10results about How to "Low process temperature" patented technology

This invention provides a method for preparing high-nitrogen-content vanadium-containing steelmaking additive silicon vanadium ferronitride, comprising the following steps: 1) mixing vanadium oxide and a carbon source at a C / O molar ratio of 0.8-1, briquetting the mixture, and then placing it in a nitrogen atmosphere for a reduction nitriding reaction at 1100-1400 °C to obtain a one-step product; 2) crushing the one-step product obtained in step 1), mixing it with a silicon source and an iron source, briquetting the mixture, and then placing it in a nitrogen atmosphere for densification treatment at 1300-1500 °C to obtain high-nitrogen-content silicon vanadium ferronitride, wherein the silicon source is ferrosilicon and / or silicon. This invention can obtain high-purity, uniformly composed, and highly dense silicon vanadium ferronitride, improving the automation level and continuous production capability of the production process.

The application belongs to the technical field of stainless steel preparation, and discloses a cold-deformable and heat-treatable hardening Ni-free high-strength stainless steel and a preparation method thereof. The stainless steel comprises the following components in percentage by mass: Cr: 13-15%, C: 0.25-0.4%, Mn: 0.5-2%, Cu: 0.1-3%, Mo: 2-3%, Si: 0-0.5%, and the balance of Fe and inevitable impurities. The stainless steel does not contain Ni element, has a low work hardening rate (strain hardening index n≤0.185) and a fracture elongation rate of more than 20% in a soft state (annealed state), is cold-deformable, and has low raw material and processing costs; after quenching and aging heat treatment, the stainless steel not only has an optimal combination of strength and toughness (yield strength and tensile strength are more than 1300 MPa and 1600 MPa respectively, and elongation is greater than 10%), but also has a high yield strength ratio.

The application relates to the technical field of ultra-high-temperature ceramic materials, in particular to a preparation method of an ultra-high-temperature ceramic material, which comprises the following steps: uniformly mixing silicon-yttrium alloy powder I, zirconium boride and graphite to obtain initial powder; under an inert atmosphere, performing ball milling treatment on the initial powder, then performing forming processing to prepare ceramic green body material; and performing reaction melt impregnation on the ceramic green body material and silicon-yttrium alloy powder II at 1200-1500 DEG C to obtain ZrB2-YSi2-SiC ultra-high-temperature ceramic material. The application adopts the method of reaction melt impregnation to prepare high-density ultra-high-temperature ceramic material; under a high-temperature service environment, the binary-doped modified ZrB2 ceramic forms a dense oxide layer under high-temperature oxidation conditions, so as to improve the anti-oxidation corrosion performance of the material.

The application relates to a method for preparing a low-temperature high-activity catalyst by a semi-dry ball milling method and application, and the method comprises the following steps: S110, preparing mixed mud B containing active component salt and carrier salt; S120, stirring the mixed mud B at a temperature of 20-40 DEG C to obtain a semi-dry viscous precursor mud; S130, ball milling the semi-dry viscous precursor mud product to obtain a high-uniform-dispersion precursor mud; and S140, drying and calcining the high-uniform-dispersion precursor mud to obtain a low-temperature high-activity catalyst. The catalyst has a low tail gas (NOx, VOC and CO) treatment temperature and high reaction catalytic activity, and the preparation method is simple in operation and simple in equipment requirement.

This invention discloses a PECVD equipment and a silicon wafer passivation method. The PECVD equipment includes a reaction chamber and an RF power supply. The reaction chamber includes a base, an electrode plate vertically disposed within the reaction chamber, and a wafer cassette. The wafer cassette is used to hold multiple stacked silicon wafers and is positioned at a predetermined location on the base, such that the wafer cassette, after entering the reaction chamber, can be arranged on both sides of the electrode plate. The wafer cassette has an opening so that the passivation-to-be-treated sides of the stacked silicon wafers face the electrode plate. The RF power supply is electrically connected to the electrode plate. The wafer cassette and the base are grounded. The reactive gas introduced into the reaction chamber dissociates to form plasma, which is then deposited on the passivation-to-be-treated sides of the silicon wafers adjacent to the electrode plate. This invention avoids the need for plating around the wafer, shortens process time, reduces process temperature, improves equipment efficiency, and reduces breakage rate.

