5results about How to "Uniform surface topography" patented technology

A method for manufacturing high-strength, hydrogen-embrittlement-resistant bolts based on microsphere shot peening, and the bolts themselves, are disclosed. The manufacturing method includes: S1, cold heading and thread rolling of alloy structural steel billets to obtain bolt forming parts; S2, surface cleaning of the bolt forming parts, followed by overall surface peening with microspheres driven by high-pressure air; after overall peening, targeted strengthening peening treatment is performed on stress concentration areas such as thread roots, undercut grooves, and flange transition corners to obtain reinforced bolt parts; S3, the reinforced bolt parts are cleaned, dried, and phosphated to obtain finished bolt parts. This design, through a "overall + targeted" composite microsphere shot peening strategy, introduces a uniform residual compressive stress field and a micron-level fine-grained plastic deformation layer on the bolt surface, forming a thicker strengthening layer in stress concentration areas, significantly improving the fatigue strength and delayed fracture resistance of high-strength bolts, while ensuring uniform surface roughness and stable assembly friction coefficient.

The invention provides an anti-oxidation coating for the surface of nickel-iron-based alloy, which is prepared by the following method, with nickel-iron-based alloy as substrate, and a lanthanum zirconate anti-oxidation coating is deposited on the substrate surface using a pulsed laser deposition method; during the pulsed laser deposition process, the substrate temperature is 550-800°C, the laser energy is 200-400J, the pulse frequency is 2-6Hz, the spacing between the lanthanum zirconate target and the substrate is 4-5cm, and a mixed atmosphere of oxygen and an inert gas with a volume ratio of 4-6:1 is used as a protective atmosphere. The obtained lanthanum zirconate anti-oxidation coating not only has good interface bonding with the nickel-iron-based high-temperature alloy, but also has good anti-oxidation performance under a saturated water vapor environment, and can achieve the purpose of alloy protection without affecting the mechanical properties of the alloy.

The invention specifically discloses a preparation method of a perovskite crystalline silicon laminated solar cell crystalline silicon bottom cell and a cell, and relates to the technical field of solar cells. The method comprises the following steps: carrying out double-sided polishing on a silicon wafer, carrying out boron diffusion on the back surface, removing a front-surface BSG layer, preparing a tunneling silicon oxide layer and a phosphorus-doped poly silicon layer on the front surface, depositing a mask SiOx layer on the front surface, carrying out laser texturing, corroding to remove damage, removing a redundant layer, depositing a film layer on the back surface, printing an electrode, sintering and the like. According to the method, the poly-Si / SiO2 passivation contact structure is prepared on the polished surface, the mask SiOx layer is deposited on the surface of the poly-Si / SiO2 passivation contact structure, and the light trapping structure is prepared on the basis of the passivation contact structure through laser, so that the problems of poor passivation performance of the front surface of the TOPCON bottom cell, contradiction between parasitic absorption and superposition of the light trapping structure and passivation and perovskite and the like are effectively solved; therefore, the perovskite laminated solar cell has important significance in the technical field of perovskite laminated solar cells.

The invention belongs to the technical field of electro-catalytic materials, and discloses a water-corrugation-shaped polyoxosulfide self-supporting electrode and a preparation method and application of the water-corrugation-shaped polyoxosulfide self-supporting electrode. Foamed nickel is used as a substrate of a self-supporting electrode, after the foamed nickel is pretreated, the pretreated foamed nickel is immersed in a precursor solution containing potassium ferricyanide, soluble vanadium salt and soluble cobalt salt, nickel on the surface of the foamed nickel is etched into nickel ions through room-temperature ultrasound, the nickel ions are released into the precursor solution, and the self-supporting electrode is obtained. A multi-metal cation precursor solution is obtained; the method comprises the following steps: adding a sulfur source into a precursor solution of multi-metal ions under an ultrasonic condition, so that ferric ions, nickel ions and cobalt ions in the precursor solution of the multi-metal ions react with the sulfur source to form a multi-metal sulfide, and meanwhile, doping oxygen ions combined with vanadium ions into the multi-metal sulfide to generate a precursor self-supporting electrode; and performing Joule heating on the precursor self-supporting electrode to obtain the multi-metal oxysulfide self-supporting electrode.

The application discloses a processing method of an upper dielectric layer of a lower electrode and a manufacturing process of the lower electrode. The processing method of the upper dielectric layer comprises the following steps: performing plasma spraying on a surface of an electrode layer to form the upper dielectric layer, wherein the spraying route of the plasma spraying is N scanning paths in S shape, and the starting points of the N scanning paths are staggered by a distance d in the same direction; sealing holes; grinding; and sand blasting, wherein the sand blasting route is the same as the spraying route. In the spraying and sand blasting processes of the upper dielectric layer, a plurality of offset paths are adopted, the uniformity of the superposition area is increased, the wave shape formed on the surface of the upper dielectric layer is reduced, and the uniformity of the surface of the upper dielectric layer is improved. Therefore, the non-uniform cooling of a glass substrate caused by the difference in the dry etching process is reduced, and the generation of mura in the dry etching process is reduced.