385 results about "Diffusion barrier" patented technology

A hybrid bonding structure, a manufacturing method thereof, and a semiconductor device. The hybrid bonding structure includes a dielectric layer, including a first dielectric layer and a second dielectric layer which are bonded; a bonding interface layer between the first dielectric layer and the second dielectric layer; a metal structure in the dielectric layer; and a diffusion barrier layer in the dielectric layer, the diffusion barrier layer isolating the bonding interface layer. The hybrid bonding structure can improve device performance.

A ferroelectric field effect transistor includes a channel layer, a gate electrode facing the channel layer, a ferroelectric layer provided between the channel layer and the gate electrode, an oxygen-deficient layer provided between the channel layer and the ferroelectric layer, a diffusion barrier layer provided between the channel layer and the oxygen-deficient layer and configured to reduce or prevent oxygen exchange between the channel layer and the oxygen-deficient layer, and a source electrode and a drain electrode, electrically connected to the channel layer, wherein the channel layer and the oxygen-deficient layer include an oxide semiconductor material, and a concentration of oxygen vacancies in the oxygen-deficient layer may be greater than a concentration of oxygen vacancies in the channel layer.

The invention discloses a trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer and a back electrode layer which are arranged in sequence, the hole transport layer is made of nickel oxide; the passivation layer is made of cerium oxide, and the thickness of the passivation layer is 2-5nm; the light incidence direction of the solar cell is from one side of the conductive substrate to one side of the back electrode layer. Ce < 3 + > in cerium oxide is preferentially combined with dangling bonds on the surface of NiOx to form Ce-O-Ni bonds, so that interface defects are eliminated; the cerium oxide energy level is located between the perovskite and the hole transport layer, so that an energy level buffering effect is achieved, and the photoelectric conversion efficiency is improved; the Ce < 3 + > / Ce < 4 + > valence state conversion characteristic of cerium oxide can efficiently absorb and convert ultraviolet photons and prevent the ultraviolet photons from damaging a perovskite lattice structure; the fluorite structure of CeO gamma forms an ion diffusion barrier to block Ni < 2 + > from migrating to a perovskite layer and protect the perovskite structure.

The invention provides a vertical cavity surface emitting laser and an epitaxial growth method thereof, and belongs to the technical field of semiconductors. The vertical cavity surface emitting laser comprises a substrate, an N-DBR, an active region growth layer, an oxidation limiting layer, a tunnel junction, a P-DBR and a surface ohmic contact layer which are stacked in sequence. The tunnel junction comprises a p + + layer, a first diffusion barrier layer, an n + + layer and a second diffusion barrier layer which are stacked in sequence. The p + + layer and the n + + layer are obtained through pulse doping growth, and P-DBR growth is carried out after stepped heating is carried out on the tunnel junction. The invention provides a comprehensive process based on pulse doping, an in-situ protection layer and stepped heating control, pulse doping is adopted when the n + + / p + + layer of the tunnel junction grows, the first diffusion barrier layer, the second diffusion barrier layer and the stepped heating process in subsequent growth are combined, and doping diffusion is remarkably inhibited while high conductivity of the tunnel junction is maintained.

The invention discloses a metalized diamond particle, a diamond / gallium-based liquid metal composite material and a preparation method thereof, and belongs to the field of composite thermal interface materials. The metallized diamond particle comprises a diamond particle, the surface of the diamond particle is coated with an immiscible alloy layer, the immiscible alloy layer contains a diffusion barrier component and a reaction wetting component, and the content of the diffusion barrier component in the immiscible alloy layer is not higher than 15 at% of the total content of the diffusion barrier component and the reaction wetting component; wherein the diffusion barrier component is one or more of tungsten, molybdenum and tantalum, and the reaction wetting component is one or more of silver and copper. The metallized diamond particles and the gallium-based liquid metal are combined to form the composite material, so that the diamond / gallium-based liquid metal composite material has more excellent thermal conductivity.

