The application provides a method for controlling the shape of a
cut silicon wafer by multi-
wire cutting, and relates to the technical field of control methods for
cutting silicon wafers. A second
water cooling cavity is arranged in the axial direction of a main roller, a first
water cooling cavity is opened on a rack, and the expansion amount of the main roller and the rack is monitored by a monitoring part. Cold water with a second predetermined
temperature curve and a first
temperature curve is introduced into the second
water cooling cavity and the first water cooling cavity, and the
temperature curve of the
mortar liquid is matched, so that the position deviation and the displacement deviation of the main roller caused by the
relative displacement of the position deviation and the displacement deviation of the main roller due to the
thermal expansion of the
crystal ingot are prevented, the large shape variable of the
cut silicon wafer is prevented, and the expansion conditions of the
crystal ingot in different
cutting areas caused by the expansion of the rack are positively and negatively compensated. As a result, the shape of the whole
cutting process is controllable, the flatness of the silicon
wafer is improved, the NT 10*10 and NT 2*2 of the silicon wafer are reduced, and the nano is improved, so that the warp value of the silicon wafer is reduced as a whole, the area is flat, and the quality of the silicon wafer is better.