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Regulation and control method based on energy valley polarization characteristic of two-dimensional transition metal chalcogenide

A technology of transition metal chalcogenide and polarization characteristics, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of not being able to give full play to the excellent performance of two-dimensional material atomic-level thickness and flexibility , to achieve the effect of low cost, good controllability and easy operation

Active Publication Date: 2019-10-15
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although it has been reported that traditional antiferromagnetic materials such as MnO and CoO can be used to control the valley polarization characteristics of single-layer transition metal chalcogenides, because these traditional antiferromagnetic materials are bulk materials, they are not compatible with single-layer transition metals. The heterojunction formed by chalcogenides cannot give full play to the excellent properties of atomic-level thickness and bendability of two-dimensional materials

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  • Regulation and control method based on energy valley polarization characteristic of two-dimensional transition metal chalcogenide
  • Regulation and control method based on energy valley polarization characteristic of two-dimensional transition metal chalcogenide
  • Regulation and control method based on energy valley polarization characteristic of two-dimensional transition metal chalcogenide

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Embodiment 1

[0034] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0035] (1) First prepare MnB 2 -WS 2 Monolayer WS in heterostructures 2 Material:

[0036] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0037] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0038] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxide po...

Embodiment 2

[0049] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0050] (1) First prepare FeB 2 -WS 2 WS in heterostructures 2 Single layer material:

[0051] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0052] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0053] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxi...

Embodiment 3

[0062] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0063] (1) First prepare CrB 2 -WS 2 WS in heterostructures 2 Single layer material:

[0064] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0065] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0066] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxi...

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Abstract

The invention relates to a regulation and control method based on the energy valley polarization characteristic of a two-dimensional single-layer transition metal chalcogenide. The method comprises the following steps of: (1) growing a two-dimensional single-layer transition metal chalcogenide on a substrate by adopting a chemical vapor deposition method; (2) preparing two-dimensional ferromagnetic metal by adopting a mechanical stripping method; and (3) transferring the two-dimensional ferromagnetic metal to the two-dimensional single-layer transition metal chalcogenide in an aligning mannerthrough an aligning transfer platform to form a two-dimensional single-layer transition metal chalcogenide-two-dimensional ferromagnetic metal heterostructure. The heterostructure is formed by the two-dimensional ferromagnetic metal material and the two-dimensional single-layer transition metal chalcogenide, so that the characteristics of flexibility and atomic-level thinness of the two-dimensional material can be fully exerted, the problem that the characteristics of the two-dimensional material are damaged due to the three-dimensional-two-dimensional heterostructure formed by the traditionalferromagnetic metal material and the two-dimensional material is effectively solved, and the regulation and control method based on the energy valley polarization characteristic of a two-dimensionalsingle-layer transition metal chalcogenide can be applied to development and research of ultrathin microminiaturization, flexible spintronics, energy valley electronic devices and the like.

Description

technical field [0001] The invention relates to a method for regulating energy valley polarization characteristics based on a two-dimensional single-layer transition metal chalcogenide material and a two-dimensional ferromagnetic metal heterojunction. Background technique [0002] With the advancement of science and technology, electronic technology based on the control of the two intrinsic degrees of freedom of electron charge and spin and spintronics combining magnetism and microelectronics have been extensively developed. In recent years, with the rise of two-dimensional materials, scientists have become more interested in the study of Bloch electron energy valleys as degrees of freedom in crystal materials with special symmetry. Single-layer graphene has a hexagonal crystal structure, and two unequal Dirac cone points on the Fermi surface of the Brillouin zone, namely K and K', are connected to each other through time-reversal symmetry. Niu Qian's group at the Universit...

Claims

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Application Information

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IPC IPC(8): H01L21/34H01L29/66C23C14/08C23C14/24
CPCC23C14/083C23C14/24H01L29/66969H01L29/66984
Inventor 杨伟煌李华王高峰周昌杰
Owner HANGZHOU DIANZI UNIV
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