The application discloses a hetero-epitaxial
niobium pentoxide thin film and a preparation method and application thereof, and belongs to the technical field of thin film deposition. The preparation method comprises the following steps: placing a substrate and target material in a vacuum
system, bombarding the target material through a pulse
laser, and depositing an initial hetero-epitaxial
niobium pentoxide thin film on the surface of the substrate; and performing annealing treatment on the initial hetero-epitaxial
niobium pentoxide thin film to obtain the hetero-epitaxial
niobium pentoxide thin film. The hetero-epitaxial
niobium pentoxide thin film is grown by using a pulse
laser deposition
system, the
deposition rate of the thin film is high, the
repeatability is good, the prepared thin film can keep a high consistency in purity and a stoichiometric ratio with the target material, the
process control can be performed on a nanometer scale, the thickness of the thin film can be adjusted to a nanometer level, the preparation method is simple, the target material can be reused, the growth parameters can be flexibly regulated, the growth state of the thin film can be monitored in real time, and a high-quality hetero-interface structure is obtained.