2968results about "Fine working devices" patented technology

The invention provides a laser positioning method for improving gemstone cutting precision, and belongs to the technical field of gemstone cutting laser positioning. A gemstone crystal refractive index tensor model and a ray tracing algorithm are established to simulate a propagation path of light in a gemstone; a thermo-optic effect prediction model is adopted to predict a focus drift distance according to temperature distribution and laser power data and calculate wavefront predistortion phase distribution for compensation, and a zero-vibration input shaping filter is designed for a galvanometer scanning system to suppress residual vibration. A composite control strategy that feedforward control compensates inertia lag and feedback control corrects position errors is adopted to drive a galvanometer, the inherent frequency of a system is recognized through spectral analysis, and the scanning frequency is adjusted to avoid resonance. The technical problem that in the long-time machining process, due to the thermo-optic effect and vibration of a galvanometer scanning system, the laser focus point position generates accumulated drifting, and the cutting precision is reduced is solved.

The embodiment of the invention provides a dicing saw cutting pressure control method and device based on dynamic pressure prediction and a dicing saw. The method comprises the steps that S1, real-time material characteristic parameters on a cutting path are obtained through a multi-source sensor; s2, based on the material characteristic parameters, a dynamic mapping model of material characteristics and cutting pressure is established, and output parameters are predicted pressure compensation values; s3, before a cutting tool reaches a pressure sudden change area, cutting pressure is adjusted in advance according to a predicted pressure compensation value output by the dynamic mapping model, meanwhile, an actual pressure value is detected in real time through a force sensor, and pressure deviation is corrected in combination with a control algorithm; and S4, carrying out staged pressure loading on the non-uniform doping region in the heterogeneous material. According to the method, the pressure sudden change point is predicted through the dynamic mapping model, the pressure is adjusted in advance in combination with a control algorithm, and the characteristics of the adaptive heterogeneous material are loaded in stages, so that the shear mark uniformity is remarkably improved, and the material damage risk is reduced.

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has an elliptical cross-section with a major axis and a minor axis. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

The invention provides a cutting height adjusting method and device of a cutting knife, wafer processing equipment and a medium, and relates to the technical field of wafer processing equipment.The method comprises the steps that the surface height difference between a sample silicon wafer on an auxiliary workbench and a to-be-processed wafer on a main working disc is measured; after the cutting knife cuts the sample silicon wafer to form a cutting mark, calculating a cutting depth value corresponding to the cutting mark; calculating the surface height information of the sample silicon wafer according to the cutting depth value of the cutting mark and the height information corresponding to the lowest point of the cutting knife when the cutting knife cuts the sample silicon wafer on the auxiliary workbench; and according to a preset cutting depth value, the surface height information of the sample silicon wafer and the surface height difference between the sample silicon wafer on the auxiliary workbench and the to-be-processed wafer, target cutting height information of the cutting knife when the cutting knife cuts the to-be-processed wafer is determined. After the height of the cutting knife is adjusted according to the target cutting height information, the cutting mark cut by the cutting knife has high-precision cutting depth.

The invention relates to the technical field of wafers, in particular to a wafer fixing device for a cutting machine, which comprises a rotary table and a wafer carrier, a first airway is arranged in the center of the turntable; a pore plate is arranged at the top of the rotary table; an air chamber communicated with the first air passage is formed between the pore plate and the rotary table; a plurality of second air channels are formed in the rotary table in the circumferential direction; a control valve for communicating the first air passage with each second air passage is arranged between the first air passage and the plurality of second air passages; the turntable is provided with a supporting table; the wafer carrier comprises a tightening ring arranged on the supporting table and a UV adhesive tape film arranged on the tightening ring; the UV adhesive tape film is provided with a plurality of air cavities communicating with the second air channels in a one-to-one correspondence mode in the circumferential direction. In this way, the centrifugal cleaning force is enhanced, cleaning dead corners are reduced, cutting chippings are easier to clean, the cleaning effect is better, and the cleaning efficiency and the product yield are improved.

