332 results about "Magnetoresistance" patented technology

The invention discloses a low-power-consumption winch sensor based on a tunneling magnetoresistance effect. The low-power-consumption winch sensor comprises a measurement module, a signal conversion unit, a shell, a mandrel, a magnetic rotary disc and a detection assembly. The magnetic turntable and the mandrel are connected and rotate synchronously, the detection assembly comprises a TMR sensing element and N magnets, and the magnetic turntable is provided with mounting blind holes for embedding the magnets; the TMR sensing element is arranged on the shell and comprises a mounting plate and two sensing units, the magnetic domain directions of the two sensing units are perpendicular to the rotation axis, magnetic resistance signals of the two sensing units are converted through the signal conversion unit and input into the measuring module, the horizontal distance between the centers of the two sensing units and the magnet and the rotation axis is R, and the center distance L of the two sensing units is smaller than R * sin (180 degrees / N); the sensor is based on the TMR tunneling magnetoresistance effect, is high in detection sensitivity and low in energy consumption, outputs square wave signals with phase differences, can be used for a measurement module to accurately analyze and calculate the rotating speed and the rotating direction of a winch roller, is simple in overall structure, small in radial size and easy to install, and the installation precision is controlled.

The invention provides a Z-axis magnetic field sensor. The Z-axis magnetic field sensor comprises a plastic packaging layer, a magnetic resistor Die, a plurality of pins and a first shielding layer. And the first shielding layer is arranged on the upper surface of the magnetoresistive Die and consists of a plurality of soft magnetic material blocks in an X-Y plane so as to shield a magnetic field in the X-Y direction on the upper surface of the magnetoresistive Die. The magnetic resistor Die is manufactured by adopting a wafer front-end process and comprises a magnetic resistor and a Z-axis magnetic field conversion part above the magnetic resistor. Each welding spot on the upper surface of the reluctance Die is directly covered by an independent soft magnetic material block in the first shielding layer to form a wiring end, and each pin is in one-to-one correspondence contact with the welding spot. The Z-axis magnetic field sensor provided by the invention is manufactured by combining a semiconductor front-end process and a special packaging process, so that the volume size is effectively reduced, an XY plane interference magnetic field is shielded more thoroughly, and the anti-interference capability is stronger.

The invention belongs to the technical field of nondestructive defect detection, and particularly relates to a method for detecting cracks in any direction in carbon steel based on magnetic resistance disturbance. The crack detection method comprises the following steps: applying a static magnetic field to magnetically conduct a carbon steel structure to a high-sensitivity stage; and then exciting an alternating-current magnetic field in an excitation range defined on the surface of the carbon steel structure to be detected, and counting the change condition of the magnetic conductivity of the carbon steel structure, so that effective identification and detection of internal cracks in any direction are realized. The crack detection method comprises the following steps of: magnetizing a carbon steel structure to be detected to the left side of a peak value of a magnetic conductivity curve by using a static magnetic field B0; defining an excitation range on the surface of the carbon steel structure to be detected, and exciting an alternating current magnetic field B1 in the excitation range; collecting an alternating current magnetic field B1 and a secondary alternating current magnetic field B2 in the excitation range, and converting to obtain a signal Bx; obtaining an alternating current component JBx and a direct current component ZBx; and moving the alternating-current magnetic field B1 in the excitation range, and counting the change trend of the alternating-current component JBx.

This magnetic array includes a substrate, a first unit, a second unit, a word line, a first read line, a second read line, a first gate line, a second gate line, and a source line. Each of the units includes a magnetoresistance effect element, a first switching element, and a second switching element. The magnetoresistance effect element includes a laminate and a wiring provided on the laminate. The first switching element is connected to a reference layer of the laminate. The second switching element is connected to the wiring. Each of the read lines is connected to the first switching element. The word line is connected to the second switching element. The gate lines are respectively connected to the first switching element and the second switching element of different units. The source line is connected to the wiring.

