1314 results about "Silicate glass" patented technology

An alkali aluminosilicate glass article, said alkali aluminosilicate glass having a surface compressive stress of at least about 200 MPa, a surface compressive layer having a depth of at least about 30 μm, a thickness of at least about 0.3 mm and an amphiphobic fluorine-based surface layer chemically bonded to the surface of the glass. In one embodiment the glass has an anti-reflective coating applied to one surface of the glass between the chemically strengthened surface of the glass and the amphiphobic coating. In another embodiment the surface of the chemically strengthened glass is acid treated using a selected acid (e.g., HCL, H2SO4, HClO4, acetic acid and other acids as described) prior to placement of the amphiphobic coating or the anti-reflective coating.

An electrical-energy-storage unit (EESU) has as a basis material a high-permittivity composition-modified barium titanate ceramic powder. This powder is double coated with the first coating being aluminum oxide and the second coating calcium magnesium aluminosilicate glass. The components of the EESU are manufactured with the use of classical ceramic fabrication techniques which include screen printing alternating multilayers of nickel electrodes and high-permittivitiy composition-modified barium titanate powder, sintering to a closed-pore porous body, followed by hot-isostatic pressing to a void-free body. The components are configured into a multilayer array with the use of a solder-bump technique as the enabling technology so as to provide a parallel configuration of components that has the capability to store electrical energy in the range of 52 kW·h. The total weight of an EESU with this range of electrical energy storage is about 336 pounds.

A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.

Embodiments are directed to strengthened glass articles comprising a thickness t≦1 mm (1000 μm), an inner region under a central tension CT (in MPa), and at least one compressive stress layer adjacent the inner region and extending within the strengthened glass article from a surface of the strengthened glass article to a depth of layer DOL (in μm), wherein the strengthened glass article is under a compressive stress at the surface CSs (in MPa), wherein the strengthened glass article is an alkali aluminosilicate glass article comprising 0-5 mol % Li2O, and at least 3 mol % Al2O3, and wherein the DOL≧70 μm, and a CSs / DOL ratio≧2.5 MPa / μm.

The present invention relates to: novel glass-ceramics of β-quartz and / or of β-spodumene; articles made from said novel glass-ceramics; and ithium alumino-silicate glasses, which are precursors of said novel glass-ceramics; methods of preparing said novel glass-ceramics and articles made from said novel glass-ceramics. The present invention relates to the use of SnO2 and of Br, as an agent for fining the glass-ceramic glass precursor.

Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.

Glasses are disclosed which can be used to produce substrates for flat panel display devices, e.g., active matrix liquid crystal displays (AMLCDs). The glasses have MgO concentrations in the range from 1.0 mole percent to 3.0 mole percent and Σ[RO] / [Al2O3] ratios greater than or equal to 1.00, where [Al2O3] is the mole percent of Al2O3 and Σ[RO] equals the sum of the mole percents of MgO, CaO, SrO, and BaO. These compositional characteristics have been found to improve the melting properties of batch materials used to produce the glass, which, in turn, allows the glasses to be fined (refined) with more environmentally friendly fining agents, e.g., tin as opposed to arsenic and / or antimony.

An optical switch includes a substrate having therein optical waveguides made of silicon and a silicon layer deposited on its top surface. A space is formed in the crossing portion of the optical waveguides which is covered with a lid, preferably made of low alkali borosilicate glass, and which is bonded to the silicon layer by anodic bonding. Preferably, a groove is formed in a surface of the optical waveguide substrate or a bonding surface of the lid. The groove, after the lid has been bonded, makes a passage which communicates between the space and an outside. The passage is a pouring slit for pouring an index-matching liquid and is connected to the space which acts as a driving slit in which the index-matching liquid moves. In one embodiment, the width of the pouring slit is smaller than that of the driving slit. The optical switch can be manufactured by providing an optical waveguide substrate and a lid substrate, one of which is formed with a groove in its surface on which the two substrates are bonded. The optical waveguide substrate and the lid substrate are bonded together by anodic bonding to make a passage which communicates between the space formed in a crossing portion of the optical waveguides and an outside. The regulation of the volume of the index-matching liquid is time-, temperature-, or pressure-based regulation.

