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214results about How to "Shorten process time" patented technology

Thin film heterostructure preparation method

The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.
Owner:上海新硅聚合半导体有限公司

Pixel structure, display panel and method for manufacturing optoelectronic device

The invention provides methods for manufacturing a pixel structure, a display panel and a photoelectrical device. The method for manufacturing the pixel structure comprises the steps as follows: firstly, a baseplate is provided and is provided with a transistor area, a capacitor area and a pixel area; subsequently, a film transistor and a capacitor electrode are formed on the baseplate, wherein, the capacitor electrode is covered by a dielectric layer; then, a color filter layer is formed on the film transistor and the capacitor electrode, and a protection layer is formed on the color filter layer; patterned photoresist layers with different thicknesses are formed on the protection layer, and partial protection layer and partial patterned photoresist layers are removed sequentially to expose partial source/drain electrode of the film transistor and partial protection layer; then, the protection layer is covered by a conductive layer in a conformal way, and partial patterned photoresist layer is removed to define a pixel electrode. The invention can reduce the manufacturing cost, shorten technical time and increase the productivity, and the capacitance value of the capacitance stored in the pixel structure is improved effectively.
Owner:AU OPTRONICS CORP

Growth method for preparing square sapphire crystal by Kyropoulos process

The invention provides a growth method for preparing a square sapphire crystal by a Kyropoulos process. The sapphire monocrystal growth technique mainly comprises the following steps: crystal seeding, shouldering, isometric growing, end pulling, and cooling and annealing. The square crucible and square heating body must be concentric during furnace loading, the side wall is parallel to the side surface of the square heating body, and the seed crystal is the square seed crystal of which both the end surface and side surface are finely oriented. In the isometric growth step, the cooling rate is increased, and the pull rate is decreased. In the end pulling step, proper heating is performed to bake the edges of the crystal end part, and the pull rate is increased, so that the crystal is automatically separated from the crucible. Cooling is performed at higher rate in the early and later periods of the cooling and annealing step; and in the intermediate period, the cooling is stopped, and the temperature is kept for some time. The growth technique is beneficial to growing the large-size high-grade square sapphire monocrystal. The technique for growing the square sapphire monocrystal has the advantage of high crystal quality, and can greatly enhance the working efficiency and the yield of the square lump material.
Owner:HARBIN AURORA OPTOELECTRONICS TECH

Method for improving surface performance of single-phase high-entropy alloy

The invention discloses a method for improving surface performance of a single-phase high-entropy alloy, and belongs to the technical field of high-entropy alloy surface strengthening. The single-phase high-entropy alloy is an Al<x>CrCoFeMnNi alloy, wherein x represents the mole number, and is equal to 0-0.5; after the single-phase high-entropy alloy is subjected to solution treatment and surfacepretreatment, the surface of the high-entropy alloy is strengthened through ultrasonic impact equipment; and the high-entropy alloy is of a single-phase face-centered cubic structure, a certain depthof plastic deformation layer is formed on the surface of the high-entropy alloy after ultrasonic impact, grains are obviously refined, a gradient structure is formed from the surface to the core, andhardness and abrasion resistance are significantly improved. According to the method, a fine structure and a large number of microscopic defects can be obtained on the surface of the high-entropy alloy while the chemical composition of the surface of the high-entropy alloy is ensured to be unchanged and the toughness of the core is ensured, thus the hardness of the surface of the high-entropy alloy is increased by 1.8-2.5 times, the abrasion resistance is increased by 1.3-2.5 times, the method is simple, easy to operate, safe, reliable, small in energy consumption, economical and practical.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)

Fully-automatic line production cloth sticking machine

The invention relates to a fully-automatic line production cloth sticking machine. The cloth sticking machine is characterized in that: a feeder, a gluing device, a cloth sticking device and a dryer which are connected in sequence to form the cloth sticking machine are respectively connected with a fully-automatic control system; the feeder comprises a frame, an automatic feeding belt mechanism which is arranged under the emptying rack, and a batch emptying rack which is arranged on the frame; the gluing device comprises a frame, and a supporting roller, a rolling turning roller, a glue spreader and an adhesive groove which are respectively placed on the frame; and the cloth sticking device comprises a frame, and a left cloth clamping and cutting device, a right cloth clamping and cutting device and a cloth shearing mechanism which are placed on the frame; and the dryer comprises a frame, and an automatic feeding belt mechanism, an oven heating mechanism and a hot gas cycling mechanism which are respectively placed on the frame. In the invention, each component is coordinated by a program of the control system, a laminated product is obtained through sticking the cloth with glue to a substrate and passing through a pressure roller. The fully-automatic line production cloth sticking machine allows the product quality and the production efficiency to be improved, the production cost to be reduced, and the labor force to be released.
Owner:蒋均利

