318results about "Silicon hydrides" patented technology

A porous organosilicate glass (OSG) film: Si_vO_wC_xH_yF_z, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH₃) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

A process and apparatus for the decontamination of gaseous contaminants (especially oxygen, carbon dioxide and water vapor) from hydride gases (including their lower alkyl analogs) down to <=100 ppb contaminant concentration are described. The critical component is a high surface area metal oxide substrate with reduced metal active sites, which in various physical forms is capable of decontaminating such gases to <=100 ppb, <=50 ppb or <=10 ppb level without being detrimentally affected by the hydride gases. The surface area of the substrate will be >=100 m2/g, and preferably 200-800 m2/g. Oxides of various metals, especially manganese or molybdenum, can be used, and mixtures of integrated oxides, or one type of oxide coated on another, may be used. The substrate is preferably retained in a hydride-gas-resistant container which is installed in a gas supply line, such as to a gas- or vapor-deposition manufacturing unit. The invention provides final decontamination for hydride gas streams intended for gas- or vapor-deposition formation of high purity LED, laser (especially blue laser), electronic, optical or similar products, and can be used in combination with upstream preliminary decontamination process and/or upstream or downstream solid particulate removal units.

The silicon tetrachloride hydrogenating process of producing trichloro-hydrosilicon includes: mixing powdered nickel catalyst and silicon powder in the mass ratio of 1-10 and activating the mixture in hydrogen atmosphere and at the temperature of continuously change from 20 deg.C to 420 deg.c; and making mixed gas of hydrogen and SiCl4 in the molar ratio of 1-10 pass through the activated catalyst and silicon powder layer for hydrogenating SiCl4 continuously at 400-500 deg.c temperature and 1.2-1.5 MPa pressure. The equipment, system and operation of the present invention has high once SiCl4 converting rate and low power consumption and may be used in large-scale production.

A negative-electrode active material for nonaqueous electrolyte secondary battery, comprising a silicon compound capable of inserting and extracting lithium ion, wherein the silicon compound contains silicon-hydrogen bonds and the silicon-hydrogen bonds are introduced into the compound by reduction of at least one compound selected from the group consisting of silicon oxide, silicon nitride and silicon carbide with hydrogen, and a negative electrode for nonaqueous electrolyte secondary battery having a layer containing the negative-electrode active material in the above arrangement formed on a current collector.

Purification material for removing a contaminant from an impure hydride gas comprising an adsorbent comprising a reduced metal oxide on a porous support and a desiccant. The porous support may be selected from the group consisting of activated carbon, alumina, silica, zeolite, silica alumina, titania, zirconia, and combinations thereof. The reduced metal oxide may comprise one or more metals selected from the group consisting of Group I alkali metals (lithium, sodium, potassium, rubidium, and cesium), Group II alkaline earth metals (magnesium, calcium, strontium, and barium), and transition metals (manganese, nickel, zinc, iron, molybdenum, tungsten, titanium, vanadium, cobalt, and rhodium). The desiccant may be selected from the group consisting of hygroscopic metal salts, zeolites, single metal oxides, mixed metal oxides, and combinations thereof.

There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.

The invention provides adducts comprising a carbon nanotube with covalently attached silane moieties, and methods of making such adducts. Examples of silane moieties include trimethoxysilane; hexaphenyldisilane; silylphosphine; 1,1,1,3,5,5,5-heptamethyltrisiloxane; polydimethylsiloxane, poly(N-bromobenzene-1,3-disulfonamide); N,N,N′,N′-tetrabromobenzene-1,3-disulfonamide; hexamethyldisilazane (HMDS); chlorotrimethylsilane (TMCS); trichloromethylsilane (TCMS); an alkyl(alkylamino)silane; a tri(alkoxy)silane; tert-butyldimethylsilane; monochloroaminosilane; dichloroaminosilane; trichloroaminosilane; and dimethylaminosilane.

A process for the production of monosilanes from the high-boiling residue resulting from the reaction of hydrogen chloride with silicon metalloid in a process typically referred to as the "direct process." The process comprises contacting a high-boiling residue resulting from the reaction of hydrogen chloride and silicon metalloid, with hydrogen gas in the presence of a catalytic amount of aluminum trichloride effective in promoting conversion of the high-boiling residue to monosilanes. The present process results in conversion of the high-boiling residue to monosilanes. At least a portion of the aluminum trichloride catalyst required for conduct of the process may be formed in situ during conduct of the direct process and isolation of the high-boiling residue.

Silane is produced in a continuous process by disproportionating trichlorsilane in at least 2 recreation areas for reaction/distillation, which are run through by a countercurrent of steam and liquid in the presence of catalytically active solid under a pressure which ranges between 500 mbar and 50 bar.

The invention discloses a production method of silane. The production method comprises the following steps of: heating trichlorosilane to 70-90 DEG C by using a preheater; feeding heated trichlorosilane into a first reaction region of a reaction rectifying tower, and performing a first step catalytic disproportionation reaction of trichlorosilane in the first reaction region to generate dichlorosilane and silicon tetrachloride; feeding silicon tetrachloride generated in the first reaction region into the stripping section of the reaction rectifying tower, separating, purifying and discharging from a tower kettle; raising dichlorosilane generated in the first reaction region to a second reaction region of the reaction rectifying tower, and performing a second step catalytic disproportionation reaction to generate trichlorosilane and silane; refluxing the trichlorosilane generated in the second reaction region into the first reaction region, mixing with trichlorosilane heated by using the preheater, and continually performing the first step catalytic disproportionation reaction; and raising silane generated in the second reaction region into the rectifying section of the reaction rectifying tower, separating, purifying and discharging from the tower top of the reaction rectifying tower to obtain silane.