The present invention provides a positioning mechanism for a crystal bar fixed-angle bonding machine, belonging to the technical field of semiconductor equipment. It solves the problem of low bonding accuracy of existing crystal bar fixed-angle bonding machines. The positioning mechanism of this crystal bar fixed-angle bonding machine includes a fixture for horizontally positioning a material plate and a correction reference vertical plate vertically arranged above the fixture and capable of rotating relative to the fixture. A positioning frame is connected to the correction reference vertical plate and can slide in a direction perpendicular to the plate surface of the correction reference vertical plate. A flexible suction cup capable of adsorbing the crystal bar is connected to the positioning frame. When the flexible suction cup adsorbs the crystal bar, the positioning frame can retract and make the crystal bar press against the correction reference vertical plate. A pressing block is also provided on the correction reference vertical plate. When the flexible suction cup adsorbs the crystal bar and the crystal bar presses against the correction reference vertical plate, the pressing block can descend and press the crystal bar tightly on the material plate. The bonding accuracy of this crystal bar fixed-angle bonding machine is higher.

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has an octagon-shaped cross-section. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

The invention relates to the technical field of wafer cutting, in particular to a high-stability wafer bearing platform for a wafer cutting machine, which comprises a first base, a lifting power part and a bearing table, the first base is provided with an accommodating groove; the lifting power piece is arranged in the accommodating groove; the bearing table comprises a driving ring and an objective table; the driving ring is rotationally arranged at the top of the first base; a plurality of driving tables are arranged at the edge position of the driving ring in the circumferential direction; a central shaft is arranged on the bottom surface of the objective table; the central shaft downwards penetrates through the driving ring, then extends into the accommodating groove and is connected with the output end of the lifting power piece; the central shaft is matched with the molded surface of the driving ring; a plurality of clamping assemblies in one-to-one correspondence with the driving tables are arranged at the edge position of the objective table in the circumferential direction; the clamping assembly can press a wafer placed on the top face of the objective table downwards and limit the wafer in the radial direction under the action of the driving table. According to the invention, the stability and reliability during wafer cutting or movement are improved.

The invention relates to the field of tungsten carbide hard and brittle material processing, in particular to a tungsten carbide hard and brittle material processing method. The technical problems that in the prior art, a tungsten carbide hard and brittle material machining method is low in machining efficiency, poor in surface quality and fast in tool abrasion, and meanwhile, an existing method often lacks the real-time monitoring and dynamic adjusting capacity, and the machining precision and efficiency are affected are solved. According to the technical scheme, according to the tungsten carbide hard and brittle material machining method, the cutter abrasion condition is monitored in real time, and the cutter compensation amount and machining parameters are dynamically adjusted according to the cutter abrasion condition; by monitoring tool wear in real time and dynamically adjusting the compensation amount, machining errors caused by tool wear are reduced, the machining precision is improved, machining parameters are adjusted in real time according to the tool wear condition, it is ensured that the machining process is always kept in the optimal state, the machining efficiency is improved, and by monitoring tool wear and adopting compensation measures, the machining precision is improved. The cutter is prevented from being scrapped in advance due to excessive abrasion, so that the service life of the cutter is prolonged and the machining cost is reduced.

The invention belongs to the technical field of monocrystalline silicon wafer processing, and provides a cutting processing and processing method for reducing the surface roughness of a monocrystalline silicon wafer, which comprises the following steps of: bonding and curing; preparing a cutting cooling liquid; arranging a wire net; setting cutting parameters; carrying out post-treatment; and laser repairing. Compared with a silicon wafer processed by a traditional electroplating diamond wire technology, the number of line marks of the monocrystalline silicon wafer obtained through processing is obviously reduced by adjusting cutting parameters and prolonging a bidirectional reciprocating cutting reversing period, and the number of the line marks on the surface of the monocrystalline silicon wafer can be controlled within three; according to the cutting processing method, by reducing the machine speed, the line mark depth of the monocrystalline silicon wafer can be reduced to be within 5 microns; according to the method, the processed silicon wafer is subjected to laser repairing, industrialization and automation of efficient laser repairing of the silicon wafer are expected to be achieved through the reconstruction mechanism of a monocrystalline silicon lattice structure in the laser irradiation process, line marks on the surface of the repaired silicon wafer can reach within 3 micrometers, and the surface roughness of the silicon wafer is reduced.

A gemstone includes a crown, a pavilion, and a girdle disposed between the crown and the pavilion. The girdle has a pear-shaped cross-section with a rounded end a tapered end narrower than the rounded end. The surface of the gemstone is generally divided into a number of groups of interlocking facets disposed at a variety of angles. The groups of facets comprising the surface of the crown generally include star facets, upper intermediate crown facets, lower intermediate crown facets, main crown facets, and upper girdle facets. The upper girdle facets generally abut an upper edge of the girdle. The groups of facets comprising the surface of the pavilion include culet-adjacent facets, candle facets, main pavilion facets, and lower girdle facets. The lower girdle facets generally abut a lower edge of the girdle.

