104 results about "Spintronics" patented technology

The invention discloses a ternary magnetic selenide and a preparation method of a single crystal of the ternary magnetic selenide, and relates to the technical field of crystal material preparation. The chemical formula of the ternary magnetic selenide is VCrSe3, and the ternary magnetic selenide can be prepared by taking a vanadium source, a chromium source and a selenium source in a specific proportion as raw materials and an iodine source as a transport agent through a chemical vapor transport method. The crystal structure of the VCrSe3 single crystal is a monoclinic phase (I2 / m), and phase transformation from antiferromagnetic to ferromagnetic and spin reorientation occur at low temperature, so that the VCrSe3 single crystal has application potential in the fields of spintronics, optoelectronics and the like; the large-size and high-quality VCrSe3 single crystal prepared by the method can provide a material for intrinsic physical property research and development of functional devices such as optoelectronic devices and spinning electrons.

The invention provides a method for measuring magneton dispersion of an antiferromagnetic thin film material based on a terahertz spectrum. According to the method, a ferromagnetic metal layer sample, an antiferromagnetic layer sample, a heavy metal layer sample and a three-layer film structure sample are prepared, laser pulses are used for inducing the samples to emit terahertz spectra, an electro-optical sampling technology is combined for measurement, and contribution of magneton transmission to the terahertz spectra is separated through data processing. The invention aims to solve the problem that the magneton dispersion property of an antiferromagnetic thin film material cannot be measured in real time at low cost in the prior art. Compared with a traditional method, the method has the advantages of being wide in frequency spectrum range, high in wave number resolution ratio, free of contact and low in cost, and is suitable for different types of antiferromagnetic materials. The method provides a theoretical basis and an experimental basis for researching the spin dynamic characteristics of an antiferromagnetic material and developing a high-frequency spintronics device. The method effectively fills the technical blank in the field of magneton measurement of the antiferromagnetic material.

The invention discloses a vertical exchange bias structure and a preparation method thereof, and belongs to the technical field of information technology and spintronics, the preparation method of the vertical exchange bias structure comprises the following steps: fixing a substrate on a substrate table of a vacuum sputtering chamber, adjusting the vacuum degree, and sputtering a buffer layer on the upper surface of the substrate; sequentially sputtering a seed layer, a magnetic layer, an interface magnetic layer, an antiferromagnetic layer and a protective layer on the upper surface of the buffer layer to obtain the vertical exchange bias structure; the interface magnetic layer is Pt / CoFe, the period is 1, the sputtering power of the CoFe layer is 10W, and the sputtering air pressure is 0.7 Pa. According to the method, the exchange bias effect of the magnetic film is regulated and controlled by changing the characteristics and growth conditions of the interface magnetic layer, the overall magnetism of the magnetic layer is kept unchanged, and the method has important guiding significance for designing the structures of magnetic materials and devices.

The invention provides a magnetic heterojunction structure for current-spin current conversion, a spin electronic device and a preparation method. The magnetic heterojunction structure comprises a substrate, a first electrode, a second electrode, a third electrode and a fourth electrode, the magnetic heterojunction is formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, and the non-magnetic layer is an alloy layer formed by a material of a group IIIA element and a material of a group VA element in a periodic table of elements; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. Compared with the prior art, the method has the advantages that a high-quality magnetic heterojunction structure can be obtained by using the prepared high-quality III-V group alloy film by utilizing the contribution of the spin current from the P orbit, so that a high-quality electronic device is obtained, a way is opened up for improving the spin current efficiency, and the range of materials which can be applied to spintronics is expanded.

