39results about How to "Improve switching performance" patented technology

The invention discloses a three-phase permanent magnet synchronous motor full-speed-domain driving control system and a control method thereof. The system is composed of a torque limiting module, a full-speed-domain control neural network module, a current control module, a coordinate transformation module-I, a coordinate transformation module-II, a coordinate inverse transformation module, an SVPWM module, a SiC MOSFET driving module, a full-speed-domain position rotating speed observation module, a weak magnetic feedback module and a three-phase permanent magnet synchronous motor. The control method is used for driving the control system. According to the method, accurate tracing of the optimal dq-axis reference current working point is realized based on deep learning, and accurate control of three operation modes of MTPA, field weakening control and MTPV is realized; an improved mobile vision field estimation algorithm is adopted, and the rotor position and the rotor rotating speed are accurately estimated within the full-speed domain range; the SiC MOSFET is used as an inverter switching tube, and a brand new drive circuit is designed to adapt to the operation condition of the electric vehicle.

The invention discloses a packaging method of a power semiconductor packaging structure based on DBC interconnection, and the method employs a DBC interconnection mode, and compared with a conventional metal wire bonding mode, an upper DBC board and a lower DBC board are connected through a large-size copper column, the mode is beneficial to reducing stray inductance, and the copper column can also enhance the heat dissipation effect. According to the phase change material provided by the invention, the nano silicon nitride is generated on the surface of the carbon fiber in situ, and through in-situ synthesis, the nano silicon nitride can form a uniform coating on the surface of the carbon fiber, so that the problem of particle aggregation in the blending process is avoided, and meanwhile, an in-situ generation mode is adopted, so that an effective heat conduction path can be formed on a microstructure; thermal interface thermal resistance is reduced, and heat conduction efficiency is improved, so that the heat conduction performance of the phase-change material is improved; and then stearic acid is adopted to treat the carbon fiber loaded nano boron nitride material, so that the dispersing performance of the carbon fiber loaded nano boron nitride material in paraffin is improved, and the heat conduction efficiency is further improved.

The utility model provides a high-reliability SIC-MOSFET terminal structure, belonging to the technical field of semiconductor devices, the high-reliability SIC-MOSFET terminal structure comprises a source electrode and a drain electrode, the source electrode is the input end of an MOSFET and is used for current in a circuit to enter, and the drain electrode is the output end of the MOSFET and is used for exporting current; a groove and a grating are arranged between the source electrode and the drain electrode, the structure among the source electrode, the drain electrode, the groove and the grating is a FinFET structure, the source electrode and the drain electrode are fixedly connected through the middle groove and the grating, the groove is fixedly connected with the grating, the groove comprises a first groove and a second groove, and the first groove and the second groove are communicated with each other. The first groove is fixedly connected with the source electrode. The problem that an existing SIC-MOSFET0 is prone to being broken down under the conditions of high voltage and high current can be solved.

The invention discloses an information transmission method and device, equipment, a storage medium and a program product. A first network node sends first information to a second network node; wherein the second network node is a network node for generating original movement track prediction information, and the first information comprises indication information for indicating updated movement track prediction information and / or related information of new movement track prediction information; and / or the first network node sends second information to a third network node; wherein the third network node is a network node located behind the first network node on the actual movement track or a network node located behind the first network node in the new movement track prediction information, and the second information comprises the movement track prediction information. By adopting the method and the device, the information is sent to the network node generating the original moving track prediction information through the intermediate node after the moving track prediction information is updated, the related condition of the new prediction information is indicated, and the process of terminal moving track prediction is optimized.

The invention discloses a groove SiC MOSFET device integrated with a reverse freewheeling diode and a preparation method of the groove SiC MOSFET device, and relates to the technical field of semiconductors. Source polycrystalline silicon and a P-shield region form a heterojunction diode in an N-epitaxial layer, so that current flowing through a body diode during reverse conduction of the device is shared, and the risk of degradation of a PW region of the device is reduced. And meanwhile, the P-shield region is arranged below the gate oxide layer, so that the impact of gate oxide of a peak electric field can be inhibited, and the reliability problem of the gate oxide layer of the trench SiC MOSFET is improved. The overlapping area of the grid electrode and the drain electrode is reduced in structural design, so that the purpose of reducing the grid-drain capacitance is achieved, the Miller plateau time is shortened, the switching performance of the device is improved, and the switching loss is reduced.

