62 results about "Spintronics" patented technology

The invention belongs to the technical field of spintronics devices, and particularly relates to a vertical magnetization ferromagnetic layer field-free flipping method in an orbital electronics device. In the prior art, an orbital electronic device has the problem that a current-induced vertical magnetization ferromagnetic layer needs an external magnetic field to assist in overturning, which greatly limits the actual application of the orbital electronic device. In order to solve the problem, two technical schemes are provided, one scheme is that a wedge-shaped substrate is coated with a film, and the other scheme is that an antiferromagnetic layer is inserted between a track source layer and the substrate. According to the two technical schemes, the symmetry of the system can be broken through, and field-free overturning of the perpendicular magnetization ferromagnetic layer in the track electronics device is finally achieved.

The invention discloses a quaternary ferrocolumbium cobalt sulfide crystal, a preparation method and application, and belongs to the technical field of magnetic materials, the quaternary ferrocolumbium cobalt sulfide crystal has remarkable in-plane and out-of-plane magnetic anisotropy, and the chemical general formula of the quaternary ferrocolumbium cobalt sulfide crystal is Nb3 (Fe, Co) S6; the preparation method comprises the following steps: (1) preparing and packaging raw materials; (2) vacuum packaging; (3) carrying out CVT reaction; and (4) cooling and sampling. An improved double-temperature-zone chemical vapor transport (CVT) method is adopted, and a proper transport agent is selected, so that a multi-component raw material can be transported and recrystallized in a gaseous form at a relatively low temperature, and a single crystal with uniform components and a complete structure is obtained. The material can be applied to spintronics devices, high-density magnetic storage units and magnetic sensors; and a new platform is provided for researching complex magnetic interaction, magnetic anisotropy sources, potential superconductivity, topological properties and the like.

The invention relates to a method for the formation of skyrmions or Néel-type spin textures in a ferromagnetic material, preferably in a ferromagnetic alloy, comprising the steps of (i) providing an underlayer material, (ii) depositing a film of a ferromagnetic material thereon in a manner that (iii) the film obtained shows a vertical strain gradient (I), where ε t is the strain along the normal to the plane of the deposited film, and further to the materials so prepared and to their use in spintronics technology.

The invention discloses a method for regulating and controlling the exchange bias performance of Ni-Mn-based alloy in dual modes by changing the homogenization cooling rate and the aging time, and belongs to the technical field of functional metal materials and spintronics. The invention aims to solve the technical problems that the existing Ni-Mn-based alloy excessively depends on component adjustment in the construction of the exchange bias effect, the exchange bias field / coercive force is difficult to configure as required, and the bias level still needs to be improved. The method comprises the following steps: 1, component design and smelting; 2, pipe sealing treatment of the alloy to be subjected to heat treatment; 3, homogenizing treatment and cooling; and 4, aging treatment. The method is used for changing the homogenizing cooling rate and the aging time to regulate and control the exchange bias performance of the Ni-Mn-based alloy in the dual mode.

The invention provides a microwave phase measurement system based on magneton-photon coupling characteristics. According to the system, an integrated electrode support / GGG / YIG / Pt multilayer structure is embedded in a microwave cavity, and magnetons carry microwave phase information through coupling of the magnetons and photons in the YIG. Magneton precession of the YIG layer causes spin current to be generated in the Pt layer, the spin current is converted into measurable voltage signals through inverse spin Hall effect, and high-resolution phase measurement is realized by means of frequency mixing, coherent detection and the like. The method is high in anti-interference capability, can realize high-sensitivity and low-cost microwave phase measurement, and is expected to be used in the fields of spintronics, microwave measurement, quantum information reading and the like.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The application belongs to the technical field of spintronics, and specifically forms a vortex of electron drift velocity at the interface of a magnetic layer and a metal layer by a difference in conductivity, further utilizes a spin vortex coupling effect to realize conversion of charge current to spin current, and thereby drives a magnetic moment to flip through a spin-orbit moment. As an example, the application deposits a Cu layer with high conductivity on a PtCo alloy layer with lower conductivity through magnetron sputtering, and constructs a heterostructure with a PtCo / Cu interface spin vortex coupling effect. By increasing the thickness of the Cu layer to improve the conductivity of the Cu layer, a significant improvement in the orbital moment efficiency can be observed. Not only does this provide valuable experimental evidence for in-depth understanding of the physical mechanism of interface-induced spin current, but also enriches the conversion approach between charge current and spin current, and opens up a simple and efficient new path for the research and design of a new generation of spintronic devices.

