1841results about "Fine working devices" patented technology

The invention provides a laser positioning method for improving gemstone cutting precision, and belongs to the technical field of gemstone cutting laser positioning. A gemstone crystal refractive index tensor model and a ray tracing algorithm are established to simulate a propagation path of light in a gemstone; a thermo-optic effect prediction model is adopted to predict a focus drift distance according to temperature distribution and laser power data and calculate wavefront predistortion phase distribution for compensation, and a zero-vibration input shaping filter is designed for a galvanometer scanning system to suppress residual vibration. A composite control strategy that feedforward control compensates inertia lag and feedback control corrects position errors is adopted to drive a galvanometer, the inherent frequency of a system is recognized through spectral analysis, and the scanning frequency is adjusted to avoid resonance. The technical problem that in the long-time machining process, due to the thermo-optic effect and vibration of a galvanometer scanning system, the laser focus point position generates accumulated drifting, and the cutting precision is reduced is solved.

The embodiment of the invention provides a dicing saw cutting pressure control method and device based on dynamic pressure prediction and a dicing saw. The method comprises the steps that S1, real-time material characteristic parameters on a cutting path are obtained through a multi-source sensor; s2, based on the material characteristic parameters, a dynamic mapping model of material characteristics and cutting pressure is established, and output parameters are predicted pressure compensation values; s3, before a cutting tool reaches a pressure sudden change area, cutting pressure is adjusted in advance according to a predicted pressure compensation value output by the dynamic mapping model, meanwhile, an actual pressure value is detected in real time through a force sensor, and pressure deviation is corrected in combination with a control algorithm; and S4, carrying out staged pressure loading on the non-uniform doping region in the heterogeneous material. According to the method, the pressure sudden change point is predicted through the dynamic mapping model, the pressure is adjusted in advance in combination with a control algorithm, and the characteristics of the adaptive heterogeneous material are loaded in stages, so that the shear mark uniformity is remarkably improved, and the material damage risk is reduced.

The invention provides a cutting height adjusting method and device of a cutting knife, wafer processing equipment and a medium, and relates to the technical field of wafer processing equipment.The method comprises the steps that the surface height difference between a sample silicon wafer on an auxiliary workbench and a to-be-processed wafer on a main working disc is measured; after the cutting knife cuts the sample silicon wafer to form a cutting mark, calculating a cutting depth value corresponding to the cutting mark; calculating the surface height information of the sample silicon wafer according to the cutting depth value of the cutting mark and the height information corresponding to the lowest point of the cutting knife when the cutting knife cuts the sample silicon wafer on the auxiliary workbench; and according to a preset cutting depth value, the surface height information of the sample silicon wafer and the surface height difference between the sample silicon wafer on the auxiliary workbench and the to-be-processed wafer, target cutting height information of the cutting knife when the cutting knife cuts the to-be-processed wafer is determined. After the height of the cutting knife is adjusted according to the target cutting height information, the cutting mark cut by the cutting knife has high-precision cutting depth.

The invention relates to the technical field of wafer cutting, in particular to a high-stability wafer bearing platform for a wafer cutting machine, which comprises a first base, a lifting power part and a bearing table, the first base is provided with an accommodating groove; the lifting power piece is arranged in the accommodating groove; the bearing table comprises a driving ring and an objective table; the driving ring is rotationally arranged at the top of the first base; a plurality of driving tables are arranged at the edge position of the driving ring in the circumferential direction; a central shaft is arranged on the bottom surface of the objective table; the central shaft downwards penetrates through the driving ring, then extends into the accommodating groove and is connected with the output end of the lifting power piece; the central shaft is matched with the molded surface of the driving ring; a plurality of clamping assemblies in one-to-one correspondence with the driving tables are arranged at the edge position of the objective table in the circumferential direction; the clamping assembly can press a wafer placed on the top face of the objective table downwards and limit the wafer in the radial direction under the action of the driving table. According to the invention, the stability and reliability during wafer cutting or movement are improved.

