224 results about "Magnetoresistance" patented technology

The invention relates to a tunnel reluctance current sensor structure and temperature parameter optimization method and system, and the method comprises the steps: arranging an annular magnetic core, forming symmetrically distributed air gaps in the annular magnetic core, placing a tunnel reluctance current sensor in each air gap, and forming a double-air-gap magnetic circuit structure; constructing a magnetic field consistency coefficient according to the average magnetic induction intensity, the minimum magnetic induction intensity and the maximum magnetic induction intensity of the air gap center area, and performing optimization solution on structural parameters of the double-air-gap magnetic circuit structure by taking minimization of the magnetic field consistency coefficient as a target; respectively establishing a measurement channel and a reference channel according to the double-air-gap magnetic circuit structure obtained through optimization solution; multiple times of voltage signal acquisition are carried out through a reference channel under different injection reference currents and different temperature environments, and a temperature compensation factor is calculated, so that gain parameters of an amplifier in a measurement channel are adjusted. Compared with the prior art, the anti-interference capability and the measurement sensitivity of the system can be greatly improved.

The invention provides a leakage protection method and device of a high-voltage charging system and a charging pile, and relates to the technical field of charging piles, and the method comprises the steps: obtaining leakage current data of the high-voltage charging system collected based on a fluxgate sensor or a tunnel magnetoresistance effect chip in a first time period; fitting a change curve by applying a third-order moving average algorithm according to the leakage current data, and judging whether the high-voltage charging system is subjected to insulation degradation or not according to the change curve; if it is determined that insulation degradation occurs, a high-voltage line of the high-voltage charging system is controlled to be cut off; according to the method, tiny electric leakage can be identified, and the tiny electric leakage can be prevented from developing into a serious fault through insulation degradation trend analysis, so that the detection performance is greatly improved.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

A memory cell capable of reversing magnetization on the basis of voltage drive is achieved without providing a selector element in the memory cell. A storage device includes: a memory cell provided with a magnetoresistive effect element; a word line connected to one end of the magnetoresistive effect element; and a bit line connected to another end of the magnetoresistive effect element. The magnetoresistive effect element may have a voltage controlled magnetic anisotropy (VCMA) effect. A driver configured to apply a reversing voltage for reversing a magnetization direction of the magnetoresistive effect element on the basis of the VCMA effect may be included. The driver may switch a voltage applied to the memory cell such that a reversing voltage is applied to a selected cell while a non-reversing voltage is applied to a non-selected cell, in which the non-reversing voltage does not reverse a magnetization direction of the magnetoresistive effect element.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

The invention relates to a cable joint partial discharge signal magnetic sensing method and device based on a tunneling magnetoresistance effect, and the method comprises the steps: setting a plurality of flexible installation monitoring points at a shielding layer of a to-be-detected high-voltage cable joint, and installing TIT sensing modules respectively; partial discharge pulse voltage signals are respectively sensed through the tunneling magnetoresistance effect sensing unit, and position information is respectively acquired through the inertial navigation sensing unit; and performing signal processing on the partial discharge pulse voltage signal to obtain multiple paths of digital signals, respectively performing difference and combination calculation to generate a map and a difference signal, inputting the map and the difference signal into a neural network model to obtain a discharge fault type result, and processing each piece of position information according to a position amplitude weighting algorithm to obtain a discharge fault position result. Compared with the prior art, the system has the advantages of integration, low power consumption, strong anti-interference capability, accurate result and the like, and is very suitable for online measurement and positioning of partial discharge defects at high-voltage cable joints in an outdoor environment.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

A sensor package is proposed, including a tunneling magnetoresistance (TMR) sensor chip and a buffer layer having a modulus of elasticity of less than 1 GPa at a temperature of 20° C. The buffer layer is fitted on and / or under the TMR sensor chip.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

According to one embodiment, a magnetic memory device includes: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction and arranged with the first conductor layer in a second direction intersecting the first direction; a first magnetoresistance effect element electrically connected to the first conductor layer; a second magnetoresistance effect element electrically connected to the second conductor layer; and a third conductor layer extending in the second direction and in contact with the first magnetoresistance effect element. In a write operation of writing data to the first magnetoresistance effect element, a first current is applied to the first conductor layer, a second current is applied to the second conductor layer, and a third current is applied to the third conductor layer independently of the first current and the second current.

This invention relates to the field of magnetic field detection technology and discloses a magnetic field detection method using a CrTe / ZnTe semi-metallic heterojunction grating structure. The method involves establishing a CrTe / ZnTe semi-metallic heterojunction grating structure through material preparation processes and detector operating frequency bands. A magnetic field is then applied to the CrTe / ZnTe grating structure, establishing a theoretical model that correlates the magnetic field strength with the response spectrum characteristics. The designed structure is fabricated using an etching process, and the sample is then packaged and tested. The invention proposes designing a CrTe / ZnTe semi-metallic heterojunction grating structure and utilizing changes in the response spectrum of the CrTe / ZnTe grating structure to detect the magnitude of the external magnetic field. Even slight changes in the magnetic field can affect the magnetoresistance and other properties of the CrTe / ZnTe material, thereby further altering the resonant frequency of the response spectrum of the CrTe / ZnTe grating structure. This method effectively improves the sensitivity, resonant mechanical properties, and temperature stability of magnetic field detection, providing a novel solution for highly sensitive weak magnetic field detection.

