83 results about "Magnetic logic" patented technology

A re-programmable gate logic includes a plurality of non-volatile re-configurable resistance state-based memory circuits in parallel, wherein the circuits are re-configurable to implement or change a selected gate logic, and the plurality of non-volatile re-configurable resistance state-based memory circuits are each adapted to receive a logical input signal. An evaluation switch in series with the plurality of parallel non-volatile re-configurable resistance state-based memory circuits is configured to provide an output signal based on the programmed states of the memory circuits. A sensor is configured to receive the output signal and provide a logical output signal on the basis of the output signal and a reference signal provided to the sensor. The reconfigurable logic may be implemented based on using spin torque transfer (STT) magnetic tunnel junction (MTJ) magnetoresistance random access memory (MRAM) as the re-programmable memory elements. The logic configuration is retained without power.

A magnetic logic cell includes a magnetic element having a pinned layer, a free layer, and a spacer layer. The pinned and free layers have pinned and free layer magnetizations. The spacer layer resides between the pinned and free layers. In one aspect, the magnetic logic cell includes a first configuration line that is electrically connected to the magnetic element and carries a first current and a second configuration line electrically that is insulated from the magnetic element and the first configuration line and carries a second current. The first or second current alone cannot switch the free layer magnetization. The first and second currents together can switch the free layer magnetization. When the first current is driven through the magnetic element and the second current is provided, the combination sets the pinned layer magnetization direction. In one aspect, the pinned layer magnetization is set by heating the AFM layer to approximately at or above the blocking temperature. In order to configure the logic cell, an initial direction for the free layer magnetization is also set.

Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.

A magnetic logic element comprises a magnetic logic element cell having; a first and second magnetic parts; a MR intermediate part provided between the first and second magnetic parts. The magnetic logic element further includes a magnetization controlling part that controls a relation of directions of magnetizations of the first and second magnetic parts in accordance with a combination of a first binary input data and a second binary input data. A binary output data can be read by detecting a magnetoresistance effect of the first and second magnetic parts through the MR intermediate part.

The invention relates to a magnetic tunnel junction of a spinel oxide potential barrier, and the application in device thereof. The potential barrier of the magnetic tunnel junction is made of spinel oxides. The tunnel junction may be of a single potential barrier structure or of a double potential barrier structure. The novel single potential barrier magnetic tunnel junction provided by the invention can be applied to a spintronic device and comprises a magneto-dependent sensor, a magnetic random access memory unit, a magnetic logic device unit, a spin transistor and a spin field effect transistor. According to the magnetic tunnel junction based on novel potential barriers, the mismatch degree between a potential barrier layer and a magnetic crystal lattice is quite small, while a high room temperature tunneling magneto-resistor ratio is maintained, the bias dependence feature is quite weak, and the breakdown voltage is improved.

A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

The invention discloses a magnetic random access memory unit based on Rashba effect. The magnetic random access memory unit comprises a magnetic multilayer film memory unit and a bit-writing line. The magnetic random access memory unit is characterized in that the magnetic multilayer film memory unit comprises a substrate, a non-magnetic layer, a core functional layer zone and a covering layer from bottom to top; the core functional layer zone comprises a lower magnetic layer, a medium layer and a upper magnetic layer from bottom to top; the bit-writing line is connected with the non-magneticlayer so that write current flows through the non-magnetic layer transversely and the magnetic torque of the lower magnetic layer is reversed, thus writing data. The invention also provides a programmable magnetic logic device and spinning microwave oscillator with the similar structure based on Rashba effect. The invention realizes the separation of reading and writing, can effectively protect the device from damaging during high current density reading or writing and can effectively reduce the current density and increase the maneuverability of the device; and the invention also adopts the design scheme of closed geometry, thus further reducing the interference of magnetic field to the device.

The present invention relates to a magnetic memory cell, which controls the magnetization direction of the free magnetic layer of a Magnetic Tunnel Junction (MTJ) device using a spin torque transfer, and enables the implementation of a magnetic logic circuit, in which memory and logic circuit functions are integrated. The magnetic memory cell includes an MTJ device (10) including a top electrode (11) and a bottom electrode (13), which are provided to allow current to flow therethrough, and a fixed layer (15) and a free layer (17), which are magnetic layers respectively deposited on a top and a bottom of an insulating layer (19), required to insulate the top and bottom electrodes from each other. A current control circuit (50) controls a flow of current flowing between the top and bottom electrodes, and changes a magnetization direction of the free layer according to an input logic level.

The invention relates to a perpendicular magnetic anisotropic multi-layered film, which comprises a substrate, a bottom layer, a lower magnetic layer, a middle layer, an upper magnetic layer and a covering layer, wherein at least one of the lower magnetic layer and the upper magnetic layer is a composite magnetic layer which consists of a main layer and a transitional layer, the main layer is made of perpendicular magnetic anisotropic material, and the transitional layer is made of magnetic metal material with spin polarization higher than the spin polarization of the perpendicular magnetic anisotropic material, and is positioned between the main layer and the middle layer. When the middle layer is a barrier layer, the composite magnetic layer also can be made of metal material with a spin diffusion length larger than 3nm. Under the premise of guaranteeing excellent perpendicular magnetic anisotropy, the invention can enhance the magnetoresistance property, reduce mutual magnetostatic reaction and decrease the reverse field or reverse current of a corresponding device. The invention is applicable to giant magnetoresistance devices or tunneling magnetoresistance devices, such as magnetic sensors, magnetic random-access memorys and magnetic logic devices.

