14 results about "Spintronics" patented technology

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

This invention provides an organic eutectic material with a controllable charge-transfer exciton diffusion coefficient and its preparation method. The molecular formula of this organic eutectic material is (TSB). x (TSB-Br) 1‑x (TCNB)2, wherein TSB is trans-1,2-stilbene, TSB-Br is trans-4-bromostilbene, TCNB is 1,2,4,5-phenylenetetraacetonitrile, and x is the proportion of TSB molecules. The organic eutectic material prepared by this invention has a regular morphology, high crystallinity, and exhibits both strong and delayed fluorescence emission, with continuously tunable diffusion coefficients for singlet and triplet charge-transfer excitons. The preparation method described in this invention has advantages such as low raw material cost, mild conditions, and simple operation. The prepared (TSB)2... x (TSB-Br) 1‑x (TCNB)2 organic eutectic materials have potential applications in fields such as imaging, photoelectric conversion, and spintronics.

The application relates to the technical field of spin electronics devices and quantum information devices, and provides a superconductor-spin switchable device and a superconductor-spin switching method.The device comprises a magnetic layer and a non-magnetic layer; the magnetic layer has perpendicular magnetic anisotropy; and the non-magnetic layer is a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; under the condition of being lower than a first temperature, the In-Bi-based alloy layer has superconducting characteristics; and under the condition of being higher than the first temperature, the In-Bi-based alloy layer can realize current-spin current conversion.The application can realize a new type of functional material and a device thereof which can exhibit superconducting characteristics and high-efficiency current-spin current conversion capability in the same material system, break through the limitation of separation of traditional superconducting materials and spin materials, and realize integrated and cooperative work of the two.

This invention discloses a quasi-cage-like lattice Fe₂Ge single crystal exhibiting room-temperature anomalous Hall effect and topological Hall effect, and its growth method. The Fe₂Ge single crystal has a quasi-cage-like crystal structure, wherein magnetic Fe atoms are... ab The projections of the surfaces form a quasi-cage pattern. A chemical vapor deposition method is employed, using halogens or halogen compounds as transport agents, to grow the crystal within a temperature range of 750 °C to 950 °C. The grown Fe₂Ge single crystals are bulky, possess a metallic luster, and have millimeter-scale dimensions. These single crystals exhibit high-temperature ferromagnetism, with an anomalous Hall conductivity of no less than 488.50 Ω at room temperature. ‑1 · cm ‑1 The topological Hall resistivity at room temperature is not less than 0.35 μΩ·cm, which has great potential application value in spintronic devices such as room temperature anomalous Hall sensors and magnetic sensors. Furthermore, the crystal growth method disclosed in this invention has advantages such as simple growth equipment, low cost, and suitable growth temperature, making it suitable for industrial production.

The application provides a magnetic heterojunction structure for current-to-spin current conversion, a spintronic device and a preparation method, and the magnetic heterojunction structure comprises a substrate and a magnetic heterojunction formed on the substrate, the magnetic heterojunction comprises a ferromagnetic layer and a non-magnetic layer, the non-magnetic layer is an alloy layer formed by a material of a group IIIA element in the periodic table and a material of a group VA element; wherein the ferromagnetic layer has perpendicular magnetic anisotropy. The application can utilize the contribution from P-orbital spin current, utilize the prepared high-quality III-V alloy thin film to obtain a high-quality magnetic heterojunction structure, and thus obtain a high-quality electronic device, open up a path for improving spin current efficiency, and further expand the range of materials that can be used for spintronic applications.

This invention belongs to the field of spintronics technology, and specifically discloses a Hessler alloy with adjustable damping factor and its preparation method. The preparation method includes preparing a Hessler alloy thin film on a substrate; applying a voltage to a piezoelectric ceramic to put the piezoelectric ceramic in a stretched state; attaching the substrate with the Hessler alloy thin film to the stretched piezoelectric ceramic, with the easy magnetization axis direction [110] of the Hessler alloy thin film parallel to the stacking direction of the piezoelectric ceramic; removing the voltage to obtain a Hessler alloy with adjustable damping factor in a compressed state. This invention achieves low-power, reversible control of the damping factor of the Hessler alloy through piezoelectric strain, and is applicable to fields such as magnetic random access memory, spin logic devices, and flexible magnetic sensors.

This invention provides a ferromagnetic material, its preparation method, and its applications. The ferromagnetic material of this invention comprises Fe. 1+x Te, where 0.4 ≤ x ≤ 0.8, and the Curie temperature Tc of the ferromagnetic material is 273 K ~ 310 K. The preparation method of the ferromagnetic material of the present invention includes the following steps: using chemical vapor transport, a vacuum-sealed quartz tube containing Fe powder, GaTe powder, Te powder and a transport agent is heated to obtain Fe... 1+x Te, 0.4≤x≤0.8; wherein, the molar ratio of Fe powder, GaTe powder, and Te powder is (2.5~3.5):(0.5~1.5):1; the heat treatment includes: the heating temperature of the raw material zone is 825~875℃, and the heating temperature of the product formation zone is 725~775℃. The ferromagnetic material of the present invention has a Curie temperature above room temperature, the preparation method is simple, and it has broad application prospects in the field of spintronics.

