It is possible to reduce a current required for
spin injection writing. A
magneto-resistance effect element includes: a first
magnetization pinned layer; a
magnetization free layer; a
tunnel barrier layer; a second
magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-
magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-
magnetic layer is
metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-
magnetic layer is
metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is
metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.