The invention belongs to the field of synthesis and preparation of Schiff base single crystals, and particularly relates to a p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal and a preparation method thereof. The p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal is a Schiff base formed by condensation of one molecule of p-phthalaldehyde and two molecules of 4-amino-3-methylphenol, and is a completely symmetrical bis-Schiff base, and the molecular structural formula of the p-xylylene-bis (4-amino-3-methylphenol) Schiff base single crystal is C22H20N2O2. The compound has good optical performance, can be used as a reaction intermediate product for synthesis of epoxy resin, and has important significance for research of high-thermal-conductivity epoxy resin; and the new single crystal can show excellent photoelectric properties, thermal stability or magnetism, and promotes the innovation of photoelectric devices or spintronics devices.

The application relates to a method for improving spin injection efficiency by using a buffer layer, relating to spintronics. A long strip-shaped single-layer graphene is prepared on a silicon substrate, a double-layer h-BN is prepared and transferred onto the single-layer graphene as a tunneling layer, PMMA is spin-coated, a ferromagnetic electrode shape is exposed by using an EBL system, and development is carried out after the exposure is completed; the sample is placed into an electron beam / thermal evaporation composite plating film system, a low-melting-point metal indium is pre-evaporated as a buffer layer by using a thermal evaporation method, cobalt is electron beam evaporated as a ferromagnetic electrode, an In / Co miscible alloy interface is formed by annealing at 200 DEG C under an argon atmosphere for 1 h, and a spin valve device with a buffer layer is obtained. The method forms a lossless interface of a ferromagnetic electrode layer-buffer layer-tunneling layer, and spin injection efficiency is improved. The method is easy to realize, low in cost, low in operation difficulty and technical requirement, and beneficial to large-scale industrial application; the method is very good in universality, and can be popularized to other spin electronic devices with a tunneling layer to improve the spin injection efficiency of the devices.

This application discloses a method, apparatus, device, medium, and program product for measuring the effective field of spin orbital moments, relating to the field of spintronics technology. The method includes: acquiring a target sample of an in-plane magnetically anisotropic thin film; applying a current to the target sample along a first direction parallel to the target sample; and applying a scanning magnetic field to the target sample in a second direction perpendicular to the first direction, wherein the first direction is the current direction and the second direction is a direction perpendicular to the current direction within the plane; during the application of the scanning magnetic field, detecting the voltage of the target sample under the scanning magnetic field, and obtaining a second-order magnetoresistance curve of the resistance to the magnetic field corresponding to the voltage; and determining the effective field of the spin orbital moments of the target sample based on the offset of the magnetic field values ​​corresponding to characteristic points on the second-order magnetoresistance curve under different current conditions. This application achieves high-precision and high-reliability measurement of the effective field of the spin orbital moments of an in-plane magnetically anisotropic thin film without relying on the first-order curve morphology and avoiding temperature drift interference.

This invention provides an organic eutectic material with a controllable charge-transfer exciton diffusion coefficient and its preparation method. The molecular formula of this organic eutectic material is (TSB). x (TSB-Br) 1‑x (TCNB)2, wherein TSB is trans-1,2-stilbene, TSB-Br is trans-4-bromostilbene, TCNB is 1,2,4,5-phenylenetetraacetonitrile, and x is the proportion of TSB molecules. The organic eutectic material prepared by this invention has a regular morphology, high crystallinity, and exhibits both strong and delayed fluorescence emission, with continuously tunable diffusion coefficients for singlet and triplet charge-transfer excitons. The preparation method described in this invention has advantages such as low raw material cost, mild conditions, and simple operation. The prepared (TSB)2... x (TSB-Br) 1‑x (TCNB)2 organic eutectic materials have potential applications in fields such as imaging, photoelectric conversion, and spintronics.