The application belongs to the field of spin electronics and information technology, and provides a chiral / magnetic heterojunction device with exchange bias effect and a preparation method thereof, which comprises a substrate, a ferromagnetic material layer and a chiral material layer, and the ferromagnetic material layer and the chiral material layer are directly contacted and stacked and then placed above the substrate. Different chiral configurations of the chiral material layer correspond to different polarities of the exchange bias effect. The realization of the exchange bias effect is not limited by the types and preparation sequences of the ferromagnetic material layer and the chiral material layer, and through selection of chiral material layers with different configurations, the customized regulation and control of the polarity of the exchange bias effect can be realized, thereby providing a novel and feasible technical approach for realizing high-stability exchange bias effect.

The application discloses a long short-term memory neural network circuit based on spintronics and a control method, which comprises an input circuit, a weight circuit and an activation function circuit. The input circuit utilizes a magnetic domain wall-magnetic tunnel junction device to realize time integration of the current time input and the previous time state by analog control of the magnetic domain wall position. The weight circuit comprises a cross array composed of multi-state magnetic domain wall-magnetic tunnel junction devices, wherein the synaptic weight is non-volatile stored as a discrete magnetic domain wall position defined by a photolithography notch. The weight circuit performs a matrix vector multiplication operation in the analog domain. The activation function circuit comprises a random magnetic tunnel junction device, which provides a nonlinear activation function by utilizing the voltage-dependent probability flipping characteristics of the random magnetic tunnel junction device. The application does not need a memristor and a conventional CMOS logic to realize the core LSTM operation, thereby significantly reducing the hardware area, power consumption and delay.

The application provides a semi-metal compensation ferrimagnetic material, the chemical formula of the semi-metal compensation ferrimagnetic material is CrFeS2, the semi-metal compensation ferrimagnetic material has a hexagonal NiAs type crystal structure and belongs to the 194th space group, and a preparation method thereof comprises the following steps: sealing Cr powder, Fe powder and sulfur blocks and a transmission medium iodine in a vacuum quartz tube; placing the vacuum quartz tube in a heating furnace and heating at 780-920 DEG C for 4-30 days, and then quenching to a warm house. The semi-metal compensation ferrimagnetic material provided by the application has the characteristics of great perpendicular magnetic anisotropy and magnetic compensation characteristics, so that the material can realize zero-field cold exchange bias, and a unidirectional magnetic field with different sizes can control the direction of the exchange bias, and thus the material has a wide application prospect in the field of spintronics.

A kind of test system, method and magneto-optical kerr effect criterion method of high-order magneto-optical kerr effect in ferromagnetic film belong to the field of spintronics and magneto-optics. By building a magneto-optical kerr detection light path, the direction of the external magnetic field is regulated by the quadrupole magnet to regulate the magnetic moment direction of the sample, and the light intensity change curve under the rotating magnetic field is detected by the photodetector. Whether the sample has second-order magneto-optical kerr effect (QMOKE) is characterized, and the intensity is quantitatively observed. The method only needs a single light intensity change curve obtained by vertical incidence as the characterization basis of QMOKE, and the measurement method of small step (5°) rotation of external magnetic field comprehensively characterizes the influence of magnetic field direction on QMOKE signal, and can calculate QMOKE intensity according to amplitude, simplifies the steps of separating first-order magneto-optical kerr effect (LMOKE) and QMOKE, and simplifies the characterization criterion of QMOKE effect of ferromagnetic film system, especially Fe structure film.

The application belongs to the technical field of condensed matter physics and spintronics, and more particularly relates to CeSn 0.75 The application relates to the application of Sb2 single crystal material in magnetoresistance sensors and spin valve devices. The single crystal material has a significant angular magnetoresistance effect under an applied magnetic field, and the resistivity peak is strictly aligned with the high symmetry axis direction of the crystal, and is suitable for preparing high-sensitivity magnetoresistance sensors. Meanwhile, the magnetoresistance of the material under the hydrostatic pressure changes with the magnetic field intensity, and can realize the reversible high / low resistance state switching, and exhibits a natural spin valve giant magnetoresistance effect. The application breaks the dependence of traditional spin valve devices on ferromagnetic / non-magnetic complex multi-layer heterostructures, and only uses the intrinsic properties of a single material to realize high-sensitivity magnetoresistance state regulation, has the advantages of simple preparation process and flexible regulation means, and has important application value in the fields of novel single crystal spin electronic devices, small magnetic bias angle detection and high-density magnetic memory.

An abnormal Hall sensor based on a large abnormal Hall material, comprising an electrode layer and a Hall device, the electrode layer is used to power or transmit signals for the Hall device, wherein the Hall device is made of a material with a large abnormal Hall effect with a thickness of 5-100 nm, and the chemical formula of the material with a large abnormal Hall effect is: Co 3‑x M x Sn 2‑y N y S 2‑z T z The Hall device is a magnetic topological thin film / nanosheet material, which has a large abnormal Hall effect, a giant abnormal Hall resistivity, an abnormal Hall conductivity and a giant abnormal Hall angle characteristic. The abnormal Hall sensor prepared by using the same has high sensitivity, low noise and excellent magnetic field detection capability. The device has a wide application prospect as a logic, storage and other spintronic device.