The invention provides a system for measuring an absolute position. The system comprises a strip-shaped magnetic track with only one pair of N-S poles, a magnetic head with magnetic resistors R1, R2, R3 and R4, and a calculation module. The N pole and the S pole of the strip-shaped magnetic track integrally form a rectangle, and straight line boundaries between the N pole and the S pole are neither parallel nor perpendicular to the strip-shaped magnetic track. And the magnetic resistors R1, R2, R3 and R4 have the same sensitive direction, are parallel or perpendicular to the strip-shaped magnetic track, and are distributed in the width direction (perpendicular to the strip-shaped magnetic track) of the strip-shaped magnetic track at equal intervals. And the calculation module obtains the absolute position of the magnetic head directly facing the strip-shaped magnetic track according to the sensing signals of the magnetic resistors R1, R2, R3 and R4. According to the technical scheme provided by the invention, the absolute position is detected by using a single magnetic track, magnetic field components in different directions of the same position point do not need to be measured (different magnetic resistors are actually not feasible to be placed at the same space point), and the measurement precision is effectively improved on the basis of reducing the size of an absolute position measurement system.

The invention relates to a tunnel reluctance current sensor structure and temperature parameter optimization method and system, and the method comprises the steps: arranging an annular magnetic core, forming symmetrically distributed air gaps in the annular magnetic core, placing a tunnel reluctance current sensor in each air gap, and forming a double-air-gap magnetic circuit structure; constructing a magnetic field consistency coefficient according to the average magnetic induction intensity, the minimum magnetic induction intensity and the maximum magnetic induction intensity of the air gap center area, and performing optimization solution on structural parameters of the double-air-gap magnetic circuit structure by taking minimization of the magnetic field consistency coefficient as a target; respectively establishing a measurement channel and a reference channel according to the double-air-gap magnetic circuit structure obtained through optimization solution; multiple times of voltage signal acquisition are carried out through a reference channel under different injection reference currents and different temperature environments, and a temperature compensation factor is calculated, so that gain parameters of an amplifier in a measurement channel are adjusted. Compared with the prior art, the anti-interference capability and the measurement sensitivity of the system can be greatly improved.

A magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. The magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (SOT) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the SOT layer includes an orbital Hall conductance (OHC) material layer configured to provide an orbital Hall current and a conversion layer configured to convert the orbital Hall current of the OHC material layer into the spin current, and the OHC material layer includes at least one material of iridium (Ir), manganese (Mn), vanadium (V), chromium (Cr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), tantalum (Ta), tungsten (W), and rhenium (Re), or an alloy thereof.

The invention provides a leakage protection method and device of a high-voltage charging system and a charging pile, and relates to the technical field of charging piles, and the method comprises the steps: obtaining leakage current data of the high-voltage charging system collected based on a fluxgate sensor or a tunnel magnetoresistance effect chip in a first time period; fitting a change curve by applying a third-order moving average algorithm according to the leakage current data, and judging whether the high-voltage charging system is subjected to insulation degradation or not according to the change curve; if it is determined that insulation degradation occurs, a high-voltage line of the high-voltage charging system is controlled to be cut off; according to the method, tiny electric leakage can be identified, and the tiny electric leakage can be prevented from developing into a serious fault through insulation degradation trend analysis, so that the detection performance is greatly improved.

Methods and apparatus for a magnetic field sensor having a first set of MR elements configured to change in resistance due to an applied magnetic field having an orientation in a sensitive axis of the first set of MR elements and a second set of MR elements that are immune to the applied magnetic field. The second set of MR elements is configured to change in resistance due to temperature. A processor can compensate for the response of the first set of MR elements based on the temperature information from the second set of MR elements.

Provided are a magnetoresistance effect element capable of inverting the magnetization of a recording layer by a small current, and an integrated circuit using the same. A magnetoresistance effect element 1 includes a layer 11 including Ru and O, a metal layer 12 provided adjacent to the layer 11 including Ru and O, a recording layer 13 including a magnetic body provided adjacent to the metal layer 12, a barrier layer 14, and a reference layer 15, the metal layer 12 including one or more metals selected from the group consisting of Pt, W, Ta, Ti, Cr, and V. The integrated circuit is composed of a plurality of magnetoresistance effect elements 1.

A memory cell capable of reversing magnetization on the basis of voltage drive is achieved without providing a selector element in the memory cell. A storage device includes: a memory cell provided with a magnetoresistive effect element; a word line connected to one end of the magnetoresistive effect element; and a bit line connected to another end of the magnetoresistive effect element. The magnetoresistive effect element may have a voltage controlled magnetic anisotropy (VCMA) effect. A driver configured to apply a reversing voltage for reversing a magnetization direction of the magnetoresistive effect element on the basis of the VCMA effect may be included. The driver may switch a voltage applied to the memory cell such that a reversing voltage is applied to a selected cell while a non-reversing voltage is applied to a non-selected cell, in which the non-reversing voltage does not reverse a magnetization direction of the magnetoresistive effect element.