This application discloses an ion qubit addressing system and a method for addressing ion qubits. The ion qubit addressing system includes a control module, a spintronic device array, and a surface-chip ion trap. The control module is configured to determine an electrical signal control sequence based on the acquired quantum manipulation requirements. The spintronic device array is configured to determine a local magnetic field network based on the electrical signal control sequence. The surface-chip ion trap is configured to control the transition frequency of the ion qubits based on the local magnetic field network, enabling the ion qubit addressing system to address qubits according to the transition frequency. This overcomes the limitations of static magnetic field addressing, allowing for flexible adjustment of the magnetic field distribution according to changes in the quantum algorithm, thus improving addressing efficiency. Furthermore, controlling the transition frequency of the ion qubits allows different ion qubits to acquire unique energy level codes due to spatial differences, achieving precise identification and addressing of target ion qubits.

A spintronics device 1 is provided with a generation layer 4 which is for generating a spin current and in which Al and Si are present in a mixed manner. The generation layer 4 includes a region in which variation in the composition ratios of Al and Si is within 20% of the respective average values thereof in the layer thickness direction of the generation layer 4.

The application relates to the technical field of spin electronics devices and quantum information devices, and provides a superconductor-spin switchable device and a superconductor-spin switching method.The device comprises a magnetic layer and a non-magnetic layer; the magnetic layer has perpendicular magnetic anisotropy; and the non-magnetic layer is a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; under the condition of being lower than a first temperature, the In-Bi-based alloy layer has superconducting characteristics; and under the condition of being higher than the first temperature, the In-Bi-based alloy layer can realize current-spin current conversion.The application can realize a new type of functional material and a device thereof which can exhibit superconducting characteristics and high-efficiency current-spin current conversion capability in the same material system, break through the limitation of separation of traditional superconducting materials and spin materials, and realize integrated and cooperative work of the two.

The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and / or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

The invention provides a wide-band-gap ferromagnetic insulator material. The chemical formula of the wide-band-gap ferromagnetic insulator material is Cd2CrSbO6. The invention also provides a method for preparing the wide-band-gap ferromagnetic insulator material, which comprises the following steps: (1) sufficiently grinding and mixing CdO, Cr2O3 and Sb2O5 in a protective gas atmosphere to obtain a mixture; (2) sealing and wrapping the mixture, and then carrying out heating and pressurizing treatment; and (3) cooling and depressurizing the treated product obtained in the step (2). The ferromagnetic insulator material Cd2CrSbO6 disclosed by the invention has a potential application value in spintronics devices.

The invention provides a rotatable self-focusing type spintronics terahertz source, and belongs to the technical field of terahertz application and optical application, the rotatable self-focusing type spintronics terahertz source comprises a main support, a rotating disc, a spintronics terahertz source heterojunction film-lens system and a permanent magnet, the rotating disc is internally provided with rotating disc threads, the spintronics terahertz source heterojunction film-lens system is connected with the rotating disc through the rotating disc threads, rotating disc two-side threaded holes are formed in the two centrosymmetric sides of the rotating disc, and the permanent magnet is connected with the rotating disc through the rotating disc two-side threaded holes. By adopting the rotatable self-focusing type spintronics terahertz source, the problems of a traditional terahertz source in the aspects of power loss, system integration level, power density, focusing effect, thermal stability and radiation area are solved.

