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1203 results about "Ferroics" patented technology

Ferroics is the generic name given to the study of ferromagnets, ferroelectrics, and ferroelastics.

Electric pressure cooker capable of automatically exhausting

InactiveCN105768859ASimplify the automatic exhaust structureShorter drivelinesPressure-cookersMagnetic effectEngineering
The invention provides an electric pressure cooker capable of automatically exhausting. The electric pressure cooker comprises a cooker body, a cooker cover and a control circuit, wherein an exhaust pipe and a gravity hammer which is in sealed contact with the exhaust pipe are arranged on the cooker cover; a first connecting rod is additionally arranged on the cooker cover; a ferromagnetic material is arranged at the first end of the first connecting rod; the position, corresponding to the ferromagnetic material, of the cooker body, is provided with an electromagnet which can take a magnetic effect on the ferromagnetic material; the electromagnetic is electrically connected to the control circuit; the second end of the first connecting rod is in transmitted connection to the gravity hammer; and the gravity hammer is displaced directly or indirectly when the second end of the first connecting rod displaces upwards, and the gravity hammer is separated away from the port of the exhaust pipe. By virtue of the electromagnet and a lever linkage device which are mutually matched, the electric pressure cooker can simplify an automatically exhausting structure, shorten a power transmission route, reduce a probability of a jamming phenomenon in a power transmission process and improve product quality.
Owner:ZHONGSHAN YALESI ELECTRIC CO LTD

Ternary and multi-nary iron-based bulk glassy alloys and nanocrystalline alloys

InactiveUS20050263216A1High glass forming abilityIncreased electrical resistivityMagnetic materialsAmorphous phaseAtomic radius
Disclosed in this invention is a family of ternary and multi-nary iron-based new compositions of bulk metallic glasses which possess promising soft magnetic properties, and the composition selection rules that lead to the design of such new compositions. The embodiment alloys are represented by the formula MaXbZc, where M represents at least one of ferromagnetic elements such as iron and may partly be replaced by some other substitute elements; X is an element or combinations of elements selected from those with atomic radius at least 130% that of iron and in the mean time is able to form an M-rich eutectic; and Z is an element or combinations of elements selected from semi-metallic or non-metallic elements with atomic radius smaller than 86% that of iron and in the meantime is able to form an M-Z eutectic; a, b, c are the atomic percentage of M, X, Z, respectively, and a+b+c=100%. When 1%<b<15% and 10%<c<39%, the alloys show a bulk glass forming ability to cast amorphous ribbons/sheets at least 0.1 mm in thickness. When 3%<b<10% and 18%<c<30%, the alloys show a bulk glass forming ability to cast amorphous rods at least 1 mm in diameter. The amorphous phase of these as-cast sheets/rods is at least 95% by volume. This invention also discloses the existence of nano-crystalline phase outside of the outer regime of the bulk glass forming region mentioned above.
Owner:NATIONAL TSING HUA UNIVERSITY

Magnetoresistive effect element, magentic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device

A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.
Owner:SONY CORP
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