The invention discloses a variable reluctance power generation system based on a wind power spherical roller bearing and a wind driven generator, the variable reluctance power generation system based on the wind power spherical roller bearing comprises a bearing and a power generation assembly, the bearing comprises an inner ring, an outer ring and a rolling body, the inner ring is arranged in the outer ring in a sleeved mode, and the inner ring can rotate relative to the outer ring in the radial direction of the outer ring; the rolling body is rotatably arranged between the inner ring and the outer ring, the power generation assembly comprises a mounting ring and a power generator, the mounting ring is detachably arranged on the outer ring and connected with the outer ring, the power generator is arranged on the outer ring, the power generator and the rolling body are oppositely arranged at intervals in the axial direction of the outer ring, and the power generator can generate a magnetic field and is matched with the rolling body so that when the rolling body rotates, the magnetic field can be generated; the rolling body drives the generator to generate a variable reluctance effect so as to generate an induction electric signal. The variable reluctance power generation system based on the wind power spherical roller bearing has the advantages of being simple in structure, accurate in detection result and the like.

The invention provides a magnetic superconducting memory and a preparation method and a read-write method thereof. According to the magnetic superconducting memory, the superconducting layer maps the magnetization state by using the resistance difference between the superconducting state and the normal state; the ferromagnetic layer serves as a free layer capable of adjusting magnetization, and the magnitude of superconductive critical current of the superconductive layer is influenced through the magnetization direction. The heavy metal layer generates spin orbit torque through a spin Hall effect to drive the ferromagnetic layer to be magnetized and overturned; an infinite switching ratio between a superconducting state and a normal state is realized through a superconducting diode magnetoresistance effect, a high-efficiency and high-reliability nonvolatile storage scheme is realized in combination with a current-driven spin-orbit torque magnetization overturning technology, inherent defects of a traditional TMR are thoroughly overcome, and the signal contrast of a storage unit is remarkably improved; the heterostructure designed by the invention replaces a traditional magnetic tunnel junction, reduces material stacking and process complexity, and adopts a material compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process to promote large-scale integration of the low-temperature memory.

A magnetic sensor comprises a magnetic detection unit that outputs a signal by applying a magnetic field, and a signal correction unit that corrects the signal output from the magnetic detection unit. The magnetic detection unit includes a magnetoresistive effect element having a predetermined sensitivity axis. The signal correction unit generates a corrected signal by correcting the signal using a correction value capable of reducing the distortion error included in the signal output from the magnetic detection unit when the magnetic field having an intersecting direction that obliquely intersects the sensitivity axis is applied to the magnetoresistive effect element.

The invention relates to a cable joint partial discharge signal magnetic sensing method and device based on a tunneling magnetoresistance effect, and the method comprises the steps: setting a plurality of flexible installation monitoring points at a shielding layer of a to-be-detected high-voltage cable joint, and installing TIT sensing modules respectively; partial discharge pulse voltage signals are respectively sensed through the tunneling magnetoresistance effect sensing unit, and position information is respectively acquired through the inertial navigation sensing unit; and performing signal processing on the partial discharge pulse voltage signal to obtain multiple paths of digital signals, respectively performing difference and combination calculation to generate a map and a difference signal, inputting the map and the difference signal into a neural network model to obtain a discharge fault type result, and processing each piece of position information according to a position amplitude weighting algorithm to obtain a discharge fault position result. Compared with the prior art, the system has the advantages of integration, low power consumption, strong anti-interference capability, accurate result and the like, and is very suitable for online measurement and positioning of partial discharge defects at high-voltage cable joints in an outdoor environment.

Provided are a magnetic memory device, a method of manufacturing the magnetic memory device, and a memory apparatus including the magnetic memory device. The magnetic memory device includes a spin-orbit torque (SOT) generation layer configured to generate a SOT, a spin current transfer layer on a lower surface of the SOT generation layer, and a tunneling magnetoresistance layer on a lower surface of the spin current transfer layer and including a free layer, a tunnel barrier layer, and a pinned layer. The spin current transfer layer is configured to transfer a spin current generated from the SOT generation layer to the free layer.

