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4678results about How to "Reduce penetration" patented technology

Semiconductor devices with reduced active region defects and unique contacting schemes

A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (f) planarizing the top of the device to remove all epitaxial regions that extend above the top of the cladding layer, thereby making the top of the first predetermined region grown in the second opening essentially flush with the top of the cladding region; and (g) performing additional steps to complete the fabrication of the device. Also described are unique devices, such as photodetectors and MOSFETs, fabricated by this method, as well as unique contacting configurations that enhance their performance.
Owner:NOBLE DEVICE TECH CORP +2

Semiconductor devices with reduced active region defects and unique contacting schemes

A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; (b) forming a first opening that extends to a first depth into the cladding region; (c) forming a smaller second opening, within the first opening, that extends to a second depth greater than the first depth and that exposes an underlying portion of the major surface of the single crystal body; (d) epitaxially growing regions of a second semiconductor material in each of the openings and on the top of the cladding region; (e) controlling the dimensions of the second opening so that defects are confined to the epitaxial regions grown within the second opening and on top of the cladding region, a first predetermined region being located within the first opening and being essentially free of defects; (D planarizing the top of the device to remove all epitaxial regions that extend above the top of the cladding layer, thereby making the top of the first predetermined region grown in the second opening essentially flush with the top of the cladding region; and (g) performing additional steps to complete the fabrication of the device. Also described are unique devices, such as photodetectors and MOSFETs, fabricated by this method, as well as unique contacting configurations that enhance their performance.
Owner:NOBLE DEVICE TECH CORP +1

Method of conducting a needle biopsy procedure

A vibration assisted needle device is disclosed for use in medical procedures such as needle aspiration biopsies. Reciprocation of the needle, such as a biopsy needle, eases the advance of the needle through tissue, penetration of the site of interest and the collection of sample at a site of interest. The device comprises a housing defining a chamber, a needle support external to the chamber for supporting a needle and a mechanism in the chamber for causing reciprocatory motion of the needle support. The needle support is preferably external to the housing. A syringe support may be connected to the housing for supporting a syringe. The reciprocatory mechanism may comprise means for converting rotational motion into reciprocating motion, such as a bearing or a rotor with a circumferential, angled groove on its surface, coupled to the needle support. The bearing or the rotor may be driven by a rotational motor, preferably located outside of the housing, or by a hydraulically driven turbine within the housing. Alternatively, the reciprocatory mechanism means may comprise a stationary solenoid and a movable solenoid for being coupled to the needle. Preferably, a second stationary solenoid is provided and the moving solenoid is between the two stationary solenoids. Energization of the stationary solenoid or solenoids by an alternating current for example, and energization of the movable solenoid by a direct current, or vice versa, attracts and repulses the movable solenoid, causing reciprocation of the needle. Methods and systems using the vibration assisted needle device are also disclosed.
Owner:FONAR
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