Semiconductor device with: a pair of transistors (110, 120) on a
semiconductor substrate (102); an interconnect structure across the pair of transistors (110, 120), wherein the interconnect structure has the following:
Metal leads (182, 184) and
metal vias (160, 210) arranged above and connected to the pair of transistors (110, 120), and a composite spin-Hall
electrode (340, 530) over the
metal conductors (182, 184) and
metal vias (160, 210), wherein the composite spin-Hall
electrode is electrically connected to the pair of transistors (110, 120) via the metal conductors and metal vias and has a first metal layer (342, 348, 531, 535, 539), a second metal layer (342, 348, 535, 535, 539) and a first spacer layer (344, 532, 536) between the first and the second metal layer, wherein the first metal layer contains a heavy metal in a first mixture of a stable and a metastable state of the heavy metal, the second metal layer contains the heavy metal in a second mixture of the stable and the metastable state of the heavy metal, and the first spacer layer contains a first material that is the first metal layer differs; and a magnetic tunnel contact (270) over the composite spin Hall
electrode (340, 530); wherein the first spacer layer (344, 532, 536) comprises a crystalline metal or a crystalline metal
oxide; and wherein the first spacer layer (344, 532, 536) further comprises an amorphous ferromagnetic material.