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92results about How to "Shorten process time" patented technology

Thin film heterostructure preparation method

ActiveCN108493334ALow annealing temperatureShorten process timePiezoelectric/electrostrictive/magnetostrictive devicesOptoelectronicsHigh-temperature corrosion
The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.
Owner:上海新硅聚合半导体有限公司

Pixel structure, display panel and method for manufacturing optoelectronic device

The invention provides methods for manufacturing a pixel structure, a display panel and a photoelectrical device. The method for manufacturing the pixel structure comprises the steps as follows: firstly, a baseplate is provided and is provided with a transistor area, a capacitor area and a pixel area; subsequently, a film transistor and a capacitor electrode are formed on the baseplate, wherein, the capacitor electrode is covered by a dielectric layer; then, a color filter layer is formed on the film transistor and the capacitor electrode, and a protection layer is formed on the color filter layer; patterned photoresist layers with different thicknesses are formed on the protection layer, and partial protection layer and partial patterned photoresist layers are removed sequentially to expose partial source/drain electrode of the film transistor and partial protection layer; then, the protection layer is covered by a conductive layer in a conformal way, and partial patterned photoresist layer is removed to define a pixel electrode. The invention can reduce the manufacturing cost, shorten technical time and increase the productivity, and the capacitance value of the capacitance stored in the pixel structure is improved effectively.
Owner:AU OPTRONICS CORP

Method for improving surface performance of single-phase high-entropy alloy

The invention discloses a method for improving surface performance of a single-phase high-entropy alloy, and belongs to the technical field of high-entropy alloy surface strengthening. The single-phase high-entropy alloy is an Al<x>CrCoFeMnNi alloy, wherein x represents the mole number, and is equal to 0-0.5; after the single-phase high-entropy alloy is subjected to solution treatment and surfacepretreatment, the surface of the high-entropy alloy is strengthened through ultrasonic impact equipment; and the high-entropy alloy is of a single-phase face-centered cubic structure, a certain depthof plastic deformation layer is formed on the surface of the high-entropy alloy after ultrasonic impact, grains are obviously refined, a gradient structure is formed from the surface to the core, andhardness and abrasion resistance are significantly improved. According to the method, a fine structure and a large number of microscopic defects can be obtained on the surface of the high-entropy alloy while the chemical composition of the surface of the high-entropy alloy is ensured to be unchanged and the toughness of the core is ensured, thus the hardness of the surface of the high-entropy alloy is increased by 1.8-2.5 times, the abrasion resistance is increased by 1.3-2.5 times, the method is simple, easy to operate, safe, reliable, small in energy consumption, economical and practical.
Owner:CHINA UNIV OF PETROLEUM (EAST CHINA)

Manufacturing method of shield gate trench power device

The invention provides a manufacturing method of a shield gate trench power device. The method comprises the following steps of: providing a substrate, forming at least one first trench in a device unit region of the substrate, forming at least one second trench in an electrode connection region of the substrate, and forming first dielectric layers on the side walls and the bottoms of the first trench and the second trench; forming a shielding gate in the first trench, partially filling the first trench with the shielding gate, and filling the second trench with a conductive material; forminga second dielectric layer which fills the first trench and covers the surface of the substrate and the conductive material; removing the second dielectric layer on the device unit region by adopting adry isotropic etching process, and exposing a part of the first trench; forming a gate in the first trench. According to the invention, before the gate is formed, the second dielectric layer on the device unit region is removed through dry isotropic etching, and part of the first trench is exposed, so that compared with the traditional wet etching removal, the process time is shortened, and the undercutting problem is effectively reduced and even avoided.
Owner:GUANGZHOU CANSEMI TECH INC

Carburizing direct quenching process for large-scale wind power gear/gear shaft

The invention relates to a carburizing direct quenching process for a large-scale wind power gear/gear shaft. The process comprises the following steps of: (1) carburizing at the temperature of between 910 and 970 DEG C for 8 to 72 hours, wherein C1 is 0.9 to 1.2 percent C; (2) diffusing at the temperature of between 910 and 970 DEG C for 2 to 8 hours, wherein C2 is 0.65 to 0.9 percent C; (3) keeping temperature at low temperature of between 620 and 700 DEG C for 2 to 8 hours; (4) keeping the temperature at the temperature of between 810 and 850 DEG C for 2 to 8 hours before oil extraction; (5) performing the oil extraction, namely moving workpieces from a carburizing furnace to a quenching furnace for quenching; and (6) tempering in a tempering furnace at the temperature of between 150 and 200 DEG C for 4 to 48 hours. In the carburizing direct quenching process for the large-scale wind power gear/gear shaft, a process of direct tapping and quenching after carburizing is adopted, the intermediate temperature heat-preserving phase after the carburizing is added, the time of the process is reduced by about one third, the cost is reduced by about one half, the length of martensite of the workpieces can be reduced, and the number of residual austenite can be reduced obviously.
Owner:天津市祥威传动设备有限公司