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

The invention discloses a magnetic multilayer film device based on spin orbit torque and a preparation method, and relates to the technical field of spintronics, and the device is composed of a Hall bar composed of a magnetic multilayer film and a Ti / Au composite electrode. Wherein the magnetic multilayer film is composed of a buffer layer, a heavy metal layer, a ferromagnetic layer and an oxide covering layer. In the invention, the buffer layer is tantalum; the heavy metal layer is platinum-holmium alloy; the ferromagnetic layer is cobalt iron boron; and the covering layer is magnesium oxide. According to the invention, the spin Hall angle of the SOT device is improved, and the energy consumption of the device is reduced. When a device is subjected to in-situ annealing, a sample table with an adjustable angle is used for constructing a temperature gradient to realize SOT-based magnetization overturning without in-plane field assistance, and a brand new technical route is provided for subsequent research and development of SOT-MRAM.

The invention discloses a method for reducing critical current density in SOT driving magnetization overturning, and relates to the technical field of spintronics, and the method comprises the following steps: building a structure model of a magnetic film which is of a double-layer structure, symmetrically arranging two defect areas on the magnetic layer along the x-axis direction, the physical parameter value of the defect area is smaller than that of the magnetic layer; the junction of the magnetic layer and the defect region is a domain wall; the structure model is subjected to micro-magnetic simulation, a magnetic domain and domain wall evolution process is obtained, the critical current density in SOT driving magnetization overturning is determined based on the evolution process, the critical current density is the minimum current density for driving domain wall movement, and the maximum current density is the minimum current density for driving domain wall movement. And the SOT effective field generated by the critical current density is the minimum SOT effective field required for unpinning the domain wall from the defect area. The method can be compatible with the existing micro-nano electronic process and material system.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention belongs to the technical field of preparation means of functional materials, and particularly relates to a CrSb single crystal film and a preparation method for preparing a staggered magnetic CrSb single crystal film through molecular beam epitaxy. The CrSb single crystal thin film sequentially comprises a substrate SiC / a buffer layer CrTe2 / CrSb single crystal thin film from bottom to top, and when the crystal orientation of the CrSb single crystal thin film is (0001), the CrSb single crystal thin film has six-degree symmetry. A Cr source and an Sb source are placed in different evaporation sources respectively, and evaporated Cr and Sb atoms are deposited on the surface of the SiC (111) substrate subjected to surface treatment in an ultrahigh vacuum environment. The deposition rate of Cr atoms is # imgabs0 # / min; the deposition rate ratio of Cr to Sb atoms is 1: 12; and the surface temperature of the SiC (111) substrate is 370 DEG C to 400 DEG C. According to the method, the staggered magnetic CrSb single crystal film is controllably synthesized by controlling the deposition rate of raw materials and the surface temperature of a substrate on the basis of cooperative control among the processes; the staggered magnetic CrSb single crystal film with the hexagonal crystal structure prepared by the method has an atomic-scale flat surface and excellent crystal orderliness, can meet the performance requirements of spintronics device preparation, and is suitable for subsequent scientific research.

The invention discloses a memory based on electric control interlayer anti-ferromagnetic Nell vector flipping and an implementation method thereof. On the basis of the synergistic effect of the orbit transfer torque and the spin transfer torque, the memory for electrically controlling the interlayer antiferromagnetic neel vector flipping is realized, and the memory has remarkable advantages; according to the invention, read-write paths are separated, so that lower power consumption and higher operation speed can be realized; the antiferromagnetic material has high stability in an external field, a stray field is almost zero, and the antiferromagnetic material has high-frequency magnetization overturning capability, so that the antiferromagnetic material has huge application potential in the aspect of an ultrafast high-density magnetic memory device; when the electric control interlayer antiferromagnetic neel vector flipping device based on the synergistic effect of the orbital transfer torque and the spin transfer torque realizes magnetization flipping, not only is a more efficient and low-power-consumption solution provided, but also the structure is simple and the integration is easy. The method has huge potential and application prospects in modern storage and logic device application, and shows huge potential in the field of antiferromagnetic spintronics.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

The invention discloses a method for regulating and controlling the exchange bias performance of Ni-Mn-based alloy in dual modes by changing the homogenization cooling rate and the aging time, and belongs to the technical field of functional metal materials and spintronics. The invention aims to solve the technical problems that the existing Ni-Mn-based alloy excessively depends on component adjustment in the construction of the exchange bias effect, the exchange bias field / coercive force is difficult to configure as required, and the bias level still needs to be improved. The method comprises the following steps: 1, component design and smelting; 2, pipe sealing treatment of the alloy to be subjected to heat treatment; 3, homogenizing treatment and cooling; and 4, aging treatment. The method is used for changing the homogenizing cooling rate and the aging time to regulate and control the exchange bias performance of the Ni-Mn-based alloy in the dual mode.