The invention discloses a power consumption mode switching system, a power consumption mode switching method and a system on chip. The system comprises a task core used for generating an entry request of a preset power consumption mode; the power consumption management core is used for configuring a switching time sequence of a preset power consumption mode; the power consumption controller is connected with the task core and the power consumption management core and is used for receiving the entry request or generating an exit request of a preset power consumption mode according to the received wake-up request; the power consumption mode controller is connected with the power consumption controller and is used for executing a switching time sequence according to the entry request or the exit request so as to generate a control signal; and the plurality of hardware control devices are respectively connected with the power consumption mode controller and are used for entering a preset power consumption mode or exiting the preset power consumption mode according to the control signal, and the control types of different hardware control devices are different. The technical problem that the switching effect of the power consumption mode is poor in the prior art is solved.

The utility model provides a valve seat. The valve seat comprises a first channel and a second channel. One end of the first channel is provided with a first hole for connecting a first outlet pipeline; the second hole is communicated with the inner cavity of the valve; on a plane perpendicular to the axis of the first hole, the projection of the second hole is within the projection of the first hole. One end of the second channel is provided with a third hole for connecting a second outlet pipeline, and the other end is provided with a fourth hole for communicating with the inner cavity of the valve; on a second plane perpendicular to the axis of the third hole, the projection of the fourth hole is in the projection of the third hole. Wherein the minimum distance between the hole wall of the second hole and the hole wall of the fourth hole is equal to the minimum distance between the hole wall of the first hole and the hole wall of the third hole. According to the valve seat, larger runner switching can be achieved with smaller pulling force and shorter stroke.

A handheld steam cleaning machine comprises a main machine shell which is provided with a handheld part and a steam outlet nozzle; a water inlet is formed in the upper end of the water tank; the lower end of the steam generator is provided with a water inlet, and the upper end is provided with a steam outlet; a water outlet of the water tank is connected and communicated with a water inlet of the steam generator through the water inlet pipeline; a steam outlet of the steam generator is connected and communicated with the steam outlet nozzle through the steam outlet pipeline; the electric on-off device is located in the main machine cavity and acts on the water inlet pipeline so as to block or connect the water inlet pipeline; the circuit board is electrically connected with the electric on-off device and the steam generator; and the switching mechanism is arranged on the handheld part and is in control connection with the circuit board. According to the scheme, the water tank and the steam generator are of a split structure, part of water is conveyed into the steam generator from the water tank to be heated and produce steam during use, the steam outlet heat efficiency is improved, and the heating time is shortened.

A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws0.5 / m2K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.

The utility model provides an IGBT driving circuit based on a push-pull structure, and relates to the technical field of power electronic device driving, and the IGBT driving circuit comprises an optocoupler isolation module which is used for receiving a control signal and providing electrical isolation output; the push-pull driving module comprises an NPN type triode Q1 and a PNP type triode Q2 which are complementary and symmetrical; the push-pull driving module is configured as follows: when the optocoupler is conducted, Q1 is saturated and conducted, Q2 is cut off, and a driving current charges an IGBT grid electrode through R2; when the optocoupler is turned off, the Q2 is saturated and turned on, the Q1 is turned off, and the driving current flows through the R3 to discharge the grid electrode of the IGBT. Bidirectional driving current is provided through a push-pull structure, the charge charging and discharging speed of the IGBT grid electrode is increased, the switching loss is reduced, bidirectional driving current is provided through a switch-on resistor R2 and a switch-off resistor R3, the resistance value of the switch-on resistor R2 is selected to be small, the purpose of reducing switch-on loss Eon is achieved, the resistance value of the switch-off resistor R3 is selected to be large, and the purpose of reducing switch-off Vce is achieved.

The invention relates to the technical field of semiconductors, and discloses a double-gate two-dimensional transistor for multifunctional storage and logic calculation, which comprises a substrate, a floating gate layer, a tunneling layer, a channel layer, a top gate insulating layer, a bottom gate electrode, a top gate electrode, a source electrode and a drain electrode, the substrate is an N-type single-polished silicon oxide wafer, the floating gate layer is a graphene layer, the tunneling layer is a hexagonal boron nitride layer, the channel layer is a molybdenum disulfide layer, and the top gate insulating layer is a hexagonal boron nitride layer; the floating gate layer is arranged on the upper surface of the substrate, the tunneling layer covers the upper surface of the floating gate layer, the channel layer is arranged on the upper surface of the tunneling layer, and the top gate insulating layer covers the upper surface of the channel layer. By means of a heterogeneous stack structure of h-BN / MoS graphene and a double-gate independent regulation and control mechanism, single device integration of light perception, nonvolatile storage and logic operation is achieved, additional splicing links of sensing, storage and calculation units in a traditional system are omitted, and a hardware architecture is greatly simplified.

