405 results about "Magnetoresistance" patented technology

The invention discloses a low-power-consumption winch sensor based on a tunneling magnetoresistance effect. The low-power-consumption winch sensor comprises a measurement module, a signal conversion unit, a shell, a mandrel, a magnetic rotary disc and a detection assembly. The magnetic turntable and the mandrel are connected and rotate synchronously, the detection assembly comprises a TMR sensing element and N magnets, and the magnetic turntable is provided with mounting blind holes for embedding the magnets; the TMR sensing element is arranged on the shell and comprises a mounting plate and two sensing units, the magnetic domain directions of the two sensing units are perpendicular to the rotation axis, magnetic resistance signals of the two sensing units are converted through the signal conversion unit and input into the measuring module, the horizontal distance between the centers of the two sensing units and the magnet and the rotation axis is R, and the center distance L of the two sensing units is smaller than R * sin (180 degrees / N); the sensor is based on the TMR tunneling magnetoresistance effect, is high in detection sensitivity and low in energy consumption, outputs square wave signals with phase differences, can be used for a measurement module to accurately analyze and calculate the rotating speed and the rotating direction of a winch roller, is simple in overall structure, small in radial size and easy to install, and the installation precision is controlled.

The invention discloses a high-efficiency TMR current sensor and a material fixing method thereof. The high-efficiency TMR current sensor comprises a magnetic core and a winding surrounding the magnetic core, the switch is connected in series with the winding; the magnetic core is made of permalloy materials. Performing multi-dimensional simulation analysis on the magnetic core and the state in the air gap of the magnetic core; determining the influence of each data of the magnetic core on the magnetic flux at the air gap; determining a preferred condition of the magnetic core based on the tunneling magnetoresistance effect; and searching a chip template conforming to a preferred condition, and calculating the width d of an air gap opening to complete material fixing. According to the method, the complete structure of the magnetic core, the preferable material required for manufacturing and the preferable size are confirmed, the process comprises multi-dimensional simulation and experimental analysis, high-precision current detection is confirmed, meanwhile, the material fixing policy of the sensor with the small size is determined, and the accurate size is calculated.

A magnetic memory device includes first to third conductors and a 3-terminal type memory cell coupled to the first to third conductors. The memory cell includes: a fourth conductor and a magnetoresistance effect element provided between the fourth and third conductors. The magnetoresistance effect element includes: a first ferromagnet in contact with the fourth conductor; a second ferromagnet provided in an opposite side of the fourth conductor with respect to the first ferromagnet; a dielectric between the first and second ferromagnets; a third ferromagnet provided in an opposite side of the first ferromagnet with respect to the second ferromagnet; and a nonmagnet provided between the second and third ferromagnets. A concentration of a noble metal contained in the first ferromagnet is higher than a concentration of the noble metal contained in the second ferromagnet.

The invention provides a Z-axis magnetic field sensor. The Z-axis magnetic field sensor comprises a plastic packaging layer, a magnetic resistor Die, a plurality of pins and a first shielding layer. And the first shielding layer is arranged on the upper surface of the magnetoresistive Die and consists of a plurality of soft magnetic material blocks in an X-Y plane so as to shield a magnetic field in the X-Y direction on the upper surface of the magnetoresistive Die. The magnetic resistor Die is manufactured by adopting a wafer front-end process and comprises a magnetic resistor and a Z-axis magnetic field conversion part above the magnetic resistor. Each welding spot on the upper surface of the reluctance Die is directly covered by an independent soft magnetic material block in the first shielding layer to form a wiring end, and each pin is in one-to-one correspondence contact with the welding spot. The Z-axis magnetic field sensor provided by the invention is manufactured by combining a semiconductor front-end process and a special packaging process, so that the volume size is effectively reduced, an XY plane interference magnetic field is shielded more thoroughly, and the anti-interference capability is stronger.

The invention belongs to the technical field of nondestructive defect detection, and particularly relates to a method for detecting cracks in any direction in carbon steel based on magnetic resistance disturbance. The crack detection method comprises the following steps: applying a static magnetic field to magnetically conduct a carbon steel structure to a high-sensitivity stage; and then exciting an alternating-current magnetic field in an excitation range defined on the surface of the carbon steel structure to be detected, and counting the change condition of the magnetic conductivity of the carbon steel structure, so that effective identification and detection of internal cracks in any direction are realized. The crack detection method comprises the following steps of: magnetizing a carbon steel structure to be detected to the left side of a peak value of a magnetic conductivity curve by using a static magnetic field B0; defining an excitation range on the surface of the carbon steel structure to be detected, and exciting an alternating current magnetic field B1 in the excitation range; collecting an alternating current magnetic field B1 and a secondary alternating current magnetic field B2 in the excitation range, and converting to obtain a signal Bx; obtaining an alternating current component JBx and a direct current component ZBx; and moving the alternating-current magnetic field B1 in the excitation range, and counting the change trend of the alternating-current component JBx.