The invention belongs to the field of spinning electronics, and particularly relates to a method for constructing a magnetic golf version based on Skyrmion. A traditional golf plate is a classical statistical model for researching particle stochastic dynamics under ideal equal probability hypothesis, and an artificial spin network is introduced into an ultrathin ferromagnetic film, and is similar to a nanoscale magnetic golf plate. The result shows that when the external magnetic field oscillates at the lowest frequency of Skyrmion rotation, the output distribution presents standard Gaussian distribution, and the result of a traditional golf plate is reproduced. Random response of the magnetic golf plate can be achieved by adjusting the direction of the applied magnetic field and modifying the local geometry. It is notable that when a magnetic field of higher frequency is applied, the distribution deviates from the Gaussian distribution, which can be interpreted as a disruption of an equal probability hypothesis due to a phase gradient between adjacent skyrmions. The method provides a basis for understanding the random characteristics of the Skyrmion cluster and potential application of the Skyrmion cluster in future neural network calculation.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The invention belongs to the field of synthesis and preparation of Schiff base single crystals, and particularly relates to a p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal and a preparation method thereof. The p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal is a Schiff base formed by condensation of one molecule of p-phthalaldehyde and two molecules of 4-amino-3-methylphenol, and is a completely symmetrical bis-Schiff base, and the molecular structural formula of the p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal is C22H20N2O2. The compound has good optical performance, can be used as a reaction intermediate product for synthesis of epoxy resin, and has important significance for research of high-thermal-conductivity epoxy resin; and the new single crystal can show excellent photoelectric properties, thermal stability or magnetism, and promotes the innovation of photoelectric devices or spintronics devices.

The application relates to a method for improving spin injection efficiency by using a buffer layer, relating to spintronics. A long strip-shaped single-layer graphene is prepared on a silicon substrate, a double-layer h-BN is prepared and transferred onto the single-layer graphene as a tunneling layer, PMMA is spin-coated, a ferromagnetic electrode shape is exposed by using an EBL system, and development is carried out after the exposure is completed; the sample is placed into an electron beam / thermal evaporation composite plating film system, a low-melting-point metal indium is pre-evaporated as a buffer layer by using a thermal evaporation method, cobalt is electron beam evaporated as a ferromagnetic electrode, an In / Co miscible alloy interface is formed by annealing at 200 DEG C under an argon atmosphere for 1 h, and a spin valve device with a buffer layer is obtained. The method forms a lossless interface of a ferromagnetic electrode layer-buffer layer-tunneling layer, and spin injection efficiency is improved. The method is easy to realize, low in cost, low in operation difficulty and technical requirement, and beneficial to large-scale industrial application; the method is very good in universality, and can be popularized to other spin electronic devices with a tunneling layer to improve the spin injection efficiency of the devices.

Disclosed are a spin-orbit torque material and device, and use of a delafossite oxide thin film, which relate to the field of spintronics. A chemical formula of the spin-orbit torque material is ABO2; wherein A and B are different heavy metal atoms, O is an oxygen atom, and a ratio between the numbers of A, B, and O atoms is 1:1:2. The spin-orbit torque material of an embodiment of the present application has higher spin-orbit torque efficiency and lower resistivity, and can reduce the power consumption of a spin-orbit torque device when it is used in the device.

