92 results about "Magneto resistance" patented technology

A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and / or a low saturation magnetization layer.

A sensor, including: a gradiometer including a plurality of magnetoresistors, the gradiometer being configured to generate a sensing signal in response to a magnetic field that is at least in part produced as a result of an electrical current flowing through a conductor; and electronic circuitry configured to detect an electrical current consumption of the gradiometer, compare the electrical current consumption against at least one of a first threshold and a second threshold, and output an indication that the sensor is subject to tampering based on an outcome of the comparison.

The embodiment of the specification provides a non-contact communication module, an auxiliary communication antenna and equipment. The scheme comprises: the communication module comprises a communication antenna, a communication chip and an auxiliary communication antenna; wherein the communication antenna is connected with the communication chip; the auxiliary communication antenna is independent of the communication antenna and is located on the side of the communication antenna close to the communication equipment which performs non-contact communication with the communication module; the auxiliary communication antenna presents negative magnetic resistance in the working frequency range of the communication antenna; at least part of the projection of the auxiliary communication antenna is located in the area where the communication antenna is located.

An MR element comprises: a magnetization-fixed layer in which one direction of magnetization is defined; a free layer arranged to contain a magnetic vortex structure and configured so that a center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer arranged between the magnetization-fixed layer and the free layer. The magnetization-fixed layer comprises a first region and a second region in which the magnetization directions of the magnetization-fixed layer are less aligned than in the first region.The free layer is arranged such that an area of ​​an overlapping part, in which the free layer and the first area overlap when considering the magnetization-fixed layer, the gap layer and the free layer in the stacking direction, is larger than an area of ​​an overlapping part, in which the free layer and the second area overlap when considered in the stacking direction.

According to one embodiment, the present invention comprises a voltage-controlled magnetoresistive element having a variable resistance value, and a first control circuit that controls a voltage or a current applied to the magnetoresistive element. The magnetoresistive element includes a first magnetic layer having a voltage-controlled magnetic anisotropy effect, a second magnetic layer having a voltage-controlled magnetic anisotropy effect of a different magnitude from the voltage-controlled magnetic anisotropy effect of the first magnetic layer, and a spacer layer provided between the first magnetic layer and the second magnetic layer. The first control circuit attenuates the voltage or the current.

The present application provides a magnetic layer having a coercive force Hc of 2.00 kOe or more and a residual magnetization Mrt per unit area of 2.00 memu / cm2 or more, which is achieved without using a non-magnetic underlayer for promoting in-plane orientation of the magnetic layer and without performing heat deposition 2 The above in-plane magnetization film, in-plane magnetization film multilayer structure, hard bias layer, magnetoresistance effect element, and sputtering target. The in-plane magnetization film has: a preliminary magnetic layer (12A) containing Co, Pt, and a non-magnetic grain boundary material and having a thickness of 1 to 32 nm; and a magnetic layer main portion (12B) formed on the preliminary magnetic layer (12A) and containing Co, Pt, and a non-magnetic oxide, the above non-magnetic grain boundary material of the preliminary magnetic layer (12A) containing at least one of a Zn oxide and a Ta oxide.

A method for fabricating semiconductor device includes first forming a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, performing an atomic layer deposition (ALD) process or a high-density plasma (HDP) process to form a passivation layer on the first MTJ and the second MTJ, performing an etching process to remove the passivation layer adjacent to the first MTJ and the second MTJ, and then forming an ultra low-k (ULK) dielectric layer on the passivation layer.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

This disclosure relates to the field of thermal automatic control, specifically to a speed signal processing method and system. The system includes: a speed measuring gear, a magnetoresistive speed sensor, a first capacitor, a signal shaping module, and a controller. The speed measuring gear and the magnetoresistive speed sensor are arranged adjacently and separated by an air gap threshold. The magnetoresistive speed sensor is connected to both ends of the first capacitor to generate a speed signal when the speed measuring gear rotates. The first capacitor is used to remove zero-crossing harmonics from the speed signal to correct it. The first and second input ports of the signal shaping module are connected to both ends of the first capacitor to generate a square wave signal based on the corrected speed signal. The controller receives the square wave signal. Thus, the first capacitor selects the frequency of the speed signal, removes zero-crossing harmonics outside the passband, and repairs the distorted speed waveform to obtain a sine wave.