The invention discloses a cutting fluid drainage nozzle of a high-measurement slicing machine, which belongs to the technical field of cutting processing equipment and comprises a base, a drainage panel, an adjustable composite damping support module, a piezoelectric adjusting strip, a microcirculation flow channel network, a vibration sensing system and a control system. Comprising a high-molecular polymer damping material layer and a high-strength light alloy restraint layer, a piezoelectric ceramic actuator is embedded, passive damping energy absorption and active vibration counteracting are achieved, a piezoelectric adjusting strip is fixed in a drainage groove, and the dual functions of local vibration suppression and flow control are achieved; vibration sensing monitors the vibration state in real time through a plurality of piezoelectric acceleration sensors, the control system achieves working condition self-adaption and frequency division cooperative control through a neural network algorithm, cooperative work is achieved through multiple vibration reduction mechanisms, the vibration suppression effect is improved, the line breakage rate is reduced, meanwhile, the functions of fault diagnosis and predictive maintenance are achieved, and the reliability of the system is improved. And the cutting precision and efficiency and the equipment intelligence level are improved.

The utility model discloses a chip frame removing structure. The chip frame removing structure comprises an X-axis module, an auxiliary sliding rail parallel to the X-axis module, a Y-axis module erected between the X-axis module and the auxiliary sliding rail, a Z-axis module vertically arranged on the Y-axis module, and a frame removing unit arranged on the Z-axis module. According to the chip frame removing structure provided by the invention, mechanical equipment is effectively utilized to replace manual work, so that the consumption of human resources is greatly reduced, the chip frame removing efficiency and effect are effectively improved, and the development and progress of enterprises and industries are well promoted.

A silicon rod manufacturing method, comprising: S1, cutting a round rod (100) in a first direction to obtain a first rough square rod (1) and a plurality of offcut blocks (2), the first direction being the axial direction of the round rod (100); S2, cutting each of the offcut blocks (2) in the first direction to obtain second rough square rods (21); S3, grinding the second rough square rods (21), and bonding and stacking the plurality of ground second rough square rods (21) in a second direction to obtain a second square rod (3), the second direction being orthogonal to the first direction; and S4, cutting the second square rod (3) in the second direction to obtain a plurality of second silicon rods (31). The method saves raw materials, and increases the utilization rate of the round rod (100), thereby improving the production efficiency of finished square rods, and reducing the production cost. The present invention also relates to a silicon rod and a photovoltaic silicon wafer.

The invention relates to the technical field of wafer processing and production, in particular to a process parameter determination method and system applied to ultrathin wafer scribing glue thread improvement, and the method comprises the steps: carrying out the characteristic analysis of an ultrathin wafer to be subjected to scribing operation, and obtaining the characteristic data of the wafer; inputting the wafer characteristic data into a wafer scribing analysis model to obtain at least two scribing stages; aiming at each scribing stage, taking the corresponding target demand and the wafer characteristic data as mapping conditions, and screening in a pre-established scribing tool library to obtain an optimal tool corresponding to the scribing stage; and considering the interaction between the cutter parameter corresponding to the optimal cutter and the wafer characteristic data, and determining the optimal scribing process parameter corresponding to the scribing stage. Heat accumulation in the cutting process is reduced, rubber silk residues are reduced, and the product yield is increased.

The invention provides a universal cutting assembly for a fretsaw and a wire saw and a fretsaw machine using the universal cutting assembly. The universal cutting assembly comprises a cutting assembly body, a mounting frame, a lifting frame and a lifting device. The cutting frame is arranged at the upper end of the bottom frame, the lifting frame is arranged under the cutting frame through a lifting device and can be close to the cutting frame through the lifting device, and the cutting assembly comprises the cutting frame, a fixed roller frame, a movable roller frame, a take-up and pay-off assembly, a sliding assembly and a driving assembly. The fixed roller frame and the movable roller frame are correspondingly arranged on the cutting frame, the driving assembly and the sliding assembly are matched to control the movable roller frame to move in the horizontal axial direction of the movable roller frame, and the roller drums are correspondingly arranged on the fixed roller frame and the movable roller frame through quick release devices. By means of the roller drum capable of being rapidly detached and replaced, the drum of the fret saw and the drum of the rope saw are rapidly switched, so that the same equipment can be flexibly switched to use the fret saw or the rope saw, and the equipment purchase and maintenance cost is reduced.

