78results about "Silicon hydrides" patented technology

The system comprises a gradient catalytic reaction rectifying tower and a temperature control system, the rectifying tower is sequentially provided with a rectifying section, a reaction section and a stripping section from top to bottom, the reaction section is filled with an ion exchange resin solid catalyst, and the stripping section is filled with an ion exchange resin solid catalyst. The radiuses of the catalyst bag units are distributed in a gradient mode from small to large along the height of the tower, the catalyst bag units have the functions of catalytic reaction and mass transfer separation, the rectifying section and the stripping section are filled with structured packing or high-separation-capacity metal wire mesh packing, a gas-liquid separator is arranged at an outlet of the stripping section, and a temperature control system achieves segmented monitoring through a multi-point temperature sensor. The surface of the catalyst can be subjected to functional treatment to improve the decomposition resistance; the method comprises the following steps: feeding trichlorosilane generated by cold hydrogenation into the upper part of a reaction section from a feed port, carrying out disproportionation reaction at the gradient temperature of 20-100 DEG C and the pressure of 0.3-0.6 MPa according to the reflux ratio of (15-30): 1 to generate silane, and carrying out rectification and extraction separation to obtain high-purity silane with the purity of 99.999% or above.

The electronic-grade silane gas continuous production preparation system comprises a cold hydrogenation treatment device, an inlet of the cold hydrogenation treatment device is connected with a raw material supply system, and an outlet of the cold hydrogenation treatment device is connected with a cold hydrogenation rectifying tower through a pipeline. The cold hydrogenation rectifying tower is sequentially connected with the boron and phosphorus removal adsorption column, the first-stage disproportionator, the first tower, the second tower, the second-stage disproportionator, the third tower and the fourth tower through pipelines, and electronic-grade silane in the fourth tower is used for being conveyed to a silane tank area; the first tower is used for removing silicon tetrachloride produced after the disproportionation reaction of the first-stage disproportionator; the second tower is used for separating the extracted chlorosilane material; the third tower is used for separating silane from chlorosilane; and the fourth tower is used for discharging light impurities and heavy impurities and conveying gas-phase electronic-grade silane into a silane tank area. The device and the method realize continuous, efficient and high-purity production of the electronic-grade silane gas, and have the advantages of low energy consumption, low cost, thorough impurity removal and the like.

The application discloses a process and equipment for producing silane by chlorosilane disproportionation with combined solid catalyst and liquid catalyst, and the process at least comprises a reaction rectification stage catalyzed by a solid catalyst and a reaction and separation stage catalyzed by a liquid catalyst. The process of the application uses the solid catalyst and the liquid catalyst simultaneously, and combines the homogeneous catalytic reaction rectification and the heterogeneous catalytic reaction rectification, so that the rate-controlling step of the disproportionation reaction is first balanced through primary disproportionation, then the generated intermediate product is subjected to secondary disproportionation, and the silane and the silicon tetrachloride are continuously removed, so that the chemical equilibrium is further transferred to the product site, that is, the limited reaction conversion of the very high or all chemical equilibrium is achieved. The chlorosilane disproportionation reaction which is not favorable to the reaction kinetics is strengthened, the reaction is promoted to reach the equilibrium, and the multiple disproportionation is used to improve the reaction conversion rate.

The utility model provides an impurity removal system for preparing disproportionation reaction silane gas, which comprises a dehydrogenation tower (1) for preparing silane, and further comprises a side production pipeline (5) arranged in the middle of the side of the dehydrogenation tower (1), the other end of the side production pipeline (5) is in fluid connection with a circulating water condenser (6), and the other end of the circulating water condenser (6) is in fluid connection with the dehydrogenation tower (1). A liquid phase outlet of the circulating water condenser (6) is in fluid connection with a buffer tank (7), and the buffer tank (7) is in fluid connection with a silane reaction tower (9) through a pump (8). According to the device, the content of heavy phosphorus impurities in silane gas can be reduced, and the quality of the product silane gas is improved; the dehydrogenation tower is transformed to reduce the influence of phosphorus impurities on the activity of the catalyst in the reaction tower.