This application discloses a method, apparatus, device, medium, and program product for measuring the effective field of spin orbital moments, relating to the field of spintronics technology. The method includes: acquiring a target sample of an in-plane magnetically anisotropic thin film; applying a current to the target sample along a first direction parallel to the target sample; and applying a scanning magnetic field to the target sample in a second direction perpendicular to the first direction, wherein the first direction is the current direction and the second direction is a direction perpendicular to the current direction within the plane; during the application of the scanning magnetic field, detecting the voltage of the target sample under the scanning magnetic field, and obtaining a second-order magnetoresistance curve of the resistance to the magnetic field corresponding to the voltage; and determining the effective field of the spin orbital moments of the target sample based on the offset of the magnetic field values ​​corresponding to characteristic points on the second-order magnetoresistance curve under different current conditions. This application achieves high-precision and high-reliability measurement of the effective field of the spin orbital moments of an in-plane magnetically anisotropic thin film without relying on the first-order curve morphology and avoiding temperature drift interference.

This invention provides an organic eutectic material with a controllable charge-transfer exciton diffusion coefficient and its preparation method. The molecular formula of this organic eutectic material is (TSB). x (TSB-Br) 1‑x (TCNB)2, wherein TSB is trans-1,2-stilbene, TSB-Br is trans-4-bromostilbene, TCNB is 1,2,4,5-phenylenetetraacetonitrile, and x is the proportion of TSB molecules. The organic eutectic material prepared by this invention has a regular morphology, high crystallinity, and exhibits both strong and delayed fluorescence emission, with continuously tunable diffusion coefficients for singlet and triplet charge-transfer excitons. The preparation method described in this invention has advantages such as low raw material cost, mild conditions, and simple operation. The prepared (TSB)2... x (TSB-Br) 1‑x (TCNB)2 organic eutectic materials have potential applications in fields such as imaging, photoelectric conversion, and spintronics.

This application discloses an ion qubit addressing system and a method for addressing ion qubits. The ion qubit addressing system includes a control module, a spintronic device array, and a surface-chip ion trap. The control module is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements. The spintronic device array is configured to determine a local magnetic field network based on the electrical signal control sequence. The surface-chip ion trap is configured to control the transition frequency of the ion qubits based on the local magnetic field network, enabling the ion qubit addressing system to address qubits according to the transition frequency. This overcomes the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, thus improving addressing efficiency. Furthermore, controlling the transition frequency of the ion qubits allows different ion qubits to acquire unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

A spintronics device 1 is provided with a generation layer 4 which is for generating a spin current and in which Al and Si are present in a mixed manner. The generation layer 4 includes a region in which variation in the composition ratios of Al and Si is within 20% of the respective average values thereof in the layer thickness direction of the generation layer 4.

The application relates to the technical field of spin electronics devices and quantum information devices, and provides a superconductor-spin switchable device and a superconductor-spin switching method.The device comprises a magnetic layer and a non-magnetic layer; the magnetic layer has perpendicular magnetic anisotropy; and the non-magnetic layer is a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; under the condition of being lower than a first temperature, the In-Bi-based alloy layer has superconducting characteristics; and under the condition of being higher than the first temperature, the In-Bi-based alloy layer can realize current-spin current conversion.The application can realize a new type of functional material and a device thereof which can exhibit superconducting characteristics and high-efficiency current-spin current conversion capability in the same material system, break through the limitation of separation of traditional superconducting materials and spin materials, and realize integrated and cooperative work of the two.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The invention provides a wide-band-gap ferromagnetic insulator material. The chemical formula of the wide-band-gap ferromagnetic insulator material is Cd2CrSbO6. The invention also provides a method for preparing the wide-band-gap ferromagnetic insulator material, which comprises the following steps: (1) sufficiently grinding and mixing CdO, Cr2O3 and Sb2O5 in a protective gas atmosphere to obtain a mixture; (2) sealing and wrapping the mixture, and then carrying out heating and pressurizing treatment; and (3) cooling and depressurizing the treated product obtained in the step (2). The ferromagnetic insulator material Cd2CrSbO6 disclosed by the invention has a potential application value in spintronics devices.

