5869 results about "Melting temperature" patented technology

One or more light emitting diode diodes (LEDs) are attached to a printed circuit board. The attached LEDs are connectable with a power source via circuitry of the printed circuit board. An overmolding material is insert molded an over at least portions of the printed circuit board proximate to the LEDs to form a free standing high thermal conductivity material overmolding that covers at least portions of the printed circuit board proximate to the LEDs. The free standing high thermal conductivity material has a melting temperature greater than about 100° C. and has a thermal conductivity greater than or about 1 W/m·K. In some embodiments, the free standing high thermal conductivity material is a thermoplastic material.

The present invention relates to water-dispersible materials (e.g. fibers or films) and to a method of producing same. The materials of the invention comprise a water soluble component, for example, a sulfonated polycondensate thermoplastic, and a modifying auxiliary component, for example, a low melt temperature thermoplastic.

Disclosed are compositions and a method for amplification of nucleic acid sequences of interest. The disclosed method generally involves replication of a target sequence such that, during replication, the replicated strands are displaced from the target sequence by strand displacement replication of another replicated strand. In one form of the disclosed method, the target sample is not subjected to denaturing conditions. It was discovered that the target nucleic acids, genomic DNA, for example, need not be denatured for efficient multiple displacement amplification. The primers used can be hexamer primers. The primers can also each contain at least one modified nucleotide such that the primers are nuclease resistant. The primers can also each contain at least one modified nucleotide such that the melting temperature of the primer is altered relative to a primer of the same sequence without the modified nucleotide(s). The DNA polymerase can be φ29 DNA polymerase.

Novel composite disc brake rotor assemblies are provided, along with novel and efficient methods for manufacturing them. Preferably, the rotor assemblies comprise annular wear plates formed of particle reinforced aluminum-based metal matrix composite (MMC), ceramic matrix composite (CMC), or of ‘carbon graphite foam.’ The wear plates, made of a first material, are attached to annular surfaces of a central rotor, made of a second material, by fusing bonding layers between the wear plates and the rotor surfaces. The bonding layers are comprised of at least one of a metal alloy having a melting temperature lower than that of either the first or second materials, and a high-temperature adhesive. Preferably, the wear plates comprise projections that are positioned within adjacent receiving recesses in the center rotor. The bonding layers and projections enhance thermal and acoustical transference between the wear plates and the center rotor section. Carbon graphite foam provides for substantially enhanced heat transference. Use of the fusable binding layer, or adhesive provides for an efficient, low cost method of manufacturing for composite disc brake rotor assemblies.

Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.

A high density integrated circuit structure and method of making the same includes providing a first silicon substrate structure having semiconductor device formations in accordance with a first circuit implementation and metal interlevel lines disposed on a top surface thereof and a second silicon substrate structure having a second circuit implementation and metal interlevel lines disposed on a top surface thereof. The first substrate structure includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from is the low-K dielectric, the metal interlevel lines of the first silicon substrate structure have a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. The second substrate structure also includes a planarized low-K dielectric disposed between the metal interlevel lines and a protective coating separating the metal interlevel lines from the low-K dielectric, the metal interlevel lines having a melting temperature on the order of less than 500 DEG C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8. Lastly, the first substrate structure is low temperature bonded to the second substrate structure at respective metal interlevel lines of the first and second substrate structures.

Catheter shaft tubes and methods for making them are described, in which a tubular member has two or more polymer layers, with some kind of reinforcement between at least two of the polymer layers. An inner polymer layer has a lower melting temperature than an outer polymer layer.

Provided is a method for the production of a reinforced polymer, which method comprises:(a) introducing carbon nanotubes into a polymer to provide a mixture of the polymer and the nanotubes;(b) stretching the mixture at or above the melting temperature (Tm) of the polymer to orient the carbon nanotubes; and(c) stretching the mixture in the solid state to further orient the carbon nanotubes.

A resin-soluble thermoplastic polymer veil toughening element for a curable composition wherein the polymer element is a non-woven veil in solid phase adapted to undergo at least partial phase transition to fluid phase on contact with a component of the curable resin matrix composition in which it is soluble at a temperature which is less than the temperature for substantial onset of gelling and/or curing of the curable composition and which temperature is less than the polymer elements melt temperature; a method for the preparation thereof, a preform support structure for a curable composition comprising the at least one thermoplastic veil element together with structural reinforcement fibers, methods for preparation thereof, a curable composition comprising the at least one thermoplastic veil element or the support structure and a curable resin matrix composition, a method for preparation and curing thereof, and a cured composite or resin body obtained thereby, and known and novel uses thereof.

