92results about How to "Shorten process time" patented technology

The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.

The invention belongs to the field of food processing and discloses a technology for processing a formaldehyde-free and benzo(alpha)pyrene-free smoked meat product. The technology comprises the following steps of 1, raw material selection and pretreatment, 2, pickling liquid preparation and pickling, 3, washing and drying in air, 4, pre-heating, drying and smoking, and 5, heat dissipation, vacuum packaging, labeling and warehousing. The technology adopts a sectional-type baking technology, improves product quality and solves the problems of meat product surface scabbing, drying and hardening caused by the traditional technology. The technology simplifies and optimizes the traditional smoking technology, shortens processing time, reduces a production cost, obviously improves product quality, and well solves the problems of meat product surface scabbing, drying and hardening caused by the traditional technology. Through the combination of the processes and use of a smoking solution which has effects of coloring and improving a taste and is safe, the formaldehyde-free and benzo(alpha)pyrene-free smoked meat product is obtained.

The invention provides methods for manufacturing a pixel structure, a display panel and a photoelectrical device. The method for manufacturing the pixel structure comprises the steps as follows: firstly, a baseplate is provided and is provided with a transistor area, a capacitor area and a pixel area; subsequently, a film transistor and a capacitor electrode are formed on the baseplate, wherein, the capacitor electrode is covered by a dielectric layer; then, a color filter layer is formed on the film transistor and the capacitor electrode, and a protection layer is formed on the color filter layer; patterned photoresist layers with different thicknesses are formed on the protection layer, and partial protection layer and partial patterned photoresist layers are removed sequentially to expose partial source/drain electrode of the film transistor and partial protection layer; then, the protection layer is covered by a conductive layer in a conformal way, and partial patterned photoresist layer is removed to define a pixel electrode. The invention can reduce the manufacturing cost, shorten technical time and increase the productivity, and the capacitance value of the capacitance stored in the pixel structure is improved effectively.

The invention discloses a porous silicon nitride ceramics composing prescription and a method for the products thereof, containing the following components by weight: 50-70 per centsilicon nitride powder, 5-30 per cent bentonite, 0-10 per cent sintering additives and 20-30 per cent water. The sintering additives, contain at least one of Y2O3, Al2O3 and MgO and the method includes: weighing the components except water before placing into a ball mill for dry mixing-grinding to make a mixed powder which is then put into a wheel roller for wheel grinding and kneading to obtain a pug; putting the pug into an extruder for extrusion forming to obtain a shaped body; then drying the shaped body before putting into an atmosphere oven where the shaped body is heated to a temperature of 1700-1850 DEG C in the nitrogen at a heating rate of 10 DEG C/min and then insulation sintered for 1 to 3 hours at a nitrogen pressure of 1-6 atmospheric pressure to obtain a sintered body . The porous silicon nitride ceramics of the invention can be widely used as matrix of filters for gas separation at high temperature and in corrosive atmosphere and as heat-resistant or enhanced materials for power generation gas turbines, engines and space shuttles.

The invention discloses a method for improving surface performance of a single-phase high-entropy alloy, and belongs to the technical field of high-entropy alloy surface strengthening. The single-phase high-entropy alloy is an Al<x>CrCoFeMnNi alloy, wherein x represents the mole number, and is equal to 0-0.5; after the single-phase high-entropy alloy is subjected to solution treatment and surfacepretreatment, the surface of the high-entropy alloy is strengthened through ultrasonic impact equipment; and the high-entropy alloy is of a single-phase face-centered cubic structure, a certain depthof plastic deformation layer is formed on the surface of the high-entropy alloy after ultrasonic impact, grains are obviously refined, a gradient structure is formed from the surface to the core, andhardness and abrasion resistance are significantly improved. According to the method, a fine structure and a large number of microscopic defects can be obtained on the surface of the high-entropy alloy while the chemical composition of the surface of the high-entropy alloy is ensured to be unchanged and the toughness of the core is ensured, thus the hardness of the surface of the high-entropy alloy is increased by 1.8-2.5 times, the abrasion resistance is increased by 1.3-2.5 times, the method is simple, easy to operate, safe, reliable, small in energy consumption, economical and practical.

