38 results about "Magnetoresistance" patented technology

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

The application discloses a tunneling magnetoresistance film structure and a magnetic sensitive sensor. The tunneling magnetoresistance film structure comprises a substrate and a cover layer, the substrate is located at the bottom of the tunneling magnetoresistance film, and the cover layer is located at the top of the tunneling magnetoresistance film; a top pinning layer is located between the substrate and the cover layer and is close to the cover layer; a composite free layer is located on one side of the top pinning layer close to the substrate; in the direction of the substrate pointing to the cover layer, the composite free layer comprises an intrinsic free layer and a first sub-composite layer which are arranged in a stack, wherein the first sub-composite layer comprises a first soft magnetic layer, a first amorphous layer and a second soft magnetic layer which are arranged in a stack. The application improves the surface condition of the composite free layer and improves the growth quality of the top pinning layer.

The utility model discloses an angle displacement sensor, include: upper end cover, pivot, rotor core, have stator core of winding, bearing and shell, the pivot is rotatablely connected with shell through bearing, the open end of shell is closed through upper end cover, the center of upper end cover is equipped with the through -hole of the pivot wear, the inside of shell is connected with stator core, the rotor core is set up in the pivot outside, with stator core position corresponds, the convex pole magnetoresistance surface central angle of rotor core is 180 DEG. Increase the range of angle displacement sensor.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.

An MR element includes: a magnetized fixed layer; a free layer configured to have a magnetic vortex structure in which the center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer disposed between the magnetized fixed layer and the free layer. The free layer has: a lower surface located at one end in the stacking direction of the magnetized fixed layer, the gap layer, and the free layer; an upper surface located at the other end in the stacking direction; and a side surface connecting the lower surface and the upper surface. The side surface includes an inclined portion inclined relative to the stacking direction.

This invention provides a domain wall moving element and magnetic array with a high MR ratio and high domain wall controllability. The domain wall moving element of this embodiment includes: a magnetoresistive element having, sequentially from the side closest to the substrate, a reference layer, a non-magnetic layer, and a domain wall moving layer; a first magnetization fixing layer and a second magnetization fixing layer, respectively connected to and separated from the domain wall moving layer; the domain wall moving layer includes a ferromagnetic layer comprising multiple intercalation layers, the ferromagnetic layer containing Co and Fe, and having perpendicular magnetic anisotropy; during writing, a writing current flows along the domain wall moving layer between the first magnetization fixing layer and the second magnetization fixing layer.

The present invention reduces connection defects between a magnetoresistive effect element and a wiring. The memory device includes a memory cell including a magnetoresistive effect element disposed in a wiring region and a cell transistor disposed on a semiconductor substrate; a first lower-layer wiring disposed in the wiring region and connecting a terminal of the cell transistor and one end of the magnetoresistive effect element; a second lower-layer wiring disposed in the wiring region and configured to have substantially the same height as the first lower-layer wiring, the second lower-layer wiring connected to another terminal of the cell transistor different from the terminal; a first upper-layer wiring disposed in the wiring region and connected to another end of the magnetoresistive effect element; a second upper-layer wiring disposed in the wiring region in the same layer as the first upper-layer wiring and connected to the second lower-layer wiring; a first connection portion that is a columnar wiring connecting the second lower-layer wiring and the second upper-layer wiring; and a second connection portion that is a columnar wiring connecting another end of the magnetoresistive effect element different from the one end and the first upper-layer wiring and having a smaller diameter than the first connection portion.

A method for producing a printed magnetic functional element, in which a substrate is provided on one surface with at least one contact made of an electrically conductive material. Subsequently, a structure made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact and touches the contact directly, and the structure becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

This invention discloses a substrate interface pretreatment method for anisotropic magnetoresistive thin film deposition, belonging to the field of pre-deposition processing technology for thin film deposition. The method includes: (1) wiping the substrate surface with dilute hydrofluoric acid; (2) placing the substrate into a deposition chamber and evacuating it to a vacuum level ≤1×10⁻⁶. ‑6 Torr; (3) Introduce a protective atmosphere and perform a stepwise heating treatment on the substrate, including at least three steps: 100 ℃, 300 ℃, and 500 ℃. Hold each step for 20 min to 30 min to allow hydrofluoric acid to remove the oxide layer in situ and activate the surface; (4) Cool down to room temperature, stop the gas supply, and evacuate. This invention uses a synergistic process of wiping with dilute hydrofluoric acid and stepwise heating in the chamber to sequentially complete the removal of physically adsorbed water, selective reaction of the oxide layer, and activation of surface polarization bonds. The average thickness of the remaining oxide layer is ≤5 nm, and the density of surface active polarization bonds is increased by more than 10 times. The entire process is carried out in situ to avoid secondary contamination and significantly enhances the adhesion and crystal quality of the subsequently deposited film.