The application discloses a tunneling magnetoresistance film structure and a magnetic sensitive sensor. The tunneling magnetoresistance film structure comprises a substrate and a cover layer, the substrate is located at the bottom of the tunneling magnetoresistance film, and the cover layer is located at the top of the tunneling magnetoresistance film; a top pinning layer is located between the substrate and the cover layer and is close to the cover layer; a composite free layer is located on one side of the top pinning layer close to the substrate; in the direction of the substrate pointing to the cover layer, the composite free layer comprises an intrinsic free layer and a first sub-composite layer which are arranged in a stack, wherein the first sub-composite layer comprises a first soft magnetic layer, a first amorphous layer and a second soft magnetic layer which are arranged in a stack. The application improves the surface condition of the composite free layer and improves the growth quality of the top pinning layer.

The utility model discloses an angle displacement sensor, include: upper end cover, pivot, rotor core, have stator core of winding, bearing and shell, the pivot is rotatablely connected with shell through bearing, the open end of shell is closed through upper end cover, the center of upper end cover is equipped with the through -hole of the pivot wear, the inside of shell is connected with stator core, the rotor core is set up in the pivot outside, with stator core position corresponds, the convex pole magnetoresistance surface central angle of rotor core is 180 DEG. Increase the range of angle displacement sensor.

The invention relates to the technical field of encoders, in particular to a bridge module for an encoder and the encoder, the bridge module comprises a plurality of full-bridge modules connected in parallel, and a substrate comprises a resistance area, a first bonding pad area and a second bonding pad area; the resistance area is provided with a magnetoresistance unit; all the magneto-resistor units are sequentially arranged at intervals in the first direction; in the first direction, the first bonding pad area and the second bonding pad area are located on the two sides of the resistance area respectively. According to the embodiment of the invention, a plurality of full-bridge modules connected in parallel are adopted, common-mode interference such as environmental noise and voltage fluctuation can be counteracted when differential signals are output, and the problem of high noise of the existing Hall technology or AMR technology is solved. Moreover, the substrate is divided into the resistance area, the first bonding pad area and the second bonding pad area, and the magnetic resistance units and the bonding pad areas are independently arranged through partition layout, so that space waste caused by crossed arrangement of elements is avoided, the compact structure is realized, and the problems that an existing magnetic resistance module is disordered in layout and large in size are solved.

The application discloses a mover information determination method and device, equipment and storage medium, and relates to the technical field of conveying. The method is applied to a mover information determination device, the mover information determination device is used for identifying a mover moving on a stator and a position of the mover; a magnetic stripe is installed on the mover, and a plurality of Hall sensors and a plurality of anisotropic magnetoresistance (AMR) sensors are installed on the stator; the method comprises the following steps: acquiring sensing data of each AMR sensor and sensing data of each Hall sensor; determining a target position of the magnetic stripe according to the sensing data of each AMR sensor; determining encoding data of the magnetic stripe according to the target position and the sensing data of each Hall sensor; and determining a target mover corresponding to the encoding data according to a preset corresponding relationship between the encoding data and the mover. Therefore, the technical problem of low efficiency in identifying the mover in the related art can be solved.

To provide a magnetic sensor that makes it possible to measure a small magnetic field with high sensitivity, and that can contribute to downsizing.SOLUTION: Provided is a magnetic sensor 1 characterized by including a variable magnetic field detection part 100a including: a magnetoresistance effect element 10a having a first layer 13 which can be magnetized in a direction along a measurement magnetic field, a second layer 11 capable of maintaining the magnetization direction in a first direction (X direction), and a non-magnetic layer 12 located between the first layer 13 and the second layer 11; and a magnetization control part 20 for reversibly reversing the direction of magnetization 11 m of the second layer 11. The magnetization control part 20 can be an energizing magnetization control part 201 with which the magnetization direction is reversed by energization, and can have a spin torque generation part 21 and an anisotropy variable part 22. The magnetization control part 20 can have the spin torque generation part 21, in which the second layer 11 can be a variable second layer 111, or the second layer 11 can be integrated with the magnetization control part 20 to form an energizing variable second layer 112.SELECTED DRAWING: Figure 1

This invention discloses a high-precision dual-mass silicon micro-gyroscope device based on the tunneling magnetoresistive effect. The device comprises two layers: an upper layer is a silicon sensing structure, and a lower layer is a glass substrate structure with metal electrodes and a tunneling magnetoresistive detection module. The upper structure is bonded to the lower structure via anchor points. The upper structure consists of two identical gyroscope substructures, a pair of support beams, and a pair of anchor points. The lower structure consists of a tunneling magnetoresistive detection module, a glass substrate, driving electrodes, driving and detection electrodes, quadrature electrodes, a coil input interface, a coil input electrode, a coil output interface, a coil output electrode, a common electrode, and signal leads. This invention proposes a silicon micro-gyroscope using a miniature coil as the excitation mechanism, resulting in a stable magnetic field, controllable field strength, and high integration. Simultaneously, the use of a differential tunneling magnetoresistive detection structure provides advantages such as strong anti-common-mode error capability, high sensitivity, and high measurement accuracy.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.