The invention discloses a preparation method of a PERC solar cell. The preparation method comprises the following steps of texturing, diffusing, back polishing, etching, impurity glass removal, passivation lamination film deposition on a back surface, a silicon nitride anti-reflection layer deposition on a front surface, local opening in the back surface, metal paste silk-screen printing on the front surface and the back surface and sintering, wherein the step of passivation lamination film deposition on the back surface comprises the following steps of (1) depositing an Al2O3 thin film on the back surface of a silicon wafer battery by an atomic layer deposition method; and (2) placing the battery in the step (1) in a tubular furnace for pre-annealing, depositing a SiO2 thin film on the battery, and depositing a SiNx thin film on the above SiO2 thin film. The steps of annealing and SiO2/SiNx thin film deposition are integratedly carried out in the same tube, thus, the step of separate annealing of the Al2O3 passivation film and an annealing tube are omitted, the process time is saved, the production cost is reduced, and the preparation method is applicable to industrial production.

The invention provides a manufacturing method of a shield gate trench power device. The method comprises the following steps of: providing a substrate, forming at least one first trench in a device unit region of the substrate, forming at least one second trench in an electrode connection region of the substrate, and forming first dielectric layers on the side walls and the bottoms of the first trench and the second trench; forming a shielding gate in the first trench, partially filling the first trench with the shielding gate, and filling the second trench with a conductive material; forminga second dielectric layer which fills the first trench and covers the surface of the substrate and the conductive material; removing the second dielectric layer on the device unit region by adopting adry isotropic etching process, and exposing a part of the first trench; forming a gate in the first trench. According to the invention, before the gate is formed, the second dielectric layer on the device unit region is removed through dry isotropic etching, and part of the first trench is exposed, so that compared with the traditional wet etching removal, the process time is shortened, and the undercutting problem is effectively reduced and even avoided.

The invention relates to a carburizing direct quenching process for a large-scale wind power gear/gear shaft. The process comprises the following steps of: (1) carburizing at the temperature of between 910 and 970 DEG C for 8 to 72 hours, wherein C1 is 0.9 to 1.2 percent C; (2) diffusing at the temperature of between 910 and 970 DEG C for 2 to 8 hours, wherein C2 is 0.65 to 0.9 percent C; (3) keeping temperature at low temperature of between 620 and 700 DEG C for 2 to 8 hours; (4) keeping the temperature at the temperature of between 810 and 850 DEG C for 2 to 8 hours before oil extraction; (5) performing the oil extraction, namely moving workpieces from a carburizing furnace to a quenching furnace for quenching; and (6) tempering in a tempering furnace at the temperature of between 150 and 200 DEG C for 4 to 48 hours. In the carburizing direct quenching process for the large-scale wind power gear/gear shaft, a process of direct tapping and quenching after carburizing is adopted, the intermediate temperature heat-preserving phase after the carburizing is added, the time of the process is reduced by about one third, the cost is reduced by about one half, the length of martensite of the workpieces can be reduced, and the number of residual austenite can be reduced obviously.

The invention relates to the field of lithium ion batteries, and specifically relates to a preparation method of a lithium ion battery sizing agent. The preparation method of the lithium ion battery sizing agent disclosed by the invention comprises the following five steps: dry material blending, low-speed high-viscidity stirring, medium-speed medium-viscidity stirring, high-speed low-viscidity stirring, viscidity modification and sizing agent discharge. The preparation method can be used for preparing an oily positive electrode sizing agent, an oily negative electrode sizing agent and an aqueous negative electrode sizing agent, the special working procedure of prefabricating a glue solution can be saved, the technological operating steps of the blending working procedure are simplified, the technological time is shortened, the utilization rate and capacity of the equipment are improved, gluing equipment, glue solution storage equipment or transfer equipment does not need to be purchased, the automation degree of blending is improved, and the uniformity and stability of the sizing agent are improved.