The invention relates to the technical field of material surface treatment, in particular to a salt bath chromium plating method for the surface of diamond powder. By adopting a composite chloride system with magnesium chloride as a main component and alkali metal chloride as an auxiliary component, a low-melting-point co-melt can be formed in the salt bath chromium plating process, the melting point can be reduced to 700 DEG C or below, the process temperature of salt bath chromium plating is remarkably reduced, meanwhile, the molten salt flowability is optimized, and the salt bath chromium plating quality is improved. It is ensured that chromium atoms are evenly diffused in the fused salt and chemically react with carbon atoms on the surface of the diamond to generate a uniform and compact chromium carbide layer, and heat damage to the diamond is effectively avoided; the chlorate powder is low in cost, easy to obtain and free of toxicity, harmful substances cannot be generated in the salt bath chromium plating process, the environmental protection property is good, the bottlenecks of high temperature, high consumption and uneven plating of traditional salt bath chromium plating are broken through, a low-cost and high-reliability surface modification technology is provided for the diamond / metal composite material, and the application prospect is wide. And the large-scale application of the diamond in the fields of electronic packaging and thermal management is directly promoted.

This invention discloses a polyolefin adhesive for liquid cooling plates, a heat-bonding film, and a method for preparing the same. The polyolefin adhesive for liquid cooling plates comprises the following raw materials in parts by weight: 40-80 parts of a base resin; 5-40 parts of a tackifying resin; 1-35 parts of a flame retardant; 1-5 parts of a crosslinking agent; and 0.1-0.5 parts of an antioxidant. The base resin is maleic anhydride polyolefin resin, and the crosslinking agent includes aziridine crosslinking agent, or may also include at least one of polycarbodiimide, bisphenol A type epoxy resin, and bisphenol A type phenolic epoxy resin. This invention achieves a reduction in the curing temperature of the adhesive film and improves its performance.

The application discloses a strontium ferrite / polyether ether ketone composite magnet and a preparation method and application thereof, and belongs to the technical field of permanent magnet materials.The strontium ferrite / polyether ether ketone composite magnet comprises, in mass fraction, near Curie point magnetic field heat-treated strontium ferrite magnetic powder 84-95 parts, polyether ether ketone 5-15 parts, silane coupling agent 0.5-1.5 parts and lubricant 0.3-0.7 parts.The application adopts the above strontium ferrite / polyether ether ketone composite magnet and the preparation method and application thereof, realizes the synergistic improvement of magnetic performance, mechanical strength and heat resistance through intrinsic magnetic domain structure optimization, interface bonding strengthening and high densification structure design, and can meet the application requirements under the working conditions of high temperature, high reliability and high strength.

This invention belongs to the field of bioengineering technology, specifically relating to a preparation process for nano-sized water-soluble squalene. The process includes the following steps: S1, corn flour is treated and then mixed with pure water, followed by enzymatic hydrolysis using a compound enzyme to obtain a corn saccharification liquid for later use; S2, *Saccharomyces cerevisiae* GS-A3 is inoculated into a culture medium containing the corn saccharification liquid for fermentation; S3, after centrifugation of the fermentation broth, crude squalene is obtained by supercritical CO2 extraction; S4, after molecular distillation, the product is nano-sized. This invention uses corn as raw material, utilizing abundant starch resources, converting it into glucose through enzymatic hydrolysis, and producing squalene in *Saccharomyces cerevisiae* via the MVA pathway. This invention prepares high-yield, high-purity squalene, and through a special nano-saccharification process, improves the stability of squalene, extends its shelf life during application, and significantly improves its bioavailability. Furthermore, the technology used in this invention meets the requirements of green environmental protection.

The application provides a resourceful treatment method of sodium chloride-containing waste and polyvinyl chloride waste, and belongs to the technical field of waste treatment. The resourceful treatment method comprises the following steps: mixing sodium chloride-containing waste, polyvinyl chloride waste, a promoter and a solid halogen agent, and performing calcination treatment to obtain calcined material; mixing the calcined material with water, and performing solid-liquid separation to obtain liquid material and solid material; the solid material is recovered promoter; and the liquid material is crystallized to obtain recovered sodium chloride. The resourceful treatment method can remove organic pollutants in the sodium chloride-containing waste, effectively fix the chlorine element in the polyvinyl chloride waste, prevent the chlorine element from escaping, and reduce the harm to the environment.