20575results about How to "Improve controllability" patented technology

A manipulator operative in a master / slave operative mode, comprising: a master unit commanding an operation; a slave unit having a work unit; a detector detecting the orientation of the master unit and the orientation of the slave unit; and a control device controlling the slave unit in response to the command from the master unit, wherein the control device includes: a function of determining a non-mater / slave operative mode or a master / slave operative mode; a function of calculating a difference between the orientation of the master unit and the orientationof the slave unit; and a function of comparing the absolute value of the difference with a preset reference value; and depending upon the result of the comparison, determining a normal master / slave operative mode or a transitional master / slave operative mode, in the master / slave operative mode, the transitional master / slave operative mode is a transitional mode from the non-master / slave operative mode to the master / slave operative mode.

A power transmission mechanism comprising: a flexible power transmission element; a pair of a drive pulley and a driven pulley on which the flexible power transmission element is wound, each the pulley having a pin-embedding hole formed to extend from the outer circumferential thereof toward the center thereof, and a slit elongated in the circumferential direction of the pulley to extend to opposite sides of the embedding hole and communicating with the embedding hole; and a pair of columnar or tapered anchor pins each having a path hole penetrating the anchor pin across the lengthwise direction thereof to receive the flexible power transmission element inserted therein, wherein each the anchor pin receiving the flexible power transmission element in the path hole thereof is embedded in the embedding hole of the associated pulley under pressure, and the flexible power transmission element is thereby held on the pulley.

A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and / or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and / or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation.

A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the reference plane. The respective dimples are isolated from each other by a portion of the substrate-supporting surface.

A CVD method for forming a silicon nitride film includes exhausting a process chamber (8) that accommodates a target substrate (W), and supplying a silane family gas (HCD) and ammonia gas (NH3) into the process chamber, thereby forming a silicon nitride film on the target substrate by CVD. Said forming a silicon nitride film on the target substrate alternately includes a first period of performing supply of the silane family gas (HCD) into the process chamber (8), and a second period of stopping supply of the silane family gas.

A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

A substrate-supporting device for CVD having a substrate-supporting region includes: a substrate-supporting surface which is a continuous surface defining a reference plane on which a substrate is placed; and multiple dimples having bottom surfaces lower than the reference plane. The respective dimples are isolated from each other by a portion of the substrate-supporting surface.

An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

A method and apparatus is provided for a multiple light-source illuminating device, the design and construction of which is derived from the lighting requirements of a specific lighting application. The resulting illuminating device (16) provides illumination according to the principles of lighting practice for the optimal performance of visual tasks. Coupling with sensors (21) and logical control (20) allows illumination intensity and spectrum to be varied according to changing user needs. The illuminating device includes multiple discrete light emitting components of different spatial intensity distribution and color spectrum mounted in specific orientations such that the application oriented combined lighting effect is created. The control is provided via a differentiated power supply (19) capable of affecting the current, voltage and duty cycle determining the relative contribution of each light source effecting a different spatial intensity distribution and color spectrum.

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Methods are provided for manipulating droplets. The methods include providing the droplet on a surface comprising an array of electrodes and a substantially co-planer array of reference elements, wherein the droplet is disposed on a first one of the electrodes, and the droplet at least partially overlaps a second one of the electrodes and an intervening one of the reference elements disposed between the first and second electrodes. The methods further include activating the first and second electrodes to spread at least a portion of the droplet across the second electrode and deactivating the first electrode to move the droplet from the first electrode to the second electrode.

A partial section of an aerial image measuring unit is arranged at a wafer stage and part of the remaining section is arranged at a measurement stage, and the aerial image measuring unit measures an aerial image of a mark formed by a projection optical system. Therefore, for example, when the aerial image measuring unit measures a best focus position of the projection optical system, the measurement can be performed using the position of the wafer stage, at which a partial section of the aerial image measuring unit is arranged, in a direction parallel to an optical axis of the projection optical system as a datum for the best focus position. Accordingly, when exposing an object with illumination light, the position of the wafer stage in the direction parallel to the optical axis is adjusted with high accuracy based on the measurement result of the best focus position.

