4450 results about "Rough surface" patented technology

The present invention provides an implant capable of being cellularized in treatment of an injured organ or tissue in organisms. The present inventors found that a biocompatible implant comprising a biological molecule and a support is capable of being cellularized. The implant can be used instead of conventional implants which essentially comprise cells. The present invention provides a biocompatible implant comprising A) a biological molecule and B) a support. The present invention also provides A) a first layer having a rough surface, B) a rough surface; B) a second layer having a strength which allows the support to resist in vivo shock. The first layer is attached to the second layer via at least one point.

A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves only a sub-monolayer of oxygen (typically 1×10¹³-1×10¹⁵/cm² of oxygen) at the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process in a chlorine containing environment which heats the silicon germanium, strained silicon, or thin silicon-on-insulator surface sufficiently to remove the remaining oxygen from the surface. By introducing a small amount of chlorine containing gases, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

A nitride light emitting device includes a substrate, a first nitride semiconductor stack formed above the substrate, the first nitride semiconductor stack having an epitaxial surface and a first rough surface, a distance from the epitaxial surface to the substrate being not less than a distance from the rough surface to the substrate, a nitride emitting layer formed on the epitaxial surface, and a second nitride semiconductor stack formed on the nitride emitting layer for promoting the efficiency of capturing light emitted from an LED.

Methods for making a material superwicking and/or superwetting (superhydrophyllic) involving creating one or more indentations in the surface of the material that have a micro-rough surface of protrusions, cavities, spheres, rods, or other irregularly shaped features having heights and/or widths on the order of 0.5 to 100 microns and the micro-rough surface having a nano-rough surface of protrusions, cavities, spheres, rods, and other irregularly shaped features having heights and/or widths on the order of 1 to 500 nanometers. Superwicking and/or superwetting materials having micro-rough and nano-rough surface indentations, including metals, glass, enamel, polymers, semiconductors, and others.

A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.

The invention relates to glass, ceramic and metal substrates with at least one self-cleaning surface, comprising a layer with a micro-rough surface structure which is arranged on the substrate and made at least partly hydrophobic. The layer contains a glass flux and structure-forming particles with a mean particle diameter within the 0.1 to 50 μm range; the glass flux and structure-forming particles are present in a volume ratio within the 0.1 to 5 range, and the micro-rough surface structure has a ratio of mean profile height to mean distance between adjacent profile tips within the 0.3 to 10 range.

To produce the subject of the invention the substrate is coated with a composition containing a glass flux and structure-forming particles, and the layer is burnt in and made hydrophobic.

The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves a first amount of oxygen (typically 1×10¹³-1×10¹⁵/cm² of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process which heats the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface sufficiently to remove additional oxygen from the surface and leave a second amount of oxygen, less than the first amount, on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The heating process leaves an amount of at least 5×10¹²/cm² of oxygen (typically, between approximately 1×10¹³/cm² and approximately 5×10¹³/cm² of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. By leaving a small amount of oxygen on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.

Processes for producing interbody spinal implants having a body with a top surface, a bottom surface, opposing lateral sides, opposing anterior and posterior portions, a substantially hollow center, and a single vertical aperture; and optionally, one or two integration plates affixed to the body. The processes include applying an additive process, a subtractive process, or both processes to at least one surface of the interbody spinal implant to form a roughened surface topography having a regular repeating pattern. The roughened surface topography is specifically designed to provide certain frictional characteristics, load dispersion, and to influence the biological responses that occur during bone healing and fusion.

An interbody spinal implant having at least three distinct surfaces including (1) at least one integration surface having a roughened surface topography including macro features, micro features, and nano features, without sharp teeth that risk damage to bone structures; (2) at least one graft contact surface having a coarse surface topography including micro features and nano features; and (3) at least one soft tissue surface having a substantially smooth surface including nano features. Also disclosed are processes of fabricating the different surface topographies, which may include separate macro processing, micro processing, and nano processing steps.

A top-emitting organic light-emitting diode (OLED) device, comprising: a substrate; an OLED comprising a reflective electrode formed on the substrate; one-or-more layers of organic light-emitting material formed over the reflective electrode; and a transparent electrode formed over the one-or-more layers of organic light-emitting material; a light-scattering layer having a rough surface formed over and in contact with the OLED, a cover affixed to the substrate forming a gap between the cover and the light scattering layer; and wherein the gap is a vacuum or the gap is filled with a relatively low-refractive index gas and the light-scattering layer comprises a plurality of relatively high-refractive index light-scattering transparent particles projecting into the gap without contacting the cover and further comprising an adhesive binder in contact with at least some of the light-scattering particles to adhere the light-scattering particles to the OLED.

Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The porous network in GaN shows nanostructures formed on the surface. Subsequent growth of InGaN shows that it is relaxed on these nanostructures as the area on which the growth takes place is very small. The strain relaxation favors higher indium incorporation. Besides, this porous network creates a relatively rough surface of GaN to modify the surface energy which can enhance the nucleation of impinging indium atoms thereby increasing indium incorporation. It shifts the luminescence from 445 nm for a conventionally grown InGaN structure to 575 nm and enhances the intensity by more than two-fold for the growth technique in the present invention under the same growth conditions. There is also a spectral broadening of the output extending from 480 nm to 720 nm.

Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer (30) so as to a main surface (20) of a substrate (2), a masking step of forming a protective film on the semiconductor layer (30), a semiconductor layer removal step of removing the protective film and the semiconductor layer (30) by laser irradiation to expose the substrate (2), a grinding step of reducing the thickness of the substrate (2), a polishing step of polishing the substrate (2), a laser processing step of providing processing marks to the inside of the substrate (2), a division step of creating a plurality of light-emitting devices (1) while forming a division surface of the substrate (2) to have a rough surface.

To provide a multilayer wiring substrate in which the connection reliability of via conductors is enhanced, via holes are formed in a resin interlayer insulation layer which isolates a lower conductor layer from an upper conductor layer, and via conductors are formed in the via holes for connecting the lower conductor layer and the upper conductor layer. The surface of the resin interlayer insulation layer is a rough surface, and the via holes open at the rough surface of the resin interlayer insulation layer. Stepped portions are formed in opening verge regions around the via holes such that the stepped portions are recessed from peripheral regions around the opening verge regions. The stepped portions are higher in surface roughness than the peripheral regions.

The invention belongs to the fabric water-repellent finishing and processing field, in particular relates a super hydrophobic cotton fabric and a preparation method thereof. The preparation method of the super hydrophobic cotton fabric is characterized in that the epoxy-functionalized modification is performed to the cotton fiber of fabric, then aminated nano-SiO2 and epoxy-functionalized nano-SiO2 are used to impregnate the cotton fabric in turn so as to increase the surface roughness of the fabric, finally a low-surface-energy material is adopted to perform hydrophobization treatment to the fabric; the contact angle between the prepared cotton fabric and water drops is more than 150 degrees; the method utilizes the covalent reaction of epoxy groups of cotton fabric, amino groups of nano-SiO2 and epoxy groups of nano-SiO2 to ensure the built rough surface to have good fastness; and the built surface has a large number of Si-OHs and epoxy groups so as to facilitate the chemical combination of the low-surface-energy material and the surface, thus the superhydrophobic property of the prepared fabric has excellent stability.

In some embodiments of the present invention, a strip of material is employed to assist in evacuating a storage bag. Although this venting strip can be used in vacuum sealing any type of plastic bag, in some preferred embodiments the venting strip is used in vacuum sealing storage bags having one or more heat sealable inner layers and one or more outer layers resistant to gas permeation. The venting strip can be apertured and/or can have a textured or rough surface that creates channels between the inside surface of the storage bag and the venting strip, thereby allowing air to exit from the interior of the storage bag. The venting strip can be made at least partially of heat-sealable material, and can melt with heat sealable inner layers of the storage bag when a vacuum sealer applies heat to seal the storage bag.

A surface finishing tool and a fabricating method for forming a pattern on a golf club head are provided. The surface finishing tool comprises a shank, a resilient cylinder, and a rubbing head. The shank has a center axis, and the resilient cylinder is disposed along the center axis and fixed on an end of the shank. The rubbing head has a rough surface and is disposed on the resilient cylinder. The fabricating method applies the surface finishing tool to form the pattern on the golf club head, wherein the surface finishing tool is driven to rotate along the center axis first. Then, the surface finishing tool is moved for keeping the rough surface of the rubbing head contacting with the golf club head, wherein the resilient cylinder is deformed along a profile of the golf club head as the rubbing head contacts with the golf club head.

A method for providing a superhydrophobic surface on a structure, for example aircraft wings, propellers and/or rotors, is set forth. The method includes applying a coating of hydrofluoric acid over a titanium substrate. A voltage is then applied across the titanium substrate so that current flows through the titanium substrate. The current flowing through the titanium substrate causes the hydrofluoric acid to react with the titanium substrate to anodize the titanium substrate. The anodization causes a nanoporous titanium oxide layer to grow across the titanium substrate. The titanium oxide layer includes a plurality of nano-tube structures that, once the remaining hydrofluoric acid is washed away, provide a microscopically rough surface on the titanium substrate. A conformal coating of a hydrophobic compound is then desposited on the microscopically rough surface to create a superhydrophobic surface. Thus, a substantially self-cleaning superhydrophobic surface is created on the titanium substrate, whereby, when exposed to ultraviolet light, the titanium oxide layer has a photocatalytic reaction with oxygen to oxidize any organic contaminants that may gather on the superhydrophobic surface.

A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

Crystalline spherical inhalation particles incorporating a combination of two or more different active ingredients and a process for the preparation thereof. The particles have a narrow particle size distribution, rough surfaces and improved stability. The inhalation particles of the invention are particularly useful in the administration of a combination medicament, e.g. a combination of an anti-inflammatory agent and a bronchodilator, by inhalation in the treatment of asthma and other respiratory disorders.