Shampoo compositions comprise (a) from about 5% to about 50% of one or more detersive surfactants, by weight of the shampoo composition; (b) a dispersed gel network phase comprising, by weight of the shampoo composition, (i) at least about 0.05% of one or more fatty amphiphiles; (ii) at least about 0.01% of one or more secondary surfactants; and (iii) water; and (c) at least about 20% of an aqueous carrier, by weight of the shampoo composition. A process for preparing a shampoo composition comprises the steps of: (a) combining a fatty amphiphile, a secondary surfactant, and water at a temperature sufficient to allow partitioning of the secondary surfactant and the water into the fatty amphiphile to form a pre-mix; (b) cooling the pre-mix below the chain melt temperature of the fatty amphiphile to form a gel network; (c) adding the gel network to one or more detersive surfactants and an aqueous carrier to form a shampoo composition.

According to an embodiment, a component for attachment to an article includes an upper component that is made of a thermoplastic material having a first melting temperature and a flange member that is molded onto the upper component and made of a thermoplastic elastomer material having a second melting temperature that is lower than the first melting temperature of the upper component. The flange member extends laterally from a bottom end of the upper component so that a bottom surface of the flange member is flush with or positioned axially below a bottom surface of the upper component. The melting temperature of the thermoplastic elastomer material enables the flange member to be directly coupled to the article via heat welding and the like without substantially affecting the upper component.

A thermal interface material includes a mechanically compliant vertically aligned nanofiber film and a binder material for joining the nanofibers of the film to the surfaces of two substrates. Preferably, the binder material comprises a non-hydrocarbon-based material such as a metallic eutectic with a melting temperature below a nanofiber thermal damage threshold temperature of the film. The film is grown on a substrate which is then bonded to another substrate by the binder material in an adhesion process that may include pressure and heat. Alternatively, the film may be released from the substrate to produce a stand-alone thermal tape which may later be placed between two substrates and bonded.

A toner process comprising the aggregation and coalescence of an amorphous polyester, a crystalline polyester and a colorant, and wherein the coalescence is conducted at a temperature that is about lower than the melting point temperature of the crystalline polyester.

A thermal interface material is described for thermal coupling of an electronic component to a thermally conductive member. The thermal interface material includes a viscoelastic polymer matrix material, fusible solder particles in the matrix material, and filler particles in the matrix material. The solder particles have a melting temperature below a selected temperature (e.g. 157° C. for indium) and the filler particles have a melting temperature substantially above the selected temperature (e.g. 961° C. for silver). The filler particles keep the thermal interface material intact under adverse thermal and stress conditions.

A seam comprising two or more porous, at least partially meltable materials, having substantially the same melting temperature. A process for making the seam using heated fluid may be used to join all of the materials at the seam, or to join only selected layers of a laminate in a seam.

Disclosed are occluders and methods of their use. The occluders comprise shape-memory polymeric materials which, when heated above their crystalline melting temperatures, may be deformed from a first configuration into a second configuration. The occluder is then held in the deformed shape until it cools to a temperature below its crystalline melting temperature (T.sub.m) whereby it holds the deformed shape of the second configuration by virtue of the recrystallization of the polymeric occluder material. Upon reheating the occluder above its T.sub.m, the occluder will resume its original shape. In this manner, an occluder which has been deformed to reduce its diameter may be inserted into and positioned within a target lumen in the body and then allowed to warm to body temperature whereby it resumes its original diameter and results in the occlusion of the lumen. The occluders, according to preferred embodiments, may be used for reversible sterilization of mammals, among other surgical and non-surgical uses.

Expanded bond pads are formed over a passivation layer on a semiconductor wafer before the wafer is diced into individual circuit chips. After dicing, the individual chips are packaged by fixing each chip within a package core and building up one or more metallization layers on the resulting assembly. In at least one embodiment, a high melting temperature (lead free) alternative bump metallurgy (ABM) form of controlled collapse chip connect (C4) processing is used to form relatively wide conducting platforms over the bond pads on the wafer.

A packaging substrate (310) includes a semiconductor interposer (120) and at least one other intermediate substrate (110), e.g. a BT substrate. The semiconductor interposer has first contact pads (136C) attachable to dies (124) above the interposer, and second contact pads (340) attachable to circuitry below the interposer. Through vias (330) are made in the semiconductor substrate (140) of the interposer (120). Conductive paths going through the through vias connect the first contact pads (136C) to the second contact pads (340). The dies (124) are attached to the interposer after the attachment of the interposer to the BT substrate. In sequential soldering operations, the solder hierarchy is maintained by dissolving some material (e.g. copper) in the solder during soldering to raise the solder's melting temperature. For example, all of the solders may initially have the same melting temperature, but each solder's melting temperature is increased during soldering to prevent the solder from melting in the subsequent soldering operations.