A method of manufacturing a magnetoresistive-based device having magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer, including removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively; and removing the tunnel barrier layer, second magnetic materials layer, and second electrically conductive layer unprotected by the second hard mask to form a tunnel barrier, second magnetic materials, and a second electrode.