A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

The invention discloses a magnetic multilayer film as well as a magnetic logic element and a magnetic random access memory thereof. The magnetic multilayer film disclosed by the invention comprises a first antiferromagnetic layer, a first hard magnetic layer, a first non-magnetic metal layer, a second soft magnetic layer, a tunnel barrier layer, a third soft magnetic layer, a second non-magnetic metal layer, a fourth hard magnetic layer and a second antiferromagnetic layer from bottom to top, wherein the third magnetic layer is set to be have a first critical current capable of turning over the magnetization direction of the third magnetic layer and the second magnetic layer is set to be have a second critical current capable of turning over the magnetization direction of the second magnetic layer, and the first critical current is not equal to the second critical current. The magnetic logic element and the magnetic random access memory based on the magnetic multilayer film disclosed by the invention have the advantages of higher read-write speed, relatively small current density required by read-write operation and low consumed power, and energy saving.

Logic circuits based, at least in part, on use of spin-torque transfer (STT) to switch the magnetization—and hence the logic state—of a magnetic material are disclosed. Aspects of the invention include novel STT-based switching devices, new configurations of known STT-based devices into useful logic circuits, common logic circuits and system building blocks based on these new devices and configurations, as well as methods for inexpensively mass-producing such devices and circuits.

The invention discloses a novel stress control-based magnetic logic device. The magnetic logic device is of a composite multilayer film structure, a ferromagnetic film nano wire grows over the center of a linear piezoelectric material film, and two sets of opposite electrodes B1 and B2 are arranged in the middle of a bottom piezoelectric film to be used as input ends of a logic signal level U; in a horizontal plane over the left end of the ferromagnetic nano wire, a conductive nano wire perpendicular to the nano wire direction is used as a magnetic write-in end; an oersted field, generated when a pulse current Iw passes through the conductive nano wire, can change the magnetization direction of the ferromagnetic nano wire underneath, and consequently, a magnetic domain wall is generated in the ferromagnetic nano wire; and the ferromagnetic nano wire is electrified with a control current Ic so as to drive the magnetic domain wall to move along the current direction. The magnetic logic device provided by the invention is based on electric field control, and has the advantages of being low in power consumption and being capable of working at room temperature; and the magnetic logic device can finish a 'NOT' logic function of single input, and 'NAND', 'NOR' and other logic operation functions of dual input or multiple input.

The invention discloses a single-electron magnetic resistance structure and application thereof, such as a spin diode, a spin transistor, a sensor, a magnetic random access memory and a magnetic logic device unit. A GMR (Giant Magnetic Resistance) quantum dot single-electron tunneling magnetic resistance structure comprises a substrate as well as a bottom conducting layer, a first barrier layer, a GMR magnetic quantum dot layer, a second barrier layer and a top conducting layer which are arranged on the substrate. A double-barrier magnetic quantum dot structure comprises a core film layer comprising a bottom electrode, a first barrier layer, a magnetic quantum dot layer, a second barrier layer and a top electrode from bottom to top. Due to the combination with a coulomb blockade effect and a tunneling magnetic resistance effect, the invention controls coulomb energy level resonant tunneling passing through quantum dots by utilizing an external magnetic field to improve tunneling magnetic resistance. The invention can effectively improve the tunneling magnetic resistance effect by utilizing a magnetic resistance design formed by coulomb blockade and improve the signal to noise ratio of device application, and simultaneously reduces tunneling current by utilizing single-electron tunneling, thereby reducing the power consumption of device application.

A magnetic logic element for a logic device is described formed by at least one conduit capable of sustaining and propagating a magnetic soliton, the conduit being adapted by the provision of nodes and/or directional changes giving rise to discontinuities in soliton propagation energy as a result of which logical functions may be processed. Magnetic logic devices such as interconnects and gates, and magnetic logic circuits incorporating such devices and suitable operational fields, are also described.

Spin torque magnetic logic devices that function as memory devices and that can be reconfigured or reprogrammed as desired. In some embodiments, the logic device is a single magnetic element, having a pinned layer, a free layer, and a barrier layer therebetween, or in other embodiments, the logic device has two magnetic elements in series. Two input currents can be applied through the element to configure or program the element. In use, logic input data, such as current, is passed through the programmed element, defining the resistance across the element and the resulting logic output. The magnetic logic device can be used for an all-function-in-one magnetic chip.

A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on a first analog input to the circuit. Each MTJ is electrically connected to a first and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of the MTJs varies based on the magnetic field. The circuit is configured to mix the first analog input and a second analog input to generate an analog output based on the output of the second output terminal.