The application belongs to the field of photocatalysis, and relates to a method and system for improving product selectivity of photocatalytic reduction of carbon dioxide. The method places a magnetic composite photocatalyst with a negative magnetic resistance effect in a reaction container, applies an external magnetic field to the reaction system under light conditions, uses the negative magnetic resistance effect of the magnetic photocatalyst under the action of the external magnetic field to promote the separation of photo-generated carriers, and improves the efficiency and product selectivity of photocatalytic reduction of carbon dioxide. The magnetic composite photocatalyst is preferably a MOF-derived carbon layer-wrapped nickel-iron composite oxide with a chemical composition of NiFe2O4 / Fe2O3@C, and has oxygen vacancies and heterojunctions. The application also discloses a system for realizing the above method, which comprises a reaction container, a light source, a magnetic composite photocatalyst and a magnetic field generating device. The application controls the behavior of photo-generated carriers through a magnetic field, effectively suppresses electron-hole recombination, and significantly improves the performance of photocatalytic reduction of CO2.

A magnetic array includes: a plurality of magnetoresistance effect elements; and a pulse application device which applies a pulse to each of the plurality of magnetoresistance effect elements, wherein each of the plurality of magnetoresistance effect elements includes domain wall motion layer, ferromagnetic layer, and non-magnetic layer sandwiched between the domain wall motion layer and the ferromagnetic layer, wherein the pulse application device is configured to apply an initialization pulse and an operation pulse to each of the plurality of magnetoresistance effect elements, wherein the initialization pulse has a first pulse that is applied a plurality of times to spread a distribution of resistance values of the plurality of magnetoresistance effect elements from an initial distribution, and wherein a voltage of each first pulse is smaller than that of the operation pulse or each pulse length of the first pulse is shorter than that of the operation pulse.

This invention discloses a method for preparing rare-earth oxide / gallium oxide magnetoresistive composite thin films based on multi-source thermal resistance evaporation. The method includes: providing at least two evaporation raw materials, each independently selected from core-shell structured rare-earth oxide / gallium oxide composite particles or separately packaged rare-earth oxide precursor powder mixed with a homogeneous suspension of liquid gallium metal; after pretreatment of the substrate, placing the at least two evaporation raw materials in multiple evaporation boats, and forming a wet film using sequential evaporation or co-evaporation; finally, performing a flash calcination treatment under oxygen-rich conditions to obtain the composite thin film. Sequential evaporation can obtain multilayer thin films with different compositions; co-evaporation can obtain a single-layer mixed-component thin film. This invention allows for flexible control of the composition, thickness, and interface structure of the thin film through multi-source thermal resistance evaporation, enabling the preparation of single-layer mixed-component or multilayer thin films, expanding the design dimensions of magnetoresistive functional materials. Furthermore, the process is stable, the equipment cost is low, and it is suitable for large-scale production.

This invention discloses a method for preparing rare-earth oxide / gallium oxide polycrystalline thin films with magnetoresistance effect. The method includes: preparing a deposition raw material, wherein the deposition raw material is a rare-earth oxide / gallium oxide composite particle with a core-shell structure, the core of which is composed of La... 1‑x Ca x TmO3 rare earth oxide precursor powder; substrate pretreatment; composite particles placed in the evaporation boat of a thermal resistance evaporation apparatus, allowing the evaporation raw material to melt and evaporate, depositing on the substrate surface to form a wet film; finally, flash calcination under oxygen-rich conditions of 50%~95% to obtain a polycrystalline thin film. This invention uses a single core-shell structure composite particle as the evaporation source, achieving synergistic evaporation of rare earth oxides and gallium oxide, solving the problems of component fractionation of multi-component materials and evaporation source explosion and splashing. The resulting thin film has high crystal quality and significant magnetoresistance effect, and the equipment is simple, low-cost, and conducive to large-scale production.