The present invention relates to a data storage method, device and system and a management server. The data storage method includes: constituting a data pool from all of n data storage devices; when there is data for storage, polling all the devices in the data pool to select a group of m devices, and storing the data onto each of the selected group of m devices, where m is larger than one and smaller than n. The embodiments of the invention can address the problems of an existing data storage approach that a failing node causes an increased load on and instability of another node and that each node in the existing data storage approach has a low utilization ratio and poor predictability, so as to achieve uniform loads on the devices and high reliability of the nodes despite any failing node and improve the resource utilization ratio and predictability of the nodes.

A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

A flash memory includes a substrate with a protrusion, a control gate, two floating gates, and a dielectric layer. The protrusion extends from a top face of the substrate. The control gate is formed on the protrusion of the substrate and extendedly covers opposite sidewalls of the protrusion. The floating gates are respectively formed on top of the protrusion and being on two opposite sides of the control gate. The dielectric layer is sandwiched the control gate and each of the two floating gates. Because of the arcuate control gate used in the flash memory, the controllability of the control gate is increased and the memory cell window is enhanced.

The method provides a spectral speech description to be used for synthesis of a speech utterance, where at least one spectral envelope input representation is received. In one solution the improvement is made by manipulation an extremum, i.e. a peak or a valley, in the rapidly varying component of the spectral envelope representation. The rapidly varying component of the spectral envelope representation is manipulated to sharpen and / or accentuate extrema after which it is merged back with the slowly varying component or the spectral envelope input representation to create an enhanced spectral envelope final representation. In other solutions a complex spectrum envelope final representation is created with phase information derived from one of the group delay representation of a real spectral envelope input representation corresponding to a short-time speech signal and a transformed phase component of the discrete complex frequency domain input representation corresponding to the speech utterance.

A raw material gas supply apparatus includes a liquid raw material gas supply source, a source tank storing liquid raw material, a gas distribution passage through which raw material gas comprising steam of the liquid raw material is supplied to a process chamber from the source tank, an automatic pressure regulator installed on an upstream side of the gas passage, wherein the automatic pressure regulator keeps supply pressure of the raw material gas at a set value, a supply gas switching valve installed on a downstream side of the gas passage, wherein this valve opens and closes the gas passage, an orifice provided on at least one of an inlet side or outlet side of the valve, wherein the orifice regulates flow rate of the raw material gas, and a constant temperature heating device heats the source tank, the gas passage, the valve and the orifice to a set temperature.

Provided is a Schottky barrier nanowire field effect transistor, which has source / drain electrodes formed of metal silicide and a channel formed of a nanowire, and a method for fabricating the same. The Schottky barrier nanowire field effect transistor includes: a channel suspended over a substrate and including a nanowire; metal silicide source / drain electrodes electrically connected to both ends of the channel over the substrate; a gate electrode disposed to surround the channel; and a gate insulation layer disposed between the channel and the gate electrode.

The present invention provides one kind of water gel containing natural high molecular material and its preparation process. The water gel has cross-linking degree of 70-95 % and water absorption of 500-80000 %, and contains natural high molecular material or its derivative selected from chitin, chitin derivative, chitosan, chitosan derivative, carrageenin, etc. The water gel may have synthetic high molecular material, inorganic filler, cross-linking sensitizer, medicine and other assistant added. It is prepared through radiation cross-linking, with the radiation dosage being 10-40 kGy. The water gel of the present invention has high water absorption, high flexibility, good medicine slow releasing performance, and may be used in wound dressing, etc.

A method of spectrally broadening light pulses includes the steps of providing the light pulses with a laser source, said light pulses having a pulse duration below 1 ps, in-coupling the light pulses into a hollow optical waveguide device, and spectrally broadening the light pulses propagating along the pulse guiding medium by subjecting them to a Raman nonlinearity via excitation of a Raman polarization having a first Raman period, wherein the optical waveguide device subjects the light pulses to anomalous group velocity dispersion which combines with the spectral broadening of the light pulses to result in a Raman-enhanced self-compression of the light pulses, and the light pulses further propagate along the optical waveguide device such that the Raman-enhanced self compression results in a further excitation of a Raman polarization having a second Raman period which is faster than the first Raman period.

In order to improve a controllability of etching characteristics by way of precisely and freely controlling a flow or a density distribution of a processing gas introduced into a processing chamber, a plasma etching apparatus includes, as a gas inlet for introducing an etching gas into a plasma generation region PS in a chamber 10, an upper gas inlet (an upper central shower head 66a and an upper peripheral shower head 68a) for introducing a gas through an upper electrode 38; and a side gas inlet for introducing a gas through a sidewall of the chamber 10. The side gas inlet 104 has a side shower head 108 attached to the sidewall of the chamber 10.

Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good controllability. After the surface of a silicon substrate is cleaned, a silicon dioxide film having a thickness of 1-20 nm is formed on the substrate surface. The silicon substrate is exposed to plasma generated by electron impact, while the silicon substrate is maintained at a temperature of 0° C. to 700° C. Thus, nitrogen atoms are incorporated into the silicon dioxide film, obtaining a modified insulating film having good electrical properties.

The invention discloses a petroleum wellhead annular space sealing device. The petroleum wellhead annular sealing device is used for sealing an annular space between a wellhead sealing body and a petroleum pipe, at least one annular groove is formed in the inner wall surface of the sealing body, and the sealing body is provided with an injection hole which is communicated to a centrifugal end of the annular groove; the petroleum wellhead annular space sealing device further comprises a sealing ring, a power ring, and an injection component, wherein the sealing ring is embedded into the annular groove, the sealing ring is used for sealing the groove in the radial direction by being jointed to the wall surface of the annular groove, and is used for sealing the annular space by being jointed to the outer wall of the petroleum pipe, the power ring is installed in the annular groove and is located between the groove bottom of the annular groove and the sealing ring, and the injection component is installed in an inlet of the injection hole, and is used for injecting fluid with given pressure so as to make the power ring push the sealing ring to tightly press the petroleum pipe. In the petroleum wellhead annular space sealing device, the requirement for deformation capability of a sealing part is low, and meanwhile the sealing capability can be effectively improved.

A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).

A planetary gear train of an automatic transmission may include an input shaft, an output gear, a first planetary gear set always outputting a negative rotation speed from a rotation speed input from the input shaft, a second planetary gear outputting the negative rotation speed input from the first planetary gear set or converting negative rotation speed into a positive rotation speed and outputting the positive rotation speed, a compound planetary gear set formed by third and fourth planetary gear sets and changing the rotation speed selectively through two paths and into nine forward speeds and one reverse speed, eight rotational members including two rotation elements connected to each other or one rotation element among the rotation elements of the first and second planetary gear sets and the compound planetary gear set, and a six friction members, and a transmission housing.

A controller for use with a guidewire, such as a vascular guidewire, provides a mechanism for gripping and applying a torque to the guidewire without the need to thread the guidewire axially through the controller and at a location close to a point of access of the guidewire. In one embodiment, the controller includes a side-access, multi-part assembly including a collet or other gripping element that applies a uniform radially inward force on the guidewire. In another embodiment, for use with guidewires having active electrically controllable elements, the controller integrally or removably incorporates a switch or other mechanism to initiate an energized state. The controller thereby permits ergonomic, single-handed control of an electronically steerable guidewire, including axially displacing, torquing and steering the guidewire.

The method provides a spectral speech description to be used for synthesis of a speech utterance, where at least one spectral envelope input representation is received. In one solution the improvement is made by manipulation an extremum, i.e. a peak or a valley, in the rapidly varying component of the spectral envelope representation. The rapidly varying component of the spectral envelope representation is manipulated to sharpen and / or accentuate extrema after which it is merged back with the slowly varying component or the spectral envelope input representation to create an enhanced spectral envelope final representation. In other solutions a complex spectrum envelope final representation is created with phase information derived from one of the group delay representation of a real spectral envelope input representation corresponding to a short-time speech signal and a transformed phase component of the discrete complex frequency domain input representation corresponding to the speech utterance.

The invention discloses a preparation method of a graphene dispersion liquid. The preparation method of the graphene dispersion liquid comprises the following steps: placing an expanded graphite compacted electrode and a metallic or non-metallic electrode material in an electrolyte solution as an anode and a cathode respectively, and applying a voltage of 1-20V and / or a current having a density of 1-200mA / cm<2> between the anode and the cathode for carrying out an electrochemical reaction for 1-120min; and washing an anode product obtained after the electrochemical reaction, adding to a dispersant, and carrying out ultrasonic or / and mechanical stirring dispersion to obtain the graphene dispersion liquid. The invention also discloses a preparation method of a graphene film. The graphene dispersion liquid forms the graphene film on a substrate in a filter film forming mode or a coating film forming mode or a natural deposition mode. The preparation methods have the advantages of simple process, easy operation, high controllability, low cost and mild reaction condition, and are suitable for the industrialized large-scale production.