The utility model relates to the technical field of chemical equipment, and discloses a disilane preparation device, which comprises a mounting plate, the supporting block is arranged on the mounting plate; the clamping sleeve is fixedly arranged above the supporting block; the reaction kettle is fixedly arranged in the jacket; the feeding hole is formed in the reaction kettle, and a feeding pipe is fixedly arranged in the feeding hole; the outlet is formed in the reaction kettle and is formed in one side of the feeding hole, and a discharging pipe is fixedly connected to the outlet; the gas inlet hole is formed in the reaction kettle, and the output end of a gas compressor is fixedly connected to the interior of the gas inlet hole; the stirring mechanism is arranged in the reaction kettle; the slag discharge pipe is communicated with the jacket and the reaction kettle, and the slag discharge pipe is arranged at the bottom of the reaction kettle; the rectifying tower is communicated with the discharging pipe, the top of the rectifying tower is connected with a condenser, the bottom of the rectifying tower is connected with a reboiler, and the rectifying tower is communicated with a storage tank. The disilane preparation device disclosed by the utility model is used for solving the problems of the existing equipment.

The utility model discloses a device for one-way preparation of electronic grade silane gas in a particle silicon process, the device comprises a preheater, a light component removal unit, a silane reaction unit, a condensation unit, a separation unit and a gasification purification unit which are connected in sequence, and the silane reaction unit comprises more than two silane reaction towers which are arranged in parallel. According to the utility model, more than two silane reaction towers are arranged in the silane reaction unit in parallel, so that trichlorosilane is converted into silane at one time after being sequentially subjected to the steps of preheating, light component removal, reactive distillation, condensation heat exchange, separation and gasification purification; the conversion per pass can be improved, the material condensation and reboiling processes are reduced, the energy consumption is reduced, and the production process cost is reduced.

The invention discloses a high-purity disilane production system and a high-purity disilane production method. The system comprises a reactor (100), a primary gas-solid separator (200), supercharging equipment (300), a secondary gas-solid separator (400), a gas separation membrane assembly (500), a light component removal tower (600) and a product tower (700) which are sequentially connected through pipelines. The core of the invention lies in that a two-stage gas-solid separation structure is adopted to effectively solve the contradiction between the low-pressure operation of the reactor and the high-pressure feeding of the membrane module, and core equipment is fully protected; meanwhile, a mixed matrix molecular sieve membrane is arranged in the gas separation membrane assembly, and screening of hydrogen and monosilane molecules can be efficiently achieved, so that the reaction byproduct hydrogen is removed through a one-step method. According to the method, monosilane is taken as a raw material, after reaction synthesis, primary dust removal, pressurization, fine dust removal, membrane-method dehydrogenation and rectification separation are sequentially carried out on a product, a high-purity disilane product is finally obtained, and unreacted monosilane is returned to a system for cyclic utilization.

Disclosed are Group V element-containing precursors, methods for their synthesis, and methods for their use in film deposition. The precursor is (SiR3) 3-m A(Si a H 2a+1 ) m , (SiR3) 3-n-p A(Si a H 2a+1 ) n (Si b H 2b+1 ) p , or A(Si a H 2a+1 )(Si b H 2b+1 )(Si c H 2c+1 ) (wherein a=1-6; b=1-6; c=1-6; a≠b≠c; m=1-3; n=1-2, p=1-2, n+p=2-3; A=As, P, Sb, Bi; R is C1-C 10 (A is selected from linear, branched, or cyclic alkyl, alkenyl, alkynyl groups of A). Synthesis methods include one-step, two-step, or three-step reaction between halo(poly)silanes and tris(trialkylsilyl) derivatives of A, or one-pot mixture reaction of two or three halo(poly)silanes with a mixture of tris(trialkylsilyl) derivatives of A. Deposition methods include CVD, PECVD, ALD, PEALD, flowable CVD, HW-CVD, epitaxy, etc.

