495results about How to "Improve switching performance" patented technology

The present invention provides a data processing apparatus and method for managing access to a memory within the data processing apparatus. The data processing apparatus comprises a processor operable in a plurality of modes and a plurality of domains, said plurality of domains comprising a secure domain and a non-secure domain, said plurality of modes including at least one non-secure mode being a mode in the non-secure domain and at least one secure mode being a mode in the secure domain, said processor being operable such that when executing a program in a secure mode said program has access to secure data which is not accessible when said processor is operating in a non-secure mode. Further, a memory is provided for storing data required by the processor, and consists of secure memory for storing secure data and non-secure memory for storing non-secure data. The memory further contains a non-secure table and a secure table, the non-secure table being within the non-secure memory and arranged to contain for each of a number of first memory regions an associated descriptor, and the secure table being within the secure memory and arranged to contain for each of a number of second memory regions an associated descriptor. When access to an item of data in the memory is required by the processor, the processor issues a memory access request, and a memory management unit is provided to perform one or more predetermined access control functions to control issuance of the memory access request to the memory. The memory management unit comprises an internal storage unit operable to store descriptors retrieved by the memory management unit from either the non-secure table or the secure table, and in accordance with the present invention the internal storage unit comprises a flag associated with each descriptor stored within the internal storage unit to identify whether that descriptor is from the non-secure table or the secure table. By this approach, when the processor is operating in a non-secure mode, the memory management unit is operable to perform the predetermined access control functions for the memory access request with reference to access control information derived from the descriptors in the internal storage unit retrieved from the non-secure table. In contrast, when the processor is operating in a secure mode, the memory management unit is operable to perform the predetermined access control functions for the memory access request with reference to access control information derived from the descriptors in the internal storage unit retrieved from the secure table. This approach enables different descriptors to be used for the control of accesses to memory in either the secure domain or the non-secure domain, whilst enabling such different descriptors to co-exist within the memory management unit's internal storage unit, thereby avoiding the requirement to flush the contents of such an internal storage unit when the operation of the processor changes from the secure domain to the non-secure domain, or vice versa.

There is provided an electro-optical component comprising (a) a substrate, (b) a phase-variable element carried on the substrate, (c) a memory carried on the substrate for storing data representative of a phase state for the phase-variable element; and (d) a controller carried on the substrate, for utilizing the data and setting the phase state for the element. There is also provided an electro-optical component comprising (a) a substrate, (b) a phase-variable element carried on the substrate, and (c) a circuit carried on the substrate for computing and applying a phase state for the phase-variable element.

A semiconductor device includes a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type formed thereon. The semiconductor device also includes a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type and a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type. Each of the pair of trenches consists essentially of a dielectric material disposed therein and a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device. The semiconductor device further includes a control gate coupled to the semiconductor layer of the second conductivity type and a source region coupled to the semiconductor layer of the second conductivity type.

A LDMOS transistor comprises a trench formed through the epitaxial layer at least to the top surface of the substrate, the trench having a bottom surface and a sidewall contacting the source region and the portion of the channel region extending under the source region. A first insulating layer is formed over the upper surface and sidewall surfaces of the conductive gate. A continuous layer of conductive material forming a source contact and a gate shield electrode is formed along the bottom surface and the sidewall of the trench and over the first insulating layer to cover the top and sidewall surfaces of the conductive gate. A second insulating layer is formed over an active area of the transistor, including over the continuous layer of conductive material and filling the trench. A drain electrode can extend over the second insulating layer to substantially cover the active area.

This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate. At least one active cell further includes a trenched source contact opened between the trenches wherein the trenched source contact opened through a source region into a body region for electrically connecting the source region to a source metal disposed on top of an insulation layer wherein a trench bottom surface of the trenched source contact further covered with a conductive material to function as an integrated Schottky barrier diode in said active cell. A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.

An apparatus and method for providing handover support information in a mobile communication system are provided. A method for an Base Station (BS) to provide information necessary for measurement report trigger performance to a Mobile Station (MS) after the MS determines neighboring BSs in a mobile communication system includes, in a case where the MS is an active mode MS, providing a Time To Trigger (TTT) independently by a specific neighboring BS to the active mode MS and, in a case where the MS is an idle mode MS, providing a reselection time period (Treselection) independently by the specific neighboring BS to the idle mode MS.