The invention provides a layered Van der Waals material with full-compensation ferrimagnetism and a topological Hall effect as well as a preparation method and application of the layered Van der Waals material. The chemical formula of the material is MnxCrTe2, wherein 0 lt; and x is 1. The material provided by the invention has a wide compensation temperature range, a large magnetoresistance effect, anisotropy and a topological Hall effect, is a CrTe2 intercalation ferromagnetic material doped in different proportions, and can realize optimization and continuous adjustability of performances such as magnetism, Curie temperature and Hall parameters of the material through regulation and control of mechanisms such as the doping proportion, the temperature and the magnetic field; and a material basis is provided for researching the application of the Mn intercalation CrTe2 crystal material in the field of magnetic induced storage.

A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

A sensor, comprising: a first signal path including a plurality of magnetoresistance (MR) elements, the first signal path being configured to generate a first signal based, at least in part, on an output of the MR elements, the output of the MR elements being generated, at least in part, in response to an external magnetic field that is incident on the sensor and a first feedback magnetic field; a second signal path including one or more Hall elements, the second signal path being configured to generate a second signal based, at least in part, on an output of the Hall elements; a first feedback coil that is configured to generate the first feedback magnetic field, the first feedback coil being driven with a first drive current, the first drive current being generated, at least in part, based on the first signal.

A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.

A magnetic domain wall movement element according to the present embodiment includes a magnetoresistance effect element that has a reference layer, a nonmagnetic layer, and a magnetic domain wall movement layer in order from a side closer to a substrate; and a first magnetization fixed layer and a second magnetization fixed layer which are each in contact with the magnetic domain wall movement layer and are separated from each other, wherein the magnetic domain wall movement layer includes a plurality of ferromagnetic layers and a plurality of insertion layers sandwiched between the plurality of ferromagnetic layers, wherein the ferromagnetic layer contains Co and Fe and has perpendicular magnetic anisotropy, and wherein, when writing is performed, a write current is allowed to flow between the first magnetization fixed layer and the second magnetization fixed layer along the magnetic domain wall movement layer.

Embodiments provide a magnetic memory device that shortens write time. According to an embodiment, a magnetic memory device includes: a conductive layer; a magnetoresistive effect element disposed on the conductive layer and including a first end portion contacting the conductive layer and a second end portion opposite the first end portion; and a control circuit configured to perform a write operation to write data into the magnetoresistive effect element. The write operation includes: causing a current to flow in the conductive layer in a first cycle; and stopping the current in a second period after the first period and applying a negative voltage to the second end portion with respect to the first end portion.

In general, according to one embodiment, a magnetic memory device includes a magnetoresistive effect element. The magnetoresistive effect element includes first to second ferromagnetic layer, a layer stack, and first to third non-magnetic layer. The layer stack is arranged on a side opposite to the first ferromagnetic layer with respect to the second ferromagnetic layer. The third non-magnetic layer is arranged on a side opposite to the second non-magnetic layer with respect to the layer stack and contains a metallic oxide. The layer stack includes a fourth non-magnetic layer being in contact with the third non-magnetic layer and containing platinum (Pt).

Provided is a magnetic memory device in which a magnetoresistive effect element can be appropriately formed. A magnetic memory device according to an embodiment includes a magnetoresistive effect element including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, the magnetoresistive effect element has a structure in which a first magnetic layer, a second magnetic layer, and a non-magnetic layer are laminated. An electrode having an upper surface connected to the lower surface of the magnetoresistive effect element; and a first insulating layer which surrounds the side surface of the electrode, has an upper surface at a position lower than the position of the upper surface of the electrode, and is formed of an amphoteric oxide.

A magnetic field detection apparatus includes a magnetoresistive effect element and a helical coil. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction. The helical coil includes a parallel connection including first and second parts extending in a second axis direction inclined with respect to the first axis direction. The first and second parts are adjacent to each other in a third axis direction and coupled to each other in parallel. The helical coil is wound around the magnetoresistive effect element while extending along the third axis direction. The magnetoresistive effect film overlaps the first and second parts in a fourth axis direction orthogonal to the second and third axis directions. The helical coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in the third axis direction.

The invention relates to the technical field of temperature and magnetic field measurement, and discloses a composite sensing element, a battery, a battery management system and electronic equipment. The composite sensing element comprises a magnetoresistive element used for sensing magnetic field information around the magnetoresistive element based on a magnetoresistive anisotropy effect; and the temperature sensing element is electrically coupled with the magnetoresistive element and is used for sensing temperature information around the magnetoresistive element based on the characteristic that the resistivity of the magnetoresistive element monotonically changes along with the temperature. Through the synergistic effect of the magnetoresistive element and the temperature sensing element, the composite sensing element can synchronously realize magnetic field measurement and temperature measurement, has a relatively small volume, and simultaneously realizes the beneficial effects of simple structure and easy realization.