The invention is concerned with the illumination equipment and the corresponding method for the alternating current direct drive, the conformity commutating circuit and the light-emitting diode (LED). The LED illumination equipment includes the base-board, the top base-board, and the bottom base-board. The bottom base-board uses the manufacture of the integrate circuit to implement the commutating circuit, and sets the fit electric point on the surface. The top base-board uses the manufacture of the integrate circuit to implement the several LED in it by the arrangement mode of insulating independent N*M matrix. Between the N*M of LED forms the fit circuit by the connection of the lead. The top base-board and the bottom base-board are opposite, and finish the electric connection between the commutating circuit and the LED by the metal protruding block.

The invention provides a kind of circuit board's structure and its preparation method, which includes: to form No.1 and No. 2 dielectric layer on the No. 1 and No. 2 loading plate, then separate one side of the No. 1 and No. 2 circuit layer that are formed on the No. 1 and No. 2 loading plate into one No. 3 dielectric layer and then laminate them, embed the No. 1 circuit layer into the position between the No. 1 dielectric layer and the No. 3 dielectric layer, embed the No. 2 circuit layer into the position between the No. 2 dielectric layer and No. 3 dielectric layer, and to form a No. 3 circuit layer on the outer surface of the No. 1 dielectric layer, form a No. 4 circuit layer on the outer surface of the No. 2 dielectric layer; the circuit board structure of the invention includes: sandwich layer plate, No. 3 circuit layer, No. 4 circuit layer; the circuit board structure of the invention and its preparation method enhances the wiring density for the circuitry of the circuit board, shortens the path for transmitting signal, improves the electric property quality of the circuit board, simplies the working procedures, shortens the time for all working procedures and reduces the cost for all working procedures, lessens the thcickness of circuit board, which meets the development trendancy of micromation.

The laminated high melting point soldering layer includes: a laminated structure which laminated a plurality of three-layered structures, the respective three-layered structures including a low melting point metal thin film layer and a high melting point metal thin film layers disposed on a surface and a back side surface of the low melting point metal thin film layer; a first high melting point metal layer disposed on the surface of the laminated structure; and a second high melting point metal layer disposed on the back side surface of the laminated structure. The low melting point metal thin film layer and the high melting point metal thin film layer are mutually alloyed by TLP, and the laminated structure, and the first high melting point metal layer and the second high melting point metal layer are mutually alloyed by the TLP bonding.

The invention discloses a new bath bleaching technique for medical dressing, which comprises two steps, namely prewashing and bleaching, wherein the prewashing step is as follows: adding 0.5 to 1 weight percent of cleaning bleacher and 0.1 to 0.5 weight percent of refining agent of the dressing, prewashing the dressing from 10 to 40 minutes in a reaction kettle at a temperature range of between 30 and 90 DEG C, discharging liquid, then pressurizing and rinsing or rinsing the dressing by liquid flow in the reaction kettle for 10 to 25 minutes, and discharging liquid; and after prewashing the dressing, adding bleacher containing sodium hydroxide and oxydol in the reaction kettle, and bleaching the dressing. The technique effectively solves the problems that the prior bleaching technique consumes much time and much energy and produces much sewage, the product becomes yellow and crisp easily, and the like. By adopting the technique, the total cost reduces greatly; and the technique has favorable economic benefit and social benefit.

The invention provides a cutting technique suitable for cutting a workpiece. The cutting technique comprises the following steps: at first, an optics membrane is stuck on the surface of the workpiece; then, the surface of the workpiece is cut by a machining tool, so as to form an initial crack on the edge of the workpiece; finally, a cutting beam is supplied by which the workpiece and the optics membrane are cut simultaneously starting from the initial crack. Employing the cutting technique of the invention can not only save the technique time, and reduce the technique cost, but also have a better rate of finished products.

