57results about How to "Reduce thermal strain" patented technology

An exposure apparatus includes a projection optical system for projecting a pattern of a mask onto a substrate, a holder for holding the substrate and having a first channel for the fluid to flow, and a fluid supply unit for supplying the fluid from the first channel of the holder to at least part of a space between the projection optical system and the substrate, the exposure apparatus exposing the substrate via the projection optical system and the fluid.

In a small semiconductor device having external terminals on a semiconductor element and a semiconductor module mounted with the small semiconductor device, disconnection of the external terminals is prevented when a temperature change occurs under the conditions that the semiconductor device is mounted on a printed circuit board. To achieve this a projection is formed on a land which is an external terminal bonding area of the semiconductor device, and a protruded portion of the projection is bonded to the external terminal. An intervening portion of a protective film made of resin material is formed between the lands and semiconductor element.

A power semiconductor module and an inverter apparatus in which a device or a joining part is not mechanically damaged even when the temperature in use becomes a high temperature in the range of 175 to 250° C., resulting in excellent reliability at high temperature retaining test and thermal cycling test. Low thermal expansion ceramic substrates are disposed above and below the device. A material having a coefficient of thermal expansion of 10 ppm/K or less is disposed between the ceramic substrates. In addition, an inorganic material having a coefficient of thermal expansion in the range of 2 to 6 ppm/K or less is disposed around the device.

The invention provides a method for preparing a thin film heterostructure. The method comprises the steps of providing a wafer substrate with an injection surface; conducting ion injection from the injection surface on the wafer substrate to form an injection defect layer at the predetermined depth of the wafer substrate; providing a support substrate, and performing temperature rising bonding onthe support substrate and the wafer substrate; annealing a obtained structure to form a continuous defect layer; stripping part of the wafer substrate through external force assisting, and forming wafer film on the wafer substrate to obtain a thin film heterostructure including the support substrate and the wafer film. The method can reduce the thermal strain of a bonding structure through the temperature rising bonding, so that the bonding structure remains stable and complete in the high-temperature process, and avoid the problem of film cracking caused by thermal mismatch in the stripping process, the bonding structure is separated from the continuous defect layer through the external force assisting method, so that no effect is caused on a bonding interface, and an external force assisting stripping method can reduce stripping temperature and stripping time, thereby reducing the cumulative effect of thermal stress in a piezoelectric crystal.

The invention provides a thin film heterostructure preparation method. The method comprises steps: a wafer substrate with an injection surface is provided; ion implantation is carried out on the wafersubstrate from the injection surface, and an injection defect layer is formed at a preset depth in the wafer substrate; a support substrate is provided, and the support substrate and the wafer substrate are subjected to temperature rise bonding; the obtained structure is subjected to annealing treatment to form a continuous defect layer; the temperature of the obtained structure is reduced to a preset temperature, reverse thermal stress generated based on temperature reduction strips part of the wafer substrate along the continuous defect layer, and a thin film heterostructure comprising thesupport substrate and the wafer thin film is obtained, wherein the preset temperature is lower than the bonding temperature. In the temperature rise bonding mode, the thermal stress of the bonding structure can be reduced, the bonding structure can keep stable and complete in a high temperature process, the problem of wafer crack generated by thermal mismatch in the stripping process can be effectively solved, and through the reverse thermal stress assisting method, the bonding structure is separated at the continuous defect layer and a bonding interface is not influenced.

A sensor system includes a sensor device (10) and an integrated circuit (20) for driving the device (10). The device (10) includes a sensor body (1) of a silicon-based material, an upper sealing member (2) of a silicon-based material and a lower sealing member (3) of a silicon-based material. The upper sealing member (2) and the lower sealing member (3) are joined together to cooperatively house the body (1) therewithin in an airtight manner. The device (10) and the circuit (20) are formed as a stacked body. The body (1) is electrically connected to a wiring pattern (12) of the circuit (20) through a conductive through-path (4) penetrating the upper sealing member (4) and a mounting electrode (5) provided on an outer surface of the upper sealing member (2). The device (10) is connected to an MID substrate (30) through the circuit (20).

The invention provides a wafer bonding method and a preparation method for a foreign substrate. The wafer bonding method at least comprises the following steps: S1) supplying a first wafer and a second wafer, wherein the first wafer is equipped with a first bonding surface, and the second wafer is equipped with a second bonding surface; S2) preheating before bonding the first wafer and the second wafer; and S3) bonding the first bonding surface of the first wafer with the second bonding surface of the second wafer. According to the scheme, the preheating before the bonding for the wafers is capable of effectively reducing the thermal strain of the foreign bonding structure in a high-temperature post-annealing process, so that the use scope of the foreign bonding can be widened and the reliability of a foreign integrated material can be promoted. Meanwhile, the problems of de-bonding and broken bonding structure caused by thermal strain of the foreign bonding structure in the high-temperature post-annealing process can be solved.