Embodiments provide a magnetic storage device that can reduce the size of a storage cell. According to one embodiment, the magnetic storage device includes first to third conductor layers, and a three-terminal storage cell connected to the first to third conductor layers. The first storage cell includes a fourth conductor layer, a magnetoresistance effect element, a two-terminal first switching element, and a two-terminal second switching element. The fourth conductor layer includes a first portion connected to the first conductor layer, a second portion connected to the second conductor layer, and a third portion connected to the third conductor layer. The magnetoresistance effect element is connected between the third conductor layer and the fourth conductor layer. The first switching element is connected between the second conductor layer and the fourth conductor layer. The second switching element is connected between the first conductor layer and the third conductor layer.

A magnetic field sensor includes magnetoresistance elements supported by a surface of the die defining a plane, and a concentrator layer over the surface of the die and having an aperture. A first magnetoresistance element is adjacent to a first edge of the aperture and has a first reference direction parallel to the surface of the die and substantially perpendicular to the first aperture edge and a second magnetoresistance element is adjacent to a second edge of the aperture and has the first reference direction. The concentrator layer redirects the applied magnetic field to present a differential field parallel to the plane of the die to the magnetoresistance elements in response to applied field perpendicular to the plane of the die and to present a reduced magnitude and common mode field to the magnetoresistance elements in response to the applied field parallel to the plane of the die.

The embodiments provide a magnetic storage device in which the degradation of magnetic properties is suppressed. One embodiment of the magnetic storage device includes: a first conductor; a variable resistive material on the upper surface of the first conductor; a second conductor on the upper surface of the variable resistive material; a first insulator other than a nitride on the upper surface of the second conductor; a third conductor located within the first insulator and having a bottom surface in contact with the upper surface of the second conductor; and magnetoresistive elements on the upper surfaces of the first insulator and the third conductor.

The application discloses a kind of short-circuit fault detection circuit and method of aircraft power supply system, the device includes magnetic sensor, signal conditioning component, detection and warning component and power supply component.Magnetic sensor uses single-axis linear magnetoresistance element, installed in the predetermined position of aircraft ground line, the magnetic signal generated by short-circuit fault discharge current is converted into electric signal.Signal conditioning component carries out filter amplification to electric signal, and dynamic correction environmental magnetic field interference is passed through integral feedback circuit, without electromagnetic shielding and zero calibration.Detection and warning component monitors voltage amplitude according to preset threshold, and sends warning when exceeding limit.The application realizes non-invasive detection, strong anti-electromagnetic interference ability, high sensitivity, small size, easy to maintain, and is suitable for short-circuit fault detection under the complex electromagnetic environment of aircraft.

This invention discloses a rare-earth intermetallic compound with magnetization steps, its preparation method, and its applications, belonging to the field of functional materials technology. The rare-earth intermetallic compound is a dysprosium-gold-tin single-crystal material composed of Dy, Au, and Sn elements, with an atomic ratio of 1:1:1. This material exhibits magnetization step behavior, and the magnetization behavior shows a significant magnetic field orientation dependence. The magnetoresistance of this material continuously increases with increasing magnetic field without a significant saturation trend, and it shows a strong correlation coupling with the low-temperature magnetization step behavior, endowing the material with identifiable and controllable magnetic field response behavior. The rare-earth intermetallic compound provided by this invention achieves the synergistic appearance of large magnetoresistance and magnetization steps while maintaining the metal conductive channels, giving it unique advantages in applications such as low-temperature high-sensitivity magnetic sensing, and also providing a reliable material system for constructing novel functional devices.

The magnetic sensor (100) of the present invention, which is capable of efficiently applying an induced magnetic field to wiring disposed near a magnetoresistive element, comprises: a first magnetic body (31) and a second magnetic body (32) disposed separately in a first direction; a magnetoresistive element (10a) having a sensitivity axis along the first direction and located between the first magnetic body (31) and the second magnetic body (32) in the first direction; a first wiring (21, 22) located on a second direction side of the first magnetic body (10a) orthogonal to the first direction, which generates an induced magnetic field having a component of the first direction in the magnetic flux passing through the first magnetic body (10a) when energized; and an insulating portion (50) located between the first wiring (21, 22) and the first magnetic body (31), the insulating portion (50) may include a diffusion suppression portion, and the first wiring (21, 22) may be disposed on both sides of the first magnetic body (31) in the second direction.

