15results about How to "Improve switching performance" patented technology

A handheld steam cleaning machine comprises a main machine shell which is provided with a handheld part and a steam outlet nozzle; a water inlet is formed in the upper end of the water tank; the lower end of the steam generator is provided with a water inlet, and the upper end is provided with a steam outlet; a water outlet of the water tank is connected and communicated with a water inlet of the steam generator through the water inlet pipeline; a steam outlet of the steam generator is connected and communicated with the steam outlet nozzle through the steam outlet pipeline; the electric on-off device is located in the main machine cavity and acts on the water inlet pipeline so as to block or connect the water inlet pipeline; the circuit board is electrically connected with the electric on-off device and the steam generator; and the switching mechanism is arranged on the handheld part and is in control connection with the circuit board. According to the scheme, the water tank and the steam generator are of a split structure, part of water is conveyed into the steam generator from the water tank to be heated and produce steam during use, the steam outlet heat efficiency is improved, and the heating time is shortened.

A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws0.5 / m2K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.

The invention discloses a volatile threshold switching device based on an atomic-scale geometric confinement layer and a preparation method thereof. The device comprises a substrate layer, a bottom electrode layer, a functional active layer, a geometric confinement layer and a top electrode layer which are stacked in sequence, the functional active layer is used for providing active metal ions to form conductive filaments; the functional active layer is made of a two-dimensional layered ferroelectric material; the geometric confinement layer is made of hexagonal boron nitride sheets, and the thickness range of the hexagonal boron nitride sheets is 1-5 hexagonal boron nitride atomic layers. According to the invention, the h-BN material with atomic-scale lattice defects is introduced as the geometric confinement layer, and the diameter of the conductive filament formed by copper ions in the functional active layer is physically limited by using the atomic-scale ion sieve effect of the h-BN material, so that the problem of failure caused by overgrowth of the filament in a traditional device is solved.

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.

The utility model provides an IGBT driving circuit based on a push-pull structure, and relates to the technical field of power electronic device driving, and the IGBT driving circuit comprises an optocoupler isolation module which is used for receiving a control signal and providing electrical isolation output; the push-pull driving module comprises an NPN type triode Q1 and a PNP type triode Q2 which are complementary and symmetrical; the push-pull driving module is configured as follows: when the optocoupler is conducted, Q1 is saturated and conducted, Q2 is cut off, and a driving current charges an IGBT grid electrode through R2; when the optocoupler is turned off, the Q2 is saturated and turned on, the Q1 is turned off, and the driving current flows through the R3 to discharge the grid electrode of the IGBT. Bidirectional driving current is provided through a push-pull structure, the charge charging and discharging speed of the IGBT grid electrode is increased, the switching loss is reduced, bidirectional driving current is provided through a switch-on resistor R2 and a switch-off resistor R3, the resistance value of the switch-on resistor R2 is selected to be small, the purpose of reducing switch-on loss Eon is achieved, the resistance value of the switch-off resistor R3 is selected to be large, and the purpose of reducing switch-off Vce is achieved.

The invention relates to the technical field of semiconductors, and discloses a double-gate two-dimensional transistor for multifunctional storage and logic calculation, which comprises a substrate, a floating gate layer, a tunneling layer, a channel layer, a top gate insulating layer, a bottom gate electrode, a top gate electrode, a source electrode and a drain electrode, the substrate is an N-type single-polished silicon oxide wafer, the floating gate layer is a graphene layer, the tunneling layer is a hexagonal boron nitride layer, the channel layer is a molybdenum disulfide layer, and the top gate insulating layer is a hexagonal boron nitride layer; the floating gate layer is arranged on the upper surface of the substrate, the tunneling layer covers the upper surface of the floating gate layer, the channel layer is arranged on the upper surface of the tunneling layer, and the top gate insulating layer covers the upper surface of the channel layer. By means of a heterogeneous stack structure of h-BN / MoS graphene and a double-gate independent regulation and control mechanism, single device integration of light perception, nonvolatile storage and logic operation is achieved, additional splicing links of sensing, storage and calculation units in a traditional system are omitted, and a hardware architecture is greatly simplified.

The utility model provides a high-sealing and large-rigidity deep well electromagnetic valve. The high-sealing and large-rigidity deep well electromagnetic valve comprises an electromagnetic coil assembly, a valve body, a movable iron core and a coil shell. The electromagnetic coil assembly comprises a metal framework, a medium inlet is formed in the upper end of the metal framework, and a pressure-resistant cavity communicated with the medium inlet is formed in the metal framework; the valve body is in threaded connection with the lower end of the metal framework, a valve port communicated with the pressure-resistant cavity is formed in one end of the valve body, a valve port sealing assembly is installed at the valve port, and the valve port sealing assembly is limited between the valve body and the metal framework; the movable iron core is slidably mounted in the pressure-resistant cavity, and a sealing cone used for opening and closing the valve port is arranged at the end, facing the valve port sealing assembly, of the movable iron core. The coil shell is sleeved outside the electromagnetic coil assembly, and the upper end and the lower end of the coil shell are respectively welded and fixed with the metal framework through welding parts; the high-sealing and large-rigidity deep well electromagnetic valve overcomes the defect that an existing small safety electromagnetic valve is not suitable for the depth of three kilometers.

The utility model discloses a new energy controller motor temperature sampling circuit, which is characterized by comprising a power supply filter circuit, a temperature signal sampling circuit, a drive control module and a signal conditioning and amplifying module, the power supply filter circuit is connected with the driving control module, the temperature sampling circuit is connected with the driving control module, and the driving control module is connected with the signal conditioning and amplifying module. The motor temperature sampling accuracy is improved, the motor temperature sampling is not easily influenced by the temperature, the motor temperature sampling reliability is effectively improved, and the motor is protected more timely.

