952results about How to "Uniform surface" patented technology

There is disclosed a plasma reactor for processing a semiconductor workpiece such as a wafer, including a chamber having an overhead ceiling with a three-dimensional shape such as a hemisphere or dome. The reactor further includes an inductive antenna over the ceiling which may be conformal or nonconformal in shape with the ceiling. The ceiling may be a semiconductor material so that it can function as both a window for the inductive field of the antenna as well as an electrode which can be grounded, or to which RF power may be applied or which may be allowed to float electrically. The reactor includes various features which allow the radial distribution of the plasma ion density across the wafer surface to be adjusted to an optimum distribution for processing uniformity across the wafer surface.

A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

A plasma reactor for processing a workpiece includes a reactor enclosure defining a processing chamber, a base within the chamber for supporting the workpiece during processing thereof, a semiconductor window electrode overlying the base, a gas inlet system for admitting a plasma precursor gas into the chamber, an electrical terminal coupled to the semiconductor window electrode, an inductive antenna adjacent one side of the semiconductor window electrode opposite the base for coupling power into the interior of said chamber through the semiconductor window electrode.

The invention discloses a method for preparing a graphite alkyne film. The method comprises that: a copper sheet or any one substrate the surface of which is covered with a copper film layer is used as a substrate; 6-alkynyl-benzene is subjected to coupling reaction in a solvent under the catalytic action of the copper to obtain the graphite alkyne film on the surface of the substrate. The method for preparing the graphite alkyne film, which is provided by the invention, has simple and convenient process, and can carry out large-scale preparation of the graphite alkyne film on the surface of the copper sheet or the substrate any surface of which is covered with the copper. The electrical conductivity of the graphite alkyne film is 2.516*10-4S/m. The film has uniform surface, can exist stably in the air, is a semiconductor with similar performances with silicon, and has potential application prospect in the fields of catalysis, electron, semiconductor, energy, material and the like.

A magnetic recording medium is formed with a distribution of low coercivity regions functioning as a transition pattern for servo information capable of being sensed by a read/write head by exposing a masked magnetic layer to ions to change the coercivity of the exposed magnetic layer without substantially affecting the topography of the magnetic layer.

Embodiments of the present invention include forming a series of substantially radially extending low coercivity regions used to divide the magnetic layer into a plurality of sectors comprising substantially concentric circumferentially extending data tracks by exposing a masked magnetic layer having a high coercivity, i.e. from about 2000 Oe to about 10000 Oe, to one or more heavy atom ion bombardments of gaseous ions, e.g. argon ions, at a dose of about 1×10¹³ atoms/cm² to about 9×10¹⁵ atoms/cm² having an implantation energy of about 10 KeV to about 50 KeV.

Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m³ to 1200 kg/m³.

There is provided an EPIR device which is excellent in mass productivity and high in practical utility.

The EPIR device includes a lower electrode layer, a CMR thin film layer and an upper electrode layer which are laminated in this order on any of various substrates. A Pt polycrystal thin film 10 forming the lower electrode layer includes columnar Pt crystal grains 10A, 10B, 10C, . . . and over 90% of these crystal grains is oriented to a (1 1 1) face. Columnar PCMO crystal grain groups 20A, 20B, 20C, . . . are respectively locally grown epitaxially on the respective outermost surfaces of the Pt crystal grains 10A, 10B, 10C, Then, the crystal faces of the crystal grains included in the PCMO crystal grain groups 20A, 20B, 20C, . . . and vertical in the substrate surface normal direction are any one of (1 0 0)_p, (1 1 0)_p and (1 1 1)_p planes.

A surface protection technology of neodymium-ferrous-boron permanent magnetic material is carried out by grinding for neodymium-ferrous-boron permanent magnetic material, degreasing while removing oil, removing rust while acid cleaning, activating acid liquid, putting it into black liquid or blue liquid, chemically coating and forming into blue-black or dark blue protection film. It has excellent combination and anti-corrosion performances.