The invention relates to the field of silane gas synthesis, in particular to a synthesis method for co-production of disilane and trisilane. The specific operation is as follows: monosilane is introduced into a metal pipeline reactor filled with a catalyst, a catalytic reaction is performed at the temperature of 450-550 DEG C and the pressure of 0.1-2 MPa to prepare a mixture of crude disilane and monosilane, and then the mixture enters an adsorption tower to collect disilane and trisilane with the purity greater than 99%. According to the method, the metal pipeline is used as a reactor, silane is pyrolyzed into SiH3 free radicals and H free radicals by regulating and controlling the temperature and ensuring the pressure and catalyst conditions, and the SiH3 free radicals and the H free radicals are mutually combined to form disilane and trisilane, so that the selectivity of the product is remarkably improved, and the purity of the collected product reaches 99% or above.

The present invention discloses a process for recovering hydrogen and silane from HJT solar cell production waste gas, which belongs to the field of waste gas treatment technology and includes the following steps: the waste gas is sequentially input into a combined adsorption tower through a vacuum pump and a blower to remove the silane or phosphine components in the waste gas; the gas after adsorption is sent to a deep cold box to liquefy the silane or phosphine that has not been completely removed and the nitrogen in the mixed gas; and is transported to a gas-liquid separator, which separates hydrogen + a small amount of nitrogen. The high nitrogen liquid after separation refluxes in a heat exchanger and performs heat exchange with the waste gas flowing in. The refluxed high nitrogen liquid is vaporized and transported to a combined adsorption tower; step five, hydrogen purification and recovery. The present invention realizes the recovery of hydrogen and silane gas from the waste gas discharged from the production of HJT solar cells by rationally designing the process of waste gas treatment and proposing a new molecular sieve configuration, and reuses them after purification.

Process for the preparation of halogenated oligosilanes Si n X 2n+2 with n = 2 to n = 6 as a pure compound or mixture of compounds whose substituents comprise chlorine or chlorine and hydrogen, characterized in that (a) the starting materials for the process comprise elemental silicon, SiCl4 and elemental hydrogen in at least a catalytic amount, b) the HCl gas produced in the process is recycled to more than 5%, preferably more than 20%, particularly preferably more than 50%, in particular more than 80%, into the process, c) the process comprises a reaction of elemental silicon with HCl as catalyst to form chlorinated oligosilanes, the reaction being carried out by a two-stage catalytic reaction step, d) the process comprises a plasma-chemical synthesis step which is operated in a pressure range of 0.1 hPa to 100 hPa, preferably 0.5 hPa to 30 hPa, particularly preferably 1 hPa to 10 hPa, in particular 1.5 hPa to 5 hPa, e) at least one further silane is used as starting material and / or intermediate, selected from the group of hydrogenated silanes, which includes HSiCl3, HSi2Cl5 and H2SiCl2, f) the reactants or the reactant mixture of the plasma-chemical synthesis step contain less than 1 atom% of C as such or in the form of its compounds and g) the process comprises at least one further step selected from a group comprising distillation, chlorination and thermolysis.

The utility model provides a monosilane buffer filling device which comprises a condenser (7) used for converting gaseous monosilane into liquid monosilane, the input end of the condenser (7) is the input end of the device, and the outlet of the condenser (7) is in fluid connection with a hollow monosilane buffer tank (3) used for storing monosilane. The monosilane buffer tank (3) is in fluid connection with the vaporizer (4) and used for converting liquid monosilane in the monosilane buffer tank (3) into a gas state, and the monosilane buffer tank (3) is provided with a gas state outlet, namely the output end of the device.