The utility model belongs to the technical field of uninterruptible power supply equipment, and particularly relates to a vanadium liquid electric pile-based UPS system, which comprises a mains supply monitoring unit, a mains supply module, a vanadium liquid electric pile, a standby energy storage module, a plurality of inverters, a rectifier module, a first switching module and a main control module, the mains supply monitoring unit is arranged on the mains supply module; the output end of the mains supply monitoring unit and the control end of the first switching module are respectively connected with the main control module; the output end of the mains supply module is connected with the first switching module; the output end of the vanadium liquid electric pile is connected with the input end of the first inverter, and the output end of the first inverter is connected with the first switching module; the output end of the standby energy storage module is connected with the input end of the second inverter, and the output end of the second inverter is connected with the first switching module; the output end of the first switching module is connected with a load; the output end of the commercial power module is connected with the charging end of the standby energy storage module through the rectification module. The utility model has the advantage that the reliability of the UPS system can be improved.

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

The utility model provides a control system and a photovoltaic panel cleaning robot system. The control system comprises a warning lamp module, a sensing signal acquisition module and a voice warning module, wherein the warning lamp module and the sensing signal acquisition module are arranged in a cleaning robot, and the voice warning module is arranged in remote control equipment. For any one of the ultrasonic sensing devices, the sensing signal acquisition module comprises a corresponding switch sub-module and a serial port conversion sub-module. The warning lamp module is electrically connected with the first control module and is used for receiving warning control information generated by the first control module according to the serial port signal; and the second control module establishes short-range communication connection with the first control module through the second communication module and the first communication module, and is used for receiving warning control information generated by the first control module according to the serial port signal. According to the control system, distance sensing, real-time multi-form warning and effective information transmission are provided, the effect of distance detection is brought into full play, and smooth proceeding of cleaning operation and equipment safety are effectively guaranteed.

The invention relates to the technical field of semiconductors, and discloses a semiconductor structure, a preparation method of the semiconductor structure and a double-gate semiconductor device.The semiconductor structure comprises a first substrate, a first dielectric layer, a device layer and a second dielectric layer which are stacked from bottom to top, and the device layer comprises a plurality of shallow trench isolation structures and active regions located between the shallow trench isolation structures; a source electrode contact layer and a drain electrode contact layer are formed in the active region; the front gate contact layer and the source contact layer are led out from the first dielectric layer to be connected with the metal interconnection layer, and the drain contact layer and the back gate contact layer are led out from the second dielectric layer to be connected with the metal interconnection layer; or, the front gate contact layer and the drain contact layer are led out from the first dielectric layer to be connected with the metal interconnection layer, and the source contact layer and the back gate contact layer are led out from the second dielectric layer to be connected with the metal interconnection layer. By introducing back engineering, plate capacitors are difficult to form between the grid electrode and the source electrode (or the drain electrode) and between the source electrode and the drain electrode, and stray capacitance is weakened.

The application relates to the technical field of energy storage, and discloses a hybrid energy storage system and method supporting mode switching, which comprises a data acquisition and communication module, an operation state analysis and mode decision module, a switching trajectory planning and cooperative control module, a safety monitoring and dynamic compensation module, a panoramic instruction integration and execution module, and a strategy self-learning and optimization module; target operation mode instructions are generated by inputting comprehensive operation state characteristic data of the system into a pre-trained mode research and judgment neural network model, combining a pre-set hysteresis comparison strategy and a minimum time interval constraint of mode switching, and realizing research and judgment on multiple operation modes such as power smoothing, peak clipping and valley filling, frequency modulation auxiliary services, so that frequent mode switching caused by state fluctuations is avoided; characteristic data, control sequences and safety evaluation data of the whole switching process are recorded to form a history library, and the optimization of the switching strategy is realized.

The application provides a method, device, storage medium and program product for improving RDMA dual-card switching efficiency, and belongs to the technical field of computer networks, and comprises the following steps: intercepting RDMA calling of an application program through a self-provided RDMA function library of an intermediate library; when the RDMA calling is intercepted, responding to the RDMA calling through the self-provided RDMA function library to perform RDMA communication, mapping resources required by the RDMA communication into resources of the intermediate library so that the application program directly accesses the resources of the intermediate library; standby resource preparation and pre-association; monitoring changes of RDMA network cards through the intermediate library, and when a failure of a main RDMA network card is monitored, the next step is entered; a failure signal and complete association of the standby resource; after the complete association is successfully completed, the resources of the intermediate library of the associated main RDMA network card are switched to the associated standby RDMA network card to continue the RDMA communication. The method further reduces the RDMA network card failure switching time.

The application discloses a GOA circuit and a driving method thereof, a display panel and a display device, and relates to the technical field of display. The circuit comprises a stage transmission module integrated with a stage transmission transistor. The drain of the stage transmission transistor is electrically connected with a first node. The source of the stage transmission transistor is electrically connected with a second node. The gate control end of an output module is electrically connected with the second node. The two side transmission ends of a potential control module are respectively electrically connected with the first node and a low potential line. The high potential end of the potential control module is electrically connected with a high potential line. The potential control module is used for transmitting the high potential signal of the high potential line to the first node in the stage transmission stage, so that the stage transmission transistor transmits the high potential signal to the output module through the second node. After the stage transmission is completed, the low potential signal of the low potential line is transmitted to the first node, so that the potential of the second node, to which the source of the stage transmission transistor is electrically connected, is continuously pulled down. The threshold voltage drift of the stage transmission transistor caused by voltage imbalance is eliminated, so that the display quality is improved.