The invention discloses a cigarette sales display cabinet which comprises a display cabinet body, a display area is arranged in the display cabinet body, a display panel is arranged at the bottom of the display area, a plurality of goods storage cavities are formed in the display area, cigarette storage assemblies are installed in the goods storage cavities, and a top transparent cover plate and a front transparent cover plate are arranged outside the display area; a transverse mounting groove and a vertical mounting groove are formed in the display cabinet body, and a pressing assembly is further arranged at the bottom of the vertical mounting groove; a locking assembly is mounted on one side of the top end of the vertical mounting groove; a label strip is arranged on the display panel; through mutual constraint between the top transparent cover plate and the front transparent cover plate, the internal display space is sealed; the locking assembly realizes relative stability of the top transparent cover plate and the front transparent cover plate; the cigarette storage assembly is designed in a drawing mode, so that a user can take and place the cigarettes more conveniently; and the label strip can be used for clamping the written label into the groove, so that the label is convenient to replace and more convenient to move.

The invention provides a shield gate trench device and a preparation method thereof, and the preparation method of the shield gate trench device comprises the following steps: providing a semiconductor layer comprising a substrate and an epitaxial layer, and forming a patterned mask layer on the upper surface of the semiconductor layer; sequentially forming a groove, a first dielectric layer located in the groove and a shielding gate layer filling the bottom of the groove based on the patterned mask layer; thinning the first dielectric layer on the inner wall of the groove above the shield gate layer, obtaining a table top at the same time, and etching the shield gate layer until the upper surface of the shield gate layer is flush with the table top; forming a second dielectric layer covering the surface of the first dielectric layer above the mesa, wherein the first dielectric layer and the second dielectric layer are made of different materials; and forming an isolation layer by taking the second dielectric layer and the mask layer as masks, and removing the second dielectric layer and the first dielectric layer covering the inner wall of the trench above the isolation layer. By optimizing the process for manufacturing the isolation layer, the quality of the isolation layer is improved, and the stability of gate source breakdown is improved.

The present invention relates to a novel packaged power module, comprising: an upper component and a lower component, a laminated structure is constructed by the upper component and the lower component to realize a three-dimensional commutation circuit; the upper component comprises: a plurality of upper bridge arm chips, the upper bridge arm chips are arranged on a first positive electrode layer and a second positive electrode layer, a plurality of lower bridge arm chips, the lower bridge arm chips are arranged on a first upper AC electrode layer and a second upper AC electrode layer; the lower component comprises: a bottom AC electrode layer, the bottom AC electrode layer is respectively connected to the upper bridge arm chip, the first upper AC electrode layer and the second upper AC electrode layer. The present invention can make the parallel switch tube chips be arranged in groups in anti-phase parallel, and two adjacent groups of bridge arms are anti-parallel in the same plane, which can reduce parasitic inductance and improve switch performance.

The invention provides a base station switching method and device and electronic equipment, and relates to the technical field of communication, and the base station switching method comprises the steps that wireless modal characteristics, visual modal characteristics and spatial modal characteristics are obtained, the wireless modal characteristics are used for representing channel information between a base station and a terminal, the visual modal characteristics are used for representing channel information between the base station and the terminal, and the spatial modal characteristics are used for representing channel information between the base station and the terminal; the visual modal features are used for representing information of pictures shot by the base station, and the spatial modal features are used for representing position information of the terminal in the pictures shot by the base station; base station prediction is carried out based on the wireless modal features, the visual modal features and the spatial modal features, and a base station prediction result is obtained; and carrying out base station switching based on the base station prediction result. According to the embodiment of the invention, the optimal service base station can be pre-judged through the wireless modal characteristics, the visual modal characteristics and the spatial modal characteristics, and base station switching is carried out, so that the base station switching effect can be improved.

The invention discloses a cell switching method and system based on cluster RSRP measurement and a storage medium. The method comprises the following steps: acquiring a historical measurement value; the historical measurement value is measurement information of all cells in past first preset duration, and the measurement information comprises first L1-RSRP of all beams; inputting the historical measurement value into a prediction model to obtain a prediction value; the predicted value is a second L1-RSRP of all cells within a second preset duration in the future; carrying out filtering processing on the predicted value to obtain L3-RSRP (Least 3-Reference Signal Received Power); and according to the L3-RSRP, performing cell switching. According to the embodiment of the invention, the prediction accuracy of the model is improved, and the cell switching effect is improved. The method can be widely applied to the technical field of 5G communication.