The application discloses a rotor, a permanent magnet synchronous reluctance motor and a vehicle, and relates to the technical field of rotor design. The rotor comprises a rotor core, and the rotor core is uniformly provided with a plurality of magnetic barrier groups in the circumferential direction; each magnetic barrier group comprises a third group of magnetic steel grooves, a second group of magnetic steel grooves and a first group of magnetic steel grooves which are sequentially and spacedly arranged along the radial direction outward. The first group of magnetic steel grooves is composed of two first magnetic steel groove rows which are symmetric about the d-axis and arranged in a V shape; each first magnetic steel groove is internally provided with a rectangular magnetic steel. The second group of magnetic steel grooves is composed of two second magnetic steel groove rows which are symmetric about the d-axis and arranged in a V shape; each second magnetic steel groove is internally provided with a rectangular magnetic steel. The third group of magnetic steel grooves is composed of two third magnetic steel groove rows which are symmetric about the d-axis and arranged in a U shape; the third magnetic steel groove is a V-shaped groove which is formed by the communication of a magnetic steel groove I section and a magnetic steel groove II section; the magnetic steel groove I section and the magnetic steel groove II section are each internally provided with a rectangular magnetic steel. The rotor of the application can increase the magnetic aggregation capacity, optimize the air gap magnetic flux density waveform, reduce the magnetic flux leakage and improve the magnetic saturation phenomenon.

A biomagnetic sensor that incorporates an integrated active noise cancellation unit that uses a gradiometer to remove ambient magnetic noise from a detection signal obtained from a tunnelling magnetoresistive (TMR) sensor unit that is indicative of a magnetic field adjacent to biological tissue. The ambient magnetic noise can thus be removed in real time at a front end of the sensor (e.g. as part of circuitry in the sensor body itself). The active noise cancellation technique proposed herein may be effective enough to enable the biomagnetic sensor to be used in an unshielded environment (i.e. an environment that is subject to the Earth's magnetic field, for example), which widens significantly the potential uses for the sensor.

An MR element includes: a magnetized fixed layer; a free layer configured to have a magnetic vortex structure in which the center of the magnetic vortex structure can move according to a target magnetic field; and a gap layer disposed between the magnetized fixed layer and the free layer. The free layer has: a lower surface located at one end in the stacking direction of the magnetized fixed layer, the gap layer, and the free layer; an upper surface located at the other end in the stacking direction; and a side surface connecting the lower surface and the upper surface. The side surface includes an inclined portion inclined relative to the stacking direction.

A three-dimensional (3D) magnetoresistive random access memory (MRAM) device includes a plurality of stacked cells, a plurality of stacked insulating layers, and a first interconnect structure of a first type. The plurality of cells are stacked in a direction perpendicular to a major surface of a substrate of the 3D MRAM device. Each cell of the first plurality of cells is separated by an insulating layer of the plurality of insulating layers from another cell of the plurality of cells. Each cell of the first plurality of cells includes a magnetic tunnel junction (MTJ) structure and a second interconnect structure of a second type configured to interface with the MTJ structure of the cell. The first interconnect structure is oriented orthogonally to the second interconnect of each cell of the plurality of cells, and extends through the plurality of cells to interface with the MTJ structure in each cell.