This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.

The invention provides a system for measuring an absolute position. The system comprises a strip-shaped magnetic track with only one pair of N-S poles, a magnetic head with magnetic resistors R1, R2, R3 and R4, and a calculation module. The N pole and the S pole of the strip-shaped magnetic track integrally form a rectangle, and straight line boundaries between the N pole and the S pole are neither parallel nor perpendicular to the strip-shaped magnetic track. And the magnetic resistors R1, R2, R3 and R4 have the same sensitive direction, are parallel or perpendicular to the strip-shaped magnetic track, and are distributed in the width direction (perpendicular to the strip-shaped magnetic track) of the strip-shaped magnetic track at equal intervals. And the calculation module obtains the absolute position of the magnetic head directly facing the strip-shaped magnetic track according to the sensing signals of the magnetic resistors R1, R2, R3 and R4. According to the technical scheme provided by the invention, the absolute position is detected by using a single magnetic track, magnetic field components in different directions of the same position point do not need to be measured (different magnetic resistors are actually not feasible to be placed at the same space point), and the measurement precision is effectively improved on the basis of reducing the size of an absolute position measurement system.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

The invention relates to a tunnel reluctance current sensor structure and temperature parameter optimization method and system, and the method comprises the steps: arranging an annular magnetic core, forming symmetrically distributed air gaps in the annular magnetic core, placing a tunnel reluctance current sensor in each air gap, and forming a double-air-gap magnetic circuit structure; constructing a magnetic field consistency coefficient according to the average magnetic induction intensity, the minimum magnetic induction intensity and the maximum magnetic induction intensity of the air gap center area, and performing optimization solution on structural parameters of the double-air-gap magnetic circuit structure by taking minimization of the magnetic field consistency coefficient as a target; respectively establishing a measurement channel and a reference channel according to the double-air-gap magnetic circuit structure obtained through optimization solution; multiple times of voltage signal acquisition are carried out through a reference channel under different injection reference currents and different temperature environments, and a temperature compensation factor is calculated, so that gain parameters of an amplifier in a measurement channel are adjusted. Compared with the prior art, the anti-interference capability and the measurement sensitivity of the system can be greatly improved.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

A magnetic tissue stimulator 100 comprising a coil 106, a first magnetic layer 122 having a first end 127 and a second end 123 and a second magnetic layer 124 having a first end 129 and a second end 125. The second end 123 of the first magnetic layer 122 is in contact 126 with the second end 125 of the second magnetic layer 124 and the first end 127 of the first magnetic layer 122 is separated from the first end 129 of the second magnetic layer 124 by a gap 128. A portion of the coil 106 is positioned between the first magnetic layer 122 and the second magnetic layer 124.

The invention provides a leakage protection method and device of a high-voltage charging system and a charging pile, and relates to the technical field of charging piles, and the method comprises the steps: obtaining leakage current data of the high-voltage charging system collected based on a fluxgate sensor or a tunnel magnetoresistance effect chip in a first time period; fitting a change curve by applying a third-order moving average algorithm according to the leakage current data, and judging whether the high-voltage charging system is subjected to insulation degradation or not according to the change curve; if it is determined that insulation degradation occurs, a high-voltage line of the high-voltage charging system is controlled to be cut off; according to the method, tiny electric leakage can be identified, and the tiny electric leakage can be prevented from developing into a serious fault through insulation degradation trend analysis, so that the detection performance is greatly improved.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

The invention provides a motor train unit door opening and closing electromagnetic valve fault detection method, device and equipment, and can be applied to the technical field of rail transit. The motor train unit door opening and closing electromagnetic valve fault detection method comprises the steps that in response to a motor train unit door opening and closing electromagnetic valve detection request, a current signal, changing along with time, of a coil in an electromagnetic valve is obtained through measurement, and the size of the current signal is related to the working state of a valve element in the electromagnetic valve; on the basis of processing of the current signal, the working state of a valve element of the electromagnetic valve is divided into N working states, and N is an integer larger than 1; on the basis of the N sets of target current signals in the N working states, the magnetic resistance change rate index and the action performance index of the electromagnetic valve are obtained through calculation, and each working state corresponds to one set of target current signals; and determining fault information of the electromagnetic valve according to the magnetic resistance change rate index and the action performance index.