The invention provides a precise air floating main shaft based on small hole throttling. The precise air floating main shaft comprises a cylinder barrel, a shell, a rotating shaft, a front radial air floating bearing, a rear radial air floating bearing, a front axial thrust air floating bearing, a rear axial thrust air floating bearing, a driving motor, a broach mechanism and various sensors. A reciprocating type spiral groove is formed in the outer circle of the cylinder barrel and forms a spiral cooling water channel with the shell, and the rear end cover is integrated with an air inlet interface, an air outlet interface, a cooling water interface and an air control interface; compressed gas is throttled through an axial gas path and a small hole to form a high-rigidity gas film to support the rotating shaft, and cooling water flows in the spiral water path to take away heat; the control module is based on rotating speed, displacement, temperature and pressure signals, adopts a thermal-mechanical coupling model and a predictive control algorithm, adaptively adjusts air supply pressure and cooling water flow, and is suitable for semiconductors and ultra-precision machining equipment. Through the collaborative design of the small hole throttling air bearing, the reciprocating type spiral cooling water channel and multi-sensor intelligent control, the rigidity, the heat stability and the operation reliability of the main shaft are greatly improved, and the high-precision ultra-precision machining device is suitable for long-term high-rotating-speed and high-precision ultra-precision machining.

The invention relates to the technical field of precision machining control, and discloses an intelligent control method for a cutting path of a scribing machine, which comprises the following steps: acquiring a load current signal of a main shaft servo motor in real time and storing the load current signal into a sliding window data queue; performing weighted differential calculation to obtain a real-time load change rate representing a load trend, and calculating an average absolute deviation to obtain an oscillation state quantity representing load dispersion; querying based on a preset nonlinear gain scheduling relationship to obtain a first speed regulation coefficient and an oscillation suppression coefficient; according to the method, an orthogonal dual-channel feed-forward control mechanism is constructed in the same data window, and multiplication cooperation of weighted differential and dispersion statistics is utilized, so that a feed speed set value is corrected in real time; the problems of phase lag and response mismatch of conventional feedback control in the case of transient impact and microcosmic oscillation of hard and brittle materials are solved.

The invention discloses a cutting and polishing combined machining treatment method suitable for polycrystalline silicon. The method comprises the following steps: step 1, silicon ingot pretreatment: loading historical process data of a silicon ingot in combination with a block chain technology, generating a machining parameter packet, and issuing the machining parameter packet to cutting and polishing equipment to form a machining quantization instruction set; a plasma channel is formed through combination of femtosecond laser focusing and high-frequency electromagnetic field constraint for cutting, annular laser is synchronously used for deep micro-area fusion polishing, and the surface roughness of the cut silicon wafer is reduced by means of argon protection and the surface tension self-leveling effect; 3, polishing: immersing the anode of the silicon wafer into TEMPO / [EMIM] [BF] electrolyte, and regulating and controlling by using pulse voltage; 4, cleaning and drying, wherein megasonic assisted nanobubble ultrapure water is adopted for flushing, and Malangori drying is carried out; and 5, quality control: verifying the surface appearance and the subsurface defect density, and carrying out secondary processing flow on the abnormal silicon wafer.

The invention relates to the technical field of wafer cutting machines, in particular to a large-stroke wafer cutting machine suitable for large-size wafer cutting, which comprises a base and a stand column arranged on the base, a placing assembly is movably arranged on the base; the stand column is movably provided with a movable base. A lifting seat is movably arranged on the moving seat; a cutter assembly is rotationally arranged at the bottom of the lifting base. A driving plate is movably arranged on the lifting seat; the driving plate is provided with a trigger pin in a floating manner; the lifting seat is provided with a reset plate at the top of the driving plate; a reset spring is arranged between the reset plate and the driving plate; the movable seat is provided with an ejector rod; a driving barrel is rotationally arranged on the lifting seat; a driving groove is formed in the outer wall of the driving barrel. Through one-time up-and-down circulating action of the lifting base, reversing of the cutter assembly can be achieved; after the cutter assembly is reversed, the placing assembly drives the wafer to move reversely, and the cutter assembly can continue to cut the next cutting channel of the wafer in a reverse cutting mode without returning to the initial side in an idle stroke, so that the cutting efficiency is improved.