The application discloses a preparation method of a nano or atomic scale spin valve, which comprises the following steps: preparing a buffer layer and a metal electrode on a substrate surface, preparing a magnetic metal point contact device based on a proximity effect photolithography method, placing the device on a vacuum probe station, preparing an atomic scale point contact structure by using a current feedback control method, and preparing a magnetic tunnel junction with a magnetic resistance of up to 40% by natural oxidation, so as to obtain the nano or atomic scale spin valve. The preparation method can effectively control the contact width of the atomic contact point, and compared with the prior art, the complexity of the spin valve structure is reduced, and the device power consumption is reduced to a certain extent. The preparation method is simple, the magnetic tunnel junction has a large magnetic resistance, and is compatible with a traditional CMOS process, so that an advantage is provided for the integration of subsequent devices.

Systems and methods for sensing current utilize a coil-less sensor based circuit to detect current. The current sensing circuit includes a first conductive line segment that carries mains AC current, and a second conductive line segment conductively coupled in electrical parallel to the first line segment. The coil-less sensor is mounted between the two conductive line segments proximate to and generally opposite the second conductive line segment. Any suitable coil-less sensor may be used, including Hall effect sensors, tunneling magneto resistive (“TMR”) sensors, anisotropic magneto resistive (“AMR”) sensors, and other types of sensors that do not use coils to sense current. This arrangement results in two magnetic fields being induced that are additive at the coil-less sensor, which allows the sensor to produce a higher output voltage, thereby providing a more accurate current sensor.

This invention relates to the field of magnetic electronic devices, and more particularly to a magnetic tunnel junction, its fabrication method, and its applications. The magnetic tunnel junction includes: a lower electrode layer, a tunneling barrier layer, and an upper electrode layer; the tunneling barrier layer is disposed between the upper and lower electrode layers; wherein the tunneling barrier layer includes a self-supporting hafnium zirconium oxide film; the thickness of the self-supporting hafnium zirconium oxide film is 1-3 nm. The fabrication of this magnetic tunnel junction includes: firstly, growing an ultrathin LSMO / HZO bilayer structure on a substrate using PLD; utilizing LSMO as a sacrificial layer that can be selectively removed by a mixed solution of HCl and KI to release HZO in a self-supporting form; then, attaching the HZO to an FGT electrode to finally form the magnetic tunnel junction. The magnetic tunnel junction provided by this invention exhibits a tunneling magnetoresistance ratio (TMR) of approximately 140% at 2 K, indicating that the combination of this ultrathin ferroelectric barrier and the two-dimensional ferromagnetic electrode can achieve significant spin-polarized tunneling.

A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic Heusler layer including a half metallic Heusler material having a tetragonal lattice structure. The half metallic Heusler layer is located outward of the templating layer, and has a Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic Heusler material. A tunnel barrier is located outward of the half metallic Heusler layer, and a magnetic layer is located outward of the tunnel barrier.

The present invention relates to a magnetic sensor apparatus comprising at least one measurement bridge (10) having magnetoresistive elements (R1 to R4), at least one line component (18), by supplying current to which a magnetic field that varies a particular orientation of a polarity (12) of the free layers can be induced, and an operating device (20) by means of which, when the magnetic sensor apparatus is in a constant orientation mode into which the magnetic sensor apparatus can be transferred and / or in which the magnetic sensor apparatus can be held by supplying direct current to the at least one line component (18), a first differential voltage value between two positions of the measurement bridge (10) can be ascertained and / or, when the magnetic sensor apparatus is in an alternating orientation mode into which the magnetic sensor apparatus can be transferred and / or in which the magnetic sensor apparatus can be held by supplying alternating current to the at least one line component (18), a second differential voltage value between the two positions of the measurement bridge (10) can be ascertained, wherein additionally at least an amount of a difference between the second differential voltage value and the first differential voltage value can be ascertained by means of the operating device (20), and an offset value and / or a desired mode of the magnetic sensor apparatus can be determined by the operating device (20) using at least the ascertained amount.