Circuit board structure and making method

The invention provides a kind of circuit board's structure and its preparation method, which includes: to form No.1 and No. 2 dielectric layer on the No. 1 and No. 2 loading plate, then separate one side of the No. 1 and No. 2 circuit layer that are formed on the No. 1 and No. 2 loading plate into one No. 3 dielectric layer and then laminate them, embed the No. 1 circuit layer into the position between the No. 1 dielectric layer and the No. 3 dielectric layer, embed the No. 2 circuit layer into the position between the No. 2 dielectric layer and No. 3 dielectric layer, and to form a No. 3 circuit layer on the outer surface of the No. 1 dielectric layer, form a No. 4 circuit layer on the outer surface of the No. 2 dielectric layer; the circuit board structure of the invention includes: sandwich layer plate, No. 3 circuit layer, No. 4 circuit layer; the circuit board structure of the invention and its preparation method enhances the wiring density for the circuitry of the circuit board, shortens the path for transmitting signal, improves the electric property quality of the circuit board, simplies the working procedures, shortens the time for all working procedures and reduces the cost for all working procedures, lessens the thcickness of circuit board, which meets the development trendancy of micromation.
Owner:PHOENIX PRECISION TECH CORP

Chip positioning clamp of vacuum eutectic soldering, manufacturing method and chip transferring method

The invention discloses a position clamp of vacuum eutectic soldering, a manufacturing method and a chip transferring method. The positioning clamp comprises a substrate, a supporting step and a limiting step. The substrate is provided with an adsorbing hole. The supporting step is used for supporting a chip. The limiting step is used for limiting the chip. The manufacturing method comprises the steps of: forming the supporting step on the surface of substrate; forming the limiting step on the surface of the supporting step; and manufacturing the adsorbing hole on the center position of the substrate. The chip transferring method comprises the steps that an adsorbing head adsorbs the chip positioning clamp; the adsorbing head adsorbs the chip into the limiting step of the chip positioning clamp through the absorbing hole; the chip is moved to a suitable position in a packaging box; and the adsorbing head is dismounted, and a pressure rod is installed. By adopting the positioning clamp, the manufacturing method and the chip transferring method, the chip transferring process is simplified, the processing time is saved, the position tolerance in the chip transferring process is reduced, and the position precision is improved.
Owner:SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST

Frame sealing glue coating device

The invention discloses a frame sealing glue coating device for shortening the process time of coating frame sealing glue, improving the coating efficiency and improving the thickness uniformity of coating the frame sealing glue. The frame sealing glue coating device comprises a storage cavity, a nozzle, a connecting guide pipe and a power driving component, wherein the nozzle comprises a nozzle cavity and a nozzle opening; the nozzle opening is positioned below the nozzle cavity and is matched with the shape of a frame sealing glue coating zone of a baseplate; the connecting guide pipe is used for communicating a storage cavity and the nozzle cavity; the power driving component is used for squeezing frame sealing glue in the storage cavity to the nozzle cavity through the connecting guide pipe and is squeezed out through the nozzle opening. When the power driving component drives the frame sealing glue to be squeezed out from the nozzle opening, the frame sealing glue can be integrally coated to the frame sealing glue coating zone of the baseplate, so that the process time of coating the frame sealing glue is greatly shortened and the coating efficiency is improved by the adoption of the solution. Furthermore, owing to integrated coating of the frame sealing glue, a coating start end and a coating stop end are cancelled, so that coating overlap can be avoided, and thus the thickness uniformity of coating the frame sealing glue is improved.
Owner:HEFEI BOE OPTOELECTRONICS TECH +1

Wet releasing method for silicon-based MEMS device by using KOH solution

The invention provides a wet releasing method for a silicon-based MEMS device by using a KOH solution. The silicon-based MEMS device has a silicon substrate, and the upper surface of the silicon substrate has a prepared circuit structure layer. The method comprises the following steps: subjecting the lower surface of the silicon substrate to mechanical polishing, wherein a mechanical damage layer is formed on the lower surface of the silicon substrate; covering a photoresist on the circuit structure layer at first, then removing the mechanical damage layer by using a silicon etching solution and removing the photoresist; allowing a membrane resisting corrosion by the KOH solution to grow on the lower surface of the silicon substrate, on which the mechanical damage layer has been removed, and enabling the membrane to form a pattern; and finally, using the KOH solution heated in a water bath to complete wet releasing. According to the invention, conventional equipment is used, process flow is simple, process time is saved, and production cost is low; and since the wet releasing method for the silicon-based MEMS device by using the KOH solution is compatible with a traditional micro machining process, production efficiency is further improved.
Owner:锐立平芯微电子(广州)有限责任公司

Excessive dyeing liquid extrusion discharging device for cloth

The invention discloses an excessive dyeing liquid extrusion discharging device for cloth. The device comprises a base plate, the base plate is provided with a connecting column and a vertical plate,the upper end of the connecting column is provided with a diagonal plate, a guide rod is arranged between the side faces of the vertical plate and the connecting column and provided with a sleeve, thesleeve is provided with a rack in the length direction, the rack is provided with an incomplete gear, and a spring is arranged between the sleeve and the vertical plate; the sleeve is provided with abracket, the end portion of the bracket is provided with a through hole, a gravity lifting rod penetrates through the through hole, and the end, facing the diagonal plate, of the gravity lifting rodis provided with an extruding plate. Compared with the prior art, the excessive dyeing liquid extrusion discharging device for the cloth has the advantages that through the high-speed rotation of theincomplete gear, the sleeve reciprocates at the high speed to drive the extruding plate to quickly slide on the diagonal plate, excessive dyeing liquid on the dyed cloth can be quickly discharged in cooperation with gravity without draining or air-drying the cloth, the process time is saved, and the material cost is reduced.
Owner:YI HE STOCK
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