The invention belongs to the technical field of engines and relates to an intensive-cooling steel piston of a gas engine. The piston is made from heat-resisting and high-strength 42CrMo forged steel, an inblock aluminum piston casting mode in the prior art is replaced, the bearing extremity of the piston is improved, and the working reliability of the gas engine is further improved. A combustion chamber is designed to be in a shape of a shallow basin, the specified gas compression ratio can be obtained, and the working requirement of the gas engine is met. An area defined by the piston head portion and the skirt portion is structurally utilized to design an outer cooling cavity and an inner cooling cavity, the outer cooling cavity cools an outer circle of the piston head portion and the side wall of the combustion chamber, and the inner cooling cavity cools the bottom of the combustion chamber. By the adoption of the design, the problem that a single piston cooling cavity difficultly meets the using requirement due to large heat load is solved, heat stress and heat strain produced by the piston bearing high heat load are remarkably reduced, and the fatigue life of the piston is prolonged.

A silicon germanium heterojunction bipolar transistor device and method comprises a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm². Also, the diffusion region is boron-doped at a concentration of 1×10²⁰/cm³ to 1×10²¹/cm³. Additionally, the semiconductor region comprises 5-25% germanium and 0-3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.

Disclosed is a ferritic Cr-containing steel whose thermal expansion coefficient is decreased for advantageously solving problems related to thermal expansion/contraction. Specifically disclosed is a ferritic Cr-containing steel consisting of, in mass%, C: 0.03% or less, Mn: 5.0% or less, Cr: 6-40%, N: 0.03% or less, Si: 5% or less, W:2.0-6.0% and the balance of Fe and unavoidable impurities, which is characterized in that the deposited W is not more than 0.1% and the average thermal expansion coefficient at 20-800 DEG C is less than 12.6 x 10<-6>/ DEG C.

To widely improve an entire manufacturing efficiency by efficiently forming a thermal stress relaxing post, an insulating layer and a solder bump, a rewiring circuit (3) is formed on a wafer (1) by plating, a thermal stress relaxing post (4) made of a conductive material such as a solder or the like is formed on the rewiring circuit (3), an insulating layer (6) made of a polyimide or the like is formed in the periphery of the rewiring circuit (3) and the thermal stress relaxing post (4) except a top surface of the thermal stress relaxing post (4), a solder bump (7) is formed on the thermal stress relaxing post (4), and the thermal stress relaxing post (4), the insulating layer (6) and the solder bump (7) are formed by screen printing.

A semiconductor micro device is provided with a rectangular silicon micro structure chip; a lead frame having a die pad for securing the silicon structure chip comprising a contact portion with the chip; and a resin encapsulating material for encapsulating the silicon structure chip and part of the lead frame; wherein the die pad of the lead frame has a non-contact portion positioned lower than the contact portion not to be in contact with the silicon structure chip, the non-contact portion being formed at least in a position corresponding to a diagonal portion of the silicon structure chip. A clearance between the non-contact portion and the silicon structure chip is filled with the resin encapsulating material, whereby the die pad and the silicon structure chip are bonded to each other by the resin encapsulating material.

An induction heating coil includes a coil section configured to heat a treatment target by induction, a power supply section configured to supply power to the coil section, and a cooling medium passage that is arranged in the power supply section and the coil section, and is configured to supply a cooling medium to the coil section. The coil section, the power supply section, and the cooling medium passage are formed using a metal additive fabrication method.

A fuel nozzle configured to channel fluid toward a combustion chamber within a gas turbine engine and a method for assembling the same are provided. The fuel nozzle includes a first hollow tube fabricated from a first material that has a first coefficient of thermal expansion and a second tube fabricated from a second material that has a second coefficient of thermal expansion that is different from the first coefficient of thermal expansion. The second tube is coupled within the first tube such that the first tube substantially circumscribes the second tube, and the second tube thermally expands approximately at a same rate as the first tube during fuel nozzle operation.

A plurality of attachments having springs hold the outer plate of a fuel tank, and an inner jig positions the inner plate. The attachments are attached to clamp arms which are opened/closed by cylinders. When the overlap portion between the outer and inner plates is welded, the thermal deformation caused by welding is accommodated by the springs. The attachments are spaced from the fuel tank in the order in which the welding point is approached.

A vehicle propulsion system includes a prime mover having a coolant inlet and coolant outlet, a coolant flow controller having a flow control inlet in communication with the prime mover coolant outlet, and a flow control outlet in communication with the prime mover coolant inlet, and a controller that determines a coefficient based upon a power of the prime mover, and that provides a coolant flow command signal to the coolant flow controller based upon the power of the prime mover.