Provided in the present utility model is an air-magnetic combined multi-stage adjustable resistance output structure, comprising a housing, an adjustment cover, an air resistance fan blade assembly, a magnetic resistance mechanism and a magnetic resistance ring. By means of the rotation of the adjustment cover, the degree of overlap between an air inlet structure and a grid structure is changed, thereby adjusting the magnitude of air resistance; moreover, the rotation of the adjustment cover drives a magnetic base to move towards or away from the magnetic resistance ring, thereby adjusting the magnitude of magnetic resistance. The structure achieves coordinated adjustment of air resistance and magnetic resistance, providing a wider range of resistance adjustment, thereby satisfying exercise requirements of different users; the structure is compact and installation and maintenance are easy.

The application belongs to the field of vibration isolation and noise reduction equipment, and discloses a variable load magnetic gas type three-way high static low dynamic stiffness vibration isolator and a use method. The variable load magnetic gas type three-way high static low dynamic stiffness vibration isolator comprises a supporting assembly, a positive stiffness assembly and a negative stiffness assembly. The positive stiffness assembly provides static bearing capacity and is composed of an air spring and a linear spring, and the negative stiffness assembly is composed of a magnetic group and a supporting structure thereof, and the purpose of reducing dynamic stiffness is achieved by being connected in parallel with the positive stiffness assembly. The variable load magnetic gas type three-way high static low dynamic stiffness vibration isolator has large static stiffness and small dynamic stiffness, three-way forces generated by the movement between the inner magnetic group and the outer magnetic resistance are used to offset a part of three-way forces generated by the air bag, the function of reducing stiffness is realized, the variable load magnetic gas type three-way high static low dynamic stiffness vibration isolator can adapt to the change of load working conditions, has a wider application scene and better three-way low-frequency vibration isolation performance, a wide vibration isolation frequency band, and stable working performance.

A magnetoresistive element is provided that can measure an external magnetic field along an out-of-plane axis that is substantially perpendicular to the plane of the sensing layer. The magnetoresistive element (2) includes a reference layer (210) having a fixed reference magnetization, a sensing layer (23) having a free sense magnetization (230), and a tunnel barrier layer (22) between the reference layer (21) and the sensing layer (23), the magnetoresistive element (2) being configured to measure an external magnetic field (60) oriented substantially perpendicular to the plane of the two layers (21, 23). The reference magnetization (210) is oriented substantially perpendicular to the plane of the reference layer (21). The sense magnetization (230) has a vortex configuration (60) in the absence of an external magnetic field, with the vortex core (231) being substantially parallel to the plane of the sensing layer (23) and having a magnetization along an out-of-plane axis (50) substantially perpendicular to the plane of the sensing layer (23).

This invention provides a domain wall moving element and magnetic array with a high MR ratio and high domain wall controllability. The domain wall moving element of this embodiment includes: a magnetoresistive element having, sequentially from the side closest to the substrate, a reference layer, a non-magnetic layer, and a domain wall moving layer; a first magnetization fixing layer and a second magnetization fixing layer, respectively connected to and separated from the domain wall moving layer; the domain wall moving layer includes a ferromagnetic layer comprising multiple intercalation layers, the ferromagnetic layer containing Co and Fe, and having perpendicular magnetic anisotropy; during writing, a writing current flows along the domain wall moving layer between the first magnetization fixing layer and the second magnetization fixing layer.

The utility model discloses a kind of magnetic attraction ring and electronic equipment protective shell, and magnetic attraction ring includes viscose ring;Magnetic ring, with viscose ring is bonded;Metal ring, with the end surface of magnetic ring far from viscose ring is bonded;Protective ring, with the end surface of metal ring far from magnetic ring is bonded.Utilize the high magnetic guide characteristic of metal ring, form magnetic flux closed loop, significantly reduce magnetic resistance, avoid magnetic force line direct penetration electronic equipment, while metal ring will magnetic field line be restrained in its own interior, reduce the magnetization of ferromagnetic material in electronic equipment interior, to inhibit demagnetization field generation, it can reduce the magnetic field interference between magnetic ring and electronic equipment, thereby play the role of long-term keeping the magnetic force of magnetic ring not attenuation and enhancing magnetic force.