The invention relates to the technical field of wafer cutting, in particular to a wafer cutting machine capable of quickly replacing cutters, which comprises a cutter rest, a main shaft and a centering mechanism, the main shaft is provided with a locking bayonet; the centering mechanism comprises a centering rotating disc, a locking sliding rod, a rotating disc and a pressing ring. A centering assembly is arranged on the centering rotary table in the circumferential direction; one end of the locking sliding rod is provided with a locking structure used for being matched with the locking bayonet in an unlocking and locking mode. The rotating disc is provided with a centering hole and a pressing assembly in the circumferential direction. The centering assembly is movably matched with the centering hole, so that when the rotating disc rotates, the rotating disc drives the centering assembly to extend out in the radial direction through the centering hole, the cutting blade is self-centered, the rotating disc continues to be rotated after the cutting blade is centered, and the centering assembly drives the corresponding pressing assembly to apply pressing force to the pressing ring; the cutting blade is pressed between the pressing ring and the knife rest; the blade replacement time is shortened, the operation of manually contacting the blade is reduced, the safety risk is reduced, and the mounting efficiency and the mounting precision are improved.

The invention provides a silicon carbide crystal ingot defect detecting and cutting device based on optical coherence tomography, and belongs to the technical field of silicon carbide crystal ingot defect detecting and cutting. In order to solve the technical problems that after a traditional crystal ingot is cut, the detection efficiency is low, imaging is not timely, the imaging resolution is low, and the portability and the linkage performance are poor due to the fact that detection equipment and cutting equipment are separated, the adopted technical scheme is that the output end of an OCT module is connected with the input end of a sample arm module through a wire; the sample arm module is installed below the sample arm support through the sample arm lifting support, and supporting legs on the two sides of the sample arm support are installed on the base. A fixed seat is arranged right below the sample arm module, the fixed seat is mounted on the base through a lifting base, and a crystal ingot is placed on the fixed seat; rolling wheels are further arranged on the two sides of the fixing base and placed on the base, and a cutting line is further connected between the two rolling wheels; the method is applied to defect detection of the silicon carbide crystal ingot.

The invention provides a wafer stripping device and a control method thereof, and belongs to the technical field of semiconductor processing. The wafer stripping device comprises an ultrasonic water tank, wherein a liquid medium for transmitting ultrasonic waves is accommodated in the ultrasonic water tank; the ultrasonic generator is arranged in the liquid medium, and the radiating surface of the ultrasonic generator faces the top of the ultrasonic pool; the movement mechanism is used for installing the crystal ingot, so that the target end of the crystal ingot faces the ultrasonic water tank, the target end of the crystal ingot is close to the modified layer, the end face of the target end is parallel to the radiating surface of the ultrasonic generator, and the movement mechanism is further used for controllably driving the crystal ingot to rotate in the axial direction of the crystal ingot and move in a reciprocating mode in the horizontal direction; wherein the movement mechanism is used for driving the crystal ingot to rotate at a preset rotating speed and move along the horizontal direction at a preset speed, so that the energy of the ultrasonic generator continuously acts on the modified layer of the crystal ingot to strip the wafer. According to the wafer stripping device, the probability of wafer cracking can be remarkably reduced.

The application discloses a silicon wafer cutting method and a silicon wafer, relates to the technical field of silicon wafer cutting, and is used for reducing the damage of a cutting line to a silicon wafer in the process of lifting the silicon wafer. The silicon wafer cutting method comprises the following steps: providing a silicon rod and a carrier plate; driving the silicon rod to move downward relative to a cutting line, so that the cutting line cuts the silicon rod to obtain a plurality of silicon wafers; and lifting the silicon wafers upward relative to the cutting line, wherein the movement mode of the cutting line in the carrier plate and the movement mode of the cutting line after the cutting line is separated from the carrier plate are different.