The invention discloses a sealing agent curing device, and aims to solve the problems that the product yield is reduced and the curing time is long when a curing device in the prior art is used for performing sealing agent curing. The seal material curing device comprises a seal box, an ultraviolet source arranged in the seal box and optical fibers arranged in the seal box and connected with the ultraviolet source, wherein ultraviolet light of the ultraviolet source is transmitted onto the position of a to-be cured sealing agent on a package substrate in the seal box, and is exposed in the position, so that the light emitted from the ultraviolet source cannot be scattered to other positions, and a mask plate is not required to be independently arranged for shielding.

The invention discloses a position clamp of vacuum eutectic soldering, a manufacturing method and a chip transferring method. The positioning clamp comprises a substrate, a supporting step and a limiting step. The substrate is provided with an adsorbing hole. The supporting step is used for supporting a chip. The limiting step is used for limiting the chip. The manufacturing method comprises the steps of: forming the supporting step on the surface of substrate; forming the limiting step on the surface of the supporting step; and manufacturing the adsorbing hole on the center position of the substrate. The chip transferring method comprises the steps that an adsorbing head adsorbs the chip positioning clamp; the adsorbing head adsorbs the chip into the limiting step of the chip positioning clamp through the absorbing hole; the chip is moved to a suitable position in a packaging box; and the adsorbing head is dismounted, and a pressure rod is installed. By adopting the positioning clamp, the manufacturing method and the chip transferring method, the chip transferring process is simplified, the processing time is saved, the position tolerance in the chip transferring process is reduced, and the position precision is improved.

The invention provides a parallel approval method and system based on a scheduling workflow. According to the method and the system, a scheduling engine is embedded into a working node corresponding to a workflow; different approval processes are sequentially activated according to an approval process configuration sequence; the business scheduling of the approval platform of the items involved incooperation in the cross-business system is realized, the variable and variable approval items are subjected to business handling in the cross-department approval system through the scheduling workflow, the handling time limit of the parallel approval items is greatly shortened, and thus the cross-department collaborative handling efficiency is improved.

The invention discloses a frame sealing glue coating device for shortening the process time of coating frame sealing glue, improving the coating efficiency and improving the thickness uniformity of coating the frame sealing glue. The frame sealing glue coating device comprises a storage cavity, a nozzle, a connecting guide pipe and a power driving component, wherein the nozzle comprises a nozzle cavity and a nozzle opening; the nozzle opening is positioned below the nozzle cavity and is matched with the shape of a frame sealing glue coating zone of a baseplate; the connecting guide pipe is used for communicating a storage cavity and the nozzle cavity; the power driving component is used for squeezing frame sealing glue in the storage cavity to the nozzle cavity through the connecting guide pipe and is squeezed out through the nozzle opening. When the power driving component drives the frame sealing glue to be squeezed out from the nozzle opening, the frame sealing glue can be integrally coated to the frame sealing glue coating zone of the baseplate, so that the process time of coating the frame sealing glue is greatly shortened and the coating efficiency is improved by the adoption of the solution. Furthermore, owing to integrated coating of the frame sealing glue, a coating start end and a coating stop end are cancelled, so that coating overlap can be avoided, and thus the thickness uniformity of coating the frame sealing glue is improved.

The invention discloses a storage battery staged internal formation charging process and relates to the field of storage battery formation, solving the technical problems of long formation time and low electricity utilization rate in the prior art. In the internal formation charging process disclosed by the invention, staged treatment is carried out according to the principle of the formation process, different internal formation charging methods are adopted according to different characteristics of each stage, and depolarization is carried out on a storage battery by virtue of deep discharging and standing, so that the process time of internal formation can be shortened, and the electricity consumption can be reduced.

A TFT array half exposure photo etching technique sets photo mask plate lower than the marginal resolution ratio pattern at the slot of the thin film transistor, applying photo etching at the liner of the already formed half semi conductor film and metal film. It can be used for TFT-LCD silicon island pattern and source/leakage pattern formation, using one time photo etching process to form the above pattern, with one more less photo etching times, reduced photo etching mask plate cost and processes, playing a big role in saving cost, reducing process time and increasing production volume.