Manufacturing method of shield gate trench power device

The invention provides a manufacturing method of a shield gate trench power device. The method comprises the following steps of: providing a substrate, forming at least one first trench in a device unit region of the substrate, forming at least one second trench in an electrode connection region of the substrate, and forming first dielectric layers on the side walls and the bottoms of the first trench and the second trench; forming a shielding gate in the first trench, partially filling the first trench with the shielding gate, and filling the second trench with a conductive material; forminga second dielectric layer which fills the first trench and covers the surface of the substrate and the conductive material; removing the second dielectric layer on the device unit region by adopting adry isotropic etching process, and exposing a part of the first trench; forming a gate in the first trench. According to the invention, before the gate is formed, the second dielectric layer on the device unit region is removed through dry isotropic etching, and part of the first trench is exposed, so that compared with the traditional wet etching removal, the process time is shortened, and the undercutting problem is effectively reduced and even avoided.
Owner:GUANGZHOU CANSEMI TECH INC

Carburizing direct quenching process for large-scale wind power gear/gear shaft

The invention relates to a carburizing direct quenching process for a large-scale wind power gear/gear shaft. The process comprises the following steps of: (1) carburizing at the temperature of between 910 and 970 DEG C for 8 to 72 hours, wherein C1 is 0.9 to 1.2 percent C; (2) diffusing at the temperature of between 910 and 970 DEG C for 2 to 8 hours, wherein C2 is 0.65 to 0.9 percent C; (3) keeping temperature at low temperature of between 620 and 700 DEG C for 2 to 8 hours; (4) keeping the temperature at the temperature of between 810 and 850 DEG C for 2 to 8 hours before oil extraction; (5) performing the oil extraction, namely moving workpieces from a carburizing furnace to a quenching furnace for quenching; and (6) tempering in a tempering furnace at the temperature of between 150 and 200 DEG C for 4 to 48 hours. In the carburizing direct quenching process for the large-scale wind power gear/gear shaft, a process of direct tapping and quenching after carburizing is adopted, the intermediate temperature heat-preserving phase after the carburizing is added, the time of the process is reduced by about one third, the cost is reduced by about one half, the length of martensite of the workpieces can be reduced, and the number of residual austenite can be reduced obviously.
Owner:天津市祥威传动设备有限公司

Circuit board structure and making method

The invention provides a kind of circuit board's structure and its preparation method, which includes: to form No.1 and No. 2 dielectric layer on the No. 1 and No. 2 loading plate, then separate one side of the No. 1 and No. 2 circuit layer that are formed on the No. 1 and No. 2 loading plate into one No. 3 dielectric layer and then laminate them, embed the No. 1 circuit layer into the position between the No. 1 dielectric layer and the No. 3 dielectric layer, embed the No. 2 circuit layer into the position between the No. 2 dielectric layer and No. 3 dielectric layer, and to form a No. 3 circuit layer on the outer surface of the No. 1 dielectric layer, form a No. 4 circuit layer on the outer surface of the No. 2 dielectric layer; the circuit board structure of the invention includes: sandwich layer plate, No. 3 circuit layer, No. 4 circuit layer; the circuit board structure of the invention and its preparation method enhances the wiring density for the circuitry of the circuit board, shortens the path for transmitting signal, improves the electric property quality of the circuit board, simplies the working procedures, shortens the time for all working procedures and reduces the cost for all working procedures, lessens the thcickness of circuit board, which meets the development trendancy of micromation.
Owner:PHOENIX PRECISION TECH CORP

Dyeing technology for carrying out one-bath scouring and dyeing on lycra-containing cotton knitted fabric by active turquoise blue