The invention relates to the technical field of silicon material preparation and semiconductor process, and discloses a high-purity silicon preparation and monocrystalline silicon growth integrated process based on a silane decomposition method, which comprises the following steps: carrying out silane synthesis in a silicon carbide-lined fluidized bed reactor, separating a reaction product by a cyclone separator at the top of the reactor, and drying the reaction product; industrial silicon powder and high-purity hydrogen react under set conditions to generate silane gas, the synthesized silane gas is introduced into a three-section type vertical pyrolyzing furnace and sequentially passes through a preheating zone, a main reaction zone and a cooling zone, silane is gradually decomposed in the preheating zone and the main reaction zone to generate high-purity silicon powder, undecomposed gas is recycled after being condensed and adsorbed, and the high-purity silicon powder is obtained. High-purity silicon powder is molten in a molten silicon liquid tank, molten silicon liquid is formed through electromagnetic induction heating, the molten silicon liquid is drawn into monocrystalline silicon through a continuous straight-pulling single crystal furnace, and the growth diameter of crystals is controlled in real time through a laser range finder, so that efficient preparation of high-purity silicon and monocrystalline silicon is achieved, and the production requirement of semiconductor-grade monocrystalline silicon is met.

The invention relates to a method and a device for gas-phase continuous preparation of disilane. The method comprises the following steps: S1, gas phase catalytic reaction-hydrogen separation integration: introducing a silane raw material into a tubular reactor filled with a palladium separation membrane, and carrying out a gas phase dehydrogenation condensation reaction under the action of the palladium separation membrane to obtain a component I and a component II; and S2, separation of silane, disilane and trisilane: carrying out three-stage separation on the component II to obtain disilane. The device comprises a catalytic reaction-separation integrated fixed bed device, a first distillation tower, a second distillation tower and a third distillation tower which are arranged along the material flow direction. The palladium separation membrane has the characteristics of catalytic activity and hydrogen separation function, the single-pass yield and selectivity of disilane are improved, generation of trisilane and deposition of silicon powder are inhibited, meanwhile, efficient utilization of raw materials is achieved, the reaction time is short, and no liquid or gas waste is generated in the whole process.

To provide a method for producing higher silanes that has high selectivity for disilanes even when a lower silane and a catalyst are reacted for a long time.　The present invention includes a method for producing higher silanes in which a porous oxide and a lower silane are brought into contact to convert the lower silane into a higher silane having more silicon atoms, wherein the higher silanes include disilanes, the estimated reaction time is from more than 200 hours to 10,000 hours, the temperature at which the porous oxide and lower silane are brought into contact is 100-400°C, and the retention time represented by formula (1) is from 5 seconds to less than 80 seconds.　Retention time [sec] = amount of porous oxide [L] × ((pressure [MPaG] + 0.101325) / 0.101325) × (273.15 / (temperature [°C] + 273.15)) × (3600 / amount of gas supplied [NL / h]) … (1) (In formula (1), the amount of porous oxide represents the amount of porous oxide brought into contact with the lower silane, the pressure and temperature each represent the pressure and temperature at which the porous oxide and lower silane are brought into contact, and the amount of gas supplied is the amount of raw material gas containing the lower silane supplied per unit time during contact with the porous oxide.)

The utility model relates to the technical field of silane impurity removal, and provides a silane impurity removal system for removing impurities from crude silane gas containing impurity ammonia, which is used for purifying the crude silane gas containing the impurity ammonia, so that the operation cycle of the system is favorably improved, and the blocking risk is reduced. The system comprises a rectifying tower, a rectifying condenser, a rectifying condensing tank and a solidification separator, the rectifying tower is connected with the crude product gas conveying pipeline, so that ammonia in the silane crude product gas is rectified and separated, and rectified silane gas is obtained; an inlet of the rectification condenser is connected with the tower top gas outlet of the rectification tower through a pipeline; an inlet of the rectification condensation tank is connected with an outlet of the rectification condenser through a pipeline so as to perform condensation treatment on the silane gas treated by the rectification condenser and obtain ammonia condensate and a silane-containing gas phase; and the solidification separator is used for continuously carrying out condensation treatment on the silane-containing gas phase output from the rectification condensation tank to obtain liquid silane and ammonia crystal substances.