A process for the preparation of high purity silane, suitable for forming thin layer silicon structures in various semiconductor devices and high purity poly- and single crystal silicon for a variety of applications, is provided. Synthesis of high-purity silane starts with a temperature assisted reaction of metallurgical silicon with alcohol in the presence of a catalyst. Alcoxysilanes formed in the silicon-alcohol reaction are separated from other products and purified. Simultaneous reduction and oxidation of alcoxysilanes produces gaseous silane and liquid secondary products, including, active part of a catalyst, tetra-alcoxysilanes, and impurity compounds having silicon-hydrogen bonds. Silane is purified by an impurity adsorption technique. Unreacted alcohol is extracted and returned to the reaction with silicon. Concentrated mixture of alcoxysilanes undergoes simultaneous oxidation and reduction in the presence of a catalyst at the temperature -20 DEG C. to +40 DEG C. during 1 to 50 hours. Tetra-alcoxysilane extracted from liquid products of simultaneous oxidation and reduction reaction is directed to a complete hydrolysis. Complete hydrolysis of tetra-alcoxysilane results in formation of industrial silica sol and alcohol. Alcohol is dehydrated by tetra-alcoxysilane and returned to the reaction with silicon.

A method and apparatus for generating energy from a composition containing guanidine and a method for providing the composition containing guanidine. The apparatus includes a container such as tank (1) for providing the composition, and a container such as tank (2) for providing water. The composition is delivered from tank (1) to a container such as reactor (3) for reacting the guadinine composition with water, supplied from tank (2), to form ammonia. The apparatus may also include buffer tank (4) for storing the ammonia produced by the reactor. The ammonia produced from the reactor of the guadinine composition with water is delivered from the buffer tank (4) to a container such as chamber (5) for oxidizing ammonia to form water and nitrogen generating energy

Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.

The invention relates to a device and a method for preparing high-purity silane through disproportionation reactive distillation of trichlorosilane. The method comprises a disproportionation reactive distillation process (A), a silicon tetrachloride absorption process (B), a fixed bed absorption process (C) and a product filling process (D). The method comprises the steps that: two-step disproportionation reaction is adopted, and the distillation separation action of a reactive distillation column is utilized to finally obtain a mixed gas of silane and dichlorosilane on a column top to be used as non-condensable gas of a condenser to be extracted, and a silicon tetrachloride product is obtained at a column bottom after reaction formation; a gaseous product which is recovered through a disproportionation reactive distillation column enters into a silicon tetrachloride absorption column, wherein the main ingredient of an absorbed gas is silane, an absorption liquid is filled into a silicon tetrachloride desorption column, the desorbed dichlorosilane is recovered on the column top, and the desorption liquid of the column reflows back to the silicon tetrachloride absorption tower; the absorbed gas is filled into a fixed bed to absorb so as to obtain a high-purity silane product; and the silane product is filled into a buffer tank under the pressurization condition. Technological equipment is simple, and the obtained silane product has high purity.

An apparatus is provided for synthesis and collection of higher order chemical compounds from lower order precursors. The apparatus includes a first silent electric discharge reactor configured to synthesize an intermediate product (e.g., disilane) from a precursor chemical (e.g., monosilane). A second silent electric discharge reactor is connected downstream of the first reactor. This second reactor is configured to convert the intermediate product into the higher order chemical compound (e.g., trisilane). Multiple condensation traps are also connected to receive effluent from the second reactor, which will generally include the compound of interest as well as unreacted precursor and intermediate product. In the illustrated embodiment, a parallel second condensation traps is also included to shunt flow and continue collection while the chemical of interest is removed for purification. Moreover, parallel second condensation traps for the intermediate product and unreacted (or recombined) precursor allow continued collection while the contents of the first traps are recycled in the reactor(s).

The invention provides a catalyst used in preparation of silane by disproportionation, a preparation method for the catalyst and a process for preparing SiH4 by disproportionating SiH2C12. The catalyst is used for preparing higher hydrogen-containing halogeno silane and silane by disproportionating halogeno silane. The catalyst is M/acid cation exchange resin, wherein M may be one or more of Ru, Rh, Fe, Co, Ni, Pd, Cd, Cu, Zn, Ag, Pt and Au. The catalyst has higher activity and high-temperature resistance during preparation of silane, and particularly has the maximum service temperature up to 150 DEG C in large-scale production, thereby improving disproportionation temperature and contributing to improving primary conversion efficiency of the reaction. A carrier has no adsorbability to a silane product, thereby contributing to catalyst stability and yield improvement. In addition, the preparation method is simple, easy, and highly stable.

The invention relates to the technical field of preparation and purification of silane, in particular to a method for preparing silane by disproportionating dichlorosilane. The method comprises the following steps of: putting chlorosilane of which the main component is the dichlorosilane into a disproportionation reaction tower; and feeding a reaction product into a catalytic reaction and then fed into section rectification column for separating to obtain silane gas at the temperature of 30 to 100 DEG C, wherein macroporous anion exchange resins and organic amine composite catalyst are filled in the catalytic reaction section. By the method, the conversion rate of the dichlorosilane is greatly improved and up to over 25 percent; and a by-product, namely the dichlorosilane produced during polysilicon production is converted to the silane, so that the utilization rate of raw materials is increased, emission of waste water, waste residues and waste gas is reduced, and economic benefits and social benefits are improved during polysilicon production.