Multiple threshold voltage (Multi-Vt) integration schemes for semiconductor devices are described. The methods include the use of diffusion barrier layers configured to provide multi-Vt through controlled dopant diffusion.

A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.

The invention belongs to the technical field of surface engineering, and relates to a preparation method of a protective coating for a metal connector of a solid oxide battery. A compact transition metal oxide inner layer is deposited on a metal substrate in a reactive sputtering mode, then a transition metal alloy outer layer is deposited in a metal sputtering mode, a transition metal oxide / transition metal alloy composite coating is formed, and a spinel protective layer is formed after annealing treatment. According to the method, a transition metal oxide inner layer is used as a diffusion barrier layer, diffusion of elements such as Cr from a substrate to a coating and diffusion of oxygen to the substrate in the high-temperature annealing and long-term service process are effectively inhibited, and therefore the thickness of a reaction layer and the thickness of a thermal growth oxide layer are remarkably reduced. The composite coating is compact in structure, stable in component, good in matching with the thermal expansion coefficient of the substrate, excellent in oxidation resistance and low in surface specific resistance, and capable of effectively improving the long-term operation stability and prolonging the service life of the SOC connector.

A composition of matter includes a diamond substrate and a second substrate material. An interfacial region formed between the diamond substrate material and the second material substrate wherein the interfacial region incorporates transition metal atoms and diffusion barrier metal atoms are integrated with at least a crystal structure of the diamond substrate.

The invention discloses a metal gate device structure manufacturing method and a metal gate device structure. The metal gate device structure manufacturing method comprises the steps of forming a fin part on a substrate; sequentially forming a gate dielectric layer and a cap layer on the surface of the fin part; forming a sacrificial and buffer layer on the surface of the cap layer, then performing heat treatment to enable atoms in the sacrificial and buffer layer material to diffuse into the cap layer material so as to improve the diffusion barrier capability of the cap layer, and then removing the sacrificial and buffer layer; sequentially forming a work function layer and a gate electrode layer on the surface of the cap layer after the sacrificial and buffer layers are removed, wherein the work function layer comprises a plurality of work function material layers which are sequentially stacked from inside to outside; wherein the surfaces of one or more inner-layer work function material layers formed before the outermost work function material layer are subjected to oxidation treatment respectively, so that the rough surfaces of the inner-layer work function material layers are leveled, interface diffusion is inhibited, and the stability of threshold voltage is improved.

An electro-optic device is described. The electro-optic device includes a thin film electro-optic layer including lithium and a lithium barrier structure. The thin film electro-optic layer has a plurality of surfaces. The lithium barrier structure covers at least a portion of the plurality of surfaces.

The invention relates to the technical field of lithium battery negative electrode materials, and particularly discloses a composite graphite negative electrode material and a preparation method and application thereof.The composite graphite negative electrode material comprises an inner core and a coating layer coating the outer side of the inner core, the inner core is graphite, and the coating layer is graphite. And the coating layer is a carbon layer doped with metal M atoms and oxide nano-clusters / particles of the metal M atoms. The coating layer doped with the metal M atoms and the oxide nano-clusters / particles of the metal M atoms can effectively reduce the diffusion barrier of Li < + >, and the lithium intercalation potential (greater than 0.3) of MOx is higher than that (0.02-0.2 V) of graphite, so that the probability of precipitation of Li < + > on the surface of the graphite due to polarization is reduced, and the risk of lithium precipitation is reduced.