A FinFET transistor on SOI device and method of fabrication is provided. At least two FinFET fins each having an upper poly-silicate glass portion and a lower silicon portion are formed using spacer patterning technology. Each fin is formed on a sacrificial SiN mask layer having a sacrificial support structure. The SiN mask is removed and then a breakthrough etch is applied to remove an underlying pad oxide layer. A PSG layer defining a width of each of the fins on a sidewall of each of the support structures is deposited on each of the support structures. At least two fins each having a narrow fin pitch of about 0.25 μm. are formed. The fins provide a seed layer for at least two selective epitaxially raised source and drain regions, wherein each raised source-drain associated with each fin are interconnected thus forming a source pad and a drain pad.

The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.

A method for restoring hydrophobicity to the surfaces of organosilicate glass dielectric films which have been subjected to an etchant or ashing treatment. These films are used as insulating materials in the manufacture of integrated circuits to ensure low and stable dielectric properties in these films. The method deters the formation of stress-induced voids in these films. An organosilicate glass dielectric film is patterned to form vias and trenches by subjecting it to an etchant or ashing reagent in such a way as to remove at least a portion of previously existing carbon containing moieties and reduce hydrophobicity of said organosilicate glass dielectric film. The vias and trenches are thereafter filled with a metal and subjected to an annealing treatment. After the film is subjected to the etchant or ashing reagent, but before being subjected to an annealing treatment, the film is contacted with a toughening agent composition to restore some of the carbon containing moieties and increase the hydrophobicity of the organosilicate glass dielectric film.

Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points≧535° C., for example, ≧570° C., thermal expansion coefficients of from 8 to 9 ppm / ° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Lithium silicate glass ceramics and glasses are described which can advantageously be applied to zirconium oxide ceramics in particular by pressing-on in the viscous state and form a solid bond with these.

The invention discloses a method for producing tempered glass with a plurality of surface stress layers and a tempered glass product and particularly relates to a method for producing tempered lithium glass with a plurality of surface stress layers. The method comprises that a mixed salt bath is used for conducting ion exchange in a step, or various mixed salt baths are used for conducting several ion exchange in a plurality of steps. By the aid of the novel chemical tempered lithium aluminosilicate glass and the treatment method of relative glass products, glass with the plurality of surface stress layers and products of the glass are obtained, and the product serves as a high-strength cover plate in electronic devices, household appliances and vehicles. Compared with the prior art, the tempered glass with the plurality of surface stress layers can protect electronic devices, household appliances and vehicles reliably.

Aluminoborosilicate glasses which may be useful in photovoltaic, photochromic, electrochromic, or Organic Light Emitting Diode (OLED) lighting applications are described.

A thin lithium-aluminosilicate glass is provided. The glass is suitable for three dimensional precision molding and suitable for toughening, wherein after toughening, the glass has a center tension smaller than 50 Mpa, a surface compressive stress of 600-1200 Mpa, and a bending strength of up to 500 MPa. The glass also has a transition point lower than 550° C.

There is provided a semi-transmitting mirror-possessing substrate that has high reflectivity while maintaining high transmissivity, whereby transmission display performance and reflection display performance can both be improved. The semi-transmitting mirror-possessing substrate 1 has a transparent glass substrate 2 made of a soda lime silicate glass, a foundation film 3 made of silicon oxide (SiOx) formed on the glass substrate 2, a semi-transmitting reflective film 4 made of aluminum (Al) formed on the foundation film 3, and a protective film 5 made of silicon dioxide (SiO2) formed on the semi-transmitting reflective film 4. The film thickness of the SiOx used as the foundation film 3 is in a range of 0 to 8 nm. Moreover, the chemical composition ratio x of oxygen (O) to silicon (Si) in the SiOx is in a range of 1.5 to 2.0.

A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and / or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and / or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and / or tertiary amine functionality or combinations.

A neutral-colored soda-lime-silicate glass with high light transmission in the visible region. The glass has a basic composition which contains at least the following constituents: SiO2, 66-75 weight %; Na2O, 10-20 weight %; CaO, 5-15 weight %; MgO, 0-6 weight %; Al2O3, 0-5 weight %; and K2O, 0-5 weight %; and incorporates a colorant portion comprising the following constituents: Co, 0.1-1 ppm; Fe2O3, <=0.03 weight % (total iron content); and FeO / Fe2O3, >0.4. The glass possesses a light transmittance (illuminant D 65 according to DIN 67 507) of at least 89% at a reference thickness of 4 mm.