The utility model discloses a production device for improving the purity of silane, which comprises a first heat exchanger which is sequentially connected with a primary purification component and a secondary purification component through a pipeline, the primary purification assembly comprises a first resin column used for carrying out liquid phase adsorption on liquid silane and a first rectifying tower used for carrying out rectification separation on the silane, and the secondary purification assembly comprises a second resin column used for carrying out gas phase adsorption on silane gas and a second rectifying tower used for carrying out rectification separation on the silane. According to the utility model, two purification operations of resin complexing adsorption and rectification are combined for the first time, and the permutation and combination of rectification and complexing adsorption are optimized again, so that the purpose of removing impurities is achieved. According to the process, the removal and rectification load of trace impurities by single rectification operation is greatly reduced, and the rectification pressure and energy consumption can be effectively reduced.

The invention discloses a preparation method of high-purity silane suitable for a small experimental device, which comprises the following steps: sequentially connecting and arranging a main reactor, a second reactor, a condenser, a silane buffer tank, a booster pump and a silane steel cylinder, and injecting hydrogen, nitrogen and silicon tetrafluoride materials into the main reactor after passing through the same mass flow controller; then the material enters a second reactor through a gas phase outlet pipeline at the top of the main reactor, a gas phase outlet at the top of the second reactor is connected with an inlet at the bottom of a condenser, an outlet of the condenser is connected with a silane buffer tank, and an outlet pipeline is arranged at the top of the silane buffer tank; materials enter the booster pump through the outlet pipeline, are pressurized in the booster pump and then are fed into the silane steel cylinder to be stored, so that the complexity of the reaction device is simplified, the energy consumption is reduced, and the problems of huge device size, complex process conditions and the like are solved.

The utility model relates to the technical field of silane production, in particular to an electronic-grade silane system device which comprises a partition plate tower, the partition plate tower is communicated with a purification furnace through a first pipeline, the purification furnace is connected with a rectifying tower through a second pipeline, and a filter is arranged on the second pipeline. Process gas prepared by a silicon-magnesium method reaction kettle is conveyed to the middle of a partition plate tower, light component impurities such as H2 and N2 are removed at the top of the partition plate tower, and after non-metal hydride and high-order silane components such as silane and disilane are removed at the bottom of the tower, crude silane is extracted from the tower side and is introduced into a purification furnace through a first pipeline, and by means of the property that the thermal stability of the silane and the hydride impurities is different, the high-order silane is obtained. And adjusting the temperature of the purification furnace to a proper temperature, carrying out thermal decomposition on hydride impurities, filtering a silane gas phase obtained in the purification furnace through a filter on a second pipeline, introducing the filtered silane gas phase into a rectifying tower for refining, and finally extracting a liquid phase, thereby obtaining the high-purity electronic-grade silane.

The utility model provides a preparation device of electronic-grade silane. According to the preparation device, a first disproportionation reaction is carried out on the basis of the first reactor, dichlorosilane is rectified and separated to serve as a raw material for a second disproportionation reaction, silane can be obtained on the basis of cheap trichlorosilane and a catalytic reagent, and electronic-grade silane can be obtained on the basis of traditional purification after rectification; based on heat exchange between tower top materials of the rectifying tower I and a tower kettle reboiler of the rectifying tower II, differential pressure thermal coupling integration is realized, condensing equipment and operation steps can be omitted, energy consumption is reduced, and the defects of high preparation cost and high energy consumption of a silane preparation device in the prior art are overcome.