A magnetic sensor is provided in which the output value at the time when the strength of a signal magnetic field is 0 is shifted from 0 by the difference in the magnetization state of the magnetization fixing layer of each of a plurality of magnetoresistance effect layer stacks (110) of a first magnetoresistance effect element (MR1) and a fourth magnetoresistance effect element (MR4) and the magnetization state of the magnetization fixing layer of each of a plurality of magnetoresistance effect layer stacks (110) of a second magnetoresistance effect element (MR2) and a third magnetoresistance effect element (MR3).

The application provides a magnetic sensor chip and a preparation method thereof and a magnetic encoder. The magnetic sensor chip comprises a substrate, a magnetoresistance element group arranged on the substrate and an electrode connected with the magnetoresistance element group. The magnetoresistance element group is arranged as eight groups, and the eight groups of magnetoresistance element groups are uniformly distributed along the same center. Each group of magnetoresistance element groups comprises two magnetoresistance elements, each of which comprises four magnetoresistance strips which are concentric with the magnetoresistance element group and are uniformly distributed in a fan shape. The central angle of the magnetoresistance strips of one magnetoresistance element in each group of magnetoresistance element groups and the magnetoresistance strips at the corresponding position of the other magnetoresistance element is 15°. The central angle of the magnetoresistance strips in one group of magnetoresistance element groups and the magnetoresistance strips at the corresponding position of the other group of magnetoresistance element groups adjacent to the one group of magnetoresistance element groups is 30°. Through the arrangement mode of the magnetoresistance element group and the magnetoresistance strips constituting the magnetoresistance element, the third harmonic in the chip output signal can be effectively eliminated, the output signal is closer to the complete sine wave and cosine wave, and the detection resolution of the rotation angle is improved.

A circuit includes an anisotropic magnetoresistance (AMR) sensor; an operational amplifier; and a calibration circuit. The AMR sensor has a first terminal, a second terminal, a third terminal, and a fourth terminal. The operational amplifier has a first terminal, a second terminal, a third terminal, and a fourth terminal. The first terminal of the operational amplifier is coupled to the second terminal of the AMR sensor. The second terminal of the operational amplifier is coupled to the third terminal of the AMR sensor. The calibration circuit is coupled to the first terminal of the operational amplifier. The calibration circuit is configured to provide an adjustable offset trim voltage at the first terminal of the operational amplifier to cancel out an offset voltage generated by the AMR sensor.

This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer connected to the spin-orbit torque wiring, in which the spin-orbit torque wiring has a length in a first direction larger than a length in a second direction when viewed from a lamination direction, and the spin-orbit torque wiring has different constituent elements between a first region and a second region having a symmetrical positional relationship with respect to a reference plane which passes through a geometric center of the first ferromagnetic layer when viewed from the lamination direction and is orthogonal to the first direction, and is asymmetrical in the first direction.

The application relates to a power semiconductor device and a packaging structure, wherein the power semiconductor device comprises: a first substrate, which has a plurality of conductive structures inside; a power chip, which is located on one side surface of the first substrate and is coupled with the conductive structures; and a tunneling magnetoresistance structure, which is located on the side surface of the first substrate away from the power chip and is coupled with the conductive structures. By constructing a unified first substrate platform, the power chip and the tunneling magnetoresistance structure are arranged in layers on the upper and lower sides of the first substrate, the structure is fixed, and it is not necessary to separately design sensor wiring and support structures for each packaging, so that the design universality is greatly improved.

To rapidly measure the magnitude of an external magnetic field.SOLUTION: A magnetoresistive relaxation oscillator magnetometer (1) includes: a capacitor (2); a charge resistor (3); a discharge resistor (4); a charge / discharge switch (5); a high voltage source terminal (6); a grounding terminal (7); and a signal output terminal (Vout). The charge resistor (3) comprises at least one charge magnetoresistive unit, and the discharge resistor (4) comprises at least one discharge magnetoresistive unit. The charge / discharge switch (5) is connected to the high voltage source terminal (6) and the high voltage source terminal (6) charges the capacitor (2) via the charge resistor (3) in a charge state, and the charge / discharge switch (5) is connected to the grounding terminal (7) and the capacitor (2) discharges electricity via the grounding terminal (7) by the discharge resistor (4) during a discharge stage.SELECTED DRAWING: Figure 1