900results about How to "Reduce diffuse" patented technology

By performing a plasma treatment for efficiently sealing the surface of a stressed dielectric layer containing silicon nitride, an enhanced performance during the patterning of contact openings may be achieved, since nitrogen-induced resist poisoning may be significantly reduced during the selective patterning of stressed layers of different types of intrinsic stress.

A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the intrinsic wafer. The intrinsic wafer can be composed of CdZnTe or CdTe, the P-doped layer can be composed of ZnTe doped with copper, and the N-doped layer can be composed of CdS doped with indium. The boundary layers is formed of an undoped semiconductor material. The boundary layer can be deposited onto the underlying intrinsic wafer. The doped regions are then typically formed by a deposition process or by doping a section of the deposited boundary layer.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.

A structure and a method of manufacturing a double-gate metal oxide semiconductor transistor includes forming a laminated structure having a single crystal silicon channel layer and insulating oxide and nitride layers on each side of the single crystal silicon channel, forming openings in the laminated structure, forming drain and source regions in the openings, doping the drain and source regions, forming a mask over the laminated structure, removing portions of the laminated structure not protected by the mask, removing the mask and the insulating oxide and nitride layers to leave the single crystal silicon channel layer suspended from the drain and source regions, forming an oxide layer to cover the drain and source regions and the channel layer, and forming a double-gate conductor over the oxide layer such that the double-gate conductor includes a first conductor on a first side of the single crystal silicon channel layer and a second conductor on a second side of the single crystal silicon channel layer.

An integrated circuit and method of fabricating the integrated circuit is disclosed. The integrated circuit includes vertical bipolar transistors (30, 50, 60), each having a buried collector region (26′). A carbon-bearing diffusion barrier (28c) is disposed over the buried collector region (26′), to inhibit the diffusion of dopant from the buried collector region (26′) into the overlying epitaxial layer (28). The diffusion barrier (28c) may be formed by incorporating a carbon source into the epitaxial formation of the overlying layer (28), or by ion implantation. In the case of ion implantation of carbon or SiGeC, masks (52, 62) may be used to define the locations of the buried collector regions (26′) that are to receive the carbon; for example, portions underlying eventual collector contacts (33, 44c) may be masked from the carbon implant so that dopant from the buried collector region (26′) can diffuse upward to meet the contact (33). MOS transistors (70, 80) including the diffusion barrier (28) are also disclosed.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer deposition process (a vapor deposition process that includes a plurality of deposition cycles) with a refractory metal precursor compound, an organic amine, and an optional silicon precursor compound.

The present invention comprises a method for forming a semiconducting device including the steps of providing a layered structure including a substrate, a low diffusivity layer of a first-conductivity dopant; and a channel layer; forming a gate stack atop a protected surface of the channel layer; etching the layered structure selective to the gate stack to expose a surface of the substrate, where a remaining portion of the low diffusivity layer provides a retrograded island substantially aligned to the gate stack having a first dopant concentration to reduce short-channel effects without increasing leakage; growing a Si-containing material atop the recessed surface of the substrate; and doping the Si-containing material with a second-conductivity dopant at a second dopant concentration. The low diffusivity layer may be Si1-x-yGexZy, where Z can be carbon (C), xenon (Xe), germanium (Ge), krypton (Kr), argon (Ar), nitrogen (N), or combinations thereof.

High performance (surface channel) CMOS devices with a mid-gap work function metal gate are disclosed wherein an epitaxial layer is used for a threshold voltage Vt adjust / decrease for the PFET area, for large Vt reductions (˜500 mV), as are required by CMOS devices with a mid-gap metal gate. The present invention provides counter doping using an in situ B doped epitaxial layer or a B and C co-doped epitaxial layer, wherein the C co-doping provides an additional degree of freedom to reduce the diffusion of B (also during subsequent activation thermal cycles) to maintain a shallow B profile, which is critical to provide a surface channel CMOS device with a mid-gap metal gate while maintaining good short channel effects. The B diffusion profiles are satisfactorily shallow, sharp and have a high B concentration for devices with mid-gap metal gates, to provide and maintain a thin, highly doped B layer under the gate oxide.

A method of forming (and apparatus for forming) tantalum suicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

An accommodating intraocular lens is provided having optical parameters that are altered in-situ, wherein an optic portion of the lens includes an actuator that deflects a lens element to alter the optical power of the lens, responsive to forces applied to a haptic portion to the lens by contraction of the ciliary muscles. Forces applied to the haptic portion may result in fluid displacements from or to the haptic portion from the actuator. Displacement of fluid to the actuator may either increase or reduce the degree of deflection imposed on the lens element by the actuator.

A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a vapor deposition process with a refractory metal precursor compound, a disilazane, and an optional silicon precursor compound.

A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

An accommodating intraocular lens is provided having optical parameters that are altered in-situ, wherein an optic portion of the lens includes an actuator that deflects a lens element to alter the optical power of the lens, responsive to forces applied to a haptic portion to the lens by contraction of the ciliary muscles. Forces applied to the haptic portion may result in fluid displacements from or to the haptic portion from the actuator. Displacement of fluid to the actuator may either increase or reduce the degree of deflection imposed on the lens element by the actuator.

Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.

The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a CxHy containing material, wherein x and y are each integers greater than or equal to a value of unity. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

An enteric coated oral pharmaceutical formulation comprising as active ingredient a compound selected from the group of omeprazole, an alkaline salt of omeprazole, one of the single enantiomers of omeprazole and an alkaline salt of one of the single enantiomers of omeprazole, wherein the formulation comprises a core material that comprises the active ingredient and optionally an alkaline reacting compound, the active ingredient is in admixture with a pharmaceutically acceptable excipient, such as for instance a binding agent, and on said core material a separating layer and an enteric coating layer. A hydroxypropyl cellulose (HPC) with a specific cloud point is used in the manufacture of the claimed pharmaceutical formulations. Furthermore, the application describes the processes for their preparation and the use of the claimed formulations in medicine.

