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A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides

A technology of transition metal chalcogenide and polarization characteristics, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problem of not being able to give full play to the excellent performance of two-dimensional material atomic-level thickness and flexibility , to achieve the effect of low cost, good controllability and easy operation

Active Publication Date: 2021-04-30
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although it has been reported that traditional antiferromagnetic materials such as MnO and CoO can be used to control the valley polarization characteristics of single-layer transition metal chalcogenides, because these traditional antiferromagnetic materials are bulk materials, they are not compatible with single-layer transition metals. The heterojunction formed by chalcogenides cannot give full play to the excellent properties of atomic-level thickness and bendability of two-dimensional materials

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  • A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides
  • A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides
  • A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides

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Embodiment 1

[0034] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0035] (1) First prepare MnB 2 -WS 2 Monolayer WS in heterostructures 2 Material:

[0036] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0037] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0038] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxide po...

Embodiment 2

[0049] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0050] (1) First prepare FeB 2 -WS 2 WS in heterostructures 2 Single layer material:

[0051] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0052] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0053] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxi...

Embodiment 3

[0062] A method for regulating the energy valley polarization characteristics of two-dimensional transition metal chalcogenides, comprising the following steps:

[0063] (1) First prepare CrB 2 -WS 2 WS in heterostructures 2 Single layer material:

[0064] Evacuate the tube furnace reaction chamber to 10 －2 Torr, purged with 200 sccm argon to return to normal pressure.

[0065] Prepare two pieces of SiO 2 / Si substrates A and B, two SiO 2 Rinse the / Si substrate with a large amount of deionized water, put it in acetone solution and ultrasonically clean it for 8 minutes, take out the substrate, put it in absolute ethanol solution for ultrasonic cleaning for 8 minutes, take out the substrate again, put it into deionized water for ultrasonic cleaning for 8 minutes, and put the cleaned The substrate was blown dry with inert gas nitrogen.

[0066] SiO 2 / Si substrate A is placed on the carrier in the chamber of the thermal evaporation coating instrument, the tungsten trioxi...

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Abstract

The invention relates to a method for regulating the energy valley polarization characteristics of a two-dimensional single-layer transition metal chalcogenide, comprising the following steps: (1) growing a two-dimensional single-layer transition metal chalcogenide on a substrate by chemical vapor deposition; (2) Preparation of two-dimensional ferromagnetic metals by mechanical exfoliation; (3) Alignment transfer of two-dimensional ferromagnetic metals to two-dimensional single-layer transition metal chalcogenides by aligning the transfer platform to form a two-dimensional monolayer Transition metal chalcogenide-two-dimensional ferromagnetic metal heterostructure; the present invention uses a two-dimensional ferromagnetic metal material and a two-dimensional single-layer transition metal chalcogenide to form a heterogeneous structure, which can give full play to the flexibility and atomic level of two-dimensional materials. The thin thickness feature effectively avoids the problem of destroying the characteristics of the two-dimensional material itself due to the three-dimensional-two-dimensional heterostructure formed by traditional ferromagnetic metal materials and two-dimensional materials, and can be applied to ultra-thin miniaturization and flexible spin electronics and energy valleys Research and development of electronic devices, etc.

Description

technical field [0001] The invention relates to a method for regulating energy valley polarization characteristics based on a two-dimensional single-layer transition metal chalcogenide material and a two-dimensional ferromagnetic metal heterojunction. Background technique [0002] With the advancement of science and technology, electronic technology based on the control of the two intrinsic degrees of freedom of electron charge and spin and spintronics combining magnetism and microelectronics have been extensively developed. In recent years, with the rise of two-dimensional materials, scientists have become more interested in the study of Bloch electron energy valleys as degrees of freedom in crystal materials with special symmetry. Single-layer graphene has a hexagonal crystal structure, and two unequal Dirac cone points on the Fermi surface of the Brillouin zone, namely K and K', are connected to each other through time-reversal symmetry. Niu Qian's group at the Universit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/34H01L29/66C23C14/08C23C14/24
CPCC23C14/083C23C14/24H01L29/66969H01L29/66984
Inventor 杨伟煌李华王高峰周昌杰
Owner HANGZHOU DIANZI UNIV
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