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5151 results about "Central region" patented technology

Magnetic field permeable barrier for magnetic position measurement system

A magnetic field position and orientation measurement system contains, confines and re-directs the magnetic field from one or more transmitters such that the fields are attenuated in areas outside of the operating volume in areas where metallic objects are commonly found. A thin barrier made of a highly permeable material such as ferrite or mumetal is placed on top of a conductive plate. The thickness of the permeable layer is from 0.01 inches to 0.25 inches while the conductive plate, preferably made of an aluminum alloy, may preferably be from {fraction (3/16)} of an inch to ¼ inch in thickness. On top of the permeable barrier, a rhombic three axis transmitter is placed. In the preferred embodiment, the transmitter consists of a PC board carrying the transmitter. PC boards having thicknesses varying from 0.03125-0.125 inches may be employed. Thus, the entire "stack" including the transmitter, the permeable barrier and the conductive plate may only be from ½ inch to ⅝ of an inch in thickness. The permeable barrier may have a flat, planar configuration. Alternatively, it may be made to resemble, in cross-section, a cake pan having a flat central region with uplifted peripheral edges. Alternatively, the permeable barrier may have a generally flat configuration with peripheral edges that taper outwardly from the top surface thereof to the bottom surface thereof with the taper making an angle with the bottom surface in the range of, preferably, 30° to 85°.
Owner:ASCENSION TECH

Coil array autocalibration MR imaging

A magnetic resonance (MR) imaging apparatus and technique exploits spatial information inherent in a surface coil array to increase MR image acquisition speed, resolution and / or field of view. Magnetic resonance response signals are acquired simultaneously in the component coils of the array and, using an autocalibration procedure, are formed into two or more signals to fill a corresponding number of lines in the signal measurement data matrix. In a Fourier embodiment, lines of the k-space matrix required for image production are formed using a set of separate, preferably linear combinations of the component coil signals to substitute for spatial modulations normally produced by phase encoding gradients. One or a few additional gradients are applied to acquire autocalibration (ACS) signals extending elsewhere in the data space, and the measured signals are fitted to the ACS signals to develop weights or coefficients for filling additional lines of the matrix from each measurement set. The ACS lines may be taken offset from or in a different orientation than the measured signals, for example, between or across the measured lines. Furthermore, they may be acquired at different positions in k-space, may be performed at times before, during or after the principal imaging sequence, and may be selectively acquired to optimized the fitting for a particular tissue region or feature size. The in vivo fitting procedure is readily automated or implemented in hardware, and produces an enhancement of image speed and / or quality even in highly heterogeneous tissue. A dedicated coil assembly automatically performs the calibration procedure and applies it to measured lines to produce multiple correctly spaced output signals. One application of the internal calibration technique to a subencoding imaging process applies the ACS in the central region of a sparse set of measured signals to quickly form a full FOV low resolution image. The full FOV image is then used to determine coil sensitivity related information and dealias folded images produced from the sparse set.
Owner:BETH ISRAEL DEACONESS MEDICAL CENT INC

Method and system for adjusting settings with slider controls having variable sensitivity

Aspects for allowing adjustment of a setting via a slider bar displayed on a graphical user interface are provided. These aspects include providing a slider bar control button for the slider bar, and integrating fine and coarse adjustment control into the slider bar control button to allow precise manipulation of a value for the setting. The provision of a slider bar control button includes providing a thumbwheel control button with a central area for coarse adjustment control through repositioning of the thumbwheel control button, a top button substantially adjacent and above the central area for fine adjustment control to increase a setting value by a predetermined increment, and a bottom button substantially adjacent and below the central area for fine adjustment control to decrease a setting value by a predetermined increment. Alternatively, providing a slider bar control button includes providing a three section bar with a first section for coarse adjustment, a second section for fine adjustment up, and a third section for fine adjustment down. In yet another alternative, providing a slider bar control button includes providing a zoom control button that allows adjustment to a scale displayed for setting values and responds to separate selection interface means to increase and decrease the scale.
Owner:IBM CORP

Semiconductor device

A semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor pillar region of the first conductivity type provided on a major surface of the semiconductor layer; a second semiconductor pillar region of a second conductivity type provided adjacent to the first semiconductor pillar region on the major surface of the semiconductor layer, the second semiconductor pillar region forming a periodic arrangement structure substantially parallel to the major surface of the semiconductor layer together with the first semiconductor pillar region; a first main electrode; a first semiconductor region of the second conductivity type; a second semiconductor region of the first conductivity type; a second main electrode; a control electrode; and a high-resistance semiconductor layer provided on the semiconductor layer in an edge termination section surrounding the first semiconductor pillar region and the second semiconductor pillar region. The high-resistance semiconductor layer has a lower dopant concentration than the first semiconductor pillar region. A boundary region is provided between a device central region and the edge termination section. The first semiconductor pillar region and the second semiconductor pillar region adjacent to the high-resistance semiconductor layer in the boundary region have a depth decreasing stepwise toward the edge termination section.
Owner:KK TOSHIBA
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