The invention discloses a system and a method of multi-standard base station interconnection, wherein, multi-standard base stations are connected by means of uniform interface units which provide basic physical transport bearing and uniform transport protocol stacks, namely, uniform logic interfaces, which are used for transporting high-level application protocols to support the information interaction among multi-standard base stations, even among base station child nodes inside each multi-standard base station, such as load information, resource using information, interference information, switch process signaling messages, data forwarding and so on. The high-level application protocols born in the uniform transport protocol stacks are primarily user plane protocols and control plane protocols. The realizing function of the interface units is also provided among all the base station child nodes inside the multi-standard base stations. As the interface units which are internally provided by the multi-standard base stations adopt uniform transport protocol stacks, the system performance can be radically improved if similar uniform logic interfaces are provided among the multi-standard base stations.

The invention discloses a switching method, which comprises that: when sending a switching instruction to a mobile terminal, a service base station continues to allocate an uplink transmission resource and a downlink transmission resource for the mobile terminal, so that after receiving the switching instruction, the mobile terminal can continue to maintain the data transmission with the service base station, and simultaneously execute the random access process to a target base station so as to acquire the uplink synchronization information of the target base station. The invention also discloses a mobile terminal and a base station. Through the switching method of the invention, the switching interruption time in the switching process can be shortened greatly, and the switching performance is improved.

A LDMOS transistor comprises a trench formed through the epitaxial layer at least to the top surface of the substrate, the trench having a bottom surface and a sidewall contacting the source region and the portion of the channel region extending under the source region. A first insulating layer is formed over the upper surface and sidewall surfaces of the conductive gate. A continuous layer of conductive material forming a source contact and a gate shield electrode is formed along the bottom surface and the sidewall of the trench and over the first insulating layer to cover the top and sidewall surfaces of the conductive gate. A second insulating layer is formed over an active area of the transistor, including over the continuous layer of conductive material and filling the trench. A drain electrode can extend over the second insulating layer to substantially cover the active area.

The invention provides a switching method in a long term evolution (LTE) communication system facing a high speed railway. The switching method is characterized in that: a source base station determines whether switching is needed according to a headstock antenna measuring report sent by a vehicle relay station; if the switching is needed, the vehicle relay station controls the headstock antenna to access to a target base station and simultaneously a tailstock antenna maintains connection with the source base station; when the tailstock antenna satisfies a switching condition, the vehicle relay station controls the tailstock antenna to access to the target base station according to the resource applied by headstock antenna in the target base station. By using the method, a large amount of users can not generate switching simultaneously. Through using a bicasting mechanism in a switching problem, switching delay can be reduced and a service quality during the switching can be guaranteed.

This invention discloses configurations and methods to manufacture lateral power device including a super junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.

A spectrum analyzer is provided that includes components to achieve from below 9 kHz to above 20 GHz operation range while remaining hand-held. Components of the spectrum analyzer include an integrated precision stand-alone step attenuator that does not rely on printed circuit board (PCB) mounted circuit elements within the signal path. Further, a PIN diplexing switch separates signals into different base-band and highband paths. The baseband path includes a pre-amplifier for low frequency signals, while the higher frequency bands may not necessarily include a pre-amplifier. The baseband path further provides improved broadband termination of its 1st mixer IF port by incorporating a new quadrature-coupled directional (QCD) filter that includes a ring resonator. An inexpensive air dielectric multi-cavity baseband filter is also used to suppress 2nd mixer IF images. The highband path incorporates multi-throw MMIC PIN diode switches to selectively filter different bands of input signals. At least three total 1st mixers are used to increase operation bandwidth. A phase locked loop providing a 1st LO to the 1st mixers is created that uses a divide-by-two frequency divider in cascade with a sampler-type frequency downconverter. The output of the 1st LO is frequency doubled and filtered to increase the frequency range of the highband signal path.

A packet switch for switching cells comprising fixed-size data packets. The packet switch comprises: 1) N input ports for receiving and storing cells in input queues; 2) N output ports for receiving and storing cells from the N input ports in output queues; 3) a switch fabric for transferring the cells from the N input ports to the N output ports, the switch fabric comprising an internally buffered crossbar having N×N internal buffers, wherein each internal buffer is associated with a crosspoint of one of the N input ports and one of the N output ports; and 4) a scheduling controller for selecting a first one of a plurality of queued head-of-line (HOL) cells from the input queues to be transmitted to a first one of the N×N internal buffers according to a fair queuing algorithm in which each of the queued HOL cells is allocated a weight of Rij and wherein the scheduling controller selects a first one of a plurality of HOL cells buffered in a second one of the N×N internal buffers to be transmitted to a first one of the output queues according to a fair queuing algorithm in which each of the internally buffered HOL cells is allocated a weight of Rij.