This magnetization rotating element comprises a wiring layer and a first ferromagnetic layer connected to the wiring layer, and the wiring layer includes a quasicrystal.

A sensor package is proposed, including a tunneling magnetoresistance (TMR) sensor chip and a buffer layer having a modulus of elasticity of less than 1 GPa at a temperature of 20° C. The buffer layer is fitted on and / or under the TMR sensor chip.

To provide a magnetoresistive element, a magnetic memory, and a magnetic sensor that are resistant to the influence of external forces such as heat and external magnetic fields and have high magnetization stability.SOLUTION: A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer, and an underlayer. The non-magnetic layer is located between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer is located between the underlayer and the non-magnetic layer. The underlayer contains Ta. The first ferromagnetic layer is expressed as CoαFeβXγPtδ, where X is boron or carbon, and α+β+γ+δ=1, α≥β>0, and δ≤0.3 are satisfied. The easy axis of magnetization of the first ferromagnetic layer is a first in-plane direction perpendicular to a stacking direction, and the anisotropy field of the first ferromagnetic layer in a second direction is 50 Oe or more. The second direction is perpendicular to the stacking direction and the first direction.SELECTED DRAWING: Figure 1

This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.

According to one embodiment, a magnetic memory device includes: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction and arranged with the first conductor layer in a second direction intersecting the first direction; a first magnetoresistance effect element electrically connected to the first conductor layer; a second magnetoresistance effect element electrically connected to the second conductor layer; and a third conductor layer extending in the second direction and in contact with the first magnetoresistance effect element. In a write operation of writing data to the first magnetoresistance effect element, a first current is applied to the first conductor layer, a second current is applied to the second conductor layer, and a third current is applied to the third conductor layer independently of the first current and the second current.

This invention relates to the field of magnetic field detection technology and discloses a magnetic field detection method using a CrTe / ZnTe semi-metallic heterojunction grating structure. The method involves establishing a CrTe / ZnTe semi-metallic heterojunction grating structure through material preparation processes and detector operating frequency bands. A magnetic field is then applied to the CrTe / ZnTe grating structure, establishing a theoretical model that correlates the magnetic field strength with the response spectrum characteristics. The designed structure is fabricated using an etching process, and the sample is then packaged and tested. The invention proposes designing a CrTe / ZnTe semi-metallic heterojunction grating structure and utilizing changes in the response spectrum of the CrTe / ZnTe grating structure to detect the magnitude of the external magnetic field. Even slight changes in the magnetic field can affect the magnetoresistance and other properties of the CrTe / ZnTe material, thereby further altering the resonant frequency of the response spectrum of the CrTe / ZnTe grating structure. This method effectively improves the sensitivity, resonant mechanical properties, and temperature stability of magnetic field detection, providing a novel solution for highly sensitive weak magnetic field detection.

The application discloses a tunneling magnetoresistance film structure and a magnetic sensitive sensor. The tunneling magnetoresistance film structure comprises a substrate and a cover layer, the substrate is located at the bottom of the tunneling magnetoresistance film, and the cover layer is located at the top of the tunneling magnetoresistance film; a top pinning layer is located between the substrate and the cover layer and is close to the cover layer; a composite free layer is located on one side of the top pinning layer close to the substrate; in the direction of the substrate pointing to the cover layer, the composite free layer comprises an intrinsic free layer and a first sub-composite layer which are arranged in a stack, wherein the first sub-composite layer comprises a first soft magnetic layer, a first amorphous layer and a second soft magnetic layer which are arranged in a stack. The application improves the surface condition of the composite free layer and improves the growth quality of the top pinning layer.

The present invention provides a tunnel magnetoresistor, a method for manufacturing the same, and a tunnel magnetic device. The tunnel magnetoresistor comprises: a pinned layer; a free layer disposed opposite the pinned layer, the free layer being a superparamagnetic layer with a thickness less than or equal to a critical thickness; a tunnel barrier layer located between the pinned layer and the free layer; and an underlying conductive structure located on the side of the free layer facing away from the tunnel barrier layer. The free layer in the tunnel magnetoresistor is a superparamagnetic layer with a thickness less than or equal to the critical thickness. During magnetization, the magnetic moments of the single-domain particles constituting the superparamagnetic layer can be oriented in the same direction to achieve magnetic saturation, resulting in a high magnetic susceptibility. Therefore, the tunnel magnetoresistor provided by the present invention has a large saturation field and high linearity.