The invention provides a wet releasing method for a silicon-based MEMS device by using a KOH solution. The silicon-based MEMS device has a silicon substrate, and the upper surface of the silicon substrate has a prepared circuit structure layer. The method comprises the following steps: subjecting the lower surface of the silicon substrate to mechanical polishing, wherein a mechanical damage layer is formed on the lower surface of the silicon substrate; covering a photoresist on the circuit structure layer at first, then removing the mechanical damage layer by using a silicon etching solution and removing the photoresist; allowing a membrane resisting corrosion by the KOH solution to grow on the lower surface of the silicon substrate, on which the mechanical damage layer has been removed, and enabling the membrane to form a pattern; and finally, using the KOH solution heated in a water bath to complete wet releasing. According to the invention, conventional equipment is used, process flow is simple, process time is saved, and production cost is low; and since the wet releasing method for the silicon-based MEMS device by using the KOH solution is compatible with a traditional micro machining process, production efficiency is further improved.

The invention relates to a print fabric and color fabric preparation method. The preparation method comprises the following steps: designing a pattern and providing a moisture permeable waterproof film; jet-printing the designed print pattern on one side of the moisture permeable waterproof film by digital inkjet printing technology and checking the color; providing a fabric which is not dyed or printed and has fine denier or see-through property; and bonding the jet-printed side (on which the print pattern is jet-printed) of the moisture permeable waterproof film with the fabric so that the print pattern can be seen through the fabric. By adopting the method, the aim of reinforcing the fastness to washing, fastness of dyeing, dyeing fastness to washing, dyeing fastness to light and dyeing fastness to friction of the print fabrics can be achieved, the preparation process time can be shortened and the preparation cost can be lowered and pollution is avoided.

The invention discloses an excessive dyeing liquid extrusion discharging device for cloth. The device comprises a base plate, the base plate is provided with a connecting column and a vertical plate,the upper end of the connecting column is provided with a diagonal plate, a guide rod is arranged between the side faces of the vertical plate and the connecting column and provided with a sleeve, thesleeve is provided with a rack in the length direction, the rack is provided with an incomplete gear, and a spring is arranged between the sleeve and the vertical plate; the sleeve is provided with abracket, the end portion of the bracket is provided with a through hole, a gravity lifting rod penetrates through the through hole, and the end, facing the diagonal plate, of the gravity lifting rodis provided with an extruding plate. Compared with the prior art, the excessive dyeing liquid extrusion discharging device for the cloth has the advantages that through the high-speed rotation of theincomplete gear, the sleeve reciprocates at the high speed to drive the extruding plate to quickly slide on the diagonal plate, excessive dyeing liquid on the dyed cloth can be quickly discharged in cooperation with gravity without draining or air-drying the cloth, the process time is saved, and the material cost is reduced.

The invention provides a biological cellulose membrane manufacturing method, comprising the steps of: preparing bacterial celluloses which is obtained through fermentation culturing of microbes capable of generating bacterial celluloses; placing the bacterial celluloses in an enclosed space containing water and having a temperature from 100 DEG to 140 DEG and a pressure from 1.2 kg/cm2 to 1.5 kg/cm2 for 25-75 minutes to obtain expanded bacterial celluloses; successively placing the expanded bacterial celluloses in an acid solution and water for cleaning to be neutral to obtain a biological cellulose membrane. The method can shorten manufacturing time; in addition, the expanded bacterial celluloses can increase the area of the bacterial celluloses to reduce cost.

The glass plate pressure defoaming machine for defoaming glass plates in some boxes includes one defoaming reaction furnace, one loading stage and one unloading stage. The defoaming reaction furnace has one fire hole and one sliding table inside the fire hole. When the loading stage is in its first position, several boxes may be loaded; and when it is moved to the second position, the boxes may be transferred to the sliding table of the defoaming reaction furnace for defoaming the glass plates. The boxes after defoaming may be unloaded with the unloading stage from the second position to the third position.