This invention discloses a single-atom catalyst for the disproportionation of SiHCl3 to SiH4 and its preparation method. The catalyst uses a transition metal as the active center, with single atoms dispersed on a high-temperature resistant support. High metal loading (0.5~5 wt%) and stable dispersion are achieved through coordination anchoring or high-temperature pyrolysis. This catalyst possesses single-atom active sites and strong interactions between the metal and the support, improving reactivity and SiH4 selectivity. The preparation method employs scalable technology, ensuring uniform distribution and stability of single atoms by optimizing the precursor ratio and heat treatment conditions. This catalyst achieves high SiHCl3 conversion and high SiH4 selectivity at relatively low temperatures (150~300℃), and has a long lifespan, making it suitable for continuous industrial production. It offers advantages such as high efficiency, low energy consumption, and long-term operation.

The invention discloses a preparation method of an adsorbent for producing high-purity silane and the adsorbent. The method comprises the following steps: step 1, carrying out oxidation treatment on activated carbon; 2, uniformly mixing the sample obtained in the step 1 with a copper salt precursor; 3, calcining the sample obtained in the step 2 in an inert atmosphere to obtain a CuO / AC inner core; step 4, dispersing the CuO / AC inner core into the sodium aluminosilicate sol, and then adding a template agent to carry out hydrothermal reaction, so that sodium aluminosilicate is crystallized to obtain an adsorbent precursor; and step 5, roasting the adsorbent precursor to obtain the adsorbent. The adsorbent is provided with a CuO / AC inner core and a molecular sieve shell, when impurities are adsorbed, the molecular sieve shell preliminarily adsorbs borane and phosphorane in silane, and deep purification is achieved through Cu ions in the CuO / AC inner core; meanwhile, the high conductivity of the activated carbon promotes electron transfer, and the reaction between Cu ions and phosphorane / borane is accelerated.

The invention discloses a silane purification process which comprises the following steps: under the conditions of 250-350 DEG C and illumination, methane of silane containing methane impurities is cracked into solid carbon and hydrogen under the action of a photo-thermal catalyst reduced by hydrogen; the photo-thermal catalyst is a core-shell bifunctional catalyst and / or a core-shell-photosensitive three-functional catalyst; the core-shell bifunctional catalyst comprises a nickel core and a mesoporous silica shell wrapping the nickel core; the core-shell-photosensitive three-function catalyst comprises a nickel core, a mesoporous silica shell wrapping the nickel core and a CeO2 photosensitive layer distributed on the outer surface of the mesoporous silica shell in a nano island structure; in the photo-thermal catalyst, the pore diameter of the mesoporous silica shell is 2.3-2.7 nm.

The invention discloses a system for purifying impurity gas in a disilane product synthesized from silane. The system comprises a membrane separation device, a fan, a first rectifying tower and a second rectifying tower which are communicated in sequence, the invention further relates to a process for purifying the impurity gas in the product of synthesizing the disilane from the silane, high-content hydrogen and other light components in the product gas of synthesizing the disilane from the silane are primarily separated from the silane, the disilane and the trisilane by adopting a membrane separation mode, then rectification separation is carried out, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, the purity of the recovered disilane is up to 99.995% or above, and the purity of the recovered disilane is up to 99.995% or above. The process is efficient, simple and low in energy consumption.

The application provides a silane gas production system and method based on double reaction distillation columns. The system comprises a second reaction distillation column (2) arranged in the silane gas production system, a middle input end of the second reaction distillation column (2) is connected with a bottom output end of a silane distillation column (3) in the silane gas production system, receives an intermediate mixture output from the silane distillation column (3) and performs a disproportionation reaction; a top output end of the second reaction distillation column (2) is connected with a top output end of a first reaction distillation column (1) in the silane gas production system, and the mixture in the second reaction distillation column (2) is subjected to subsequent treatment; and a bottom output end of the second reaction distillation column (2) is connected with a middle input end of the first reaction distillation column (1) in the silane gas production system, and the output from the first reaction distillation column (1) is subjected to a disproportionation reaction. The method is realized by using the system to produce silane gas based on double reaction distillation columns.

The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.