A removal composition and process for removing silicon-containing layers from a microelectronic device having said layers thereon. The removal composition selectively removes layers including, but not limited to, silicon oxide, plasma enhanced tetraethyl orthosilicate (P-TEOS), borophosphosilicate glass (BPSG), plasma enhanced oxide (PEOX), high density plasma oxide (HDP), phosphosilicate glass (PSG), spin-on-dielectrics (SOD), thermal oxide, updoped silicate glass, sacrificial oxides, silicon-containing organic polymers, silicon-containing hybrid organic / inorganic materials, organosilicate glass (OSG), TEOS, fluorinated silicate glass (FSG), hemispherical grain (HSQ), carbon-doped oxide (CDO) glass, and combinations thereof, relative to lower electrode, device substrate, and / or etch stop layer materials.

The present invention relates to a method of protecting a microelectronic device during device packaging, including the steps of applying a water-insoluble, temporary protective coating to a sensitive area on the device; performing at least one packaging step; and then substantially removing the protective coating, preferably by dry plasma etching. The sensitive area can include a released MEMS element. The microelectronic device can be disposed on a wafer. The protective coating can be a vacuum vapor-deposited parylene polymer, silicon nitride, metal (e.g. aluminum or tungsten), a vapor deposited organic material, cynoacrylate, a carbon film, a self-assembled monolayered material, perfluoropolyether, hexamethyldisilazane, or perfluorodecanoic carboxylic acid, silicon dioxide, silicate glass, or combinations thereof. The present invention also relates to a method of packaging a microelectronic device, including: providing a microelectronic device having a sensitive area; applying a water-insoluble, protective coating to the sensitive area; providing a package; attaching the device to the package; electrically interconnecting the device to the package; and substantially removing the protective coating from the sensitive area.

The invention relates to a high-strength aluminate silicate glass and a chemical toughening method thereof, and belongs to the silicate glass field. The glass comprises the following chemical components (weight percent): 55 to 65 weight percent of SiO2, 0.1 to 3 weight percent of B2O3, 6 to 24 weight percent of Al2O3, 3 to 9 weight percent of MgO plus CaO plus BaO plus SrO, 0 to 1 weight percent of ZrO2, 0 to 2 weight percent of ZnO, 0.1 to 0.5 weight percent of Cl2, 0.1 to 1.0 weight percent of Sb2O3, 0.1 to 0.5 weight percent of SO3 and 0.1 to 0.5 weight percent of F2, and belongs to a aluminate silicate glass system. The high-strength aluminate silicate glass is prepared through a known plate glass production method, and then is subjected to the strengthening treatment by adopting the chemical toughening method. The glass has high permeability of visible light, and relatively common soda lime glass, neutral medicine glass and alkali-free high-aluminum glass have good shock resistance property, high scratch resistance property and high durability. The high-strength aluminate silicate glass is applied to the screen surface protection of plasma display products and liquid crystal display products, the protection of touch screens, the screen protection of automated teller machines, and the screen protection of other electronic products (Mobile phones, PDAs and media machines, etc.), thereby effectively preventing the impact and the scratch damage to the glass surface of display products. The high-strength aluminate silicate glass contains no harmful elements.

A frit composition useful for sealing a light emitting device is disclosed. The frit composition comprises a glass portion comprising a base component and at least one absorbing component. The glass portion of the frit comprises silica, boron oxide, optionally alumina, and (a) cupric oxide and / or a (b) combination of ferric oxide, vanadium pentoxide, and optionally titanium dioxide. Also disclosed is an article comprising a substrate and a frit, and a glass package comprising two substrates and a frit positioned between the substrates. A method for manufacturing a hermetically sealed glass package comprising the deposition of a glass frit and heating of the glass frit to form a hermetic seal is also disclosed.

An antimicrobial, water-insoluble silicate glass powder is provided. The starting glass includes 30 to 70 weight percent SiO2, 0 to 1 weight percent Na2O, 0 to 1 weight percent K2O, 0 to 40 weight percent MgO, 0 to 40 weight percent CaO, 0 to 40 weight percent SrO, 0 to 40 weight percent BaO, 0 to 25 weight percent Al2O3, 0 to 20 weight percent P2O5, 0 to 20 weight percent B2O3, wherein the sum of the alkali oxide contents is less than 1.5 weight percent in the total composition of the starting glass. The starting glass also includes, as biocidally active components, ions or atoms of the elements Ag, Zn, Cu, Ce, Te, or I with total proportions of greater than 2.5 weight percent.