The utility model provides a high-sealing and large-rigidity deep well electromagnetic valve. The high-sealing and large-rigidity deep well electromagnetic valve comprises an electromagnetic coil assembly, a valve body, a movable iron core and a coil shell. The electromagnetic coil assembly comprises a metal framework, a medium inlet is formed in the upper end of the metal framework, and a pressure-resistant cavity communicated with the medium inlet is formed in the metal framework; the valve body is in threaded connection with the lower end of the metal framework, a valve port communicated with the pressure-resistant cavity is formed in one end of the valve body, a valve port sealing assembly is installed at the valve port, and the valve port sealing assembly is limited between the valve body and the metal framework; the movable iron core is slidably mounted in the pressure-resistant cavity, and a sealing cone used for opening and closing the valve port is arranged at the end, facing the valve port sealing assembly, of the movable iron core. The coil shell is sleeved outside the electromagnetic coil assembly, and the upper end and the lower end of the coil shell are respectively welded and fixed with the metal framework through welding parts; the high-sealing and large-rigidity deep well electromagnetic valve overcomes the defect that an existing small safety electromagnetic valve is not suitable for the depth of three kilometers.

The invention provides a thin film transistor device, a display panel and a display device. The thin film transistor device comprises a source electrode, a drain electrode, a first grid electrode and a second grid electrode, a channel region is arranged between the drain electrode and the source electrode; the first grids are arranged on the channel region at intervals, and the first grids are in short circuit with the source electrode; the second gate is arranged on one side, deviating from the first gate, of the channel region; that is to say, on one hand, the first grid is arranged as the top grid, the second grid is arranged as the bottom grid, electric field distribution in the channel region can be optimized through the top grid and the bottom grid, and then the switching performance of the thin film transistor device can be improved; and on the other hand, the first grid electrode and the source electrode are short-circuited, so that the saturation speed of the IDVD can be improved, and the power consumption of the thin film transistor device can be reduced.

The invention relates to a method for preparing a GaN power device based on magnetron sputtering deposition, and belongs to the field of microelectronics, and the method comprises the steps: sequentially growing an AlN nucleating layer, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer on a substrate; etching the GaN cap layer, growing a source electrode and a drain electrode on an etching area, and annealing the source electrode and the drain electrode; putting the device into direct-current magnetron sputtering equipment, and growing a gate dielectric layer and a gate electrode metal material at the same time; and taking out the device, covering photoresist above a gate electrode region, etching a gate electrode metal material outside the gate electrode region to form a gate electrode, and growing a passivation layer in an etching region to obtain the GaN power device. According to the invention, the deposition of the combination of the gate dielectric layer and the gate electrode metal material is realized in the same chamber, the potential pollution risk in the process steps can be effectively reduced, the interface performance of the device is improved, the preparation efficiency can be improved, and the production cost is reduced.

The invention relates to a rocker device for a valve train of an internal combustion engine, having at least one rocker (1) which is pivotably arranged on a rocker shaft (3) with one lever (1a) for actuating the valve side of at least one gas exchange valve (4, 5) of the internal combustion engine and with two levers (1b, 1c) for the pivotably drivable actuating side, wherein the levers (1a, 1b, 1c) are pivotably supported on the rocker shaft (3) relative to one another and, in order to switch the rocker (1), the first lever (1b) of the actuating side can be coupled to the lever (1a) of the valve side by means of a first coupling mechanism (9) in order to transmit a first lift movement for valve actuation, and the second lever (1c) of the actuating side can be coupled to the lever (1a) of the valve side by means of a second coupling mechanism (10) in order to transmit a second lift movement for valve actuation.

The utility model discloses a new energy controller motor temperature sampling circuit, which is characterized by comprising a power supply filter circuit, a temperature signal sampling circuit, a drive control module and a signal conditioning and amplifying module, the power supply filter circuit is connected with the driving control module, the temperature sampling circuit is connected with the driving control module, and the driving control module is connected with the signal conditioning and amplifying module. The motor temperature sampling accuracy is improved, the motor temperature sampling is not easily influenced by the temperature, the motor temperature sampling reliability is effectively improved, and the motor is protected more timely.

The utility model belongs to the technical field of uninterruptible power supply equipment, and particularly relates to a vanadium liquid electric pile-based UPS system, which comprises a mains supply monitoring unit, a mains supply module, a vanadium liquid electric pile, a standby energy storage module, a plurality of inverters, a rectifier module, a first switching module and a main control module, the mains supply monitoring unit is arranged on the mains supply module; the output end of the mains supply monitoring unit and the control end of the first switching module are respectively connected with the main control module; the output end of the mains supply module is connected with the first switching module; the output end of the vanadium liquid electric pile is connected with the input end of the first inverter, and the output end of the first inverter is connected with the first switching module; the output end of the standby energy storage module is connected with the input end of the second inverter, and the output end of the second inverter is connected with the first switching module; the output end of the first switching module is connected with a load; the output end of the commercial power module is connected with the charging end of the standby energy storage module through the rectification module. The utility model has the advantage that the reliability of the UPS system can be improved.