The invention discloses a magnetic Weel semimetal single crystal with novel quantum oscillation as well as a preparation method and application of the magnetic Weel semimetal single crystal. The single crystal is prepared by adopting a self-dissolution method, the chemical formula of the single crystal is PrAlSi, the single crystal structure belongs to a LaPtSi-type tetragonal crystal system, the space group is non-centrosymmetric I41md (No.109), a magnetic test shows the ferromagnetic ground state characteristic of the PrAlSi single crystal, and the ferromagnetic ground state characteristic and the ferromagnetic ground state characteristic indicate that the PrAlSi single crystal is a novel magnetic Weil semi-metal material of which the space inversion symmetry and the time inversion symmetry are broken at the same time. Therefore, the single crystal system has a stable foreign state. The PrAlSi single crystal shows obvious resistivity-temperature quantum oscillation, which is a novel quantum oscillation behavior and is derived from destructive interference between SdH oscillation of a spin splitting Fermi surface caused by strong exchange interaction of Weyl Fermi-4f electrons. The magnetic Weel semimetal single crystal with the stable Weel state and the novel quantum oscillation has a good application prospect in the aspects of spintronics devices and sensors.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex chirality regulation, which comprises a plurality of ferromagnetic nano-disks and five bias nano-magnets, the ferromagnetic nano-disks are tangent or intersected to form an intercommunication nano-structure, the five bias nano-magnets are used for regulating the hand shape of a magnetic vortex, and the magnetic vortex chirality regulation is realized through the magnetic vortex chirality regulation. The ferromagnetic nano-disk and the bias nano-magnet are made of the same material which is a soft magnetic material containing Fe, Co and Ni elements. Nanostructures such as a ferromagnetic nanodisk array and a bias magnet are innovatively adopted, a binary logic gate device with deterministic magnetic vortex chirality is constructed, and the key scientific problem of chirality randomness in a traditional magnetic vortex device is solved by accurately regulating and controlling the chirality state of magnetic vortex, so that the magnetic vortex chirality of the magnetic vortex device is improved. An important theoretical support and an experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption, and the method has important scientific significance and application value for promoting the development of spintronics devices.

This application discloses a two-dimensional CrS nanosheet, its preparation method, and its applications. The preparation method of the two-dimensional CrS nanosheet includes the following steps: sulfur powder and a chromium source precursor are placed upstream and centrally in a chemical vapor deposition system, respectively, in the direction of carrier gas flow. A substrate is positioned directly above the chromium source precursor. A reaction is carried out by programmed temperature rise to obtain two-dimensional cadmium sulfide nanosheets. The programmed temperature rise conditions are: increasing from 20-30°C to 650-680°C within 8-10 minutes, and then holding at that temperature. The preparation method of the CrS two-dimensional nanosheets provided in this application is simple, highly controllable, and has low production costs. The two-dimensional CrS nanosheets prepared using this method pave the way for magnetic materials and magnetic-related spintronics applications.

A spintronics element (10) comprises: a channel layer (30); a free layer (21) laminated on the channel layer (30); a barrier layer (22) laminated on the free layer (21); and a reference layer (23) laminated on the barrier layer (22). The direction of magnetization in the reference layer (23) is fixed. The direction of magnetization in the free layer (21) changes due to spin-orbit torque, which is generated by a write current that flows through the channel layer (30). The channel layer (30) is formed of a tungsten alloy containing at least one of iron and nickel in an amount of 35at% or less.

The invention discloses a nanocrystal antiferromagnetic material, a preparation method and application, the nanocrystal antiferromagnetic material is a cobalt-nickel-silicon (Co-Ni-Si) ternary polycrystalline material, the chemical components of the nanocrystal antiferromagnetic material comprise three elements of cobalt (Co), nickel (Ni) and silicon (Si), and the atomic number ratio of cobalt to nickel to silicon is (33 + / -1): (21 + / -1): (46 + / -1). The preparation method comprises the following steps: (1) burdening; (2) packaging; (3) chemical vapor transport reaction; and (4) sampling. The antiferromagnetic material is widely applied to preparation of spintronics devices, such as magnetic tunnel junctions, spin valves, magnetic random access memories and magnetic sensors; the material is used as an antiferromagnetic pinning layer, a reference layer or an antiferromagnetic-based active layer in spintronics devices.