The invention discloses a light-emitting diode packaging structure, which comprises a substrate unit, a light-emitting unit and a package colloid unit. The substrate unit is provided with a substrate body, a positive electrode trace and a negative electrode trace, wherein the positive electrode trace and the negative electrode trace are respectively arranged on the substrate body. The light-emitting unit is provided with a plurality of LED chips on the substrate body, wherein each LED chip is provided with a positive electrode side and a negative electrode side which are respectively and electrically connected with the positive electrode trace and the negative electrode trace. The package colloid unit is provided with a plurality of package colloids which are respectively coated on the LED chips.

The invention discloses a radix cyathulae preparation method. The radix cyathulae preparation method includes the steps: pretreatment of radix cyathulae, preparation of preparation liquid, infiltration, steaming, drying and the like. By adoption of the preparation liquid for infiltration of the radix cyathulae, addition of alum which is an auxiliary material is avoided, process time is shortened, irritation and toxicity can be effectively weakened, consumption of auxiliary materials is reduced, and loss of effective ingredients of the radix cyathulae in a production process is reduced. The prepared radix cyathulae has evident curative effects of removing stasis, promoting menstrual flow, easing tension of joints and inducing diuresis for treating stranguria, and low product loss and high yield are realized.

The invention discloses a full-automatic cloth-applying and drying unit comprising a cloth-applying machine assembly and a drying machine assembly. The cloth-applying machine assembly comprises a cloth delivery mechanism, a sheet material delivery mechanism, a rubber roller cloth-applying mechanism, and a cutting mechanism. The cloth delivery mechanism is composed of a controllable cloth roll feeding mechanism, a cloth buffering mechanism, and a leather roller adhesive-applying mechanism. A numerical-control sprocket transmission mechanism is fixed on a frame. The rubber roller cloth-applying mechanism is arranged above the numerical-control sprocket transmission mechanism. The numerical-control sprocket transmission mechanism is docked with a delivery device of the drying machine. A drying box is arranged above the delivery device of the drying machine. With the unit and the method provided by the invention, cloth-applying process flow full automation can be realized, worker number can be greatly reduced, process working time can be shortened, land occupation is low, flexibility is high, product quality is stable, production efficiency can be effectively improved, and cost can be effectively reduced.

The invention discloses a thin-film solar cell module and a processing method thereof. Firstly, a backlight conductive film, an electric layer and a phototropic conductive film are plated on a substrate in sequence, and then marking and cutting are carried out to cause the phototropic conductive film, the electric layer and the backlight conductive film to be cut off to form a fourth tangent groove; the phototropic conductive film and the electric layer are cut off to form a fifth tangent groove; the phototropic conductive film and the electric layer are cut off to form a sixth tangent groove; an electric conductor is filled between the detached surfaces of the phototropic conductive film in the fourth tangent groove, insulators are filled in the detached surfaces of the electric layer and the backlight conductive film, and electric conductors are filled in the fifth tangent groove. Marking operation is carried out after coating is finished completely, therefore, the process time is reduced, the process steps are greatly simplified, and the pollution to the battery due to a plurality of times of marking and cleaning is reduced.

The invention provides a back-illuminated image sensor packaging structure and a preparation method thereof. The back-illuminated image sensor packaging structure includes: a supporting substrate; a back-illuminated image sensor located on the supporting substrate; a laser through hole located on the supporting substrate Inside, and through the support substrate up and down; dielectric layer, located on the side wall of the laser through hole and the surface of the support substrate away from the back-illuminated image sensor; conductive plug, located in the laser through hole, and electrically connected to the back-illuminated image sensor ; The rewiring layer is located on the surface of the dielectric layer and is electrically connected to the conductive plug; the solder bump is located on the surface of the rewiring layer away from the dielectric layer and is electrically connected to the rewiring layer. The present invention forms a laser through hole in the supporting substrate as the lead-out through hole for electrically leading out the back-illuminated image sensor, does not involve a through-silicon hole process, can effectively save process steps, greatly shorten process time, and save photoresist and mask use, greatly saving costs.