7174results about "Fine working devices" patented technology

Methods, devices, and systems for ultrashort pulse laser processing of optically transparent materials are disclosed, with example applications in scribing, marking, welding, and joining. For example, ultrashort laser pulses create scribe features with one pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with correctly aligned illumination. Reflective marks may also be formed with control of laser parameters. A transparent material other than glass may be utilized. A method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. In some embodiments of transparent material processing, a multifocus beam generator simultaneously forms multiple beam waists spaced depthwise relative to the transparent material, thereby increasing processing speed.

An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate.

A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.

A cutting tool has a centrally located tungsten carbide insert brazed into a seat at the forward end of the tool. The seat has a circular mouth and rearward of the mouth is a frustoconical inner wall. At the bottom of the seat is a transverse surface. A tungsten carbide insert is brazed into the seat and the base of the insert is complementary in shape to the seat. A second annular insert may also be brazed into a complementary shaped annular seat that surrounds the centrally located seat.

Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. This enables clean breaking of transparent materials at a higher speed than conventional techniques. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials. The laser is focused near the interface of the materials, generating a high energy fluence at the region to be welded. This minimizes damage to the rest of the material and enables fine weld lines.

A method of dividing a semiconductor wafer comprising:a bonding film adhering step of adhering a bonding film for die bonding to the back surface of the semiconductor wafer;a protective adhesive tape affixing step of affixing an extensible protective adhesive tape to the bonding film side of the semiconductor wafer having the bonding film on the back surface;a dividing step of dividing the semiconductor wafer affixed to the protective adhesive tape into individual semiconductor chips by applying a laser beam along the streets;a bonding film breaking step of breaking the bonding film for every semiconductor chip by extending the protective adhesive tape so as to give tensile force to the bonding film; anda semiconductor chip removing step of removing the semiconductor chips having the broken bonding film from the protective adhesive tape.

Methods relating to the singulation of dice from semiconductor wafers. Trenches or channels are formed in the bottom surface of a semiconductor wafer, corresponding in location to the wafer streets. The trenches may be formed by etching or through an initial laser cut. The wafer is then singulated along the streets with a laser preferably having a beam narrower than the trenches. Multiple, laterally spaced lasers may be used in combination during a single pass to perform simultaneous singulating cuts. Additional edge protection for integrated circuitry on the active surface of the semiconductor dice may be provided by forming trenches or channels along the streets in the active surface instead of the bottom surface, disposing protective material along the streets and within the trenches prior to singulation and cutting through the wafer, leaving protective material on the sidewalls of the channels.

A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

An object to be processed can be cut highly accurately along a line to cut.An object to be processed 1 is irradiated with laser light while locating a converging point within a silicon wafer 11, and the converging point is relatively moved along a line to cut 5, so as to form modified regions M1, M2 positioned within the object 1 along the line to cut 5, and then a modified region M3 positioned between the modified regions M1, M2 within the object 1.

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.