1635results about How to "Avoid chipping" patented technology

A hard multilayer coated tool including: (a) a substrate; and (b) a multilayer coating covering the substrate, the multilayer coating comprising first and second coating layers which are alternately laminated on the substrate, each of the first coating layers having and average thickness of 0.10-0.50 mum and containing titanium therein, each of the second coating layers having and average thickness of 0.10-0.50 mum and containing aluminum therein, the multilayer coating having and average thickness of 0.50-10.0 mum.

Metformin Hydrochloride (herein referred to as metformin HCl) that may be 98.5%-100% pure is a high dose drug capable of being directly compressed with specific excipients into tablets having desired, hardness, disintegrating ability, and acceptable dissolution characteristics. Metformin HCl is not inherently compressible and thus presents formulation problems. Excipients used in the formulation enhance the flow and compaction properties of the drug and tableting mix. Optimal flow contributes to uniform die fill and weight control. The binder used ensures sufficient cohesive properties that allow metformin HCl to be compressed using the direct compression method. The tablets produced provide an acceptable in-vitro dissolution profile.

A vibration suppressing device and a vibration suppressing method that are capable of obtaining an accurate optimum rotation speed and shortening a time period from generation of chatter vibration to calculation of the optimum rotation speed are provided. The vibration suppressing device 10 includes: vibration sensors 2a to 2c for detecting time-domain vibrational accelerations of a rotary shaft 3 in rotation; and a control device 5 for calculating a chatter frequency and a frequency-domain vibrational acceleration of the rotary shaft 3 at the chatter frequency on the basis of the time-domain vibrational accelerations detected by the vibration sensors 2a to 2c, and when the calculated frequency-domain vibrational acceleration exceeds a predetermined threshold value, calculating an optimum rotation speed on the basis of a predetermined parameter, and rotating the rotary shaft 3 at the calculated optimum rotation speed.

The invention provides a method for preparing a thin film heterostructure. The method comprises the steps of providing a wafer substrate with an injection surface; conducting ion injection from the injection surface on the wafer substrate to form an injection defect layer at the predetermined depth of the wafer substrate; providing a support substrate, and performing temperature rising bonding onthe support substrate and the wafer substrate; annealing a obtained structure to form a continuous defect layer; stripping part of the wafer substrate through external force assisting, and forming wafer film on the wafer substrate to obtain a thin film heterostructure including the support substrate and the wafer film. The method can reduce the thermal strain of a bonding structure through the temperature rising bonding, so that the bonding structure remains stable and complete in the high-temperature process, and avoid the problem of film cracking caused by thermal mismatch in the stripping process, the bonding structure is separated from the continuous defect layer through the external force assisting method, so that no effect is caused on a bonding interface, and an external force assisting stripping method can reduce stripping temperature and stripping time, thereby reducing the cumulative effect of thermal stress in a piezoelectric crystal.

The invention provides a three-axis-system composite spinning device and a spinning method for tow-apt-to-fall staple. The three-axis-system composite spinning method is characterized in that the method comprises the steps of: feeding roving silvers containing the tow-apt-to-fall staple and cotton roving silvers into the back roller of a ring spinning machine, and conducting drafting to form a tow-apt-to-fall staple strand and a cotton strand which stretch straight in parallel; after the tow-apt-to-fall staple strand and the cotton strand are respectively positioned by using a tow-apt-to-fall staple strand positioner and a cotton strand positioner, feeding the tow-apt-to-fall staple strand and the cotton strand into the jaw of a front roller and directly feeding filament adjustable tension pulley into the jaw of the front roller; and after the tow-apt-to-fall staple strand, the cotton strand and the filament are output from the jaw of the front roller, twisting the tow-apt-to-fall staple strand and the filament at a first converging point outside the jaw of the front roller to form a structural section, and twisting the structural section and the cotton strand at a second converging point to form a three-axis-system composite yarn. The device and the method provided by the invention has the advantages that not only can the content of the tow-apt-to-fall staples in the spun composite yarn be improved, but also the situations of fiber damage and tow falling can be effectively avoided.

The invention discloses a silicon carbide wafer bevel grinding, milling and polishing machine and an operation method thereof. The silicon carbide wafer bevel grinding, milling and polishing machine comprises a supporting sheet (1), a rotating shaft (2), a driving motor (3), a motor bracket (4), a vertical rotating arm (5), a horizontal rotating arm (6), a slide frame (7) and a screw rod (9) which are sequentially connected, wherein the lower end of the screw rod (9) is sequentially connected with a first cone gear (12), a second cone gear (13), an adjusting shaft (14) and a rotating wheel (15); a machining tool (19) of a silicon carbide wafer is arranged below the supporting sheet (1). The silicon carbide wafer bevel grinding, milling and polishing machine is reasonable in structural design, convenient to operate and high in working efficiency, bevel grinding, milling and polishing integrated machining can be performed on the silicon carbide wafer, the working efficiency is high, the roughness of a polished bevel can be smaller than 0.1 micron, the machining precision is high, and the applicability is high. The operation method can be applied to the bevel grinding, milling and polishing integrated machining on the silicon carbide wafer which is round or not round.

Hydrogen embrittlement is prevented in Sm₂Co₁₇-based magnets and R₂Fe₁₄B-based magnets by metal plating the magnet, then carrying out heat treatment, or by forming a metal oxide or metal nitride layer on the metal plating layer or directly on the magnet itself.

An end mill is provided having an axis of rotation, a shank section and a fluted section, each extending along the axis of rotation, and a plurality of helical teeth. The fluted section has a first end attached to the shank section and a second end. The plurality of helical teeth is disposed within the fluted section. Each helical tooth has a cutting edge, a relief surface, a cutting surface, and an edge preparation surface. The edge preparation surface is contiguous with the cutting edge of the respective tooth.