This invention discloses a method, apparatus, device, and storage medium for switching data channels in a purely optical DC current transformer, addressing the technical problem of poor data channel switching performance in purely optical DC current transformers. The invention includes: when the workstation's measurement point data selection mode is automatic, receiving primary channel information and hot standby channel information sent by preset measurement points; using the primary channel information and hot standby channel information to determine anomalies in the primary channel; when an anomaly is determined in the primary channel, switching any hot standby channel to the primary channel, and returning to the step of using the primary channel information and hot standby channel information to determine anomalies in the primary channel, until the primary channel is determined to be normal; when the automatic mode is determined to be ineffective or the workstation's measurement point data selection mode is manual, receiving a channel switching command sent by the land station via a submarine optical cable, extracting the target channel from the channel switching command, and switching the primary channel to the target channel.

The invention discloses a guard interval determination method and device, a terminal and a storage medium, and belongs to the technical field of communication, and the guard interval determination method comprises the steps that the terminal determines a target guard interval of two target detection reference signal resources; the terminal transmits two target sounding reference signals based on the sounding reference signal resources and the target guard interval; wherein the two target sounding reference signal resources are adjacent sounding reference signal resources on any two time domains in an antenna switching group; wherein one antenna switching group comprises all sounding reference signal resources used for detecting one piece of complete channel state information, and the resource types of all the sounding reference signal resources in the antenna switching group are the same.

The invention relates to a preparation method of an RC-IGBT device and the RC-IGBT device, and belongs to the technical field of semiconductors. Comprising the following steps: forming a gate electrode, an emitter and a diode anode of the RC-IGBT device on the surface of one side of an epitaxial layer; injecting protons into the surface of one side, far away from the gate electrode, the emitter and the diode anode, of the epitaxial layer to form a composite epitaxial layer; forming a first drift region on the surface of one side, far away from the gate electrode, the emitter and the diode anode, of the composite epitaxial layer; forming a second drift region on the surface of one side, away from the composite epitaxial layer, of the first drift region; and forming a collector electrode and a diode cathode of the RC-IGBT device on the surface of one side, far away from the first drift region, of the second drift region. The diode is constructed in the IGBT device in a proton injection mode, the reverse recovery performance of the diode can be improved without controlling the service life of a carrier, and the performance of the IGBT and the reverse recovery performance of the diode are both considered.

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

The utility model provides a control system and a photovoltaic panel cleaning robot system. The control system comprises a warning lamp module, a sensing signal acquisition module and a voice warning module, wherein the warning lamp module and the sensing signal acquisition module are arranged in a cleaning robot, and the voice warning module is arranged in remote control equipment. For any one of the ultrasonic sensing devices, the sensing signal acquisition module comprises a corresponding switch sub-module and a serial port conversion sub-module. The warning lamp module is electrically connected with the first control module and is used for receiving warning control information generated by the first control module according to the serial port signal; and the second control module establishes short-range communication connection with the first control module through the second communication module and the first communication module, and is used for receiving warning control information generated by the first control module according to the serial port signal. According to the control system, distance sensing, real-time multi-form warning and effective information transmission are provided, the effect of distance detection is brought into full play, and smooth proceeding of cleaning operation and equipment safety are effectively guaranteed.

The invention relates to the technical field of semiconductors, and discloses a semiconductor structure, a preparation method of the semiconductor structure and a double-gate semiconductor device.The semiconductor structure comprises a first substrate, a first dielectric layer, a device layer and a second dielectric layer which are stacked from bottom to top, and the device layer comprises a plurality of shallow trench isolation structures and active regions located between the shallow trench isolation structures; a source electrode contact layer and a drain electrode contact layer are formed in the active region; the front gate contact layer and the source contact layer are led out from the first dielectric layer to be connected with the metal interconnection layer, and the drain contact layer and the back gate contact layer are led out from the second dielectric layer to be connected with the metal interconnection layer; or, the front gate contact layer and the drain contact layer are led out from the first dielectric layer to be connected with the metal interconnection layer, and the source contact layer and the back gate contact layer are led out from the second dielectric layer to be connected with the metal interconnection layer. By introducing back engineering, plate capacitors are difficult to form between the grid electrode and the source electrode (or the drain electrode) and between the source electrode and the drain electrode, and stray capacitance is weakened.