An head restraint with an insert on seats in motor vehicles whereby said head restraint controls occupant's head acceleration and reduces neck loading in cases of impact. This head restraint comprises a post of any shape inserted into a seatback, foam of a desired thickness, an insert sized to cover a majority of the surface area on the front face and top of said head restraint, and a trim cover. Alternatively, the head restraint may be of integral design without posts. The insert is meant to float within foam in the head restraint and one can use clips or locating pins during manufacturing to obtain desired floating effect.

This invention relates to a gas diffusion layer used in proton exchange film fuel cells and its preparation method, in which, the gas diffusion layer includes a multihole supporting layer and a microhole layer, the multihole supporting layer is a net and porous structure, the microhole layer is composited on the surface of the porous supporting layer closing to the catalyzed layer and covers the surface of the large hole and fiber dense region of the supporting layer uniformly but not penerates into the inside of the supporting layer, which applies a drying method to prepare a gas diffusion layer used in proton exchange membrane fuel cells, and polymr 1 and 2 containing FI is either a same kind or different, and the hydrophile/hydrophobic degree of the two layers is adjustable, so the gas diffusion layer structure is matched with the running condition of the fuel cell and discharges water more easily.

The present invention is directed to a golf club head with an improved striking surface. Grooves are machined into the strike surface with tight tolerances. The grooves have sharp edges, radiused ends, and a draft angle between about 2° and 12°. The striking face is machined such that it has a uniform texture with a roughness of more than 40 Ra. The grooves may contain a plurality of portions, including a radiused or angled portion, a portion having substantially parallel walls, a portion having a v-shape, and a curved portion. The grooves may also be characterized by various dimensions, including draft angle, inclusive side wall angle, width, depth, cross-sectional area, spacing, and pitch ratio. Preferred values for these dimensions are provided. A golf club head having a variety of groove types and a set of golf clubs with grooves varying among the individual clubs of the set are also disclosed.

The present invention relates to directional nanometer zinc oxide stick or linear film and its preparation process, and belongs to the field of low-dimensional nanometer film material technology. The present invention adopts hydrothermal deposition process, in which zinc salt solution in molar concentration 1-25 mM and amine surfactant solution are mixed homogeneously and set inside stainless steel reactor with PTFE lining, substrate of glass, polymer, inorganic metal, non-metal or other material and with directional texture ZnO crystal seed is set inside the lining, so as to react at 50-150 deg.c for 1-6 hr. After cooling naturally, directionally grown and high crystallized ZnO nanometer stick array film or nanometer stick of diameter 10-500 nm may be form. The process has low synthesis temperature and easy control, and the grown ZnO film is well directional. The present invention is suitable for industrial production of directional nanometer ZnO stick or film.

A self-supported III-V nitride semiconductor substrate having a substantially uniform carrier concentration distribution in a surface layer existing from a top surface to a depth of at least 10 μm is produced by growing a III-V nitride semiconductor crystal while forming a plurality of projections on a crystal growth interface at the initial or intermediate stage of crystal growth; conducting the crystal growth until recesses between the projections are buried, so that the crystal growth interface becomes flat; and continuing the crystal growth to a thickness of 10 μm or more while keeping the crystal growth interface flat.

Provided are materials and methods for the chemical mechanical planarization of material layers such as oxide or metal formed on semiconductor substrates during the manufacture of semiconductor devices using a fixed abrasive planarization pad having an open cell foam structure from which free abrasive particles are produced by conditioning and combined with a carrier liquid to form an in situ slurry on the polishing surface of the planarization pad that, in combination with relative motion between the semiconductor substrate and the planarization pad, tends to remove the material layer from the surface of the semiconductor substrate. Depending on the composition of the material layer, the rate of material removal from the semiconductor substrate may be controlled by manipulating the pH or the oxidizer content of the carrier liquid.

One of factors that increase the contact resistance at the interface between a first semiconductor layer where a channel is formed and source and drain electrode layers is a film with high electric resistance formed by dust or impurity contamination of a surface of a metal material serving as the source and drain electrode layers. As a solution, a first protective layer and a second protective layer including a second semiconductor having a conductivity that is less than or equal to that of the first semiconductor layer is stacked successively over source and drain electrode layers without exposed to air, the stack of films is used for the source and drain electrode layers.