The invention discloses a hybrid bonding structure and a semiconductor device. The mixed bonding structure comprises a first dielectric layer, wherein a metal barrier layer and metal are arranged in the first dielectric layer; an insulating barrier layer and metal are arranged in the second dielectric layer; wherein the first dielectric layer and the second dielectric layer are bonded to form a bonding interface layer; the metal in the first dielectric layer is bonded with the metal in the second dielectric layer to form a metal structure; wherein the metal barrier layer is in contact with the insulating barrier layer to form a diffusion barrier structure, and the diffusion barrier structure separates the bonding interface layer. The hybrid bonding structure can improve the performance of the device.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

The utility model discloses an oxygen sensor and a vehicle, and belongs to the field of oxygen sensors. The oxygen sensor includes: a first electrolyte layer and a second electrolyte layer; the first electrolyte layer and the second electrolyte layer are stacked in the first direction, and a porous diffusion barrier is printed on one of the first electrolyte layer and the second electrolyte layer. In the embodiment of the invention, the porous diffusion barrier is printed on one of the first electrolyte layer and the second electrolyte layer, so that the use of a filling matrix layer can be avoided, punching on the filling matrix layer is avoided, and the porous diffusion barrier is embedded in the punched hole on the filling matrix layer, which is equivalent to omitting a punching process; the processing technology of the oxygen sensor is simplified, the production efficiency of the oxygen sensor can be improved, the filling matrix layer is saved, the manufacturing cost of the oxygen sensor can be reduced, and large-scale production of the oxygen sensor is facilitated.

A method for forming a gate structure according to embodiments of the present disclosure includes: receiving a precursor structure, the precursor structure including a substrate, a first nanostructure located above a first region of the substrate, and a second nanostructure located above a second region of the substrate; depositing a gate dielectric layer over the first nanostructure and the second nanostructure; depositing a first work function metal layer over the first nanostructure and the second nanostructure; depositing a diffusion barrier layer over the first work function metal layer; selectively removing the diffusion barrier layer and the first work function metal layer from the first nanostructure above the first region; depositing a second work function metal layer over the first nanostructure and the second nanostructure; and depositing a metal filler layer over the second work function metal layer. Embodiments of this application also relate to semiconductor structures and methods for forming the same.

The invention relates to a field emission cathode structure and a preparation method thereof. The method comprises the following steps: obtaining a first substrate layer with a polished surface, wherein the first substrate layer adopts a silicon wafer or a metal sheet; processing the first substrate layer into an arrayed grid mesh; sequentially depositing a metal conductive layer and a diffusion barrier layer on the outer surface of the grid mesh; depositing a SiNx electret layer on the diffusion barrier layer, and regulating and controlling nitrogen vacancy distribution of the SiNx electret layer through a gradient doping process; depositing an Al2O3 gradient heterojunction layer on the SiNx electret layer, and regulating and controlling the oxygen vacancy concentration of the Al2O3 gradient heterojunction layer through a gradient doping process to obtain a composite electret grid mesh; and aligning and bonding the composite electret grid mesh, the arrayed cathode emitter and the insulating layer to obtain the field emission cathode structure. By adopting the method, the high emission efficiency and stability of the cathode can be improved.

The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method includes: providing a substrate structure having an array region and a peripheral region, and having a first dielectric layer with a contact plug therein; forming a second dielectric layer on the first dielectric layer; etching the second dielectric layer in the array region and the peripheral region to a preset depth to form a first trench corresponding to covering the contact plug, the preset depth being less than a height of the second dielectric layer; forming a first spin-on layer in the first trench; etching the first spin-on layer in the first trench in the peripheral region to form a second trench, and exposing the second dielectric layer at a bottom of the first trench; etching the second dielectric layer in the second trench to expose the contact plug to form a filling hole; removing the remaining first spin-on layer to form a diffusion barrier layer conformally in the first trench and the filling hole, the diffusion barrier layer being connected with the contact plug; and forming a metal layer on the diffusion barrier layer. The method of the present disclosure can improve the electrical performance and yield of the semiconductor structure.