A silicon wafer processing device (100) and system (200). The silicon wafer processing device comprises a plurality of main rollers (10) arranged in sequence and cutting wires (20) wound around the periphery of the main rollers (10), wherein the cutting wires (20) form a wire mesh between the main rollers (10), and the wire mesh comprises a plurality of wiring areas arranged in sequence in the axial direction of the main rollers (10); the main rollers (10) are each provided with a plurality of wire grooves for winding the cutting wires (20); the plurality of wiring areas comprise a first area (a1) and a second area (a2), with the wiring spacing of the cutting wires (20) in the second area (a2) being greater than that of the cutting wires (20) in the first area (a1); thus, the increase in a wire bow and the limitation of a cutting force caused by lateral force concentration are reduced, and for the cutting wires (20) at the head of the first area (a1), the problems of wire overlapping and wire breakage between same and the adjacent cutting wires (20) can be effectively avoided.

The invention relates to a method for controlling the bending degree of a silicon wafer through thinning, which is used for analyzing substrates and epitaxy with different epitaxy specifications and determining the Bow optimization trend of the substrates, namely, the epitaxy changes backwards in the positive direction or the negative direction. By selecting the thinning machine table and the thinning grinding wheel, the front face and the back face are thinned respectively, and geometric parameters of the silicon wafers can be accurately adjusted in batches. It is ensured that the influence or change trend of a subsequent film forming or thermal resume process on the Bow value meets the expectation, and deterioration of geometric parameters is reduced. In addition, Bow adjustment of a single wafer can be achieved, the bending degree of the adjusted silicon wafer is accurately controlled by adjusting machining parameters of thinning equipment, then the bending degree is matched with epitaxial machining conditions, and the epitaxial wafer is made to be qualified or meet preset requirements.

The invention discloses a multi-wire cutting machine diamond wire active breakage prevention method and system. The method comprises the following steps that a detection assembly used for collecting various feature data of a diamond wire is installed on a to-be-detected multi-wire cutting machine; obtaining multiple groups of historical multi-class feature data, and performing fusion processing on the multiple groups of historical multi-class feature data to obtain multiple groups of fused historical feature vector sequences; constructing a mixed deep learning model, and training the mixed deep learning model by using the plurality of groups of historical feature vector sequences to obtain a prediction model; acquiring a feature vector sequence of the to-be-detected multi-wire cutting machine in real time and inputting the feature vector sequence into the prediction model; and taking corresponding active prevention measures based on the prediction result and the judgment threshold. According to the method, the tension, the vibration, the temperature, the speed and the arch height of the diamond wire are comprehensively considered, the running state of the diamond wire can be reflected more comprehensively and accurately, the accuracy of wire breakage risk prediction is improved, and corresponding active prevention measures can be taken after the wire breakage risk is predicted.

The invention relates to the field of solar silicon wafer cutting, in particular to a plastic plate and a preparation method and application thereof. The plastic plate is prepared from the following components in parts by weight: 30 to 48 parts of high glass transition temperature resin, 49 to 68 parts of polycarbonate resin, 1 to 5 parts of lubricant, 0.2 to 0.4 part of antioxidant and 0.05 to 0.25 part of plasticizer, wherein the glass transition temperature of the high glass transition temperature resin is 100-400 DEG C; the lubricant comprises silane coupling agent modified silicon powder. According to the plastic plate, the yield of silicon wafer cutting can be improved, the abrasion of the steel wire is reduced, and the service life of the steel wire is prolonged; and meanwhile, cutting heat can be reduced, and the cutting stability is improved.

The invention relates to the technical field of photovoltaic cells, in particular to a large-size N-type silicon wafer for a BC cell, a preparation method of the large-size N-type silicon wafer and the BC cell. The size of the large-size N-type silicon wafer is larger than or equal to 230 mm * 230 mm, the thickness of the large-size N-type silicon wafer is 90-130 microns, the edge of the large-size N-type silicon wafer is an arc chamfer, and the edge is wrapped with a SiNx layer; the large-size N-type silicon wafer comprises a central area and an edge area surrounding the central area, and the content of doped element antimony in the edge area is smaller than or equal to 1 * 10 < 15 > atoms / cm < 3 >. And the content of the doped element antimony in the central region is 1 * 10 < 16 >-5 * 10 < 16 > atoms / cm < 3 >. By arranging the edge arc chamfer, wrapping the SiNx layer and performing edge low doping, the mechanical strength can be ensured, the fragment rate can be reduced, meanwhile, edge carrier recombination can be reduced, the open-circuit voltage can be improved, and the power output of the battery can be improved.

