570 results about "Nanometer size" patented technology

The present invention provides methods, devices and device components for fabricating patterns on substrate surfaces, particularly patterns comprising structures having microsized and/or nanosized features of selected lengths in one, two or three dimensions. The present invention provides composite patterning devices comprising a plurality of polymer layers each having selected mechanical properties, such as Young's Modulus and flexural rigidity, selected physical dimensions, such as thickness, surface area and relief pattern dimensions, and selected thermal properties, such as coefficients of thermal expansion, to provide high resolution patterning on a variety of substrate surfaces and surface morphologies.

A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.

A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.

A packaging laminate having an integrated polyolefin layer is disclosed wherein the polyolefin is integrated with a nanometer size particle of clay. The nanometer size particles may have a thickness of 0.9 to 100 nanometers, and an aspect ratio of 100 to 2000. The clay particles compose only 0.1 to 10 weight percent of the polyolefin layer. The integrated polyolefin layer provides substantial barrier properties to the packaging laminate. The packaging laminate may be used for a pouch, a PET bottle, a parallelepiped container, a gable top carton, a blow moulded bottle, and other applicable containers for flowable foods such as juice, milk and cheese.

The invention discloses electric conductive silver paste and a manufacturing method of the electric conductive silver paste. The electric conductive silver paste comprises, by mass percentage, 35 - 65 % of micron-sized silver powder, 1-10 % of nanometer-sized silver powder of or 1-20 % of nanometer-sized silver and other metal alloy powder, and 1-10 % of an organic carrier; for ceramics, solar cell silver paste comprises 2-15 % of unleaded glass powder, each component is manufactured in parts, weighed, mixed and stirred or mixed and rapidly scattered, and ultrasonic-vibrated or fine adjusted of viscosity of solvent, and therefore the electric conductive silver paste is obtained. Due to the fact that the nanometer-sized silver powder or the nanometer-sized silver alloy powder is mixed with the micron-sized silver powder, intensity of conductivity and a circuit is improved, adhesive force of crushing resistance and a base plate is improved, at the same time unleaded slurry good in thixotropy, low in contacting resistance and low in piece-needed slurry amount replaces lead slurry materials, the electric conductive silver paste is used for manufacturing crystalline silicon solar cells, improves photoelectric conversion efficiency, accords with environmental-protection ideas, and can be produced in large scales continuously.

Transmission and reflection type holograms may be formed utilizing a novel polymer-dispersed liquid crystal (PDLC) material and its unique switching characteristics to form optical elements. Applications for these switchable holograms include communications switches and switchable transmission, and reflection red, green, and blue lenses. The PDLC material of the present invention offers all of the features of holographic photopolymers with the added advantage that the hologram can be switched on and off with the application of an electric field. The material is a mixture of a polymerizable monomer and liquid crystal, along with other ingredients, including a photoinitiator dye. Upon irradiation, the liquid crystal separates as a distinct phase of nanometer-size droplets aligned in periodic channels forming the hologram. The material is called a holographic polymer-dispersed liquid crystal (H-PDLC).

A cathode material has one of olivine and NASICON structures and includes micrometer-sized secondary particles having a particle size ranging from 1 to 50 μm. Each of the micrometer-sized secondary particles is composed of crystalline nanometer-sized primary particles of a metal compound having a particle size ranging from 10 to 500 nm.

An object of the invention is to execute an imprinting process at a higher speed and a higher accuracy, in an imprinting apparatus. In an imprinting apparatus for contacting and pressurizing a mold having a micro concavo-convex structure formed on a surface thereof to a substrate surface in order to form a micro and nanometer size structure on a substrate, a step of pressurizing the mold and the substrate and a step of peeling the mold from the substrate are constituted by independent units, the mold and the substrate are moved in a closely attached state at a time of moving from the pressurizing step to the peeling step, and preferably at least two sets of molds and substrates are processed by the different steps simultaneously or a temporarily overlapped manner.

Transmission and reflection type holograms may be formed utilizing a novel polymer-dispersed liquid crystal (PDLC) material and its unique switching characteristics to form optical elements. Applications for these switchable holograms include communications switches and switchable transmission, and reflection red, green, and blue lenses. The PDLC material of the present invention offers all of the features of holographic photopolymers with the added advantage that the hologram can be switched on and off with the application of an electric field. The material is a mixture of a polymerizable monomer and liquid crystal, along with other ingredients, including a photoinitiator dye. Upon irradiation, the liquid crystal separates as a distinct phase of nanometer-size droplets aligned in periodic channels forming the hologram. The material is called a holographic polymer-dispersed liquid crystal (H-PDLC).

A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.

The invention relates to a substrate (1) comprising at least a first (2) and a second (8) coating layer on one surface of the substrate, for nanoimprint lithography, said first coating layer (2) consisting of a positive resist and said second (8) coating layer consisting of a negative resist. The invention also relates to a process in connection with nanoimprint lithography on the substrate (1), a pattern (3) of nanometre size being impressed in a first stage into the second coating layer (8) by means of a template (610), following which the first coating layer (2), in a second stage, is exposed to a chiefly isotropic developing method on surfaces thereof that have been exposed in connection with said first stage, a method for developing and material for said first and second coating layers being selected so that the first coating layer (2) is developed more quickly than the second coating layer (8), so that an undercut profile is obtained in the coating layers.