A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.

An apparatus for determining a location of at least one object on a touch surface, comprising: a light transmissive panel defining the touch surface and including a controllable reflective boundary; an illumination arrangement configured to introduce light into the panel; a control device configured to selectively control the reflective boundary such that the light may pass between a first layer and a second layer via an opening in the reflective boundary; a light detection arrangement configured to measure the light passed via the opening and impinged on the touch surface; and a processor unit configured to determine the location as a function of the measured light passed via the opening and the selective control of the reflective boundary. A method and computer readable medium is also described.

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to an alkyl silane, an alkoxysilane, an alkyl siloxane, an alkoxysiloxane, an aryl silane, an acyl silane, a cyclo siloxane, a polysilsesquioxane (PSS), an aryl siloxane, an acyl siloxane, or a halo siloxane, or any combination thereof. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing. As a result of the etch processing or ashing, exposed surfaces in the feature formed in the dielectric film can become damaged, or activated, leading to retention of contaminants, absorption of moisture, increase in dielectric constant, etc. Damaged surfaces, such as these, are treated by performing at least one of healing these surfaces to, for example, restore the dielectric constant (i.e., decrease the dielectric constant) and cleaning these surfaces to remove contaminants, moisture, or residue. Moreover, preparation for barrier layer and metallization of features in the film may include treating by performing sealing of sidewall surfaces of the feature to close exposed pores and provide a surface for barrier film deposition.

Described is a stable initial impact and continuous impact fragrance and / or benefit agent-imparting aqueous suspension of microencapsulated fragrance and / or benefit agent, e.g., malodour counteractant suspended in a non-confined fragrance-containing and / or benefit agent-containing liquid phase oil-in-water emulsion. On storage, the viscosity of the suspension undergoes a minimal increase over an extended period of time thereby avoiding undesirable agitation resistance during the blending of the suspension with other materials. The suspension is thus useful for imparting a benefit or an aroma to a consumable material such as a liquid anionic, cationic, non-ionic or zwitterionic detergent, a shampoo, a bodywash, liquid soaps, hair conditioners, skin lotions, anti-perspirants, deodorants or liquid fabric softener and / or conditioner compositions. Also described is a process for preparing such stable suspensions and apparatus for carrying out such process.

One or more external surfaces of an extruded foam are coated by co-extruding a skin of polymer on the surface to reduce the diffusion the foaming gases out of the cells of the solidifying polymer foam. The sealing effect can involve coating one side of the extruded foam (AB foam) or both sides (ABA form). The skins can be solid or foamed. Alternatively, a cylinder is formed from an annular die and, preferably, a cylindrical cooling mandrel. By extruding and drawing the cylinder of foam onto a cooled cylindrical mandrel, which expands the diameter of the cylinder, the optimum physical properties of the structure can be achieved. This is because the foam structure is stretched in longitudinal and lateral directions. Preferable, the foaming polymer has “inherent melt strength” and “strain hardening” so that the foam cells are more consistent in size and shape. The preferred polymers are polypropylene or polystyrene.

A copper damascene structure formed by direct patterning of a low-dielectric constant material is disclosed. The copper damascene structure includes a tungsten nitride barrier layer formed by atomic layer deposition using sequential deposition reactions. Copper is selectively deposited by a CVD process and / or by an electroless deposition technique.

A method involves pre-heating a workpiece to an intermediate temperature, heating a surface of the workpiece to a desired temperature greater than the intermediate temperature, and enhancing cooling of the workpiece. Enhancing cooling may involve absorbing radiation thermally emitted by the workpiece. An apparatus includes a first heating source for heating a first surface of a semiconductor wafer, a second heating source for heating a second surface of the semiconductor wafer, and a first cooled window disposed between the first heating source and the semiconductor wafer.

A syringe-type container comprising a hollow main body with a distal outlet opening and a proximal actuation opening for inserting an actuation element. A piston is displaceably arranged inside the main body for discharging a flowable product from the container. To reduce the permeability of the container, the main body has a diffusion-reducing layer. The outlet opening is closed with a first removable or severable seal, and the actuation opening is closed with a second seal.

The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.

An organic light emitting display device comprises: a substrate; a plurality of thin film transistors (TFTs) formed on a first surface of the substrate; a passivation layer covering the plurality of TFTs; a plurality of first pixel electrodes formed on the passivation layer and respectively electrically connected to the plurality of TFTs, and overlapping with the plurality of TFTs so as to cover the plurality of TFTs, and including a reflection layer formed of a light-reflecting conductive material; a second pixel electrode formed of a light-transmitting conductive material and disposed on the passivation layer so as to be electrically connected to the plurality of first pixel electrodes; an opposite electrode formed such that light is transmitted or reflected therethrough, and disposed opposite the plurality of first pixel electrodes and the second pixel electrode; and an organic layer interposed between the plurality of first pixel electrodes and the second pixel electrode, and including an emission layer. Accordingly, transmittivity of the organic light emitting display device is increased, and optical outcoupling efficiency of the organic light emitting display device is also increased during double-sided emission.

An improved cathode suitable for lithium-sulfur batteries, a battery including the cathode, and a battery including a separator containing inorganic fillers are disclosed. The cathode includes sulfur and a metal oxide and optionally includes an additional polymeric material. The metal oxide reduces dissolution of sulfur at the cathode and reduces sulfur-containing deposits on the battery anode, thereby providing a battery with relatively high energy density and good partial discharge performance. The separator also reduces unwanted diffusion of sulfur species.