Provided are a magnetoresistance effect element capable of inverting the magnetization of a recording layer by a small current, and an integrated circuit using the same. A magnetoresistance effect element 1 includes a layer 11 including Ru and O, a metal layer 12 provided adjacent to the layer 11 including Ru and O, a recording layer 13 including a magnetic body provided adjacent to the metal layer 12, a barrier layer 14, and a reference layer 15, the metal layer 12 including one or more metals selected from the group consisting of Pt, W, Ta, Ti, Cr, and V. The integrated circuit is composed of a plurality of magnetoresistance effect elements 1.

A neuromorphic device includes a plurality of paired elements and a control device that controls each of the plurality of paired elements. Each of the plurality of paired elements includes a first magnetoresistance effect element, a second magnetoresistance effect element, and a readout electrode shared by the first magnetoresistance effect element and the second magnetoresistance effect element. Each of the first magnetoresistance effect element and the second magnetoresistance effect element includes a reference layer, a magnetic recording layer, a non-magnetic layer, and two electrodes. The readout electrode is connected across the reference layers of the first magnetoresistance effect element and the second magnetoresistance effect element. The control device reverses a direction in which a read current flows between the first magnetoresistance effect element and the second magnetoresistance effect element in a specific paired element from which a signal is read.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

The invention provides a ferromagnetic / heavy metal heterojunction spin Hall magnetoresistance regulation and control method, which comprises the following steps of: introducing an antiferromagnetic insulating layer between a ferromagnetic metal layer and a substrate under the conditions of not changing a heavy metal material and not damaging a ferromagnetic / heavy metal interface, and regulating and controlling the direction of a neel vector of the antiferromagnetic insulating layer, so that the ferromagnetic / heavy metal heterojunction spin Hall magnetoresistance is obtained. Reflection and absorption of ferromagnetic / heavy metal heterojunction spin current are regulated and controlled so as to change the size and sign of spin Hall magnetoresistance.

This domain wall motion element includes a first magnetoresistance effect element and a first transistor. A first domain wall displacement layer of the first magnetoresistance effect element is electrically connected to a first active region of the first transistor. The length of the first magnetoresistance effect element in a first direction is longer than the length thereof in a second direction. The length of a first gate in the first direction is longer than the length thereof in the second direction. The length of the first magnetoresistance effect element in the first direction is longer than the length of the first gate in the first direction. A first gate length direction connecting the first active region and a second active region intersects with the first direction.

A memory cell capable of reversing magnetization on the basis of voltage drive is achieved without providing a selector element in the memory cell. A storage device includes: a memory cell provided with a magnetoresistive effect element; a word line connected to one end of the magnetoresistive effect element; and a bit line connected to another end of the magnetoresistive effect element. The magnetoresistive effect element may have a voltage controlled magnetic anisotropy (VCMA) effect. A driver configured to apply a reversing voltage for reversing a magnetization direction of the magnetoresistive effect element on the basis of the VCMA effect may be included. The driver may switch a voltage applied to the memory cell such that a reversing voltage is applied to a selected cell while a non-reversing voltage is applied to a non-selected cell, in which the non-reversing voltage does not reverse a magnetization direction of the magnetoresistive effect element.

The invention discloses a broadband magnetic array current sensing method and device based on a tunneling magnetoresistance effect. The method comprises the following steps: measuring magnetic fields at a plurality of measuring points around a measured current conductor; the measured magnetic field is utilized, the position of a measured current conductor is calculated through magnetic field inverse problem solution, and then the correlation coefficient between the measured current and the measured magnetic field is obtained through calibration; and by combining the actually measured magnetic field and the correlation coefficient obtained through calibration, the measured current is obtained through calculation. The broadband magnetic field measurement characteristic of a magnetic field sensor based on the tunneling magnetoresistance effect and the non-contact measurement advantage of magnetic array current sensing are fully utilized, and a new solution is provided for measurement of broadband, dynamic and strong random complex current signals of a power system.

The invention relates to a planar magneton valve sensor based on grid voltage regulation and control and electronic equipment comprising the planar magneton valve sensor. According to an embodiment, a core structure of a magneton magnetoresistance device may include: a first metal gate layer; a first ferromagnetic insulating layer (FMI1) disposed on the first metal gate electrode layer, and a second ferromagnetic insulating layer (FMI2) disposed on the first metal gate electrode layer; and an intermediate layer (Spacer) disposed on the first ferromagnetic insulating layer; and a second ferromagnetic insulating layer (FMI2) disposed on the non-magnetic intermediate layer, the first ferromagnetic insulating layer (FMI2) being disposed on the non-magnetic intermediate layer (FMI2), and the second ferromagnetic insulating layer (FMI2) being disposed on the non-magnetic intermediate layer (FMI2). And a second metal gate layer disposed on the second ferromagnetic insulating layer.

