The invention relates to a fast recovery diode (FRD) chip and a production process thereof. A diode with a P+NN+ structure is produced by adopting the process steps of diffusion pretreatment, double diffusion of a liquid source, back thinning, oxidization, platinum diffusion, photoetching, mesa etching, electrophoresis, sintering, scribing and the like. In the chip production process, a method of carrying out deep junction diffusion by carrying a liquid phosphorous source is adopted, so that the flatness of a diffusion junction is improved and the homogeneity and the stability of a breakdown voltage are strengthened; a method of reducing the concentration of a boron diffusion source and improving the purity of the boron diffusion source is adopted, so that the surge resistance capacity of an FRD is improved; and an electrophoresis glassivation process is adopted, so that the voltage withstanding stability and reliability of a bidirectional voltage stabilizing diode are improved. In addition, the production process has the advantages that the reverse recovery time is shortened, the switching speed is improved, the voltage drop is reduced, the power consumption is reduced, the voltage withstanding stability is improved, and the reliability of the diode is improved.