According to a method for cutting a sapphire substrate LED chip through lasers, a paddle with the depth being 20-40 [mu]m is cut in the face, with an electrode, of a wafer through an ultraviolet laserwafer scriber; and modified layers are formed in the mode that an invisible laser wafer scriber is utilized to act on the interior of the wafer, that is, the different modified layers are formed in the mode that the lasers are focused on the positions, with different depths, of the wafer through adjustment of the laser focus depth of the invisible laser wafer scriber, and cracks generated throughstress releasing of the modified layers can be connected together. The sapphire substrate wafer machined through the method is cleaved in the direction of the cracks through a piece cleavage machine,so that the sapphire substrate wafer is cut into independent light emitting units, and thus, cutting is completed. According to the method for cutting the sapphire substrate LED chip through the lasers, the sapphire substrate wafer with the large thickness and size is cut, the cutting yield of the sapphire substrate wafer can be effectively increased, the cut chip is prevented from generating thephenomena of crystal twin, edge breakage and oblique cracking, and the appearance yield rate of the cut chip is effectively increased.