The invention belongs to the technical field of conductive paste, and relates to conductive paste for an aluminum nitride matrix and a preparation method of the conductive paste. The conductive paste comprises the following components in percentage by mass: 1%-5% of glass powder, 15%-20% of an organic carrier and the balance of mixed silver powder. Wherein the glass powder contains 1%-4% of CeO2 and is used for enhancing the stability of a glass phase and interface bonding; the mixed silver powder is formed by mixing silver powder and 0.5%-2% of NiO in advance and used for forming a diffusion barrier layer on a silver particle interface and refining a silver crystal phase. The invention also provides a preparation method of the conductive paste, which comprises the following steps: uniformly grinding and mixing the mixed silver powder and the glass powder, adding the organic carrier, and grinding and mixing to obtain a mixture; and rolling and grinding the mixture to prepare the conductive paste.

The invention relates to the technical field of material surface engineering and extreme working condition tribology, in particular to a wide-temperature-range composite lubricating component based on multi-scale design and interface self-adaption and a preparation method of the wide-temperature-range composite lubricating component based on multi-scale design and interface self-adaption. The composite lubricating structure comprises, from inside to outside, a metal bonding layer; the composition of the diffusion barrier layer is continuously and gradually changed from the alloy composition matched with the metal bonding layer to the ceramic composition; the self-lubricating functional layer comprises a ceramic metal composite matrix and a plurality of lubricant capsules dispersed in the ceramic metal composite matrix; the lubricant capsule comprises a ceramic shell layer and at least two lubricating phases with different temperature activation characteristics wrapped by the ceramic shell layer. According to the invention, continuous and effective lubrication in a wide temperature range is realized, the friction coefficient can be stabilized below 0.3, and the problems of reduction of the binding force between a coating and a matrix and early failure are solved.

A CdTe based thin film solar cell device (10) and a method for manufacturing it in superstrate configuration are provided. The CdTe based thin film solar cell device (10) comprises a CdTe based absorber layer (13) comprising a first partial layer (131) being a selenium-rich CdTe layer, a second partial layer (133) having a smaller selenium content than the first partial layer (131), and a diffusion barrier layer (132) between the first partial layer (131) and the second partial layer (133). The diffusion barrier layer (132) is a layer having a band gap larger than that of the first partial layer (131) and a crystal structure differing from the crystal structure of the first partial layer (131). The method for manufacturing comprises a step of forming the CdTe based absorber layer (131), wherein this step comprises depositing a first layer, a second layer and a third layer and performing a thermal treatment after depositing all of these layers. As a result of the thermal treatment, the first partial layer (131) is formed from the first layer, the diffusion barrier layer (132) is formed from the second layer and the second partial layer (133) is formed from the third layer.

A semiconductor device includes an insulating layer having formed therein a gate electrode and overlying a substrate, a stack of a gate dielectric including a gate dielectric material, a dielectric diffusion barrier liner including a dielectric diffusion barrier material, and an active layer overlying a top surface of the gate electrode, and a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. The dielectric diffusion barrier material is different from the gate dielectric material and is selected from a dielectric metal oxide material and a dielectric compound of silicon, and suppresses loss of metallic elements during subsequent anneal processes.

A method of forming a semiconductor device includes providing a substrate having a patterned film including manganese; depositing a graphene layer over exposed surfaces of the patterned film; depositing a dielectric layer containing silicon and oxygen over the graphene layer; and heat-treating the substrate to form a manganese-containing diffusion barrier region between the graphene layer and the dielectric layer.

This Nb3Sn superconducting wire precursor comprises a cylindrical stabilized copper layer, a cylindrical first Sn diffusion barrier layer provided inside the copper layer, and a superconducting element group precursor housed inside the barrier layer. The superconducting element group precursor includes a plurality of Sn-based reinforced element wires and a plurality of Nb-based superconducting element wire precursors. The reinforced element wires include a Cu or Cu-based alloy first stabilization matrix, a plurality of Sn-based filaments that are Sn or Sn-based alloys and that are embedded in the first stabilization matrix, and a plurality of reinforcement-material multi-core wires that are configured from a plurality of metal or alloy-made reinforcement filaments. The wire precursors comprise a second stabilization matrix of Cu or a Cu-based alloy, and an Nb-based superconducting filament precursor that is Nb or an Nb-based alloy and that is embedded in the second stabilization matrix.