The invention relates to the technical field of automatic control, in particular to a wafer cutting machine control method, electronic equipment and a storage medium. The wafer cutting machine control method is applied to control of the wafer cutting machine, the wafer cutting machine comprises a cutting tool, and tool setting information matched with the cutting tool, target sample parameters matched with a target sample and cutting control parameters need to be obtained firstly; operation pre-calibration operation is executed on the wafer cutting machine, so that the wafer cutting machine is adjusted to be in a pre-operation state; based on the tool setting information, the target sample parameters and the cutting control parameters, cutting operation setting parameters are determined for the wafer cutting machine; according to the technical scheme, the wafer cutting machine is adjusted from the pre-working state to the working state, cutting operation is carried out on the target sample according to the cutting operation setting parameters, the target wafer is obtained, the problems of low efficiency caused by human factors and damage to equipment and the sample caused by abnormal parameter setting are solved, and higher automation degree and reliability are brought.

The invention provides a precise air floating main shaft based on small hole throttling. The precise air floating main shaft comprises a cylinder barrel, a shell, a rotating shaft, a front radial air floating bearing, a rear radial air floating bearing, a front axial thrust air floating bearing, a rear axial thrust air floating bearing, a driving motor, a broach mechanism and various sensors. A reciprocating type spiral groove is formed in the outer circle of the cylinder barrel and forms a spiral cooling water channel with the shell, and the rear end cover is integrated with an air inlet interface, an air outlet interface, a cooling water interface and an air control interface; compressed gas is throttled through an axial gas path and a small hole to form a high-rigidity gas film to support the rotating shaft, and cooling water flows in the spiral water path to take away heat; the control module is based on rotating speed, displacement, temperature and pressure signals, adopts a thermal-mechanical coupling model and a predictive control algorithm, adaptively adjusts air supply pressure and cooling water flow, and is suitable for semiconductors and ultra-precision machining equipment. Through the collaborative design of the small hole throttling air bearing, the reciprocating type spiral cooling water channel and multi-sensor intelligent control, the rigidity, the heat stability and the operation reliability of the main shaft are greatly improved, and the high-precision ultra-precision machining device is suitable for long-term high-rotating-speed and high-precision ultra-precision machining.

The invention provides a processing device and a processing method, which can measure the surface position of a workpiece with high precision and process the workpiece with high precision when laser processing is carried out on the workpiece with a coating film. A processing device according to one embodiment of the present invention irradiates a workpiece having a coating film with a processing laser beam from the coating film side, and is provided with: a processing laser beam irradiation unit for irradiating the processing laser beam; a coaxial measuring unit for irradiating a measuring laser beam having the same optical axis as the optical axis of the processing laser beam, and measuring the surface position of the workpiece on the basis of reflected light of the measuring laser beam; and a pre-measurement unit for measuring the position of the interface of the coating film before the coating film is irradiated with the processing laser light, and the processing apparatus corrects the focus position of the measurement laser light irradiated by the coaxial measurement unit on the basis of the position of the interface of the coating film measured by the pre-measurement unit.

The invention relates to the technical field of precision machining control, and discloses an intelligent control method for a cutting path of a scribing machine, which comprises the following steps: acquiring a load current signal of a main shaft servo motor in real time and storing the load current signal into a sliding window data queue; performing weighted differential calculation to obtain a real-time load change rate representing a load trend, and calculating an average absolute deviation to obtain an oscillation state quantity representing load dispersion; querying based on a preset nonlinear gain scheduling relationship to obtain a first speed regulation coefficient and an oscillation suppression coefficient; according to the method, an orthogonal dual-channel feed-forward control mechanism is constructed in the same data window, and multiplication cooperation of weighted differential and dispersion statistics is utilized, so that a feed speed set value is corrected in real time; the problems of phase lag and response mismatch of conventional feedback control in the case of transient impact and microcosmic oscillation of hard and brittle materials are solved.