The application relates to the technical field of wireless charging, in particular to a magnetic shielding structure and a wireless charging module. The magnetic shielding structure comprises a first edge covering structure layer, a magnetic material layer and a second edge covering structure layer arranged in sequence, wherein the first edge covering structure layer and the second edge covering structure layer are respectively arranged on the two sides of the magnetic material layer, are used for protecting the magnetic material layer, and provide mechanical support and insulation protection; the magnetic material layer is used for providing a low magnetic resistance path and reducing electromagnetic interference; the magnetic material layer comprises a plurality of magnetic core laminates; the plurality of magnetic core laminates are stacked and arranged; the area of the magnetic core laminates located in the middle of the stacking structure of the magnetic material layer is smaller than that of the magnetic core laminates located on the two sides of the stacking structure; and the magnetic core laminates located on the two sides of the stacking structure wrap the magnetic core laminates located in the stacking structure. The magnetic shielding structure can improve the safety of the magnetic shielding structure.

A magnetoresistive random access memory mainly includes a first metal-oxide semiconductor (MOS) transistor and a second MOS transistor disposed on a substrate, a magnetic tunneling junction (MTJ) disposed between the first MOS transistor and the second MOS transistor, a first interlayer dielectric layer disposed on one side of the MTJ and on the first MOS transistor, and a second interlayer dielectric layer disposed on the other side of the MTJ and on the second MOS transistor.

The invention belongs to the technical field of motor equipment, and particularly relates to a reluctance-assisted permanent magnet vernier motor. The magnetic resistance auxiliary type permanent magnet vernier motor comprises a stator structure which comprises a stator iron core with a mounting cavity, an armature winding and a plurality of first permanent magnets, and the first permanent magnets are located in a stator notch and arranged at intervals in the circumferential direction of the stator iron core; the rotor structure comprises a rotor iron core located in the mounting cavity and a rotor shaft connected with the rotor iron core, and a gap is formed between the side surface of the rotor iron core and the inner wall of the mounting cavity; the edge of the rotor core is provided with a plurality of magnetic barrier groups for generating reluctance torque, the plurality of magnetic barrier groups are arranged at intervals along the circumferential direction of the rotor core, the side surface of the rotor core is also provided with a plurality of rotor slots for generating permanent magnet torque based on a magnetic field modulation effect, and the plurality of rotor slots are also arranged at intervals along the circumferential direction of the rotor core. Through effective superposition of the permanent magnet torque and the reluctance torque, the overall torque density and the output torque of the motor are improved.

This invention discloses a wellbore calculation method and related apparatus based on a micro-resistivity scanning imaging logging tool, belonging to the field of petroleum logging technology. The method acquires data from the magnetoresistive sensor array in the micro-resistivity scanning imaging logging tool, first predicts the displacement offset at time K, then calculates the optimal estimate of the displacement offset at time K using the displacement offset at time K, the measured value, and the gain coefficient, and repeats this process cyclically to complete the displacement offset prediction. After predicting the measured value at the current time, the offset prediction calculation is performed segment by segment to obtain the final magnet displacement, and then the wellbore data is calculated. This invention effectively corrects the nonlinear error of the sensor matrix without changing the existing hardware structure, improving the resolution and accuracy of wellbore measurement.

The invention discloses a novel amorphous disc type switched reluctance motor, which is characterized in that according to the technical principle of the reluctance motor, a rotor and a stator of the motor are made into disc shapes by applying the high wear resistance and corrosion resistance of amorphous strips; then, according to the designed motor power, a coil is arranged on the stator, and no coil is arranged on the rotor; and then a power supply is connected, so that the stator of the motor generates a strong magnetic field for high-speed operation. The motor is arranged in an up-and-down structure, and the rotor and the stator have the same diameter. The mass is greatly reduced, so that the required energy consumption is greatly reduced; therefore, the energy-saving effect of the motor is achieved; and meanwhile, the diameter of the rotor is increased, so that the torque of the motor is increased, and the instant explosive force is greatly improved.