A magnetic sensor 60 includes a substrate 61 installed on a conductor 24, where a plurality of blocks including first blocks 62a, 63a and second blocks 62b, 63b positioned near and far from the center of the conductor, respectively, relative to each other are arranged on one surface of the substrate, and a plurality of magnetoresistance elements 51 disposed on the substrate, wherein a part of the plurality of magnetoresistance elements is disposed in the first block and another part is disposed in the second block, and the first and second blocks include first subblock 62a1, 63a1, 62b1, 63b1, respectively, on which the magnetoresistance elements 51 having magnetic sensing directions that are directions identical to each other, and the magnetoresistance elements in the first subblocks 62a1, 63a1, 62b1, 63b1 of the first and second blocks 62a, 63a, 62b, 63b are connected in series to form the resistor side R1.

The invention discloses a variable reluctance power generation system based on a wind power spherical roller bearing and a wind driven generator, the variable reluctance power generation system based on the wind power spherical roller bearing comprises a bearing and a power generation assembly, the bearing comprises an inner ring, an outer ring and a rolling body, the inner ring is arranged in the outer ring in a sleeved mode, and the inner ring can rotate relative to the outer ring in the radial direction of the outer ring; the rolling body is rotatably arranged between the inner ring and the outer ring, the power generation assembly comprises a mounting ring and a power generator, the mounting ring is detachably arranged on the outer ring and connected with the outer ring, the power generator is arranged on the outer ring, the power generator and the rolling body are oppositely arranged at intervals in the axial direction of the outer ring, and the power generator can generate a magnetic field and is matched with the rolling body so that when the rolling body rotates, the magnetic field can be generated; the rolling body drives the generator to generate a variable reluctance effect so as to generate an induction electric signal. The variable reluctance power generation system based on the wind power spherical roller bearing has the advantages of being simple in structure, accurate in detection result and the like.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

A magnetic sensor comprises a magnetic detection unit that outputs a signal by applying a magnetic field, and a signal correction unit that corrects the signal output from the magnetic detection unit. The magnetic detection unit includes a magnetoresistive effect element having a predetermined sensitivity axis. The signal correction unit generates a corrected signal by correcting the signal using a correction value capable of reducing the distortion error included in the signal output from the magnetic detection unit when the magnetic field having an intersecting direction that obliquely intersects the sensitivity axis is applied to the magnetoresistive effect element.

Systems, circuits, and methods provide self-calibration for magnetoresistance-based magnetic field sensors. Examples can include use of a closed loop acting as a feedback or calibration loop that is configured to process a reference signal applied to one or more magnetoresistance elements in a MR-based magnetic field sensor that also detects one or more external magnetic fields. The closed loop can adjust a bias voltage applied to the one or more magnetoresistance elements based on the reference signal. The calibration loop can accordingly provide for automatic or self-calibration of sensitivity of one or more magnetoresistance elements of the sensors to compensate for external factors affecting sensitivity of the one or more magnetoresistance elements.

The invention relates to a cable joint partial discharge signal magnetic sensing method and device based on a tunneling magnetoresistance effect, and the method comprises the steps: setting a plurality of flexible installation monitoring points at a shielding layer of a to-be-detected high-voltage cable joint, and installing TIT sensing modules respectively; partial discharge pulse voltage signals are respectively sensed through the tunneling magnetoresistance effect sensing unit, and position information is respectively acquired through the inertial navigation sensing unit; and performing signal processing on the partial discharge pulse voltage signal to obtain multiple paths of digital signals, respectively performing difference and combination calculation to generate a map and a difference signal, inputting the map and the difference signal into a neural network model to obtain a discharge fault type result, and processing each piece of position information according to a position amplitude weighting algorithm to obtain a discharge fault position result. Compared with the prior art, the system has the advantages of integration, low power consumption, strong anti-interference capability, accurate result and the like, and is very suitable for online measurement and positioning of partial discharge defects at high-voltage cable joints in an outdoor environment.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

This magnetization rotating element comprises a wiring layer and a first ferromagnetic layer connected to the wiring layer, and the wiring layer includes a quasicrystal.