Process for the production of thin semiconductor material films

Abstract

Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the face (4) of the said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles defining in the volume of said wafer a lower region (6) constituting the mass of the substrate and an upper region (5) constituting the thin film, a second stage of intimately contacting the planar face (4) of said wafer with a stiffener (7) constituted by at least one rigid material layer, a third stage of heat treating the assembly of said wafer (1) and said stiffener (7) at a temperature above that at which the ion bombardment (2) was carried out and sufficient to create by a crystalline rearrangement effect in said wafer (1) and a pressure effect in the said microbubbles, a separation between the thin film (5) and the mass of the substrate (6).

Description

BACKGROUND OF THE INVENTION[0001]The present invention relates to a process for the production of thin semiconductor material films, preferably applicable to the production of monocrystalline films.[0002]It is known that for producing monocrystalline semiconductor films there are various methods and processes, which are often complex and expensive to carry out, because although it is relatively easy to produce polycrystalline or amorphous material films, it is much more difficult to produce monocrystalline films.[0003]Among the methods used for producing monocrystalline films are those used for producing socalled “silicon on insulator” substrates, where the aim is to produce a monocrystalline silicon film resting on a substrate electrically insulated from the film.[0004]By crystal growth heteroepitaxy methods make it possible to grow an e.g. thin film silicon crystal on a monocrystalline substrate of another type, whose lattice parameter is close to that of silicon, e.g. a sapphire ...

AI Technical Summary

Benefits of technology

[0012]The present invention relates to a process for producing thin semiconductor material films making it possible to overcome the aforementioned disadvantages without requiring an initial substrate of a ...

Problems solved by technology

It is known that for producing monocrystalline semiconductor films there are various methods and processes, which are often complex and expensive to carry out, because although it is relatively easy to produce polycrystalline or amorphous material films, it is much more difficult to produce monocrystalline films.

The various methods for producing thin monocrystalline films suffer from the disadvantages associated with the production procedures.

Heteroepitaxy methods are limited by the nature of the substrate, because the lattice parameter of the substrate is not precisely the same as that of the ...

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