7 results about "Nanometer size" patented technology

The present invention belongs to the field of atomic precision machining and discloses a method for preparing an atomically sharp diamond edge, comprising the following steps: Step 1: determining the geometry of the atomically sharp diamond edge; Step 2: using a femtosecond laser to trim the diamond surface to a specific crystal orientation; Step 3: designing a clamping device for the atomically sharp diamond edge; Step 4: using a focused ion beam to prepare nanometer-sized diamond micropillars and transfer them to the edge clamping device; Step 5: using argon plasma polishing technology to achieve atomic-level flatness on the surface of the diamond nanopillars; Step 6: using X-Nano multi-degree-of-freedom nanomanipulation technology to achieve atomic-level cleavage of the diamond nanopillars; Step 7: using a spherical aberration electron microscope to characterize and verify the atomically sharp diamond edge. The present invention achieves the preparation of an atomically sharp diamond edge with an edge blunt radius through micro-nano machining and atomic-scale controllable cleavage methods.

The application discloses a hetero-epitaxial niobium pentoxide thin film and a preparation method and application thereof, and belongs to the technical field of thin film deposition. The preparation method comprises the following steps: placing a substrate and target material in a vacuum system, bombarding the target material through a pulse laser, and depositing an initial hetero-epitaxial niobium pentoxide thin film on the surface of the substrate; and performing annealing treatment on the initial hetero-epitaxial niobium pentoxide thin film to obtain the hetero-epitaxial niobium pentoxide thin film. The hetero-epitaxial niobium pentoxide thin film is grown by using a pulse laser deposition system, the deposition rate of the thin film is high, the repeatability is good, the prepared thin film can keep a high consistency in purity and a stoichiometric ratio with the target material, the process control can be performed on a nanometer scale, the thickness of the thin film can be adjusted to a nanometer level, the preparation method is simple, the target material can be reused, the growth parameters can be flexibly regulated, the growth state of the thin film can be monitored in real time, and a high-quality hetero-interface structure is obtained.

Method of measuring a dimension of a nanometer sized high aspect ratio structure of a sample using a scanning probe microscope, the nanometer sized high aspect ratio structure comprising a recess having a height dimension in a direction transverse to the surface and a lateral dimension in a direction parallel to the surface, wherein the height dimension is greater than the lateral dimension; wherein the method comprises the steps of: - scanning the surface of the sample in a scanning direction parallel to the surface by a probe including a probe tip attached to the scanning probe microscope, and lowering, during the step of scanning, the probe tip into the recess such as to determine the dimension of the nanometer sized high aspect ratio structure; - wherein the recess comprises a recess width between at least two opposing sidewalls in a direction parallel to the scanning direction; - wherein the probe tip, which is lowered into the recess, comprises a base, an apex at an end of the base arranged to interface with the surface of the sample, and a distancer, wherein said base extends parallel to a longitudinal axis of the probe tip and wherein the distancer extends from the base such as to extend radially outward for defining a width of the probe tip including the distancer; and - wherein the width of the probe tip is smaller than the recess width.

The present application relates to the field of high polymer nanomaterials, and particularly relates to an elastomer with nano-sized imprinting precision and a preparation method and application, a surface of the elastomer is an imprinting layer with nano-structure, the imprinting layer has imprinting structures with a minimum diameter of sub-10 nanometers and a length-diameter ratio of (3-100):1, a water contact angle of the imprinting layer is 70-140 DEG, the preparation method comprises synthesis of a dynamic unit, construction of a dynamic heterogeneous elastomer, nano-imprinting, introduction of a dynamic covalent bond and a crystalline phase into the dynamic heterogeneous elastomer, in the process of imprinting, the elastomer network enters nano-pores of a template and is fully filled, reassembled into a complete network structure, and the crystalline phase further limits resilience of the elastomer network to ensure fidelity of the imprinting structure, that is, the elastomer is prepared by translocation crystallization of the elastomer network in the nano-pores.

The invention discloses a method for simulating low-permeability reservoir pore structure design and manufacturing a micro-fluidic chip. The method comprises the following steps: extracting a pore structure by using a casting body sheet, an optical microscope and an SEM image; the pore structure is placed in Matlab and OpenFOAM to calculate and verify whether the pore size and permeability of the structure accord with the real condition of an oil reservoir, and then an overlay technology is utilized to manufacture a micro-fluidic chip, so that pores and fractures with different depths can be etched in the same micro-fluidic chip to simulate pores and fractures with different sizes in rocks. And the micro-sized and nano-sized pore cracks can be etched in the same micro-fluidic chip, so that the method has an important value for research on pore-sized CO2 oil displacement storage by using the micro-fluidic chip.

The application discloses a method for regulating the aperture of a solid-state nanopore array template, comprising the following steps: taking a metal target and a ceramic target as co-sputtering targets, magnetron sputtering co-depositing a metal nanowire array-ceramic composite material on a pretreated substrate, immersing in chemical etching liquid A for etching, then washing, immersing in chemical etching liquid B for etching at 15-35 DEG C for 1-15 min for aperture regulation, and washing to obtain the solid-state nanopore array template after aperture regulation; the diameter of the nanopore can be finely regulated to 0.1-1.2 nm. In the application, the solid-state nanopore array template is prepared by co-sputtering of the target material, and then the nanopore diameter is effectively and controllably regulated by using a Lewis acid or a Lewis acid base, so that the sub-nanometer size regulation is realized, and the method can be applied to the detection field of various biological macromolecules with similar sizes.