The invention relates to the technical field of spintronics devices and quantum information devices, and provides a superconducting-spin switchable device and a superconducting-spin switching method, and the device comprises a magnetic layer which has perpendicular magnetic anisotropy; and a non-magnetic layer, the non-magnetic layer being a layer; the magnetic layer and the non-magnetic layer form a magnetic / non-magnetic heterojunction; the In-Bi-based alloy layer has a superconducting characteristic under the condition that the temperature is lower than a first temperature, and the In-Bi-based alloy layer can realize current-spin current conversion under the condition that the temperature is higher than the first temperature. According to the novel functional material and the device thereof, the superconducting characteristic and the efficient current-spin current conversion capacity can be shown in the same material system, the limitation of separation of a traditional superconducting material and a traditional spin material is broken through, and integrated cooperative work of the superconducting material and the spin material is achieved.

The invention relates to a single-target magnetron sputtering manganese-tin alloy film and a preparation method thereof. And the Mn3Sn / MgO heterostructure of the Mn3Sn film is prepared through single-target magnetron sputtering. A single crystal epitaxial Mn3Sn thin film or a non-pure epitaxial Mn3Sn thin film is grown on an MgO (111) single crystal substrate. The Mn3Sn thin film is pure in structure, high in crystallization quality and more beneficial to research on intrinsic magnetism and electrical transport characteristics of Mn3Sn, it is found for the first time that the magnetic structure of the prepared Mn3Sn thin film does not present a spin glass state at low temperature, and it is indicated that the magnetic structure has higher stability; meanwhile, it is observed for the first time that the longitudinal resistivity of the Mn3Sn thin film is converted from the metal conduction characteristic to the semiconductor transport characteristic along with temperature rise, and the abnormal Hall effect disappears; according to the method, the feasibility of industrial mass production is remarkably improved, the preparation cost is reduced, and the method has potential application value in development and preparation of novel topological spintronics devices.

The present disclosure relates generally to spintronic material stacks and devices. Various disclosed embodiments of YBiPt-based spin-orbit torque (SOT) stacks can be used for high-temperature applications. Disclosed herein are various buffer and / or intermediate layer configurations in spintronic stacks that can promote the growth of YBiPt in the (110) orientation to promote a high spin-Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack including a buffer layer including one or more layers each individually including MgO(100), TiN(100), Ta, Nb, HfN, Ta3W2(110), TaW2(100), Ta3W2N, TaW2N, or YBiPt; an SOT layer including YBiPt with a (110) orientation; an intermediate layer including one or more of MgO, Ta3WN, TaW3N, Ta3W(110), TaW3(100), YPt(110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN; and a ferromagnetic layer.

The invention discloses an atomic-scale width-adjustable NiI2 nanobelt as well as a preparation method and application of the atomic-scale width-adjustable NiI2 nanobelt. The preparation method comprises the following steps: providing a single-walled carbon nanotube with the diameter of 1-2.7 nm, opening and purifying the single-walled carbon nanotube to obtain an opened and purified single-walled carbon nanotube; a mixture containing an open and purified single-walled carbon nanotube and NiI2 powder is placed in a reaction chamber of a vacuum chemical vapor transport system, heating reaction is performed, so that spontaneous assembly of a NiI2 one-dimensional structure is induced in a one-dimensional cavity of the single-walled carbon nanotube, and the single-layer atomic-scale width-adjustable NiI2 nanobelt is obtained. According to the preparation method provided by the invention, the one-dimensional cavity of the single-walled carbon nanotube is used as a material growth space, spontaneous assembly of a NiI2 one-dimensional structure can be effectively induced, the atomic-scale width-adjustable NiI2 nanobelt is prepared, and the preparation method plays an important role in revealing a one-dimensional magnetic transformation mechanism and developing a new-generation spintronics device.