The invention provides a wafer trimming device and wafer processing equipment, and the wafer trimming device comprises a rack which comprises a cross beam and a longitudinal track below the cross beam; the carrying platform can slide along the longitudinal track and is used for horizontally carrying the wafer and driving the wafer to rotate; the two trimming assemblies are installed on the cross beam through the two moving assemblies respectively and driven by the moving assemblies to move in the transverse direction and the vertical direction, each trimming assembly comprises a cutter wheel with the axis extending in the longitudinal direction, and the cutter wheels continuously rotate after the wafer trimming device is started; the wafer trimming device is configured as follows: a carrying table can move so that the transverse diameter of a wafer with the periphery provided with an annular notch with the section being a right-angle step can be matched with the longitudinal position of a cutter wheel, and two trimming assemblies transversely move to the positions, located at the two ends of the transverse diameter of the wafer, of the two cutter wheels correspondingly and make synchronous downward contact with the edge angle of the right-angle step; and cutting the edges of the right-angle steps into arc-shaped notches, and removing colloid bumps accumulated at the edges when the wafer is glued.

Methods and systems for processing semiconductor workpieces are provided. In one example, a system includes one or more laser source(s) having emission parameters configured to induce a nonthermal lattice modification in a semiconductor workpiece and one or more energy source(s) having different emission parameters relative to the laser source(s). The system is configured to induce a treatment region in the semiconductor workpiece with a laser emission from the laser source(s). The system is further configured to induce a damage region at the treatment region with an energy exposure from the energy source(s). In some examples, the system is further configured to perform a pre-separation treatment process on the damage region and, subsequent to the pre-separation treatment process, separate the semiconductor workpiece along the damage region using a removal process to produce one or more semiconductor die.

The invention relates to the technical field of superfinishing, in particular to a tool servo turning method assisted by a translation rotating platform, a medium and equipment. The five-axis lathe and the translation rotating platform are controlled to cut according to the paths of the independent areas to be machined by obtaining the cutting paths of the curved surface microlens array substrate to be machined and the cutting paths of the microlens units respectively. According to the method, the target structure is divided into the substrate area and the independent areas corresponding to the multiple micro-lens units, the independent spiral cutter cutting path is generated, the cutter path continuity is effectively improved, the method adapts to the dynamic characteristics of the machine tool servo shaft, efficient cutting parameters are conveniently selected, and the servo shaft tracking precision and the machining quality are improved. A regional step-by-step machining strategy is adopted, and each micro lens unit adopts an independent spiral cutter cutting path, so that the problems of inconsistent cutter paths and cutting state fluctuation caused by position difference in traditional single-path machining are solved, each micro lens unit is ensured to be machined under the same cutting condition, and the consistency of the machined surface of the micro lens array is remarkably improved.

The invention relates to an annular horizontal type double-annular rotary cutting machine, and belongs to the technical field of cutting machines, the annular horizontal type double-annular rotary cutting machine comprises a PLC control box, a base, a machine shell and an object positioning and rotating mechanism installed on the base, and annular rotary cutting devices are symmetrically arranged on the two sides of the object positioning and rotating mechanism; the annular rotary cutting device comprises an X-axis moving module, a Z-axis moving module and an annular rotary cutting mechanism installed on the Z-axis moving module. The annular rotary cutting devices are symmetrically arranged on the two sides of the object positioning and rotating mechanism, the annular rotary cutting devices on the two sides can conduct annular cutting on raw materials up and down, two products can be machined at a time, cutting can be conducted on the same horizontal plane from the two sides of the raw materials at the same time, the cutting time can be shortened by half, and the cutting efficiency is improved. And the production efficiency is greatly improved.