The present invention provides a chromium-based copper spinel chalcogenide thin film material and a preparation method thereof, relating to the technical field of spintronics material preparation. The preparation method described in the present invention first adopts a vacuum sealing process to synthesize a CuCr2X4 powder material under a positive X vapor pressure, and then mixes the obtained powder material with an appropriate amount of X powder and sinters it in a low-temperature argon atmosphere to make an X-rich CuCr2X4 target material; then adopts a laser pulse deposition technology to bombard the X-rich CuCr2X4 target material with a high-energy pulse laser, generate a certain X vapor partial pressure in the vacuum chamber, and promote the CuCr2X4 film to become a spinel phase on a high-temperature substrate, so as to achieve stable preparation of the chromium-based copper spinel chalcogenide thin film material. The chromium-based copper spinel chalcogenide thin film material prepared by the present invention has high crystallinity, is ferromagnetic at room temperature (300K), and has a saturation magnetization intensity of 150-250emu / cm 3 , the size meets the needs of spin electronic devices.

The invention provides a rotatable self-focusing type spintronics terahertz source, and belongs to the technical field of terahertz application and optical application, the rotatable self-focusing type spintronics terahertz source comprises a main support, a rotating disc, a spintronics terahertz source heterojunction film-lens system and a permanent magnet, the rotating disc is internally provided with rotating disc threads, the spintronics terahertz source heterojunction film-lens system is connected with the rotating disc through the rotating disc threads, rotating disc two-side threaded holes are formed in the two centrosymmetric sides of the rotating disc, and the permanent magnet is connected with the rotating disc through the rotating disc two-side threaded holes. By adopting the rotatable self-focusing type spintronics terahertz source, the problems of a traditional terahertz source in the aspects of power loss, system integration level, power density, focusing effect, thermal stability and radiation area are solved.

The invention provides a material with a complete magnetic compensation effect and high longitudinal spin polarization and a preparation method and application thereof, the chemical formula of the material is Mn2-aVaFe1-bXbGa1-cYc, X is selected from one or more of Cu, Ni, Co, Cr and Ti, and Y is selected from one or more of Al, Ge, In, Si, Pb, Sb and Sn. The material provided by the invention has high longitudinal spin polarization, high spin polarization and a complete compensation effect, and is a series of magnetic semi-metal Heusler materials substituted by different elements; the Curie temperature, the magnetic compensation temperature, the longitudinal electric transport property, the Hall parameter and other performances of the material can be optimized and continuously adjustable through regulation and control of mechanisms such as components and temperature, and the material has a complete compensation effect. Therefore, the material has wide application prospects in spin polarization injection, magnetic sensors, field-effect tubes, magnetic random memories and other spintronics devices.

The invention discloses a magnetic Weel semimetal single crystal with novel quantum oscillation as well as a preparation method and application of the magnetic Weel semimetal single crystal. The single crystal is prepared by adopting a self-dissolution method, the chemical formula of the single crystal is PrAlSi, the single crystal structure belongs to a LaPtSi-type tetragonal crystal system, the space group is non-centrosymmetric I41md (No.109), a magnetic test shows the ferromagnetic ground state characteristic of the PrAlSi single crystal, and the ferromagnetic ground state characteristic and the ferromagnetic ground state characteristic indicate that the PrAlSi single crystal is a novel magnetic Weil semi-metal material of which the space inversion symmetry and the time inversion symmetry are broken at the same time. Therefore, the single crystal system has a stable foreign state. The PrAlSi single crystal shows obvious resistivity-temperature quantum oscillation, which is a novel quantum oscillation behavior and is derived from destructive interference between SdH oscillation of a spin splitting Fermi surface caused by strong exchange interaction of Weyl Fermi-4f electrons. The magnetic Weel semimetal single crystal with the stable Weel state and the novel quantum oscillation has a good application prospect in the aspects of spintronics devices and sensors.