The invention discloses a cutting and polishing combined machining treatment method suitable for polycrystalline silicon. The method comprises the following steps: step 1, silicon ingot pretreatment: loading historical process data of a silicon ingot in combination with a block chain technology, generating a machining parameter packet, and issuing the machining parameter packet to cutting and polishing equipment to form a machining quantization instruction set; a plasma channel is formed through combination of femtosecond laser focusing and high-frequency electromagnetic field constraint for cutting, annular laser is synchronously used for deep micro-area fusion polishing, and the surface roughness of the cut silicon wafer is reduced by means of argon protection and the surface tension self-leveling effect; 3, polishing: immersing the anode of the silicon wafer into TEMPO / [EMIM] [BF] electrolyte, and regulating and controlling by using pulse voltage; 4, cleaning and drying, wherein megasonic assisted nanobubble ultrapure water is adopted for flushing, and Malangori drying is carried out; and 5, quality control: verifying the surface appearance and the subsurface defect density, and carrying out secondary processing flow on the abnormal silicon wafer.

The invention relates to the technical field of wafer cutting machines, in particular to a large-stroke wafer cutting machine suitable for large-size wafer cutting, which comprises a base and a stand column arranged on the base, a placing assembly is movably arranged on the base; the stand column is movably provided with a movable base. A lifting seat is movably arranged on the moving seat; a cutter assembly is rotationally arranged at the bottom of the lifting base. A driving plate is movably arranged on the lifting seat; the driving plate is provided with a trigger pin in a floating manner; the lifting seat is provided with a reset plate at the top of the driving plate; a reset spring is arranged between the reset plate and the driving plate; the movable seat is provided with an ejector rod; a driving barrel is rotationally arranged on the lifting seat; a driving groove is formed in the outer wall of the driving barrel. Through one-time up-and-down circulating action of the lifting base, reversing of the cutter assembly can be achieved; after the cutter assembly is reversed, the placing assembly drives the wafer to move reversely, and the cutter assembly can continue to cut the next cutting channel of the wafer in a reverse cutting mode without returning to the initial side in an idle stroke, so that the cutting efficiency is improved.

The invention provides a plate-adhesive-free crystal bonding method for silicon wafer cutting and application, and relates to the technical field of solar cells. Specifically, the method comprises the following steps: preparing a steel crystal support and a plastic plate; wherein a plurality of groove structures are arranged on the single-side surface of the steel crystal support, and a plurality of tooth structures matched with the groove structures are arranged on the single-side surface of the plastic plate; the steel crystal support and the plastic plate are assembled, so that the groove structure and the tooth structure are connected in an embedded mode; and ultrasonic welding is conducted at the embedded position, the groove structure is completely filled with the molten tooth structure, and the steel crystal support-plastic plate composite part without plate glue is obtained. The invention provides a novel process method which does not contain an adhesive component aiming at a crystal bonding process before cutting a silicon wafer in a solar cell, can effectively solve the problems of adhesive during bonding, adhesive residue after cutting, environmental pollution, harm to human bodies and the like caused by a traditional adhesive, and has a good application prospect.

The embodiment of the invention provides a silicon wafer lifting method and a silicon wafer, and the method comprises the steps: completely cutting a crystal bar into silicon wafers through a cutting line, and controlling the silicon wafers to move upwards; and in the process of controlling the silicon wafer to move upwards, controlling the cutting line to alternately and circularly move in the positive and negative directions. According to the silicon wafer lifting method provided by the embodiment of the invention, the contact area of the silicon wafer clamping the cutting line is smaller by utilizing the characteristic that the wire bow of the forward and reverse routing is smaller than that of the one-way routing, so that the probability that the cutting line forms scratches on the surface of the silicon wafer in the lifting process can be reduced, the condition of wafer falling during lifting can be reduced, and the lifting efficiency of the silicon wafer is improved. The method has the advantages of fast speed increase, high surface quality of the prepared silicon wafer and small secondary damage.

The invention discloses a silicon material processing method and a silicon wafer, and belongs to the technical field of silicon wafer manufacturing, and the silicon material processing method comprises the steps: controlling the silicon wafer to move at a feeding speed relative to a cutting line in a feeding direction until the silicon wafer is separated from the cutting line; the moving process of the silicon wafer comprises a deceleration stage; wherein the feeding speed in the speed reduction stage is reduced from the first feeding speed to the second feeding speed. The feeding speed is reduced at the tail end of the moving process of the silicon wafers, so that the possibility that the silicon wafers are damaged when the cutting line passes through the narrow gap between the adjacent silicon wafers is reduced, and the yield of the moving process of the silicon wafers is improved. And meanwhile, the first feeding speed is higher than the second feeding speed, namely, the feeding speed can quickly pass through the gap at the wider gap between the adjacent silicon wafers, so that the silicon material treatment efficiency is improved, and the material lifting time is shortened.