The invention discloses a method and system for ensuring streaming media service quality. The method comprises the steps of monitoring the performance of a current network and triggering switch when monitoring that the performance of the current network is insufficient to meet the demands on the service quality of steaming media service; determining a target network, notifying a mobile node aboutthe relevant information for switching the target network, and sending service quality parameter information of the steaming media service of the mobile node to a target service quality proxy functionmodule in a target network node from an original service quality proxy function module in the original access network node; using the target service quality proxy function module in the target network node for establishing service quality mapping; and adopting different switch strategies according to different types of the mobile nodes: adopting a synchronous algorithm for carrying out data transmission when the mobile node is dual interfaces and adopting the switch strategy based on cache when the mobile node is a single interface. The method and the system can avoid the problem of low datatransmission efficiency due to the use of dual network interface cards in the prior art, lead a plurality of access modes to work cooperatively and realize seamless switch.

Embodiments of the invention provide a method and a system for switching an OTN signal using the SDH. The system includes a system clock unit for providing a system clock signal and a frame header indication signal, a cross-connection unit for performing signal cross-connection at a uniform level of synchronous transfer mode rate, and an OTN signal interface processing unit for mapping, based on the system clock signal and frame header indication signal provided by the system clock unit, an OTN signal received from the circuit side into a synchronous transfer mode bus to be sent to the cross-connection unit, and de-mapping a signal output by the cross-connection unit through the synchronous transfer mode bus to an OTN signal to be output to the circuit side. An OTN signal may be switched in the SDH and the service interworking between an SDH network and an OTN may be achieved.

This invention discloses configurations and methods to manufacture lateral power device including a super-junction structure with an avalanche clamp diode formed between the drain and the gate. The lateral super-junction structure reduces on-resistance, while the structural enhancements, including an avalanche clamping diode and an N buffer region, increase the breakdown voltage between substrate and drain and improve unclamped inductive switching (UIS) performance.

This invention generally relates to a liquid crystal device, and more particularly to such a device in the form of a liquid crystal cell such as for a display device, and further relates to a display device having the liquid crystal device, an optical waveguide device comprising the liquid crystal device, a Variable Optical Attenuator comprising the liquid crystal device, an optical switch comprising the liquid crystal device, a method of controlling transmission of polarised light, and to a further liquid crystal device. A liquid crystal device for controlling transmission of polarised light, comprising: chiral nematic liquid crystal having a helical arrangement of liquid crystal molecules in the absence of an electric field; and at least two electrodes for applying an electric field having a component normal to the helical axis of the chiral nematic liquid crystal, wherein the chiral nematic liquid crystal has negative dielectric anisotropy.

A system and a method are disclosed for controlling overshoot and undershoot in a switching regulator circuit. A first comparator circuit for controlling an undershoot of an output voltage of the switching regulator circuit is provided that that detects an occurrence of an undershoot of the output voltage of the switching regulator circuit and activates a first current source to pull up the output voltage of the switching regulator circuit. A second comparator circuit for controlling an overshoot of an output voltage of the switching regulator circuit is provided that detects an occurrence of an overshoot of the output voltage of the switching regulator circuit and activates a second current source to pull down the output voltage of the switching regulator circuit.

The invention relates to a universal servocontrol platform device for a motor-operating mechanism of a high-voltage switch apparatus and a control method; the device comprises an operating mechanism, a main loop and a control loop, wherein, the input terminal of a signal pretreatment circuit in the control loop is connected with a voltage mutual inductor and a current mutual inductor, for measuring the voltage and the current of a power network. The control method for the device comprises the step of calculating optimal contact speed via values of the voltage and the current acquired by the power network to control the operation of the contact. The invention has the advantage that the values of the voltage and the current of the power network are used for calculating an optical speed curve in a DSP chip, a switch on / off speed is compared with the optical speed curve while being regulated and controlled in order to regulate the on / off speed for minimizing an impact on the switch, optimizing the speed, reducing the generation of electric arcs, decreasing mechanical abrasion, promoting the switching effect and saving electric power. Meanwhile, a variety of operating mechanisms can be replaced mutually on the inventive operating platform, thus saving the manufacturing cost, simplifying the operation and saving labor force and material resource.

The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

The invention relates to a fast recovery diode (FRD) chip and a production process thereof. A diode with a P+NN+ structure is produced by adopting the process steps of diffusion pretreatment, double diffusion of a liquid source, back thinning, oxidization, platinum diffusion, photoetching, mesa etching, electrophoresis, sintering, scribing and the like. In the chip production process, a method of carrying out deep junction diffusion by carrying a liquid phosphorous source is adopted, so that the flatness of a diffusion junction is improved and the homogeneity and the stability of a breakdown voltage are strengthened; a method of reducing the concentration of a boron diffusion source and improving the purity of the boron diffusion source is adopted, so that the surge resistance capacity of an FRD is improved; and an electrophoresis glassivation process is adopted, so that the voltage withstanding stability and reliability of a bidirectional voltage stabilizing diode are improved. In addition, the production process has the advantages that the reverse recovery time is shortened, the switching speed is improved, the voltage drop is reduced, the power consumption is reduced, the voltage withstanding stability is improved, and the reliability of the diode is improved.