The invention discloses a dyeing technology for carrying out one-bath scouring and dyeing on a lycra-containing cotton knitted fabric by active turquoise blue, mainly aims at solving the problems that a traditional technology is relatively large in water consumption and coal consumption, long in technology duration and high in power consumption. The dyeing technology comprises the working procedures of preshaping, stitching the edge, carrying out one-bath scouring and dyeing, and carrying out aftertreatment and afterfinish in sequence, wherein in the working procedure of the preshaping, a chelating agent, a deoiling agent, tea saponin, a tea saponin dispersion dispersion liquid and a scouring agent are fed; in the working procedure of the one-bath scouring and dyeing, the deoiling agent, a defoaming agent and refined enzyme are fed into a dye vat after being diluted by clear water, a leveling agent, anhydrous sodium sulphate and sodium carbonate are fed into the dye vat in a way of circulating material injection, the active turquoise blue and urea are fed in a way of dissolving the materials by the clear water, and the heat preservation is carried out at the temperature of 80 DEG C. After the dyeing technology is adopted, the lycra-containing cotton knitted fabric can be bleached, dyed and scoured by the working procedure of the one-bath scouring and dyeing, so that a plurality of tasks can be completed in one working procedure, the technological process is shortened, the processing steps are reduced, and the water consumption, the electricity consumption and the coal consumption in the processing steps can be omitted.
Owner:JIHUA 3543 KNITTING CLOTHING

Chip positioning clamp of vacuum eutectic soldering, manufacturing method and chip transferring method

The invention discloses a position clamp of vacuum eutectic soldering, a manufacturing method and a chip transferring method. The positioning clamp comprises a substrate, a supporting step and a limiting step. The substrate is provided with an adsorbing hole. The supporting step is used for supporting a chip. The limiting step is used for limiting the chip. The manufacturing method comprises the steps of: forming the supporting step on the surface of substrate; forming the limiting step on the surface of the supporting step; and manufacturing the adsorbing hole on the center position of the substrate. The chip transferring method comprises the steps that an adsorbing head adsorbs the chip positioning clamp; the adsorbing head adsorbs the chip into the limiting step of the chip positioning clamp through the absorbing hole; the chip is moved to a suitable position in a packaging box; and the adsorbing head is dismounted, and a pressure rod is installed. By adopting the positioning clamp, the manufacturing method and the chip transferring method, the chip transferring process is simplified, the processing time is saved, the position tolerance in the chip transferring process is reduced, and the position precision is improved.
Owner:SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST

Instant spicy fish and method for making same

InactiveCN105105213ASatisfy securityMeet deliciousFood preparationFood safetyFishery
The invention discloses instant spicy fish and a method for making the same. The method includes steps of (1), carrying out preprocessing, to be more specific, removing the fish heads and the internal organs of fish, thoroughly washing the fish by the aid of water, draining the fish and weighing the fish; (2), removing the fishiness of the fish; (3), steaming the fish; (4), primarily drying the fish; (5), frying the fish in oil; (6), seasoning the fish, and to be more specific, soaking fried fish sections in flavoring liquid with chili oil under vacuum conditions; (7), secondarily drying the fish sections; (8), sterilizing the fish sections. The instant spicy fish and the method have the advantages that a vacuum soaking process is combined with the method in the aspect of fishiness removing and seasoning operation, accordingly, the fishiness of the fish can be quickly removed, the fish can be quickly seasoned, and the technological duration can be shortened; ultrahigh-pressure sterilization techniques are implemented in the aspect of product sterilization, and accordingly flavor, textures and the nutritional quality of products can be effectively kept; the instant spicy fish is crispy, tasty, sweet, sour and pungent without loss of aroma of the fish, is easily accepted by testers and can be eaten conveniently and safely, and requirements of consumers on the safety, the deliciousness and the convenience of modern food can be met.
Owner:TIANJIN AGRICULTURE COLLEGE

Frame sealing glue coating device

The invention discloses a frame sealing glue coating device for shortening the process time of coating frame sealing glue, improving the coating efficiency and improving the thickness uniformity of coating the frame sealing glue. The frame sealing glue coating device comprises a storage cavity, a nozzle, a connecting guide pipe and a power driving component, wherein the nozzle comprises a nozzle cavity and a nozzle opening; the nozzle opening is positioned below the nozzle cavity and is matched with the shape of a frame sealing glue coating zone of a baseplate; the connecting guide pipe is used for communicating a storage cavity and the nozzle cavity; the power driving component is used for squeezing frame sealing glue in the storage cavity to the nozzle cavity through the connecting guide pipe and is squeezed out through the nozzle opening. When the power driving component drives the frame sealing glue to be squeezed out from the nozzle opening, the frame sealing glue can be integrally coated to the frame sealing glue coating zone of the baseplate, so that the process time of coating the frame sealing glue is greatly shortened and the coating efficiency is improved by the adoption of the solution. Furthermore, owing to integrated coating of the frame sealing glue, a coating start end and a coating stop end are cancelled, so that coating overlap can be avoided, and thus the thickness uniformity of coating the frame sealing glue is improved.
Owner:HEFEI BOE OPTOELECTRONICS TECH +1
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