A 12-inch semiconductor silicon wafer processing method based on stepped diamond wire cutting relates to the technical field of semiconductor silicon wafer manufacturing, and comprises the following steps: firstly, using a diamond wire with the diameter of 180-220 [mu] m, applying tension of 30-50 N, and cutting an initial groove on a semiconductor silicon rod; then, replacing a diamond wire with a diamond wire with the diameter of 30-60 microns, reducing the tension to 5-12N, cutting the semiconductor silicon rod along the depth direction of the initial groove to obtain a silicon wafer blank, and finally, removing the part, corresponding to the initial groove, of the edge of the silicon wafer blank to obtain the semiconductor silicon wafer. The problem that in the initial stage of diamond wire cutting, a feeding diamond wire is not stable and not prone to feeding can be solved, meanwhile, the warping rate of a silicon wafer is reduced, and the surface quality and cutting precision of the silicon wafer are improved.

A laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure. As non-limiting examples, various aspects of this disclosure provide laser-splittable semiconductor wafers, laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure, where the laser-splittable structure comprises a first layer characterized by a first laser ablation threshold, and a second layer characterized by a second laser ablation threshold that is less than the first laser ablation threshold.

The utility model discloses a device for measuring an oblique line net by a photovoltaic slice, which comprises a right-angle ruler (1) matched with a roller way (3), the right-angle ruler (1) comprises a horizontal plate (11) and a vertical plate (12) which are perpendicular to each other, the horizontal plate (11) is provided with a pair of mutually parallel sliding chutes (11a), one end of each sliding chute (11a) is provided with an opening (11b), each sliding chute (11a) is internally connected with a coaxial telescopic measuring ruler (2), and the telescopic measuring rulers (2) are arranged on the roller way (3). The telescopic measuring scale (2) extends out of the sliding groove (11a) from the opening (11b) along the axis, the lower surface of the horizontal plate (11) is attached to the upper surfaces of the two roller ways (3), the inner surface of the vertical plate (12) is attached to the side faces of the roller ways (3), and the end of the telescopic measuring scale (2) abuts against the connecting positions (5) of the roller ways (3) and the bearing seats (4). The utility model has the advantages that the measuring deviation is effectively reduced, the measuring accuracy is improved, the silicon wafer quality is improved, and the working efficiency and the working quality are improved.

The utility model provides an automatic winding device and a multi-wire cutting machine, and belongs to the technical field of multi-wire cutting machines, the automatic winding device comprises a rolling ring subassembly and a control mechanism, the rolling ring subassembly comprises a fixing part, a rolling ring body and a wire guide part; the fixing part is fixedly arranged on the main frame; the rolling ring body is arranged around the plurality of grooved wheels, has a degree of freedom of rotating around the plurality of grooved wheels, and is rotationally connected with the fixed part; the wire guide part is arranged on the rolling ring body and has the degree of freedom of moving in the axis direction of the grooved wheel; one end of the steel wire is fixedly arranged on the wire component; the switching assembly is in transmission connection with the wire part, and the driving assembly is in transmission connection with the rolling ring body. According to the automatic winding device, the rolling ring body and the wire guiding component are driven to rotate, the steel wire is wound in the wire groove, the wire guiding component is controlled to move by means of the switching assembly, the steel wire is driven to move, then the wire groove where the steel wire is wound is switched, manual operation is omitted, and working efficiency is improved.

The invention relates to the technical field of wafer cutting, in particular to a wafer cutting cutter which comprises a rack, an air cylinder, an adjusting plate, an adjusting assembly, a cutting assembly, a moving assembly and a recycling assembly. The cutting assembly includes: a first mover; the second movers are installed on the two sides of the first mover, and the number of the second movers is two. In the cutting process, the first mover and the second mover work cooperatively according to the preset cutting path, and the cutter is driven to move. In the moving process of the cutter, on one hand, the cutter moves along the guide of the guide rod through the second through hole, and the accuracy of the cutting direction is guaranteed; and on the other hand, due to the fact that the first through hole is rotationally connected with the two-way screw rod, the position of the cutter can be flexibly adjusted according to adjustment of the two-way screw rod so as to meet different cutting requirements. During the period, the water spraying head continuously sprays water flow, and the low-temperature and clean state of the cutting area is maintained.