well as a preparation method and application thereof. The hydrogen-resistant coating comprises an alpha-Al-based solid solution layer on the substrate, Al2O3 micro-nano particles and SiO2 micro-nano particles which are dispersed and distributed in the alpha-Al-based solid solution layer, and an Al2O3 thin film layer covering the surface of the alpha-Al-based solid solution layer. The compact structure of the alpha-Al-based solid solution can block the permeation of hydrogen atoms, enhance the interface between phase particles and a matrix, prolong the diffusion path of the hydrogen atoms in the material, increase the diffusion barrier and serve as a trap for capturing hydrogen, and the composite coating has the dual effects of capturing and blocking hydrogen, so that the hydrogen permeability is further reduced. When the coating is slightly damaged, the damaged surface can be oxidized again to form Al2O3, and the self-repairing capacity is achieved. The composite coating is prepared by adopting a braze coating method, and has the advantages of simple preparation method, low cost, capability of realizing industrial batch production and the like.

The invention discloses a metal gate device structure manufacturing method and a metal gate device structure. The metal gate device structure manufacturing method comprises the steps of forming a fin part on a substrate; sequentially forming a gate dielectric layer and a cap layer on the surface of the fin part; forming a sacrificial and buffer layer on the surface of the cap layer, then performing heat treatment to enable atoms in the sacrificial and buffer layer material to diffuse into the cap layer material so as to improve the diffusion barrier capability of the cap layer, and then removing the sacrificial and buffer layer; sequentially forming a work function layer and a gate electrode layer on the surface of the cap layer after the sacrificial and buffer layers are removed, wherein the work function layer comprises a plurality of work function material layers which are sequentially stacked from inside to outside; wherein the surfaces of one or more inner-layer work function material layers formed before the outermost work function material layer are subjected to oxidation treatment respectively, so that the rough surfaces of the inner-layer work function material layers are leveled, interface diffusion is inhibited, and the stability of threshold voltage is improved.

An electro-optic device is described. The electro-optic device includes a thin film electro-optic layer including lithium and a lithium barrier structure. The thin film electro-optic layer has a plurality of surfaces. The lithium barrier structure covers at least a portion of the plurality of surfaces.

The utility model discloses a high-stiffness quantum dot diffusion film, and belongs to the technical field of display devices. The high-stiffness quantum dot diffusion film comprises a quantum dot adhesive layer and composite functional layers symmetrically arranged on the two sides of the quantum dot adhesive layer in an attached mode. The composite functional layer comprises an extrusion type PET diffusion film layer and a barrier layer deposited on the extrusion type PET diffusion film layer; and one surface of the barrier layer of the composite functional layer is attached and fixed to the quantum dot adhesive layer. Compared with a base material of a coating diffusion barrier film and a barrier film applied at present, the extrusion type diffusion barrier film has the advantages that the comprehensive cost is greatly reduced; the high-stiffness quantum dot diffusion film is provided with an efficient water sample blocking layer, so that quantum dots are prevented from losing efficacy, the service life is longer, and no failure risk exists; when the high-stiffness quantum dot diffusion film is applied to liquid crystal backlight, a common diffusion plate is not needed, the high-stiffness quantum dot diffusion film can be attached to a brightness enhancement film, a common diffusion film and other optical films for use, the liquid crystal backlight assembly process is simplified, and the cost is reduced.

The invention relates to the technical field of light emitting diode manufacturing, in particular to an LED chip and a preparation method thereof. The preparation method of the LED chip comprises the following steps: providing an epitaxial wafer; forming an insulating layer, wherein a hole is formed in the first insulating layer; forming a photoresist layer, and etching to form a second insulating layer opening; an Ag metal layer and a diffusion barrier layer are formed, the diffusion barrier layer is corroded and thinned, the side wall of the second insulating layer opening is etched, and a third insulating layer opening is formed; forming a protective layer; a passivation layer is formed, and holes are formed in the passivation layer; and forming a bonding pad layer. Wherein the width of the protective layer-the width of the diffusion barrier layer is greater than or equal to 2 microns; the distance between the side wall of the bonding pad layer and the side wall of the diffusion barrier layer is larger than or equal to 10 microns, diffusion of Ag in the Ag metal layer can be blocked, the Ag metal layer is prevented from being combined with the bonding pad layer to form alloy, and the reliability of the LED chip is greatly improved.

A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.

The invention relates to the technical field of lithium battery negative electrode materials, and particularly discloses a composite graphite negative electrode material and a preparation method and application thereof.The composite graphite negative electrode material comprises an inner core and a coating layer coating the outer side of the inner core, the inner core is graphite, and the coating layer is graphite. And the coating layer is a carbon layer doped with metal M atoms and oxide nano-clusters / particles of the metal M atoms. The coating layer doped with the metal M atoms and the oxide nano-clusters / particles of the metal M atoms can effectively reduce the diffusion barrier of Li < + >, and the lithium intercalation potential (greater than 0.3) of MOx is higher than that (0.02-0.2 V) of graphite, so that the probability of precipitation of Li < + > on the surface of the graphite due to polarization is reduced, and the risk of lithium precipitation is reduced.