The invention discloses a preparation method of a CrSb single crystal with a NiAs structure, the method is chemical vapor transport, and the method comprises the following specific steps: weighing chromium powder and antimony powder according to an atomic ratio of 1: 1, and preparing iodine particles according to 6.5 mg / cm <-3 >; sealing the raw materials into a vacuum quartz tube; the quartz tube is placed in a double-temperature-zone furnace, the temperature of the hot end is set to be 900 DEG C, the temperature of the cold end is set to be 700 DEG C, the heating rate is not higher than 1.5 DEG C / min, and the raw materials are placed at the hot end; the temperature is kept for 7 days, then the furnace is cooled to the room temperature, the high-quality CrSb single crystal with the (001) cleavage surface can be obtained, and the large magnetoresistance and the nonlinear change Hall effect are observed in the high-quality CrSb single crystal. According to the invention, the problem that the CrSb single crystal is small in cross section size and irregular is solved, and the application of the CrSb single crystal in the fields of topological magnetism and spintronics can be promoted.

This invention discloses a quasi-cage-like lattice Fe₂Ge single crystal exhibiting room-temperature anomalous Hall effect and topological Hall effect, and its growth method. The Fe₂Ge single crystal has a quasi-cage-like crystal structure, wherein magnetic Fe atoms are... ab The projections of the surfaces form a quasi-cage pattern. A chemical vapor deposition method is employed, using halogens or halogen compounds as transport agents, to grow the crystal within a temperature range of 750 °C to 950 °C. The grown Fe₂Ge single crystals are bulky, possess a metallic luster, and have millimeter-scale dimensions. These single crystals exhibit high-temperature ferromagnetism, with an anomalous Hall conductivity of no less than 488.50 Ω at room temperature. ‑1 · cm ‑1 The topological Hall resistivity at room temperature is not less than 0.35 μΩ·cm, which has great potential application value in spintronic devices such as room temperature anomalous Hall sensors and magnetic sensors. Furthermore, the crystal growth method disclosed in this invention has advantages such as simple growth equipment, low cost, and suitable growth temperature, making it suitable for industrial production.

The invention particularly relates to a method for regulating and controlling twisted spin waves in a cylindrical magneton crystal, and belongs to the field of spintronics. According to the scheme, a ferromagnetic cylindrical magneton crystal with periodical modulation magnetocrystalline anisotropy is constructed, theoretical analysis is carried out on a magnetic oscillator energy band structure of the ferromagnetic cylindrical magneton crystal, and it is shown that twisted spin waves with any orbital angular momentum have the magnetic oscillator band gap characteristic at the boundary of a Brillouin region. By accurately regulating and controlling parameters such as magnetocrystalline anisotropy strength or a magneton crystal lattice constant, effective tuning of the band gap position and width of the twisted spin wave can be realized, and further accurate control of the propagation behavior of the twisted spin wave can be realized. The method has important significance for realizing high-capacity information transmission and processing based on the twisted spin wave.

The invention provides a light-operated device and a light-operated magnetic array storage method for realizing anti-ferromagnetic neel vector reversible flipping based on surface plasmon thermotropic strain, and belongs to the crossing field of spintronics, magnetics, nano photonics and information storage technologies. The surface plasmon mode of the metal nano square frame is excited, the local nano heating effect of the surface plasmon is utilized to induce the antiferromagnetic thin film layer to generate directional thermotropic strain, and the reversible overturning of the neel vector of the antiferromagnetic thin film layer is realized by combining with the induction of a magnetoelastic coupling field. According to the invention, a metal nano square frame array is arranged on the antiferromagnetic thin film layer, and is suitable for novel light-operated magnetic storage, a programmable magneto-optical coupling device and a spin-photon fusion computing platform. The light-operated device provided by the invention is extremely low in energy consumption, free of current and magnetic field, high in directivity and suitable for high-density array integration, and is an antiferromagnetic light-operated technology with both physical innovation and engineering realizability.