The utility model discloses an angle displacement sensor, include: upper end cover, pivot, rotor core, have stator core of winding, bearing and shell, the pivot is rotatablely connected with shell through bearing, the open end of shell is closed through upper end cover, the center of upper end cover is equipped with the through -hole of the pivot wear, the inside of shell is connected with stator core, the rotor core is set up in the pivot outside, with stator core position corresponds, the convex pole magnetoresistance surface central angle of rotor core is 180 DEG. Increase the range of angle displacement sensor.

The invention relates to the technical field of encoders, in particular to a bridge module for an encoder and the encoder, the bridge module comprises a plurality of full-bridge modules connected in parallel, and a substrate comprises a resistance area, a first bonding pad area and a second bonding pad area; the resistance area is provided with a magnetoresistance unit; all the magneto-resistor units are sequentially arranged at intervals in the first direction; in the first direction, the first bonding pad area and the second bonding pad area are located on the two sides of the resistance area respectively. According to the embodiment of the invention, a plurality of full-bridge modules connected in parallel are adopted, common-mode interference such as environmental noise and voltage fluctuation can be counteracted when differential signals are output, and the problem of high noise of the existing Hall technology or AMR technology is solved. Moreover, the substrate is divided into the resistance area, the first bonding pad area and the second bonding pad area, and the magnetic resistance units and the bonding pad areas are independently arranged through partition layout, so that space waste caused by crossed arrangement of elements is avoided, the compact structure is realized, and the problems that an existing magnetic resistance module is disordered in layout and large in size are solved.

The application discloses a mover information determination method and device, equipment and storage medium, and relates to the technical field of conveying. The method is applied to a mover information determination device, the mover information determination device is used for identifying a mover moving on a stator and a position of the mover; a magnetic stripe is installed on the mover, and a plurality of Hall sensors and a plurality of anisotropic magnetoresistance (AMR) sensors are installed on the stator; the method comprises the following steps: acquiring sensing data of each AMR sensor and sensing data of each Hall sensor; determining a target position of the magnetic stripe according to the sensing data of each AMR sensor; determining encoding data of the magnetic stripe according to the target position and the sensing data of each Hall sensor; and determining a target mover corresponding to the encoding data according to a preset corresponding relationship between the encoding data and the mover. Therefore, the technical problem of low efficiency in identifying the mover in the related art can be solved.

To provide a magnetic sensor that makes it possible to measure a small magnetic field with high sensitivity, and that can contribute to downsizing.SOLUTION: Provided is a magnetic sensor 1 characterized by including a variable magnetic field detection part 100a including: a magnetoresistance effect element 10a having a first layer 13 which can be magnetized in a direction along a measurement magnetic field, a second layer 11 capable of maintaining the magnetization direction in a first direction (X direction), and a non-magnetic layer 12 located between the first layer 13 and the second layer 11; and a magnetization control part 20 for reversibly reversing the direction of magnetization 11 m of the second layer 11. The magnetization control part 20 can be an energizing magnetization control part 201 with which the magnetization direction is reversed by energization, and can have a spin torque generation part 21 and an anisotropy variable part 22. The magnetization control part 20 can have the spin torque generation part 21, in which the second layer 11 can be a variable second layer 111, or the second layer 11 can be integrated with the magnetization control part 20 to form an energizing variable second layer 112.SELECTED DRAWING: Figure 1

This invention discloses a high-precision dual-mass silicon micro-gyroscope device based on the tunneling magnetoresistive effect. The device comprises two layers: an upper layer is a silicon sensing structure, and a lower layer is a glass substrate structure with metal electrodes and a tunneling magnetoresistive detection module. The upper structure is bonded to the lower structure via anchor points. The upper structure consists of two identical gyroscope substructures, a pair of support beams, and a pair of anchor points. The lower structure consists of a tunneling magnetoresistive detection module, a glass substrate, driving electrodes, driving and detection electrodes, quadrature electrodes, a coil input interface, a coil input electrode, a coil output interface, a coil output electrode, a common electrode, and signal leads. This invention proposes a silicon micro-gyroscope using a miniature coil as the excitation mechanism, resulting in a stable magnetic field, controllable field strength, and high integration. Simultaneously, the use of a differential tunneling magnetoresistive detection structure provides advantages such as strong anti-common-mode error capability, high sensitivity, and high measurement accuracy.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.