The invention relates to a diamond wire cutting fluid for silicon wafer cutting and a preparation method and application thereof, and the diamond wire cutting fluid comprises the following components by weight: 10-45 parts of a composite additive; 2-6 parts of a functional agent; 10 to 30 parts of a solvent; 0.1-1 part of an auxiliary agent; and 30-50 parts of ultrapure water. The composite additive is used, fatty alcohol-polyoxyethylene ether sulfate has excellent wettability and permeability, after fatty alcohol-polyoxyethylene ether sulfate and N-acyl substituted iminodiacetate are used together, closer interface arrangement can be formed, the dynamic surface tension is reduced more quickly, the wetting process is accelerated, and the wetting and infiltration capacities are improved; the stability of the cutting fluid is kept.

The invention discloses a crystal cutting positioning system and method based on three-laser orthogonal distance measurement and tangent calculation, and belongs to the field of precision machining of semiconductor crystal materials. The main structure of the system is as follows: three orthogonally arranged laser range finders are arranged on an objective table facing a crystal; a posture adjusting device is arranged below the objective table and used for adjusting the yaw angle and the pitch angle of the crystal. And the data processing module is used for receiving distance signals of the three laser range finders and calculating a yaw angle and a pitch angle of the crystal according to a tangent function relationship. According to the method, laser ranging micron-order resolution and fixed baseline geometric constraint are utilized, and the deviation of the yaw angle and the pitch angle is accurately quantified in combination with tangent function solution, so that coupling deviation decoupling is realized. And non-contact laser measurement is adopted, so that hard and brittle crystal damage is avoided. Laser sensing, high-speed processing and precise executing mechanisms are integrated, full-automatic rapid calibration is achieved, and the cutting preparation efficiency is improved. A real-time closed-loop control mechanism actively maintains the position and posture of the crystal before machining and / or during machining, dynamic interference is overcome, and the cutting quality stability is ensured.

To provide a novel cutting method by which a workpiece can be cut along a predetermined cutting plane.SOLUTION: A cutting method for cutting a workpiece including a crystal structure having a c axis which is inclined with respect to a perpendicular of a surface and a c face which is vertical to the c axis includes: a holding step of holding the workpiece; and a cutting step of cutting in the workpiece by a tip of an annular cutting edge by rotating a cutting blade comprising the cutting edge, thereby cutting the workpiece along a predetermined cutting plane which is vertical to the surface and inclined with respect to the c face. In the cutting step, the workpiece is cut in by the tip in a state where a force in a direction in which an angle which is formed by the predetermined cutting plane and the tip when the workpiece is cut in by the tip is made close to 0° acts from the workpiece onto the cutting edge.SELECTED DRAWING: Figure 6

The present invention relates to a breaking device (10) for solar cells (SC), comprising a support device (1) defining a support plane (11) for a solar cell (SC) to be broken, and at least one ejector bar (2a-2e) and at least one hold-down bar (3a-3d) with a breaking edge (31). The at least one ejector bar (2a-2e) and the at least one hold-down bar (3a-3d) extend along a transverse direction (T), are spaced apart from each other along a longitudinal direction (L) and are each coupled to a drive unit (4) by means of which the ejector bar (2a-2e) can be raised beyond the support plane (11) and the hold-down bar (3a-3d) can be lowered in the direction of the support plane (11), so that a solar cell (SC) to be broken can be broken into at least two solar cell strips (SCS1-SCS5) by raising the ejector bar (2a-2e) at the breaking edge (31) of the hold-down bar (3a-3d).Furthermore, a plant (100) for processing solar cells (SC), in particular a plant for manufacturing solar modules, a method for breaking solar cells (SC) and a method for producing a shingled solar cell arrangement are disclosed.

The utility model relates to the technical field of wire cutting, and discloses a diamond wire cutting machine traction system which comprises a base, a diamond wire and a placing frame, the top of the base is fixedly connected with a supporting frame, the two sides of the top end of the supporting frame are rotationally connected with a wire inlet wheel and a wire outlet wheel respectively, and an encoder is arranged on one side of the wire outlet wheel. A first tension adjusting assembly and a second tension adjusting assembly are arranged on the two sides of one end of the supporting frame correspondingly, the first tension adjusting assembly and the second tension adjusting assembly each comprise a fixing support, and one side of each fixing support is rotationally connected with a first tension wheel and a fixed wheel. A traditional traction servo motor is omitted, a high-precision encoder is additionally arranged on a wire outlet wheel and serves as a constant-speed wheel to control stable operation of a whole wire net, a traction shaft cannot form a slipping effect in the whole operation process of equipment, and therefore the service life of the traction shaft is greatly prolonged, and the occupied area is reduced.