The invention relates to the technical field of metal materials, and particularly discloses light-weight high-toughness medium manganese steel and a preparation method and application thereof. The method comprises the following steps: firstly, pre-oxidizing a hot rolled plate in a specific low oxygen partial pressure atmosphere, and forming a compact Al2O3-MnO composite oxide layer which is well combined with a matrix on the surface in situ; and then, in multi-pass warm rolling, synchronous plastic deformation of the oxide layer and the base body can be achieved, and interface stripping is avoided. And finally, in the circulating annealing process, a surface oxide layer serves as a diffusion barrier to inhibit Mn element leakage and enrich the Mn element towards the core, so that the heterogeneous structure with the continuous gradient characteristic is successfully constructed, specifically, the surface layer is superfine martensite, the transition area is an austenite-ferrite double-phase structure, and the core is Mn-rich coarse grain austenite. The gradient tissue enables the material to have high strength, high wear resistance and high plasticity at the same time, and is suitable for medical instruments with comprehensive requirements for mechanical properties, light weight and biocompatibility, such as knee joint tractor fixing braces.

A semiconductor structure according to the present disclosure includes a first active region and a second active region, a first gate structure disposed over the first active region, a second gate structure disposed over the second active region, and a gate isolation feature sandwiched between a sidewall of the first gate structure and a sidewall of the second gate structure. The gate isolation feature includes: a first dielectric layer bordering a sidewall of the first gate structure and a sidewall of the second gate structure; a diffusion barrier liner bordering the first dielectric layer; and a second dielectric layer interfacing with the diffusion barrier liner. The second dielectric layer is spaced apart from the first dielectric layer by the diffusion barrier liner. The embodiment of the invention also provides a method for forming the semiconductor structure.

The invention provides a preparation method of an anti-oxidation coating from inside to outside, which comprises the following steps: A) preparing an MCrAlY alloy layer on the surface of a pretreated matrix, M being one or more selected from Ni, Co or Fe; b) spraying MCrAlY powder and nano ceramic powder on the surface of the MCrAlY alloy layer to obtain a nanocrystalline composite layer; c, the nanocrystalline composite layer is subjected to laser remelting and then cooled, and the anti-oxidation coating is obtained.The compact diffusion barrier layer is prepared through a controllable atmosphere spraying technology, is used for inhibiting easy-to-oxidize elements in a base body from migrating to the surface under the high-temperature service condition and is suitable for high-temperature components such as aero-engine blades and nuclear reactor components.

The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

Provided herein is a high temperature metallization structure with a refractory diffusion barrier for high-speed computing, RF, High Temperature Controls, and mmWave electronics and components.

The invention discloses a (Ni, Pt) Al / Ni composite coating of a single-crystal high-temperature alloy, the composite coating takes the single-crystal high-temperature alloy as a matrix, the composite coating is a single-layer coating formed by single-phase beta-(Ni, Pt) Al, and no mutual diffusion zone exists between the composite coating and the matrix. The preparation method comprises the following steps: firstly, pre-electroplating Ni on the surface of the substrate as a transition layer, then electroplating a Pt layer, carrying out hydrogen removal and diffusion vacuum annealing treatment and high-temperature low-activity gas phase aluminizing treatment, and finally, forming the composite coating on the surface of the substrate. The composite coating and the pre-plated Ni layer are introduced as a diffusion barrier layer, so that direct contact between the Pt layer and the matrix is effectively blocked, mutual diffusion between the Pt layer and the matrix is inhibited, damage to a coherent phase structure in the matrix and formation of a TCP precipitated phase caused by mutual diffusion of Ni and Al are delayed, formation of a secondary reaction zone is delayed, and the material stability is ensured. The composite coating provided by the invention is a high-temperature protective coating with slow oxidation weight gain at high temperature.