A method and a device for breaking a work, a method for scribing and breaking the work, and a scribing device with a breaking function. The method for breaking the work (5) capable of preventing chipping from occurring on the rear surface of the work due to rubbing when the work having a scribe line marked on the surface thereof is broken comprises a work adhering step for stamping the rear surface of the work (5) on an extensible sheet (9), a sheet pulling step for pulling the sheet (9) on which the work (5) is stamped, and a work parting step for moving the scribe line (5c) to the rear surface of the work (5) in the pulled state of the sheet (9). Since the work (5) is pulled off immediately after the work (5) is parted by the tensile force of the sheet (9), the rubbing of the parted work (5) is reduced and the chipping can be prevented from occurring on the rear surface of the work. Also, since the tensile force provided to the work (5) assists in parting the work, the work (5) can be parted with a smaller force.

The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.

A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.

A method of manufacturing a semiconductor light-emitting device which includes the steps of forming a plurality of light-emitting device sections (40), having an approximately rectangular shape in plan view, on a substrate (10) in a matrix shape, forming a first dividing groove (61) between the long sides (41) of the light-emitting device sections (40) so that the long side (41) of the light-emitting device section (40) is along an easily cleaved plane of the substrate (10), forming a second dividing groove (62), having a larger width than the width of the first dividing groove (61), between short sides (42) of the light-emitting device sections (40), and dividing the substrate (10) along a first dividing groove (61) and a second dividing groove (62) to cut out the light-emitting device section (40).

A pixel array substrate includes a substrate, a plurality of pixel units and an organic insulating layer. The substrate is provided with an active zone and a peripheral zone arranged on the periphery of the active zone. The active zone includes a plurality of pixel unit zones and a bending zone arranged on at least one side of the pixel unit zone. Each pixel unit includes an active assembly and a pixel electrode connected with the active assembly electrically. The pixel electrode is arranged in the pixel unit zone correspondingly. The organic insulating layer includes a first organic insulation pattern and a second organic insulation pattern arranged in the pixel unit zone and the bending zone respectively. The thickness of the first organic insulation pattern is greater than that of the second organic insulation patter. The pixel array substrate has comparatively good flexibility.

The invention provides a backlight module with a narrow frame of a liquid crystal display device. The backlight module comprises the frame, a back plate, a connection piece and a rubber frame which is arranged on the back plate; the frame comprises a bottom plate opposite to a front panel; the front panel of the frame concaves inwards to form a first tapping hole with an inner thread; the bottom plate of the back plate is provided with a hole part corresponding to the tapping hole; the rubber frame is provided with a through hole corresponding to the hole part; the connection part passes through the through hole; and both ends are respectively in a fit connection with the first tapping hole on the front panel of the frame and the hole part on the bottom plate of the back plate so that the frame is locked with the back plate. According to the backlight module provided by the invention, space positions of the rubber frame and the back plate are saved; meanwhile, material is avoided be cut by the rubber frame in a large area to avoid convex hulls on the frame and the back plate, therefore, the structure intensity of the rubber frame is ensured, and the frame of the backlight module is easy to narrow.

The invention relates to a heat shock resistance firebrick and the manufacture method. The method is that it adopts mullite, corundum, alpha-Al2O3 powder, andalusite and clay as base material, adding 3-15wt% binding agent. The process includes the following steps: adding binding agent into the base material, grinding to equal, molding, sintering at 1450 degree centigrade. The invention has good heat shock resistance, long useful life, etc. It has great economic and social benefits.

Chipping of semiconductor chips is to be prevented. A semiconductor device comprises a semiconductor chip having a main surface, a plurality of pads formed over the main surface, a rearrangement wiring formed over the main surface to alter an arrangement of the plurality of pads, and a protective film and an insulating film formed over the main surface, and a plurality of solder bumps each connected to the rearrangement wiring and arranged differently from the plurality of pads. The presence of a bevel cut surface obliquely continuous to the main surface and formed on a periphery of the main surface of the semiconductor chip prevents chipping.

A system and a method are disclosed for providing a downhole mechanical energy absorber that protects downhole tools from impact loads and shock loads that occur during run-in contacts, tool drops, perforating blasts, and other impact events. A continuous localized inelastic deformation of a tube is a primary energy absorber in a load limiting design of the downhole mechanical energy absorber.

A ball endmill includes a cylindrical tool body that is to be rotated about its axis, ball-nosed end cutting edges located in an axially distal end portion of the tool body and describing a semi-spherical-shaped locus during rotation of the tool body, and spiral gashes located in the axially distal end portion of the tool body and defining rake faces of the respective ball-nosed end cutting edges. The tool body is made, at least at its part providing each ball-nosed end cutting edge, of a hard sintered body. Each ball-nosed end cutting edge is inclined with respect to the axis by a helix angle in a range from about 10° to about 30°. The tool body has, in its distal end, a non-gashed central area in which the spiral gashes do not exist. A ratio of a size of the non-gashed central area to a ball nose radius is in a range from about 0.03 to about 0.1.

The invention relates to the field of artificial food, and particularly relates to compound rice, namely whole grain compound rice containing embryo. The whole grain compound rice comprises the raw materials of rice and wheat with embryo, wherein the raw material is extruded into granules after being crushed, and prepared into the whole grain compound rice; and a rice milk layer is coated at an outer layer of the whole grain compound rice. The broken rice which is neglected and abandoned by people in the past and other side grain ingredients are taken as raw materials and processed into healthy and delicious whole grain compound rice by a high-tech craft technique. The whole grain compound rice is green and environment-friendly, and the production cost can be reduced; nutritional ingredients of the whole grain compound rice are more abundant and balanced than those of common rice; and the requirements of human health are met.