The invention discloses an admission control method, an apparatus thereof and a system thereof. The method comprises the following steps: a target network side receives a switching request signaling sent by a source network side, wherein, the request signaling comprises attribute information of a terminal and a service quality parameter of a wireless access bearer; the target network side carries out admission control according to the attribute information and the service quality parameter. Through the method, the apparatus, and the system in the invention, switching capability of a network and stability of the network are raised.

The following description relates to an electrochromic device including a carbon-based material and a viologen-based compound, a method for producing the electrochromic device, and use thereof. There is provided the electrochromic device including an active layer arranged between a first electrode and a second electrode, in which the active layer includes a carbon-based material and a viologen-based compound, and the carbon-based material and the viologen-based compound are bonded to each other through a non-covalent interaction.

This invention discloses a drive circuit of 220V AC LED lamp including a commutating circuit, the AC side of which is serial to a step-down current-limiting circuit composed of inductance coils, the DC side is parallel with a filter circuit composed of capacitors, a voltage-limiting protection circuit composed of Zener diodes and a LED array. The commutating circuit is composed of diode commutating bridge. The LED array is composed of multiple serial LEDS or first of all, multiple LEDS are serial then parallel.

A memory unit having a spin torque memory cell with a ferromagnetic free layer, a ferromagnetic pinned layer and a spacer layer therebetween, with the free layer having a switchable magnetization orientation with a switching threshold. A DC current source is electrically connected to the spin torque memory cell to cause spin transfer torque in the free layer. An AC current source is electrically connected to the spin torque memory cell to produce an oscillatory polarized current capable of spin transfer torque via resonant coupling with the free layer.

A hetero-channel FinFET device provides enhanced switching performance over a FinFET device having a silicon channel, and is easier to integrate into a fabrication process than is a FinFET device having a germanium channel. A FinFET device featuring the heterogeneous Si / SiGe channel includes a fin having a central region made of silicon and sidewall regions made of SiGe. A hetero-channel pFET device in particular has higher carrier mobility and less gate-induced drain leakage current than either a silicon device or a SiGe device. The hetero-channel FinFET permits the SiGe portion of the channel to have a Ge concentration in the range of about 25-40% and permits the fin height to exceed 40 nm while remaining stable.

The invention relates to a fast recovery diode FRD chip and a production process for the same. The process comprises the following steps of: diffusion pre-treatment, boron source pre-deposition, boron source main diffusion, diffusion after-treatment, single-surface back grinding thinning, oxidation pre-treatment, oxidation, photoetching, single-surface oxide layer removal, phosphorus source pre-deposition, phosphorus diffusion, sand blasting, platinum diffusion, N + surface mesa etching, electrophoresis, sintering, oxide layer removal, nickel plating, gold plating and chip cutting, wherein the structure of the obtained chip is P+-N-N+ type. According to the process, the uniformity of the reverse recovery time of the fast recovery diode is improved and controllability is improved, meanwhile, voltage drop is reduced, leakage current is reduced, and voltage-proof stability is improved; the contradiction of mutual condition among the reverse voltage, the positive voltage, the reverse recovery time and the leakage current of the fast recovery diode is solved to enable the various parameters to achieve the optimal matching, thus improving the reliability and switching characteristic of the diode, and reducing power consumption. The fast recovery diode disclosed by the invention breaks through the technical bottleneck of the traditional fast recovery diodes.

The invention provides a handoff parameter self-optimization method in a mobile communication system. The method comprises the following steps of: 1) within a handoff performance statistic period T, detecting a late handoff, an early handoff, a handoff to a mistaken cell, a ping-pang handoff and a fast handoff between neighbor cells, and performing statistic of the occurrence times and the handoff times; 2) calculating values of five handoff key performance indicators (KPI) after finishing the statistic period timing; 3) comparing the statistic values of five handoff KPIs with the corresponding target value and judging whether the statistic values are in accordance with the adjustment condition of the handoff parameter, if so, shifting to step four, otherwise shifting to step one; 4) calculating the adjustment amount delta Hlate, ij, delta Tlate, ij, delta Hearly, wrong, ij, delta Tearly, wrong, ij, delta Hpingpang, fast, ij, delta Tpingpang, fast, ij of the handoff parameter Hysij and TTTij; 5) calculating values of the Hsyij and TTTij of the next statistic period; and 6) shifting to step one, performing the handoff performance statistic of the next period. The method enables thehandoff to adapt to the change of the network environment more flexibly, improves the handoff performance and reduces the manual intervention, thereby reducing the network operational expenses greatly.