The invention discloses a production method for preparing monosilane gas by using chlorosilane, and belongs to the technical field of monosilane preparation, which comprises the following steps: preheating chlorosilane, and removing light component impurities; cooling the first tower kettle produced liquid subjected to impurity removal, and then carrying out secondary impurity removal; the material subjected to secondary impurity removal is subjected to a first reaction and a second reaction after passing through a second preheater, is subjected to first condensation after the first reaction and then flows back to the reaction tower, is subjected to second condensation after the second reaction and then flows back to the reaction tower, and the reacted material is discharged from the top of the reaction tower, is subjected to second cooling and then partially flows back; the other part enters a chlorosilane rectifying tower; a tower top produced liquid part of the reaction tower is subjected to rectification separation, a tower top produced liquid of the chlorosilane rectifying tower is subjected to secondary rectification, monosilane containing light component impurities is discharged through the tower top of the product rectifying tower, a monosilane product is produced through the side part of the product rectifying tower, and a tower kettle produced liquid of the product rectifying tower is discharged. According to the method, chlorosilane is utilized, and monosilane is prepared after simple treatment.

The invention discloses a silane separation process, and relates to the technical field of chemical processing. Comprising the following steps: introducing a mixture to be separated into a condenser; collecting the high boiling point condensate in a condensate buffer; condensate rich in high-boiling-point chlorosilane in the condensate buffer is fed into a subcooler; the monosilane containing the low-boiling-point chlorosilane is distilled to separate the monosilane; extracting gas rich in silane from the upper part of the chlorosilane absorption tower; extracting pure monosilane gas from a distillation column downstream of the chlorosilane absorber; and extracting the chlorosilane condensate at the bottom of the chlorosilane absorption tower and recycling the chlorosilane condensate. Due to the fact that the liquid-phase condensate can be supercooled by the liquid-phase refrigerant, the phenomenon of heat transfer inhibition cannot occur, compared with the prior art, the size of the heat exchanger is smaller, the production and purchase cost is saved, meanwhile, the reflux condenser with the absorber is used for replacing a traditional condenser, refrigeration power consumption is reduced by 10%-60%, and the environment-friendly development concept is met.

The invention discloses a monatomic catalyst for preparing SiH4 by disproportionating SiHCl3 and a preparation method of the monatomic catalyst. According to the catalyst, transition metal serves as an active center, single atoms are dispersed on a high-temperature-resistant carrier, and high loading capacity (0.5-5 wt%) and stable dispersion of the metal are achieved through a coordination anchoring method or a high-temperature pyrolysis method. The catalyst has monatomic active sites, strong interaction between metal and a carrier is achieved, and reaction activity and SiH4 selectivity are improved. According to the preparation method, a large-scale technology is adopted, and uniform distribution and stability of monatomic are ensured by optimizing the proportion of a precursor and heat treatment conditions. The catalyst can realize high SiHCl3 conversion rate and high SiH4 selectivity at a low temperature (150-300 DEG C), has a long service life, is suitable for industrial continuous production, and has the advantages of high efficiency, low energy consumption and long-period operation.

The invention discloses a process and system for producing electronic-grade silane through thermal coupling reactive distillation, and relates to the technical field of electronic-grade silane generation, and the system mainly comprises a reactive distillation tower, a compression system, a silane crude distillation tower, a silane refining tower, a silane adsorption tower, a solvent recovery tower, a tail gas treatment system and a filtering and drying system. According to the technology, silicon tetrafluoride gas and a sodium aluminum hydride solution are introduced into a reactive distillation tower for a reverse contact reaction, generated crude silane gas is subjected to compression, multi-stage distillation and adsorption purification, and finally 9N-12N electronic-grade silane is obtained. A stirring kettle is replaced by reactive distillation, so that the risk of dynamic seal leakage is thoroughly eliminated; by adopting a multi-stage thermal coupling technology, reaction heat, tower bottoms and compression heat are used for heating the system, so that the energy consumption is obviously reduced; the method realizes cyclic utilization of the solvent and fluorine resources, and has the advantages of high safety, high product purity, low energy consumption and comprehensive utilization of resources.