6results about How to "Low process temperature" patented technology

This invention provides a method for preparing high-nitrogen-content vanadium-containing steelmaking additive silicon vanadium ferronitride, comprising the following steps: 1) mixing vanadium oxide and a carbon source at a C / O molar ratio of 0.8-1, briquetting the mixture, and then placing it in a nitrogen atmosphere for a reduction nitriding reaction at 1100-1400 °C to obtain a one-step product; 2) crushing the one-step product obtained in step 1), mixing it with a silicon source and an iron source, briquetting the mixture, and then placing it in a nitrogen atmosphere for densification treatment at 1300-1500 °C to obtain high-nitrogen-content silicon vanadium ferronitride, wherein the silicon source is ferrosilicon and / or silicon. This invention can obtain high-purity, uniformly composed, and highly dense silicon vanadium ferronitride, improving the automation level and continuous production capability of the production process.

The application relates to the technical field of ultra-high-temperature ceramic materials, in particular to a preparation method of an ultra-high-temperature ceramic material, which comprises the following steps: uniformly mixing silicon-yttrium alloy powder I, zirconium boride and graphite to obtain initial powder; under an inert atmosphere, performing ball milling treatment on the initial powder, then performing forming processing to prepare ceramic green body material; and performing reaction melt impregnation on the ceramic green body material and silicon-yttrium alloy powder II at 1200-1500 DEG C to obtain ZrB2-YSi2-SiC ultra-high-temperature ceramic material. The application adopts the method of reaction melt impregnation to prepare high-density ultra-high-temperature ceramic material; under a high-temperature service environment, the binary-doped modified ZrB2 ceramic forms a dense oxide layer under high-temperature oxidation conditions, so as to improve the anti-oxidation corrosion performance of the material.

This invention discloses a PECVD equipment and a silicon wafer passivation method. The PECVD equipment includes a reaction chamber and an RF power supply. The reaction chamber includes a base, an electrode plate vertically disposed within the reaction chamber, and a wafer cassette. The wafer cassette is used to hold multiple stacked silicon wafers and is positioned at a predetermined location on the base, such that the wafer cassette, after entering the reaction chamber, can be arranged on both sides of the electrode plate. The wafer cassette has an opening so that the passivation-to-be-treated sides of the stacked silicon wafers face the electrode plate. The RF power supply is electrically connected to the electrode plate. The wafer cassette and the base are grounded. The reactive gas introduced into the reaction chamber dissociates to form plasma, which is then deposited on the passivation-to-be-treated sides of the silicon wafers adjacent to the electrode plate. This invention avoids the need for plating around the wafer, shortens process time, reduces process temperature, improves equipment efficiency, and reduces breakage rate.

This invention discloses a polyolefin adhesive for liquid cooling plates, a heat-bonding film, and a method for preparing the same. The polyolefin adhesive for liquid cooling plates comprises the following raw materials in parts by weight: 40-80 parts of a base resin; 5-40 parts of a tackifying resin; 1-35 parts of a flame retardant; 1-5 parts of a crosslinking agent; and 0.1-0.5 parts of an antioxidant. The base resin is maleic anhydride polyolefin resin, and the crosslinking agent includes aziridine crosslinking agent, or may also include at least one of polycarbodiimide, bisphenol A type epoxy resin, and bisphenol A type phenolic epoxy resin. This invention achieves a reduction in the curing temperature of the adhesive film and improves its performance.

This invention belongs to the field of bioengineering technology, specifically relating to a preparation process for nano-sized water-soluble squalene. The process includes the following steps: S1, corn flour is treated and then mixed with pure water, followed by enzymatic hydrolysis using a compound enzyme to obtain a corn saccharification liquid for later use; S2, *Saccharomyces cerevisiae* GS-A3 is inoculated into a culture medium containing the corn saccharification liquid for fermentation; S3, after centrifugation of the fermentation broth, crude squalene is obtained by supercritical CO2 extraction; S4, after molecular distillation, the product is nano-sized. This invention uses corn as raw material, utilizing abundant starch resources, converting it into glucose through enzymatic hydrolysis, and producing squalene in *Saccharomyces cerevisiae* via the MVA pathway. This invention prepares high-yield, high-purity squalene, and through a special nano-saccharification process, improves the stability of squalene, extends its shelf life during application, and significantly improves its bioavailability. Furthermore, the technology used in this invention meets the requirements of green environmental protection.