There are provided mesoporous silica materials containing in their pores stabilized clusters of silicon atom, of size 2 nanometers or less, and capable of photoluminescence to emit fast photons. They are prepared by chemical vapor deposition of silicon or a silicon precursor such as disilane, under soft conditions such as temperature of 100-150 DEG C., into the mesopores of silicate films which have mesoporous channels prepared by growth of the films using a template to control their sizes, but without removing the template residues from the films prior to the chemical vapor deposition. The template residues serve to limit the size of the silicon clusters which conform. The use of the soft conditions on CVD retains the template residues in an intact, substantially unchanged form. The resultant films have clusters of silicon, of 2 nanometer size or less, anchored to the mesopores, and air stable, so that they can be used in optoelectronic devices in conjunction with standard silicon semiconductors.

In one aspect of the invention, a method of synthesizing a lithium metal phosphate composite usable for a lithium secondary battery includes the steps of forming a nanometer-size precursor comprising lithium source and metal phosphate nanoparticles having each nanoparticle at least partially coated a layer of carbon precursor, spray drying the nanometer-size precursor at a first desired temperature to form micron-size particles packed with the lithium metal phosphate precursor nanoparticles, and sintering the micron-size particles at a second desired temperature under an inert and/or reduction atmosphere to form a micron-size lithium metal phosphate composite.

A method for manufacturing carbon nanotubes with an integrally attached outer graphitic layer is disclosed. The graphitic layer improves the ability to handle and manipulate the nanometer size nanotube device in various applications, such as a probe tip in scanning probe microscopes and optical microscopes, or as an electron emitting device. A thermal chemical vapor deposition reactor is the preferred reaction vessel in which a transition metal catalyst with an inert gas, hydrogen gas and a carbon-containing gas mixture are heated at various temperatures in a range between 500° C. and 1000° C. with gases and temperatures being adjusted periodically during the reaction times required to grow the nanotube core and subsequently grow the desired outer graphitic layer.

A transistor of nanometer size is provided, which is capable of high-speed operation and operates at room temperatures by using carbon nanotubes for semiconductor devices. The transistor uses a carbon nanotube ring having semiconductor characteristics as a semiconductor material, or a carbon nanotube ring having conductivity or semiconductor characteristics as an electrode material.

The invention relates to a reunion-shaped phosphoric lithium iron positive material with a nanometer structure and a preparation method thereof, and belongs to the field of batteries. The positive material comprises the following elements: a lithium source, an iron source, a phosphor source, a high-priced doped element and carbon. The molar ratio of the lithium source, the iron source, the phosphor source is 1:1 to 1.5:1 to 2; the molar fraction in the doping amount of the high-priced doped element is 0.1 to 5 percent of Li or Fe. The preparation method comprises the following steps: preparing an initial precursor: dissolving the iron source and the phosphor source in pure water; and filtering, washing and obtaining the initial precursor; preparing nanometer powder colloid suspending liquid: spraying and drying the nanometer powder colloid suspending liquid to be prepared into nanometer reunion-shaped powder; carrying out high-temperature heat treatment to the reunion-shaped powder; quenching, drying and sieving the reunion-shaped powder; and then obtaining the nanometer phosphoric acid lithium iron positive material with the nanometer structure. The material prepared not only has the electrochemical performance in nanometer diameter material, but also has the advantages of high tap density and excellent processing performance in micron diameter material.

The invention provides a versatile technique for machining of nanometer-scale features using tightly-focused ultrashort laser pulses. By the invention, the size of features can be reduced far below the wavelength of light, thus enabling nanomachining of a wide range of materials. The features may be extremely small, of nanometer size, and are highly reproducible.

A shadow mask method to fabricate electrodes with nanometer scale separation utilizes nanotubes (NTs). Metal wires with gaps are made by incorporating multi-wall carbon nanotubes (MWNTs) or single-wall carbon nanotubes (SWNTs) (or bundles thereof) into a tri-layer electron beam lithography process. The simple, highly controllable, and scaleable method can be used to make gaps with widths between 1 and 100 nm. Electronic transport measurements performed on individual SWNTs bridge nanogaps smaller than 30 nm. Metallic SWNTs exhibit quantum dot behavior with an 80 meV charging energy and a 20 meV energy level splitting. Semiconducting SWNTs show an anomalous field effect transistor behavior.

This invention discloses a synthetic method of nanometer level mordenite. The procedures are that silica resource and aluminum resource are added into water solution of tetraethyl or four-propyl organic amine-group compound, addictives are organic weak acid and NaCl. Ageing 1-10 hours in greenhouse, then crystallize at 140-2000C for 15-30 hours, the pH value of reaction system is 8-13, then the nanometer level mordenite can be collected from the reactive product. The feature of this invention is that few organic ammonium ion is used as template agent, the silica resource is inexpensive silica flour, the aluminum source is sold sodium aluminate. The synthetic nanometer level mordenite has high crystallinity and low cost, it is convenient for industrial generation.

The invention relates to a method for preparing Bi2WO6 optical catalyst which can respond visible light. Wherein, said method comprises that (1), preparing the forward body with Bi2WO6 structure at nanometer size that mixing the reactants or adding surface activator (P123, PVP, CTAB), mixing uniformly; (2), under 120-240Deg. C, reacting the forward body in water heating condition for 4-24h, eccentrically separating the product, washing and drying at 30-150Deg. C, to obtain the powder; then sintering the powder at 300-750Deg. C for 1-10h, to obtain the final catalyst. The invention has low cost, while the inventive catalyst high tens time degrade efficiency than TiO2 (P25).