The invention relates to a method for separating a plurality of semiconductor material wafers from workpieces during a number of wafer separation operations for an associated workpiece separation process per workpiece by means of a wire saw comprising a wire gate of moving wire sections of a saw wire stretched between two wire guide rollers, wherein each of the wire guide rollers is mounted between a fixed bearing and a floating bearing, comprising the step of carrying out the wafer separation operations of the current workpiece separation process on the current workpiece by temperature-controlling the fixed bearing of the respective wire guide roller during the current workpiece separation process according to a previously determined WGTC temperature curve within the method, which was determined on the basis of a weighted determination of historical data from past workpiece separation processes.wherein, in each of the disc cutting operations, sawing is carried out in a cutting area of ​​the workpiece at a substantially constant cutting speed within the range of 2000 µm / min to 3000 µm / min. The invention further relates to a disc made of semiconductor material, which is produced in particular by the sawing method according to the invention, wherein the disc has a TTV value in the range of 6.0 µm to 58.5 µm, preferably in the range of 10.8 µm to 30.5 µm, and more preferably in the range of 12.9 µm to 25.6 µm.

The utility model discloses a zirconia porcelain block cutting machine clamp, including: handle, clamping subassembly, locating piece and mounting subassembly, the clamping subassembly is provided on one side of handle, the clamping subassembly is used for fixing zirconia porcelain block position, locating piece is fixedly connected to the bottom of handle, mounting subassembly is provided at the bottom of locating piece, and the mounting subassembly is used for mounting zirconia porcelain block. The mounting assembly is used for fixing the position of the positioning block; the clamping assembly comprises a fixing ring, a clamping block and a driving piece, the fixing ring is fixedly connected to one end of the handle, and the clamping block is connected into the fixing ring in a penetrating mode. Through the design of the handle, the clamping assembly, the positioning block and the mounting assembly, the positioning block is fixed on the zirconium oxide porcelain block wire cutting machine through the mounting assembly during use, and the positions of the handle and the clamping assembly are fixed through the positioning block; in the using process, a zirconium oxide ceramic block needing to be cut is clamped and fixed through the clamping assembly, so that the thickness of a cut slice is uniform.

The present application provides an ejector, a processing device, and a cleaning device, which can suppress a decrease in suction force in a case where liquid intrudes into the inside of the ejector and inexpensively perform processing or cleaning of an object to be processed. The ejector generates a suction force, the ejector having: an inflow pipe having a plurality of openings formed at a front end thereof from which a drive fluid is ejected; an outflow pipe having a receiving port that receives the drive fluid ejected from the openings at a position opposite to the front end of the inflow pipe; and a main body portion that surrounds around the openings and the receiving port, having a suction passage that suctions an external fluid to the inside.

The application provides a kind of milling device and method for optical crystal, it is related to milling technical field, including rack, the outside of the rack is provided with positioning mechanism, the positioning mechanism includes mounting bracket and connecting plate, the lower surface of the mounting bracket is rotatably connected with rotating ring by bearing, the rotating ring is fixedly connected with connecting plate, the outer surface of the rotating ring is fixedly connected with incomplete gear ring, the outer surface of the mounting bracket is rotatably connected with multiple support rods by bearing, the positioning cylinder is synchronized and combined, only single wheel is opened and closed in whole process, the rest positioning wheel always keeps clamping state.This section cooperates to realize the accurate coaxial positioning of crystal, double fixing structure prevents loosening, single wheel is opened and closed bit by bit, which avoids interference of milling cutter, does not affect milling operation, ensures continuous clamping of non-milling area, completely prevents crystal deviation, simultaneously adapts to positioning needs of optical crystal of different sizes, positioning process does not need manual adjustment, and stability is strong and adaptability is wide.