The invention discloses a condensate pump used in a nuclear power station. The condensate pump comprises an outer cylinder body, a pump body, a water outlet case body, a motor frame, a pump shaft, a first stage impeller, a second stage impeller, a last stage impeller, a mechanical seal, a bearing component and a motor, wherein the motor frame is fixed at the upper end of the water outlet case body; the mechanical seal is arranged in an inner cavity of the water outlet case body through a seal case body; the bearing component comprises a plurality of guide bearings and a vertical thrust bearing; the motor is fixed at the upper end of the motor frame and connected to the upper end of the pump shaft; the pump body comprises a double-suction spiral case body, a straight pipe, the second stage guide vane and the last stage guide vane which are arranged in an inner cavity of the outer cylinder body and coaxially connected with each other in sequence from bottom to up; the water outlet case body is fixed at the upper end of the outer cylinder body and connected with the last stage guide vane; a flange mounted on the peripheral surface of a top plate of the straight pipe is connected with a bottom plate of the water outlet case body through a plurality of penetrating rods and nuts which are evenly distributed in the radial direction, so as to grip the second stage guide vane and the last stage guide vane; and an auxiliary support device is further arranged between the pump body and the outer cylinder body.

The invention relates to a corrugated tube type solar heat absorber with the functions of strengthening heat transferring and reducing heat deformation, and belongs to the technical field of solar utilization. The corrugated tube type solar heat absorber aims at solving the problem of heat deformation of a metal tube of a metal round tube solar heat absorber, and achieving the aim of strengthening heat transferring in the metal tube. The corrugated tube type solar heat absorber comprises a vacuum glass cover, and further comprises a corrugated tube; the corrugated tube is installed in the vacuum glass cover, a vacuum section is formed between the corrugated tube and the vacuum glass cover, and a heat transferring fluid channel is formed in the corrugated tube; and the corrugated tube is an outwards-protruding corrugated tube. According to the corrugated tube type solar heat absorber, a round tube in a traditional parabolic groove type solar spotlight system is replaced with the outwards-protruding corrugated tube, so that the aims of strengthening heat transferring, homogenizing temperature field distribution of the tubular heat absorber and reducing the heat deformation of the tubular heat absorber are achieved.

In a method of manufacturing a differential device, a hub of a ring gear is press-fitted to a flange from a first bearing boss side, then a press-fit portion between the flange and the ring gear is equally divided into a plurality of divided regions arranged along a peripheral direction, and simultaneously the divided regions are welded. Accordingly, the press-fit portion between the flange and the ring gear can be efficiently welded while welding distortion of the ring gear is eliminated or reduced even in a case where work windows of a differential case cut into a side surface of the flange on the first bearing boss side to form recessed portions.

The invention relates to a lattice-matched LED epitaxial structure and a preparation method thereof. The invention relates to a nitride light-emitting diode epitaxial structure whose nucleating layer, undoped layer, n type layer, luminous layer and p type layer all have polarization matching and a preparation method, and belongs to the technical field of photoelectronics. The epitaxy structure is provided with a substrate, a AlxGa(1-x)-yInyN nucleating layer, an undoped AlxGa(1-x)-yInyN layer, n type doped AlxGa(1-x)-yInyN layer, a multi-quantum well luminous layer formed by a InaGa(1-a)N well layer and a AlxGa(1-x)-yInyN barrier layer, and a p type doped AlxGa(1-x)-yInyN layer in sequence from bottom to top. Compared with a traditional structure, the epitaxial structure adopts quaternary AlxGa(1-x)-yInyN material matched with luminous layer well material from the nucleating layer to a luminous layer interval and P type doped layer, thereby eliminating a piezoelectric polarization effect between well and barrier layers in the luminous layer, and improving internal quantum luminous efficiency of the LED.

A device is described for heat-treating sheet metal strips (6) having at least one radiator pipe unit (1), which has three pipes located in a common axial plane parallel to the sheet-metal strip (6), namely one middle pipe (2) attachable to a burner and two outer pipes (3) connected at both ends to the middle pipe (2) via pipe elbows (4), and having a bearing pin (9), connected to the two pipe elbows (4) between the middle pipe (2) on one side and the two outer pipes (3) on the other side, on the side of the radiator pipe unit opposite to the burner. To be able to take the occurring thermal expansions in the area of the pipe elbows (4) into consideration, it is proposed that the bearing pin (9) be arranged on a bridge (10), which bridges a gusset (11) between the two pipe elbows (4), having two sections (12) which extend on both sides of the axis of the middle pipe (2) and are inclined at an acute angle to the axis of the middle pipe (2).

A turbocharger (10) with a liquid-cooled turbine housing (12) including an intermediate chamber (30) adjacent to the liquid chamber (20) of the turbine housing (12). The intermediate chamber (30) is between the liquid chamber (20) and a turbine housing exducer wall portion (34), partially near the turbine wheel blades. A preferred intermediate chamber (30) is a core that encloses the volute (18) and completely separates and insulates the hot volute (18) from the relatively cool liquid chamber (20). The intermediate chamber (30) may have a passage (40) as an exhaust gas inlet through the turbine housing exducer wall (24) or as an air inlet through the turbine housing (12) for flow into the intermediate chamber (30).